Étude de la croissance de nanofils de SiGe par dépôt chimique en phase vapeur et caractérisation par microscopie à force atomique. Les nanofils semi-conducteurs constituent des briques de bases au potentiel prometteur pour l’amélioration des dispositifs du futur. D’autre part, l’alliage SiGe permet de contrôler les propriétés électroniques de la matière telles que les mobilités des porteurs et la largeur de bande. Dans le cadre de ce travail de thèse, nous étudions les mécanismes de croissance catalysée de nanofils de SiGe et développons des méthodes de caractérisation de nanofils par AFM.Dans un premier temps, la croissance par CVD de nanofils de SiGe est étudiée en utilisant l’or comme catalyseur. Nous étudions l’influence du HCl en phase gazeuse qui permet un contrôle de la croissance de nanofils de SiGe et modélisons son action.Dans un deuxième temps, nous étudions la croissance de nanofils SiGe catalysée par siliciures compatibles CMOS, et la croissance de nanofils de Ge pur à basse température. Nous nous intéressons également à l’élaboration d’hétérostructures.Enfin, nous étudions le module de Young de NF unique de Si, GaN et ZnO par AFM et une nouvelle méthode de génération de potentiel piézoélectrique sur NF de GaN a été développée. / Study of SiGe nanowires growth by chemical vapour deposition and characterization by atomic force microscopy.The use of semiconductor nanowires as building block for futur devices is a promising way of improving their performances. Moreover, \SiGe alloy is valuable for today’s microelectronics. In the present work, the catalyzed growth mechanisms of SiGe nanowires are studied and new methods for nanowire caracterisation using AFM are developped.First, gold catalyzed SiGe nanowire growth by CVD is studied. A better control of SiGe nanwires morphology and composition is then achieved by introducing HCl in the gas phase. A qualitative model based on our observations is proposed to explain the role of HCl.Second, we study the growth of SiGe nanowires using CMOS compatibles silicides, and pure Ge nanowires growth at low temperature. We also present the elaboration of heterostructured nanowire using different catalysts.Finally, single nanowire Young modulus is measured thanks to different AFM methods and a new approach for piezoelctric nanowire caracterisation using AFM is described.

Le travail proposé dans cette thèse est basé sur des expérience de corrélation de photons faites sur un émetteur de photon unique semi conducteur: une boite quantique de CdSe dans un nanofil de ZnSe. La première démonstration d'émission de photons unique d'une boite quantique épitaxiée à température ambiante y est présentée. Pour expliquer ce résultat, nous avons étudie expérimentalement et théoriquement l'efficacité de couplage exciton-phonon et ses conséquences sur l'intensité de l'exciton avec la température. Nous présentons également des résultats optiques portant sur la robustesse de cette structure à haute température. La technique de corrélation de photons est également appliquée sur des boites quantiques chargées. la présence du exciton chargé nous a permis de sondé la structure fine du trio excité, de décrire ses processus de relaxations et d'obtenir une mesure direct du temps de spin flip du trou sur l'état p. Des indication sont également données sur la nature possible du dopage. Nous avons aussi étudié la diffusion spectrale de l'émetteur causée par les fluctuations électroniques de son environnement. Par un travail théorique nous montrons comment interpréter l'effet de l'élargissement phonon de la raie homogène, (processus poissonien) combiné avec l'effet de la diffusion spectral (processus markovien) sur la fonction de corrélation de la demi-raie. Grâce à l'expérience, nous concluons sur la statistique de l'énergie d'émission de l'émetteur à haute température. Nous appliquons cette théorie sur les nanofils et interprétons les dépendances en température et en puissance des fluctuations de l'environnement grâce au modèle de Kubo-Anderson. / The work proposed in this thesis is based on photon correlation experiments performed on a semi-conductor single photon emitter: CdSe/ZnSe nanowire quantum dot. Is presented the first demonstration of single photon emission at room temperature from an epitaxied quantum dot. To explain this result we investigated by a theoretical and experimental study, the exciton-phonon coupling efficiency and its consequence on the exciton luminescence intensity with temperature. We also present optical results on the robustness against temperature of this structure. Photon correlations techniques are also applied on charged quantum dots. Presence of the charged biexciton allowed to probe the fine structure of the excited trion, to describe its carrier relaxation processes, and to obtain a direct measurement of the p-shell hole spin flip time. Indications are also given on the possible doping nature. We also investigated spectral diffusion of the emitter caused by electronic fluctuations of the environnement. By a theoretical work, we show how to model the effect of the homogeneous phonon broadening, (poissonian emission energy process) combined with the spectral diffusion effect (markovian emission energy process) on the half line autocorrelation function. Thanks to experiments, We conclude on the statisic of the emission energy of the emitter at high temperature. We apply this theory on CdSe/ZnSe nanowire quantum dots and interpret temperature and power dependance of the environnement fluctuation thanks to the Kubo-Anderson Model.

