Electric breakdown in power transformers is preceded by pre-breakdown events such as streamers. The understanding of these phenomena is important in order to optimize liquid insulation systems. Earlier works have derived a model that describes streamers in transformer oil and utilized a finite element method to produce numerical solutions. This research investigates the consequences of changing the numerical method to a finite volume-based solver implemented in OpenFOAM. Using a standardized needle-sphere geometry, a number of oil and voltage combinations were simulated, and the results are for the most part similar to those produced by the previous method. In cases with differing results the change is attributed to the more stable numerical performance of the OpenFOAM solver. A proof of concept for the extension of the simulation from a two-dimensional axial symmetry to three dimensions is also presented. / Elektriska genomslag i högspänningstransformatorer föregås av bildandet av elektriskt ledande kanaler som kallas streamers. En god förståelse av detta fenomen är viktigt vid konstruktionen av oljebaserad elektrisk isolation. Tidigare forskning i ämnet har tagit fram en modell för fortplantningen av streamers. Denna modell har sedan lösts numeriskt av ett beräkningsverktyg baserat på finita elementmetoden. I denna uppsats undersöks konsekvenserna av att byta metod till finita volymsmetoden genom att implementera en lösare i OpenFOAM. En standardiserad nål-sfär-geometri har ställts upp och ett flertal kombinationer av oljor och spänningar har simulerats. De flesta resultaten visar god överensstämmande med tidigare forskning medan resultat som avviker har tillskrivits de goda numeriska egenskaperna hos OpenFOAM-lösaren. En ny typ av simulering har även genomförts där simulationen utökas från en tvådimensionell axisymmetrisk geometri til tre dimensioner.

Today, nanotechnology has added a new dimension to materials technology by creating opportunities to significantly enhance the properties of existing conventional materials. Polymer nanocomposites belong to one such class of materials and even though they show tremendous promise for dielectric/electrical insulation applications (“nanodielectrics” being the buzzword), the understanding related to these systems is very premature. Considering the desired research needs with respect to some of the dielectric properties of polymer nanocomposites, this study attempts to generate an understanding on some of the existing issues through a systematic and detailed experimental investigation coupled with a critical analysis of the data. An epoxy based nanocomposite system is chosen for this study along with four different choices of nano-fillers, viz. TiO2, Al2O3, ZnO and SiO2. The focus of this study is on the properties of nanocomposites at low filler loadings in the range of 0.1 - 5% by weight and the properties under investigation are the permittivity/tan delta behaviors, DC volume resistivity, AC dielectric strength and electrical discharge resistant characteristics. Significant efforts have also been directed towards addressing the interface interaction phenomena in epoxy nanocomposites and their subsequent influence on the dielectric properties of the material. The accurate characterization of the dielectric properties for polymer nanocomposites depends on the dispersion of nanoparticles in the polymer matrix and to achieve a good dispersion of nanoparticles in the epoxy matrix for the present study, a systematic design of experiments (DOE) is carried out involving two different processing methods. Consequently, a laboratory based epoxy nanocomposite processing methodology is proposed in this thesis and this process is found to be successful in dispersing nanoparticles effectively in the epoxy matrix, especially at filler concentrations lower than 5% by weight. Nanocomposite samples for the study are prepared using this method and a rigorous conditioning is performed before the dielectric measurements. The dielectric properties of epoxy nanocomposites obtained in the present study show interesting and intriguing characteristics when compared to those of unfilled epoxy and microcomposite systems and few of the results are unique and advantageous. In an unexpected observation, the addition of nanoparticles to epoxy is found to reduce the value of nanocomposite real permittivity below that of unfilled epoxy over a wide range of frequencies. Similarly, it has been observed that irrespective of the filler type, tan delta values in the case of nanocomposites are either same or lower than the value of unfilled epoxy up to a filler loading of 5% by weight, depending on the frequency and filler concentration. In fact, the nanocomposite real permittivities and tan delta values are also observed to be lower as compared to the corresponding microcomposites of the same constituent materials at the same filler loading. In another significant result, enhancements in the electrical discharge resistant characteristics of epoxy nanocomposites (with SiO2/Al2O3 nanoparticles) are observed when compared to unfilled epoxy, especially at longer durations of discharge exposures. Contrary to these encouragements observed for few of the dielectric properties, the trends of DC volume resistivity and AC dielectric breakdown strength characteristics in epoxy nanocomposites are found to be different. Irrespective of the type of filler in the epoxy matrix, it has been observed that the values of both AC dielectric strengths and DC volume resistivities are lower than that of unfilled epoxy for the filler loadings investigated. The results mentioned above seem to suggest that there has to be an interaction between the nanoparticles and the epoxy chains in the nanocomposite and therefore, glass transition temperature (Tg) measurements are performed to characterize the interaction phenomena, if any. The results of Tg for all the investigated nanocomposites also show interesting trends and they are observed to be lower than that of unfilled epoxy up to certain nanoparticle loadings. This lowering of the Tg in epoxy nanocomposites was not observed in the case of unfilled and microcomposite systems thereby strongly confirming the fact that there exists an interaction between the epoxy chains and nanoparticles in the nanocomposite. Considering the variations obtained for the nanocomposite real permittivity and Tg with respect