In this experiment, selenides are used as the precursor and CIGS thin films are synthesized through selenization. At the first stage, the precursor with the layers of In-Se/Ga-Se/Cu-Se failed to produce CIGS thin films when the temperature is going up 10¢J per minute to the target temperature during selenization and the change of the composition of the precursor, the temperature duration and the temperature of selenization is tried. Later, the reaction is successfully done when the layers are changed into In-Ga-Se/Cu-Se with the temperature going up 10¢J per minute to 550¢J, lasting for 5 minutes. With various Ga containments, I analyize the optical and electronic properties. In order to see the composition of CIGS thin films in different propotion of Cu/In+Ga and Ga/In+Ga, I use EPMA and the properties of XRD peak shift with the containment of Ga to estimate the proportion of the containment of Ga. I found the conclusions by EPMA and XRD are very similar. At 150¢J, the precursors Cu-Se, In-Se and Ga-Se are fabricated and XPS, Raman, XRD or else are used to speculate the bonding of them. In addition, using XRD and Raman to analyze In-Ga-Se/Cu-Se selenides, I found, between 150¢J and 300¢J, Cu2-xSe bonding is the main; at 350¢J, InSe bonding intensifies obviously; at 400¢J, CIGS is formed.

This experiment was growing CZTSe (Cu2ZnSnSe4) single phase thin film by using rapid thermal selenization process on Se/Cu/Sn/Zn/SLG thin film. It can complete the reaction to avoid Cu2SnSe3 appearing during the RTP. To discuss the effect of nitrogen and selenium flow rates on the thin film quality and adhesion, and to confirm the composition of the CZTSe single phase thin film. And I also annealed and changed the Se/Cu/Zn/Sn/SLG stacked layer to improve the thin film uniformity. Finally, it was stacked on the Mo/SLG and annealed by varying raising rate of temperature in order to enhance the adhesion. The results indicated that the various flow of nitrogen could cause different conditions. The element selenium easily escaped due to lower nitrogen flow could not provide enough outer pressure; larger nitrogen flow carried the extra high vapor pressure gas go through the surface of substrate and lead to the worse adhesion with the substrate. Unfortunately, using the analysis of X-ray diffraction and Raman spectrum couldn¡¦t determine the single phase of CZTSe. However, it has been confirmed by optical bandgap. In this experiment, the compositions of CZTSe single phase are found to be Cu-poor and Zn-poor, the optical bandgap (Eg) is 0.88~1.04 eV, and the resistivity (£l) is 1~10-2 £[-cm. By the rapid thermal selenization process, because of the rapid gradient of temperature, it brought out the diffused non-uniformly among the precursors. Therefore, the uniformity of thin films would not be perfect. As the result, re-annealing and change are the efficient methods to improve the uniformity of the thin film. The problems are un-wetting effect exists in the stacked liquid phase Se/Cu/Zn/Sn and the sodium glass substrates. The morphologies of the thin films are island connection. Finally, increasing the temperature in 15 oC per second and annealing the thin film for one minute at 250 oC with the stacked layer of Se/Cu/Sn/Zn/Mo/SLG are successful to promote the adhesion between the CZTSe and Mo.

Interactions between Mn12–acetate molecular magnets and thin gold films have been explored in light of the theory of weak localization. Low-temperature measurements of the magnetoresistance of gold films of varying thicknesses, with and without the presence of a surface layer of Mn12–acetate, have been performed using a dilution refrigerator. Quantitative fits to the data using the predictions of weak localization theory were performed using a least-squares fit method in order to determine characteristic times for elastic, inelastic, spin-orbit and spin scattering events within the gold. These data indicate that the presence of Mn12–acetate on the surface of the gold film leads to a significant enhancement of the spin scattering within the gold films.

An investigation was conducted to determine whether a “size effect” phenomenon for one particular thermophysical property, thermal conductivity, actually exists for amorphous poly(methyl methacrylate) (PMMA) films with thicknesses ranging from 40 nm to 2 μm. This was done by using a non-contact, non-invasive, in-situ Transient Thermo-Reflectance (TTR) laser based technique. The results demonstrated that the intrinsic thermal conductivity of a 40 nm PMMA film deposited on native oxide of silicon increases by a factor of three over bulk PMMA values, and a distinct increase in the thermal conductivity of PMMA film was observed in ultra-thin (sub 100 nm) films. This confirmed the importance of film thickness for the through-plane thermal conductivity value of PMMA film on native oxide of silicon.

Copper has become the metal of choice for metallization, owing to its high electrical and thermal conductivity, relatively higher melting temperature and correspondingly lower rate of diffusivity. Most of the current studies can get high strength copper thin films but on an expense of conductivity. This study proposes a technique to deposit high strength and high conductivity copper thin films on different silicon substrates at room temperature. Single crystal Cu (100) and Cu (111) have been grown on Si (100) and Si (110) substrates, respectively. Single crystal Cu (111) films have a high density of growth twins, oriented parallel to the substrate surface due to low twin boundary energy and a high deposition rate. The yield strengths of these twinned Cu films are much higher than that of bulk copper, with an electrical resistivity value close to that of bulk copper. X-ray diffraction, transmission electron microscopy and nanoindentation techniques were used to show that high density twins are sole reason for the increase in hardness of these thin films. The formation of growth twins and their roles in enhancing the mechanical strength of Cu films while maintaining low resistivity are discussed.