Les nanostructures de semi-conducteurs de faibles dimensions (comme les nanofils(NFs)) sont devenues l'objet de recherches intensives pour explorer de nouveaux phénomènes émergents à l'échelle nanométrique et sonder leur possibilités d’ utilisation dans l'électronique du futur. Parmi les différents nanofils semi-conducteurs, SiC a des propriétés très particulières, comme une large bande interdite, une excellente conductivité thermique, un haut champ électrique de claquage, une stabilité chimique et physique, une haute mobilité des électrons et une haute biocompatibilité.Nous proposons dans cette étude ; d'examiner une nouvelle approche pour fabriquer des nanostructures de SiC par l'approche « top-down ». Cela permet l'élaboration de nanostructures cristallines de SiC de haute qualité monocristalline avec un niveau de dopage contrôlé. Le comportement de nanostructures de SiC gravées a également été étudié en fonction de polytypes et des orientations cristallographiques.Nous avons également étudié les trois principaux sujets de SiC nano-devices pour atteindre une excellente performance. Pour répondre à ces questions, deux types de SiC nanoFET (SiC NFFET et SiC NPFET) ont été fabriqués et caractérisés par l'utilisation de nanofils de SiC et de nanopiliers de SiC préparés respectivement par les méthodes « bottom-up » et « top-down ». / Low dimensional semiconductor nanostructures, such as nanowires (NWs), have become the focus of intensive research for exploring new emergent phenomena at the nanoscale and probing their possible use in future electronics. Among these semiconductor NWs, Silicon Carbide (SiC) has very unique properties, such as wide bandgap, excellent thermal conductivity, chemical and physical stability, high electron mobility and biocompatibility. These factors makes SiC a long standing candidate material to replace silicon in specific electronic device applications operating in extreme conditions or/and harsh environments. SiC nanostructures have been studied extensively and intensively over the last decade not only for their fabrication and characterization, but also for their diverse applications. I have outlined the growth of SiC nanostructures based on different growth methods, a noteworthy feature of their characteristic properties and potential applications in the chapter one. As-grown SiC NWs fabricated by bottom-up method present a high density of structural defects, such as stacking faults. This kind of defect is one of the factors which lead to poor electrical performance (such as weak gate effect and low mobility) of the related devices. Therefore, it is required to develop a high quality of SiC nanostructures with low density of the structural defects using an alternative method, such as top-down process. Main objectives of this thesis are divided into three main parts. The first part of the thesis (Chapter two), we present the simulation results of the electrical transport and thermoelectric properties of SiC NWs. I have investigated the thermoelectric enhancement by studying the complex interplay of the size of NWs, temperature and surface roughness. Our simulation results show that the ZT of C terminated SiC NW (2.05×2.05 nm2) reaches a maximum value of 1.04 at 600K. The second part of the thesis (Chapter there) is devoted to the fabrication of high quality SiC nanostructures with controlled doping level. I have developed a top-down fabrication technique for high quality nanometer scale SiC nanopillars (NPs) using inductively coupled plasma etching. The etching behavior of SiC NPs has also been studied depending on polytypes and crystallographic orientations. Under the optimal etching conditions using a large circular mask pattern with 370 nm diameter, the obtained 4H-SiC nanopillars exhibit high anisotropy features (6.4) with a large etch depth (>7μm). A hexagonal, rhombus and triangle based pillar structures have been obtained using α-SiC (0001), 3C-SiC (001) and 3C-SiC (111) substrates, respectively. The last part of the thesis (Chapter four) is dedicated to the design and the electrical characterization of SiC nanodevices. To investigate the electrical properties of SiC nanostructures, two different kinds of SiC nanoFETs (SiC NWFET and SiC NPFET) have been fabricated by using SiC NWs and SiC NPs prepared via bottom-up method and top-down methods, respectively. In case of SiC NWFET, low resistivity ohmic contacts (378 kΩ) have been obtained after the annealing at 650 °C. Ni silicide intrusion into the SiC NW channel has been observed the annealing at 700 °C. This temperature is compared to one of other group IV materials. In case of SiC NPFET, two different types of NPFET (3C-SiC (001) and 4H-SiC (0001)) have been fabricated using our SiC nanopillars, obtained by top-down approach. The estimated values of the field-effect carrier mobility are 232.7 cm2⋅V-1s-1 for 3C-SiC (001) NPFET (#2) and 53.6 cm2⋅V-1s-1 for 4H-SiC (0001) NPFET, which is higher than the best values reported in the literature (15.9 cm2⋅V-1s-1).

