La structure de bande et les propriétés électroniques des nanofils d’InAs et d’InSb sont étudiées par transport électronique en régime quasi-balistique et sous un champ magnétique montant jusqu’à 55T. Le régime quasi-balistique est mis en évidence par la quantification de la conductance. La structure de bande est sondée par l’analyse des plateaux de conductance en fonction de la concentration électronique. L’application du champ magnétique lève la dégénérescence de spin et la dégénérescence orbitale. Sous champ magnétique perpendiculaire à l’axe du nanofil, les bandes évoluent vers la quantification de Landau, accompagnée d’une réduction de la rétrodiffusion. Des fluctuations quasi-périodiques de la conductance sont mesurées en fonction du champ magnétique parallèle à l’axe du nanofil. Elles révèlent le confinement des porteurs à l’intérieur du nanofil et la formation d’orbites de Landau dans la direction du transport. Le transport électronique cohérent est mis en évidence par l’observation de fluctuations universelles de conductance et du régime de Fabry-Pérot électronique. Enfin, la mesure de photoconductivité révèle la présence de barrières de Schottky au niveau des contacts et une anisotropie en fonction de la direction de polarisation linéaire inattendue pour des nanofils d’InSb de structure cristalline Blende de Zinc. / The subband structure and electronic properties of InAs and InSb nanowires are studied experimentally by measuring the electronic transport in the quasi-ballistic regime and under magnetic field up to 55T.The quasi-ballistic regime is highlighted by the conductance quantization. The band structure is probed by analyzing the conductance plateaus as a function of the gate voltage. The application of a magnetic field lifts the orbital and spin degeneracy. Under a magnetic field perpendicular to the NW axis subbands evolved towards Landau quantization together with backscattering reduction. Fluctuations of the magneto-conductance are observed in function of magnetic field parallel to the nanowire axis. They reveal the carriers confinement within the nanowire and Landau orbits emergence in the transport direction. The coherent electron transport is jointly studied in these systems. It is highlighted by the observation of universal conductance fluctuations and electronic Fabry-Pérot oscillations. Finally the low-temperature photoconductivity measurement reveals the presence of Schottky barriers at the contacts and unexpected anisotropy according to the direction of linear polarization for InSB Zinc Blende nanowires.

Tato diplomová práce je zaměřená na výrobu Au-PANI-Au nanodrátů. Prezentovaná výroba nanodrátů je založená na elektrochemické depozici různých kovů a polymerizaci polyanilínu do porézních šablon z porézní anodické aluminy připravených anodizací hliníku. Teoretická část pojednává o základech elektrochémie a porézní anodické aluminy.

