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Non-Reciprocal Optical Amplification and Phase Shifts in a Nanofiber-Based Atom-Light Interface and a Precise Lifetime Measurement of the Cesium 5D_{5/2} StatePucher, Sebastian 15 December 2022 (has links)
Nanophotonische Systeme sind eine leistungsfähige Plattform für die Untersuchung von Licht-Materie-Wechselwirkungen. In solchen Systemen bricht die übliche Beschreibung einer elektromagnetischen Welle als eine Welle, die in Bezug auf ihre Ausbreitungsrichtung transversal polarisiert ist, zusammen. Dies ist auf die Einengung der geführten Lichtfelder zurückzuführen, welche zu einer longitudinalen Komponente der elektromagnetischen Felder führt. In dieser Arbeit nutzen wir dies in Verbindung mit unterschiedlichen Kopplungsstärken von Cäsiumatomen an \sigma^- und \sigma^+ polarisiertes Licht, um das Prinzip neuartiger nicht-reziproker optischer Bauelemente zu demonstrieren.
Im ersten Teil dieser Arbeit demonstrieren wir die nicht-reziproke Verstärkung von fasergeführtem Licht mit Hilfe von Raman-Verstärkung durch spinpolarisierte Cäsiumatome, die an die Nanofasertaille eines verjüngten Faserabschnitts gekoppelt sind. Wir zeigen, dass unser neuartiger Mechanismus kein externes Magnetfeld benötigt und dass wir die Richtung der Verstärkung vollständig über den atomaren Spinzustand kontrollieren können.
Darüber hinaus nutzen wir die chirale Licht-Materie-Wechselwirkung in unserem System, um einen nicht-reziproken antisymmetrischen optischen Phasenschieber zu realisieren. Diese Ergebnisse tragen zur Etablierung einer neuen Klasse von spin-gesteuerten, nicht-reziproken integrierten optischen Bauelementen bei und können den Aufbau komplexer optischer Netzwerke vereinfachen.
In einem weiteren Forschungsprojekt tragen wir zum grundlegenden Verständnis von Atomen bei, indem wir die Lebensdauer eines angeregten Cäsiumzustands präzise messen. Wir messen die Lebensdauer des Cäsium 5D_{5/2} Zustands im freien Raum. Wir finden eine Lebensdauer von 1353(5) ns, die mit einer aktuellen theoretischen Vorhersage übereinstimmt. Unsere Messung trägt dazu bei, eine seit langem bestehende Unstimmigkeit zwischen verschiedenen experimentellen und theoretischen Ergebnissen zu beseitigen. / Nanophotonic systems are a powerful platform for the study of light-matter interactions. In such systems, the common description of an electromagnetic wave as a wave that is transversely polarized with respect to its propagation direction breaks down. This is due to the tight confinement of the guided light fields, which leads to a longitudinal component of the electromagnetic fields. In this thesis, we use this in conjunction with different coupling strengths of cesium atoms to \sigma^- and \sigma^+ polarized light to provide proof-of-principle demonstrations of novel non-reciprocal optical devices.
In the first part of this thesis, we demonstrate non-reciprocal amplification of fiber-guided light using Raman gain provided by spin-polarized cesium atoms that are coupled to the nanofiber waist of a tapered fiber section. We show that our novel mechanism does not require an external magnetic field and that it allows us to fully control the direction of amplification via the atomic spin state.
Moreover, we use the chiral light-matter interaction in our system to implement a non-reciprocal antisymmetric optical phase shifter. These results contribute to establishing a new class of spin-controlled, non-reciprocal integrated optical devices and may simplify the construction of complex optical networks.
In an additional research project, we also contribute to the fundamental understanding of atoms by precisely measuring the lifetime of an excited cesium state. We measure the lifetime of the cesium 5D_{5/2} state in free space. We find a lifetime of 1353(5) ns, in agreement with a recent theoretical prediction. Our measurement contributes to resolving a long-standing disagreement between several experimental and theoretical results.