Submitted by Fabio Sobreira Campos da Costa (fabio.sobreira@ufpe.br) on 2016-08-18T13:04:44Z No. of bitstreams: 2 license_rdf: 1232 bytes, checksum: 66e71c371cc565284e70f40736c94386 (MD5) Dissertacao-Version-Final.pdf: 16533060 bytes, checksum: 920aa7a96edb1e78d330ff1b83033a68 (MD5) / Made available in DSpace on 2016-08-18T13:04:44Z (GMT). No. of bitstreams: 2 license_rdf: 1232 bytes, checksum: 66e71c371cc565284e70f40736c94386 (MD5) Dissertacao-Version-Final.pdf: 16533060 bytes, checksum: 920aa7a96edb1e78d330ff1b83033a68 (MD5) Previous issue date: 2015-07-29 / CAPEs / CNPq / Neste trabalho é realizado um estudo sobre os efeitos das rugosidades nas propriedades magnéticas de nanofios de níquel para os modos de reversão curling e transversal. Para o estudo adotamos a simulação micromagnética como ferramenta fundamental e para ser implementada utilizamos OOMMF. Para mudar a rugosidade utilizamos uma cadeia de elipsóides e uma forma de variar este parâmetro foi fixando o comprimento dos fios em 1 μm e mudando o número de elipsóides na cadeia. Dessa forma a relação de aspecto dos elipsóides foi modificada para ser entendida como câmbios na rugosidade. Nas análises realizamos estudos dinâmicos e estáticos da reversão dos momentos. A simulação se baseia fundamentalmente na resolução da equação LLG. Nos estudos dinâmicos monitoramos a dependência temporal dos mapas de momentos a das componentes transversais da magnetização depois de ser invertido o campo aplicado. Foram simulados os ciclos de histerese através da minimização da energia livre de Gibbs. Nos estudos estáticos monitoramos a dependência ângular do campo coercitivo, campo de comutação e a magnetização remanente. Observamos em modo geral que há grandes efeitos das rugosidades sobre as propriedades magnéticase que nossos resultados reproduzem os reportados na literatura assim como as curvas experimentais. / This work is a study on the effects of roughness on the magnetic properties of nickel nanowires for their reversal modes (curling and transversal). For the study we adopted the micromagnetic simulation as a fundamental tool and we used OOMMF to implemented. To change the roughness use ellipsoids chain and a way to vary this parameter was securing the length of the wires in 1 μm and changing the number of ellipsoids in the sequence. Thus the ellipsoids of the aspect ratio has been modified to be understood as the exchange roughness. In the analyzes we perform static and dynamic studies of the reversal of moments. The simulation is based largely on the resolution of the LLG equation. In dynamic studies we monitor the time dependence of the maps of magnetic moments and the transverse components of the magnetization after being reversed the field applied. The hysteresis cycles were simulated by minimization of Gibbs free energy.In static studies we monitor the angular dependence of the coercive field, the switching field and remanent magnetization. We observe in general that there are major effects of roughness on the magnetic properties and that our results reproduce the reported in the literature as well as the experimental curves.

L'étude des nano-objets en matériau semi-conducteur a révélé des propriétés mécaniques exceptionnelles, différentes de celles observées dans le massif. Outre l'intérêt technologique majeur qu'ils représentent à travers la miniaturisation toujours plus poussée des systèmes électroniques, leurs caractéristiques intrinsèques en font des objets particulièrement bien adaptés pour des études fondamentales. Dans ce contexte, nous avons étudié le déclenchement de la plasticité dans les nano-fils de silicium, les premiers stades de la plasticité étant en effet déterminants pour l'évolution ultérieure du système. Le silicium est ici considéré comme un semi-conducteur modèle. Pour cette étude, nous avons utilisé des simulations atomistiques qui sont parfaitement appropriées à l'analyse détaillée de la structure atomique des nano-objets. Après avoir contextualisé notre étude tant du point de vue de l'expérience que de celui des simulations, nous présentons les techniques numériques que nous avons utilisées. Nous décrivons ensuite l'étude de la déformation de nano-fils monocristallins, révélant notamment le rôle majeur des surfaces et l'activation d'un système de glissement jamais observé dans le silicium massif. Ce système de glissement est analysé en détail, et son activation est expliquée notamment au moyen de calculs ab initio. Enfin, nous avons considéré la déformation de nano-fils coeur-coquille cristal-amorphe et mis en évidence un comportement différent de celui observé pour les nano-fils monocristallins. Ainsi, des défauts natifs à l'interface cristal-amorphe semblent agir comme des germes favorisant la nucléation de la première dislocation qui va initier la plasticité. / The study of semiconductor nano-objets has revealed amazing mechanical properties, different from what is commonly observed in bulk. Besides the technological interest of these objects, due to the ever more pronounced miniaturization of electronic devices, their intrinsic specificities make them particularly well suited for fundamental studies. During this thesis, we have thus studied the onset of plasticity in silicon nanowires, the first stages of plasticity being indeed deciding for the subsequent evolution of the system. Silicon is here considered as a model semiconductor. For that study, we have used atomistic simulations, which are well appropriate for the detailed analysis of the nano-objects atomic structure. We first recall the context of that study, both from the experiments and simulations points of view. We then present the numerical methods used. Thestudy of the deformation of monocrystalline nanowires is then described; it reveals in particular the deciding role of surfaces, and the activation of one slip system never observed in bulk silicon. This slip system is analyzed in details, and its activation is explained notably thanks to ab initio calculations. Finally, crystalline-amorphous core-shell silicon nanowires are considered; and shownto exhibit a different behavior from that of monocrystalline nanowires. Indeed, native defects at the crystalline/amorphous interface seem to act as seeds, favoring the nucleation of the first dislocation which gives rise to the plasticity.

