<div>In this work, we investigate the trade-off between scalability and reliability for next generation logic-transistors i.e. Gate-All-Around (GAA)-FET, Multi-Bridge-Channel (MBC)-FET. First, we analyze the electronic properties (i.e. bandgap and</div><div>quantum conductance) of ultra-thin silicon (Si) channel i.e. nano-wire and nano-sheet based on first principle simulation. In addition, we study the influence of interface</div><div>states (or dangling bonds) at Si-SiO₂ interface. Second, we investigate the impact of bandgap change and interface states on GAA-FETs and MBC-FETs characteristics by</div><div>employing Non-equilibrium Green's Function based device simulation. In addition to that, we calculate the activation energy of Si-H bond dissociation at Si-SiO₂ interface for different Si nano-wire/sheet thickness and different oxide electric-field. Utilizing these thickness dependent activation energies for corresponding oxide electric-field, in conjunction with reaction-diffusion model, we compute the characteristics shift and analyze the negative bias temperature instability in GAA-FET and MBC-FET. Based on our analysis, we estimate the operational voltage of these transistors for a life-time of 10 years and the ON current of the device at iso-OFF-current condition. For example, for channel length of 5 nm and thickness < 5 nm the safe operating voltage needs to be < 0.55V. Furthermore, our analysis suggests that the benefit of Si thickness scaling can potentially be suppressed for obtaining a desired life-time of GAA-FET and MBC-FET.</div>

<p>Controlling the surface chemistry of 2D materials is critical for the development of next generation applications including nanoelectronics and organic photovoltaics (OPVs). Further, next generation nanoelectronics devices require very specific 2D patterns of conductors and insulators with prescribed connectivity and repeating patterns less than 10 nm. However, both top-down and bottom-up approaches currently used lack the ability to pattern materials with sub 10-nm precision over large scales. Nevertheless, a class of monolayer chemistry offers a way to solve this problem through controlled long-range ordering with superior sub-10 nm patterning resolution. Graphene is most often functionalized noncovalently, which preserves most of its intrinsic properties (<i>i.e.,</i> electronic conductivity) and allows spatial modulation of the surface. Phospholipids such as 1,2-bis(10,12-tricsadiynoyl)-<i>sn­</i>-glycero-3-phosphoethanolamine (diyne PE) form lying down lamellar phases on graphene where both the hydrophilic head and hydrophobic tail are exposed to the interface and resemble a repeating cross section of the cell membrane. Phospholipid is made up of a complex headgroup structure and strong headgroup dipole which allows for a diverse range of chemistry and docking of objects to occur at the nonpolar membrane, these principals are equally as important at the nonpolar interface of 2D materials. A key component in the development of nanoelectronics is the integration of inorganic nanocrystals such as nanowires into materials at the wafer scale. Nanocrystals can be integrated into materials through templated growth on to surface of interest as well as through assembly processes (i.e. interfacial adsorption). </p> <p>In this work, I have demonstrated that gold nanowires (AuNWs) can be templated on striped phospholipid monolayers, which have an orientable headgroup dipoles that can order and straighten flexible 2-nm diameter AuNWs with wire lengths of ~1 µm. While AuNWs in solution experience bundling effects due to depletion attraction interactions, wires adsorb to the surface in a well separated fashion with wire-wire distances (e.g. 14 or 21 nm) matching multiples of the PE template pitch. This suggests repulsive interactions between wires upon interaction with dipole arrays on the surface. Although the reaction and templating of AuNWs is completed in a nonpolar environment (cyclohexane), the ordering of wires varies based on the hydration of the PE template in the presence of excess oleylamine, which forms hemicylindrical micelles around the hydrated headgroups protecting the polar environment. Results suggest that PE template experience membrane-mimetic dipole orientation behaviors, which in turn influences the orientation and ordering of objects in a nonpolar environment.