Title: Transport and optical properties of CdTe/CdZnTe single crystals Author: Štěpán Uxa Department: Institute of Physics of Charles University Supervisor: Assoc. Prof. Eduard Belas, PhD, Institute of Physics of Charles University Abstract: The thesis is focused on a study of internal electric field and temperature dependence of the absorption edge of CdTe and CdZnTe samples. In the first part of the thesis the transient-current technique (TCT) is used for investigations of electric fields within planar radiation detectors. The original comprehensive theory that links together TCT measurements with measurements of detector's charge-collection efficiency (CCE) is presented. This approach results in the development of two new iterative methods for processing of experimental data which can be used in any situation when the internal electric field can be approximated by a linear profile. In the second part of the thesis high temperature measurements of transmittance of thin polished CdTe samples are presented, leading to the estimation of the temperature dependence of the bandgap energy from calculated spectra of absorption coefficient. This is for the first time when measurements in a Cd overpressure have been performed which significantly reduces sample sublimation. Keywords: CdTe, transient-current technique,...

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To cope with energy requirements the utilization of renewable energies, particularly the Sun supplies the biggest and abundant energy source in Earth. Photo-voltaic and solar cell are the well advance and burning technology and a field of hot research. Majority of research centers and universities are working in this field. 1G, 2G, 3G and next generation of photo-voltaic cells have been developed and still to improve its efficiency and to decrease it 0.2 $/W cost. Our work mainly based on the theoretical and physical analysis of thin-film Photovoltaic devices. We will explore different software used for the analysis of PV cells, and will analyse different simulation related to solar cells like open circuit voltage VOC, Short circuit current JSC, Fill Factor FF (%) and external Quantum efficiency (%) for thin film solar cell including CIGS, CIS, CGS, CdTe, SnS/CdS/ZnO etc. To have different analysis for different combination and different replacement for materials used in the solar cell fabrication. To cope with the PV cost and environmental hazards we have to find alternate solutions. / Ullah, H. (2015). Simulation studies of photovoltaic thin film devices [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/48800