to filler loading, a dual nanolayer interface model is utilized to explain the interaction dynamics and according to the model, interactions between epoxy chains and nanoparticles lead to the formation of two epoxy nanolayers around the nanoparticle. Analysis shows that the characteristics of the interface region have a strong influence on the dielectric behaviors of the nanocomposites and the suggested interface model seems to fit the characteristics obtained for the different dielectric/electrical insulation properties rather well. Further investigations are performed to understand the nature of interaction between nanoparticles and epoxy chains through FTIR studies and results show that there is probably an occurrence of hydrogen bonding between the epoxide groups of the epoxy resin and the free hydroxyl (OH) groups present on the nanoparticle surfaces. The results obtained for the dielectric properties of epoxy nanocomposites in this study have widened the scope of applications of these functional materials in the electrical sector. The occurrence of lower values of real permittivity for nanocomposites is definitely unique and unexpected and this result has huge potential in electronic component packaging applications. Further, the advantages related to tan delta and electrical discharge resistance for these materials carry lot of significance since, electrical insulating materials with enhanced electrical aging properties can be designed using nanocomposite technology. Although the characteristics of AC dielectric strengths and DC volume resistivities are not found to be strictly advantageous for epoxy nanocomposites at the investigated filler loadings, these properties can be optimized when designing insulation systems for practical applications. In spite of all these advantages, serious and systematic research efforts are still desired before these materials can be successfully utilized in electrical equipment.

L’industrie microélectronique est régie depuis plusieurs années par la loi de miniaturisation. En particulier, en technologie CMOS, les procédés de fabrication de l’oxyde permettant l’isolation électrique entre les transistors nécessitent sans cesse d’être améliorés pour répondre aux défis de cette loi. Ainsi, on est passé du procédé d’isolation par oxydation localisée de silicium (LOCOS) au procédé d’isolation par tranchées (STI). Cependant, ce dernier a montré pour les technologies en développement des limitations liées au remplissage non parfait par la silice de tranchées de moins en moins larges (Voiding) et au ‘‘surpolissage’’ des zones les plus larges (Dishing). Le procédé FIPOS (full isolation by porous oxidation of silicon) a été donc proposé comme solution alternative. Il est basé sur la formation sélective et localisée du silicium poreux qui est transformé ensuite en silice par un recuit oxydant. Cette piste prometteuse a constitué le point de départ de ce travail. Dans ce contexte, la thèse s’est focalisée sur deux axes principaux qui concernaient d’une part la maîtrise du procédé d’anodisation électrochimique pour la formation du silicium poreux et d’autre part l’optimisation du procédé d’oxydation. Dans une première partie de notre travail, l’analyse des caractéristiques courant-tension I-V menée sur le silicium durant son anodisation électrochimique a permis de montrer que la formation du silicium poreux dépend fortement de la concentration en dopants. Cette propriété nous a permis de développer une technique simple d’extraction du profil de dopage dans le silicium de type p par voie électrochimique. On a montré que la résolution en profondeur de cette technique est liée au niveau du dopage et s’approche de celle du SIMS (spectroscopie de masse d'ions secondaires) pour les fortes concentrations avec une valeur estimée à 60 nm/décade. Dans une deuxième partie, nous avons mis en évidence la formation localisée du silicium poreux oxydé. En effet, un choix judicieux du potentiel d’anodisation permet de rendre poreux sélectivement des régions fortement dopées implantées sur un substrat de silicium faiblement dopé. Ces régions sont ensuite transformées en oxyde par un recuit oxydant. Par ailleurs, les conditions optimales des processus d’oxydation et d’anodisation permettant d’obtenir un oxyde final de bonne qualité diélectrique sont analysées. / The microelectronic industry is still ruled up to now by the law of miniaturization or scaling. In particular, in CMOS (complementary metal-oxide semiconductor) technology, the oxide allowing electric isolation between p- and n-MOS transistors has also been scaled down and has then exhibited different technological processes going from LOCOS (local oxidation of silicon) to STI (shallow trench isolation) and arriving to FIPOS (full isolation by porous oxidation of silicon). The latter seems to be the most promising alternative solution that can overcome actual limitations of voiding and dishing encountered in the STI process. The approach, which is based on selective formation of porous silicon and its easy transformation to silicon dioxide, has aroused our motivation to be well studied. In this context, the PhD project has first focused on the understanding of electrochemical porous silicon formation, and then on the study of porous silicon oxidation. In a first part of our work, we emphasize the dependence of porous silicon formation with the silicon doping concentration through the investigation of current-voltage I-V characteristics measured on p- and n-type silicon electrodes during electrochemical anodization. Taking advantage of this dependence, we have developed a very simple electrochemical method allowing an accurate determination of doping profiles in p-type silicon. It has been shown that the depth resolution of the technique is readily linked to the doping level and it approaches that of the secondary ion mass spectroscopy (SIMS) analysis for high doping concentrations with an estimated value of 60 nm/decade. In a second step, we highlight the selective formation of oxidized porous silicon. In fact, with a correct choice of the applied potential during anodization, only highly doped regions implanted on a lightly doped silicon wafer are preferentially turned into porous silicon and subsequently oxidized. Furthermore, we give the optimum conditions for oxidation and anodization processes which result in an insulating oxide of reliable dielectric properties.