This work focuses on the development of metal nanowire networks for the use as transparent electrodes in small-molecule organic solar cells. Broad adoption of organic solar cells requires inexpensive roll-to-roll processing on flexible, lightweight substrates. Under these conditions, traditional metal oxide electrodes suffer from significant drawbacks such as brittleness and cost. In contrast, metal nanowire networks provide properties more suitable for high-throughput processing and thus, are investigated here as an alternative. They combine the high-conductivity of metals with the advantage of optical transparency found in aperture-structured networks. The process chain from nanowire deposition to cell integration is examined with silver and copper nanowire material. Two techniques are presented for deposition. While dip-coating is investigated in detail, including a discussion of the most important parameters, spray-coating is demonstrated as an alternative for large area applications. Since the nanowires are barely conductive after deposition, post-treatment steps are used to achieve a performance comparable to standard metal oxide films such as tin-doped indium oxide (ITO). The inherent roughness of nanowire electrodes is addressed by using a conductive polymer as a planarization layer. On top of optimized electrodes, small-molecule organic solar cells are deposited with a UHV thermal evaporation process. Completed cells are tested and performance is found to be comparable to the used standard transparent electrodes. Additionally, a new approach to achieve aligned nanowire network structures is demonstrated. The additional degree of order is used to illustrate optical effects of silver nanowire networks. Furthermore, these aligned networks exhibit anisotropic conductivity. This effect is discussed and simulations are performed to reproduce the observations. The freedom of network design is used to achieve superior conductivity compared to standard random structures. / Im Fokus dieser Arbeit steht die Entwicklung von Metall-Nanodraht-Netzwerken für die Anwendung in transparenten Elektroden für organische Solarzellen. Eine breite Verwendung von organischen Solarzellen setzt eine kostengünstige Rolle-zu-Rolle Fertigung auf flexiblen und leichten Substraten voraus. Unter diesen Bedingungen leiden traditionell verwendete Metalloxid-Elektroden unter erheblichen Nachteilen, wie Brüchigkeit und Preis. Im Gegensatz dazu zeigen Metall-Nanodraht-Netzwerke deutlich bessere Eigenschaften und werden deshalb hier als alternative Elektroden untersucht. Die Netzwerke kombinieren die hohe Leitfähigkeit von Metallen mit einer hohen Transmittivität in Folge der netzwerkbedingten Apertur. Die Prozesskette von der Nanodraht-Abscheidung bis zur Zellintegration wird für Silber- und Kupferdrähte untersucht. Zwei Techniken für die Abscheidung werden präsentiert. Ein Tauchverfahren wird detailliert untersucht und die zugehörigen Parameter werden diskutiert. Für große Flächen wird eine Sprühbeschichtung als Alternative aufgezeigt. Da die abgeschiedenen Netzwerke eine schlechte Leitfähigkeit besitzen, sind Nachprozessierungsschritte notwendig um gute Leitfähigkeiten im Bereich von üblichen Elektroden wie Indium-Zinn-Oxid (ITO) zu erreichen. Die Rauheit der Nanodraht-Elektrode wird mit Hilfe einer glättenden Polymerschicht behoben. Auf den optimierten Elektroden werden organische Solarzellen aus kleinen Molekülen in einem thermischen UHV-Prozess abgeschieden. Die Zellen werden getestet und zeigen Eigenschaften vergleichbar zu üblichen transparenten Elektroden. Zusätzlich wird ein neuer Ansatz zur Herstellung von ausgerichteten Netzwerkstrukturen demonstriert. Der zusätzliche Grad an Ordnung wird für die Untersuchung von optischen Effekten an Silberdraht-Netzwerken genutzt. Weiterhin zeigen diese ausgerichteten Netzwerke eine anisotrope Leitfähigkeit. Dieser Effekt wird diskutiert und Simulationen werden durchgeführt, um die Beobachtungen zu verifizieren. Die Freiheit in der Netzwerkstruktur wird für eine Verbesserung der Leitfähigkeit genutzt.

Having conducted the research described in this thesis I found that there exists a possibility to produce polyelectrolyte nanostructures on hydrophobic surfaces by application of the moving contact line approach. It was demonstrated that the morphology of nanostructures displays a range of structure variations from root-like to a single wire structure with a high anisotropy and aspect ratio (providing diameters of several nanometers and the length limited by the sample surface dimensions). Such nanostructures can be produced exactly on the spot of interest or can be transferred from the surface where they were produced to any other surfaces by the contact printing technique. A model describing the polymer deposition during the moving contact line processes on hydrophobic surfaces has been proposed. The application of this model provides the ground for an explanation of all the obtained experimental data. Utilizing moving contact line approach aligned one-dimensional polycation structures were fabricated and these structures were used as templates for assembling amphiphile molecules. Quasiperiodic aligned and oriented nanostructures of polyelectrolyte molecules formed in moving droplets were utilized for fabrication of electrically conductive one-dimensional nanowires.

