Dans ce mémoire, des méthodes spectrales basées sur la transformée de Fourier rapide ("fast Fourier transform" en anglais notée "FFT") sont développées pour résoudre les équations de champs et d’évolution des densités de dislocations polarisées ou géométriquement nécessaires dans la théorie de la mécanique des champs de dislocations ("Field Dislocations Mechanics" en anglais et notée "FDM") et de son extension phénoménologique et mésoscopique ("Phenomenological Mesoscopic Field Dislocations Mechanics" en anglais et notée "PMFDM"). Dans un premier temps, une approche spectrale a été développée pour résoudre les équations élasto-statiques de la FDM pour la détermination des champs mécaniques locaux provenant des densités de dislocations polarisées et des hétérogénéités élastiques présentes dans les matériaux de microstructure supposée périodique et au comportement élastique linéaire. Les champs élastiques sont calculés de façon précise et sans oscillation numérique même lorsque les densités de dislocations sont concentrées sur un seul pixel (pour les problèmes à deux dimensions) ou sur un seul voxel (pour les problèmes à trois dimensions). Ces résultats sont obtenus grâce à l’application de formules de différenciation spatiale pour les dérivées premières et secondes dans l’espace de Fourier basées sur des schémas à différences finies combinées à la transformée de Fourier discrète. Les résultats obtenus portent sur la détermination précise des champs élastiques des dislocations individuelles de types vis et coin, et des champs élastiques d’interaction entre des inclusions de géométries variées et différentes distributions de densités de dislocations telles que les dipôles ou les boucles de dislocations dans un matériau composite biphasé et des microstructures tridimensionnelles. Dans un second temps, une approche spectrale a été développée pour résoudre de façon rapide et stable l’équation d’évolution spatio-temporelle des densités de dislocations dans la théorie FDM. Cette équation aux dérivées partielles, de nature hyperbolique, requiert une méthode spectrale avec des filtres passe-bas afin de contrôler à la fois les fortes oscillations inhérentes aux approches FFT et les instabilités numériques liées à la nature hyperbolique de l’équation de transport. La validation de cette approche a été effectuée par des comparaisons avec les solutions exactes et les méthodes éléments finis dans le cadre de la simulation des phénomènes physiques d’annihilation ou d’extension/annihilation de boucles de dislocations. En dernier lieu, une technique numérique pour la résolution des équations de la PMFDM est développée dans le cadre d’une formulation FFT pour un comportement élasto-visco-plastique avec la prise en compte de la contribution des dislocations géométriquement nécessaires et statistiquement stockées ainsi que des conditions de saut de la distorsion plastique aux interfaces de type joint de grains ou joint de phases. Cette technique est par la suite appliquée à la simulation de la déformation plastique de structures modèles telles que des microstructures périodiques à canaux et des polycristaux métalliques / Fast Fourier transform (FFT)-based methods are developed to solve both the elasto-static equations of the Field Dislocation Mechanics (FDM) theory and the dislocation density transport equation of polarized or geometrically necessary dislocation (GND) densities for FDM and its mesoscopic extension, i.e. the Phenomenological Mesoscopic Field Dislocations Mechanics (PMFDM). First, a numerical spectral approach is developed to solve the elasto-static FDM equations in periodic media for the determination of local mechanical fields arising from the presence of both polarized dislocation densities and elastic heterogeneities for linear elastic materials. The elastic fields are calculated in an accurate fashion and without numerical oscillation, even when the dislocation density is restricted to a single pixel (for two-dimensional problems) or a single voxel (for three-dimensional problems). These results are obtained by applying the differentiation rules for first and second derivatives based on finite difference schemes together with the discrete Fourier transform. The results show that the calculated elastic fields with the present spectral method are accurate for different cases considering individual screw and edge dislocations, the interactions between inhomogeneities of various geometries/elastic properties and different distributions of dislocation densities (dislocation dipoles, polygonal loops in two-phase composite materials). Second, a numerical spectral approach is developed to solve in a fast, stable and accurate fashion, the hyperbolic-type dislocation density transport equation governing the spatial-temporal evolution of dislocations in the FDM theory. Low-pass spectral filters are employed to control both the high frequency oscillations inherent to the Fourier method and the fast-growing numerical instabilities resulting from the hyperbolic nature of the equation. The method is assessed with numerical comparisons with exact solutions and finite element simulations in the case of the simulation of annihilation of dislocation dipoles and the expansion/annihilation of dislocation loops. Finally, a numerical technique for solving the PMFDM equations in a crystal plasticity elasto-viscoplastic FFT formulation is proposed by taking into account both the time evolutions of GND and SSD (statistically stored dislocations) densities as well as the jump condition for plastic distortion at material discontinuity interfaces such as grain or phase boundaries. Then, this numerical technique is applied to the simulation of the plastic deformation of model microstructures like channel-type two-phase composite materials and of polycrystalline metals

