Stuttgart, Univ., Diss., 2007.

Techn. University, Diss., 2001--Berlin.

Universiẗat, Diss., 1999--Dortmund.

Techn. Hochsch., Diss., 1999--Aachen.

Techn. Hochsch., Diss., 2001--Aachen.

In many technological applications of structured metallic alloys, hydrogen embrittlement (HE) is a major concern as it can penetrate in most metals, degrade their properties and lead to premature failures. Despite numerous efforts in the past decades during which many microscopic mechanisms were proposed, a clear understanding of H embrittlement mechanisms has not been achieved yet. Since HE processes occur on an atomic-scale, the exact mechanisms leading to HE are not easily identified experimentally. One possible improvement would be to use atomic-scale simulations to try to capture details of deformation and fracture processes at the atomic level, enabling the investigation of relevant microscopic mechanism. In such context, the goal of this PhD work is to understand and quantify H interactions with defects like vacancies, dislocations and cracks in fcc metals through multi-scale modeling. The study is organized in four main parts. In the first part, we employed first principle calculations (based on density functional theory) to describe H interaction with a vacancy in Nickel. More specifically, the segregation energies of multiple H atoms in a single and di-vacancies were computed. Two characteristic energies were found which clarify the experimental peaks observed in Thermal Desorption Spectra in the literature. The equilibrium concentrations of H-vacancy clusters was then evaluated, under conditions relevant to HE and stress corrosion cracking (SCC) of Ni based alloys (nuclear industry),by Monte Carlo simulations and a thermodynamic model developed from our DFT data. In the second part, we quantified the trapping effect of vacancies on H diffusion in Nickel. With DFT computed jump barriers, related to H trapping and detrapping in vacancies, we employed accelerated Kinetic Monte Carlo (KMC) simulations to evaluate the H diffusion coefficient as a function of vacancy concentration and temperature. In the third part, we studied the diffusion of H-vacancy clusters in Ni, based on the combination of DFT and a statistical method. DFT calculations of vacancy jump barriers were performed for clusters containing from one to six H inside the vacancy. With these computed barriers and previous calculated concentrations of H-vacancy clusters, a simple stochastic model similar to the KMC procedure was developed to estimate the diffusion coefficient of H-vacancy clusters as a function of H concentration and temperature. In the last part, we studied the interaction of hydrogen with a blunted crack tip in Aluminum by combined EAM (semi-empirical interatomic potential) and DFT calculations. Embedded atom method (EAM) potential simulations were performed to evaluate the H effect on dislocation emission from a blunted crack tip under mixed mode loading. This phenomenon can be understood by the H induced change of the unstable stacking fault energy (γus ) in Rice’s model. Therefore, DFT and EAM calculations of γus were performed including the effects of H and of the mixed mode loads. It is shown that the effect of the load perpendicular to the glide plane is very strong, contrary to the effect of sub-surface H, which is negligible

This thesis presents i-PI, a new path integral molecular dynamics code designed to capture nuclear quantum effects in ab initio electronic structure calculations of condensed phase systems. This software has an implementation of estimators used to calculate a wide range of static and dynamical properties and of state-of-the-art techniques used to increase the computational efficiency of path integral simulations. i-PI has been designed in a highly modular fashion, to ensure that it is as simple as possible to develop and implement new algorithms to keep up with the research frontier, and so that users can take maximum advantage of the numerous electronic structure programs which are freely available without needing to rewrite large amounts of code. Among the functionality of the i-PI code is a novel integrator for constant pressure dynamics, which is used to investigate the properties of liquid water at 750 K and 10 GPa, and efficient estimators for the calculation of single particle momentum distri- butions, which are used to study the properties of solid and liquid ammonia. These show respectively that i-PI can be used to make predictions about systems which are both difficult to study experimentally and highly non-classical in nature, and that it can illustrate the relative advantages and disadvantages of different theoretical methods and their ability to reproduce experimental data.

