Doctor of Philosophy / Department of Chemistry / Daniel A. Higgins / This dissertation describes the application of wide-field single-molecule fluorescence microscopy techniques to investigations of DNA-surface interactions on chemically graded organosilane surfaces. The adsorption and desorption behaviors of double-stranded (ds) plasmid DNA along the amino-trimethoxysilane and octyl-trichlorosilane gradients were explored as a function of solution pH, solution ionic strength and surface properties. The results provide an improved fundamental understanding of DNA interactions with different surfaces and are certain to aid in the development and advancement of DNA-based biological and biomedical devices. Three distinct experiments were performed in completion of the work for this dissertation. In the first study, total internal reflection fluorescence (TIRF) microscopy was employed to study DNA interactions with aminosilane gradient surfaces under relatively acidic and basic environments. Electrical potentials were applied to assist DNA adsorption and desorption. The single-molecule data clearly showed that DNA capture and release was achieved on the monolayer and submonolayer coated regions of the aminosilane gradient surface under relatively basic pH conditions, with the help of an electrical potential. Meanwhile, DNA adsorption was found to be quasi-reversible on the multilayers at the high aminosilane end of the gradient in the relatively acidic solution. The results of these studies demonstrate the importance of manipulating the electrostatic interactions of DNA with charged surfaces in order to achieve DNA capture and release. The fundamental knowledge of the DNA-surface interactions gained in these studies will be helpful in diverse fields ranging from the layer-by-layer assembly of polyelectrolyte-based thin films to the selective electronic sensing of charged biomolecules. In the second study, the local dielectric properties of the least polar environments in dsDNA were assessed by using the solvatochromic dye, nile red, as a polarity-sensitive probe. TIRF spectroscopic imaging methods were employed in these studies. Although the dielectric constant within the least polar regions of dsDNA was previously predicted by theoretical and computational methods, no experimental measurements of its value had been reported to date. The results provide important knowledge of the factors governing the polarity of DNA microenvironments to which intercalators bind, and provide vital experimental support for the values determined in computational studies. In the third study, TIRF microscopy and single molecule tracking methods were employed to study DNA interactions with an opposed two-component C8-silane and aminosilane gradient surface as a function of solution pH. The mobility of surface-adsorbed DNA molecules was explored and quantified in these studies. The preliminary results further demonstrated the importance of electrostatic interactions over hydrophobic interactions in governing the adsorption of DNA to surfaces. The mobility of surface-adsorbed DNA was found to be largely independent of position along the two-component gradient. These studies were originally undertaken as a route to observation of cooperative effects that are believed to govern DNA-surface binding. Unfortunately, no clear evidence of cooperative effects was observed at the mixed regions of the two-component gradient surface.

