No description available.

Numerical cognition has been shown to share many aspects of spatial cognition, both behavioural and neurological. However, it is unclear whether a particular type of spatial cognition, visuospatial mental imagery (VSMI), may play a role in symbolic numerical representation. In this thesis, I first show that mental rotation, a form of VSMI, is related to two measures of basic numerical representation. I then show that number-space synaesthesia (NSS), a rare type of VSMI involving visualised spatial layouts for numbers, does not show an advantage in mental rotation, but shows interference in number line mapping. I next present a study investigating links between NSS and the ability to learn novel numerical symbols. I demonstrate that NSS shows an advantage at learning novel numerals, and that transcranial random noise stimulation, which increases cortical excitability, confers broadly similar advantages that nonetheless differ in subtle ways. I present a study of transcranial alternating current stimulation on the same symbol learning paradigm, which fails to demonstrate effects. Lastly, I present data showing that strength of numerical representation in these newly-learnt symbols is correlated with a measure of mental rotation, and also with visual recognition ability for the symbols after, but not before, training. All together, these findings suggest that VSMI does indeed play a role in numerical cognition, and that it may do so from an early stage of learning symbolic numbers.

Cette thèse porte sur la commande de réseaux multi-terminaux à courant continu (MTDC) basés sur des convertisseurs multiniveaux modulaires (MMCs).Tout d’abord, notre attention se focalise sur l'énergie stockée en interne dans le MMC qui constitue un degré de liberté additionnel apporté par sa topologie complexe. Afin d’en tirer le meilleur parti, les limites de l’énergie interne sont formulées mathématiquement.Afin de maîtriser la dynamique de la tension DC, l’utilisation de ce nouveau degré de liberté s’avère d’une grande importance. Par conséquent, une nouvelle de stratégie de commande, nommée «Virtual Capacitor Control», est proposée. Cette nouvelle méthode de contrôle permet au MMC de se comporter comme s’il possédait un condensateur de taille réglable aux bornes, contribuant ainsi à l’atténuation des fluctuations de la tension DC.Enfin, la portée de l’étude est étendue au réseau MTDC. L'un des défis majeurs pour un tel système est de faire face à une perte soudaine d'une station de convertisseur qui peut entraîner une grande variation de la tension du système. A cet effet, la méthode de statisme de tension est la plus couramment utilisée. Cependant, l'analyse montre que l'action de contrôle souhaitée risque de ne pas être réalisée lorsque la marge disponible de réserve de puissance du convertisseur est insuffisante. Nous proposons donc une nouvelle structure de contrôle de la tension qui permet de fournir différentes actions en fonction du signe de l'écart de la tension suite à une perturbation, associée à un algorithme qui détermine les paramètres de statisme en tenant compte du point de fonctionnement et de la réserve disponible à chaque station. / The scope of this thesis includes control and management of the Modular Multilevel Converter (MMC)-based Multi-Terminal Direct Current (MTDC).At first, our focus is paid on the internally stored energy, which is the important additional degree of freedom brought by the complex topology of MMC. In order to draw out the utmost of this additional degree of freedom, an in-depth analysis of the limits of this internally stored energy is carried out, and they are mathematically formulated.Then, this degree of freedom of the MMC is used to provide a completely new solution to improve the DC voltage dynamics. A novel control strategy, named Virtual Capacitor Control, is proposed. Under this control, the MMC behaves as if there were a physical capacitor whose size is adjustable. Thus, it is possible to virtually increase the equivalent capacitance of the DC grid to mitigate the DC voltage fluctuations in MTDC systems.Finally, the scope is extended to MMC-based MTDC grid. One of the crucial challenges for such system is to cope with a sudden loss of a converter station which may lead to a great variation of the system voltage. The voltage droop method is commonly used for this purpose. The analysis shows that the desired control action may not be exerted when the available headroom of the converter stations are insufficient. We thus propose a novel voltage droop control structure which permits to provide different actions depending on the sign of DC voltage deviation caused by the disturbance of system voltage as well as an algorithm that determines the droop parameters taking into account the operating point and the available headroom of each station.

