Progress in chemomechanical functionalization was made by investigating the binding of molecules and surface coverage on the silicon surface, demonstrating functionalization of silicon with gases by chemomechanical means, analyzing atomic force microscopy probe tip wear in atomic force microscopy (AFM) chemomechanical nanografting, combining chemomechanical functionalization and nanografting to pattern silicon with an atomic force microscope, and extending chemomechanical nanografting to silicon dioxide. Molecular mechanics of alkenes and alkynes bound to Si(001)-2x1 as a model of chemomechanically functionalized surfaces indicated that complete coverage is energetically favorable and becomes more favorable for longer chain species. Scribing a silicon surface in the presence of ethylene and acetylene demonstrated chemomechanical functionalization with gaseous reagents, which simplifies sample cleanup and adds a range of reagents to those possible for chemomechanical functionalization. Thermal desorption spectroscopy was performed on chemomechanically functionalized samples and demonstrated the similarity in binding of molecules to the scribed silicon surface and to the common Si(001)-2x1 and Si(111)-7x7 surfaces. The wearing of atomic force microscope probe tips during chemomechanical functionalization was investigated by correlating change over time and force with widths of created lines to illustrate the detrimental effect of tip wear on mechanically-driven nanopatterning methods. In order to have a starting surface more stable than hydrogen-terminated silicon, silicon reacted with 1-octene was used as a starting surface for AFM chemomechanical functionalization, producing chemomechanical nanografting. Chemomechanical nanografting was then demonstrated on silicon dioxide using silane molecules; the initial passivating layer reduced the tip friction on the surface to allow only partial nanografting of the silane molecules. These studies broadened the scope and understanding of chemomechanical functionalization and nanografting.

Wafer bonding is important in microelectromechanical systems (MEMS) manufacturing, enabling wafer-level encapsulation and packaging. In this project, different pre-treatments of the polycrystalline silicon surface for eutectic gold-silicon (AuSi) bonding were studied with respect to the resulting bond strength. Native oxides or other surface layers can decrease the interaction between Au and Si, leading to weaker bonds. Different etching methods were investigated to remove native oxide. Spectroscopic ellipsometry (SE), water contact angle measurements and Fourier transform infrared spectroscopy (FTIR) were used to analyze the surfaces. SE measurements showed that the oxide layer grew 5 Å the first 4 hours after HF etch, rinse and dry, but then grew less than this during the following 6 weeks. The measured oxide growth was similar for wafers with other pre-treatments. Through contact angle measurements, it was demonstrated that the different etching methods resulted in different outermost surface layers. None of the contact angles were changed much over several weeks, indicating subsequent oxide growth occurred below a stable outermost layer. For wafer bonding, wafers with bond frame structures were used. After wafer bonding, the bond frames were analyzed with infrared (IR) microscopy and the bonds were shear tested for bond strength. The shorter the exposure time to ambient air atmosphere before bond, the stronger the bond in general. Furthermore, the wafers stored in nitrogen atmosphere exhibited higher bond strengths than the wafers stored in air for the same amount of time, confirming that the growing oxide was the reason for the decreased bond quality during wafer storage. HF (wet/vapor) etched wafers in general had slightly stronger bonds than the other wafers and the wafers etched with HF vapor had the highest average bond strength of all. The IR images showed that white areas in the bond frames were related to decreased bond strength, and that wafers that had longer storage time on average had more white in the bond frames. As a conclusion, to achieve as strong bonds as possible, the waiting time between wafer pre-treatments and bonding should be minimized, and in the waiting time it is beneficial to store the wafers in nitrogen atmosphere. In this study most wafers stored 2 weeks in nitrogen had good bond