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In-depth Surface Studies of p-GaN:Cs Photocathodes by Combining Ex-Situ Analytical Methods with In-Situ X-Ray Photoelectron SpectroscopySchaber, Jana 21 June 2023 (has links)
The photocathode is one of the key components of particle accelerator facilities that provides electrons for experiments in many disciplines such as biomedicine, security imaging, and condensed matter physics. The requirements for the electron emitting material, the so-called photocathode, are rather high because these materials should provide a high quantum efficiency, a low thermal emittance, a fast response, and a long operational lifetime. At present, none of the state-of-the-art photocathodes can fully meet all the desired requirements. Therefore, new materials that can be used as potential photocathodes are urgently needed for future developments in accelerator research.
Semiconductor photocathodes such as cesium telluride are the preferred materials in particle accelerators. These photocathodes provide high quantum efficiencies of above 10 %, making them highly attractive. The crystal growth of cesium telluride, as a compound semiconductor photocathode, requires the deposition of cesium and tellurium on a suitable substrate with an ideal chemical ratio, which seems elaborate and difficult to handle.
In contrast, III-V semiconductors, such as gallium arsenide and gallium nitride (GaN), represent another type of semiconductor photocathode. These commercially available semiconductors are already grown on a substrate and only require a thin film of cesium and optional oxygen to obtain a photocathode. An atomically clean surface is necessary to achieve a negative electron affinity surface, which is the main prerequisite for high quantum efficiency.
In this work, p-GaN grown on sapphire by metal-organic chemical vapor deposition, was wet chemically cleaned, and transferred into an ultra-high vacuum chamber, where it underwent a subsequent thermal cleaning. The cleaned p-GaN samples were activated with Cs to obtain p-GaN:Cs photocathodes and their performance was monitored with respect to their quality, especially concerning their quantum efficiency and storage lifetime. The surface topography and morphology were examined ex-situ by atomic force microscopy and scanning electron microscopy in combination with energy dispersive X-ray spectroscopy.
Treatments at different temperatures resulted in various quantum efficiency values and storage lifetimes. Moderate temperatures of 400–500 °C were found to be more beneficial for the p-GaN surface quality, which was reflected by achieving higher quantum efficiency values. After the thermal cleaning, the samples were activated with a thin layer of cesium at an average pressure of 1 x E-9 mbar. The surface morphology was studied with scanning electron microscopy and energy dispersive X-ray spectroscopy after the samples were thermally cleaned and activated with cesium. The results showed that the surface appeared inhomogeneous when the samples were cleaned at a high temperature above 600 °C. A thermal cleaning from the back side through the substrate represented another possibility but did not yield higher quantum efficiency values.
An in-situ analysis method facilitates following and understanding the changes in the surface electronic states before, during, and after any treatment of p-GaN:Cs photocathodes. For this purpose, an X-ray photoelectron spectrometer was applied that was built into an ultra-high vacuum system to prepare and characterize photocathodes. It allowed the in-situ monitoring of the photocathode surfaces beginning immediately after their cleaning and throughout the activation and degradation processes.
The realization of the adaption of an X-ray photoelectron spectroscopy chamber to the preparation chamber presented a significant constructional challenge. Thus, this work paid special attention to the technical aspects of in-situ sample transportation between these chambers without leaving the ultra-high vacuum environment.
The p-GaN surface was cleaned with different solutions and studied by X-ray photoelectron spectroscopy and atomic force microscopy, revealing that cleaning with a so-called 'piranha' solution in combination with rinsing in ethanol works best for the p-GaN surface. A cleaning step that solely uses ethanol is also possible and represents a simple cleaning procedure that is manageable in all laboratories. Afterward, the cleaned p-GaN samples underwent a subsequential thermal vacuum cleaning at various temperatures to achieve an atomically clean surface. Each treatment step was followed by X-ray photoelectron spectroscopy analysis without leaving the ultra-high vacuum environment, revealing residual oxygen and carbon on the p- GaN surface. A thermal treatment under vacuum did not entirely remove these organic contaminations, although the thermal cleaning reduced their peak intensities. The remaining oxygen and carbon contaminants were assumed to be residuals derived from the metal-organic chemical vapor deposition process.
