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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
821

CdTe Back Contact Engineering via Nanomaterials, Chemical Etching, Doping, and Surface Passivation

Bastola, Ebin January 2020 (has links)
No description available.
822

Etude structurale et cartographie du dopage dans des oxydes nanostructurés à base de sillicium. / Structural investigation and dopants mapping in silicon based nanostructured oxides

Demoulin, Rémi 19 November 2019 (has links)
La modification des propriétés optiques et électriques du silicium apportée par la réduction en taille, notamment due aux effets de confinement quantique des porteurs de charges, est aujourd'hui bien connue et a permis le développement de nouveaux systèmes en optoélectronique. Comme dans le cas du silicium massif, le dopage devrait permettre d'optimiser les propriétés du silicium nanostructuré. Cependant, les caractéristiques du dopage dans le silicium nanostructuré sont encore mal comprises et de nombreux questionnements, concernant la localisation des impuretés ainsi que leur état d'activation, restent en suspens. De plus, l'environnement des impuretés semble avoir une influence majeure sur l'ensemble des propriétés. Cette thèse vise à mieux comprendre les caractéristiques structurales du dopage à l'échelle atomique en fonction de la nature de l'impureté, de la matrice hôte et de la technique d'élaboration. Pour cela, nous avons étudié deux types de système en sonde atomique tomographique. Le premier concerne un dopage aux ions de terres rares dans les silicates d'hafnium. Nous avons mis en évidence que la formation de nano-grains de HfO2 cristallisés sous la forme cubique permet un transfert d'énergie efficace vers les ions praséodyme. Le second porte sur les dopages de type n et p de nanocristaux de silicium insérés dans la silice. Nous avons démontré l'introduction des impuretés de type n (As, P) au cœur des nanocristaux, indépendamment de la technique d'élaboration, permettant de réaliser des forts dopages. Un comportement différent a été mis en évidence pour les impuretés de type p, avec l'accumulation de Bore aux interfaces entre les nanocristaux et la matrice. / The change of silicon optical and electrical properties induced by size reduction, due to the quantum confinement of charged carriers, is a well-known effect and allowed to develop new optoelectronic devices. As in bulk silicon, doping should allow to optimize these properties in nanostructured silicon. However, the characteristics of doping of nanostructured silicon still misunderstood and many questions, concerning the location of impurities and their activation state, remain unanswered. Moreover, in these materials, the environment of impurities seems to inuence strongly all of their properties. The purpose of this thesis is to get a better understanding of structural characteristics of doping at the atomic scale in function of the nature of the impurity, the host matrix, and the elaboration technic. In this way, we have investigated two di_erent systems using atom probe tomography. The first concerns a rare earth doping of hafnium silicates. We have evidenced that the clustering of HfO2 nano-grains crystallized in their cubic form induced an efficient energy transfer with praseodymium ions. The second system concern the n and p type doping of silicon nanocrystals embedded in silica. We have demonstrated the important introduction of n type impurities (As, P) in the core of every nanocrystals, independently of the elaboration technic. This introduction of impurities should allow the formation of highly doped silicon nanocrystals. A different behavior has been observed in the case of p type doping, represented by the aggregation of Boron at the interface between the nanocrystals and the silica matrix.
823

Etude du dopage de type p dans des nanostructures de GaN par corrélation entre sonde atomique tomographique et holographie électronique hors axe optique / Investigation of p-type doping in GaN nanostructures by correlation between atom probe tomography and off-axis electron holography