</p> <p>Another promising material for bottom-up device applications is MoS₂substrates due to their useful electronic properties. However, being able to control the surface chemistry of different materials, like MoS₂, is relatively understudied, resulting in very limited examples of MoS₂substrates used in bottom-up approaches for nanoelectronics devices. Diyne PE templates adsorb on to MoS₂­in an edge-on conformation in which the alkyl tails stack on top of each other increasing the overall stability of the monolayer. A decrease in lateral spacing results in high local concentrations of orientable headgroups dipoles along with stacked tails which could affect the interactions and adsorption of inorganic materials (i.e. AuNW) at the interface. </p> <p>Here, I show that both diyne PE/HOPG and diyne PE/MoS₂ substrates can template AuNW of various lengths with long range ordering over areas up to 100 µm². Wires on both substrates experience repulsive interactions upon contact with the headgroup dipole arrays resulting in wire-wire distances greater than the template pitch (7 nm). As the wire length is shortened the measured distance between wires become smaller eventually resulting in tight packed ribbon phases. Wires within these ribbon phases have wire-wire distances equal to the template. Ribbon phases occur on diyne PE/HOPG substrates when the wire length is ~50 nm, whereas wire below ~600 nm produce ribbon phases on diyne PE/MoS_2­substrates. </p> <p>Another important aspect to future scientific development is the catalysis of organic reactions, specifically oxygenation of organic sulfides. Sulfide oxygenation is important for applications such as medicinal chemistry, petroleum desulfurization, and nerve agent detoxification. Both reaction rates and the use of inexpensive oxidants and catalysts are important for practical applications. Hydrogen peroxide and <i>tert</i>-butyl hydroperoxide are ideal oxidants due to being cost efficient and environmentally friendly. Hydrogen peroxide can be activated through transition metal base homogeneous catalysts. Some of the most common catalysts are homo- and hetero-polyoxometalates (POMs) due their chemical robustness. Heptamolybdate [Mo₇O₂₄]^6-is a member of the isopolymolybdate family and its ammonium salt is commercially available and low in cost.²² Heteropolyoxometalates have been widely studied as a catalyst for oxygenation reactions whereas heptamolybdate has been rarely studied in oxygenation reactions. </p> <p> Here I report sulfide oxygenation activity of both heptamolybdate and its peroxo derivate [Mo₇O₂₂(O₂)₂]^6-. Sulfide oxygenation of methyl phenyl sulfide (MPS) by H₂O₂to sulfoxide and sulfone occurs rapidly with 100 % utility of H₂O₂ in the presence of [Mo₇O₂₂(O₂)₂]^6-, suggesting the peroxo adduct is an efficient catalyst. However, heptamolybdate is a faster catalyst compared to [Mo₇O₂₂(O₂)₂]^6- for MPS oxygenation and all other sulfides tested under identical conditions. Pseudo-first order <i>k</i>_cat constants from initial rate kinetics show that [Mo₇O₂₄]^6-catalyzes sulfide oxygenation faster. The significant difference in the <i>k</i>_cat suggests differences in the active catalytic species, which was characterized by both UV-Vis and electrospray ionization mass spectrometry. ESI-MS suggest that the active intermediate of [Mo₇O₂₄]^6-under catalytic reaction conditions for sulfide oxygenation by H₂O₂ is [Mo₂O₁₁]^2-. These results show that heptamolybdate is a highly efficient catalyst for H₂O₂oxygenation of organic sulfides.</p>

Silicon Nanowire based Reconfigurable Field Effect Transistor (SiNW RFET) presents a solution to increase the system functionality beyond the limits of classical CMOS scaling in More-than-Moore era of semiconductor technology. They are not only spatially reconfigurable, i.e., the source and the drain can be interchangeable in design, but in such devices one can also control the primary charge carrier by controlling the voltage in the control gate. The two key morphological factors controlling reconfigurability are the structure and composition of the Schottky junctions, which serve as the location for Program and Control gates and radial strain induced by the self-limiting oxidation, which influences the carrier mobility resulting in symmetric p and n characteristic curves of