quality and even wafers stored 3 days in air had acceptable bond strengths. However, using HF to etch away the oxide before bond is preferable compared to the other etching methods, not only to have larger average bond strength, but also to have less bond strength decrease during waiting time before bond. / I tillverkning av mikroelektromekaniska system (MEMS) är skivbondning viktigt för inkapsling och förpackning av mikrosystem på skivnivå. I detta projekt studerades olika förbehandlingar av polykristallina kiselytan, inför eutektisk AuSi-bondning, med avseende på resulterande bondstyrka. Nativoxid eller andra ytskikt kan minska interaktionen mellan guld (Au) och kisel (Si), vilket leder till svagare bond. Flera olika etsmetoder undersöktes för att ta bort nativoxid. Spektroskopisk ellipsometri (SE), mätningar av vattenkontaktvinkel och Fouriertransform infraröd spektroskopi (FTIR), användes för att analysera ytorna. Resultaten från SE-mätningarna visade att oxiden växte 5 Å under de 4 första timmarna efter HF-ets, skölj och tork, men växte sedan mindre än detta under de följande 6 veckorna. Den uppmätta oxidtillväxten var liknande för skivorna med andra förbehandlingar. Kontaktvinklarna var olika för olika förbehandlingsmetoder, vilket visar att de hade olika yttersta ytskikt. Ingen av kontaktvinklarna ändrades mycket under flera veckor, vilket indikerar att den följande oxidtillväxten skedde under ett stabilt yttersta lager. För skivbondning andvändes skivor med bondramar längs chip-kanterna. Dessa bondramar var gjorda av polykristallint Si respektive Au på skivorna som skulle bondas. Efter bondning analyserades bondramarna med infraröd (IR) mikroskopi och skjuvtester gjordes för att bestämma bondstyrkan. Ju kortare tid skivorna exponerades till omgivande luft, desto starkare bond i allmänhet. Dessutom uppvisade skivorna som lagrats i kväveatmosfär högre bondstyrkor än de skivor som lagrats i luft, vilket bekräftar att den växande oxiden var orsaken till den minskade bondkvaliteten under skivlagring. HF-etsade skivor (HF- dipp och HF-ånga) hade något starkare bond än de andra skivorna och de skivor som etsats med HF-ånga hade allra högst genomsnittlig bondstyrka. IR-bilderna visade att vita områden i bondramarna var relaterat till minskad bondstyrka och att skivor som hade längre lagringstid i genomsnitt hade mer vitt i bondramarna. Slutsatsen är att för att uppnå så hög bondstyrka som möjligt ska tiden mellan förbehandlingar och bond minmeras, och under väntetiden är det till fördel att skivorna förvaras i kväveatmosfär. I den här studien hade skivor som förvarats 2 veckor i kväve bra bondkvalitet och även skivor som stått 3 dagar i luft hade godtagbara bondstyrkor. Att använda HF för att etsa bort oxid är dock bättre än att använda någon av de andra etsmetoderna, inte bara för att få högre genomsnittliga bondstyrkor, utan också för att få mindre minskning av bondstyrkan under väntetiden inför bondning.

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Solar absorber coatings are one of the key components in concentrated solar power (CSP) plants. Currently operating at temperatures up to 565°C and suffering from emissive losses, their energy conversion efficiency could be improved by applying high-temperature stable materials with solar selective properties, i.e. high absorptivity and low emissivity. In this work, the transparent conductive oxide (TCO) SnO2:Ta is developed as a solar selective coating (SSC) for CSP absorbers. Starting with simulations covering basic requirements for SSCs, the deposition process of SnO2:Ta is optimized and extensive optical characterization and modelling are performed. It is shown that upon covering with a SiO2 antireflective layer, a calculated absorptivity of 95% and an emissivity of 30% are achieved for the model configuration of SnO2:Ta on top of a perfect black body (BB). High-temperature stability of the developed TCO up to 800 °C is shown in situ by spectroscopic ellipsometry and Rutherford backscattering spectrometry. The universality of the concept is then demonstrated by transforming silicon and glassy carbon from non-selective into solar selective absorbers by depositing the TCO on top of them. Finally, the energy conversion efficiencies ηCSP of SnO2:Ta on top of a BB and an ideal non-selective BB absorber are compared as a function of solar concentration factor C and absorber temperature TH.