Les propriétés des matériaux ferroélectriques proviennent principalement de l’influencedes conditions aux limites et des déformations sur la polarisation. Cette influence est encoreplus grande à de petites échelles ou des structures particulières de la polarisation apparaissent,comme les vortex dans les cubes quantiques ou des structures en rayures dans lescouches minces. Pour le calcul, à très basses échelles, de telles structures de polarisation, lesHamiltonien effectifs, basés sur les calculs ab-initio sont les plus utilisés. Parallèlement Lesmodèles continus sont préconisés à plus grandes échelles. Néanmoins, il n’existe pas de lienentre ces deux modèles. Le but de cette thèse est alors de construire une approche permettantde relier ces deux modèles et par cela même ces différentes échelles.Notre modèle se base sur un Hamiltonien effectif écrit pour le titanate de baryum enfonction de la polarisation et des déformations. Cet Hamiltonien est reformulé de façon àdécrire un milieu continu. Les difficultés de cette reformulation proviennent des interactionsnon locales. Le résultat est alors un système d’équations aux dérivées partielles, décrivantl’équilibre et les conditions aux limites. La température est ensuite introduite de façon effectivedans les coefficients de ces équations. Notre modèle ressemble fortement aux modèlesde Landau.Une telle approche est appliquée dans les cubes quantiques et les couches minces óu l’organisationdes domaines dépend de la taille. Les résultats montrent l’implication de la méthodedes éléments finis sur la précision. La formation de vortex dans les cubes quantiquesest bien reproduite. L’agencement en domaines de polarisation alternée dans les couchesminces est elle aussi bien reproduite pour les couches minces. De plus en augmentant l’épaisseurde ces couches minces, la périodicité de cet agencement alterné est modifié, comportementdécrit par la loi de Kittel qui est ici calculée et comparée aux résultats expérimentaux. / Physicals properties of ferroelectric materials mainly arise from the fact that the polarizationis strongly influenced by strain and electrical boundary conditions, which may changeits orientation and magnitude. At small scales, this influence is even stronger and unusualdomain structures are produced like vortices in quantum dots or stripes in thin films. For thecalculation of domain structures, at small scales, first-principle-based effective Hamiltonianare widely used whereas at higher scales, continuum models are predominants. Nevertheless,in between there is no computational method connecting both scales. Therefore„ thegoal of this dissertation is to develop and build new approaches in order to bridge these twoseparated scales.Our model stems for classical effective Hamiltonian, written for barium titanate as afunction of the polarization and strain. This Hamiltonian is then formulated in order tocorrespond to a continuous description. Difficulties arise from non local interactions. In theend, the Hamiltonian is transformed into a set of partial differential equations describing theequilibrium and the boundary conditions. The temperature is then introduced in such a waythat makes evolve the coefficients of those sets of equations. We therefore reconstructed aLandu-like model.Such approach can be applied in quantum dots and thin films where the domain organizationdepend on the size. The results show how to apply finite element in order to obtainpatterns of polarizations with the wanted precision. The vortices shapes of domain patternin quantum dots is well reproduced. The stripes-like polarization pattern is also well reproducedin thin films. Besides expanding thickness of those films change the periodicity ofthose stripes, behaviour described by the Kittel law. This law is calculated and compared tomeasurements.