L'objectif de cette thèse porte sur la fabrication et la caractérisation de cellules solaires à jonction radiale à base d'assemblée de nanofils de silicium cristallin. Une étude sur la croissance des nanofils à partir de deux catalyseurs métalliques (cuivre et aluminium) dans une machine de dépôt chimique en phase vapeur (CVD) à pression réduite est présentée. L'influence des conditions de croissance sur la morphologie, le dopage et la contamination des nanofils par le catalyseur est analysée par des mesures électriques, chimiques (SIMS, Auger) et structurales (SEM, TEM, Raman). Le cuivre est utilisé pour la fabrication d'une cellule solaire avec des nanofils de type p et une jonction radiale créée avec du silicium amorphe de type n. Les performances photovoltaïques de la cellule solaire sont ensuite mesurées et interprétées. Un rendement de conversion de 5% est mesuré sur une cellule avec des nanofils de hauteur 1,5µm. / The objective of this PhD is the study of the fabrication and characterization of radial junction solar cells based on crystalline silicon nanowires. A study of the nanowire growth with two metallic catalysts (copper and aluminum) in a reduced pressure chemical vapor deposition system is presented. The influence of the growth conditions on the morphology, doping density and catalyst contamination inside the nanowires is analyzed by electrical, chemical (SIMS) and structural (SEM, TEM, Raman) characterizations. Copper catalyst is used to fabricate a solar cell with p-type nanowire with a radial junction created by n-type amorphous silicon (a-Si:H) deposition. Photovoltaic performances are measured and interpreted. A conversion efficiency of 5% is measured on a solar cell with 1.5µm high silicon nanowires.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / SOUSA, Vinícius da Silva Ramos de. O efeito magnetocalórico anisotrópico nos compostos RAl2 (R = Dy, Er, Ho, Nd e Tb). 2008. 99f. Dissertação (Mestrado em Física) - Instituto de Física Armando Dias Tavares, Universidade do Estado do Rio de Janeiro, Rio de Janeiro, 2008. O efeito magnetocalórico é a base da refrigeração magnética. O potencial magnetocalórico é caracterizado por duas quantidades termodinâmicas: a variação isotérmica da entropia (ΔSiso) e a variação adiabática da temperatura (ΔTad), as quais são calculadas sob uma variação na intensidade do campo magnético aplicado ao sistema. Em sistemas magnéticos que apresentam uma anisotropia magnética é observada uma mudança no efeito magnetocalórico, isto porque este potencial torna-se fortemente dependente da direção de aplicação do campo magnético. A anisotropia em sistemas magnéticos pode levar a um efeito magnetocalórico inverso, assim como à definição de um efeito magnetocalórico anisotrópico, o qual por definição é calculado para um campo cuja intensidade é mantida constante e cuja orientação variamos de uma direção difícil de magnetização para a direção fácil de magnetização. O efeito magnetocalórico anisotrópico foi estudado para os compostos intermetálicos de terras raras do tipo RAl2 considerando-se um modelo microscópico que leva em conta as interações de troca (na aproximação de campo médio), de Zeeman e a interação de campo elétrico cristalino, que é a responsável pela anisotropia nos compostos RAl2. O efeito magnetocalórico anisotrópico foi investigado para a série RAl2 e comparado com o efeito magnetocalórico usual. / The magnetic refrigeration is based on the magnetocaloric effect. The magnetocaloric potential is characterized by the two thermodynamics quantities: the isothermal entropy change (ΔSiso) and the adiabatic temperature change (ΔTad), which are calculated upon a change in the intensity of the applied magnetic field. In anisotropic magnetic systems it is observed a change in the magnetocaloric effect, since this potential becomes strongly dependent on the direction in which the external magnetic field is applied. The anisotropy in such magnetic systems can lead to an inverse magnetocaloric effect, as well as to the definition of an anisotropic magnetocaloric effect, that by definition is calculated upon a magnetic field which intensity is kept fixed and which orientation is changed from a hard direction of magnetization to the easy direction of magnetization. This anisotropic magnetocaloric effect was performed for the RAl2 intermetallic compounds considering a microscopic model Hamiltonian that includes the Zeeman interaction, the exchange interaction (taken in the mean field approximation) and the crystalline electrical field, that is responsible for the anisotropy in the RAl2 compounds. The anisotropic magnetocaloric was fully investigated for the serie RAl2 and compared with the usual magnetocaloric effect and several curves of (ΔSiso) and (ΔTad) were obtained.

