Electrical and optical characterizations of heterostructures and thin films based on group III-V compound semiconductors are presented. Optical properties of GaMnN thin films grown by Metalorganic Chemical Vapor Deposition (MOCVD) on GaN/Sapphire templates were investigated using IR reflection spectroscopy. Experimental reflection spectra were fitted using a non - linear fitting algorithm, and the high frequency dielectric constant (ε∞), optical phonon frequencies of E1(TO) and E1(LO), and their oscillator strengths (S) and broadening constants (Γ) were obtained for GaMnN thin films with different Mn fraction. The high frequency dielectric constant (ε∞) of InN thin films grown by the high pressure chemical vapor deposition (HPCVD) method was also investigated by IR reflection spectroscopy and the average was found to vary between 7.0 - 8.6. The mobility of free carriers in InN thin films was calculated using the damping constant of the plasma oscillator. The terahertz detection capability of n-type GaAs/AlGaAs Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) structures was demonstrated. A threshold frequency of 3.2 THz (93 µm) with a peak responsivity of 6.5 A/W at 7.1 THz was obtained using a 0.7 µm thick 1E18 cm−3 n - type doped GaAs emitter layer and a 1 µm thick undoped Al(0.04)Ga(0.96)As barrier layer. Using n - type doped GaAs emitter layers, the possibility of obtaining small workfunctions (∆) required for terahertz detectors has been successfully demonstrated. In addition, the possibility of using GaN (GaMnN) and InN materials for terahertz detection was investigated and a possible GaN base terahertz detector design is presented. The non - linear behavior of the Inter Pulse Time Intervals (IPTI) of neuron - like electric pulses triggered externally in a GaAs/InGaAs Multi Quantum Well (MQW) structure at low temperature (~10 K) was investigated. It was found that a grouping behavior of IPTIs exists at slow triggering pulse rates. Furthermore, the calculated correlation dimension reveals that the dimensionality of the system is higher than the average dimension found in most of the natural systems. Finally, an investigation of terahertz radiation efect on biological system is reported.

To accelerate environmentally friendly thin film photovoltaic (PV) technologies, copper-based chalcogenides are attractive as absorber materials. Chalcopyrite copper indium gallium selenide (CIGS ≡ CuIn1–xGaxSe2) is today a commercially important PV material, and it is also in many aspects a very interesting material from a scientific point of view. Copper zinc tin sulfide selenide (CZTSSe ≡ Cu2ZnSn(S1–xSex)4) is considered as an emerging alternative thin film absorber material. Ternary Cu2SnS3 (CTS) is a potential absorber material, thus its related alloys Cu2Sn1–xGexS3 (CTGS) and Cu2Sn1–xSixS3 (CTSS) are attractive due to the tunable band gap energies. CuSb(Se1–xTex)2 and CuBi(S1–xSex)2 can be potential as ultra-thin (≤ 100 nm) film absorber materials in the future. In the thesis, analyses of these Cu-based chalcogenides are based on first-principles calculations performed by means of the projector augmented wave method and the full-potential linearized augmented plane wave formalisms within the density functional theory as implemented in the VASP and WIEN2k program packages, respectively. The electronic and optical properties of CIGS (x = 0, 0.5, and 1) are studied, where the lowest conduction band (CB) and the three uppermost valence bands (VBs) are parameterized and analyzed in detail. The parameterization demonstrates that the corresponding energy dispersions of the topmost VBs are strongly anisotropic and non-parabolic even very close to the Γ-point. Moreover, the density-of-states and constant energy surfaces are calculated utilizing the parameterization, and the Fermi energy level and the carrier concentration are modeled for p-type CIGS. We conclude that the parameterization is more accurate than the commonly used parabolic approximation. The calculated dielectric function of CuIn0.5Ga0.5Se2 is also compared with measured dielectric function of CuIn0.7Ga0.3Se2 collaborating with experimentalists. We found that the overall shapes of the calculated and measured dielectric function spectra are in good agreement. The transitions in the Brillouin zone edge from the topmost and the second topmost VBs to the lowest CB are responsible for the main absorption peaks. However, also the energetically lower VBs contribute significantly to the high absorption coefficient. CTS and its related alloys are explored and investigated. For a perfectly crystalline CTS, reported experimental double absorption onset in dielectric function is for the first time confirmed by our calculations. We also found that the band gap energies of CTGS and CTSS vary almost linearly with composition over the entire range of x. Moreover, those alloys have comparable absorption coefficients with CZTSSe. Cu2XSnS4 (X = Be, Mg, Ca, Mn, Fe, Ni, and Zn) are also studied, revealing rather similar crystalline, electronic, and optical properties. Despite difficulties to avoid high concentration of anti-site pairs disordering in all compounds, the concentration is reduced in Cu2BeSnS4 partly due to larger relaxation effects. CuSb(Se1–xTex)2 and CuBi(S1–xSex)2 are suggested as alternative ultra-thin film absorber materials. Their maximum efficiencies considering the Auger effect are ~25% even when the thicknesses of the materials are between 50 and 300 nm. / <p>QC 20170523</p>