After the cesium activation, a shift toward a higher binding energy was observed in the X-ray photoelectron spectroscopy spectra of the related photoemission peaks. This shift indicated that the cesium was successfully adsorbed to the p-GaN surface. Before the cesium activation, adventitious carbon at a binding energy of approximately 284 eV was found, which was also present after the cesium activation but did not shift in its binding energy. It was also shown that the presence of remaining carbon significantly influenced the photocathode’s quality. After the cesium deposition, a new carbon species at a higher binding energy (approximately 286 eV) appeared in the carbon 1s spectrum. This new species showed a higher binding energy than adventitious carbon and was identified as a cesium carbide species. This cesium carbide species grew over time, resulting in islands on the surface. The X-ray photoelectron spectroscopy data facilitated the elucidation of the critical role of thiscesium carbide species in photocathode degradation.
Typically, the quantum efficiency of photocathodes decays exponentially. Conversely, an immense quantum efficiency loss was observed after the p-GaN:Cs photocathodes were studied by X-ray photoelectron spectroscopy. The origin of the quantum efficiency loss derived from X-rays as an external influence and was not caused by the sample’s transportation. Therefore, potential X-ray damages to the p-GaN:Cs photocathodes were investigated. These experiments showed that the adsorbed cesium and its adhesion to the p-GaN surface were strongly influenced by X-ray irradiation. The cesium photoemission peaks shifted toward a lower binding energy, while the relative cesium concentration did not. This shift indicated that X-ray irradiation accelerated the external aging of the p-GaN photocathodes and thus it was proposed to use lower X-ray beam power or cool the samples to prevent X-ray damage to cesiated photocathodes.
This work shows that an exclusive activation with cesium is feasible and that a re-activation of the same sample is possible. Quantum efficiency values of 1–12% were achieved when the p-GaN, grown on sapphire, was activated. The capability of an X-ray photoelectron spectroscopy analysis allowed the in-situ monitoring of the photocathode surface and shed light on the surface compositions that changed during the photocathodes’ degradation process.
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Electron Transfer and Other Reactions Using Atomic Metal AnionsButson, Jeffery M. 04 February 2014 (has links)
The atomic metal anions Rb-, Cs-, Cu-, Ag- and Fe- have been generated in the gas phase and reacted with various neutral reactants in a triple quadrupole mass spectrometer. The metal anions were formed via electrospray ionization of the metal-oxalate solutions and form in gas phase between the capillary and the first quadrupole. Neutral gas phase reactants investigated include NO, NO2, SO2, C6F5OH, C6F5NH2, C6F6, E-octafluoro-butene and 1,2,3/1,2,4/1,3,5 trifluoro-benzene. When possible, CBS-4M methods were used to suggest the lowest energy products based on relative energy. Observed reactions of atomic metal anions with the aforementioned neutral species include electron transfer and dissociative electron transfer to the neutral gas phase reactants. In addition, hydrogen abstraction and fluorine abstraction forming a neutral metal hydride or fluoride as well as the formation of multiply substituted metal-oxide/fluoride anions was also observed. Metal-complex anions observed from the gas phase reactions include CuF-,CuF2-,CuO-,CuO2-, FeO-, FeO2-, FeO3-, FeF-, FeF2-, FeF3-, CsF- and CsF2-.