O uso de plantas aromáticas ricas em óleos essenciais (OE) como agentes saneantes ou conservantes remonta às civilizações antigas. Nos dias atuais, o aumento nos surtos de infecções em hospitais e creches, bem como da resistência bacteriana, aumentou também a demanda por desinfetantes. Os OE\'s são reconhecidos por sua atividade antimicrobiana, mas a maioria dos estudos foi realizada na fase líquida. Buscando aproveitar a característica de alta volatilidade dos OE´s, desenvolvemos uma metodologia para a avaliação da atividade antimicrobiana na fase vapor. Nesse sentido, utilizamos o OE extraído de Hesperozygis myrtoides (St.Hil. ex Benth.) Epling (Lamiaceae), uma espécie nativa com ocorrência nos estados do sudeste do Brasil. A planta foi coletada em Campos do Jordão e o óleo teve um rendimento médio de 1,99% (m/m), sendo os componentes majoritários pulegona (48,8%) e isomentona (16,2%). A atividade antimicrobiana foi comparada na fase líquida, pelo método da microdiluição em placa, com a fase vapor, pelo método da placa invertida modificado. Os resultados indicaram uma atividade mais potente para a fase vapor do que na fase líquida. Staphylococcus aureus apresentou CIM de 0,392 mg. L-1 na fase vapor e 19 mg. L-1 na líquida, já para Candida albicans foi 0,833 mg. L-1 , na fase vapor e 94,4 mg. L-1 na fase líquida. Entretanto, para Escherichia coli, Pseudomonas aeruginosa, Bacilus subtillis e Aspergillus brasiliensis os valores da CIM, em ambas as fases, foram acima de 100 mg. L-1, sendo então considerado inativo. A atividade antimicrobiana na fase vapor é mais intensa devido aos OE´s se ligarem diretamente ao microrganismo sem a interferência do solvente. A toxicidade do OE foi avaliada frente a células tumorais humanas de mama (MCF-7) e próstata (CP-3) e em células de fibroblastos murinos normais (BALB/3T3) e indicaram uma DL50 superior a 2.014 mg.Kg-1, podendo ser considerado seguro. A atividade antimicrobiana associada à baixa toxicidade é um forte indicativo que este OE pode ser utilizado para descontaminação ambiental na fase vapor, inclusive em ambientes habitados. / Aromatic plants rich in essential oils (EO) have been used as sanitizing agents or preservatives since early civilizations. Nowadays, the increase in infectious outbreaks in hospitals and nurseries, as well as the bacterial resistance has also increased the demand for disinfectants. EO\'s are known for their antimicrobial activity, but most reports is in the liquid phase. Due to the EO high volatility, we have developed a methodology for evaluating the antimicrobial activity in the vapor phase. In this sense, we use the Hesperozygis myrtoides (St.Hil. Ex Benth.) Epling (Lamiaceae) EO, a native species occurring in southeastern Brazil. The plant was collected in Campos do Jordão (SP) and the oil had an average yield of 1.99% (m/m) and as major components pulegone (48.8%) and isomenthone (16.2%). Antimicrobial activity was compared in the liquid phase, microdilution method, with the vapor phase, modified inverted plate method. The results indicated that the vapor phase was a more potent than the liquid. Staphylococcus aureus afforded MIC 0.392 mg. L-1 for the vapor phase and 19 mg. L-1 for the liquid phase, while for Candida albicans it was 0.833 mg. L-1 for the vapor and 94.4 mg. L-1 for the liquid. However, Escherichia coli, Pseudomonas aeruginosa, Bacillus subtilis and Aspergillus brasiliensis had in both phases MIC\'s higher than 100 mg. L-1, considered then inactive. The vapor phase antimicrobial activity is more intense because the EO are free to directly bind with the microorganism without the solvent interference. Toxicity was evaluated against human breast tumor cells (MCF-7) and prostate cancer (PC-3) and with normal murine fibroblast cells (BALB/3T3) indicating a DL50 higher 2,014 mg.Kg-1, and it was considered safe. The antimicrobial activity associated with the low toxicity is a strong indication that this EO vapors can be used for environmental decontamination, even in inhabited places.