An optical surface roughness model is presented, which allows a reliable determination of the dielectric function of thin films with high surface roughnesses of more than 10 nm peak to valley distance by means of spectroscopic ellipsometry. Starting from histogram evaluation of atomic force microscopy (AFM) topography measurements a specific roughness layer (RL) model was developed for an organic thin film grown in vacuum which is well suited as an example. Theoretical description based on counting statistics allows generalizing the RL model developed to be used for all non-conducting materials. Finally, a direct input of root mean square (RMS) values found by AFM measurements into the proposed model is presented, which is important for complex ellipsometric evaluation models where a reduction of the amount of unknown parameters can be crucial. Exemplarily, the evaluation of a N,N’-dimethoxyethyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiMethoxyethyl-PTCDI) film is presented, which exhibits a very high surface roughness, i.e. showing no homogeneous film at all.

Cette étude, expérimentale et théorique, de physique des surfaces développe une méthode basée sur la spectroscopie de perte d'énergie des photoélectrons, pour déterminer les propriétés électroniques d'un matériau à partir de mesures XPS. Sur la base de la physique de la photoémission dans un solide homogène, la technique XPS-PEELS donne accès à la fonction de perte d'énergie ELF(E, q) liée à la partie imaginaire et la fonction diélectrique sur une large plage d’énergie (environ 50 eV) avec une sensibilité typique de ≈ 5 nm en profondeur. Dans les métaux ou les semi-conducteurs à faible gap, qui présentent un chevauchement important entre le pic quasi-élastique ZLP(E) et la région des pertes d'énergie, la technique est rendue applicable par la méthode de transformée de Fourier développée dans cette thèse. Les distributions en énergie de la source de rayons X et de la fonction d’appareil sont directement mesurées. La forme asymétrique du pic quasi-élastique ZLP(E) est obtenue à partir de la densité d’états électroniques (calcul par une méthode DFT), à l’aide du modèle de Hopfield-Wertheim-Citrin décrivant la réponse des électrons de valence à la création du trou (théorie multi-corps). L'algorithme XPS-PEELS utilise l'ensemble du spectre sans soustraction empirique d’une ligne de base. Il considère deux types d'excitations de plasmon - intrinsèques et extrinsèques - avec des taux de création différents mais impose la même distribution en énergie. Cette méthode originale permet d’accéder à des excitations électroniques de faible énergie (pertes proches du pic XPS) ; dans le cas de l'aluminium métallique, la transition inter-bandes est observée à 1.80 eV. En tant que technique de spectroscopie électronique, les effets de dispersion de la fonction de perte ELF(E, q) ont été considérés en utilisant un code TD-DFT (Exciting); quel que soit le niveau d'approximation (RPA, ALDA, LRC), les calculs ne décrivent pas correctement la largeur du spectre ELF expérimental (2.3 eV). À la fin du travail, nous comparons la méthode de la transformée de Fourier avec une méthode empirique d'élimination du pic élastique, valable pour les isolants, dans le cas de l'oxyde d'aluminium Al₂O₃. / This surface physics study, experimental and theoretical, develops a technique based on the energy loss spectroscopy of photoelectrons, to determine electronic properties of a material from XPS measurements. Based on the physics of photoemission in a homogeneous solid, the XPS-PEELS technique provides the energy loss function ELF(E, q) related to the imaginary part and the dielectric function with energy extension up to 50 eV and a typical sensitivity of ≈ 5 nm in depth. In metals or low-gap semiconductors, with important overlap between the elastic peak and the energy loss region, the technique became applicable by the Fourier transform method developed in this thesis. In addition to the distribution of the X-ray source and analyzer apparatus function, the asymmetric shape of the no-loss peak ZLP(E) is based on the calculation of the Density of Electronic States (DFT method) and the Hopfield-Wertheim-Citrin model describing the response of valence electrons to the creation of the hole (many body theory). The XPS-PEELS algorithm uses the entire spectrum without any empirical background subtraction. It considers two types of plasmon excitations - intrinsic and extrinsic - with different rates of creation but imposing the same distribution in energy. This original method was applied to the aluminum metal, allowing the analysis of the loss function and revealing interband excitations (1.80 eV) at low energy, very close to the no-loss peak. As an electron spectroscopy technique, dispersion effects of the loss function ELF(E, q) were considered using a TD-DFT code (Exciting); for any level of approximation (RPA, ALDA, LRC), the calculations do not describe properly the high width (2.3 eV) of the experimental ELF. At the end of the work, we compare the Fourier transform method with an empirical method of elastic peak elimination, valid for insulators, in the case of aluminum oxide Al₂O₃.

