Drug metabolism is a specialised subset of xenobiotic metabolism, pertaining to the breakdown and elimination of pharmaceutical drugs. The enzymes involved in these pathways are the cytochrome P450 family of isozymes. Metabolism is an important factor in determining the pharmacological effects of drugs. The main aim of this study was to develop a system whereby the major metabolites of drugs can be produced in vitro. An in vitro system was developed and optimised using commercially prepared microsomes from rat liver and coumarin (by monitoring its conversion to 7-hydroxycoumarin) as a model. The optimum running conditions for the incubations were 50 μM coumarin, 50 μg protein/ml microsomes, 1 mM NADP⁺, 5 mM G6P and 1U/ml G6PDH incubated for 30 minutes at 38℃. The HPLC method for the detection of coumarin and 7-hydroxycoumarin was also validated with respect to linearity, reproducibility, precision, accuracy and lower limits of detection and quantification. The system developed was then tested using microsomes prepared from fresh bovine liver on these ten drugs of interest in doping control in horse racing: diazepam, nordiazepam, oxazepam, promazine, acepromazine, chlorpromazine, morphine, codeine, etoricoxib and lumiracoxib. The bovine liver microsomes were prepared using differential centrifugation and had activity on a par with the commercial preparations. This in vitro system metabolised the drugs and produced both phase I and II metabolites, similar to those observed in humans and horses in vivo. For example, the major metabolites of the benzodiazepine drug, diazepam, nordiazepam, temazepam and oxazepam as well as the glucuronidated phase II products were all found after incubations with the bovine liver microsomes. The metabolism of the drugs was also investigated in silico using the computational procedure, MetaSite. MetaSite was able to successfully predict known metabolites for most of the drugs studied. Differences were observed from the in vitro incubations and this is most likely due to MetaSite using only human cytochrome P450s for analysis.

Les recherches menées dans le domaine des piles à combustibles à membrane échangeuse de protons (PEMFCs) depuis le début des années 1980 ont permis de considérablement améliorer leurs performances. Deux principaux verrous persistent néanmoins au niveau des catalyseurs : le coût et la stabilité. En effet, pour obtenir de bonnes performances, il faut que la couche active cathodique soit relativement chargée en métaux nobles, comme le platine, ce qui a un coût important. En plus d’être couteux, les catalyseurs utilisés commercialement sont sujets à différents phénomènes de dégradation, notamment l’oxydation du support carboné. Les travaux décrits dans cette thèse visent à produire des catalyseurs bimétalliques supportés sur des nanotubes de carbones dopés, afin de préparer des structures actives pour la Réaction de Réduction de l’Oxygène (ORR) et résistantes dans les conditions de fonctionnement des PEMFCs. La première étape a été la synthèse de nanotubes de carbone dopés à l’azote (N-CNT) ou au soufre (S-CNT). Différents traitements et fonctionnalisations ont été testés pour faciliter le dépôt et la dispersion de nanoparticules métalliques à la surface des nanotubes, faciliter l’intégration du catalyseur dans la couche active et ralentir le phénomène d’oxydation du carbone. Des nanoparticules bimétalliques PtCo et PtNi ont été préparées en utilisant une méthode de synthèse originale utilisant un liquide ionique comme stabilisant. Tous les catalyseurs ainsi synthétisés ont présenté des surfaces électro-actives (ECSA) élevées et de bonnes activités pour l’ORR. Les plus pertinents ont été étudiés en mono-cellules de 25 cm². Ils présentent de meilleurs résultats aux tests de dégradation accélérés du support carboné, comparés à une référence commercial PtCo supporté sur noir de carbone. Une diminution du chargement en platine de la couche active cathodique de 0,4 mgPt/cm² à 0,2 mgPt/cm² a permis d’améliorer les performances de la mono-cellule en diminuant notamment les limitations dûes au transport de matière dans la couche active. / Researches on the field of proton exchange membrane fuel cells (PEMFCs) since the early 1980s have greatly improved their overall performances. Nevertheless, there are still two main issues with the catalyst: the cost and the stability. In order to obtain good performances, the cathodic active layer generally shows very high loadings with noble metals such as platinum that explain the high costs. In addition to this cost, various phenomena of degradation and in particular the oxidation of the carbon support can be observed on commercially used catalysts. The aims of this work is to produce bimetallic catalysts supported on doped carbon nanotubes in order to obtain active structures for the Oxygen Reduction Reaction (ORR) and resistant under the operating conditions of the PEMFCs. The first step was the synthesis of carbon nanotubes doped with nitrogen (N-CNT) or with sulfur (CSx). Different treatments and functionalizations have been tested to facilitate the deposition and the distribution of metal nanoparticles on the surface of the nanotubes and to facilitate the integration of the catalyst in the active layer. Carbon nanotubes have been chosen because they are known to be less reactive for oxidation than carbon blacks. The bimetallic nanoparticles PtCo and PtNi were prepared using an original synthetic route using an ionic liquid as a stabilizer. All the catalysts synthesized exhibited good electro-active surface area (ECSA) and excellent activities for ORR. The most relevant catalysts were studied in monocells of 25 cm². They show better results in accelerated degradation tests of the carbon support, compared to a PtCo commercial reference supported on carbon black. A reduction in the platinum loading of the cathodic active layer from 0.4 mgPt/cm² to 0.2 mgPt/cm² improves the performances of cell by reducing the limitations due to the transport of material in the active layer.

