Described herein are two projects focusing on developing and investigating two types of nanoparticles (NPs) grown by the seeded growth method from a conducting metallopolymer for photovoltaic (PV) applications. Core/shell CdS/ZnS NPs are proven to resist the photo-oxidation of PV devices, while CuInxGa(1-x)Se2 (CIGS) NPs are expected to optimize the efficiency of PV devices. / text

In this work, pricing models of corporate coupon-bonds and credit default swaptions are derivedand analyzed. Corporate coupon-bonds are priced incorporating both intensity models and structural models, and also jumps introduced by seasonal effects. In deriving the models, we form portfolios to hedge the risk incurred by the instruments, then derive PDE equations using the arbitrage principle and the Ito Lemma for jump processes. The mathematical models are the parabolic-type PDE equations with terminal conditions and boundary conditions. These PDE problems are analyzed and solved by various transformations and incorporation with probabilistic properties. Either a unique solution in the exponential form is obtained, or a particular solution in the separation formis acquired. Further, the pricing model of credit default swaptions is derived using the pricing of corporate coupon-bonds in the similar manner. The main idea of deriving the price of credit default swaptions is to use the price of existing products, i.e., corporate bonds, as opposed to the existing models, which use non-existing forward credit default swap price of the reference entity. The prices of corporate coupon-bonds and credit default swaptions with unexpected default, obtained from these models, are compared to the actual market prices and analyzed.

This dissertation consists of three essays on credit risk models and their Bayesian estimation. In each essay, defaults or default correlation models are built under one of two main streams. In our first essay, sequential estimation on hidden asset value and model parameters estimation are implemented under the Black-Cox model. To capture short-term autocorrelation in the stock market, we assume that market noise follows a mean reverting process. For estimation, two Bayesian methods are applied in this essay: the particle filter algorithm for sequential estimation of asset value and the generalized Gibbs sampling method for model parameters estimation. The first simulation study shows that sequential hidden asset value estimation using option price and equity price is more efficient and accurate than estimation using only equity price. The second simulation study shows that by applying the generalized Gibbs sampling method, model parameters can be successfully estimated under the model setting that there is no closed-form solution. In an empirical analysis using eight companies, half of which are DowJones30 companies and the other half non-Dow Jones 30 companies, the stock market noise for the firms with more liquid stock is estimated as having smaller volatility in market noise processes. In our second essay, the frailty idea described in Duffie, Eckner, Horel, and Saita (2009) is expanded to industry-specific terms. The MCEM algorithm is used to estimate parameters and random effect processes under the condition of unknown hidden paths and analytically-difficult likelihood functions. The estimate used in the study are based on U.S. public firms between 1990 and 2008. By introducing industry-specific hidden factors and assuming that they are random effects, a comparison is made of the relative scale of within- and between-industries correlations. A comparison study is also developed among a without-hidden-factor model, a common-hiddenfactor model, and our industry-specific common-factor model. The empirical results show that an industry-specific common factor is necessary for adjusting over- or under-estimation of default probabilities and over- or under-estimation of observed common factor effects. Our third essay combines and extends works of the first two essays by proposing a common model frame for both structural and intensity credit risk models. The common model frame combines the merits of several default correlation studies which are independently developed under each model setting. Following the work of Duffie, Eckner, Horel, and Saita (2009), we apply not only observed common factors, but also un-observed hidden factor to explain the correlated defaults. Bayesian techniques are used for estimation and generalized Gibbs sampling and Metropolis-Hasting (MH) algorithms are developed. More than a simple combination of two model approaches (structural and intensity models), we relax the assumptions of equal factor effect across entire firms in previous studies, instead adopting a random coefficients model. Also, a novelty of the approach lies in the fact that CDS and equity prices are used together for estimation. A simulation study shows that the posterior convergence is improved by adding CDS prices in estimation. Empirical results based on daily data of 125 companies comprising CDS.NA.IG13 in 2009 supports the necessity of such relaxations of assumption in previous studies. In order to demonstrate potential practical applications of the proposed framework, we derive the posterior distribution of CDX tranche prices. Our correlated structural model is successfully able to predict all the CDX tranche prices, but our correlated intensity model results suggests the need for further modification of the model. / Statistics