an RFET. Despite its potential, in-depth nanoscale studies on the structural and compositional characterization of the key features controlling the reconfigurability are limited and thereby presents as a novel area of research. In this study, the composition and morphology of the Schottky junction and the radial strain profile due to self-limiting oxidation were studied using advanced imaging and sample preparation techniques like Transmission Electron Microscope (TEM) and Scanning Electron Microscope (SEM) imaging alongside with precise sample preparation methods like Focused Ion Beam (FIB) liftout techniques. For analysis of radial strain in nanowires that underwent self-limiting oxidation, a TEM lamella was taken of a cross-section of the NW. The lamella was kept at 200 nm thickness to preserve the strain state of the nanowire cross-section. It was observed that nanowires undergoing such oxidation have an omega (Ω) shaped oxide shell where the shell was discontinued at the spot where the nanowire was touching the substrate. Fast Fourier transform of the high-resolution image of such a NW crossection was used to calculate the strain profile. The strain is also found to be not radially uniform for such Ω shaped oxide shells. The strain profile shows a local maxima near the nanowire base where it touches the substrate then a minima approximately at the geometric center followed by the maximum strain at the area adjacent to the oxide shell thereby showing a sinusoidal profile. Theoretical simulations performed by Dr. Tim Baldauf further verified the nature of the sinusoidal strain that was observed experimentally. Similar simulations were done for different omega shell shapes, which yielded strain plots of similar sinusoidal strain plots, with the local maxima depending on the level of encapsulation of the NW by the shell. In the characterization of the Schottky junction, a TEM lamella was taken along the longitudinal direction of a nanowire, which was silicidized from both ends, similar to ones used in SiNW RFET devices. High resolution TEM micrographs and EDX (Energy dispersive X-Ray Spectroscopy) in the TEM along the Schottky junction showed a Ni rich phase and pure Si on either side of the junction. This participating phase was identified as NiSi2. However, the transition between the phases shows a gradient and in-situ experiments were designed to verify the sharpness of the junction. In in-situ silicidation experiments, Si nanowires with a thin native oxide shell were distributed on an electron transparent surface and were partially covered with Ni islands by shadow sputtering. The whole setup was then heated in a heating stage of a TEM and the Ni was allowed to disperse within the Si nanowires forming NiSi2. HRTEM (High Resolution TEM), EDX and EELS (Electron Energy Loss Spectroscopy) studies were performed on the silicidized samples for further ex-situ analysis. During the in-situ experiment, it was observed that Ni-phase interface is atomistically sharp and seldom progresses perpendicularly to the nanowire’s direction but through the closed packed planes of the NW. The interface velocity at different temperatures was used to calculate the activation energy of the silicidation process. The value of the activation energy indicates the Ni undergoing volume diffusion through the Ni-rich phase. The velocity of the interface was observed to be much higher in nanowires with smaller diameters than those with higher diameters, further proving the hypothesis. During the in-situ experiments, in around 10% of nanowires that underwent complete silicidation and held isothermally, the crystalline silicide phase was observed to partially or fully diffuse out of the nanowire core, leaving only a thin shell of Silicon oxide forming ultra-thin walled SiO2 nanotubes (NT). The onset and the time required for completion of the process varies in the nanowires depending on size of the nanowire, the distance and contact to the nearest Ni islands and presence of defects such as kinks and twists within the nanowire. In order to study the dynamics of the process, the velocity of the receding front was calculated for nanowires of two different diameters. They are found to be identical, indicating the volume flow rate of the process is directly proportional to the cross-sectional area. The voids were formed by the