Confinement effect on semiconductor nanowires properties. Alexis Nduwimana 100 pages Directed by Dr. Mei-Yin Chou We study the effect of confinement on various properties of semiconductor nanowires. First, we study the size and direction dependence of the band gap of germanium nanowires. We use the density functional theory in the local density approximation. Results shows that the band gap decreases with the diameter The susceptibility of these nanowires is also computed. Second, we look at the confinement effect on the piezoelectric coefficients of ZnO and AlN nanowires. The Berry phase method is used. It is found that depending on passivation, thepiezoelectric effect can decrease or increase. Finally, we study the size and direction dependence of the melting temperature of silicon nanowires. We use the molecular dynamics with the Stillinger Weber potential. Results indicate that the melting temperature increases with the nanowire diameter and that it is direction dependent.

Avec l’augmentation de la température, certains composés oxydes, transparents dans le proche infrarouge, deviennent progressivement opaques à l’approche de la fusion. Un tel comportement est inhabituel et impacte profondément leurs propriétés radiatives. Afin de comprendre ce phénomène, des mesures par spectroscopie d’émission infrarouge ont été effectuées depuis la température ambiante jusqu’à la fusion sur plusieurs oxydes cristallins (Mg2SiO4, LiAlO2, LiGaO2, ZnO, YAlO3, LaAlO3, LiNbO3, MgO). Ces données ont été complétées ponctuellement par des mesures de conductivité électriques, de RMN et de diffraction des rayons X en température. L’analyse des données expérimentales du facteur d’émission menée à l’aide d’un modèle de fonction diélectrique semi-quantique et incluant un terme de Drude étendu, a permis de caractériser finement la réponse de ces matériaux et de proposer une origine physique pour le mécanisme responsable de l’opacification. Le phénomène est thermiquement activé et peut être expliqué par la formation et la mobilité de polarons. Ce travail a également montré l’existence d’un lien étroit entre la microstructure des composés et les caractéristiques de l’opacification. / With increasing temperature, some oxide compounds that are transparent in the near infrared range become progressively opaque when approaching the liquid phase. Such a behavior is unusual and deeply impacts their thermal radiative properties. To understand this phenomenon, infrared emittance spectra were acquired from room temperature up to the liquid state on several crystalline oxides (Mg2SiO4, LiAlO2, LiGaO2, ZnO, YAlO3, LaAlO3, LiNbO3, MgO). These data have been selectively completed by electrical conductivity measurements, NMR and X-ray diffraction experiments versus temperature. The analysis of the experimental emittance data with a semi-quantum dielectric function model including an extended Drude term, allowed to characterize finely the material responses and to suggest a physical origin for the opacification mechanism. The phenomenon is thermally activated and can be explained by the formation and the mobility of polarons. This work also showed the existence of a close link between the material microstructure and the characteristics of the opacification.