Pour des intérêts technologiques, la compréhension des mécanismes de déformation des nano-structures est essentielle afin d'éviter que la relaxation des contraintes ne génère des défauts aux conséquences parfois catastrophiques. De plus, dans les nano-objets semi-conducteurs, les expériences montrent une transition fragile-ductile qui dépend de la taille des systèmes : ils sont ductiles pour des dimensions inférieures à quelques centaines de nanomètres, fragiles au-delà. Nous avons abordé ce problème via des calculs de dynamique moléculaire pour simuler des tests de déformation de nano-fils, et nous avons choisi le silicium comme prototype de matériau semi-conducteur. Nous avons dans un premier temps analysé des grandeurs mesurables comme les coefficients d'élasticité et la limite d'élasticité en fonction de différents paramètres, et montré notamment que la limite d'élasticité diminue quand la hauteur du nano-fil augmente. L'analyse à l'échelle atomique des systèmes déformés nous a permis de décomposer le comportement global des nano-fils en mécanismes élémentaires ; nous avons ainsi montré que la nucléation d'une première dislocation est à l'origine de l'ensemble des comportements, ductiles et fragiles. Après cette nucléation initiale, le comportement global du nano-fil est déterminé par la compétition entre la nucléation d'autres dislocations et l'ouverture de cavités. Finalement, nous avons essayé d'estimer quantitativement les degrés de ductilité et de fragilité des nano-fils en analysant l'énergie relaxée pendant le régime plastique par ces deux mécanismes élémentaires, et de rationaliser ainsi le rôle de la taille du système sur la transition fragile-ductile. / For technological interest, the understanding of the deformation mechanisms at the nano-scale is essential in order to prevent stress relaxation mechanisms that could lead to defects formation and/or to catastrophic failure. Furthermore, recent experimental findings showed in semiconductor nano-objects, a size dependent brittle to ductile transition: they are ductile below a few hundreds of nanometers, brittle above that scale. To investigate this behavior, we have used molecular dynamics as a tool to simulate deformation tests of nanowires and we have used silicon as a prototypical semiconductor material. First we analyzed a number of measurable quantities such as the elasticity coefficients and the elasticity limit with respect to various parameters and we found that the elasticity limit decreases when the length of the nanowire increases. An analysis of the atomic structure of the deformed systems allowed us to decompose the overall mechanical behavior of the nanowires into elementary mechanisms; we thus showed that the nucleation of a first dislocation was systematically at the origin of ductility and brittleness. After the initial dislocation nucleation, the competition between further dislocation nucleation events and cavities opening, determine the overall mechanical behavior of the nanowire. Finally, we tried to estimate quantitatively the degree of ductility and brittleness of the nanowires by analyzing the amount of energy released by those two elementary mechanisms during the plastic regime and we rationalized the role of the size of the deformed systems on the brittle to ductile transition.

Conselho Nacional de Desenvolvimento Científico e Tecnológico / In this work we used the density functional theory to study InAs and InP nanowires and InAs/InP nanowire heterostructures. Initially we studied the structural, electronic and mechanical properties of InAs and InP nanowires as a function of the diameter and the influence of external mechanical stress on the electronic properties of these systems. Our results show that all analyzed properties change with increasing quantum confinement. Further, the application of an external stress along the nanowire axis reveals a direct to indirect band gap transition for compressive strain in very thin nanowires. We have also studied the quantum confinement effects on the effective masses of charge carriers in InAs nanowires grown in different crystallographic directions. We found the electron and hole effective masses increase with decreasing diameter independently of the growth direction. However, in the range of the studied diameters, the hole effective mass is significantly smaller to the corresponding one at the bulk system. From the study of the stability and electronic properties of the cadmium and zinc doped InAs nanowires, we show that the Cd impurity prefers to be at the core region, whereas Zn impurity is found to be equally distributed along the nanowire diameter. The analysis of the electronic properties of these systems show that these impurities introduce shallow acceptor levels in the band gap, enabling a p-type behavior of these nanowires. Finally, we determined (i) the structural, electronic and mechanical properties of axially and radially modulated InAs/InP nanowire heterostructures for a specific diameter and (ii) the structural and electronic properties of radial InAs/InP nanowire heterostructures as a function of the diameter and composition. From (i), our calculations showed the analyzed properties have an intermediate value between those for the pure InAs and InP nanowires with similar diameters. In particular, the presence of an InP shell covering the InAs nanowires enhances the InAs electron mobility, as compared to the uncapped InAs nanowires. In addition, for the radial heterostructure, the conduction and the valence band alignments favor a type-I heterojunction, while for the axial heterostructure a transition from a type-I to a type-II heterojunction could occur at this range of diameters. From (ii), we observed that for nanowire heterostrutures