reduced diffusivity of Ni in Ni2Si phase in comparison to phases with lower percent of Ni. This indicates that the reason behind the phenomenon is coalition of Kirkendall voids and thus dependent on volume diffusion. From this study, it can be concluded that the extent of self-limiting oxidation and shape of the shell can influence the radial strain state. This can be used to manipulate the strain to tailor the electron and hole transfer characteristics within the RFET. A variety of factors including temperature, time, orientation and radius of the nanowires has been studied with respect to silicidation of a SiNW. The calculated activation energy can be used for precise process control over the location and morphology of Schottky junction. Although not directly related to SiNW RFET devices, the self-assembly of ultra-thin-walled SiO2 NT is a novel research area in itself, the findings of which can be applied in to design novel electronics and sensors.:TABLE OF CONTENTS Preface List of Abbreviations CHAPTER 1: Introduction and Motivation 1.1 Definition and History 1.2 Synthesis Routes 1.3 Properties and Applications 1.4 Nanoscale Electronics and Role of Si Nws 1.4.1 1.4.2 SiNW Reconfigurable Field Effect Transistor 1.5 Introduction to The Topic of The Thesis 1.6 Outline of The Thesis CHAPTER 2: Physical Basics and Previous Research: A Short Summary 2.1 Strain Measurement and Effects of Strain on on Nanoelectronics 2.1.1 Strain Analysis in Planar CMOS Structures 2.2 Silicidation and Schottky Junction 2.2.1 In-situ Silicidation 2.2.2 Silicon oxide nanotubes CHAPTER 3: Background of Instruments and Experimental Set-up 3.1 Scanning Electron Microscope 3.2 Transmission Electron Microscope 3.2.1 Imaging Techniques 3.2.2 TEM sample preparation 3.3 Focused Ion Beam CHAPTER 4: Strain in Nanowire 4.1 Goal of This Study 4.2 Strain in SiNW RFET Devices 4.3 Strain Analysis in SiNW Cross-section 4.3.1 Sample Preparation 4.3.2 Experimental Process 4.3.3 Results and Discussion 4.4 Conclusions CHAPTER 5: Schottky Junction 5.1 Crystallographic Data on Nickel Silicides 5.2 Formation of Silicides in 2-D Structures 5.2.1 Sample History 5.2.2 Sample Preparation 5.2.3 Results and Discussion 5.3 Formation of Silicides in 1-D Structures: Schottky Junction in NWs 5.3.1 Sample History 5.3.2 Sample Preparation 5.3.3 Results and Discussion 5.3.4 Shortcomings of The Lift-out Technique 5.4 In-situ Silicidation 5.4.1 Motivation 5.4.2 Sample Preparation 5.4.3 Experimental Procedure 5.4.4 Results and Discussions 5.4.5 Shortcoming of The Experiment 5.5 Self-assembling SiO2 Nanotubes 5.5.1 Sample Preparation 5.5.2 Experimental Process 5.5.3 Results and Discussion . 5.5.4 Post In-situ Experiment TEM Analysis 5.5.5 Conclusions CHAPTER 6: Conclusions and Outlook 6.1 Strain Analysis 6.2 Schottky Junction Studies Bibliography Acknowledgements

This thesis is dealing with application of Correlative Probe and Electron Microscopy. All measurements were carried out by atomic force microscope LiteScope which is designed especially to be combined with electron microscopes. Advantages of Correlative AFM/SEM Microscopy are demonstrated on selected samples from field of nanotechnology and material science. Application of the correlative imaging was proposed and then realized particularly in case of low-dimensional structures and thin films. Further, this thesis deals with the possibility of combining Correlative AFM/SEM Microscopy with other integrated techniques of an electron microscope such as Focused Ion Beam and Energy Dispersive X-rays Spectroscopy.

Tato práce se zabývá vývojem platforem na bázi křemíkového substrátu pro selektivní integraci polovodivých nanostruktur oxidu kovu (MOX) a jejich použití v perspektivních mobilních zařízeních jako vysoce citlivé a selektivní prvky pro detekci analytů plynů. Polovodičové nanostruktury MOX, například nanodráty, prokázaly lepší schopnosti pro snímání plynů včetně citlivosti, stability a do jisté míry také selektivity, ve srovnání s jejich protějšky na bázi vrstev. Rovněž použití jednoho (nebo několika) nanodrátů zapojených paralelně se ukázalo jako ideální architektura pro dosažení dobře definovaného vodivého kanálu snadno modulovatelného interakcemi na přechodu plynná-pevná látka. Dosavadní způsoby integrace struktur na bázi jednoho nanodrátu do funkčních zařízení však stále představují