The thesis entitled “Organic fluorine in crystal engineering: Consequences on molecular and supramolecular organization” consists of six chapters. The main theme of the thesis is to address the role of substituted fluorine atoms in altering the geometrical and electronic features in organic molecules and its subsequent consequences on crystal packing. The thesis is divided into three parts. Part I deals with compounds that are liquids under ambient conditions, crystal structures of which have been determined by the technique of in situ cryocrystallography. Part II demonstrates the utilization of in situ cryocrystallography to study kinetically trapped metastable crystalline phases that provide information about crystallization pathways. In part III, crystal structures of a series of conformationally flexible molecules are studied to evaluate the consequences of fluorine substitution on the overall molecular conformation. The genesis and stabilization of a particular molecular conformation has been rationalized in terms of variability in intermolecular interactions in the crystalline state. Part I. In situ cryocrystallography: Probing the solid state structures of ambient condition liquids. Chapter 1 discusses the crystal structures of benzoyl chloride and its fluorinated analogs. These compounds have been analysed for the propensity of adoption of Cl···O halogen bonded dimers and catemers. The influence of conformational and electronic effects of sequential fluorination on the periphery of the phenyl ring has been quantified in terms of the most positive electrostatic potential, VS,max (corresponding to σ-hole) on the Cl-atom. It is shown that fluorine also exhibits “amphoteric” nature like other heavier halogens, particularly in presence of electron withdrawing groups. Although almost all the derivatives pack through C–H···O, C–H···F, C–H···Cl, Cl···F, C–H···π and π···π interactions, the compound 2,3,5,6-tetrafluorobenzoyl chloride exhibited a not so commonly observed Cl···O halogen bonded catemer. On the other hand, the proposed Cl···O mediated dimer is not observed in any of the structures due to geometrical constraints in the crystal lattice. Chapter 2 presents the preferences of fluorine to form hydrogen bond (C–H···F) and halogen bonds (X···F; X= Cl, Br, I). Crystal structures of all three isomers of chloro-, bromo-and iodo-fluorobenzene have been probed in order to gain insights into packing interactions preferred by fluorine and other heavier halogens. It has been observed that homo halogen…halogen (Cl···Cl, Br···Br and I···I) contacts prevail in most of the structures with fluorine being associated with the hydrogen atom forming C–H···F hydrogen bond. The competition between homo and hetero halogen bonds (I···I vs I···F) is evident from the packing polymorphism exhibited by 4-iodo fluorobenzene observed under different cooling protocols. The crystal structures of pentafluoro halo (Cl, Br, I) benzenes were also determined in order to explore the propensity of formation of homo halogen bonds over hetero halogen bonds. Different dimeric and catemeric motifs based on X···F and F···F interactions were observed in these structures. Chapter 3 focuses on the effect of different cooling protocols in generating newer polymorphs of a given liquid. The third polymorph (C2/c, Z'=6) of phenylacetylene was obtained by sudden quenching of the liquid filled in capillary from a hot water bath (363 K) to the nitrogen bath (< 77 K). Also, different polymorphs were obtained for both 2¬fluoro phenylacetylene (Pna21, Z'=1) and 3-fluoro phenylacetylene (P21/c, Z'=3) when crystallized by sudden quenching in contrast to the generally followed method of slow cooling which results in isostructural forms (P21, Z'=1). The rationale for these kinetically stable “arrested” crystalline configurations is provided in part II of the thesis. Part II. Tracing crystallization pathways via kinetically captured metastable forms. Chapter 4 explains the utilization of the new approach of sudden quenching of liquids (detailed in chapter 3) to obtain kinetically stable (metastable) crystalline phases that appear to be closer to the unstructured liquids. Six different examples namely, phenylacetylene, 2-fluorophenylacetylene, 3-fluorophenylacetylene, 4-fluorobenzoyl chloride, 3-chloro fluorobenzene and ethyl chloroformate are discussed in this context. In each case, different polymorphs were obtained when the liquid was cooled slowly (100 K/h) and when quenched sharply in liquid nitrogen. The relationship between these metastable forms and the stable forms (obtained by slow cooling) combined with the mechanistic details of growth of stable forms from metastable forms provides clues about the crystallization pathways. Part III. Conformational analysis in the solid state: Counterbalance of intermolecular interactions with molecular and crystallographic symmetries. Chapter 5 describes the crystal structures of a series of conformationally flexible molecules namely, acetylene and diacetylene spaced aryl biscarbonates and biscarbamates. While most of the molecules adopt commonly anticipated anti (transoid) conformation, some adopt unusual cisoid and gauche conformations. It is shown that the unusually twisted conformation of one of the compounds [but-2-yne-bis(2,3,4,5,6¬pentafluorocarbonate)] is stabilized mainly by the extraordinarily short C–H···F intermolecular hydrogen bond. The strength of this rather short C–H···F hydrogen bond has been authenticated by combined single crystal neutron diffraction and X-ray charge density analysis. It has also been shown that the equi-volume relationship of H-and F-atoms (H/F isosterism) can be explored to access various possible conformers of a diacetylene spaced aryl biscarbonate. While biscarbonates show variety of molecular conformations due to absence of robust intermolecular interactions, all the biscarbamates adopt anti conformation where the molecules are linked with antiparallel chains formed with N–H···O=C hydrogen bonds. Chapter 6 presents a unique example where the commonly encountered crystallographic terms namely, high Z' structure, polymorphism, phase transformation, disorder, isosterism and isostructuralism are witnessed in a single molecular species (parent compound benzoylcarvacryl thiourea and its fluorine substituted analogs). The origin of all these phenomenon has been attributed to the propensity of formation of a planar molecular dimeric chain mediated via N–H···O [R2 (12)] and N–H···S [R2 (8)] dimers.