Amichi, Lynda 20 December 2018 (has links)
La thèse porte sur l’étude du dopage de type p, à base de Mg, dans des nanostructures de GaN, dans le but de relier la distribution spatiale du dopant à son activité électrique grâce à la corrélation entre sonde atomique tomographique (APT) et holographie électronique hors axe optique réalisée dans un microscope électronique en transmission (TEM). L'APT est une technique de caractérisation qui repose sur l'évaporation par effet de champ des atomes de surface d'un échantillon, permettant l'analyse en termes de morphologie et de composition, en trois dimensions et à l'échelle atomique. L'holographie électronique hors axe optique fournit des cartographies du potentiel électrostatique introduit par les dopants actifs électriquement. Dans un premier temps, les conditions expérimentales ont dues être optimisées pour chacune des techniques, incluant la préparation des échantillons, les conditions de mesure ainsi que le traitement des données, de façon à obtenir des données fiables et les plus quantitatives possibles. Une analyse soigneuse et détaillée des artefacts et des erreurs qu’ils introduisent est rapportée. Il a en particulier été montré que réaliser les expériences d’holographie in-situ à haute température (400 °C) grâce à un porte-objet chauffant permettait d’augmenter très significativement le signal lié au dopage et ainsi accroitre la sensibilité de la mesure. Dans un deuxième temps, ces deux méthodes d’analyse ont été corrélées pour étudier d’une part l’influence de la température de croissance en MOCVD, d’autre part celle de la concentration nominale en dopants dans des nanostructures dédiées GaN. Nous avons pu confirmer grâce à l’APT l’existence de précipités riches en Mg dès que la concentration nominale excède environ 3E19 cm-3, dont la densité augmente avec la concentration nominale et diminue avec la température de croissance. Leur présence diminue la concentration en dopants potentiellement actifs situés dans la matrice en dehors de ces précipités. Néanmoins, les résultats obtenus par holographie, appuyés par des simulations numériques, indiquent que ces précipités n’auraient pas un rôle prépondérant dans la variation du potentiel électrostatique en fonction de la concentration nominale en dopants même pour des concentrations en Mg qui s’élèvent à 2E20cm-3. / The aim of the thesis is to develop a methodology for the investigation of Mg which acts as p-type doping in GaN. We relate the spatial distribution of the dopants with their electrical activity which is achieved by coupling two complementary approaches, Atom Probe Tomography (APT) and Off-axis electron holography. These measurements have also been combined with high-resolution electron microscopy (HR-(S)TEM) for the structural characterization. APT is a unique characterization technique, based on the field effect evaporation of individual atoms of a needle shape sample, allowing the analysis of nano-devices both in terms of morphology and composition in three dimensions at the atomic scale. Off-axis electron holography uses an electron biprism to form an interference pattern from which the electrostatic potential arising from the active dopants can be determined. In this work the experimental procedure has been optimized for both techniques including specimen preparation, the microscope parameters and data treatment to recover accurate information about the position and activity of the dopants. For the holography measurements, a careful analysis of the artifacts that are present in these specimen has been performed to understand the effects of specimen preparation and charging under electron irradiation. We have performed these experiments at high temperature in-situ in the TEM (400 °C) as this increases the ionized dopant concentrations and reduces the artifacts that are present in our measurements. Having developed the methodology, these two techniques are then used to study the effect of temperature and dopant concentrations on the growth of Mg-doped GaN by MOCVD. We have been able to show by APT the existence of precipitates of Mg which are present from a concentration of 3E19 cm-3 whose size and density depends on the growth temperature and the total nominal dopant concentration. Their presence reduces the concentration of dopants that are potentially active in the specimens. However, the measurements of active dopants by holography combined with simulations suggest that the presence of these precipitates do not dominate the electrical properties of the material and that even in very highly doped specimens up to 2E20cm-3 the total active dopant concentrations are still higher than expected from previously published studies. The correlation between these techniques will provide valuable information to improve the Mg activation GaN which is currently a big issue for device manufacture.
824