Educational compact discs or CD-ROM's are appearing more frequently in the classroom. An educational science laboratory safety CD was developed at the University of Lethbridge in 1994. This case study is an evaluation of the U. of L. safety CD to determine how well the disc facilitates independent, student directed learning. The study involved forty four High School students at Matthew Halton Community School in Pincher Creek, Alberta. The students used the CD in Biology and Chemistry classes. The survey included observations, questionnaire, and interviews to solicit student reaction to the disc. Students agreed that the CD was easy to use and that it was well suited for independent learning. They also made suggestions for further improvements. / 1 compact disk ; 4 3/4 in.

In this research work, porous films on aluminum foil, with vertical through and through pores, were fabricated. The films were anodized at different applied voltages and the conditions were reported. In some cases, aluminum foil films were anodized under constant current conditions. Thicker aluminum films, referred to as aluminum tape in this thesis, were also anodized to get good porous films. While the porous alumina films using aluminum tape produced pores with good uniformity, the films did not produce through and through pores. Porous alumina films were also prepared on aluminum evaporated ITO substrate. The films on ITO substrate were different from the porous alumina films using aluminum foil/tape. In case of ITO substrate based films, an additional condition, temperature was also varied. The anodization process on ITO substrate based films was done at lower temperatures in order to reduce the effect of high currents on the process. The SEM images for different anodization conditions were compared and the porosity of films was calculated. CdS was electrodeposited inside porous alumina. D.C as well as a.c. voltages were applied and duration of the process was varied to study their effect on film morphology and the thickness of the deposited CdS. The current-voltage characteristics of the CdS-deposited alumina films were plotted and the phase of the electrodeposited CdS was found to be hexagonal using XRD.

In this study, InSe and CdS thin films were deposited by thermal evaporation method onto glass substrates. Schottky and heterojunction devices were fabricated by deposition of InSe and CdS thin films onto SnO2 coated glass substrates with various top metal contacts such as Ag, Au, In, Al and C. The structural, electrical and optical properties of the films were investigated prior to characterization of the fabricated devices. The structural properties of the deposited InSe and CdS thin films were examined through SEM and EDXA analysis. XRD and electrical measurements have indicated that undoped InSe thin films deposited on cold substrates were amorphous with p-type conductivity lying in the range of 10-4-10-5 (&amp / #61527 / .cm)-1 at room temperature. Cd doping and post-depositional annealing effect on the samples were investigated and it was observed that annealing at 100 oC did not show any significant effect on the film properties, whereas the conductivity of the samples increased as the Cd content increases. Temperature dependent I-V and Hall effect measurements have shown that conductivity and carrier concentration increases with increasing absolute temperature while mobility is almost temperature independent in the studied temperature range of 100-430 K. The structural and electrical analysis on the as-grown CdS thin films have shown that the films were polycrystalline with n-type conductivity. Temperature dependent conductivity and Hall effect measurements have indicated that conductivity, mobility and carrier concentrations increases with increasing temperature. Transmission measurements on the as-grown InSe and CdS films revealed optical band gaps around 1.74 and 2.36 eV, respectively. Schottky diode structures in the form of TO/p-InSe/Metal were fabricated with a contact area of around 8x10-3 cm2 and characterized. The best rectifying devices obtained with Ag contacts while diodes with Au contacts have shown slight rectification. The ideality factor and barrier height of the best rectifying structure were determined to be 2.0 and 0.7 eV, respectively. Illuminated I-V measurements revealed open-circuit voltages around 300 mV with short circuit current 3.2x10-7 A. High series resistance effect was observed for the structure which was found to be around 588 &amp / #61527 / . Validity of SCLC mechanism for Schottky structures was also investigated and it was found that the mechanism was related with the bulk of InSe itself. Heterostructures were obtained in the form of TO/n-CdS/p-InSe/Metal and the devices with Au and C contacts have shown the best photovoltaic response with open circuit voltage around 400 mV and short circuit current 4.9x10-8 A. The ideality factor of the cells was found to be around 2.5. High series resistance effect was also observed for the heterojunction devices and the fill factors were determined to be around 0.4 which explains low efficiencies observed for the devices.