La croissance localisée de SiC dopé p par un mécanisme Vapeur-Liquide-Solide (VLS) a été effectuée sur substrats SiC-4H (0001) 8°off et diamant (100). Pour ce faire, des motifs constitués d'un empilement silicium-aluminium sont fondus puis alimentés en propane. Dans le cas de l'homoépitaxie de SiC-4H, il a été démontré que la quantité limitée de phase liquide initiale entraine une évolution constante des paramètres de croissance en raison de l'appauvrissement graduel en silicium. Il est toutefois possible de trouver des conditions de croissance satisfaisantes (alliage contenant 40 at% Si, 1100 °C) résultant en un dépôt conforme sur l'ensemble des motifs avec une morphologie step-bunchée. A partir de tels dépôts, des contacts ohmiques de très faible résistivité (jusqu'à 1,3.10-6 Ω.cm2) ont été mesurés et des diodes PiN ont été fabriquées et caractérisées. Dans le cas de la croissance de SiC sur diamant, la forte réactivité entre l'alliage Si-Al liquide et le substrat diamant conduit à la formation d'un dépôt dense et polycristallin de SiC-3C par un mécanisme de dissolution-précipitation. Nous avons montré que la formation préalable d'une couche tampon nanométrique de SiC par siliciuration du substrat de diamant (réaction solide-solide entre une couche de Si et le diamant) permet d'obtenir une croissance épitaxiale de SiC-3C en ilots, avec les relations [110] SiC // [110] diamant et (100) SiC // (100) diamant. Il n'a cependant pas été possible de former une couche complète et épitaxiale de SiC sur diamant par VLS localisée. Nous avons toutefois montré que cela est réalisable par dépôt chimique en phase vapeur (CVD) en utilisant la même étape de siliciuration / The localized growth of p-doped SiC by Vapor-Liquid-Solid (VLS) mechanism was made on (0001) 8°off 4H-SiC and (100) diamond substrates. A silicon-aluminium stacking, localized on top of the substrate, is used after melting as the liquid phase for the growth, carbon being brought by the propane of the gas phase. Regarding the homoepitaxial growth of 4H-SiC, the limited amount of liquid phase leads to a significant consumption of silicon during the growth which is responsible for a continuous variation of the growth parameters. Satisfying growth conditions can therefore be found (40 at% Si alloy, 1100 °C) leading to the formation of a step-bunched layer on the initial Si-Al patterns. Very Low resistivity ohmic contacts (as low as 1.3x10-6 Ω.cm2) and PiN diodes were successfully fabricated from these deposits. Regarding the SiC growth on diamond, the high reactivity between the Si-Al liquid alloy and the diamond substrate leads to the polycrystalline growth of 3C-SiC by a dissolution-precipitation mechanism. It is thus necessary to use a SiC buffer layer in order to achieve an epitaxial growth. This buffer layer, grown by a solid-solid reaction between silicon (deposited by CVD) and the diamond called silicidation, favors the epitaxial growth of 3C-SiC ([110] SiC // [110] diamond and (100) SiC // (100) diamond) during the later VLS growth. Considering the 3D growth mechanism that takes place the formation of a single-crystalline layer from these epitaxial islands seems difficult. Such single-crystalline layer can be achieved using chemical vapor deposition (CVD) after the silicidation step of the diamond substrates

The main goal of the paper was the impact of negative events, in our case doping cases, on sponsors of cycling teams and riders. It also discuss view of spectators and fans on doping and sponsorship. As a method it's used an event study, which measure the impact of event on market value of firms in time of the event. In the paper are built three models, which analyse different doping cases and their impact on sponsors firms. All three models didn't show significant negative impact on market value of sponzoring firms.