The DNA double helix is inherently a nanoscale wire-like object, possessing a 2 nm diameter as well as a remarkable capability for molecular recognition and the interaction with other chemical compounds, thus making it an attractive material for biologically driven assembly of artificial nanostructures. In this work methods for the construction of functional electronic networks from single DNA molecules are presented. For this, (i) the generation of patterns of distinct interconnects between micro-fabricated contact pads are explored by stretching end-specifically thiol-functionalized, single-tethered DNA molecules using hydrodynamic flow as well as an electric field-induced thermal flow. (ii) These networks then serve as a template for a selective in-situ photoinduced nucleation and growth of platinum clusters of 4 nm diameter along the DNA molecules. In the synthesis exclusively platinum ions from an aqueous platinum nitrate solution bonded electrostatically to the backbone of the immobilized DNA can be reduced upon irradiation with UV light, while background metallization is inhibited. Furthermore, the metallization scheme is applied to DNA nanotubes and another photochemical deposition process is used to tune the interparticle gap space in a discontinuous platinum cluster chain to form conducting nanowires. The "process toolbox'' presented in this work offers a versatile alternative for the hierarchical patterning and incorporation of biotemplated nanomaterials into micro-/nanofabrication schemes. / Ein doppelhelikaler DNA-Strang besitzt mit seinem hohen Aspektverhältnis von Natur aus Ähnlichkeit mit einem Kabel. Zusammen mit seinen einzigartigen Selbstassemblierungseigenschaften sowie der Fähigkeit, mit einer Vielzahl von chemischen Stoffen eine Verbindung einzugehen, macht dies ihn zu einem aussichtsreichen Baumaterial für den Aufbau von künstlichen Nanostrukturen. In dieser Arbeit werden deshalb verschiedene Methoden für den Bau von elektronischen Schaltkreisen aus einzelnen DNA-Strängen demonstriert. Dazu wird (i) die Herstellung von Verdrahtungsmustern zwischen lithographisch gefertigten Kontaktstrukturen untersucht. Endständig mit Thiolgruppen funktionalisierte DNA-Moleküle, die an nur einem Ende mit der Oberfläche verknüpft sind, werden mittels Strömung oder eines elektrothermisch induzierten Flusses zwischen Elektroden gespannt. (ii) Diese Netzwerke dienen im Weiteren als Vorlage für ein selektives, lichtinduziertes Wachstum von Platinpartikeln mit Durchmessern von 4 nm lokal entlang der DNA-Moleküle. Dabei werden unter UV-Bestrahlung nur solche Platinionen reduziert, die aus einer Platinnitrat-Lösung elektrostatisch an die immobilisierte DNA angebunden haben. Partikelwachstum in der umgebenden Lösung wird weitgehend verhindert. Darüber hinaus wird dieses Verfahren auch auf DNA-Nanoröhren angewendet und ein weiterer photochemischer Abscheideprozess eingesetzt, um unterbrochene Clusterkettern zusammenzuwachsen, mit dem Ziel, elektrisch leitfähige Nanodrähte zu erhalten. Die vorgestellten Verfahren stellen eine vielseitige Alternative zu herkömmlichen, hierarchischen Fabrikationsschemen der Mikro- und Nanotechnologie dar.

Molybdenum chalcohalide nanowires are systems, which structural, electronic and optical properties have been analyzed in detail. However, their potential as building blocks for electronic devices has not been investigated so far. This question is raised in Dissertation, focusing on unique electronic transport properties of these systems, and comparing them with those of the popular carbon nanotubes.

Les transistors à effet de champ sensibles aux ions (ISFET) sont des composants électroniques conçus pour fonctionner en phase liquide. Pour résumer, ce sont des MOSFET dont la grille métallique est remplacée par une membrane isolante ionosensible. Au début des années 2000, ces composants ont évolué avec l'introduction des premiers dispositifs à base de nanofils de silicium. Grâce à leurs faibles dimensions, ces capteurs ont ouvert de nouvelles perspectives, comme par exemple, l'étude des métabolismes intracellulaires. L'objectif de cette thèse a été de développer et d'étudier un capteur de type ISFET, à base de nanofils de silicium, ayant comme couche sensible l'alumine Al2O3. Les premiers travaux ont porté sur l'intégration de films minces d'alumine Al2O3 dans un procédé de type MOSFET. Ce matériau devant être déposé sur des nanofils de silicium, la technique de dépôt successif de couches moléculaires (Atomic Layer Deposition ALD) a été retenue. Cette méthode offre la possibilité de déposer des films d'épaisseur homogène tout autour des nanofils. Après l'étude de l'ALD-Al2O3, la deuxième grande partie de ce projet a consisté à développer, en utilisant les techniques de la microélectronique, des structures innovantes à base de nanofils de silicium. Des transistors constitués d'un seul nanofil, et d'autres constitués de réseaux parallèles de nanofils ont été réalisés. Ces capteurs ont été intégrés dans des canaux microfluidiques, permettant ainsi de localiser précisément le liquide sur les nanofils, mais aussi de pouvoir travailler en micro/nanovolumes. La dernière partie de ce projet a consisté à caractériser ces capteurs en phase liquide. Les différentes configurations ont montré leurs avantages et inconvénients en termes de transconductance, courants de fuite, pentes sous le seuil, sensibilités au pH et aux ions interférents (Na+ et K+). Les caractérisations se sont avérées excellentes et laissent entrevoir des perspectives intéressantes pour des applications biologiques. Les principales innovations de ces capteurs concernent : l'utilisation de nanofils suspendus, la réalisation d'une gaine isolante ionosensible bicouche SiO2/Al2O3 tout autour des nanofils, la variation du dopage le long des nanofils ce qui a conduit à la réalisation de jonctions N+/P/N+, et l'intégration des capteurs dans des canaux microfluidiques couverts. / Ion-sensitive field effect transistors (ISFET) are electronic components designed to operate in liquid phase. To summarize, they are MOSFET-based devices whose metal gate is replaced by an ionosensitive insulating layer. In the early 2000s, these components evolved with the introduction of the first device based on silicon nanowires. Thanks to their small dimensions, these sensors opened up new perspectives, such as the study of intracellular metabolisms. The aim of this thesis was to develop and study a type of ISFET sensor, based on silicon nanowires, with Al2O3 alumina as sensitive layer. The first part of this work was focused on the integration of thin alumina Al2O3 films in a MOSFET process. This material had to be deposited on silicon nanowires, that is why Atomic Layer Deposition (ALD) was used. This method allows to deposit films with uniform thickness all around nanowires. After the study of ALD-Al2O3, the second major part of this project was to develop innovative structures, based on silicon nanowires, using microelectronics methods. Transistors consisting of a single nanowire, and others consisting of parallel networks of nanowires were fabricated. These sensors were integrated in microfluidic channels, allowing to precisely locate the liquid on nanowires and also to work in micro/nanovolumes. The last part of this project consisted in characterizing these sensors in liquid phase. The different configurations showed their advantages and disadvantages in terms of transconductance, leakage currents, slopes below the threshold, sensitivities to pH and interfering ions (Na+ and K+). The characterizations proved to be excellent and suggest interesting prospects for biological applications. The main innovations of these sensors are: the use of suspended nanowires, the realisation of a bilayer SiO2/Al2O3 ion-sensitive sheath all around the nanowires, the doping variation along the nanowires which led to the realization of N+/P/N+ junctions, and the integration of sensors into covered microfluidic channels.