of similar diameters, the variation of their structural and electronic properties with the composition possesses significant deviations from the linear behavior, which are dependent of the nanostructure diameter. The conduction band offset is approximately zero and the valence band offset decrease regardless of diameter and composition of the heterostructure. / Neste trabalho realizamos um estudo teórico, baseado na teoria do funcional da densidade, em nanofios de InAs e InP e em heteroestruturas de nanofios InAs/InP. Inicialmente estudamos a variação das propriedades estruturais, eletrônicas e mecânicas com o diâmetro em nanofios de InAs e InP, e as possíveis alterações nas propriedades eletrônicas destes sistemas sob a influência de uma tensão mecânica externa. Nossos resultados mostram que todas as propriedades analisadas são alteradas com o aumento do confinamento quântico. Além disso, a aplicação de uma tensão externa ao longo do eixo de crescimento dos fios leva a uma transição de gap direto para indireto nos nanofios de menores diâmetros. A seguir, avaliamos os efeitos do confinamento quântico na massa efetiva dos portadores de carga em nanofios de InAs crescidos em diferentes direções cristalográficas. Encontramos que as massas efetivas dos elétrons e dos buracos aumentam com a redução do diâmetro, independentemente da direção de crescimento dos nanofios. Contudo, no intervalo de diâmetro estudado, a massa efetiva dos buracos nos nanofios é significativamente menor do que a massa efetiva dos buracos no cristal. Do estudo da estabilidade e das propriedades eletrônicas de nanofios de InAs dopados substitucionalmente com cádmio e zinco observamos que, independentemente do diâmetro dessas nanoestruturas, as impurezas de Cd são mais estáveis quando estão no centro do nanofio, enquanto que as impurezas de Zn se distribuem quase que uniformemente ao longo do diâmetro do fio. Do ponto de vista eletrônico, observamos que estas impurezas introduzem níveis aceitadores rasos no gap de energia desses materiais possibitando um comportamento tipo-p desses nanofios. Por fim, determinamos: (i) as propriedades estruturais, eletrônicas e mecânicas de heteroestruturas axiais e radiais de nanofios InAs/InP para um determinado diâmetro; e (ii) as propriedades estruturais e eletrônicas de heteroestruturas radiais InAs/InP como uma função do diâmetro e da composição. Em (i), nossos resultados mostram que as propriedades analisadas possuem valores intermediários entre aqueles dos nanofios de InAs e InP de mesmo diâmetro. Em particular, observamos que a presença de uma camada de InP sobre nanofios de InAs aumenta significativamente sua mobilidade eletrônica quando comparada com a de um nanofio de InAs puro. Além disso, na heteroestrutura radial, o alinhamento das bandas de condução e das bandas de valência favorece uma heteroestrutura do tipo I, enquanto que na heteroestrutura axial, uma transição de uma heteroestrutura do tipo I para uma heteroestrutura do tipo II poderá ocorrer neste intervalo de diâmetros. Em (ii), para as heteroestruturas com diâmetros similares, observamos que a variação de suas propriedades estruturais e eletrônicas com a composição possui desvios significativos do comportamento linear, sendo estes dependentes do diâmetro dessas nanoestruturas. O descasamento da banda de condução é aproximadamente nulo enquanto que o descasamento da banda de valência diminui independente do diâmetro e da composição da heteroestrutura.

Nanostrukturen haben in den letzten Jahrzehnten durch konsequente Förderung wie der im Jahr 2000 gestarteten National Nanotechnology Initiative der USA oder des deutschen Pendants Aktionsplan Nanotechnologie erhebliches Aufsehen, nicht nur in der Wissenschaft, sondern auch in der technischen und wirtschaftlichen Umsetzung erfahren. In Kombination mit biologischen Systemen, deren Funktionalität sich auf der Größenordnung von Nanometern abspielt, finden nanotechnologische Entwicklungen auf dem Gebiet der Medizin ein großes technisches Anwendungsgebiet. Diese Arbeit widmet sich der Untersuchung und technischen Entwicklung von Siliziumnanodrähten als Sensoren für zukünftige medizinische Anwendungen. Im Gegensatz zu Sensoren die auf dotierten Nanodrähten basieren, wurden hier undotierte Nanodrähte untersucht, die mit geringerem Produktionsaufwand auskommen und mittels Schottky-Barrieren als Feldeffekttransistoren nutzbar sind. Deren Eigenschaften wurden im Hinblick auf pH und Biosensorik theoretisch und experimentell untersucht, sowie technisch in ein lab-on-chip sowie ein kompaktes Multiplexer-Messgerät integriert. In einem zweiten, separaten Teil wurden die Eigenschaften undotierter Nanodrähte für die optische Spektroskopie theoretisch modelliert. Die Inhalte beider Teile werden im folgenden kurz zusammengefasst. Um die elektrischen Sensoreigenschaften der Siliziumnanodrähte zu untersuchen, wurden zunächst Computermodelle der Drähte erstellt, mit deren Hilfe der Elektronentransport in flüssiger Umgebung quantenmechanisch modelliert wurde. Die dafür erstellten Modellvorstellungen waren für die sich daran anschließenden experimentellen Untersuchungen des Rauschverhaltens, der pH-Sensitivität sowie der Biosensoreigenschaften sehr vorteilhaft. Mit Hilfe einer neu entwickelten Messmethode konnte der optimale Arbeitspunkt der Sensoren ermittelt werden, sowie die hohe Sensorqualität mittels einer empirischen mathematischen Beschreibung des zu erwartenden Sensorsignals eingeordnet werden. Weiterhin wurden für die Medizintechnik relevante Messungen von Thrombin durchgeführt. Damit ist für den hier beschriebenen Sensortyp ein proof-of-concept für neuartige medizinische Messelemente gelungen. Um die kleinen Abmessungen der Sensoren darüber hinaus technisch nutzbar zu