Anomalous Hall behavior of HgCdTe refers to a "double cross-over" feature of the Hall coefficient in p-type material, or a peak in the Hall mobility or Hall coefficient in n-type material. A magnetoconductivity tensor approach was utilized to identify presence of two electrons contributing to the conduction as well as transport properties of each electron in the material. The two electron model for the mobility shows that the anomalous Hall behavior results from the competition of two electrons, one in the energy gap graded region near the CdZnTe/HgCdTe interface with large band gap and the other in the bulk of the LPE film with narrow band gap. Hg0.78Cd0.22Te samples grown by LPE on CdZnTe(111B)-oriented substrates were exposed to various doses of thermal neutrons (~1.7 x 1016 - 1.25 x 1017 /cm2) and subsequently annealed at ~220oC for ~24h in Hg saturated vapor to recover damage and reduce the presence of Hg vacancies. Extensive Magnetotransport measurements were performed on these samples. SIMS profile for impurities produced by neutron irradiation was also obtained. The purpose for this study is to investigate the influence of neutron irradiation on this material as a basis for further study on HgCdTe74Se. The result shows that total mobility is observed to decrease with increased neutron dose and can be fitted by including a mobility inverse proportional to neutron dose. Electron introduction rate of thermal neutron is much smaller than that of fission neutrons. Total recovering of the material is suggested to have longer time annealing. Using Kane's model, we also fitted carrier concentration change at low temperature by introducing a donor level with activation energy changing with temperature. Results on Se diffusion in liquid phase epitaxy (LPE) grown HgCdTe epilayers is reported. The LPE Hg0.78Cd0.22Te samples were implanted with Se of 2.0×1014/cm2 at 100keV and annealed at 350-450oC in mercury saturated vapor. Secondary ions mass spectrometry (SIMS) profiles were obtained for each sample. From a Gaussian fit we find that the Se diffusion coefficient DSe is about one to two orders of magnitude smaller than that of arsenic. The as-implanted Se distribution is taken into account in case of small diffusion length in Gaussian fitting. Assuming a Te vacancy based mechanism, the Arrhenius relationship yields an activation energy 1.84eV. Dislocations introduced in HgCdTe materials result in two energy levels, where one is a donor and one is an acceptor. Hydrogenation treatment can effectively neutralize these dislocation defect levels. Both experimental results and theoretical calculation show that the mobility due to dislocation scattering remains constant in the low temperature range (<77K), and increases with temperature between 77K and 150K. Dislocation scattering has little effect on electrical transport properties of HgCdTe with an EPD lower than 107/cm2. Dislocations may have little effect on carrier concentration for semiconductor material with zinc blende structure due to self compensation.