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Electron Transfer and Other Reactions Using Atomic Metal AnionsButson, Jeffery M. January 2014 (has links)
The atomic metal anions Rb-, Cs-, Cu-, Ag- and Fe- have been generated in the gas phase and reacted with various neutral reactants in a triple quadrupole mass spectrometer. The metal anions were formed via electrospray ionization of the metal-oxalate solutions and form in gas phase between the capillary and the first quadrupole. Neutral gas phase reactants investigated include NO, NO2, SO2, C6F5OH, C6F5NH2, C6F6, E-octafluoro-butene and 1,2,3/1,2,4/1,3,5 trifluoro-benzene. When possible, CBS-4M methods were used to suggest the lowest energy products based on relative energy. Observed reactions of atomic metal anions with the aforementioned neutral species include electron transfer and dissociative electron transfer to the neutral gas phase reactants. In addition, hydrogen abstraction and fluorine abstraction forming a neutral metal hydride or fluoride as well as the formation of multiply substituted metal-oxide/fluoride anions was also observed. Metal-complex anions observed from the gas phase reactions include CuF-,CuF2-,CuO-,CuO2-, FeO-, FeO2-, FeO3-, FeF-, FeF2-, FeF3-, CsF- and CsF2-.
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Theoretical studies of slow collisions : elastic electron scattering from positive ions, charge transfer in one-electron ion-ion systems and mutual neutralization of Hâ»/Dâ» and Hâºâ‚‚Shepherd, Juliet January 2001 (has links)
No description available.
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Nuclear orientation of odd-A nuclei near to '1'3'2SNWhite, Gareth Nicholas January 1999 (has links)
No description available.
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Progress towards a new parity non-conservation measurement in cesium-133Yao De George Toh (6858197) 16 August 2019 (has links)
Atomic parity violation measurements provide a way to probe physics beyond the Standard Model. They can provide constraints on conjectures of a massive Z′ bosonor a light boson, or searches of dark energy. Using the two-pathway coherent control technique, our group plans to make a new measurement of the weak interaction induced parity non-conservation (PNC) transition moment (<i>E<sub>PNC</sub></i>) on the cesium 6S→7S transition. We will coherently interfere a 2-photon transition with the Stark and PNC transitions to amplify and extract the PNC amplitude. Previously, our lab has measured the magnetic dipole transition moment on the same 6S→7S transition to about 0.4% uncertainty using this technique. In this dissertation, I discuss improvements made to the system, and review what future upgrades are needed for a new<i> E</i><sub><i>PNC </i></sub>measurement. Key systematics are also described. For an accurate determination of <i>E<sub>PNC</sub></i>, properties of cesium such as the scalar (<i>α</i>) and vector (<i>β</i>) transition polarizabilities are needed. I present improved determinations of keyelectric dipole matrix elements, and calculate new high precision determinations of <i>α</i> and <i>β</i>. Finally, using <i>β</i> and the previously measured value of <i>E<sub>PNC</sub>/β</i>, I calculate new values for the weak charge of the cesium nucleus Q<sub>w</sub>.<br>
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Réalisation d'une source d'électrons par ionisation d'un jet d'atomes de césium refroidis par laser / Realization of an electron source by ionization of a laser-cooled cesium atomic beamKhalili, Guyve 10 July 2015 (has links)
Les faisceaux d’électrons et d’ions sont au cœur de nombreuses techniques instrumentales servant à explorer, analyser et agir sur des matériaux à l’échelle du micromètre au nanomètre (Microscopie électronique, spectrométrie d’électrons, techniques de « FIB »). Les limites de résolution spatiale et énergétique de ces techniques dépendent en grande partie des propriétés des sources qu’elles utilisent et en particulier de leur température de fonctionnement. De fait, depuis plus de 10 ans, le potentiel des atomes froids ionisés comme nouveau type de source d’électrons ou d’ions est intensivement exploré.Le projet expérimental réalisé au LAC et décrit dans cette thèse utilise un jet d’atomes de césium issu d’un piège magnéto-optique à deux dimensions. La température transverse du jet est de l’ordre de 100 µK. Malgré cela, le jet est encore trop divergent après la sortie de la zone de refroidissement pour notre expérience. Afin guider le jet d’atomes jusqu’à la zone d’ionisation, nous avons étudié une méthode particulière de guidage dipolaire. L’utilisation