Made available in DSpace on 2016-03-15T19:40:41Z (GMT). No. of bitstreams: 1 Rita dos Santos de Carvalho Picinini.pdf: 1897105 bytes, checksum: 40db215aab8bca0781df1d15de88b3d3 (MD5) Previous issue date: 2009-01-27 / Fundo Mackenzie de Pesquisa / Different mathematical skills have been investigated over time and, with the advance of neuroimaging techniques, such as PET (Positron Emission Tomography) and fMRI (functional Magnetic Resonance), central components of arithmetical processing have been identified in the parietal and the pre-frontal cortices. Besides the advances of the neuroimaging techniques, other techniques such as non-invasive brain modulation have also been studied such as the transcranial magnetic stimulation (TMS) and the transcranial direct current stimulation (TDCS) in the involvement of cognitive functions in the area of calculation. This study aimed at investigating the impact of anodal TDCS applied over the left dorsolateral pre-frontal cortex (LDLPFC), right parietal cortex (RPC), left parietal cortex (LPC) while the subject was performing multiplication operations. Fifteen healthy volunteers, students of psychology, aged between 18 and 30 years old, have held subtests of the WAIS III and the multiplication task. The results showed that the anodal TDCS over the RPC improved the performance of men regarding the number of rightness. The influence of TDCS on volunteers who had worse performance took place not on complex tasks, but simple arithmetical ones. Besides, the influence of TDCS on volunteers who had better performance was in complex tasks, not simple ones. These results show that the effects of the TDCS on a certain function depend on the baseline values of each volunteer. The other stimulation conditions over the LDLPFC and LPC did not show any significant results. The TDCS can bring a beneficial effect in calculation tasks, depending on the intensity, polarity, time and location of stimulation, resulting in the increased or diminished cortex excitability. / Diferentes habilidades matemáticas vêm sendo investigadas ao longo dos tempos e, com o avanço das técnicas de neuroimagem, como PET (Tomografia por emissão de Pósitrons) e fMRI (ressonância magnética funcional) componentes centrais no processamento aritmético vêm sendo identificados em córtex parietal e pré-frontal. Além do avanço das técnicas de neuroimagem, outras técnicas como de modulação cerebral não-invasiva também vêm sendo estudadas, como Estimulação Magnética Transcraniana (EMT) e a Estimulação Transcraniana por Corrente Contínua (ETCC) no envolvimento das funções cognitivas com a área de cálculo. Este estudo teve como objetivo investigar o impacto da ETCC anódica quando aplicada no Córtex Pré-Frontal Dorsolateral (CPFDLE), Córtex Parietal Direito (CPD), Córtex Parietal Esquerdo (CPE) no desempenho em operações de multiplicação. Quinze voluntários saudáveis, estudantes de psicologia, com faixa etária entre 18 e 30 anos, realizaram subtestes do WAIS III e a tarefa de multiplicação. Os resultados desse estudo mostraram que a ETCC anódica aplicada no CPD melhorou o desempenho dos homens em relação ao número de acertos. A influência da ETCC em participantes com pior desempenho em Aritmética se deu em tarefa simples de multiplicação, mas não complexa, ao passo que a influência da ETCC em participantes com melhor desempenho em Aritmética se deu em tarefa complexa de multiplicação, mas não em simples. Tais resultados sinalizam que os efeitos da estimulação em uma determinada função dependem dos valores de linha de base de cada participante As outras condições de estimulações, CPFDLE e CPE não resultaram em efeitos significativos. A ETCC pode produzir um efeito benéfico em tarefas de cálculo, dependendo da intensidade, polaridade, tempo e localização da estimulação, podendo resultar em aumento ou diminuição na excitabilidade do córtex.