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES / Fundação de Apoio a Pesquisa e à Inovação Tecnológica do Estado de Sergipe - FAPITEC/SE / In this dissertation we have modeled the magnetic and thermal properties of rareearth intermetallic compounds by using a molecular field model. For this purpose we begin with a Hamiltonian that considers the crystalline electric field interaction and the exchange interaction between the rare earth ions treated in the approach molecular field. We developed a computer program to determine the eigenvalues and eigenvectors with which determine the magnetization, internal energy and hence the specific heat of the system. In principle we have considered systems with localized magnetism due to 4f electrons and an anisotropic exchange interaction. To test our program we have performed fittings of magnetization and specific heat data for the three families of intermetallic compounds RNi5 (R = Dy, Er, Ho, Pr, Tb), RRhIn5 (R = Ce, Er, Nd, Pr, Tm) and R3Co4Sn13 (R = La, Ce, Nd, Gd, Pr) and the HoZn and TmCd alloys. In RNi5 ferromagnetic family we got the best fittings, in RRhIn5 antiferromagnetic family the fittings provided molecular field constant very diferent much from the values found in the literature. In R3Co4Sn13 antiferromagnetic family we have gotten reasonable fits, while the TmCd and HoZn compounds the fits wore very good, because they are ferromagnetic. We concluded that even with the limitations, the molecular field model is efficient to study ferromagnetic rare earth intermetallic compounds. / Nesta dissertação modelamos as propriedades magnéticas e térmicas de compostos intermetálicos de terras raras magnéticos usando um modelo de campo molecular. Para este fim partimos de um hamiltoniano que considera a interação de campo elétrico cristalino e a interação de troca entre os íons de terra rara tratada na aproximação de campo molecular. Elaboramos um programa computacional para determinar os autovalores e autovetores com os quais encontramos a magnetização, energia interna e, por conseguinte o calor especifico do sistema. Em princípio consideramos sistemas com magnetismo localizado devido a elétrons 4f e uma interação de troca anisotrópica. Para testar nosso programa realizamos ajustes de dados de magnetização e de calor específico para as três famílias de compostos intermetálicos RNi5 (R= Dy, Er, Ho, Pr, Tb), RRhIn5 (R=Ce, Er, Nd, Pr, Tm) e R3Co4Sn13 (R = La, Ce, Nd, Gd, Pr) e mais os compostos HoZn e TmCd. Na família RNi5 que é ferromagnética conseguimos os melhores ajustes, na família RRhIn5 com ordem antiferromagnética conseguimos alguns bons ajustes mas as constantes de campo molecular diferiram muito dos valores encontrados na literatura. Na família R3Co4Sn13 antiferromagnética conseguimos ajustes razoáveis, enquanto que nos compostos TmCd e o HoZn conseguimos bons ajustes, isto por que eles são ferromagnéticos. Concluímos que mesmo com as limitações o modelo de campo molecular se mostra eficiente para compostos intermetálicos a base de terra rara ferromagnéticos.

Orientadores: Carlos Manuel Giles Antunez de Mayolo, Pascoal Jose Giglio Pagliuso / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-08T18:22:30Z (GMT). No. of bitstreams: 1 Serrano_RaimundoLora_D.pdf: 2642603 bytes, checksum: 743f3ac1f8dffb9e6358f1a7958794e6 (MD5) Previous issue date: 2006 / Resumo: Neste trabalho investigamos de forma sistemática as propriedades magnéticas macroscópicas (Susceptibilidade magnética, calor específico, resistividade elétrica) e as estruturas magnéticas de uma nova série de compostos tetragonais isoestruturais Rm Mn In3m+2n (R = Gd, Tb, Sm; M = Rh, Ir; m = 1, 2; n = 0, 1) e exploramos suas relações com as interessantes propriedades físicas encontradas em outros compostos desta família, especialmente quando R = Ce, onde tem sido observado um comportamento do tipo férmions pesados com supercondutividade não convencional (USC). Foram determinadas as estruturas magnéticas dos compostos Gd2IrIn8, GdRhIn5, GdIn3, TbRhIn5, Tb2RhIn8, Smn2IrIn8 em amostras monocristalinas de alta qualidade através da técnica de Difração Magnética de Raios-x (DMRX), e encontramos que todos se ordenam antiferromagneticamente com estruturas comensuráveis abaixo da temperatura de ordenamento (TN) com vetores de propagação (1/2,0,0), (0,1/2,1/2),(1/2,1/2,0), (1/2,0,1/2), (1/2,1/2,1/2) e (1/2,0,0), respectivamente. Os momentos magnéticos dos íons de terra rara se orientam no plano ab tetragonal no caso dos compostos com R = Gd e Sm2IrIn8 enquanto que no TbRhIn5 a orientação tem lugar ao longo do eixo c. Os compostos tetragonais inéditos a base de Tb foram todos sintetizados e caracterizados magnética e estruturalmente, pela primeira vez, dentro deste trabalho. Eles apresentam maior TN em relação ao composto cúbico TbIn3 (Tb1-0-3, TN ¿32 K), similar ao comportamento apresentado pelos compostos tetragonais de R = Nd. Com relação à direção dos momentos magnéticos no estado ordenado e à evolução de TN ao longo da série, os nossos resultados estão de acordo com um novo modelo teórico de campo médio, desenvolvido por colaboradores, que considera uma interação de primeiros vizinhos Ruderman-Kittel-Kasuya-Yosida (RKKY) isotrópica e efeitos de campo cristalino (CEF) tetragonal aplicado aos compostos com R = Ce, Nd e Tb. A idéia básica de interpretação dos nossos resultados, extraída dos resultados do modelo, é que as diferentes direções de ordenamento encontrados para diferentes R são determinadas por efeitos de CEF e que a variação dos parâmetros de CEF tetragonal determina a evolulção de TN . De acordo com isto, nos compostos com R = Gd, onde o momento angular orbital L = 0, os efeitos CEF não são importantes, TN é aproximadamente igual quando se comparam os compostos tetragonais com o cúbico GdIn3. Nos outros compostos tetragonais, cuja direção dos momentos tem lugar no plano ab (R = Ce e Sm), TN diminui, e aumenta quando a ordem ocorre ao longo do eixo c. O mecanismo de controle, por efeitos de campo cristalino, do comportamento da orientação dos momentos magnéticos e de TN pode, em particular, ser extrapolado aos compostos tetragonais de Ce já que a supressão de TN , combinada com efeitos de hibridização e efeito Kondo, muito importantes nestes casos, podem provocar fortes flutuações magnéticas no plano ab que, pela sua vez, podem ser relevantes no mecanismo de supercondutividade não convencional quase-2D / Abstract: In this work we present a systematic study of the physical properties (magnetic