This thesis describes the development of a fast rate method for the deposition of high quality CdS and CdTe thin films. The technique uses Pulsed DC Magnetron Sputtering (PDCMS). Surprisingly, the technique produces highly stable process conditions. CREST is the first laboratory worldwide to show that pulsed DC power may be used to deposit CdS and CdTe thin films. This is a very promising process technology with potential for eventual industrial deployment. The major advantage is that the process produces high deposition rates suitable for use in solar module manufacturing. These rates are over an order of magnitude faster than those obtained by RF sputtering. In common with other applications it has also been found that the energetics of the pulsed DC process produce excellent thin film properties and the power supply configuration avoids the need for complex matching circuits. Conventional deposition methodologies for CdS, Chemical Bath Deposition (CBD) and CdTe thin films, Electrodeposition (ED), have been chosen as baselines to compare film properties with Pulsed DC Magnetron Sputtering (PDCMS). One of the issues encountered with the deposition of CdS thin films (window layers) was the presence of pinholes. A Plasma cleaning process of FTO-coated glass prior to the deposition of the CdS/CdTe solar cell has been developed. It strongly modifies and activates the TCO surface, and improves the density and compactness of the deposited CdS thin film. This, in turn, improves the optical and morphological properties of the deposited CdS thin films, resulting in a higher refractive index. The pinhole removal and the increased density allows the use of a much thinner CdS layer, and this reduces absorption of blue spectrum photons and thereby increases the photocurrent and the efficiency of the thin film CdTe cell. Replacing the conventional magnetic stirrer with an ultrasonic probe in the chemical bath (sonoCBD) was found to result in CdS films with higher optical density, higher refractive index, pinhole and void-free, more compact and uniform along the surface and through the thickness of the deposited material. PDCMS at 150 kHz, 500 W, 2.5 μs, 2 s, results in a highly stable process with no plasma arcing. It allows close control of film thickness using time only. The CdS films exhibited a high level of texture in the <001> direction. The grain size was typically ~50 nm. Pinholes and voids could be avoided by reducing the working gas pressure using gas flows ii below 20 sccm. The deposition rate was measured to be 1.33 nm/s on a rotating substrate holder. The equivalent deposition rate for a static substrate is 8.66 nm/s, which is high and much faster than can be achieved using a chemical bath deposition or RF magnetron sputtering. The transmission of CdS can be improved by engineering the band gap of the CdS layer. It has been shown that by adding oxygen to the working gas pressure in an RF sputtering deposition process it is possible to deposit an oxygenated CdS (CdS:O) layer with an improved band gap. In this thesis, oxygenated CdS films for CdTe TF-PV applications have been successfully deposited by using pulsed DC magnetron sputtering. The process is highly stable using a pulse frequency of 150 kHz and a 2.5 μs pulse reverse time. No plasma arcing was detected. A range of CdS:O films were deposited by using O2 flows from 1 sccm to 10 sccm during the deposition process. The deposition rates achieved using pulsed DC magnetron sputtering with only 500 W of power to the magnetron target were in the range ~1.49 nm/s ~2.44 nm/s, depending on the oxygen flow rate used. The properties of CdS thin films deposited by pulsed DC magnetron sputtering and chemical bath deposition have been studied and compared. The pulsed DC magnetron sputtering process produced CdS thin films with the preferred hexagonal <001> oriented crystalline structure with a columnar grain growth, while sonoCBD deposited films were polycrystalline with a cubic structure and small grainy crystallites throughout the thickness of the films. Examination of the PDCMS deposited CdS films confirmed the increased grain size, increased density, and higher crystallinity compared to the sonoCBD CdS films. The deposition rate for CdS obtained using pulsed DC magnetron sputtering was 2.86 nm/s using only 500 W power on a six inch circular target compared to the much slower (0.027 nm/s) for the sonoChemical bath deposited layers. CdTe thin films were grown on CdS films prepared by sonoCBD and Pulsed DC magnetron sputtering. The results showed that the deposition technique used for the CdS layer affected the growth and properties of the CdTe film and also determined the deposition rate of CdTe, being 3 times faster on the sputtered CdS. PDCMS CdTe layers were deposited at ambient temperature, 500 W, 2.9 μs, 10 s, 150 kHz, with a thickness of approximately 2 μm on CdS/TEC10 coated glass. The layers appear iii uniform and smooth with a grain size less than 100 nm, highly compact with the morphology dominated by columnar grain growth. Stress analysis was performed on the CdTe layers deposited at room temperature using different gas flows. Magnetron sputtered thin films deposited under low gas pressure are often subject to compressive stress due to the high mobility of the atoms during the deposition process. A possible way to reduce the stress in the film is the post-deposition annealing treatment. As the lattice parameter increased; the stress in the film is relieved. Also, a changing the deposition substrate temperature had an effect on the microstructure of CdTe thin films. Increasing the deposition temperature increased the grain size, up to ~600 nm. CdTe thin films with low stress have been deposited on CdS/TEC10 coated glass by setting the deposition substrate temperature at ~200°C and using high argon flows ~ 70 sccm Ar. Finally, broadband multilayer ARCs using alternate high and low refractive index dielectric thin films have been developed to improve the light transmission into solar cell devices by reducing the reflection of the glass in the extended wavelength range utilised by thin-film CdTe devices. A four-layer multilayer stack has been designed and tested, which operates across the wavelength range used by thin-film CdTe PV devices (400 850 nm). Optical modelling predicts that the MAR coating reduces the WAR (400-850 nm) from the glass surface from 4.22% down to 1.22%. The application of the MAR coating on a thin-film CdTe solar cell increased the efficiency from 10.55% to 10.93% or by 0.38% in absolute terms. This is a useful 3.6% relative increase in efficiency. The increased light transmission leads to improvement of the short-circuit current density produced by the cell by 0.65 mA/cm2. The MAR sputtering process developed in this work is capable of scaling to an industrial level.