Η τρέχουσα χρηματοπιστωτική κρίση, έδωσε τη δυνατότητα σε μεγάλο αριθμό ερευνητών να προσπαθησουν να ερμηνεύσουν συγκεκριμένες διαδικασίες που εμφανίζονται σε αυτή την κατάσταση. Ενδιαφέρον αποτελεί η σχέση μεταξύ κρατικών ομολόγων και των CDS. Η ακόλουθη εργασία θα προσπαθήσει μέσα από θεωρητική και εμπειρική ανάλυση να μελετήσει το ασφάλιστρο κινδύνου μεταξύ των δύο μέσων με τη χρήση της θεωρητικών οικονομετρικών μεθόδων. / The current financial crisis, has enabled a large number of researchers trying to interpret specific processes that occur in it. Such interest is the relationship between government bonds and CDS. The following study will attempt to theoretical and empirical study of co-movements of the spread between the two instruments with the use of theoretical econometric methods.

This thesis consists of three chapters on macroeconomics and international economics. The first studies the effectiveness of macroprudential policies in a New Keynesian dynamic stochastic general equilibrium framework with financial frictions. Profit-maximizing banks with endogenous leverage ratio expand credit lending during economic booms and become increasingly vulnerable to unanticipated economic shocks. Countercyclical macroprudential instruments are found to be effective in dampening economic fluctuations and stabilizing the credit cycle. However, a policy regulating the loan-to-value ratio of the residential households causes a credit shift towards the business sector. Optimal simple rules are selected using welfare analysis to provide practical implications for the evaluation, estimation and future implementation of macroprudential policies in alleviating economic risk of financial intermediaries. The second chapter examines the impact of political risk on sovereign default. An economic model with endogenous default decisions shows that political instability increases the likelihood of sovereign default. A quantitative analysis using data from 68 countries in the period from 1970 to 2010 finds that both short and long-run aspects of the political environment have significant effects. The findings suggest that a country is more likely to experience default when i) it has a relatively younger political regime in place; ii) it faces a higher chance of political turnover; and iii) it has a less democratic political system. The third chapter investigates the bidirectional relationship between banking and sovereign debt crisis. An economic model with financial intermediaries and a government sector shows that sovereign default may cause a banking crisis as banks hold a large amount of government bonds. Nevertheless, a significant amount of bailouts or bank guarantees may constrain the short-term liquidity of the government sector and trigger a sovereign debt crisis. Empirical studies using the credit default swap spreads of the Eurozone support the two-way linkage. Quantitative results also show increasing spillover effects across borders as globalization leads to greater integration of financial markets.

Com o advento das teorias regionalista, de ameaças transnacionais, além de problemas e soluções estrategicamente sensíveis às constituições históricas, surge a necessidade de uma cooperação que una os Estados de uma determinada região, tornando-os fortes e coesos tanto internamente quanto perante o sistema internacional. Desta forma, objetivando-se enfrentar os desafios à política de segurança nos níveis regional e internacional, busca-se a cooperação em defesa. Com a complexidade das alianças estratégicas de segurança e defesa, nota-se um movimento de medidas interestatais, em que os Estados desejam consolidar novas vias para o progresso cooperativo, sendo o Conselho de Defesa Sul-Americano (CDS), da União de Nações Sul-Americanas (UNASUL), uma delas. A proposta de formação de um conselho sub-regional de defesa fez-se a partir da justificativa de enriquecimento dos mecanismos de cooperação militar e extensão do nível de confiança mútua a toda à região. Contudo, mesmo ponderando sua criação recente, em 2008, o CDS constitui um avanço relativamente baixo para os processos cooperativos na região sul-americana, especialmente quando analisadas suas vertentes: político-institucional, cooperação militar e Forças Armadas e indústria e tecnologia de defesa. / Con el desarrollo de las teorías regionalistas, de las amenazas transnacionales y de problemas y soluciones estratégicamente sensibles a las constituciones históricas, existe la necesidad de una cooperación que junte los Estados de una región determinada, haciéndolos fuertes y cohesivos en el nivel interno y del sistema internacional. Por lo tanto, con el objetivo de afrontar los desafíos a la política de seguridad al nivel regional e internacional, se busca la cooperación en defensa. Con la complejidad de las alianzas estratégicas de seguridad y de defensa, hay un movimiento de medidas interestatales, en que los Estados desean consolidar nuevas vías para el progreso de la cooperación, y el Consejo de Defensa Suramericano (CDS), de la Unión Suramericana de Naciones (UNASUR), es una de esas. La propuesta de formación de un Consejo de Defensa subregional fue compuesta por medio de la justificativa de enriquecimiento de los mecanismos de cooperación militar y de extensión del nivel de confianza mutua a toda la región. Sin embargo, aún reflexionando sobre su reciente creación, en 2008, el CDS constituí un relativo bajo avanzo en los procesos de cooperación en la región suramericana, especialmente cuando se analizan sus aspectos: político-institucional, cooperación militar y Fuerzas Armadas, y industria y tecnología de defensa.