Doping Efficiency and Limits in Wurtzite (Mg,Zn)O Alloys

Mavlonov, Abdurashid 11 July 2016 (has links)
In this thesis, the structural, optical, and electrical properties of wurtzite MgxZn1-xO:Al and MgxZn1-xO:Ga thin films have been investigated in dependence on Mg and dopant concentration. Among the transparent conductive oxides (TCOs), ZnO based compounds have gained renewed interest as a transparent electrode for large scale applications such as defroster windows, at panel displays, touch screens, and thin film solar cells due to low material and processing cost, non-toxicity, and suitable physical properties. In general, these applications require transparent electrodes with lowest possible resistivity of rho < 10^-3 Ohmcm and lower [1]. Recently, it has been reported that Ga and Al doped ZnO thin films can be deposited with respective resistivity of 5x10^-5 Ohmcm [2] and 3 x10^-5 Ohmcm [3] which are similar to the data obtained for other practical TCOs, i.e. the resistivity of about 4x 10^-5 Ohmcm for Sn doped In2O3 (ITO) thin films [4]. Moreover, the bandgap of ZnO can be increased by alloying with Mg offering band alignment between transparent electrode and active (or buffer) layer of the device, e.g. Cu(In,Ga)Se2 solar cells [5]. The tunable bandgap of these transparent electrodes can further increase the efficiency of the devices by avoiding energy losses in the interface region of the layers. From this point of view, this work has been aimed to investigate the doping efficiency and limits in transparent conductive (Mg,Zn)O alloys. For this purpose, the samples investigated in this work have been grown by pulsed-laser deposition (PLD) using a novel, continuous composition spread method (CCS). In general, this method allows to grow thin films with lateral composition gradient(s) [6, 7]. All MgxZn1-xO:Al and MgxZn1-xO:Ga thin films have been deposited on 2-inch in diameter glass, c- or r-plane sapphire substrates using threefold segmented PLD targets in order to grow thin films with two perpendicular, lateral composition gradients, i.e. the Mg composition is varied in one direction whereas the Al/Ga concentration is varied in a perpendicular direction [7, 8]. In order to investigate the influence of the temperature, samples grown at different substrate temperatures in the range of 25 to 600 C were investigated. The optical and electrical measurements have been carried out on (5x 5)mm^2 samples that were cut from the CCS wafers along the respective composition gradients, i.e. Mg and Al/Ga contents. Subsequently, physical properties of thin films have been analyzed for a large range of Al/Ga content between 0.5 and 7 at.%, which corresponds to doping concentrations between 2x 10^20 and 3x 10^21 cm^-3, for different Mg contents x(Mg) ranging from 0.01 to 0.1. It has been found that practically the limiting the dopant concentrations is about 2 x10^21 cm^-3. Further, the electrical data suggests, that the compensating intrinsic defect is doubly chargeable hinting to the zinc vacancy (V_Zn) as microscopic origin. Increasing the dopant concentration above 2 x10^21 cm^-3 leads to a degradation of electrical and structural properties [8]. Further, the influence of growth and annealing temperatures on structural, electrical and optical properties of the films has been studied. For that purpose, Al and Ga doped (2.5 at.% = 1x10^21 cm^-3) Mg0.05Zn0.95O thin films have been chosen from CCS samples grown at T_g = (25 - 600) C . For both doping series, the samples grown at higher temperatures exhibit better crystalline quality compared to the samples grown at lower growth temperatures. As a result, samples grown at higher temperatures reveal higher Hall mobility. For the Al-doping series, the highest free charge carrier density of n = 8.2x 10^20 cm^-3 was obtained for an Mg0.05Zn0.95O:Al thin film grown at 200 C, with corresponding Hall mobility of mu = 13.3 cm^2/Vs, a resistivity of rho = 5.7x10^-4 Ohmcm, and optical bandgap of E_g = 3.8 eV. Interestingly, the free charge carrier density of n = (5 - 8) x 10^20 cm^-3 for samples grown with T_g > 300 C is clearly higher than the value of n = 1.25 x 10^20 cm^-3 that was obtained for the high temperature grown sample, i.e. at T_g = 600 C. Furthermore, for all T_g, Al-doped films have a higher doping efficiency than the Ga-doped counterparts. In order to look deeper into the microscopic origin of this behavior, the samples were post-annealed in vacuum at 400 C. Experimental results showed that the free charge carrier density of Al-doped samples first decreased and saturated afterward with increasing annealing time. On the other hand, the free charge carrier density of the Ga-doped samples first slightly increased and saturated with increasing annealing time. For both doping series, the saturation value of n ~ 1 x 10^20 cm^-3 was very close to the data that has been observed for (i) high temperature grown samples and (ii) the solubility limit of Al in ZnO of 0.3 at.% = 1.2x 10^20 cm^-3, that has been determined by Shirouzu et al. for high temperature grown (T_g > 600 C) Al-doped ZnO [9]. Correspondingly, the optical bandgap also changed, i.e. increased (decreased) for Al- (Ga-) doping series, and approached a constant value of 3.5 0 +- 0.1 eV which is explained by generation of acceptor-like compensating defects, and the solubility limit of the dopants. From XRD data, no secondary phases were found for as-grown and post-annealed films. However, the slight improvement of crystalline quality has been observed on post-annealed samples. Further, it has been shown that the growth and annealing temperatures are important as they strongly affect the metastable state of the solid solution that samples grown at low temperature represent. The low solubility limit of the dopants, i.e. 0.3 at.% for Al in ZnO under equilibrium condition, can be increased by preparing samples by non-equilibrium growth techniques [10]. This is also consistent with experimental results of this work that Al- as well as Ga-doped metastable ZnO and (Mg,Zn)O thin films can be prepared with highest possible doping efficiency for the dopant concentration up to 2.5 at.% when growth or annealing temperatures below 400 C are used.
825