Les détecteurs gamma semi-conducteurs monolithiques pixellisés en CdTe et CdZnTe sont amenés à remplacer les détecteurs à base de scintillateur pour des applications médicales, notamment pour la tomographie d'émission de photons uniques (SPECT). Outre la compacité, ils présentent de meilleures performances spectrométriques : la résolution en énergie, l'efficacité de détection, et la résolution spatiale. De plus, la profondeur d'interaction des photons dans le cristal peut être mesurée. <br />Ce travail a consisté à étudier expérimentalement et par simulation, les corrélations entre le pas des anodes, les propriétés physiques des matériaux (résistivité et propriétés de transport des électrons) et les performances spectrométriques des détecteurs. Nous avons comparé plusieurs méthodes de mesure de la profondeur d'interaction des photons et avons obtenu une résolution en énergie à 122 keV comprise entre 1.7 % et 7 %, selon le matériau, pour 5 mm d'épaisseur. Le partage de charges entre les anodes des détecteurs a été étudié et un traitement des informations mesurées est proposé.

L'objectif de ce travail est d'élaborer des méthodes peu chères pour produire des matériaux semi-conducteurs pouvant entrer dans la fabrication de cellules solaires de type "eta" (extremely thin absorber). Ces cellules sont constituées d'une couche extrêmement fine d'un absorbeur inorganique dont la bande interdite est situé entre 1.1 et 1.8 eV placée entre deux nanostructures transparentes l'une de type n et l'autre de type p et dont les bandes interdites doivent être supérieurs à 3.3 eV. Une couche compacte et des nanofils de ZnO ont été préparés en mode galvanostatique. Les dimensions des nanofils ont été contrôles à l'aide de la couche compacte et de la densité du courant appliqué. La photosensibilisation des nanofils par des couches uniformes de CdS, CdSe et CdTe prÈparÈe par la méthode SILAR (Successive Ionic Layer Adsorption and Reaction) a été étudiée. Les propriétés de ces couches ont été améliorées par recuit et traitement chimique. En ce qui concerne les fines coquilles de CdTe deux autres méthodes de sensibilisation ont été également étudiées : la CSS (Close Space Sublimation) et les QDs (Quantum Dots). La première méthode conduit à un faible recouvrement alors que la seconde produit un matériau mal défini optiquement. Les hétérostructures formées sur les nanofils ont été complétées par une couche de CuSCN, un semi-conducteur de type p, préparée par trois méthodes différentes. L'influence de la morphologie de ces couches sur les propriétés des cellules eta a été étudiée. Les films préparés par électrodéposition et SILAR sont plus rugueux que ceux obtenus par imprégnation et leur conductivité est moins bonne. Les hétérostructures (avec CdS et CdSe comme absorbeurs) ont été testées dans une cellule photoélectrochimique et les rendements obtenus (jusque 2%) montrent une amélioration certaine des propriétés de ces matériaux préparée par SILAR-modifiée ainsi que des interfaces ZnO/absorbeur. La qualité des matériaux obtenus par SILAR montre qu'aujourd'hui on peut s'attendre à une Renaissance de cette technique.

Biomedicine has recently exploited many nanotechnology platforms for the detection and treatment of disease as well as for the fundamental study of cellular biology. A prime example of these successes is the implementation of semiconductor quantum dots in a wide range of biological and medical applications, from in vitro biosensing to in vivo cancer imaging. Quantum dots are nearly spherical nanocrystals composed of semiconductor materials that can emit fluorescent light with high intensity and a strong resistance to degradation. The aim of this thesis is to understand the fundamental physics of colloidal quantum dots, to engineer their optical and structural properties for applications in biology and medicine, and to examine the interaction of these particles with biomolecules and living cells. Toward these goals, new synthetic strategies for colloidal nanocrystals have been developed, implementing a cation exchange method for independent tuning of size and fluorescence, and a bandgap engineering technique that utilizes mechanical strain imposed by coherent shell growth. In addition, stable nanocrystals have been prepared with ultrathin coatings (< 2 nm), 'amphibious' solubility, and broadly tunable bioaffinity, induced by self-assembly with polyhistidine-sequences on recombinant proteins. Finally, colloidal quantum dots have been studied in biological fluids and living cells in order to elucidate their interactions with biological systems. It was found that these interactions are strongly dependent on the size of the nanocrystal, and cytotoxic effects of these particles are largely independent of their composition of heavy metal atoms, demonstrating that the rule book for toxicology must be rewritten for nanomaterials.