A presença de defeitos intrínsecos na estrutura do óxido de zinco possibilita a sua dopagem com outros materiais, como o bismuto. O óxido de zinco dopado com bismuto (BZO) preparado via síntese hidrotermal assistida por microondas (MAHS) foi estudado em relação à sua concentração de dopante e caracterização morfológica. Para a síntese do BZO foi realizada pela reação de uma solução de nitrato de zinco (precursor) e nitrato de bismuto, usando com hidróxido de amônio para ajuste do pH. Para realizar a reação, a solução de nitrato de zinco foi foi aquecida em um microondas por intervalos de 5, 10 e 20 minutos a 200ºC. A dopagem foi realizada com 3 diferentes teores em massa nitrato de bismuto (1, 3 e 6%). Os produtos obtidos foram caracterizados por DRX, MEV e PL, assim como pelo cálculos de band gap por espectroscopia de transmissão. A atividade fotocatalítica foi analisada por ensaios de fotocatálise utilizando corantes orgânicos, azul de metileno (AM) e Rodamina B (RhB). Os resultados indicam que as nanoestruturas de BZO obtidas apresentam tamanhos de cristalitos variando de 5,82 a 8,37 nm. A estrutura morfológica, tipo flor, foi formada com diferentes concentrações de dopantes. Os resultados do PL demonstram que os defeitos aumentam com a dopagem do bismuto. O intervalo de band gap encontrado foi de 2,79 a 3,3 eV e tem potencial de uso em aplicações de fotodegradação. Neste sentido a dopagem de bismuto modificou positivamente o óxido de zinco, já que nos ensaios de fotocatálise, o BZO degradou ambos os corantes, sendo a amostra com 3% de dopagem de bismuto a que obteve os melhores resultados, chegando a degradar 68% do corante de Rodamina B em 1 hora. / Zinc oxide, due to the presence of intrinsic defects, allows doping with other materials, such as bismuth. BZO (zinc oxide doped bismuth), prepared by microwave assisted hydrothermal synthesis (MAHS), was studied dopant concentration and morphological characterization. For the synthesis, zinc nitrate was used as a precursor; for pH control, ammonium hydroxide was used. After the solution was heated in a microwave for 5, 10 and 20 minutes at 200 ° C. Doping was performed with 3 different mass contents of bismuth nitrate (1, 3 and 6%). The products were characterized by DRX, MEV and PL; Band gap calculations by transmission spectroscopy. The photocatalytic activity was analyzed by photocatalysis using organic dyes, methylene blue (AM) and Rhodamine B (RhB). The results indicate that BZO nanostructures were obtained with crystallite sizes ranging from 5.82 to 8.37 nm. The same morphological structure, flower type, was formed with different dopants concentrations. PL demonstrates that defects increase with doping of bismuth. The band gap found was from 2.79 to 3.3 eV and has potential use in photodegradation applications. In this sense, the bismuth doping positively modified the zinc oxide, in the photocatalysis tests BZO degraded both dyes, being the sample with 3% doping of bismuth that obtained the best results, reaching to degrade 68% of the Rhodamine B dye in 1 hour.

Transparency and conductivity are highly desirable qualities in materials for modern gas sensors. Polymer gas sensors have been developed in which the polymer acts as a solid electrolyte. However, these types of sensors are opaque, which limits their potential for integration with dichromatic materials. The development of a sensor integrating conductive polymer films and dichromatic materials requires the implementation of a transparent conductive polymer film. The potential of iodine-doped bisphenol-a polycarbonate films containing bis(ethylenedioxy)-tetrathiafulvalene (BEDO-TTF) dye for sensor applications will be tested through characterization of the films at various stages of their fabrication using Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), transmission Fourier Transform Infrared Spectroscopy (FTIR), Optical Microscopy (OM), and Four Point Probe conductivity measurements (FPP). FTIR results show that there is an interaction between the polycarbonate matrix and the dye-iodine complex. Measured resistivities of the iodine doped films range from 148 Omega-cm to 2.82 kOmega-cm depending on the concentration of the iodine and exposure time. The imaging techniques used show a significant difference in the structure and the surface of the iodine doped-PC-BEDO-TTF films with respect to the bare polycarbonate films or the films mixed with the organic dye. It is also clear that the surface roughness of the prepared conductive films increases with iodine loading. These films have the potential to be used in sensor or photovoltaic applications.