Micro and Nano Raman Investigation of Two-Dimensional Semiconductors towards Device Application

Rahaman, Mahfujur 02 July 2020 (has links)
Recent advances in nanoscale characterization and device fabrications have opened up opportunities for layered semiconductors in nanoelectronics and optoelectronics. Due to strong confinement in monolayer thickness, physical properties of this materials are greatly influenced by parameters such as strain, defects, and doping at the nanoscale. Therefore, understanding the effect of this parameters on layered semiconductors is the prerequisite for any device application. In this doctoral thesis, impact of such parameters on the optical properties of layered semiconductors are studied in nanoscale. MoS2, the most famous transition metal dechalcogenide (TMDC) (n-type semiconductor), and p-type GaSe, a member of metal monochalcogenide (MMC) are investigated in this work. Finally, in outlook, a device made of p-type few layer GaSe and n-type 1L-MoS2 is discussed.
826

Enhancement of n-channel Organic Field-Effect Transistor Performance through Surface Doping and Modification of the Gate Oxide by Aminosilanes

Shin, Nara 22 August 2019 (has links)
In this these, in order to enhance the n-channel organic field-effect transistor (OFET) performance, amino functionalized self-assembled monolayers (A-SAMs) which consist of amino groups, a well-known n-type dopant candidate, were introduced from the top of OFET surfaces and on the gate oxide surfaces. To obtain better understanding for optimization of OFET performances we attempted to elucidate the mechanism of surface doping and surface modification by A-SAMs. Both the surface doping and surface modification of the gate oxide approaches have individual pros and cons. One needs to take into account the surface energy properties of SAMs and the resulting OSC film structure and pick the most suitable method to introduce the SAM material to the OFET (either doping or oxide modification) in order to obtain optimized device performances. Our study strongly suggests that both surface doping and surface modification of the gate oxide with A-SAMs could enhance other semiconductor-based electronic device performances.:Abstract v Chapter 1. Introduction 1 Chapter 2. Theoretical Background 7 2.1. Organic Semiconductors (OSCs) 8 2.1.1. Semiconducting properties of organic molecules 8 2.1.2. Charge Transport Mechanism in OSCs 10 2.2. Organic Field-Effect Transistors (OFETs) 18 2.2.1. Operation Principle 18 2.2.2. Device Geometry of OFETs 20 2.2.3. Contacts (metal/semiconductor junction) in OFETs 21 2.2.4. Dielectric material for OFETs 23 2.2.5. Current-Voltage Characteristics of OFETs 25 2.3. Dominant contributors to OFET Performance 32 2.3.1. Molecular structure and Orientation of OSCs 32 2.3.2. Dielectric/OSC Interface 33 2.3.3. OSC/Contact Interface (Contact