NEVES, Wellington de Queiroz. Caracterização ótica e estrutural de filmes de CdS depositados por banho químico. 2013. 79 f. Dissertação (Mestrado em Física) - Programa de Pós-Graduação em Física, Departamento de Física, Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2013. / Submitted by Edvander Pires (edvanderpires@gmail.com) on 2015-10-23T18:58:00Z No. of bitstreams: 1 2013_dis_wqneves.pdf: 2637234 bytes, checksum: abe116493230fe2c301fd4d61f25b006 (MD5) / Approved for entry into archive by Edvander Pires(edvanderpires@gmail.com) on 2015-10-23T19:37:34Z (GMT) No. of bitstreams: 1 2013_dis_wqneves.pdf: 2637234 bytes, checksum: abe116493230fe2c301fd4d61f25b006 (MD5) / Made available in DSpace on 2015-10-23T19:37:34Z (GMT). No. of bitstreams: 1 2013_dis_wqneves.pdf: 2637234 bytes, checksum: abe116493230fe2c301fd4d61f25b006 (MD5) Previous issue date: 2013 / Neste trabalho estudamos as propriedades óticas de filmes de sulfeto de cádmio (CdS) crescidos sobre um substrato de vidro. Os filmes foram obtidos por meio da técnica de deposição por banho químico (Chemical Bath Deposition, CBD). Os filmes de CdS são preparados numa solução aquosa, sob agitação, a uma temperatura de 80 oC durante 60 minutos sobre substrato de vidro. Alguns dos filmes foram obtidos com duplo depósito em dois banhos sucessivos iguais. Como fonte de íons de cádmio é usado sulfato de cádmio (CdSO4,) como fonte de íons de enxofre é usado a tioureia, como tampão é usado cloreto de amônia, e como agente complexante o Ethylenediamine tetra acetic acid (Edta) em várias concentrações. Após o crescimento, os filmes foram submetidos a um tratamento térmico no ar nas temperaturas de 300 ou 400 oC por uma hora. Foram realizadas medidas experimentais usando a técnicas de difração de raios-X, fototransmissão ótica UV-VIS e espectroscopia Raman. Os filmes de CdS obtidos possuem estrutura cúbica e são de coloração amarelada, homogêneos e muito aderentes ao substrato de vidro. São analisados os efeitos da concentração de Edta, tratamento térmico no ar, tempo de deposição e temperatura de crescimento dos filmes de CdS. Nossos resultados mostram que, sob as condições estudadas, os filmes de CdS não possuem fase hexagonal em sua estrutura. O gap dos filmes de CdS está em torno de 2,45 eV, com pequenas variações (2,40 – 2,51 eV) devido às condições experimentais de crescimento ou tratamento térmico após o crescimento. Observamos o modo LO, de simetria A1, em torno de 300 cm-1 e até três sobremodos desse fônon. Em alguns casos, os espectros Raman aparecem sobre uma larga fotoemissão, dependendo das condições experimentais.