Orientador: Carlos Kenichi Suzuki / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Mecânica / Made available in DSpace on 2018-08-19T09:14:43Z (GMT). No. of bitstreams: 1 Shimahara_AlbertoYassushi_M.pdf: 5253309 bytes, checksum: ba0303e6e0217876246733070863f5fc (MD5) Previous issue date: 2002 / Resumo: Neste trabalho estudou-se a morfologia e o tamanho dos agregados de sílica em preforma porosa preparadas pelo processo VAD por MEV em conjunto com um software analisador de imagens e suas relações com os parâmetros de deposição. As observações revelam que o tamanho dos agregados variam entre 0,06 à 0,30 ?m sendo influenciados principalmente pela temperatura, que é fortemente influenciada pela distância alvo/maçarico e pela razão H2/O2 empregado. No centro da preforma a dimensão média dos agregados é maior e se reduz ao longo do raio da preforma porosa, na qual ocorre uma tendência a uma distribuição bimodal na região externa da preforma e mono modal na direção central da preforma influenciada pelo movimento de rotação do alvo. Para distâncias alvo/maçarico pequenas nota-se que os agregados se pré-sinterizam, devido à alta temperatura da chama e para distâncias longas os agregados tendem a se aglomerar ligados fragilmente entre si, devido a pouca ação da chama sobre a superfície de deposição / Abstract: In this work we studied the morphology and size of silica aggregates in porous preform prepared by VAD with SEM in conjunction with a Image Analyzer software and the relations with the deposition parameters. The observations reveal that the size of aggregates vary between 0.06 to 0.30 ?m being mainly influenced by temperature, which is strongly influenced by the distance of the target/blowtorch and reason H2/O2. In the center of the preform the average size of aggregates is greater and reduces along the radius of the porous preform, which is a trend to a bimodal distribution in the outer region of the preform and mono-modal in central direction of preform influenced by the of rotation of the target. To small distances target/blowtorch; note that the aggregates are melted due to the high temperature of flame and for long distances the aggregates are weekly connected among themselves, because the small flame action over the surface / Mestrado / Materiais e Processos de Fabricação / Mestre em Engenharia Mecânica

No description available.

No description available.

Orientador : Carlos Kenichi Suzuki / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Mecanica / Made available in DSpace on 2018-08-04T01:44:29Z (GMT). No. of bitstreams: 1 Ono_Eduardo_M.pdf: 3494337 bytes, checksum: 6a111a737f2e9b27797fca1dc7c3fe90 (MD5) Previous issue date: 2004 / Resumo: Um novo processo VAD ("Vapor-phase Axial Deposition"), em desenvolvimento no Laboratório Ciclo Integrado do Quartzo - LIQC, FEM, UNICAMP, introduz uma série de inovações tecnológicas e maior viabilidade econômica sobre os atuais processos de fabricação de fibra óptica. Para a produção de uma fibra de alta qualidade, a uniformidade geométrica da preforma porosa, gerada na etapa de deposição do processo, possui grande relevância na uniformidade das características da fibra final, tais como a atenuação e a dispersão. Para o controle da geometria da preforma em deposição, desenvolveu-se um sistema em LabVIEW, para a plataforma PC, para atuar continuamente e em tempo real na etapa de deposição de modo a manter o diâmetro da preforma constante. Em sua essência, o sistema de controle realimentado, baseado no controlador PID, atua na velocidade do mecanismo de posicionamento da preforma em função do valor do diâmetro na região inferior da preforma. Esse diâmetro é obtido pelo processamento da imagem adquirida por uma câmera de vídeo CCD da região da preforma em deposição. Embora tenha sido desenvolvido para a escala laboratorial, o sistema mostrou bom desempenho e estabilidade, podendo ser empregado na produção industrial em grande escala de preformas para fibra óptica. Nesse sistema, variações dimensionais no diâmetro da preforma da ordem de 0,3 mm são corrigidos, obtendo-se uma precisão cinco vezes maior quando comparado a sistemas convencionais, favorecendo uma menor incidência de rejeitos de produção de preformas e, conseqüentemente, menor custo de produção / Abstract: An advanced V AD (Vapor-phase Axial Deposition) technique has been developed at Laboratory