resistance) 35 2.3.4. Shallow and deep traps 36 2.4. Strategies to improve OFET performance 37 2.4.1. Introducing dopants to OFETs 37 2.4.2. Modification of Gate Oxide Layer with SAMs 44 Chapter 3. Experimental 51 3.1. Device Fabrication 52 3.1.1. Device type I - Substrate/ODTMS/PTCDI-C8/Au 53 3.1.2. Device type II - Substrate/ODTCS/N2200 (PNDI2OD-2T)/Au 53 3.1.3. Device type III - Substrate/SAMs/PTCDI-C8/Au 54 3.2. Surface doping process 56 3.2.1. Surface dopant – Aminosilanes (A-SAMs) 56 3.2.2. Surface doping method 56 3.3. Characterization 59 3.3.1. Material characterization 59 3.3.2. Surface-wetting characterization - Contact angle measurement 61 3.3.3. Micro-structure characterization - Atomic Force Microscopy (AFM) 62 3.3.4. Surface potential characterization – Kelvin Probe Force Microscopy (KPFM) 63 3.3.5. Molecular Structure Characterization - Grazing Incidence Wide Angle X-ray Scattering (GIWAXS) 64 3.3.6. Electrical Characterization - Current-voltage (I-V) measurement 66 Chapter 4. Result and Discussion 69 4.1. Optimization of OFETs based on PTCDI-C8 and N2200 70 4.1.1. PTCDI-C8 OFETs 70 4.1.2. N2200 OFETs 72 4.1.3. Device measurement condition 75 4.2. Investigation of Surface doping mechanism of Aminosilanes 77 4.2.1. Surface doping effect depending on the dopant processing method 77 4.2.2. Surface doping effect for different types of organic semiconductors 80 4.2.3. Surface doping effect for different types of surface dopants 89 4.2.4. Surface doping effect for different OSC grain sizes 92 4.2.5. Surface doping effect for different OSC film thicknesses 103 4.2.6. Molecular structure of the doped films identified by GIWAXS 106 4.2.7. Stability of the surface doped OFETs 107 4.2.8. Summary 111 4.3. Modification of the gate oxide with various self-assembled monolayers 112 4.3.1. The surface property of SAM-treated substrates 112 4.3.2. The relation between the OSC morphology and the field-effect mobility 115 4.3.3. The origin of the threshold voltage shift 126 4.3.4. Memristive effects in PTCDI-C8 devices on ODTMS 133 4.3.5. Summary 137 4.4. Comparison of the surface doping and the modification of the gate dielectric 138 4.4.1. The reliability factor of OFETs 138 4.4.2. The threshold voltages and field-effect mobility of OFETs 141 4.4.3. Density of Interfacial trap sites and SAM induced mobile carriers 143 4.4.4. Summary 144 Chapter 5. Conclusion 145 Bibliography 148 List of Figures 158 List of Tables 166 List of Equations 167 Acknowledgment 168 Erklärung zur Eröffnung des Promotionsverfahrens 169
827

Charge transport limits and electrical dopant activation in transparent conductive (Al,Ga):ZnO and Nb:TiO2 thin films prepared by reactive magnetron sputtering: Charge transport limits and electrical dopant activation in transparent conductive (Al,Ga):ZnO and Nb:TiO2 thin films prepared by reactive magnetron sputtering