L’exécution d’un mouvement purement unilatéral nécessite le recrutement d’un vaste réseau de régions corticales et sous-corticales, qu’il est possible de regrouper sous le terme de réseau de transformation non-miroir. Ce réseau doit contrer la tendance naturelle du cerveau à exécuter des mouvements de manière bilatérale et synchronisée, en miroir. Malgré l’efficacité de ce réseau, une activité miroir subtile est observée au niveau de la main qui doit demeurer inactive lors de mouvements unilatéraux chez l'humain en santé. Ce débordement moteur doit être inhibé grâce aux interactions interhémisphériques transitant par le corps calleux (CC), la plus grande commissure du cerveau servant de pont entre les hémisphères. Ainsi, la commande motrice peut être acheminée efficacement du cortex moteur primaire (M1) controlatéral à la main devant exécuter une l’action par l’entremise de la voie corticospianle (VCS). En plus du CC, le cortex prémoteur (CPM) joue un rôle important dans ce réseau puisque son interférence via la stimulation magnétique transcrânienne (SMT) entraîne une augmentation de l’activité miroir dans la main devant normalement demeurer inactive lors d’un mouvement unilatéral. Ainsi, toute modification dans ce réseau ou dans les processus interhémisphériques peut provoquer l’augmentation des mouvements miroirs (MM). À ce jour, aucune étude n’a tenté de moduler ces interactions pour réduire la présence de MM. Ainsi, les études cliniques et méthodologiques qui composent la présente thèse comportent deux objectifs principaux : (1) déterminer si la stimulation électrique transcrânienne à courant direct (SÉTcd) permet l'étude du réseau de transformation non-miroir, et si cette technique est en mesure de diminuer l’intensité des MM chez des individus en santé; (2) caractériser l'anatomie et le fonctionnement du cerveau dans deux populations d’individus porteurs de mutations génétiques affectant le développement de structures impliquées dans la latéralisation du mouvement, le CC et la VCS. L’article 1 décrit les assisses théoriques de la présente thèse grâce à une revue de la littérature portant sur les interactions interhémisphériques dans le mouvement unilatéral. L’article 2 suggère que la SÉTcd est un outil efficace dans l'étude du réseau de transformation non-miroir puisque le protocole de stimulation bilatérale a permis d’augmenter la présence et l’intensité des MM physiologiques (MMp) chez des individus en santé. Cependant, il n’a pas été possible de moduler à la baisse les MMp malgré différents protocoles de stimulation. Dans l’article 3, l'étude d’individus nés sans CC a mis en lumière une augmentation de l’épaisseur corticale au niveau des aires somatosensorielles (S1) et visuelles (V1) primaires, de même qu’au niveau de la représentation de la main dans M1. Ces différences demeurent toutefois légères considérant l’importance du CC. L’article 4 a démontré que les individus porteurs d’une mutation sur le gène DCC présentent un phénotype similaire à celui de porteurs d'une mutation sur le gène RAD51. Ces mutations affectent la migration de la VCS au niveau des pyramides. La VCS projette ainsi aux deux mains, causant des mouvements miroirs congénitaux (MMC). Cette pathologie est également accompagnée d’anomalies neurophysiologiques, telle qu’une inhibition interhémisphérique (IIH) réduite. En somme, les études composant cette thèse ont permis d’approfondir notre connaissance de certaines structures responsables de la latéralisation adéquate du mouvement, tout en décrivant de nouvelles méthodes pour en étudier le fonctionnement. / The execution of purely unilateral hand movements requires the recruitment of vast cortical and subcortical brain areas known as the non-mirroring network. This network counteracts the natural tendency of the brain, which tends to execute movements in a bilateral and synchronized manner. Despite the efficacy of the non-mirroring network in restricting motor output to contralateral limbs, subtle mirroring can be observed in the inactive hand of healthy individuals when performing a unilateral task. This motor overflow needs to be inhibited through interhemispheric projections coursing through the corpus callosum (CC), the biggest white matter tract of the brain. This mechanism makes it possible for motor commands originating from the primary motor cortex (M1) to reach the contralateral hand performing an action via the corticospinal tract (CST). It has been suggested that the premotor cortex (PMC) is an important component of the non-mirroring network since its interference with transcranial magnetic stimulation (TMS) enhances mirror activity in the inactive, mirror hand when a unilateral hand movement is performed. Indeed, modulation of parts of the non-mirroring network and interhemispheric projections can result in enhanced mirror movements (MM). It is not known whether specific interventions can decrease MM. The clinical and methodological studies that compose the present thesis have two main objectives: (1) Determine whether transcranial direct-current stimulation (tDCS) can be used to assess non-mirroring network function and reduce MM intensity in healthy individuals; (2) Characterize brain function and anatomy in two clinical populations presenting specific genetic mutations that affect the development of structures