O objetivo desta dissertação é estudar os efeitos estruturais e eletrônicos em fulerenos menores e C60 causados pela dopagem substitucional com boro e nitrogênio para aplicações em eletrônica molecular. Estudamos as propriedades eletrônicas e estruturais de possíveis retificadores moleculares formados por pares de fulerenos menores dopados com boro e nitrogênio. A molécula C@C59N foi estudada e suas propriedades estruturais e eletrônicas comparadas com as do endofulereno N@C60. No estudo da dopagem dos fulerenos utilizamos o método semiempírico Parametric Method 3 (PM3). Foram calculadas as geometrias de equilíbrio e os calores de formação, que serviram para investigar a estabilidade relativa dessas moléculas. Para cada dopante identificamos os sítios de substituição que mais favorecem à estabilidade termodinâmica das moléculas. Dentre todos os fulerenos menores estudados os isômeros do C5o atingiram a maior estabilidade quando comparados com o C60. Com os pares de moléculas mais estáveis obtidas no trabalho anterior, montamos os retificadores em uma estrutura do tipo D-ponte-A, onde D e A representam doador e aceitador de elétrons. Para as moléculas isoladas, calculamos as estruturas eletrônicas através da Teoria do Funcional da Densidade (DFT) com o funcional BLYP e a base 6-31G*. No caso dos pares usamos o método DFT com o funcional BSLYP e a base 3-21G* para obter as geometrias de equilíbrio e as estruturas eletrônicas. Aplicando um campo elétrico sobre as moléculas, investigamos a facilidade de transferência de cargas entre fulerenos. Concluímos que fulerenos menores possuem um grande potencial para construção de um diodo molecular. As propriedades da molécula hipotética C@C59N foram comparadas com as bem Conhecidas C60, C59N e N@C60. A energia de ligação por átomo da molécula é comparável às energias de ligação dos outros fulerenos, em particular do seu isômero N@C60. Devido à tendência dos azafulerenos em formar dímeros, verificamos a estabilidade da molécula N@C60 quando comparada com o dímero N@C60 )2. . Tanto as geometrias quanto as estruturas eletrônicas foram calculados via DFT, BSLYP/6-31G*. Concluímos deste estudo que a molécula C@Ge¡/ é estável energeticamente, como também a interessante possibilidade do uso do dímero (C@C59N)2 como um bit quântico. / The present dissertation is devoted to the study of the effects on small fullerenes and 060 caused by the substitutional doping of boron and nitrogen for applications in molecular electronics. Electronic and structural properties of molecular rectifiers formed by small fullerenes doped with boron and nitrogen have been studied. The molecule C@C59 N has been investigated and its structural and electronic properties compared with those of the endofullerene N@C60 To study the doping of the fullerenes we used the semiempirical method Para­ metric Method 3 (PM3). Ground state conformations and heats of formation were obtained and used to investigate the relative molecular stability. We indentified the most favorable molecular substitution sites for the thermodynamic stability of each dopant. Among all small fullerenes investigated, the isomers of C50reached the largest stability when compared with 060 Molecular rectifiers with a structure of the type D-bridge-A, where D and A indicate electron donor and acceptor, respectively, were built with the most stable pairs found in the previous part of. The Density Functional Theory (DFT) with the functional BLYP and the base 6-31G* was used to calculate the electronic struc­ tures of the isolated molecules. Geometry optimizations and electronic structures of the pairs, were carried by DFT, B3LYP j3 21G*, method. The asymmetry of the charge transfer was assessed through the application of an externai electric field. We concluded that small fullerenes are promising candidates for the construction of molecular rectifiers. The properties of the hypothetical molecule C@C59 N were compared with those well known C60 , C59 N e N@C60 molecules. The binding energy of this molecule is comparable with that of the other fullerenes, in particular with that of its isomer N@C60 Due to the tendency of the azafullerene in forming dimers, the stability of the dimer (C@C59 N)2 was investigated. The molecular conformations and the electronic structures were obtained by the DFT, B3LYP/6-31G*, method. We con­ cluded that (C@C59 N) 2 molecule should be as stable as the azafullerene dimer. Our results point to the interesting possibility of using this system as a quantum bit.

Neste trabalho foram realizadas simulações computacionais para investigar as propriedades eletrônicas de nanossistemas baseados em nanotubos de carbono e grafeno por meio de cálculos de primeiros princípios. Um dos nanossistemas investigados é formado por um nanotubo de carbono acoplado a eletrodos de nanofios de paládio encapsulados. Foi mostrado que estados provenientes dos eletrodos interagem fortemente com os estados do nanotubo de carbono. Cálculos de transporte eletrônico foram realizados para investigar a potencialidade desse nanossistema em aplicações como transistor de efeito de campo. Foi mostrado que a intensidade da corrente elétrica desse nanossistema pode ser variada com o campo elétrico de gate. Outro trabalho desenvolvido no presente trabalho tem como base um nanossistema formado pelo grafeno depositado nos substratos SiO2 amorfo e h-BN. Foi determinada a energia de adsorção e a quantidade de carga transferida para investigar a influênicas desses substratos na adsorção da molécula de H2 pelo grafeno. Foi mostrado que a energia de adsorção da molécula de H2 adsorivda na interface grafeno/SiO2 amorfo é menor em comparação com o grafeno suspenso ou disposto sobre o substrato h-BN. Além disso, a adsorção do H2 nessa região resulta em uma transferência de carga de uma ordem de grandeza maior em comparação com a adsorção no grafeno suspenso, sendo observado um deslocamento do Cone de Dirac em relação ao nível de Fermi. Esse estudo poderá contribuir para a construção de futuros sensores de H2 à base de grafeno. / In this work, ab initio calculations were performed within DFT framework to analyse electronic properties of Carbon nanotubes and grapheme nano systems. In this work, computer simulations were performed to investigate the electronic properties of nanosystems based on carbon nanotubes and graphene within DFT framework. One of these systems studied is a Carbon nanotube semiconductor coupled to encapsulated leads of Pd nanowires. It has been shown that leads states interact strongly with the carbon nanotube states. Electronic transport calculations were performed to unfold new applications of this system, such as the field effect transistor. We noticed that charge current intensity can be tuned by electrical field. We also described the influence of amorphous SiO2 and h-BN, in H2 energy adsorption and charge transfer, where both materials are used as graphene substrates. It was shown that the latter adsorption energy in the graphene/Si02 is smaller than graphene/h-Bn and the graphene suspended itself. In fact this adsorption results in a charge transference one order greater than in the suspended graphene, which can be seen as a vertical shift of the Dirac Cone. This study may improve the construction of future H2 sensors based on graphene.