technologickou výzvu, protože většina metod vyžaduje asistenci technik, jako je soustředěný iontový paprsek (FIB), který omezuje škálovatelnost a zvyšuje náklady a čas výroby. V této souvislosti je práce zaměřena na optimalizaci technologických procesů pro výrobu systémů založených na elektrodových polích s jedním polovodivým nanodrátem. V této práci byly vyvinuty tři verze elektrodových platforem pro selektivní integraci jednoho nanodrátu z MOX materiálu citlivého na plyn. Jako klíčové technologie výroby byly použity nejmodernější vícestupňové výrobní postupy a litografie s využitím elektronového paprsku (nanofabrikace), které umožňují vývoj elektrodových polí s přímými nanoelektrodami, ale i dalších funkčních nanostruktur. Výsledky demonstrují výrobu elektrodové platformy s přímými nanoelektrodami (šířky 100–300 nm), na kterých se nachází úzká dielektrická okna s šířkou blízké průměru nanodrátu (přibližně 100–200 nm). Tyto nanoelektrody byly použity jako mechanická podpora pro zarovnání jednoho nanodrátu a rovněž jako elektrické kontakty pro měření elektrické změny nanodrátu během detekování plynu. Výsledky také zahrnují optimalizaci technik pro odstraňování a opětovné nanášení nanodrátů pro dosažení jedno nanodrátových propojení v poli paralelních elektrod pomocí střídavého elektrického pole jako jednoduché a účinné metody pro zarovnávání nanodrátů (dielektroforéza). Ověření těchto systémů vůči různým plynným látkám (oxidačním a redukčním plynům) bylo provedeno za použití nefunkcionalizovaných a Pt-funkcionalizovaných WO3 nanodrátů syntetizovaných pomocí aerosolové chemické depozice par (AACVD) a topného prvku na bázi tlusté vrstvy na korundové keramice (s provozní teplotou 250 °C), sestaveného spolu s elektrodovou platformou na pouzdru TO-8. Snímací vlastnosti takových systémů vykazovaly lepší citlivost v odporovém režimu na oxid dusičitý (NO2) a ethanol (EtOH) než jejich protějšky využívající nanodrátových filmů. Poslední verze systému pro snímání plynu vyvinutého v této práci (popsaná jako třetí generace čipů) obsahuje třetí izolovanou elektrodu zabudovanou (utopenou) pod citlivým nanodrátem pro zvýšení detekční schopnosti snímání plynu. Testy odezvy na vodík (H2) a oxid dusičitý (NO2) potvrdily zvýšenou funkčnost tohoto systému modulující odezvu senzoru pomocí externího elektrického napětí na utopené elektrodě.

Superconducting single-photon detectors (SSPDs) are the leading detectors in terms of high-speed single-photon counting and high detection efficiency (DE). One factor that limits the DE is the critical current Ic, which is the maximum current before the superconductor switches to the normal state. Increasing device’s bias current towards the Ic can improve the DE. However, the device’s Ic is reduced due to constriction and current crowding at the edges of the wire. Typically, this is caused by fabrication defects. Locally suppressing superconductivity at these defects can potentially lessen the occurrence of current crowding. In this thesis, we used the beam from the helium ion microscope (HIM) and measured the Ic to observe the effects of locally irradiating specific areas on a SSPD wire. Due to the HIM’s small spot size and high collimation, we can control the superconducting gap precisely at the center and edges of the wire. Suppressing the edges can potentially reduce current crowding and increase the device’s critical current while suppressing the center can improve detection sensitivity for photons incident at that location. Our results showed that the irradiated devices had reduced Ic compared to unirradiated devices for both cases. We then extend this method of local suppression of superconductivity to explore an alternative method of fabricating SSPDs by directly writing the device on the superconducting thin film. This can enable the fabrication of devices without the use of lithography resist. In our experiment, we fabricated a 3 μm wire using optical lithography that was disconnected at the center and connected it by writing a single 1 μm wire with the He+ ion beam. We measured the Ic for samples with and without the 1 μm wire pattern and observed that the Ic decreased as we increased the ion dose. Overall, this work aims to contribute to the continuing investigation of the detection mechanism for SSPDs and the improvement of nanofabrication methods using the HIM.