involved in the lateralization of movement (the CC and CST). Article 1 provides a theoretical basis for the present essay through a review of the literature pertaining to interhemispheric interactions in the production of unilateral movements. Article 2 shows that tDCS can be used to study the non-mirroring network since a bilateral stimulation protocol significantly increased the intensity of physiological MM (pMM) in healthy individuals. However, despite different stimulation protocols, it was not possible to reduce pMM. In article 3, anatomical MRIs performed in individuals born without a CC revealed increases in cortical thickness in primary somatosensory (S1) and visual (V1) cortex, as well as in the hand representation of M1. Taken together, however, the data suggest that anatomical differences between acallosal patients and healthy participants are relatively subtle considering the size and function of the CC. Article 4 showed that individuals presenting a mutation on the DCC gene display a phenotype similar to that of individuals presenting a mutation on the RAD51 gene. DCC mutations affect the crossing of the CST at the pyramidal level, resulting in a CST that projects to both hands simultaneously, causing congenital mirror movements (CMM). This pathological condition is accompanied by neurophysiological anomalies that include reduced interhemispheric inhibition (IHI). In summary, the studies comprised in the present thesis significantly increase our knowledge of the specific brain structures that enable the proper lateralization of movements. It also describes novel methods that can be used to investigate the non-mirroring network.

No description available.

Currently conventional sources like coal, petroleum and natural gas meet the energy requirements of developing and undeveloped countries. Over a period of time there is high risk of these energy sources getting depleted. Hence an alternate source of energy i.e. renewable energy is the need of the hour. The advantages of renewable energy like higher sustainability, lesser maintenance, low cost of operation, and minimal impact on the environment make the role of renewable energy sources significant. Out of the various renewable energy sources like solar energy, wind energy, hydropower, biogas, tidal and geothermal, usage of solar energy is gradually increasing. Among various solar energy sources, Photovoltaics has dominated over the past two decades since it is free clean energy and availability of abundant sunlight on earth. Over the past few decades, thin film solar cells (TFSC) have gained considerable interest as an economically feasible alternative to conventional silicon (Si) photovoltaic devices. TFSCs have the potential to be as efficient as Si solar cells both in terms of conversion efficiency as well as cost. The advantages of TFSC are that they are easy to prepare, lesser thickness, requires lesser materials, light weight, low cost and opto-electronic properties can be tuned by varying the process parameters. The present study is focused on the fabrication of AgInS2/ZnS heterojunction thin film solar cell. AgInS2 absorber layer is deposited using both vacuum (sputtering/sulfurization) and non-vacuum (ultrasonic spray pyrolysis) techniques. ZnS window layer is prepared using thermal evaporation technique, detailed experimental investigation has been conducted and the results have been reported in this work. The thesis is divided into 6 chapters. Chapter 1 gives general introduction about solar cells and working principle of solar cell. It also discusses thin film solar cell technology and its advantages. Layers of thin film solar cell structure, Significance of each layers and possible materials to be used are emphasized. A detailed overview of the available literature on both AgInS2 absorber layer and ZnS window layer has been presented. Based on the literature review, objectives of the present work are defined. Chapter 2 explains the theory and experimental details of deposition techniques used for the growth of AgInS2 and ZnS films. Details of characterization techniques to study film properties are described in detail. Chapter 3 presents a systematic study of AgInS2 thin films deposited by sulfurization of sputtered Ag-In metallic precursors. Initially, AgInS2 films are deposited by varying the substrate temperature and properties of as-deposited films are characterized. Structural, morphological, electrical and optical properties of AgInS2 films are explained. From these studies, samples with better properties at particular substrate temperature are optimized. By fixing the substrate temperature, deposition time of silver is varied by keeping other deposition conditions same and the properties of films are discussed. It was observed that deposition time of silver doesn’t have much impact on structural properties of AgInS2 films. However, opto-electric properties of AgInS2 films are enhanced. Based on characterization studies, deposition time of silver is optimized. Deposition time of indium is varied by keeping substrate temperature and silver deposition to optimized value. The properties of as-deposited films are discussed. Based on the above studies, the optimized p type films have a band gap of 1.64 eV, carrier concentration of 1013 ions/cm3 and Resistivity of order 103 