susceptibility, specific heat and electrical resistivity) and the determination of magnetic structures of a new series of isostructural tetragonal compounds RmMnIn3m+2n(R = Gd, Tb, Sm; M = Rh, Ir; m = 1,2; n = 0,1) exploring their relationships with the interesting physical properties found in other compounds of this family, specially when R = Ce compounds, for whose a heavy fermion behavior with unconventional superconductivity (USC) has been reported. The magnetic structures have been determined using high quality single crystalline samples of Gd2IrIn8, GdRhIn5, GdIn3, TbRhIn5, Tb2RhIn8 and Sm2IrIn8 through the resonant x-ray magnetic scattering (RXMS) technique. Our results show that all these systems order antiferromagnetically in commensurate structures below the ordering temperature (TN) with propagation vectors (1/2,0,0),(0,1/2,1/2),(1/2,1/2,0),(1/2,0,1/2),(1/2,1/2,1/2) and (1/2,0,0), respectively. The magnetic moments of rare earth ions are oriented in the tetragonal ab-plane for R = Gd and Sm2IrIn8 compounds, while for the TbRhIn5 they order along the c-axis direction. The tetragonal Tb-based compounds were synthesized and characterized for the first time during this work. In these cases TN is increased when compared to the TN of the cubic TbIn3 (Tb1-0-3, TN¿32 K), as has been found for tetragonal Nd-based compounds. Regarding the magnetic moment directions in the ordered phase and the TN evolution along the series our results agree with those obtained from a mean field theoretical model, developed by collaborators, which considers an isotropic first-neighbors Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction and tetragonal crystal field effects (CEF) applied to Ce-, Nd- and Tb-based compounds. We can conclude from our results that the CEF effects are responsible in determining the magnetic moment directions for different R ions and varying the tetragonal CEF parameters we can also determine the TN evolution along the series. According to this idea, for Gd-based compounds, where the orbital angular momentum L = 0 and CEF effects are not important, TN is approximately the same for the tetragonal compounds when compared with cubic GdIn3. For those cases with ordered moments along any in-plane direction (R = Ce and Sm) TN decreases while it is increased when the moments orientation take place along the c-axis. The CEF effects-driven mechanism to determine the behavior of magnetic moment directions and TN, well explained by the mean field model, could be extrapolated to Ce-based compounds where combined with hybridization and Kondo effects, whose are very important, may create strong in-plane magnetic uctuations that can mediate the quasi-2D unconventional superconductivity in these systems / Doutorado / Física da Matéria Condensada / Doutor em Ciências

Plastic flow in bulk metallic glasses (BMGs) localizes into narrow bands, which, in the absence of a microstructure that could obstruct them, propagate unhindered under tensile loading. In constrained deformation conditions such as indentation and at notch roots, extensive shear band formation can occur. A key issue in the context of fracture of BMGs that is yet to be understood comprehensively is how their toughness is controlled by various state parameters. Towards this end, the change in fracture toughness and plasticity with short term annealing above and below the glass transition temperature, Tg, is studied in a Zr-based BMG. Elastic properties like shear modulus, Poisson's ratio as well as parameters defining the internal state like the fictive temperature, Tf, density, and free volume are measured and correlation with the toughness was attempted at. While the elastic properties may help in distinguishing between tough and brittle glasses, they fail to reveal the reasons behind the toughness variations. Spherical-tip nanoindentation and microindentation tests were employed to probe the size, distributions and activation energies of the microscopic plastic carriers with the former and shear band densities with the latter. Results indicate that specimens annealed at a higher temperature, Ta, exhibit profuse shear banding with negligible changes in the local yield strengths. Statistical analysis of the nanoindentation data by incorporating the nucleation rate theory and the results of the cooperative shear model (CSM), reveals that short term annealing doesn't alter the shear transformation zone (STZ) size much. However, density estimates indicate changes in the free volume content across specimens. A model combining STZ activation and free volume accumulation predicts a higher rate in the reduction of the cumulative STZ activation barrier in specimens with a higher initial free volume content. Of the macroscopic physical properties, the specimen density is revealed to be a useful qualitative measure of enhancement in fracture toughness and plasticity in BMGs. We turn our attention next to the brittle fracture in BMGs, with the specific objective of understanding the mechanisms of failure. For this purpose, mode I fracture experiments were conducted on embrittled BMG samples and the fracture surface features were analyzed in detail. Wallner lines, which result from the interaction between the propagating crack front and shear waves emanating from a secondary source, were observed on the fracture surface and geometric analysis of them indicates that the maximum crack velocity to be ~800 m/s, which corresponds to ~0.32 times the shear wave speed. Fractography reveals that the sharp crack nucleation at the notch tip occurs at the mid-section of the specimens with the observation of flat and half-penny shaped cracks. On this basis, we conclude that the crack initiation in brittle BMGs occurs through hydrostatic stress assisted cavity nucleation ahead of the notch tip. High magnification scanning electron and atomic force microscopies of the dynamic crack growth regions reveal highly organized, nanoscale periodic patterns with a spacing of ~79 nm. Juxtaposition of the crack velocity with this spacing suggests that that the crack takes ~10-10 s for peak-to-peak propagation. This, and the estimated adiabatic temperature rise ahead of the propagating crack tip that suggests local softening, are utilized to critically discuss possible causes for the nanocorrugation formation. The Taylor’s fluid meniscus instability is unequivocally ruled out. Then, two other possible mechanisms, viz. (a) crack tip blunting and resharpening through nanovoid nucleation and growth