machen, wurden sie in ein lab-on-chip System integriert, in welchem sie als Sensoren für den pH-Wert sowie die ionische Konzentration in Nanoliter-Tropfen verwendet wurden. Desweiteren wurde in Kooperation mit dem Institut für Aufbau- und Verbindungstechnik ein portables Messgerät entwickelt, welches die parallele Messung mehrerer Nanodrahtsensoren ermöglicht. Im zweiten Teil der Arbeit wird eine theoretische Untersuchung zur Eignung von Silizium-Nanodrähten als Messsonden (Probes) für die optische Spektroskopie vorgestellt. Dazu wurde eine Methode entwickelt mittels derer es möglich ist, Raman und Infrarotspektren von Nanostrukturen mittels Molekulardynamik zu berechnen. Die Methode wurde auf undotierte Silizium-Nanodrähte augewendet und zeigt, dass die Oberflächenbeschaffenheit der Drähte die optischen Spektren entscheidend beeinflusst. Damit konnte die Relevanz von Halbeiter-Nanostrukturen auch für Anwendungen in der optischen Spektroskopie gezeigt werden. / Nanostructures have attracted great attention not only in scientific research, but also in engineering applications during the last decades. Especially in combination with biological systems, whose complex function is controlled from nanoscale building blocks, nanotechnological developments find a huge field of applications in the medical sector. This work is dedicated to the functional understanding and technical implementation of silicon nanowires for future medical sensor applications. In contrast to doped silicon nanowire based sensors, this work is focussed on pure, undoped silicon nanowires, which have lower demands on production techniques and use Schottky-barriers as electric field detectors. The pH and biosensing capabilities of such undoped silicon nanowire field effect transistors were investigated theoretically and experimentally and further integrated in a lab-on-a-chip device as well as a small-scale multiplexer measurement device. In a second separate part, the optical sensing properties of undoped silicon nanowires were theoretically modeled. The main contents of both parts are shortly described in the following paragraphs. A multiscale model of silicon nanowire FETs to describe the charge transport in liquid surrounding in a quantum mechanical framework was developed to investigate the sensing properties of the nanowire sensors in general. The model set the basis for the understanding of the subsequent experimental investigations of noise characterization, pH sensitivity and biosensing properties. With the help of a novel gate sweeping measurement method the optimal working point of the sensors was determined and the high sensor quality could be quantified in terms of an empirical mathematical model. The sensor was then used for measurements of medically relevant concentrations of the Thrombin protein, providing a proof-of-concept for medical applications for our newly developed sensor. In order to exploit the small size of our sensors for technical applications we integrated the devices in lab-on-a-chip system with a microfluidic droplet generation module. There they were used to measure the pH and ionic concentration of droplets. Finally a portable multiplex measurement device for silicon nanowire sensors as well as other ion sensitive FETs was developed in cooperation with the IAVT at TU Dresden (Institut für Aufbau- und Verbindungstechnik). The second part of this thesis investigates the usability of silicon nanowires for optical sensor applications from a theoretical point of view. Therefore a method for the extraction of Raman and Infrared spectra from molecular dynamics simulations was developed. The method was applied to undoped silicon nanowires and shows that the surface properties of the nanowires has a significant effect on optical spectra. These results demonstrate the relevance of semiconductor nanostructures for applications in optical spectroscopy.

Ce travail de thèse propose de réaliser un nanofil électrique auto-assemblé constitué de protéines. L'unité de base de ce nanofil est une protéine chimère comprenant un domaine capable de former des fibres amyloïdes (Het-s 218-289) et un domaine capable d'effectuer des transferts d'électrons (une rubrédoxine). Le premier domaine permet la réalisation d'une fibre par auto-assemblage tandis que le deuxième est exposé à la surface de cette structure. Les caractéristiques redox du domaine exposé permettent aux électrons de se déplacer d'un bout à l'autre de la fibre par sauts successifs. Un tel nanofil a été créé et caractérisé par différentes techniques biophysiques. Ensuite, la preuve de la conduction des nanofils a été apportée sur des ensembles d'objets, de manière indirecte par électrochimie, et de manière directe par des mesures tension/courant. Ces travaux ouvrent la voie à la réalisation d'objets biocompatibles, biodégradables, possédant des propriétés électroniques exploitables dans des dispositifs technologiques. / The research described in this thesis aims at creating a self-assembled nanowire only made of proteins. The building block of this wire is a chimeric protein that comprises an amyloid fibril forming domain (Het-s 218-289) and an electron transfer domain (rubredoxin). The first one self-assembles in amyloid fibrils which display the second at their surface. Redox characteristics of the exposed domain allow electrons to move from one extremity of the fibril to the other by successive jumps. Such a nanowire has been created and characterized by various biophysical experiments. Then, the conductivity of the nanowires has been demonstrated on sets of wires by electrochemistry and by direct current measurements. These experiments pave the way for future design of biocompatible and biodegradable objects that possess usable electronic properties.