Ω-cm. Chapter 4 presents a systematic study of AgInS2 thin films deposited by ultrasonic spray pyrolysis. AgInS2 films are deposited by varying the substrate temperature and properties of as deposited films are characterized. Structural, morphological, electrical and optical properties of AgInS2 films are explained. From these studies, samples with better properties at particular substrate temperature are optimized. By fixing the substrate temperature, concentration of silver molarity in the precursor solution is varied by keeping other deposition conditions same and the properties of films are discussed. Structural, optical and electrical properties of AgInS2 films are enhanced with the increase in silver concentration. Based on characterization studies, concentration of silver is optimized. Similarly concentration of indium molarity in the precursor solution is varied and the properties of as-deposited films are discussed. Finally, sulfur molarity in the precursor solution is varied and properties of films are discussed. It was observed that increasing sulfur after certain limit does not have any effect on the properties of the films. Based on the above studies, this method resulted in the films with resistivity of 103 Ω-cm and band gap of 1.64 eV. These films showed a carrier concentration of 1013 ions/cm3. Chapter 5 describes the growth of ZnS films using thermal evaporation technique. Influence of thickness on the properties of ZnS films is explained. Samples with good crystallinity, high transmission, and wider gap are selected for device fabrication. This p type layer showed a band gap of 3.52 eV. Solar cells have been fabricated using the AgInS2 films developed by both sputtering and ultrasonic spray pyrolysis techniques. A maximum cell efficiency of 0.92 percent has been achieved for the cell with 0.950 µm thick sputtered AgInS2 layer and thermally evaporated 42 nm thick ZnS layer. In comparison, the ultrasonic spray pyrolysis deposited films gave an efficiency of 0.54 percent. These values are comparable to those mentioned in a couple of reports earlier. Chapter 6 summarizes the conclusions drawn from the present investigations and scope of future work is suggested.

Les convertisseurs de forte puissance sont des éléments critiques des futurs réseaux HVDC. À ce titre, leur fiabilité et leur endurance sont primordiales. La défaillance d’un composant se produit soit en circuit ouvert, ou en court-circuit. Le composant défaillant en circuit ouvert est inadmissible pour les convertisseurs utilisant une topologie de mise en série. En particulier, dans certaines applications HVDC, les modules doivent être conçus de telle sorte que lorsqu'une défaillance se produit, le module défaillant doit se comporter comme un court-circuit et supporter ainsi le courant nominal qui le traverse. Un tel comportement est appelé “défaillance en court-circuit” ou “failure-to-short-circuit”. Actuellement, tous les modules de puissance ayant un mode de défaillance en court-circuit disponibles dans le commerce utilisent des semi-conducteurs en silicium. Les potentialités des semi-conducteurs en carbure de silicium (SiC) poussent, aujourd’hui, les industriels et les chercheurs à mener des investigations pour développer des modules Fail-to-short à base des puces SiC. C’est dans ce contexte que se situe ce travail de thèse, visant à concevoir un module à base de puces SiC offrant un mode de défaillance de court-circuit. Pour cela nous présentons d’abord une étude de l’énergie de défaillance des puces SiC, afin de définir les plages d’activation du mécanisme Fail-to-short. Ensuite, nous démontrons la nécessité de remplacer les interconnexions classiques (fils de bonding) par des contacts massifs sur la puce. Enfin, une mise en œuvre est présentée au travers d’un module “demi pont” à deux transistors MOSFET. / The reliability and endurance of high power converters are paramount for future HVDC networks. Generally, module’s failure behavior can be classified as open-circuit failure and short-circuit failure. A module which fails to an open circuit is considered as fatal for applications requiring series connection. Especially, in some HVDC application, modules must be designed such that when a failure occurs, the failed module still able to carry the load current by the formation of a stable short circuit. Such operation is referred to as short circuit failure mode operation. Currently, all commercially available power modules which offer a short circuit failure mode use silicon semiconductors. The benefits of SiC semiconductors prompts today the manufacturers and researchers to carry out investigations to develop power modules with Fail-to-short-circuit capability based on SiC dies. This represents a real challenge to replace silicon power module for high voltage applications in the future. The work presented in this thesis aims to design a SiC power module with failure to short-circuit failure mode capability. The first challenge of the research work is to define the energy leading to the failure of the SiC dies in order to define the activation range of the Fail-to-short mechanism. Then, we demonstrate the need of replacing the conventional interconnections (wire bonds) by massive contacts. Finally, an implementation is presented through a "half bridge" module with two MOSFETs.