Cornelius, Steffen 16 June 2014 (has links)
Transparent conductive oxides (TCOs) are key functional materials in existing and future electro-optical devices in the fields of energy efficiency, energy generation and information technology. The main application of TCOs is as thin films transparent electrodes where a combination of maximum electrical conductivity and transmittance in the visible to nearinfrared spectral range is required. However, due to the interdependence of the optical properties and the free electron density and mobility, respectively, these requirements cannot be achieved simultaneously in degenerately doped wide band-gap oxide semiconductors. Therefore, a detailed understanding of the mechanisms governing the generation of free charge carriers by extrinsic doping and the charge transport in these materials is essential for further development of high performance TCOs and corresponding deposition methods. The present work is aimed at a comprehensive investigation of the electrical, optical and structural properties as well as the elemental composition of (Al,Ga) doped ZnO and Nb doped TiO2 thin films prepared by pulsed DC reactive magnetron sputtering. The evolution of the film properties is studied in dependence of various deposition parameters through a combination of characterization techniques including Hall-effect, spectroscopic ellipsometry, spectral photometry, X-ray diffraction, X-ray near edge absorption, Rutherford backscattering spectrometry and particle induced X-ray emission. This approach resulted in the development of an alternative process control method based on the material specific current-voltage pressure characteristics of the reactive magnetron discharge which allows to precisely control the oxygen deficiency of the sputter deposited films. Based on the experimental data, models have been established that describe the room temperature charge transport properties and the dielectric function of the obtained ZnO and TiO2 based transparent conductors. On the one hand, these findings allow the prediction of material specific electron mobility limits by identifying the dominating charge carrier scattering mechanisms. On the other hand, new insight is gained into the origin of the observed transition from highly conductive to electrically insulating ZnO layers upon the incorporation of increasing concentrations of Al at elevated growth temperatures. Moreover, the Al and Ga dopant activation in ZnO have been quantified systematically for a wide range of Al concentrations and deposition conditions. A direct comparison of the Ga and Al doping efficiency demonstrates that Ga is a more efficient electron donor in ZnO. Further, it has been shown that high free electron mobilities in polycrystalline and epitaxial Nb:TiO2 layers can be achieved by reactive magnetron sputtering of TiNb alloy targets. The suppression of rutile phase formation and the control of the Nb dopant activation by fine tuning the oxygen deficiency have been identified as crucial for the growth of high quality TiO2 based TCO layers.
828

Advanced doping techniques and dehydrogenation properties of transition metal-doped LiAlH 4 for fuel cell systems

