A novel process for the fabrication of Long Range Surface Plasmon Polariton (LRSPP) waveguide based biosensors is presented herein. The structure of the biosensor is comprised of Au stripe waveguide devices embedded in thick CYTOP claddings with a SiO2 solvent diffusion barrier and etch-stop layer. The SiO2 layer is introduced to improve the end quality of Au waveguide structures, which previously deformed during the deposit of the upper cladding process and to limit the over-etching of CYTOP to create micro-fluidic channels. The E-beam evaporation method is adapted to deposit a thin SiO2 on the bottom cladding of CYTOP. A new micro-fluidic design pattern is introduced. Micro-fluidic channels were created on selective Au waveguides through O2 plasma etching. The presented data and figures are refractive index measurements of different materials, thickness measurements, microscope images, and AFM images. Optical power cutback measurements were performed on fully CYTOP-cladded symmetric LRSPP waveguides. The end-fire coupling method was used to excite LRSPP modes with cleaved polarization maintaining (PM) fibre. The measured mode power attenuation (MPA) was 6.7 dB/mm after using index-matched liquid at input and output fibre-waveguide interfaces. The results were compared with the theoretical calculations and simulations. Poor coupling efficiency and scattering due to the SiO2 are suspected for off-target measurements.

A novel process for the fabrication of Long Range Surface Plasmon Polariton (LRSPP) waveguide based biosensors is presented herein. The structure of the biosensor is comprised of Au stripe waveguide devices embedded in thick CYTOP claddings with a SiO2 solvent diffusion barrier and etch-stop layer. The SiO2 layer is introduced to improve the end quality of Au waveguide structures, which previously deformed during the deposit of the upper cladding process and to limit the over-etching of CYTOP to create micro-fluidic channels. The E-beam evaporation method is adapted to deposit a thin SiO2 on the bottom cladding of CYTOP. A new micro-fluidic design pattern is introduced. Micro-fluidic channels were created on selective Au waveguides through O2 plasma etching. The presented data and figures are refractive index measurements of different materials, thickness measurements, microscope images, and AFM images. Optical power cutback measurements were performed on fully CYTOP-cladded symmetric LRSPP waveguides. The end-fire coupling method was used to excite LRSPP modes with cleaved polarization maintaining (PM) fibre. The measured mode power attenuation (MPA) was 6.7 dB/mm after using index-matched liquid at input and output fibre-waveguide interfaces. The results were compared with the theoretical calculations and simulations. Poor coupling efficiency and scattering due to the SiO2 are suspected for off-target measurements.

The aim of this work was to find a correlation between the electrical, optical and microstructural properties of thin SiO2 layers containing group IV nanostructures produced by ion beam synthesis. The investigations were focused on two main topics: The electrical properties of Ge- and Si-rich oxide layers were studied in order to check their suitability for non-volatile memory applications. Secondly, photo- and electroluminescence (PL and EL) results of Ge-, Si/C- and Sn-rich SiO2 layers were compared to electrical properties to get a better understanding of the luminescence mechanism.

This dissertation presents thermal and thermoelectric measurements of nanostructures. Because the characteristic size of these nanostructures is comparable to and even smaller than the mean free paths or wavelengths of electrons and phonons, the classical constitutive laws such as the Fourier’s law cannot be applied. Three types of nanostructures have been investigated, including nanoscale constrictions patterned in a sub-100 nm thick silicon film, monatomic thick graphene ribbons supported on a silicon dioxide (SiO₂) beam, and indium antimonide (InSb) nanowires. A suspended measurement device has been developed to measure the thermal resistance of 48-174 nm wide constrictions etched in 35-65 nm thick suspended silicon membranes. The measured thermal resistance is more than ten times larger than the diffusive thermal resistance calculated from the Fourier’s law. The discrepancy is attributed to the ballistic thermal resistance component as a result of the smaller constriction width than the phonon-phonon scattering mean free path. Because of diffuse phonon scattering by the side walls of the constriction with a finite length, the phonon transmission coefficient is 0.015 and 0.2 for two constrictions of 35 nm x 174 nm x220 nm and 65 nm x 48 nm x 50 nm size. Another suspended device has been developed for measuring the thermal conductivity of single-layer graphene ribbons supported on a suspended SiO₂ beam. The obtained room-temperature thermal conductivity of the supported graphene is about 600 W/m-K, which is about three times smaller than the basal plane values of high-quality pyrolytic graphite because of phonon-substrate scattering, but still considerably higher than for common thin film electronic materials. The measured thermal conductivity is in agreement with a theoretical result based on quantum mechanical calculation of the threephonon scattering processes in graphene, which finds a large contribution to the thermal conductivity from the flexural vibration modes. A device has been developed to measure the Seebeck coefficients (S) and electrical conductivities ([sigma]) of InSb nanowires grown by a vapor-liquid-solid process. The obtained Seebeck coefficient is considerably lower than the literature values for bulk InSb crystals. It was further found that decreasing the base pressure during the VLS growth results in an increase in the Seebeck coefficient and a decrease in the electrical conductivity, except for a nanowire with the smallest diameter of 15 nm. This trend is attributed to preferential oxidation of indium by residual oxygen in the growth environment, which could cause increased n-type Sb doping of the nanowires with increasing base pressure. The deviation in the smallest diameter nanowire from this trend indicates a large contribution from the surface charge states in the nanowire. The results suggest that better control of the chemical composition and surface states is required for improving the power factor of InSb nanowires. On approach is to use Indium-rich source materials for the growth to compensate for the loss of indium due to oxidation by residual oxygen. / text