The thesis deals with magnetic force microscopy of soft magnetic nanostructures, mainly NiFe nanowires and thin-film elements such as discs. The thesis covers almost all aspects related to this technique - i.e. from preparation of magnetic probes and magnetic nanowires, through the measurement itself to micromagnetic simulations of the investigated samples. We observed the cores of magnetic vortices, tiny objects, both with commercial and our home-coated probes. Even domain walls in nanowires 50 nm in diameter were captured with this technique. We prepared functional probes with various magnetic coatings: hard magnetic Co, CoCr and soft NiFe. Hard probes give better signal, whereas the soft ones are more suitable for the measurement of soft magnetic structures as they do not influence significantly the imaged sample. Our probes are at least comparable with the standard commercial probes. The simulations are in most cases in a good agreement with the measurement and the theory. Further, we present our preliminary results of the probe-sample interaction modelling, which can be exploited for the simulation of magnetic force microscopy image even in the case of probe induced perturbations of the sample.

Nanostrukturen haben in den letzten Jahrzehnten durch konsequente Förderung wie der im Jahr 2000 gestarteten National Nanotechnology Initiative der USA oder des deutschen Pendants Aktionsplan Nanotechnologie erhebliches Aufsehen, nicht nur in der Wissenschaft, sondern auch in der technischen und wirtschaftlichen Umsetzung erfahren. In Kombination mit biologischen Systemen, deren Funktionalität sich auf der Größenordnung von Nanometern abspielt, finden nanotechnologische Entwicklungen auf dem Gebiet der Medizin ein großes technisches Anwendungsgebiet. Diese Arbeit widmet sich der Untersuchung und technischen Entwicklung von Siliziumnanodrähten als Sensoren für zukünftige medizinische Anwendungen. Im Gegensatz zu Sensoren die auf dotierten Nanodrähten basieren, wurden hier undotierte Nanodrähte untersucht, die mit geringerem Produktionsaufwand auskommen und mittels Schottky-Barrieren als Feldeffekttransistoren nutzbar sind. Deren Eigenschaften wurden im Hinblick auf pH und Biosensorik theoretisch und experimentell untersucht, sowie technisch in ein lab-on-chip sowie ein kompaktes Multiplexer-Messgerät integriert. In einem zweiten, separaten Teil wurden die Eigenschaften undotierter Nanodrähte für die optische Spektroskopie theoretisch modelliert. Die Inhalte beider Teile werden im folgenden kurz zusammengefasst. Um die elektrischen Sensoreigenschaften der Siliziumnanodrähte zu untersuchen, wurden zunächst Computermodelle der Drähte erstellt, mit deren Hilfe der Elektronentransport in flüssiger Umgebung quantenmechanisch modelliert wurde. Die dafür erstellten Modellvorstellungen waren für die sich daran anschließenden experimentellen Untersuchungen des Rauschverhaltens, der pH-Sensitivität sowie der Biosensoreigenschaften sehr vorteilhaft. Mit Hilfe einer neu entwickelten Messmethode konnte der optimale Arbeitspunkt der Sensoren ermittelt werden, sowie die hohe Sensorqualität mittels einer empirischen mathematischen Beschreibung des zu erwartenden Sensorsignals eingeordnet werden. Weiterhin wurden für die Medizintechnik relevante Messungen von Thrombin durchgeführt. Damit ist für den hier beschriebenen Sensortyp ein proof-of-concept für neuartige medizinische Messelemente gelungen. Um die kleinen Abmessungen der Sensoren darüber hinaus technisch nutzbar zu machen, wurden sie in ein lab-on-chip System integriert, in welchem sie als Sensoren für den pH-Wert sowie die ionische Konzentration in Nanoliter-Tropfen verwendet wurden. Desweiteren wurde in Kooperation mit dem Institut für Aufbau- und Verbindungstechnik ein portables Messgerät entwickelt, welches die parallele Messung mehrerer Nanodrahtsensoren ermöglicht. Im zweiten Teil der Arbeit wird eine theoretische Untersuchung zur Eignung von Silizium-Nanodrähten als Messsonden (Probes) für die optische Spektroskopie vorgestellt. Dazu wurde eine Methode entwickelt mittels derer es möglich ist, Raman und Infrarotspektren von Nanostrukturen mittels Molekulardynamik zu berechnen. Die Methode wurde auf undotierte Silizium-Nanodrähte augewendet und zeigt, dass die Oberflächenbeschaffenheit der Drähte die optischen Spektren entscheidend beeinflusst. Damit konnte die Relevanz von Halbeiter-Nanostrukturen auch für Anwendungen in der optischen Spektroskopie gezeigt werden.:I Introduction: Sensing with Nanostructures 1 Introduction 2 Field effect transistors as electronic sensor elements 3 Packaging: Connecting Nano and Macro 4 Nanostructures as transducers in optical spectroscopy