Rapid and reliable diagnostics of a disease represents one of the main focuses of today’s academic and industrial research in the development of new sensor prototypes and improvement of existing technologies. With respect to demographic changes and inhomogeneous distribution of the clinical facilities worldwide, especially in rural regions, a new generation of miniaturized biosensors is highly demanded offering an easy deliverability, low costs and sample preparation and simple usage. This work focuses on the integration of nanosized electronic structures for high-specific sensing applications into adequate microfluidic structures for sample delivery and liquid manipulation. Based on the conjunction of these two technologies, two novel sensor platforms were prototyped, both allowing label-free and optics-less electrochemical detection ranging from molecular species to eukaryotic micron-sized human cells.:Table of Figures List of Tables Abbreviations List of Symbols 1 Introduction 1.1 Motivation 1.2 State of the art 1.3 Scope of this thesis 2 Fundamentals 2.1 Sensors at the nanoscale 2.2 Transistors technology 2.2.1 p-n junction 2.2.3 The MOSFET 2.2.4 The ISFET and BioFET 2.3 Impedance measurements for biodetection 2.3.1 Electrical impedance spectroscopy 2.3.2 Electrical impedance cytometry 2.4 Microfluidics 2.4.1 Definition 2.4.2 Droplet-based microfluidics 2.5 Biomarkers for sensing applications 2.5.1 Peripheral blood mononuclear cells (PBMCs) 2.5.2 Physical parameters 3. Material and methods 3.1 General 3.1.1 Materials and chemicals 3.1.2 Surface cleaning 3.2 Lithography 3.2.1 Electron beam lithography 3.2.2 Laser lithography 3.2.3 UV lithography 3.2.4 Soft lithography 3.3 Thermal deposition of metals 3.4 APTES functionalization 3.4.1 Fluorescent labeling of APTES 3.5 Measurement devices 3.5.1 SiNW FET measurements 3.5.2 Electrical Impedance cytometry measurements 3.6 Bacteria and cell cultivation 3.6.1 PBMC purification and treatment 3.6.2 Bacteria cultivation 4. Compact nanosensors probe microdroplets 4.1 Overview 4.2 Fabrication 4.2.1 SiNW FET fabrication 4.2.2 SiNW FET modification for top-gate sensing 4.3 Electrical characterization 4.4 Flow-focusing droplet generation 4.4.1 Flow-focusing geometry 4.4.2 Flow-focusing droplet characterization 4.4.3 Microfluidic integration 4.5 Deionized water droplet sensing 4.6 Phosphate-buffered saline (PBS) droplet sensing 4.6.1 Influence of the droplet’s ionic concentration 4.6.2 Plateau formation in dependence of the droplet’s settling time 4.6.3 Droplet analysis by their ratio 4.6.4 Dependence on pH value 4.6.5 Long time pH sensing experiment 4.6.6 Dependence on ionic concentration 4.7 Tracking of reaction kinetics in droplets 4.7.1 Principle and setup of the glucose oxidase (GOx) enzymatic test 4.7.2 GOx enzymatic assay 4.8 Stable baseline by conductive carrier phase 5. Impedance-based flow cytometer on a chip 5.1 Overview 5.2 Overview of the fabrication of the sensor device 5.3 COMSOL simulation of sensing area 5.3.1 Prototyping of the sensing geometry 5.3.2 Optimization of the sensing geometry 5.3.3 Evaluation of the working potential 5.3.4. Scaling of the sensing area 5.4 Fabrication of the nanoelectronic sensing structure 5.4.1 Nanofabrication and analysis 5.4.2 Evaluation of the proximity effect 5.5 Microcontacting of nanostructured sensing structures 5.6 Electrical characterization of the sensing structure 5.6.1 Characterization in alternating current 5.6.2 Characterization in direct current (DC) 5.7 Scaling effect of nanostructures in static sensing conditions 5.8 Multi-analyte detection on the sensor 5.9 Microfluidic focusing system 5.9.1 1D focusing using FITC-probed deionized water 5.9.2 2D Focusing using fluorescent microparticles 5.10 Microfluidic integration of the two technologies 5.11 Dynamic SiO2 particle detection 5.11.1 Single particle detection 5.11.2 Scatter plot representation 5.11.3 Effect of the sensing area in dynamic particle detection 5.11.4 Dynamic detection of SiO2 particles with different diameters 5.12 Detection of peripheral blood mononuclear cells (PBMCs) 5.12.1 Overview 5.12.2 PBMC classification detected by impedance cytometry 5.12.3 PBMC Long-time detection 5.13 Detection of acute myeloid leukemia by impedance cytometry 5.13.1 Manual analysis of the output response 5.13.2 Learning algorithm for automatic cell classification 5.14 Exploring the detection limit of the device 6. Summary and outlook Scientific output References Acknowledgements / Rasche und zuverlässige biologische