ahead of the crack tip and eventual coalescence, and (b) dynamic oscillation of the crack in a thin slab of softened zone ahead of the crack-tip, are critically discussed. One way of alleviating the fracture-related issues in BMGs is to impart a microstructure to it, which would either impede the growth of shear bands or promote the multiplication of them. One such approach is through the BMG composites (BMGCs) route, wherein a crystalline second phase incorporated in the BMG matrix. There is a need to study the effects of reinforcement content, size and distribution on the mechanical behavior of the BMGC so as to achieve an optimum combination of strength and ductility. For this purpose, an investigation into the microstructure and tensile properties of Zr/Ti-based BMG composites of the same composition, but produced by different routes, was conducted so as to identify “structure–property” connections in these materials. This was accomplished by employing four different processing methods—arc melting, suction casting, semi-solid forging and induction melting on a water-cooled copper boat—on composites with two different dendrite volume fractions, Vd. The change in processing parameters only affects microstructural length scales such as the interdendritic spacing, λ, and dendrite size, δ, whereas compositions of the matrix and dendrite are unaffected. Broadly, the composite’s properties are insensitive to the microstructural length scales when Vd is high (∼75%), whereas they become process dependent for relatively lower Vd (∼55%). Larger δ in arc-melted and forged specimens result in higher ductility (7–9%) and lower hardening rates, whereas smaller dendrites increase the hardening rate. A bimodal distribution of dendrites offers excellent ductility at a marginal cost of yield strength. Finer λ result in marked improvements in both ductility and yield strength, due to the confinement of shear band nucleation sites in smaller volumes of the glassy phase. Forging in the semi-solid state imparts such a microstructure.

Les semiconducteurs III-V ayant des propriétés électroniques et optiques très intéressantes, leur intégration sur Si permettrait la combinaison de fonctionnalités variées sur la même puce, une solution potentielle aux obstacles affrontés par les composants CMOS. Les travaux pionniers de McKee et al ont démontré que le SrTiO3 (STO) peut être directement épitaxié sur Si par EJM (Epitaxie par Jets Moléculaires). Plus tard, une équipe de Motorola a montré qu’il était possible d’épitaxier des couches minces de GaAs sur des templates de STO/Si, ouvrant une voie nouvelle pour l’intégration monolithique de III-V sur Si. Sur cette base, l’INL a entrepris l’étude de la croissance de semiconducteurs III-V sur STO. Il a notamment été montré que la faible adhésion caractéristique de ces systèmes favorisait un mode d’accommodation spécifique du désaccord paramétrique par la formation d’un réseau de dislocations confinées à l’interface entre les deux matériaux sans défauts traversant liés à une relaxation plastique, ce qui ouvre des perspectives intéressantes pour l’intégration monolithique de III-V sur Si. Dans ce contexte, lors de cette thèse, Nous nous sommes d’abord focalisé sur l’optimisation de la croissance des templates de STO/Si. Nous avons en particulier montré qu’une couche de STO relaxée et riche en oxygène favorisait la reprise de croissance de l’InP. Nous avons ensuite étudié de manière systématique la croissance d’InP sur STO. La faible adhésion caractéristique de ce système conduit à la formation d’îlots aux premiers stades de la croissance, ainsi qu’à l’observation d’une compétition entre plusieurs orientations cristallines de l’InP. Nous avons fixé des conditions de croissance et de préparation de la surface de STO permettant d’obtenir des îlots purement orientés (001). Nous avons ensuite optimisés l’étape de coalescence de ces îlots pour former des couches 2D d’InP intégrées sur STO/Si. Une étude structurale et optique complète de ces hétérostructures, nous a permis d’analyser le potentiel de notre approche et pointer certaines limitations des templates de STO/Si. Sur cette base, nous avons enfin initié l’étude de templates alternatifs pour la croissance d’InP, en effectuant quelques études préliminaires de l’épitaxie d’InP sur substrats de LaAlO3. / Due to their electrical and optical properties, the integration of III-V semiconductors on Si would open the path to the combination of a various functionalities on the same chip, a potential solution to the challenges faced by CMOS components. The pionner studies by McKee and al have shown that SrTiO3 (STO) could be directly epitaxied on Si by MBE (Molecular Beam Epitaxy). Few years later, a Motorola team has shown that it is possible to epitaxy thin GaAs layers on STO/Si templates, hence opening a new path for III-V monolithic integration on Si. Based on this, the INL has undertaken the study of III-V semiconductors growth on STO. In particular, it has been shown that the weak adhesion specific to these systems favors a preferential accommodation mode of the lattice mismatch by breaking interfacial bonds rather than by plastic relaxation of an initially compressed layer. Hence, it is possible in spite of a strong lattice mismatch to grow III-V semiconductors without threading defects related to a plastic relaxation mechanism, which opens interesting perspectives for IIIV monolithic integration on Si. In this context, during this thesis, we have focalised in the beginning on optimising the growth of the STO/Si templates. In particular, we have shown that a relaxed and oxygen-rich STO layer favors undertaking InP growth. Next, we have studied systematically the InP growth on STO. The weak adhesion specific to this system leads to islands formation at the early stages of growth, as well as the observation of a competition between different crystalline orientations of the InP islands. We have worked out STO growth conditions and surface preparation strategies that allow obtaining purely (001) oriented InP islands. We have next optimised the islands coalescence step in order to form 2D InP layers on STO/Si. Based on a complete structural and optical study of these heterostructures, we have been able to analyse our approach’s potential and to point out cetain limitations of the STO/Si templates. On this basis, we have finally initiated the study of alternative templates for InP growth, by undergoing some preliminary studies of InP epitaxy on LaAlO3 substrates.