We use molecular beam deposition (MBD) system to grow CuAlSe2 thin film. The films have been characterized by electrical measurements but also by X-ray diffraction, electron probe microanalysis, optical measurements, scanning electron microscopy and photoluminescence. It is shown that CuAlSe2 thin film is chalcopyrite structure with a band gap of 2.65eV, p-type conductivity and the smallest resistivity is 1.26¡Ñ102(

The subject of this dissertation is to use precision cutting and polishing techniques to fabricate thin-film filters(TFFs) with a thickness of less than 100 £gm, and to discuss their applications in Wavelength Division Multiplexing(WDM) systems. To demonstrate the feasibility of the proposed technology, Si benches with wet-etching V grooves for precision fiber positioning and saw-cutting U grooves for placing the TFFs were fabricated. The insertion loss of the bench at 1.55 £gm input lights is less than - 0.5 dB. In addition, the stress induced pass band variations of band-pass TFF for Coarse WDM(CWDM) applications were studied. The pass band width of the band-pass TFF is 20 nm. After reducing the thickness of the 1.5 mm ¡Ñ 1.5 mm BP TFF to a thickness of 50 £gm, the center wavelength shift and pass band reduction are 4.64 nm and 1.54 nm, respectively.

Based on the convenience of the use, the traditional display will be replace by the flexible display. According to this reason, it is very important to study on the reliability of the amorphous silicon (a-Si:H) thin-film transistor (TFT) used in LCD under different mechanical strain. In this research, besides of the above-mentioned we also applied AC stress, to understand the influence of AC stress on an a-Si:H TFT under different mechanical strain. The influence of mechanical strain on the performance of an hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with different channel length and width on metal foil substrate under uniaxial compressive or tensile strain was studied, where the strain is parallel to the TFT source-drain current path. The process of TFT with the maximum temperature 190¢XC exhibited a field-effect mobility of 0.1 cm2/Vs and a threshold voltage of 1.95 V and the leakage current of less than 10-13 A. The TFTs were strained by inward (compression) or outward (tension) cylindrical bending. The mobility had a slightly change under the mechanical strain, which was due to the change in the disorder under bending strain. We also researched on the influence of uniaxial compressive (tensile) strain on the performance of a-Si:H TFTs under different AC stress conditions. When the a-Si:H TFTs were strained and applied AC stress, we found the performance of a-Si:H TFTs were affected more then the flat ones.

In recently yesrs,Thin-film transistors (TFTs) including an active layer of amorphous silicon or polycrystalline silicon have been widely employed as the pixel-driving elements of a liquid crystal display (LCD). Particularly, a-Si:H TFT is advantageous to the production of large screen displays and facilitates mass-production. a-Si:H has high photoconductivity which results in high off-state leakage currents of a-Si:H TFT under light illumination . Particularly, the off-state leakage current under light illumination is a serious problem in the projection and/or video displays which require high intensity backlight illumination.As the resolutions is higher , the TFT¡¦s performance must be higher to achieve the short charge time each line can charge. The performance includes mobility ,on current, off current, photo leakage current, threshold voltage ,and subthrehold swing. Furthermore, the to improve the mobility of thin-film transistors (TFT) to enable total integration of peripheral electronics in flat panel displays and imagers has led to recrystallized polycrystalline silicon (poly-Si) as the material of choice. However, laser recrystallized polycrystalline silicon suffers from high cost , complex processing, and significant nonuniformity over a large area. Indeed, the direct deposition of good-quality low-temperature poly films is highly desirable and constitutes a promising alternative. In this thesis, we use HDPCVD to fabricate direct deposition poly-TFT successfully.Through plasma passivation, we improve the characteristic of device. The photo-Leakage current have been reduced obviously to our device under light illumination, and is benefit to higher intensity light of large screen display. And our TFT device exhibits stable characteristics with voltage and current stress , and it¡¦s also confirmed that the device is reliable. On the characteristic of device, the direct-deposited poly TFT device exhibits higher effective carrier mobility than that of conventional one. For that reason, the high performance provides the potential of the direct-deposited poly TFT to apply for AMLCD and AMOLED technology.

In this study, the reactive rf magnetron sputtering was used to deposit Ba(Zr0.1,Ti0.9)O3 (BZT) ferroelectric thin films on ITO/Glass substrate, and MFM structure was fabricated. The effects of various sputtering parameters on the characteristics of thin films, such as the oxygen concentrations, substrate temperature, rf power and chamber pressure were discussed, and then the optimal sputtering parameters were determined. The annealing process of rapid thermal annealing (RTA) and conventional thermal annealing (CTA) were used to promote the ferroelectric characteristics. The physical characteristics of BZT thin films were obtained by the analyses of SEM, XRD patterns and AFM morphologies. The surfaces, cross-section, crystallization and surface roughness of thin films were discussed. To investigate the electrical properties, the capacitance-voltage (C-V), current-voltage (I-V) and P-E hysteresis characteristics of BZT thin films were measured by the HP4284A impedance analyzer, HP4156C semiconductor parameter analyzer and computerized radiant technology (RT66), respectively. Furthermore, characteristics of the MFM structure were discussed. From the experimental results, the dielectric constant with optimal sputtering parameters was about 84, and the leakage current of thin film was about 6 ¡Ñ 10-8 A/cm2 when the applied electrical field of thin film was at 0.4 MV/cm. The remanent polarization (Pr) and coercive field (Ec) were 2.87 £gC/cm2 and 259 kV/cm from the P-E hysteresis loops, respectively. In addition, the ferroelectric characteristics of the thin film could be improved after rapid thermal annealing at 550¢J for 3 minutes. The remanent polarization (Pr), coercive field (Ec) and saturated polarization (Ps) were 3.42 £gC/cm2, 266 kV/cm and 6.99 £gC/cm2, respectively.