Krankheitsdiagnostik repräsentiert eines der Hauptfokusse heutiger akademischer und industrieller Forschung in der Entwicklung neuer Sensor-Prototypen und Verbesserung existierender Technologien. In bezug auf weltweite demographische Änderungen und hohe Distanzen zu Kliniken, besonders in ländlichen Gegenden, werden zusätzliche Anfordungen an neue miniaturisierte Biosensor-Generationen gestellt, wie zum Beispiel ihre Transportfähigkeit, geringe Kosten und Probenpräparation, sowie einfache Handhabung. Diese Dissertation beschäftigt sich mit der Integration nanoskalierter Strukturen zur Detektion chemischer und biologischer Spezies und mikrofluidischen Kanälen zu deren Transport und zur Manipulation der Ströme. Basierend auf der Verbindung dieser beiden Technologien wurden zwei Sensor-Plattformen entwickelt, die eine markierungsfreie und nicht-optische elektrische Detektion von Molekülen bis zu eukaryotischen menschlichen Zellen erlauben.:Table of Figures List of Tables Abbreviations List of Symbols 1 Introduction 1.1 Motivation 1.2 State of the art 1.3 Scope of this thesis 2 Fundamentals 2.1 Sensors at the nanoscale 2.2 Transistors technology 2.2.1 p-n junction 2.2.3 The MOSFET 2.2.4 The ISFET and BioFET 2.3 Impedance measurements for biodetection 2.3.1 Electrical impedance spectroscopy 2.3.2 Electrical impedance cytometry 2.4 Microfluidics 2.4.1 Definition 2.4.2 Droplet-based microfluidics 2.5 Biomarkers for sensing applications 2.5.1 Peripheral blood mononuclear cells (PBMCs) 2.5.2 Physical parameters 3. Material and methods 3.1 General 3.1.1 Materials and chemicals 3.1.2 Surface cleaning 3.2 Lithography 3.2.1 Electron beam lithography 3.2.2 Laser lithography 3.2.3 UV lithography 3.2.4 Soft lithography 3.3 Thermal deposition of metals 3.4 APTES functionalization 3.4.1 Fluorescent labeling of APTES 3.5 Measurement devices 3.5.1 SiNW FET measurements 3.5.2 Electrical Impedance cytometry measurements 3.6 Bacteria and cell cultivation 3.6.1 PBMC purification and treatment 3.6.2 Bacteria cultivation 4. Compact nanosensors probe microdroplets 4.1 Overview 4.2 Fabrication 4.2.1 SiNW FET fabrication 4.2.2 SiNW FET modification for top-gate sensing 4.3 Electrical characterization 4.4 Flow-focusing droplet generation 4.4.1 Flow-focusing geometry 4.4.2 Flow-focusing droplet characterization 4.4.3 Microfluidic integration 4.5 Deionized water droplet sensing 4.6 Phosphate-buffered saline (PBS) droplet sensing 4.6.1 Influence of the droplet’s ionic concentration 4.6.2 Plateau formation in dependence of the droplet’s settling time 4.6.3 Droplet analysis by their ratio 4.6.4 Dependence on pH value 4.6.5 Long time pH sensing experiment 4.6.6 Dependence on ionic concentration 4.7 Tracking of reaction kinetics in droplets 4.7.1 Principle and setup of the glucose oxidase (GOx) enzymatic test 4.7.2 GOx enzymatic assay 4.8 Stable baseline by conductive carrier phase 5. Impedance-based flow cytometer on a chip 5.1 Overview 5.2 Overview of the fabrication of the sensor device 5.3 COMSOL simulation of sensing area 5.3.1 Prototyping of the sensing geometry 5.3.2 Optimization of the sensing geometry 5.3.3 Evaluation of the working potential 5.3.4. Scaling of the sensing area 5.4 Fabrication of the nanoelectronic sensing structure 5.4.1 Nanofabrication and analysis 5.4.2 Evaluation of the proximity effect 5.5 Microcontacting of nanostructured sensing structures 5.6 Electrical characterization of the sensing structure 5.6.1 Characterization in alternating current 5.6.2 Characterization in direct current (DC) 5.7 Scaling effect of nanostructures in static sensing conditions 5.8 Multi-analyte detection on the sensor 5.9 Microfluidic focusing system 5.9.1 1D focusing using FITC-probed deionized water 5.9.2 2D Focusing using fluorescent microparticles 5.10 Microfluidic integration of the two technologies 5.11 Dynamic SiO2 particle detection 5.11.1 Single particle detection 5.11.2 Scatter plot representation 5.11.3 Effect of the sensing area in dynamic particle detection 5.11.4 Dynamic detection of SiO2 particles with different diameters 5.12 Detection of peripheral blood mononuclear cells (PBMCs) 5.12.1 Overview 5.12.2 PBMC classification detected by impedance cytometry 5.12.3 PBMC Long-time detection 5.13 Detection of acute myeloid leukemia by impedance cytometry 5.13.1 Manual analysis of the output response 5.13.2 Learning algorithm for automatic cell classification 5.14 Exploring the detection limit of the device 6. Summary and outlook Scientific output References Acknowledgements