Le développement de l’industrie microélectronique a été jusqu’à récemment essentiellement basé sur une augmentation régulière des performances des composants liée à une réduction toujours plus poussée de leurs dimensions dans la continuité de la loi de Moore. Cette évolution se heurte cependant aux limitations intrinsèques des propriétés physiques du couple silicium-silice sur lesquelles elle repose. La diversification des matériaux intégrés sur Si devient ainsi un enjeu majeur du développement de cette industrie. Dans ce contexte, les oxydes dits fonctionnels forment une famille de matériaux particulièrement intéressante : leurs propriétés physiques (ferroélectricité, ferromagnétisme, diélectricité, piézoélectricité, effet Pockels fort) ainsi que la possibilité de les combiner sous forme d’hétérostructures par épitaxie ouvrent la voie à la fabrication de composants innovants et ultraperformants pour des applications dans les domaines de la micro et de l’optoélectronique, de la spintronique, des micro-ondes et des MEMS. Ces oxydes, et plus spécifiquement ceux appartenant à la famille des pérovskites, sont classiquement épitaxiés par ablation laser (PLD), pulvérisation cathodique ou dépôt de vapeur chimique (CVD) sur des substrats de SrTiO3 (STO). Cependant, ces substrats sont inadaptés aux applications industrielles du fait de leur taille limitée au cm2 et de leur qualité structurale médiocre. Par ailleurs, définir une stratégie pour intégrer ces matériaux sur Si est indispensable pour le développement d’une filière susceptible d’avoir des débouchés applicatifs. Dans ce contexte, l’utilisation de l’épitaxie par jets moléculaires (l’EJM) pour la croissance de ces oxydes est particulièrement pertinente, puisque cette technique permet de fabriquer des couches minces monocristallines de STO sur Si et sur GaAs, ce qui ouvre la voie à l’intégration d’oxydes fonctionnels sur ces substrats via des templates de STO. Cependant, l’EJM est une technique peu mature pour la croissance des oxydes fonctionnels, et doit donc être développée pour cet objectif. C’est le but de ce travail de thèse, financé par un contrat CIFRE avec la société RIBER, équipementier pour l’épitaxie par jets moléculaires, et entrant dans le cadre d’un laboratoire commun entre RIBER et l’INL pour le développement de l’EJM d’oxydes fonctionnels. Nous présentons tout d’abord les développements techniques que nous avons menés autour d’un réacteur EJM « oxydes » prototype. Nous montrons notamment comment nous avons pu améliorer la fiabilité des sources d’oxygène, Sr, Ba et Ti nécessaires à l’épitaxie de matériaux clés que sont le STO et le BaTiO3 ferroélectrique. Nous montrons ensuite comment ces développements techniques nous ont permis de mieux comprendre et mieux maîtriser la croissance de templates de STO sur Si, et en particulier que la cristallisation du STO, initialement amorphe sur Si, est catalysée par un excès de Sr aux premiers stades de la croissance. Nous montrons comment il est possible de contrôler cet excès de Sr pour qu’il ne détériore pas la qualité des couches minces, et nous proposons d’une manière plus générale une étude de l’influence de la stoechiométrie de l’alliage sur ses propriétés structurales. Nous montrons également comment l’utilisation de notre source d’oxygène à plasma permet d’obtenir une oxydation satisfaisante des couches minces d’oxyde. Nous donnons enfin quelques exemples d’intégration sur Si d’oxydes fonctionnels (PZT piézoélectrique, BaTiO3 ferroélectrique) réalisés sur des templates de STO/Si. Nous avons enfin initié l’étude de la croissance par EJM de STO sur des substrats de GaAs et enfin, réaliser la première démonstration d’intégration de PZT ferroélectrique monocristallin sur GaAs. / The development of microelectronics industry has been, until recently, essentially based on the regular improvement of device performances thanks to the downscaling strategy as a continuity of Moore’s law. This evolution is now confronted to the intrinsic physical properties limitations of the material used in the silicon industry (Si and SiO2). Integrating different materials on silicon thus becomes a major challenge of industry development. In this context, functional oxides form a very interesting family of materials: their physical properties (ferroelectricity, ferromagnetism, piezoelectricity, strong Pockels effect) and the possibility to combine them (heterostructures) by epitaxy opens a way for fabricating innovating and high-performance components for applications in micro and optoelectronic, spintronic, micro-waves and MEMs… These oxides and specifically those belonging to the perovskite family are classicaly grown by Laser Ablation (PLD), sputtering or by chemical vapour deposition (CVD) on STO substrates. These substrates are inappropriate for industry applications due to their limited size (1cm²) and their relatively bad structural quality. On the other hand, defining a strategy for integrating these materials on silicon is essential for future applications. In this context, using molecular beam epitaxy (MBE) for the growth of oxides is particularly relevant since this technique allows fabricating monocristalline thin films of STO on Silicon and on GaAs, which open the way of integrating other functional oxides on this