La nanotechnologie a pris un rôle clé dans le développement technologique actuel de façon extrêmement grande et interdisciplinaire. L'utilisation de nanofils dans la construction de structures/dispositifs plus complexe peut être entrevue en raison de sa polyvalence. Comprendre la fabrication de nanofils et être capable de les caractériser est extrêmement important pour ce développement. Des dispositifs à base de nanofils semi-conducteurs et ferromagnétiques ont été étudiés dans cette thèse, abordant les techniques de croissance et d'adressage pour des caractérisations électroniques et structurelles, et pour des développements à grande échelle pour des applications industrielles. Les nanofils de cobalt ont été électro déposés à différents pH permettant d'associer le pH de la solution à la caractérisation de la structure cristalline. Les nanofils de semiconducteurs ont été crus par CVD. L'adressage et l'alignement des nanofils ont été faits par diélectrophorèse couplé avec l'assemblage capillaire. Pour caractériser les nanofils, des techniques de lithographie optique et électronique ont été utilisés pour la fabrication des contacts. Une étude d'interface matériaux semiconducteurs/siliciure a été réalisée démontrant que les valeurs de barrière Schottky sont différentes entre des nanofils de silicium et des matériaux massifs. Dans le cas de nanofils InAs la barrière est imperceptible et il a été constaté que le fil de ZnO était de type p. Les applications ont démontrées différents dispositifs, tels que les transistors, les vannes de spin, capteurs de gaz, de l'humidité et de la lumière. Dans le cadre de vannes de spin, la caractérisation de l'interface semiconducteur/ferromagnétique a permis d'associer la valeur de la hauteur de barrière de Schottky à l'épaisseur de SiO2, qui agit comme une barrière à effet tunnel. Grâce aux mesures de transistors à effet de champ (FET) , nous avons pu identifier le type de porteurs de charge pour chaque matériau, extraire leur mobilité, la tension de seuil... Les capteurs ont été fabriqués à base de nanofils en Si, InAs, et ZnO, afin d'être utilisés comme capteurs de lumière, l'humidité et les gaz. Cette thèse propose une amélioration des technologiques actuelles d'adressage de nanostructures et l'utilisation des propriétés à l'échelle nanométrique pour des dispositifs plus efficaces et une large applicabilité, fournissant la base pour de futures études et les réalisations pratiques des nanosciences et des nanotechnologies. / Nanotechnology is at the center of nowadays technologies in an increasing and very interdisciplinary manner. Sticking together the manufacturing and characterization of the nano-devices and their constituent nanostructures are keys for the development of the field. This thesis covered studies of ferromagnetic (Co) and semiconductors nanowires (Si, InAs and ZnO) based nanodevices. Nanowires growing and correct addressing techniques were studied for measurements and characterizations set ups and for large-scale industrial applications possibilities. The growing techniques were electrodeposition and CVD. Different pHs were used for the solutions in the case of the Co nanowires growing that were, than, connected by means of electronic lithography. The resulting measurements enabled us to associate the pH to the crystalline structure characterization. The nanowires addressing was made using the dieletrophoresis technique coupled to capillary assembly and also by contacting the isolated nanowire by means of electronic lithography. The contact made in the nanowire was favored by the silicidation technique. For this two different materials, Pt and Ni, compatible with the CMOS technology. A deep study of the interface semiconductor/silicidation was performed and the Schottky Barrier of Si nanowires was verified to be smaller than the barrier in the bulk form of Si. In the InAs nanowires case an imperceptible barrier was found. The ZnO nanowires were found to be of p-type. The following devices were manufactured: top/back-gate transistors, lateral spin valves (local and non-local valves) and multilayer-nanowires based spin valves (local valves). The semiconductor nanowires sensors (gas, humidity and luminosity) were also manufactured and tested. In the spin valves context the interface semiconductor/ferromagnetic material was studied in order to associate the Schottky Barrier height to the SiO2 width that acts as a tunnel barrier. From the semiconductors nanowires based field effect transistors (FETs) measurements it was possible to verify the charge carriers type for each different material, to extract its mobility, threshold voltage and others. The manufactured sensors were made of Si, InAs and ZnO nanowires and the main aim was to use them as gas, humidity and luminosity sensors. The ZnO nanowires have been seen to be light sensitive whereas the Si and InAs nanowires responded to the presence of humidity and of pollutant gases, e.g. the NO2.