No description available.

La matière dense et tiède (WDM) est un régime caractérisé par une densité proche du solide pour une température avoisinant celle de Fermi. Pour étudier cet état de la matière, dans cette thèse, une expérience d'interférométrie dans le domaine des fréquences est mise en place afin de mesurer la phase et la réflectivité - dans les deux directions de polarisation S et P - d'une onde sonde en réflexion sur un échantillon chauffé de manière très brève par une impulsion laser ultra-courte (sub-100fs). Il est alors porté dans un état hors-équilibre. Une méthode basée sur les mesures de réflectivité est mise en place pour contrôler la forme de l'interface entre le vide et la matière chauffée. Pour des fluences laser de l'ordre de 1 J/cm2, l'hydrodynamique d'un échantillon chauffé est étudiée par la mesure du déplacement de la surface et comparée au code hydrodynamique à deux températures ESTHER. Ensuite, la fonction diélectrique à 800 nm et 400 nm est déduite des mesures expérimentales et certaines quantités en sont extraites comme la densité électronique, la température électronique et les fréquences de collision en régime WDM. Elles sont par la suite comparées avec des modèles couramment utilisés. / The Warm Dense Matter (WDM) regime is characterised by a density close to the solid density and an electron temperature close to the Fermi temperature. In this work, the nonequilibrium Warm Dense Matter is studied during the solid to liquid phase transition induced by an ultra short laser interacting with a solid. A 30 femtoseconds time resolution pump-probe experiment (FDI) is set up, yielding to the measurement of the heated sample complex reflectivity for both S and P polarisation.We have determined a criterion based on the measured reflectivities, which permits to control the interface shape of the probed matter. For pump laser fluences around 1 J/cm2, the hydrodynamics of the heated matter is studied and experimental results are compared to the two-temperatures code ESTHER. Furthermore, the evolution of the dielectric function at 800 nm and 400 nm is inferred from our measurements on a sub-picosecond time-scale. Within the Drude-Lorentz model for the conduction electrons, the dielectric function yields information such as ionisation state, electronic temperature and electron collision frequency.