II Electronic sensing with Schottky Barrier silicon nanowires 5 Schottky-Barrier silicon nanowire field effect transistors 6 ISFET measurement principles 7 pH and Biosensing with silicon nanowires 8 Thrombin sensing 9 Silicon nanowire FETs in a Lab-on-a-Chip device 10 Multiplexer sensing platform 11 Experimental methods III Simulating optical spectra of silicon nanowires 12 Theoretical fundamentals 13 Computational Methods 14 Results 15 Bibliography 16 Anhang / Nanostructures have attracted great attention not only in scientific research, but also in engineering applications during the last decades. Especially in combination with biological systems, whose complex function is controlled from nanoscale building blocks, nanotechnological developments find a huge field of applications in the medical sector. This work is dedicated to the functional understanding and technical implementation of silicon nanowires for future medical sensor applications. In contrast to doped silicon nanowire based sensors, this work is focussed on pure, undoped silicon nanowires, which have lower demands on production techniques and use Schottky-barriers as electric field detectors. The pH and biosensing capabilities of such undoped silicon nanowire field effect transistors were investigated theoretically and experimentally and further integrated in a lab-on-a-chip device as well as a small-scale multiplexer measurement device. In a second separate part, the optical sensing properties of undoped silicon nanowires were theoretically modeled. The main contents of both parts are shortly described in the following paragraphs. A multiscale model of silicon nanowire FETs to describe the charge transport in liquid surrounding in a quantum mechanical framework was developed to investigate the sensing properties of the nanowire sensors in general. The model set the basis for the understanding of the subsequent experimental investigations of noise characterization, pH sensitivity and biosensing properties. With the help of a novel gate sweeping measurement method the optimal working point of the sensors was determined and the high sensor quality could be quantified in terms of an empirical mathematical model. The sensor was then used for measurements of medically relevant concentrations of the Thrombin protein, providing a proof-of-concept for medical applications for our newly developed sensor. In order to exploit the small size of our sensors for technical applications we integrated the devices in lab-on-a-chip system with a microfluidic droplet generation module. There they were used to measure the pH and ionic concentration of droplets. Finally a portable multiplex measurement device for silicon nanowire sensors as well as other ion sensitive FETs was developed in cooperation with the IAVT at TU Dresden (Institut für Aufbau- und Verbindungstechnik). The second part of this thesis investigates the usability of silicon nanowires for optical sensor applications from a theoretical point of view. Therefore a method for the extraction of Raman and Infrared spectra from molecular dynamics simulations was developed. The method was applied to undoped silicon nanowires and shows that the surface properties of the nanowires has a significant effect on optical spectra. These results demonstrate the relevance of semiconductor nanostructures for applications in optical spectroscopy.:I Introduction: Sensing with Nanostructures 1 Introduction 2 Field effect transistors as electronic sensor elements 3 Packaging: Connecting Nano and Macro 4 Nanostructures as transducers in optical spectroscopy II Electronic sensing with Schottky Barrier silicon nanowires 5 Schottky-Barrier silicon nanowire field effect transistors 6 ISFET measurement principles 7 pH and Biosensing with silicon nanowires 8 Thrombin sensing 9 Silicon nanowire FETs in a Lab-on-a-Chip device 10 Multiplexer sensing platform 11 Experimental methods III Simulating optical spectra of silicon nanowires 12 Theoretical fundamentals 13 Computational Methods 14 Results 15 Bibliography 16 Anhang

This contribution discusses scaling aspects of individually gated nanowire Schottky junctions which are essential parts of reconfigurable field effect transistors (RFETs). The applicability of the screening (or natural) length theory in relation to the carrier transport is discussed first. Various geometrical parameters of the device were investigated to find the optimal structure in terms of performance. For this purpose, electrostatic properties and the dynamic behavior of the RFET were studied. Finally the increase in performance due to an additional substitution of the silicon by germanium is analyzed.