As modern microelectronics advances, enormous challenges have to be overcome in order to further increase device performance, enabling highspeed and ultra-low-power applications. With progressive scaling of Silicon MOSFETs, charge carrier mobility has dropped significantly and became a critical device parameter over the last decade. Present technology nodes make use of strain engineering to partially recover this mobility loss. Even though carrier mobility is a crucial parameter for present technology nodes, it cannot be determined accurately by methods typically available in industrial environments. A major objective of this work is to study the magnetoresistance mobility μMR of strained VLSI devices based on a 28 nm ground rule. This technique allows for a more direct access to charge carrier mobility, compared to conventional current/ voltage and capacitance/ voltage mobility derivation methods like the effective mobility μeff, in which series resistance, inversion charge density and effective channel length are necessary to extract the mobility values of the short channel devices. Aside from providing an anchor for accurate μeff measurements in linear operation conditions, μMR opens the possibility to investigate the saturation region of the device, which cannot be accessed by μeff. Electron and hole mobility of nFET and pFET devices with various gate lengths are studied from linear to saturation region. In addition, the interplay between mobility enhancement due to strain improvement, and mobility degradation due to short channel effects with decreasing channel length is analyzed. As a concept device for future nanoelectronic building blocks, silicon nanowire Schottky field-effect transistors are investigated in the second part of this work. These devices exhibit an ambipolar behaviour, which gives the opportunity to measure both electron and hole transport on a single device. The temperature dependence of the source/drain current for specific gate and drain voltages is analyzed within the framework of voltage dependent effective barrier heights.:1. Einleitung 2. Theoretische Grundlagen 3. Charakterisierungsmethoden 4. Messaufbau 5. Ergebnisse der Untersuchungen an MOSFETs 6. Ergebnisse der Untersuchungen an SiNW Transistoren 7. Zusammenfassung Anhang Danksagungen

Single-crystalline nanostructures often exhibit gradients of surface (and/or interface) curvature that emerge from fabrication and growth processes or from thermal fluctuations. Thus, the system-inherent capillary force can initiate morphological transformations during further processing steps or during operation at elevated temperature. Therefore and because of the ongoing miniaturization of functional structures which causes a general rise in surface-to-volume ratios, solid-state capillary phenomena will become increasingly important: On the one hand diffusion-mediated capillary processes can be of practical use in view of non-conventional nanostructure fabrication methods based on self-organization mechanisms, on the other hand they can destroy the integrity of nanostructures which can go along with the failure of functionality. Additionally, capillarity-induced shape transformations are effected and can thereby be controlled by applied fields and forces (guided or driven evolution). With these prospects and challenges at hand, formation and shape transformation of single-crystalline nanostructures due to the system-inherent capillary force in combination with external fields or forces are investigated in the frame of this dissertation by means of atomistic computer simulations. For the exploration (search, description, and prediction) of reaction pathways of nanostructure shape transformations, kinetic Monte Carlo (KMC) simulations are the method of choice. Since the employed KMC code is founded on a cellular automaton principle, the spatio-temporal development of lattice-based N-particle systems (N up to several million) can be followed for time spans of several orders of magnitude, while considering local phenomena due to atomic-scale effects like diffusion, nucleation, dissociation, or ballistic displacements. In this work, the main emphasis is put on nanostructures which have a cylindrical geometry, for example, nanowires (NWs), nanorods, nanotubes etc.

In this project, the fabrication of single-photon detectors based on superconducting nanowires is presented, with great focus on extending their operation range to the mid infrared. In particular, Niobium Titanium Nitride (NbTiN) and Molybdenum Silicide (MoSi), superconducting materials with different properties, are presented, studied and used as fabrication platforms. Different approaches are followed, mainly adjusting the nanowire width and thickness to achieve near unity quantum efficiency at mid infrared wavelengths. With the vision of using these devices for atmospheric LIDAR and sensing experiments, saturation at 2050 nm is studied that corresponds to the absorption peak of CO2. For the best device made on NbTiN thin films, unity quantum efficiency is shown at 2050 nm with a time jitter of 116 ps at 1550 nm. Simulations using the transfer matrix method and the commercial software Lumerical are carried out, concluding that the devices made in NbTiN could have 23.1-26.7% system detection efficiency at 2050 nm on a Silicon SiO2/Si platform. Further improvements show that the detection efficiency could reach between 52-62% (for 0.33 and 0.5 fill factor, respectively calculated with FDTD simulations) by engineering optical cavities. / I detta projekt presenteras en fabrikations process för enstaka foton detektorer baserade på supraledande nanotrådar. Fokuset har legat på att utöka våglängds regionen där detektorernas kan detektera till mid-infrarött ljus. Två specifika supraledande material, Niobium Titan (NbTiN) och Molybdenum Silicide (MoSi), med olika egenskaper har studerats och använts som material. Dimensionerna på nanotrådarna, framför allt tjockleken och bredden, har optimerats för att uppnå nära enhetlig kvant-effektivitet vid mid-infraröda våglängder. Med visionen att detektorerna ska användas för atmosfäriska LiDAR mätningar har de studerats för satruering vid 2050 nm som motsvarar ett absorbtions maximum för CO2. Detektorerna tillverkade med NbTinN uppnådde 100% kvant effektivitet för 2050 nm ljus med ett tids jitter på 116 ps vid 1550 nm ljus. Simuleringar med överförings matrisen metoden och den kommersiella mjukvaran Lumerical visar att NbTiN detektorer placerade på en SiO2/Si platform kan ha en 23.1-26.7% effektivitet vid 2050 nm. Ytterligare simuleringas visar att effektiviteten kan nå upp till 52-62% (för 0.33 och 0.5 fyllnadsfaktor, respektive beräknad med FDTD) genom att inkludera optiska kaviteter.