of Integrated Quartz Cycle - LIQC - FEM - UNICAMP. It introduces a series of technological innovations with a greater economical viability over actual optical fiber manufacturing processes. For a high quality optical fiber production, several steps and process parameters must be carefully set. The geometrical uniformity of the preform during the deposition stage is one of the most important parameter for the final uniformity, which determines the characteristics of the final fiber in terms of attenuation and dispersion. To control the preform geometry during the deposition, a computer system based on Lab VIEW platform was developed, to act continuously and in real time on the deposition stage, in order to maintain constant the preform diameter. In its essence, the feedback system, based on PID controller, acts on the speed of the preform positioning mechanism, according to the value of the diameter detected in. the deposition region. This diameter is obtained through the image processing grabbed from a CCD video camera. Although, it was developed in a laboratorial scale, the system showed a good performance and stability, which can be applied on an industrial mass production scale for fiber optics. In this system, dimensional variations in the order of 0.3 mm on the preform diameter can be corrected, that corresponds to a precision about 5 times better than that achieved by conventional industrial systems, with a benefit of a lower incidence of production rejects and, therefore, a lower production cost / Mestrado / Materiais e Processos de Fabricação / Mestre em Engenharia Mecânica

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第22449号 / 工博第4710号 / 新制||工||1736(附属図書館) / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 川上 養一, 教授 野田 進, 教授 山田 啓文 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

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The growth of ZnO single crystals and ZnO thin films on Si substrates by an open-system vapor phase method was studied in this thesis. The as-grown ZnO single crystals were investigated by means of photoluminescence (PL). Two unique emissions were observed in virgin and hydrogenated crystals. The up-to-now attempts for the p-type doping of ZnO were summarized and our doping studies were performed using nitrogen and antimony. The seed-free and open-system vapor phase method is a simple and low cost approach to grow good quality ZnO single crystals. The growth parameters, including flow rates of N2, H2, O2, and growth temperatures, have various influences on the crystal growth, and also on the optical properties of the as grown crystals. The as-grown crystals are c-axis oriented needle crystals, and the crystals typically have a maximum length of 40 mm and a maximum diameter of 1 mm. The needle-shaped crystals are n-type with main donors due to Al, Ga, and In impurities, as determined from the PL spectra. Two unidentified PL emission lines (P1 at 3.3643 eV and P2 at 3.3462 eV) are observed in our vapor phase grown ZnO single crystals. P1 is attributed to the recombination of an exciton bound to a shallow donor，which has a binding energy of 42.2 meV. Hydrogenation of the as-grown ZnO single crystal leads to the appearance of the P2 line and a great reduction of the P1 line. Subsequent isochronal annealing in the ambient atmosphere leads to gradual reduction of P2 and the reappearance of P1. The PL measurements indicate that hydrogen is involved in the defect origins of the P2 line. ZnO thin films were deposited on Si substrates by the vapor phase method. Three different types of configurations with alternative source materials and oxidizers were employed and compared. It is demonstrated that, methods with lower growth temperatures are easier to deposit homogenous ZnO films on Si substrate. Donor-acceptor-pair (DAP) transition at 3.245 eV and its phonon replicas were observed in the PL spectra of the thin films, which are grown by the hydrogen-free vapor phase method. The appearance of DAP transition indicates the presence of acceptor in the films. The long-standing challenge of p-type doping in ZnO is mainly attributed to the low valence band maximum (VBM) at the absolute energy scale, the spontaneous formation of compensating defects and the lack of appropriate acceptors with small ionization energy. Two attempts for the p-type doping of ZnO were performed