A novel process for the fabrication of Long Range Surface Plasmon Polariton (LRSPP) waveguide based biosensors is presented herein. The structure of the biosensor is comprised of Au stripe waveguide devices embedded in thick CYTOP claddings with a SiO2 solvent diffusion barrier and etch-stop layer. The SiO2 layer is introduced to improve the end quality of Au waveguide structures, which previously deformed during the deposit of the upper cladding process and to limit the over-etching of CYTOP to create micro-fluidic channels. The E-beam evaporation method is adapted to deposit a thin SiO2 on the bottom cladding of CYTOP. A new micro-fluidic design pattern is introduced. Micro-fluidic channels were created on selective Au waveguides through O2 plasma etching. The presented data and figures are refractive index measurements of different materials, thickness measurements, microscope images, and AFM images. Optical power cutback measurements were performed on fully CYTOP-cladded symmetric LRSPP waveguides. The end-fire coupling method was used to excite LRSPP modes with cleaved polarization maintaining (PM) fibre. The measured mode power attenuation (MPA) was 6.7 dB/mm after using index-matched liquid at input and output fibre-waveguide interfaces. The results were compared with the theoretical calculations and simulations. Poor coupling efficiency and scattering due to the SiO2 are suspected for off-target measurements.

A novel process for the fabrication of Long Range Surface Plasmon Polariton (LRSPP) waveguide based biosensors is presented herein. The structure of the biosensor is comprised of Au stripe waveguide devices embedded in thick CYTOP claddings with a SiO2 solvent diffusion barrier and etch-stop layer. The SiO2 layer is introduced to improve the end quality of Au waveguide structures, which previously deformed during the deposit of the upper cladding process and to limit the over-etching of CYTOP to create micro-fluidic channels. The E-beam evaporation method is adapted to deposit a thin SiO2 on the bottom cladding of CYTOP. A new micro-fluidic design pattern is introduced. Micro-fluidic channels were created on selective Au waveguides through O2 plasma etching. The presented data and figures are refractive index measurements of different materials, thickness measurements, microscope images, and AFM images. Optical power cutback measurements were performed on fully CYTOP-cladded symmetric LRSPP waveguides. The end-fire coupling method was used to excite LRSPP modes with cleaved polarization maintaining (PM) fibre. The measured mode power attenuation (MPA) was 6.7 dB/mm after using index-matched liquid at input and output fibre-waveguide interfaces. The results were compared with the theoretical calculations and simulations. Poor coupling efficiency and scattering due to the SiO2 are suspected for off-target measurements.

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The diploma thesis deals with morphology of cobalt thin film on clean Si(111) and on silicon dioxide thin film on Si(111) studied by AFM and XPS. It is also study of selective growth of cobalt on lattice made by focused ion beam and electron lithography. In the last part, the growth of metals (Fe, Co) on surface oxide on Ni3Al(111) was studied.

The aim of this work was to find a correlation between the electrical, optical and microstructural properties of thin SiO2 layers containing group IV nanostructures produced by ion beam synthesis. The investigations were focused on two main topics: The electrical properties of Ge- and Si-rich oxide layers were studied in order to check their suitability for non-volatile memory applications. Secondly, photo- and electroluminescence (PL and EL) results of Ge-, Si/C- and Sn-rich SiO2 layers were compared to electrical properties to get a better understanding of the luminescence mechanism.

An environmentally friendly, and contamination free process for etching and cleaning semiconductors is critical to future of the IC industry. Under the right conditions, water has the ability to meet these requirements. Water becomes more reactive as a function of temperature in part because the number of hydronium and hydroxyl ions increase. As water approaches its boiling point, the concentration of these species increases over seven times their concentrations at room temperature. At 150 °C, when the liquid state is maintained, these concentrations increase 15 times over room temperature. Due to its enhanced reactivity, high temperature water (HTW) has been studied as an etch and clean of thermally grown SiO2, Si3N4, and low-k films. High temperature deuterium oxide (HT-D2O) behaves similarly to HTW; however, it dissociates an order of magnitude less than HTW resulting in an equivalent reduction in reactive species. This allowed for the effects of reactive specie concentration on etch rate to be studied, providing valuable insight into how HTW compares to other high temperature wet etching processes such as hot phosphoric acid (HPA). Characterization was conducted using Fourier transform infrared spectroscopy (FTIR) to determine chemical changes due to etching, spectroscopic ellipsometry to determine film thickness, profilometry to measure thickness change across the samples, scanning electron microscopy (SEM), contact angle to measure changes in wetting behavior, and UV-Vis spectroscopy to measure dissolved silica in post etch water. HTW has demonstrated the ability to effective etch both SiO2 and Si3N4, HT-D2O also showed similar etch rates of Si3N4 indicating that a threshold reactive specie concentration is needed to maximize etch rate at a given temperature and additional reactive species do not further increase the etch rate. Because HTW has no hazardous byproducts, high temperature water could become a more environmentally friendly etchant of SiO2 and Si3N4 thin films.