Le développement de l’énergie renouvelable loin des zones urbaines demande le transport d'une grande quantité d’énergie sur de longues distances. Le transport d’électricité en courant continu haute tension (HVDC) présente beaucoup d’avantages par rapport à celui en courant alternatif. Dans ce contexte il est nécessaire de développer des convertisseurs de puissance constitués par des composants électroniques très haute tension, 10 à 30 kV. Si les composants en silicium ne peuvent pas atteindre ces objectifs, le carbure de silicium (SiC) se positionne comme un matériau semiconducteur alternatif prometteur. Pour supporter des tensions élevées, une région de "drift", relativement large et peu dopée constitue le cœur du composant de puissance. En pratique l’obtention d’une tension de blocage effective dépend de plusieurs facteurs et surtout de la conception d'une terminaison de jonction adaptée. Cette thèse présente une méthode pour améliorer la tenue en tension des composants en SiC basée sur l’utilisation des terminaisons de jonctions : Deep Trench Termination. Cette méthode utilise une tranchée gravée profonde en périphérie du composant, remplie avec un matériau diélectrique pour supporter l'étalement des lignes équipotentielles. La conception de la diode avec cette terminaison a été faite par simulation TCAD, avec deux niveaux de tension 3 et 20 kV. Les travaux ont pris en compte les caractéristiques du matériau, les charges à l’interface de la tranchée et les limites technologiques pour la fabrication. Ce travail a abouti sur la fabrication de démonstrateurs et leur caractérisation pour valider notre conception. Lors de la réalisation de ces structures, la gravure plasma du SiC a été optimisée dans un bâti ICP de manière à obtenir une vitesse de gravure élevée et en conservant une qualité électronique de l'état des surfaces gravées. Cette qualité est confirmée par les résultats de caractérisation obtenus avec des tenues en tension proches de celle idéale. / The development of renewable energy away from urban areas requires the transmission of a large amount of energy over long distances. High Voltage Direct Current (HVDC) power transmission has many advantages over AC power transmission. In this context, it is necessary to develop power converters based on high voltage power electronic components, 10 to 30 kV. If silicon components cannot achieve these objectives, silicon carbide (SiC) is positioned as a promising alternative semiconductor material. To support high voltages, a drift region, relatively wide and lightly doped is the heart of the power component. In practice obtaining an effective blocking voltage depends on several factors and especially the design of a suitable junction termination. This thesis presents a method to improve the voltage withstand of SiC components based on the use of junction terminations: Deep Trench Termination. This method uses a trench deep etching around the periphery of the component, filled with a dielectric material to support the spreading of the equipotential lines. The design of the diode with this termination was done by TCAD simulation, with two voltage levels 3 and 20 kV. The work took into account the characteristics of the material, the interface charge of the trench and the technological limits for the fabrication. This work resulted in the fabrication of demonstrators and their characterization to validate the design. During the production of these structures, plasma etching of SiC has been optimized in an ICP reactor so as to obtain a high etching rate and maintaining an electronic quality of the state of etched surfaces. This quality is confirmed by the results of characterization obtained with blocking voltage close to the ideal one.

This diploma thesis treats the possibilities of the black-white picture depiction in pseudo colors (Pseudocolor). The individual methods, software or hardware are described there and the detailed block scheme of the system Pseudocolor is suggested. The block scheme is created on the basis of gained theoretical knowledge. In the thesis, individual functional blocks of the scheme are described and their circuit designs are realized. Some of the functional blocks are simulated by the PSpice program and accompanied by corresponding signal process data. The suitable choice of the active and passive components is performed, from which the general integration of the system Pseudocolor is made. All the source materials for the realization of the device are given there – double-sided drawing of the printed circuit, layout and specification of the components.