by nitrogen diffusion into ZnO single crystals from plasma after the growth or by in-situ doping antimony during the growth of ZnO films. No hole conductivity could however be achieved in our doped samples. / In dieser Arbeit wurde das Wachstum von ZnO-Einkristallen und Dünnfilmschichten auf Si durch chemische Gasphasenabscheidung in einem offenen System untersucht. Die hergestellten ZnO-Einkristalle wurden mit Photolumineszenzmessungen (PL) untersucht. Es konnten sowohl in unbehandelten als auch in mit Wasserstoff behandelten Proben zwei charakteristische Linien beobachtet werden. Sowohl die bisherigen Versuche zur p-Typ Dotierung von ZnO als auch die in dieser Arbeit durchgeführten Versuche mit Stickstoff und Antimon werden zusammengefasst und präsentiert. Die Keimkristall-freie Gasphasenabscheidung (CVD) in offenen Systemen ist eine einfache und kostengünstige Methode zur Herstellung von qualitativ hochwertigen ZnO-Einkristallen. Die Wachstumsparameter, einschließlich der Flussraten von N2, H2 und O2 sowie der Wachstumstemperatur beeinflussen das Kristallwachstum sowie die optischen Eigenschaften der hergestellten Kristalle. Die hergestellten Kristalle wachsen typischerweise als entlang der c-Achse orientierte Nadeln mit Längen von bis zu 40 mm und Durchmessern von bis zu 1 mm. Die nadelförmigen Kristalle besitzen eine n-Typ Dotierung, welche hauptsächlich durch Verunreinigung mit Al, Ga und In verursacht wird. Zwei bisher nicht identifizierte PL-Linien (P1 bei 3,3643 eV und P2 bei 3,3462 eV) wurden in den hergestellten Kristallen beobachtet. P1 wird der Rekombination von Exzitonen an flachen Donatoren mit einer Bindungsenergie von 42,2 meV zugeordnet. Eine Wasserstoffbehandlung der hergestellten Kristalle führt zum Erscheinen der P2-Linie und einer starken Unterdrückung der P1-Linie. Anschließende isochronische Temperung in Luft führt zu einer schrittweisen Reduzierung der Intensität der P2-Linie und zu einer Verstärkung der P1-Linie. Photolumineszenzmessungen weisen auf eine Korrelation von P2 mit Wasserstoff hin. Zusätzlich wurden mit der CVD-Methode dünne ZnO-Schichten auf Si-Substraten abgeschieden. Drei unterschiedliche Konfigurationen mit verschiedenen Ausgangsmaterialien (ZnO-Pulver bw. Zn-Pulver) und verschiedenen Oxidationsmitteln (O2 bzw. Wasser) wurden untersucht und verglichen. Es wird gezeigt, dass mit den Konfigurationen mit geringerer Wachstumstemperatur am einfachsten homogene ZnO-Schichten auf Si abgeschieden werden können. Ein Donator-Akzeptor-Paar-Übergang (DAP) bei 3,245 eV und die dazugehörigen Phononenrepliken wurden in den Schichten beobachtet, welche in einer Wasserstoff-freien Konfiguration abgeschieden wurden. Diese DAP-Übergänge sind ein Hinweis auf die Anwesenheit von Akzeptoren. Die seit langem bestehende Herausforderung der p-Typ-Dotierung von ZnO hat ihre Wurzeln hauptsächlich in dem niedrig liegenden Valenzbandmaximum (VBM) auf der absoluten Energieskala, der spontanen Bildung von kompensierenden Defekten sowie dem Mangel an geeigneten Akzeptoren mit geringer Ionisierungsenergie. Zwei Versuche zur p-Typ-Dotierung von ZnO durch Behandlung der Kristalle mit N-Plasma bzw. durch in-situ Dotierung mit Sb während des Kristallwachstums wurden durchgeführt. Allerdings konnte damit keine nachweisbare Löcherleitung in den behandelten Proben erreicht werden.

Im Rahmen der Arbeit wurde eine neuartige Variante der Hochtemperatur-Gasphasenepitaxie (HTVPE) für die Herstellung von GaN entwickelt, die eine hohe Flexibilität und bessere Kontrolle des Züchtungsprozesses ermöglicht. Für die Realisierung des Konzeptes wurde eine Züchtungsanlage für die HTVPE entworfen und aufgebaut. Des Weiteren wurde ein numerisches Modell des Wärme- und Stofftransports entwickelt und für die Untersuchungen der Transportphänomene im HTVPE-Reaktor sowie für die Weiterentwicklung des Züchtungsreaktors verwendet. Die systematischen Züchtungsexperimente zeigten eine gute Übereinstimmung mit den Simulationsergebnissen und lieferten ein besseres Verständnis der HTVPE und ihres Anwendungspotentials. Die versbesserte Prozesskontrolle ermöglichte die erstmalige Anwendung der Niedertemperatur-Nukleation für die heteroepitaktische Abscheidung von GaN auf Saphir mit der HTVPE. Weiterhin wurden Wachstumsraten über 80 µm/h erreicht und das Potential der HTVPE für die Herstellung von GaN-Volumenschichten demonstriert.