d’un seul laser convenablement réglé nous a permis de guider et pousser les atomes du jet en même temps tout en limitant le chauffage. Nous avons ainsi pu compresser avec ce laser pousseur-guideur le jet d’atomes sur un diamètre de 400 µm à 60 cm de la zone de refroidissement du PMO-2D.Le jet est ensuite ionisé par la méthode d’ionisation en champ électrique statique d’atomes de Rydberg. Les atomes sont tout d’abord excités par laser sur un état de Rydberg (n~30) en présence d’un champ électrique uniforme et homogène. Les atomes du jet ainsi excités voyagent vers une zone présentant un fort gradient de champ où ils vont alors s’ioniser autour de la même valeur de potentiel, réduisant ainsi la taille de la zone d’ionisation et donc de la dispersion en énergie potentielle initiale du faisceau d’électron. La probabilité d’ionisation des atomes dans le champ dépend grandement de l’état de Rydberg préalablement excité. Le choix de l’état de Rydberg optimal, i.e. qui a une probabilité d’ionisation la plus grande possible, nécessite une étude de l’ionisation des états de Rydberg du césium. Un modèle à deux niveaux est présenté dans cette thèse qui permet de retrouver le comportement d’ionisation d’état de Rydberg observé expérimentalement. Ce modèle simple nous a permis de comprendre quel type d’état nous devions exciter. Enfin une étude expérimentale est également présentée. / Electron and Ion beams are at the base of many instrumental techniques used to explore, to analyse and to modify materials from the micrometer to the manometer scale (Electronic Microscopy, Electron Spectrometry, Focused Ion beams techniques…). Spatial and Energetic resolutions of these techniques are strongly dependent on its source‘s properties and particularly their working temperature. In fact, for more than ten years, the potential of ionised cold atoms have been intensively studied. Our experiment at LAC, described in this thesis, uses a 2 dimensional magneto-optical trap (2D-MOT) to create a caesium atomic beam. The transverse temperature of the beam is around 100 µK. Despite this, the beam is still too divergent after exiting the cooling area. To guide the atomic beam up to the ionisation area, we have studied and implemented a particular method of dipolar guiding. The use of a unique laser properly set allowed us to push and guide altogether the atoms of the beam while limiting the heating effect. Thus, we have managed to compress the atomic beam’s size to 400 µm at 60 cm from the output of the MOT.Afterward, the atomic beam is ionised by the method of Rydberg (static) field ionisation. The atoms are firstly excited by laser on a Rydberg state (n~30) as a static homogeneous and uniform electric field is applied. The excited atoms of beam travel therefore to a high-gradient field area where they ionise around the same electric potential value, therefore reducing the ionisation area’s size and the initial potential energy spread of the electron beam. The ionisation probability of the atoms in the field depends greatly on the excited Rydberg state. The choice of an optimal Rydberg state , i.e. with the highest probability of ionisation, needs better knowledge of the ionisation of cesium Rydberg states. A two levels model us to describe the ionisation behaviour of some Ryberg. This simple models helps to understand what kind of states we want to excite in order to optimise the ionisation area‘s size. An experimental study of cesium Rydberg states is also presented.
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Estabilização de lasers de diodo para utilização em espectroscopia atômica. / Stabilization of diode lasers for use in atomic spectroscopy.Tuboy, Aparecida Marika 13 July 1990 (has links)
Um dos primeiros requisitos para utilização de lasers de diodo em espectroscopia é sua estabilização térmica. Neste trabalho desenvolvemos um sistema de controle de temperatura para laser de diodo que permite estabilização melhor que 0.01°C. O controle é feito através de um sistema sensor e um elemento Peltier como atuador. Lasers somente estabilizados em temperatura (estabilização primária) foram utilizados para realização de espectroscopia de vapores atômicos de Rb e Cs. / One of the first requisites for utilization of diode lasers in spectroscopy is its thermal stabilization. In this work, we develop a diode laser temperature controlling system, which yields stabilization better than 0.01°C. The controlling is obtained by means of a sensor system and a Peltier element as actuator. Lasers stabilized in temperature only (primary stabilizations) were utilized in the spectroscopy of atomic vapors of Rb and Cs.