Fu, Jie 06 January 2015 (has links)
Hydrogen is an efficient, carbon-free and safe energy carrier. However, its compact and weight-efficient storage is an ongoing subject for research and development. Among the intensively investigated hydrogen storage materials, lithium aluminum hydride (LiAlH4) is an attractive candidate because of its high theoretical hydrogen density (volumetric: 96.7g H2/l material; gravimetric: 10.6 wt.%-H2) in combination with rather low decomposition temperatures (onset temperature <100°C after doping). Although the reversible dehydrogenation of LiAlH4 must be carried out with the help of organic solvent, LiAlH4 can serve as single-use hydrogen storage material for various special applications, for example, hydrogen fuel cell systems. This thesis deals with transition metal (TM)-doped LiAlH4 aiming at tailored dehydrogenation properties. The crystal structure and morphology of TM-doped LiAlH4 is characterized by XRD and SEM respectively. The positive effects of four dopants (NiCl2, TiCl3, ZrCl4 and TiCl4) on promoting the dehydrogenation kinetics of LiAlH4 are systematically studied by thermal analysis. Based on the state of each TM chloride (solid or liquid), three low-energy-input doping methods (1. ball-milling at low rotation speed; 2. manual grinding or magnetic stirring; 3. magnetic stirring in ethyl ether) are compared in order to prepare LiAlH4 with the maximum amount of hydrogen release in combination with fast dehydrogenation kinetics. The dehydrogenation properties of the TM-doped LiAlH4 powders are measured under isothermal conditions at 80°C at a H2 pressure of 1 bar, which is within the operating temperature range of proton exchange membrane (PEM) fuel cells, aiming at applications where the exhaust heat of the fuel cell is used to trigger the dehydrogenation of the hydrogen storage material. Furthermore, the mid-term dehydrogenation behavior of TM-doped LiAlH4 was monitored up to a few months in order to test its mid-term storability. In addition, the pelletization of TM-doped LiAlH4 is investigated aiming at a higher volumetric hydrogen storage capacity. The effects of compaction pressure, temperature and the H2 back-pressure on the dehydrogenation properties of TM-doped LiAlH4 pellets are systematically studied. Moreover, the volume change through dehydrogenation and the short-term storage of the TM-doped LiAlH4 pellets are discussed in view of practical applications for PEM fuel cell systems. / Wasserstoff ist ein effizienter, kohlenstofffreier und sicherer Energieträger. Jedoch die kompakte und gewichtseffiziente Speicherung ist ein permanentes Forschungs- und Entwicklungsthema. Unter den intensiv untersuchten Materialien für die Wasserstoffspeicherung ist aufgrund der hohen theoretischen Speicherdichte (volumetrisch: 96,7 g H2/L, gravimetrisch: 10.6 Gew.%-H2) in Kombination mit sehr niedrigen Zersetzungstemperaturen (Anfangstemperatur < 100°C nach Dotierung) Lithium Aluminiumhydrid (LiAlH4) ein vielversprechender Kandidat. Obwohl die reversible Dehydrierung von LiAlH4 mit Hilfe von organischen Lösungsmitteln durchgeführt werden muss, kann LiAlH4-Pulver als Einweg-Speichermaterial für verschiedene Anwendungen dienen, beispielsweise für Wasserstoff/Brennstoffzellensysteme. Diese Doktorarbeit beschäftigt sich mit LiAlH4 dotiert mit Übergangsmetall, mit dem Ziel maßgeschneiderte Dehydrierungseigenschaften zu erreichen. Die Kristallstruktur und die Morphologie der mit Übergangsmetallen dotierten LiAlH4-Pulver wurden mit Röntgenbeugung (XRD) und Rasterelektronenmikroskopie (REM) charakterisiert. Weiterhin wurde der positive Effekt der Dotanden auf die reaktionsfördernde Dehydrierung von LiAlH4 systematisch mit Hilfe thermoanalytischer Methoden untersucht. Für jedes Übergangsmetall, welches in Form von Übergangsmetallchloriden vorlag, wurden drei Dotierungsmethoden mit niedrigem Energieeintrag (Kugelmahlen mit geringer Rotations-geschwindigkeit, manuelles Schleifen/Magnetrühren, Magnetrühren mit Ethylether) verglichen, um LiAlH4-Pulver mit einer maximalen Wasserstofffreisetzungsmenge in Kombination mit einer schnellen Dehydrierungskinetik zu erzielen. Die Dehydrierung des dotierten LiAlH4-Pulvers wurde unter isothermen Bedingungen bei 80°C und einem H2-Druck von 1 bar gemessen, was im Bereich der Betriebstemperatur von PEM-Brennstoffzellen (Proton Exchange Membran) liegt. Dadurch sollen Anwendungen anvisiert werden, bei denen die entstehende Abwärme der Brennstoffzelle genutzt wird, um die Dehydrierung des Wasserstoffspeichermaterials auszulösen. Zudem wurde das Dehydrierungsverhalten des dotierten LiAlH4 bis zu einigen Monaten kontrolliert, um die mittelfristige Haltbarkeit zu testen. Weiterhin wurde die Pelletierung des mit Übergangsmetallen dotierten LiAlH4 mit dem Ziel untersucht, eine hohe volumetrische Speicherkapazität zu erreichen. Der Einfluss des Pressdrucks, der Dehydrierungstemperatur und des H2-Gegendrucks auf die Dehydrierungseigenschaften der mit Übergangsmetallen dotierten LiAlH4-Presslinge wurde systematisch analysiert. Außerdem wird die Volumenveränderung durch die Dehydrierung und die Kurzzeitspeicherung der mit Übergangsmetallen dotierten LiAlH4-Presslinge im Hinblick auf praktische Anwendungen unter Nutzung der Brennstoffzelle diskutiert.
829

Factors influencing dietary supplements use help identifying athletes with risky behaviors