Die fortwährende Verkleinerung der Strukturbreiten in der Mikroelektronik erfordert es, herkömmliche SiO2 Dielektrika durch Materialien mit kleinerer Dielektrizitätskonstante zu ersetzen. Dafür sind verschiedene „low-k Materialien“ entwickelt worden. Unter diesen sind die Organosilikatgläser, die aus SiO2 Netzwerken mit eingelagerten Methylgruppen bestehen wegen ihrer ausgezeichneten Eigenschaften besonders interessant als Dielektrika zwischen metallischen Leiterbahnen. In dieser Arbeit sind fünf verschiedene dieser „low-k Materialien“ untersucht worden: ein dichtes und vier poröse Materialien, die alle durch plasmagestützte chemische Gasphasenabscheidung hergestellt wurden. Die strukturellen, chemischen und dielektrischen Eigenschaften der Materialien wurden mit Hilfe der analytischen Durchstrahlungselektronenmikroskopie unter Verwendung eines abbildenden GATAN-Energiespektrometers untersucht. Die Bestimmung der radialen Verteilungsfunktion (RDF) zur Charakterisierung der atomaren Nahordnung ermöglicht uns die Ermittlung mittlerer Bindungslängen und – winkel sowie der mikroskopischen Dichte des Materials. Gegenüber SiO2 wurden in den untersuchten „low-k Materialien“ stark veränderte mittlere Si-O, O-O und Si-Si Bindungslängen gefunden. Dieses wirkt sich natürlich auch auf die mittleren Si-O-Si bzw. O-Si-O Bindungswinkel aus, und wie erwartet war auch die mikroskopische Dichte der „low-k Materialien“ kleiner als die Dichte des SiO2. Elektronen Energieverlustspektroskopie (EELS) und Photoelektronenspektroskopie (XPS) wurden zur Charakterisierung der chemischen Umgebung der Atome in den „low-k Materialien“ herangezogen. Die Energien von Ionisationskanten und die Bindungsenergien der Silizium-2p und Sauerstoff-1s Elektronen waren in den „low-k Materialien“ größer als im SiO2. Die Kohlenstoffatome kamen in den „low-k Materialien“ sowohl sp2 als auch sp3 hybridisiert vor. sp2-Hybridisierung liegt vor, wenn Bindungen wie Si=CH2 und C=C im Netzwerk vorkommen, während sp3 Hybridisierung z.B. dann vorkommt, wenn freie Si-Bindungen durch –CH3 Gruppen abgesättigt werden. Die Anteile an sp2- bzw. sp3-hybridisierten Kohlenstoffatome wurden aus der Feinstruktur der K-Energieverlustkanten des Kohlenstoffs abgeschätzt. Das ergab, daß die meisten Kohlenstoffatome in den „low-k Materialien“ sp2-hybridisiert sind. Die dielektrischen Eigenschaften wurden durch Kramers-Kronig-Transformation einer Energieverlustfunktion ermittelt, die aus dem Niedrigverlust-EELS-Spektrum im Bereich der Plasmonenanregungen gewonnen wurde. Die Bandlücke des SiO2 beträgt ungefähr 9 eV während dichte „low-k Materialien“ aufgrund der Unregelmäßigkeiten in ihrem SiO2-Netzwerk zusätzliche Zustandsdichten innerhalb der Bandlücke aufweisen. Die Erzeugung von Poren im „low-k Material“ vermindert offenbar die Zustandsdichte im Bereich der Bandlücke und erweitert diese im Vergleich zum SiO2. Eine Modellrechnung mit der Dichtefunktionaltheorie für ein Strukturmodell, das den „low-k Materialien“ nahe kommt, ist zum Vergleich mit der experimentell gefundenen kombinierten Zustandsdichte herangezogen worden und zeigt eine gute Übereinstimmung. Die im Standard-Herstellungsprozeß vorkommenden Verfahren des Plasmaätzens und der Plasmaveraschung können die Struktur des „low-k Materials“ z.B. an den Seitenwänden von Ätzgräben verändern. Die gestörten Bereiche wurden mit der energiegefilterten Elektronenmikroskopie untersucht. Dabei wurde gefunden, daß sich die Strukturveränderungen der Seitenwände bis zu einer Tiefe in der Größenordnung von ungefähr 10 Nanometern erstrecken. Diese Bereiche sind verarmt an Kohlenstoff und ähneln folglich mehr einem SiO2-Dielektrikum. Die Kohlenstoffverarmung erstreckt sich in die „low-k Schicht“ in Form eines gaussartigen Profils mit maximaler Kohlenstoffkonzentration in der Mitte der Schicht. Die Sauerstoffkonzentration und die mikroskopische Dichte steigen in der Nähe der Seitenwände.

The charge and spin density correlations in a one dimensional electron gas (1DEG) confined in a semiconductor quantum wire structure at zero temperature are studied. The dielectric formulation of the many--body problem is employed and the longitudinal dielectric function, local-field correction, static structure factor, pair correlation function, ground state energy, compressibility, spin-dependent effective interaction potentials, paramagnon dispersion and static spin response function of the 1DEG are computed within the self-consistent field approximations of Singwi et al., known as the STLS and SSTL. The results are compared with those of other groups, and those obtained for two-dimensional electron gas systems whenever it is possible. It is observed that the SSTL satisfies the compressibility sum rule better than the STLS. Calculating the ground state energy of the 1DEG in unpolarized and fully polarized states, it is shown that both STLS and SSTL predict a Bloch transition for 1DEG systems at low electron densities. Finally, the coupled plasmon-phonon modes in semiconductor quantum wires are calculated within the Fermi and Luttinger liquid theories. The coupling of electrons to bulk longitudinal optical phonons without dispersion and to acoustic phonons via deformation potential with a linear dispersion are considered. Using the dielectric formalism, a unified picture of the collective coupled plasmon-phonon modes is presented. Considerable differences between the predictions of the Fermi and Luttinger liquid approaches at large wave vector values, which may be observed experimentally, are found.