L’émergence d’interrupteurs de puissance en SiC permet d’envisager des convertisseurs de puissance capables de fonctionner au sein des environnements sévères tels que la haute tension (> 10 kV ) et la haute température (> 300 °C). Aucune solution de commande spécifique à ces environnements n’existe pour le moment. Le développement de fonctions élémentaires en SiC (comparateur, oscillateur) est une étape préliminaire à la réalisation d’un premier démonstrateur. Plusieurs laboratoires ont développé des fonctions basées sur des transistors bipolaires, MOSFETs ou JFETs. Cependant les recherches ont principalement portées sur la conception de fonctions logiques et non sur l’intégration de drivers de puissance. Le laboratoire AMPERE (INSA de Lyon) et le Centre National de Microélectronique de Barcelone (Espagne) ont conçu un MESFET latéral double grille en SiC. Ce composant élémentaire sera à la base des différentes fonctions intégrées envisagées. L’objectif de ces recherches est la réalisation d’un convertisseur élévateur de tension "boost" monolithique et de sa commande en SiC. La démarche scientifique a consisté à définir dans un premier temps un modèle de simulation SPICE du MESFET SiC à partir de caractérisations électriques statique et dynamique. En se basant sur ce modèle, des circuits analogiques tels que des amplificateurs, oscillateurs, paires différentielles, trigger de Schmitt ont été conçus pour élaborer le circuit de commande (driver). La conception de ces fonctions s’avère complexe puisqu’il n’existe pas de MESFETs de type P et une polarisation négative de -15 V est nécessaire au blocage des MESFETs SiC. Une structure constituée d’un pont redresseur, d’un boost régulé avec sa commande basée sur ces différentes fonctions a été réalisée et simulée sous SPICE. L’ensemble de cette structure a été fabriqué au CNM de Barcelone sur un même substrat SiC semi-isolant. L’intégration des éléments passifs n’a pas été envisagée de façon monolithique (mais pourrait être considérée pour les inductances et capacités dans la mesure où les valeurs des composants intégrés sont compatibles avec les processus de réalisation). Le convertisseur a été dimensionné pour délivrer une de puissance de 2.2 W pour une surface de 0.27 cm2, soit 8.14 W/cm2. Les caractérisations électriques des différents composants latéraux (résistances, diodes, transistors) valident la conception, le dimensionnement et le procédé de fabrication de ces structures élémentaires, mais aussi de la majorité des fonctions analogiques. Les résultats obtenus permettent d’envisager la réalisation d’un driver monolithique de composants Grand Gap. La perspective des travaux porte désormais sur la réalisation complète du démonstrateur et sur l’étude de son comportement en environnement sévère notamment en haute température (> 300 °C). Des analyses des mécanismes de dégradation et de fiabilité des convertisseurs intégrés devront alors être envisagées. / The new SiC power switches is able to consider power converters, which could operate in harsh environments as in High Voltage (> 10kV) and High Temperature (> 300 °C). Currently, they are no specific solutions for controlling these devices in harsh environments. The development of elementary functions in SiC is a preliminary step toward the realization of a first demonstrator for these fields of applications. AMPERE laboratory (France) and the National Center of Microelectronic of Barcelona (Spain) have elaborated an elementary electrical compound, which is a lateral dual gate MESFET in Silicon Carbide (SiC). The purpose of this research is to conceive a monolithic power converter and its driver in SiC. The scientific approach has consisted of defining in a first time a SPICE model of the elementary MESFET from electric characterizations (fitting). Analog functions as : comparator, ring oscillator, Schmitt’s trigger . . . have been designed thanks to this SPICE’s model. A device based on a bridge rectifier, a regulated "boost" and its driver has been established and simulated with the SPICE Simulator. The converter has been sized for supplying 2.2 W for an area of 0.27 cm2. This device has been fabricated at CNM of Barcelona on semi-insulating SiC substrate. The electrical characterizations of the lateral compounds (resistors, diodes, MESFETs) checked the design, the "sizing" and the manufacturing process of these elementary devices and analog functions. The experimental results is able to considerer a monolithic driver in Wide Band Gap. The prospects of this research is now to realize a fully integrated power converter in SiC and study its behavior in harsh environments (especially in high temperature > 300 °C). Analysis of degradation mechanisms and reliability of the power converters would be so considerer in the future.