substrates via templates of STO. However, MBE is not a mature technique for functional oxides growth. The purpose of this PhD work, financed by a CIFRE contract with the RIBER Company, equipment manifacturer for molecular beam epitaxy, is to develop the growth of functional oxides by MBE. It enters into the framework of a joint laboratory signed between RIBER and INL In this work, we first present technical development performed on a prototype MBE reactor dedicated to oxide growth. We show by then how these technical developments allow a better understanding and control of the growth of STO on Si templates, in particular the crystallisation of initially amorphous STO on Silicon, which is catalysed by an excess of Sr at the first stage of the growth. We demonstrate how it is possible to control this Sr excess so that it does not affect the film quality. We propose a study of the effect of STO cationic stoechiometry on the structural properties. We also show how the use of a conveniently designed oxygen plasma source allows for obtaining good oxidation of the oxide thin films. Finally, we detail a few examples of integration of functional oxides (piezoelectric PZT, ferroelectric BTO) on templates STO/Si. We have also studied the growth of STO on GaAs substrates by MBE and we demonstrate the first integration of monocristalline ferroelectric PZT on GaAs.

The past few decades have witnessed an almost exponential increase in interest in the field of metal organic frameworks (MOFs), which can be evidenced from the large number of scientific articles being published routinely in this area. The MOFs are crystalline hybrid materials built via the judicial use of inorganic metal ions and organic linkers, thereby bridging the gap between purely inorganic and organic materials. The structural versatility and the potential tunability of the MOFs imparts unique physicochemical and thermomechanical properties, which have rendered them immensely useful in the branches of chemistry, material science, physics, biology, nanotechnology, medicine as well as environmental engineering. The MOFs have been shown to be promising as materials for gas storage and separation, sensors, ferroelectric and non-linear optical materials, magnetism, catalysis, drug delivery etc and researchers have been devising strategies to utilize the MOFs to tackle a number of global challenges of the twenty-first century. A survey of the literature reveals that the linear organic linkers, 1,4- benzenedicarboxylic acid (BDC) and 4,4’-biphenyldicarboxylic acid (BPDC), have been the organic linkers of choice for the construction of stable, porous and multifunctional MOFs. The aim of this thesis has been to monitor the effect that the presence of a functional group in between the benzene rings of the BPDC would have on the overall structures and the properties of the MOFs. Thus, as part of the investigations, the preparation of the MOF compounds using 4,4’-sulfonyldibenzoic acid (SDBA) and 4,4’- azodibenzoic acid (ABA) have been accomplished. Along with the conventional hydrothermal and solvothermal synthetic techniques, the liquid-liquid biphasic reaction method was also utilized for the synthesis of some of the compounds. The structures of the compounds were ascertained from single crystal X-ray diffraction technique. Proton conductivity studies were performed on Mn based porous MOFs using AC impedance spectroscopy. The ferroelectric behavior in a Co based porous MOF was established using dielectric and polarization vs electric field measurements. The labile nature of the lattice solvent molecules was established utilizing single crystal X-ray diffraction studies and water sorption experiments. In addition, the site selective substitution in a homometallic MOF and the subsequent conversion to a mixed-metal spinel oxide upon thermal decomposition, have also been studied. Chapter 1 of the thesis is a brief overview of the metal organic framework compounds and summarizes the various important structures that have been reported in literature and the interesting properties that they exhibit. In chapter 2, the proton conductivity behavior, solvent mediated single crystal to single crystal (SCSC) and related structural transformations in a family of Mn and Co based porous MOFs with SDBA have been presented. Also presented are the results of the site selective substitution of Mn by Co in a homometallic Mn based MOF and it’s subsequent decomposition to CoMn2O4 spinel oxide nanoparticles. In chapter 3, the syntheses, structures and the magnetic properties of the pentanuclear Mn5 based MOF compounds with SDBA have been presented. The role of the time and the temperature in the formation of the compounds has also been presented. In chapter 4, the dehydration/rehydration mediated switchable room temperature ferroelectric behavior, the single crystal to single crystal solvent exchange studies and selective gas sorption behavior in an anionic Co based MOF with SDBA has been discussed. In chapter 5, the use of the liquid-liquid biphasic synthetic route in the formation of Zn and Cd based MOFs with ABA has been discussed. Structural transformations between the one dimensional Zn based compounds and the heterogeneous catalytic studies using the Cd based compounds have also been presented.