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Desenvolvimento de cristais baseados em iodeto de Césio para aplicação como detectores de radiação / Development of crystals based in cesium iodide for application as radiation detectorsPereira, Maria da Conceição Costa 07 June 2006 (has links)
Cintiladores inorgânicos com tempo de decaimento de luminescência rápido, densidade alta e boa produção de luz têm sido objeto de estudos para aplicações em física nuclear, física de energias altas, tomografia nuclear e outros campos da ciência e da engenharia. Cristais de cintilação baseados em iodeto de césio (Csl) são materiais que apresentam higroscopia relativamente baixa, número atômico alto, fácil manuseio e custo baixo, características que favorecem o seu uso como detectores de radiação. Neste trabalho descreve-se a obtenção de cristais Csl puro, Csl:Br e Csl:Pb, utilizando-se a técnica de Bridgman. A concentração do elemento dopante bromo (Br) foi estudada no intervalo de 1,5x10-1 M a 10-2 M e o elemento chumbo (Pb) no intervalo de 10-2 M a 5x10-4 M. Para avaliar os cintiladores desenvolvidos foram efetuadas medidas sistemáticas de emissão de luminescência e tempo de decaimento de luminescência para a radiação gama, ensaios de transmitância óptica, ensaios de microdureza Vickers, determinações da distribuição dos dopantes ao longo dos cristais crescidos e análise da resposta dos cristais à radiação gama no intervalo de energia de 350 keV a 1330 keV e partículas alfa provenientes de fonte de 241Am com energia de 5,54 MeV. Os resultados obtidos de tempo de decaimento de luminescência para os cristais CsI:Br e CsI:Pb, no intervalo de 13 ns a 19 ns, mostraram-se promissores para medidas de alta energia. O estudo de microdureza mostrou um aumento significativo em função da concentração dos elementos dopantes, quando comparado ao cristal Csl puro, melhorando desta forma a resistência mecânica dos cristais crescidos. A validade de utilização desses cristais como sensores de radiação para medidas de radiação gama e partículas alfa, pode ser demonstrada pelos resultados da resposta à radiação. / Inorganic scintillators with fast luminescence decay time, high density and high light output have been the object of studies for application in nuclear physics, high energy physics, nuclear tomography and other fields of science and engineering. Scintillation crystals based on cesium iodide (CsI) are matters with relatively low higroscopy, high atomic number, easy handling and low cost, characteristics that favor their use as radiation detectors. In this work, the growth of pure CsI crystals, CsI:Br and CsI:Pb, using the Bridgman technique, is described. The concentration of the bromine doping element (Br) was studied in the range of 1,5x10-1 M to 10-2 M and the lead (Pb) in the range of 10-2 M to 5x10-4 M. To evaluate the scintillators developed, systematic measurements were carried out for luminescence emission and luminescence decay time for gamma radiation, optical transmittance assays, Vickers micro-hardness assays, determination of the doping elements distribution along the grown crystals and analysis of crystals response to the gamma radiation in the energy range of 350 keV to 1330 keV and alpha particles from a 241Am source, with energy of 5.54 MeV. It was obtained 13 ns to 19 ns for luminescence decay time for CsI:Br and CsI:Pb crystals. These results were very promising. The results obtained for micro-hardness showed a significant increase in function of the doping elements concentration, when compared to the pure CsI crystal, increasing consequently the mechanical resistance of the grown crystals. The validity of using these crystals as radiation sensors may be seen from the results of their response to gamma radiation and alpha particles.
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