In dieser Arbeit werden das Wachstum und die optischen Eigenschaften von selbstorganisierten GaN Nanodrähten auf TiN und nanodrahtbasierten (In,Ga)N/GaN Heterostrukturen für LED Anwendungen untersucht. Zu diesem Zweck wird das selbstorganisierte Wachstum von langen, dünnen und nicht koaleszierten GaN Nanodrähten auf TiN mittels Molekularstrahlepitaxie demonstriert. In weiteren Untersuchungen werden diese gut separierten und nicht koaleszierten GaN Nanodrähte auf TiN als Basis für die Herstellung von axialen und radialen Heterostrukturen verwendet. Trotz der definierten Morphologie der aktiven Zonen ist die Lichtausbeute der axialen (In,Ga)N Quantentöpfen eher gering. Um das Potenzial der Molekularstrahlepitaxie für das Wachstum von Kern-Hüllen-Strukturen im Allgemeinen besser zu verstehen, wird der Aspekt, dass die Seitenfacetten der Nanodrähte nur sequentiell den verschiedenen Materialstrahlen ausgesetzt werden, durch Modellierung des Wachstums von GaN Hüllen auf GaN Nanodrähten untersucht. Es wird gezeigt, dass Ga Adatomdiffusionsprozesse zwischen verschiedenen Facetten das Wachstum auf den Seitenfacetten stark beeinflussen. Neben der Untersuchung von radialsymmetrischen (In,Ga)N Hüllen wird ein neuer Wachstumsansatz vorgestellt, der die kontrollierte Abscheidung von III-Nitridhüllen auf verschiedenen Seiten des Nanodrahtes ermöglicht. Unter Ausnutzung der Richtungsabhängigkeit der Materialstrahlen in einer Molekularstrahlepitaxieanlage ermöglicht der neuartige Ansatz die sequentielle Abscheidung verschiedener Verbundstoffmaterialien auf einer bestimmten Seite der Nanodrähte, um eine einseitige Schale zu wachsen. Diese sequentielle gerichtete Abscheidungsmethode ermöglicht prinzipiell die Kombination mehrerer aktiver Zonen mit unterschiedlichen Eigenschaften auf verschiedenen lateralen Seiten ein und derselben Nano- oder Mikrostruktur. Solche Architekturen könnten beispielsweise für die Realisierung von mehrfarbigen Pixeln für Mikro-LED-Displays interessant sein. / In this thesis, the growth and the optical characteristics of self-assembled GaN nanowires on TiN and nanowire-based (In,Ga)N/GaN heterostructures for LED applications is investigated. To this end, the self-assembled growth of long, thin and uncoalesced GaN nanowires on TiN by molecular beam epitaxy is demonstrated. Subsequently, these well-separated and uncoalesced GaN nanowires on TiN are used as a basis for the fabrication of axial and radial heterostructures. Despite the well-defined morphology of the active regions, the luminous efficiency of axial (In,Ga)N quantum wells is found to be rather low. To better understand the potential of molecular beam epitaxy for the growth of core-shell structures in general, the aspect of the side facets of the nanowires being only sequentially exposed to the different material beams is studied by modeling the shell growth of GaN shells on GaN nanowires. It is shown that Ga adatom diffusion processes between different facets strongly affect the growth on the side facets. Besides the fundamental investigation of the growth of radially symmetric (In,Ga)N shells, a new growth approach which allows the controlled deposition of III-nitride shells on different sides of the nanowire is presented. Using the directionality of the material beams in an molecular beam epitaxy system, the novel approach facilitates the sequential deposition of different compound materials on a specific side of the nanowires to grow a one-sided shell. This sequential directional deposition method may in principle allow the combination of multiple active regions with different properties on different lateral sides of one and the same nano- or microstructure. Such architectures, for instance, might be interesting for the realization of multi-color pixels for micro-LED displays.