No description available.

Lead Halide Perovskite is emerging quickly as a promising material for the future solar cellsthanks to their inherent good optoelectrical properties along with their cheap and facile fabri-cation. However, their main drawback before commercialization is their weak stability. In thiswork, a novel carbon-coated perovskite quantum dot has been synthesized, and is to the extentof our knowledge, for the first time. The coated perovskite quantum dots show a remarkable in-creased stability under different conditions while in solution. Their photoluminescence intensityalso increased as time went on, exceeding that of the uncoated perovskite quantum dots aftera few weeks. These coated perovskite quantum dots, while not fully characterized and thusnot fully understood show a promising way on how to combat the low stability in perovskites.Further, Copper/Copper(I)Iodide core/shell nanowires were synthesized as a transparent inte-grated hole transport layer/electrode for solar cells. While limited due to the low controlledfabrication process used, they providing a solid base for further research on the material to beused in solar cells. / Bly-halid perovskite har snabbt utvecklats och visar sig vara ett lovande material till framti-dens solceller tack vare dess optoelektriska egenskaper samt dess billiga och lätta tillverkn-ingsprocess. Dock, så brister materialet på grund av dess dåliga stabilitet innan de kan kommer-sialieras fullt ut. I detta projekt har kol-överdragen perovskite kvantprickar framställts, och ärtill den omfattning vi besitter, för första gången. De coatade perovskite kvantprickarna visade enförvånadsvärd stabilitet under olika tillstånd, och även en ökning i dess photoluminescens efternågra veckor. Dessa kvantprickar, dock ej ännu fullt förstådda och mer karaktärisering krävs, ärett lovande alternativ till att lösa perovskitens låga stabilitet. Vidare har koppar/koppar(I)jodidcore/shell nanotrådar tillverkats som en transparent integrerar håltransport material/elektrodför solceller med goda egenskaper. Trotts sin begränsning i den framställningsprocess som an-vändes ger dem en lovande bas för framtida forskning på materialet.