Marion, Samuel 05 1900 (has links)
La consommation de suppléments alimentaires (DS) est répandue chez les athlètes et peut entrainer des conséquences telles que de faciliter la transition vers la consommation de substances prohibées ou échouer un contrôle anti-dopage causé par la consommation de DS contaminés. Une recherche utilisant des méthodes mixtes a été mené pour étudier le processus décisionnel sous-tendant la consommation de DS chez les athlètes. Dans la partie qualitative de l’étude, des athlètes universitaires (n=10) ont participé à des entrevues semi-structurées. L’analyse thématique des entrevues indique que les athlètes consommant des DS pour augmenter leurs performances sans obtenir les bénéfices escomptés seraient plus à risque de consommer des substances prohibées. Selon les données quantitatives (n=162), la prévalence de consommation des DS est élevée chez les athlètes et les hommes consommeraient plus de DS différents. La majorité des participants considéraient les nutritionnistes comme la source d’information la plus importante, mais peu d’entre eux (4%) ont utilisé leurs services. La participation d’athlètes élites à des entrevues semi-structurées (n=7) et à un questionnaire (n=36) dans le cadre d’une recherche préliminaire a permis une comparaison entre ces deux populations. Minimiser les risques susmentionnés pourrait être fait en ciblant les athlètes les plus vulnérables selon les critères suivants : 1) être un homme; 2) ne pas être inscrit dans un programme académique dans le domaine de la santé; 3) n’avoir jamais suivi de formation sur les DS; 4) consommer des DS pour améliorer ses performances sans obtenir les bénéfices escomptés ou 5) consommer plus de 3 DS différents. / Dietary supplements (DS) consumption is widespread among athletes. Despite evidence-based benefits, DS have proven to represent a risk for transitioning toward prohibited substances and even failing an anti-doping test due to contamination. A sequential mixed-method research design was used to explore the factors affecting athletes’ decision-making process underlying DS use. Varsity athletes (n=10) participated in semi-structured interviews that were thematically analyzed. In addition, a survey was conducted (n=162). Results indicated that athletes who consume DS to improve performance and experiencing little to no benefits could be more prone to transition toward prohibited substances. A high prevalence of DS use in varsity athletes was also observed (>90%), with males consuming more DS products. Nutritionists were ranked as the most importance source of information regarding DS; however, only 4% of athletes consulted one. A follow-up preliminary study conducted on elite athletes (semi-structured interviews: n=7; questionnaire: n=36) was also performed to compare those athlete populations. Minimizing DS consumption risks could be achieved by targeting the most vulnerable segment of the athletics population based on the following criteria: 1) being a male; 2) not being enrolled in a health program; 3) not having followed a DS workshop; 4) consuming DS to improve performance without experiencing significant improvements; or 5) consuming more than three different DS.
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Quantitative dopant profiling in semiconductors: A new approach to Kelvin probe force microscopy

Baumgart, Christine January 2012 (has links)
Failure analysis and optimization of semiconducting devices request knowledge of their electrical properties. To meet the demands of today’s semiconductor industry, an electrical nanometrology technique is required which provides quantitative information about the doping profile and which enables scans with a lateral resolution in the sub-10 nm range. In the presented work it is shown that Kelvin probe force microscopy (KPFM) is a very promising electrical nanometrology technique to face this challenge. The technical and physical aspects of KPFM measurements on semiconductors required for the correct interpretation of the detected KPFM bias are discussed. A new KPFM model is developed which enables the quantitative correlation between the probed KPFM bias and the dopant concentration in the investigated semiconducting sample. Quantitative dopant profiling by means of the new KPFM model is demonstrated by the example of differently structured, n- and p-type doped silicon. Additionally, the transport of charge carriers during KPFM measurements, in particular in the presence of intrinsic electric fields due to vertical and horizontal pn junctions as well as due to surface space charge regions, is discussed. Detailed investigations show that transport of charge carriers in the semiconducting sample is a crucial aspect and has to be taken into account when aiming for a quantitative evaluation of the probed KPFM bias.

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