Ultra-thin solar cells that incorporate earth-abundant and non-toxic materials are promising candidates in the endeavor toward sustainable energy harvesting. Methods to counteract the inevitable low absorption of thinner semiconductor layers are of high interest and have raised considerable attention in the research society. In an attempt to increase the absorption of these types of assemblies, optical coupling effects between the localized surface plasmon resonances (LSPR) of disordered Au nanostructures and a Fabry-Pérot cavity were studied using a previously established absorber/spacer/reflector stack. The disordered Au array was fabricated by evaporating a thin Au film on a substrate with a 55 nm SiO2 dielectric spacer and a 100 nm Al reflecting film, followed by thermal annealing. Nominal Au film thicknesses in the range of 5-25 Å and annealing temperatures of 200-500 oC were investigated. In situ spectroscopic ellipsometry measurements during the subsequent atomic layer deposition (ALD) of tin monosulfide (SnS) allowed analysis of how the optical properties of the SnS/Au absorber layer changed as a function of the growing SnS layer thickness. By employing the Transfer Matrix Method with the estimated optical properties from the in situ analysis, the absorptance of the absorber/spacer/reflector stacks was simulated as a function of the spacer thickness, revealing any signs of the characteristic anti-crossing behavior. It was discovered that a nominal Au film thickness of 25 Å, annealed at 450 oC, and coated with a SnS film of ∼13 nm primed toward the π-phase, resulted in strong optical coupling between the cavity mode and the LSPR. The energy difference at the avoided crossing in the specular reflectance measurement gave an estimated Rabi-splitting energy of 537 meV. This corresponded to about 40% of the original LSPR energy, placing itself within the ultra-strong coupling regime. To evaluate the relevance of the thin-layered structure in photovoltaic applications, more advanced computational methods are required to estimate the useful absorption that occurs in the SnS layer. Nevertheless, these results elucidate the realization of strong optical coupling effects between disordered Au nanostructures and a Fabry-Pérot cavity, and further the possibility of using scalable fabrication methods for this type of ultra-thin absorber/spacer/reflector stack.

Monolayers of the cationic surfactant hexadecyltrimethylammonium halide (CTAX, where X = F¯, Cl¯, Br¯, and I¯) have been studied at the air-water and oilwater interfaces. At the air-water interface, the effects of the halide counterion and the addition of counterion were investigated. Sum-frequency spectroscopy (SFS), ellipsometry, and surface tensiometry indicated that the counterion changed the efficiency and effectiveness of the surfactant, both decreasing in the order of Br¯> Cl¯>F¯. The addition of salt in the form of 0.1 M KX was found to reduce the cmc but had little effect on the limiting area per molecule attained at the cmc, which increased from 44 Ų for CTAB to 65 Ų for CTAC and ca. 94 Ų for CTAF. Neither SFS nor ellipsometry provided any firm evidence for specific effects of the halide ions on the structure of the surfactant monolayers. For CTAB monolayers in the absence of excess electrolyte, the effect of area per molecule on the sum-frequency (SF) spectra was studied. Mixed monolayers of CTAB and tetradecane at the air-water interface exhibit a first-order phase transition from a conformationally disordered to a conformationally ordered state as the temperature is lowered. The phase transition occurs ca. 11 °C above the bulk melting point of tetradecane. A new experimental arrangement is described for acquiring SF spectra from surfactants at the oil-water interface. The key features of this approach are the stabilisation of a thin oil film between a sapphire prism and an aqueous phase, and the use of total internal reflection to enhance the total signal and discriminate against signals from other interfaces in the system. With this new methodology, the first SF vibrational spectra of surfactant monolayers at an alkane-water interface were obtained. Surface tensiometry was used to characterise the monolayers further. The structure of CTAB monolayers at the hexadecane-water interface was determined by SFS and compared with monolayers of CTAB at the air-water interface. At low concentrations, CTAB/hexadecane showed the expected features in the C-H stretching region, characteristic of a conformationally disordered monolayer. As the bulk concentration approached the critical micelle concentration, the spectra changed to one characteristic of a more ordered, upright conformation. Ellipsometric measurements supported this conclusion. This qualitative structural change is not observed in analogous monolayers at the air-water interface or CCl₄-water interface, or in surfactant solutions in contact with a hydrophobic solid surface.