Dans cette thèse, deux semi-conducteurs en séléniure ayant d'excellentes propriétés ont été étudiés afin de développer des matériaux performants pour des applications photoélectriques. Tout d'abord, les nanorodes de Sb2Se3 ont été synthétisés en utilisant une méthode d'injection à chaud, et le plus grand défi associé à la faible conductivité de Sb2Se3 a été relevé en formant des hétérojonctions et/ou par un dopage. Les nanorodes de Sb2Se3 à conductivité électrique nettement améliorée ont été utilisés pour fabriquer des photo-détecteurs prototypes, qui présentent un grand potentiel d'application grâce à leur grande efficacité. Le Sb2Se3 dopés au Sn a été préparé en utilisant un procédé de fusion à haute température. Avec l'augmentation de la concentration en Sn, les cristaux (SnxSb1-x)2Se3 présentent également une grande amélioration de la conductivité et des propriétés photoconductrices. Quatre cibles à base de Sb2Se3 avec la composition chimique de Sb2Se3, Sb2Se3.3, (Sn0.1Sb0.9)2Se3 et Sb2(Se0.9I0.1)3 ont été préparées et les couches minces ont été déposées en utilisant la pulvérisation cathodique. Une étude systématique de la cristallinité, de la morphologie de surface, des propriétés optiques, du type de conduction (p ou n) et des performances photo-électro-chimique des couches minces a été réalisée. Une nouvelle cellule solaire à couches minces de Sb2Se3 avec une quasi-homojonction a été fabriquée pour la première fois et le rendement de conversion atteint déjà un taux très intéressant de 2,65%. Une méthode efficace d'injection à chaud a également été développée pour la synthèse de nano-fleurs uniformes de γ-In2Se3. Une photodiode à hétérojonction formée en déposant une couche mince de nanoflower γ-In2Se3, du type p, sur un substrat en Si de type n, a été fabriquée pour la première fois. Il a été démontré que ce photo-détecteur peut être auto-alimenté avec d'excellentes performances, notamment une réponse rapide et une sensibilité à large bande. / In this dissertation, two different selenide semiconductors with excellent properties have been studied in order to develop high performance materials and devices for photoelectric applications. Firstly, Sb2Se3 nanorods were synthesized via hot-injection method, and the biggest challenge of low conductivity of Sb2Se3 nanorods has been overcome successfully by forming heterojunction and/or doping. The Sb2Se3 nanorods with enhanced electrical conductivity were used for fabricating prototype photodetectors, which show great application potential as highly efficient photodetectors. The Sn-doped Sb2Se3 crystals were successfully prepared by using high-temperature melting process. With increasing Sn doping concentration, the (SnxSb1-x)2Se3 crystals also exhibit a great improvement of conductivity and photoconductive properties. Four Sb2Se3-based targets with the chemical composition of Sb2Se3, Sb2Se3.3, (Sn0.1Sb0.9)2Se3 and Sb2(Se0.9I0.1)3 have been successfully prepared by using high-temperature melting technique. Then thin films have been deposited by using RF magnetron-assisted sputtering. A systematic investigation of the crystallinity, surface morphology, optical properties, p/n type and photo-electro-chemical performance of the thin films has been performed. A novel quasi-homojunction Sb2Se3 thin film solar cells was fabricated for the first time and the highest conversion efficiency obtained in our work reaches already a highly interesting 2.65%. An effective hot-injection method has also been developed for synthesizing uniform γ-In2Se3 nanoflowers. An efficient heterojunction photodiode formed by n-type Si substrate and p-type γ-In2Se3 nanoflower film was fabricated for the first time. It has been demonstrated that this photodetector can be self-powered with excellent performance including fast response and broadband sensibility.

La politique mondiale de réduction des émissions de gaz à effet serre repose en grande partie sur la recherche de nouvelles solutions pour l’industrie cimentaire qui contribue largement aux émissions de CO2. Parmi ces solutions, l’exploitation de ciments riches en silicate bicalcique, Ca2SiO4, ou bélite, qui est sa dénomination cimentaire, semble intéressante puisque le procédé industriel de fabrication requiert une moindre demande en calcaire et une température de cuisson plus basse que dans le cas des ciments Portland. A ce jour, les freins à une exploitation massive par les cimentiers de la bélite sont l’absence ou la lenteur de la réactivité avec l’eau, qui se traduit par une lente montée en résistance mécanique des ciments bélitiques, et le ‘dusting’ ou éclatement au refroidissement du fait de la transformation allotropique β. Les interprétations de ces phénomènes restent, à ce jour, contradictoires car elles reposent bien souvent sur l’analyse de la bélite dans un clinker, avec toute sa complexité. Aussi, nous avons choisi d’entreprendre une étude fondamentale des propriétés de β-Ca2SiO4. Afin de valoriser notre travail, nous avons essayé d’apporter des explications aux inconvénients majeurs qui bloquent l’exploitation des ciments bélitiques. Nous avons travaillé d’une part avec de la bélite synthétisée par voie chimique, pure ou dopée avec des éléments choisis (phosphore, soufre, bore) et, d’autre part, avec une bélite extraite d’un clinker sulfoalumineux bélitique. Nous nous sommes particulièrement intéressés à la stabilisation du polymorphe haute température β. Cette stabilisation a été étudiée d’un point de vue microstructural et chimique. La phase β est maclée. Les surfaces des