Integrated circuit development is an industry-driven high-risk high-stakes environment. The time from the concept of a new transistor technology to the market-ready product is measured in decades rather than months or years. This increases the risk for any company endeavouring on the journey of driving a new concept. Additionally to the return on investment being in the far future, it is only to be expected at all in high volume production, increasing the upfront investment. What makes the undertaking worthwhile are the exceptional gains that are to be expected, when the production reaches the market and enables better products. For these reasons, the adoption of new transistor technologies is usually based on small increments with foreseeable impact on the production process. Emerging semiconductor device development must be able to prove its value to its customers, the chip-producing industry, the earlier the better. With this thesis, I provide a new approach for early evaluation of emerging reconfigurable transistors in reconfigurable digital circuits. Reconfigurable transistors are a type of MOSFET that features a controllable conduction polarity, i.e., they can be configured by other input signals to work as PMOS or NMOS devices. Early device and circuit characterisation poses some challenges that are currently largely neglected by the development community. Firstly, to drive transistor development into the right direction, early feedback is necessary, which requires a method that can provide quantitative and qualitative results over a variety of circuit designs and must run mostly automatic. It should also require as little expert knowledge as possible to enable early experimentation on the device and new circuit designs together. Secondly, to actually run early, its device model should need as little data as possible to provide meaningful results. The proposed approach of this thesis tackles both challenges and employs model checking, a formal method, to provide a framework for the automated quantitative and qualitative analysis. It pairs a simple transistor device model with a charge transport model of the electrical network. In this thesis, I establish the notion of transistor-level reconfiguration and show the kinds of reconfigurable standard cell designs the device facilitates. Early investigation resulted in the discovery of certain modes of reconfiguration that the transistor features and their application to design reconfigurable standard cells. Experiments with device parameters and the design of improved combinational circuits that integrate new reconfigurable standard cells further highlight the need for a thorough investigation and quantification of the new devices and newly available standard cells. As their performance improvements are inconclusive when compared to established CMOS technology, a design space exploration of the possible reconfigurable standard cell variants and a context-aware quantitative analysis turns out to be required. I show that a charge transport model of the analogue transistor circuit provides the necessary abstraction, precision and compatibility with an automated analysis. Formalised in a DSL, it enables designers to freely characterise and combine parametrised transistor models, circuit descriptions that are device independent, and re-usable experiment setups that enable the analysis of large families of circuit variants. The language is paired with a design space exploration algorithm that explores all implementation variants of a Boolean function that employs various degrees and modes of reconfiguration. The precision of the device models and circuit performance calculations is validated against state-of-the-art FEM and SPICE simulations of production transistors. Lastly, I show that the exploration and analysis can be done efficiently using two important Boolean functions. The analysis ranges from worst-case measures, like delay, power dissipation and energy consumption to the detection and quantification of output hazards and the verification of the functionality of a circuit implementation. It ends in presenting average performance results that depend on the statistical characterisation of application scenarios. This makes the approach particularly interesting for measures like energy consumption, where average results are more interesting, and for asynchronous circuit designs which highly depend on average delay performance. I perform the quantitative analysis under various input and output load conditions in over 900 fully automated experiments. It shows that the complexity of the results warrants an extension to electronic design automation flows to fully exploit the capabilities of reconfigurable standard cells. The high degree of automation enables a researcher to use as little as a Boolean function of interest, a transistor model and a set of experiment conditions and queries to perform a wide range quantitative analyses and acquire early results.:1 Introduction 1.1 Emerging Reconfigurable Transistor Technology 1.2 Testing and Standard Cell Characterisation 1.3 Research Questions 1.4 Design Space Exploration and Quantitative Analysis 1.5 Contribution 2 Fundamental Reconfigurable Circuits 2.1 Reconfiguration Redefined 2.1.1 Common Understanding of Reconfiguration 2.1.2 Reconfiguration is Computation 2.2 Reconfigurable Transistor 2.2.1 Device geometry 2.2.2 Electrical properties 2.3 Fundamental Circuits 3 Combinational Circuits and Higher-Order Functions 3.1 Programmable Logic Cells 3.1.1 Critical Path Delay Estimation using Logical Effort Method 3.1.2 Multi-Functional Circuits 3.2 Improved Conditional Carry Adder 4 Constructive DSE for Standard Cells Using MC 4.1 Principle Operation of Model Checking 4.1.1 Model Types 4.1.2 Query Types 4.2 Overview and Workflow 4.2.1 Experiment setup 4.2.2 Quantitative Analysis and Results 4.3 Transistor Circuit Model 4.3.1 Direct Logic Network Model 4.3.2 Charge Transport Network Model 4.3.3 Transistor Model 4.3.4 Queries for Quantitative Analysis 4.4 Circuit Variant Generation 4.4.1 Function Expansion 5 Quantitative Analysis of Standard Cells 5.1 Analysis of 3-Input Minority Logic Gate 5.1.1 Circuit Variants 5.1.2 Worst-Case Analysis 5.2 Analysis of 3-Input Exclusive OR Gate 5.2.1 Worst-Case Analysis 5.2.2 Functional Verification 5.2.3 Probabilistic Analysis 6 Conclusion and Future Work 6.1 Future Work A Notational conventions B prism-gen Programming Interfaces Bibliography Terms & Abbreviations