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This work examines the selective deposition of metallic and semiconductor materials onto DNA templates for the fabrication of nanodevices. DNA origami provides a simple and robust method for folding DNA into a variety of shapes and patterns and makes it possible to create the complex templates needed for nanodevices, such as nanoelectronic circuits, plasmonics, and nanosensors. Metallization of DNA origami templates is essential for the fabrication of such nanodevices. In addition, selective deposition of semiconductor materials onto the DNA template is of importance for making many nanodevices such as nanocircuits. Metallization of DNA origami presents several challenges beyond those associated with the metallization of other DNA templates such as λ-DNA. All of these challenges were addressed in this study. DNA origami templates were seeded with Ag and then plated with Au via electroless deposition. Selective continuous metal deposition was achieved, with an average metallized height as small as 32 nm. The structure of T-shaped DNA origami was also retained after metallization. Following the metallization of complete origami, site-specific metallization of branched DNA origami was also demonstrated. To achieve this, staple strands at select locations on origami were replaced with staple strands modified with binding sites at the end. These binding sites then attached to thiolated DNA coated Au nanoparticles through base pairing. The continuous Au nanowires formed at designated sites on DNA origami after Au plating had an average width of 33 nm, with the smallest ones ~20 nm wide. The continuity of nanowires was verified by conductivity tests- the only tests of this nature of which I am aware. Moreover, predesigned sites on "circuit-shaped" DNA origami were successfully metallized. The selective deposition of a variety of materials onto DNA templates for the formation of continuous DNA-templated nanowires was also demonstrated. Specifically, an electroless Ni plating solution was developed to enable the fabrication of uniform and continuous DNA-templated Ni nanowires. Tests showed that these DNA-templated Ni nanowires were conductive. Moreover, continuous DNA-templated Bi2Te3 and/or Te nanowires have been fabricated through galvanic displacement of DNA-templated Ni and Cu nanowires. Altogether, these results represent important progress toward the realization of DNA-templated nanofabrication.

Superconducting nanowire single-photon detectors are the most promising technology in quantum photon information. They offer high speed, high detection efficiency, low dark count rate as well as low timing jitter compared to other single photon detection solutions. Since the recent advances in photonic quantum computing, the drive for improvement of the implementation complexity, performance and scalability of quantum photon detection has increased. This presents challenges with the current device readout schemes and alternative solutions are required. One of the key parameters to improve the scalability of superconducting nanowire single-photon detectors, is reducing the power dissipation per pixel. This is especially important in cryogenic readouts, where the performance of electronic components changes compared to room temperature. Moreover, the performance of a cryogenic superconducting nanowire single-photon detector readout is dependent both on the device and readout electronics level characteristics, and both must be fine-tuned for desired performance. A solution to the scalability of superconducting nanowire single-photon detectors (SNSPDs) is the development of a readout scheme with minimized power dissipation. We propose a fully digital readout scheme interfaced with a superconducting nanowire single-photon detector (SNSPD), that allows photon detection and reset. For this purpose, a digital single-pixel SiGe Bi-CMOS readout is designed, simulated, and characterised. An improved readout scheme is proposed with an addition of a die resistor to allow a full reset of the detector. / Supraledande nanotrådsdetektorer baserade på enstaka fotoner är ett av de mest avancerade koncepten inom kvantfotoninformationsteknik. Syftet med att utveckla denna teknik är att förbättra egenskaper så som komplexiteten, prestandan och skalbarheten. En av de viktigaste parametrarna för att förbättra skalbarheten hos supraledande nanotrådsdetektorer med enstaka fotoner är att minska energiförbrukningen per pixel. Detta är särskilt viktigt i kryogena avläsningar, där prestandan hos elektroniska komponenter förändras jämfört med rumstemperatur. Dessutom, beror prestandan hos en kryogen supraledande nanotrådsdetektor både på komponenten och på avläsningselektroniken,och båda måste finjusteras för att uppnå önskad prestanda. En lösning på kalbarheten för supraledande nanotrådsdetektorer med enstaka fotoner (SNSPDs) är att realisera avläsning med minimerad effektförlust. Vi föreslår en helt digital avläsning som är kopplad till en supraledande enfoton nanotrådsdetektor (SNSPD), som gör det möjligt att detektera fotoner och att återställa detektorn efter avläsning. För detta ändamål, designades, simuleras och karakteriserades en digital avläsningkrets med en enda pixel. Ett förbättrat avläsningssystem föreslås genom att lägga till ett diskret motstånd för att möjliggöra en fullständig återställning av detektorn.

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