grains présentent des défauts (dislocations, joints de macles et joints de grains avec des désorientations) qui sont autant de sites potentiels pour une réaction avec l’eau. Que ce soit la bélite de synthèse ou la bélite extraite d’un clinker, elle réagit rapidement avec l’eau. En revanche, la bélite dans une matrice cimentaire réagit lentement. Nous avons attribué cette caractéristique non pas à la lente hydraulicité de la bélite elle-même mais plutôt à la formation, au cours de l’hydratation du ciment, d’hydrates qui viennent recouvrir les grains de belite et empêcher sa dissolution. Ce travail propose également des solutions pour améliorer l’hydraulicité de la bélite contenue dans une matrice cimentaire. / The global policy for reducing greenhouse gas emissions is largely based on finding new solutions for the cement industry, which contributes significantly to CO2 emissions. Among these solutions, the exploitation of cements rich in dicalcium silicate, Ca2SiO4, or belite, which is its cementitious name, seems interesting since the industrial manufacturing process requires a lower demand for limestone and a lower firing temperature than in the case Portland cements. To date, the obstacles for a massive exploitation of the belite by cement producers are the absence or the slowness of its reactivity with the water, which results in a slow increase in mechanical resistance of the belite rich cements, and the 'dusting', or splitting on cooling due to the β allotropic transformation. The interpretations of these phenomena remain, to date, contradictory because they are often based on the analysis of belite in a clinker, with all its complexity. In this context, we have chosen to undertake a fundamental study on the properties of β-Ca2SiO4. In order to value our work, we have tried to explain the major disadvantages that retard or prevent the exploitation of belite rich cements. On one hand, we worked with chemically synthesized belite, either pure or doped with selected elements (phosphorus, sulfur, boron) and, on the other hand, with a belite extracted from a belite sulfoaluminate clinker. We focused on the stabilization of the high temperature β polymorph. This stabilization has been studied from a microstructural and chemical point of view. The β phase is twinned. The grain surfaces have defects (dislocations, twin joints and grain boundaries with disorientations) which are all potential sites for a reaction with water. Whether belite is synthetic or extracted from a clinker, it reacts quickly with water. In contrast, belite in a cement matrix responds slowly. We have attributed this characteristic not to the slow hydraulicity of the belite itself, but to the formation, during the hydration of the cement, of hydrates which cover the belite grains and prevent their dissolution. This work also proposes solutions to improve the hydraulicity of the belite contained in a cement matrix.

The continued growth of the optoelectronics industry and the emergence of wearable and flexible electronics will continue to place an ever increasing pressure on replacing ITO, the most widely used transparent conducting electrode (TCE). Among the various candidates, graphene shows the highest optical transmittance in addition to promising electrical transport properties. The currently available large-scale synthesis routes of graphene result in polycrystalline samples rife with grain boundaries and other defects which limit its transport properties. Chemical doping of graphene is a viable route towards increasing its conductivity and tuning its work function. However, dopants are typically present at the surface of the graphene sheet, making them highly susceptible to degradation in environmental conditions. Few-layers graphene (FLG) is a more resilient form of graphene exhibiting higher conductivity and performance stability under stretching and bending as contrasted to single-layer graphene. In addition FLG presents the advantage of being amenable bulk doping by intercalation. Herein, we explore non-covalent doping routes of CVD FLG, such as surface doping, intercalation and combination thereof, through in-depth and systematic characterization of the electrical transport properties and energy levels shifts. The intercalation of FLG with Br2 and FeCl3 is demonstrated, showing the highest improvements of the figure of merit of TCEs of any doping scheme, which results from up to a five-fold increase in conductivity while maintaining the transmittance within 3% of that for the pristine value. Importantly the intercalation yields TCEs that are air-stable, due to encapsulation of the intercalant in the bulk of FLG. Surface doping with novel solution-processed metal-organic molecular species (n- and p-type) is demonstrated with an unprecedented range of work function modulation, resulting from electron transfer and the formation of molecular surface dipoles. However, the conductivity increases compared modestly to intercalation as the electron transfer is limited to the uppermost graphene layers. Finally, a novel and universal multi-modal doping strategy is developed, thanks to the unique platform offered by FLG, where surface and intercalation doping are combined to mutually achieve high conductivity with an extended tunability of the work function. This work presents doped-FLG as a prospective and versatile candidate among emerging TCEs, given the need for efficient and stable doping routes capable of controllably tuning its properties to meet the criteria of a broad range of applications.