This thesis deals with the analysis of nano-structured layers deposited by high-frequency magnetron sputtering on the monocrystalline silicon surface. The content of the work focuses on the magnetron sputtering application as an alternative method for passivation and antireflection layers deposition of silicon solar cells. The procedure of pre-deposite silicon surface cleaning by plasma etching in the Ar/H2 gas mixture atmosphere is suggested. In the next step the silicon nitride and aluminum nitride layers with hydrogen content in Ar/N2/H2 gas mixture by magnetron sputtering are deposited. One part of the thesis describes an experimental pseudo-carbide films deposition from a silicon target in the atmosphere of acetylene (C2H2). An emphasis is placed on the research of sputtered layers properties and on the conditions on the silicon-layer interface with the help of the standard as well as special measurement methods. Sputtered layers structure is analyzed by modern X-ray spectroscopy (XPS) and by Fourier infrared spectroscopy (FTIR). Optical ellipsometry and spectrophotometry is used for the diagnostic of the layers optical properties depending upon the wavelength of incident light. A special method of determining the surface lay-out of the charge´s carrier life in the volume and on the surface of silicon is employed to investigate the passivating effects of the sputtered layers.

Dans un monde de plus en plus pollué par l'activité industrielle, la détection des espèces gazeuses nocives dans l'atmosphère est d'une importance essentielle. Le marché des capteurs de gaz est déjà bien développé, avec la présence de diverses technologies et principes de détection, chacune présentant des avantages et des inconvénients intrinsèques. Dans le cadre de cette thèse, un alliage entre deux ou plusieurs technologies de détection typiquement utilisées de façon autonome a été visée, afin d'améliorer les performances globales des systèmes capteurs ainsi formées. A ce fin, nous avons conçu et étudié des dispositifs capteurs basées sur la transduction optique, couplée à un matériau sensible au gaz cible à détecter. Plus précisément, nous avons intégré pour la première fois un matériau catalyseur pouvant accélérer le taux d'oxydation des espèces chimiques (tel le monoxyde de carbone ou l'hydrogène) avec une architecture optique capable d'absorber la chaleur cédée lors de cette oxydation. L'augmentation de température occasionnée est traduite en une variation d'intensité lumineuse constituante le signal de sortie du capteur. Les travaux effectués sur les mesures de la dispersion thermique et chromatique de l'indice de réfraction des matériaux constituant le transducteur optique par des techniques d'optique guidé, ellipsométrie et des techniques photométriques sont présentés. Le sondage par moyen optique des propriétés électriques des matériaux semiconducteurs a également été étudié, y compris les variations de ces propriétés en présence des gaz oxydants, réducteurs et combustibles. / In a world suffering from increasing air pollution due to spiraling industrial activity, the detection of toxic gasses in the atmosphere is of paramount importance. The gas detector market is already well developed, and features a wide variety of detection technologies and techniques, each presenting its own set of intrinsic advantages and drawbacks. In this thesis, a combination of two or more technologies typically used independently has been studied in order to improve the global performances of gas detection systems. To this length, we have conceived and studied detector architectures based upon optical transduction systems, coupled with a material presenting a specific sensitivity to the target gas. More precisely, we have for the first time integrated a catalyst designed to accelerate the oxidation rate of chemical species (such as carbon monoxide or hydrogen) with an optical component capable of absorbing the heat generated by the oxidation reaction. The associated increase in temperature is translated to a variation of the optical intensity comprising the exit signal of the detector. The work carried out measuring the chromatic and temperature dispersion of the refractive index of the materials comprising the optical transduction component by guided mode techniques, ellipsometry and photometric techniques is presented. The optical probing of the electrical properties of semiconductor materials has also been studied, including the variations of these properties following interactions with oxidizing, reducing, or combustible gasses.