京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第19687号 / 工博第4142号 / 新制||工||1639(附属図書館) / 32723 / 京都大学大学院工学研究科航空宇宙工学専攻 / (主査)教授 斧 髙一, 教授 稲室 隆二, 教授 青木 一生 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

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This dissertation presents a method for fabricating integrated hollow and solid optical waveguides on planar substrates. These waveguides are antiresonant reflecting optical waveguides (ARROWs), where high-index cladding layers confine light to hollow cores through optical interference. Hollow waveguides that can be filled with liquids or gases are an important new building block for creating highly-integrated optical sensors. The method developed for fabricating these integrated waveguides employs standard processes and materials used in the microelectronics industry, allowing for parallel, low-cost fabrication. Dielectric cladding layers are deposited on a silicon wafer using plasma-enhanced chemical vapor deposition (PECVD). After the lower cladding layers have been deposited, a sacrificial material is deposited and patterned using photolithography to produce the hollow-core shape. After the sacrificial cores are defined, they are coated with additional PECVD dielectric layers to form the sides and tops of the waveguides. Integrated solid-core waveguides can be easily created by etching a ridge into the top dielectric cladding layer. Finally, the ends of the sacrificial cores are exposed and removed with an acid solution, resulting in hollow waveguides. Improved optical performance for integrated ARROW platforms can be achieved by only using a single over-coating for the cladding on the sides and top of the hollow waveguide. Such a structure resulted in 70% improvement in optical throughput for the platforms and increased sensitivity for optical manipulation and fluorescence detection of single particles, including viruses. Reduced loss for the hollow waveguides can be obtained by surrounding the core with a terminal layer of air on the sides and top of the waveguide. Such devices were created by forming the hollow waveguides on top of a pedestal on the silicon substrate. This process produces the ideal geometry for hollow ARROW waveguides, and loss measurements of waveguides with air-filled cores had loss coefficients of 1.54/cm, which is the lowest achieved for air-core ARROWs.

This thesis presents the first use of a novel direct-write, non-line-of-sight, two-photon photoelectrochemical etching technique for etching of single crystal silicon carbide substrates. The use of this technique has resulted in structuring of 3-dimensional structures in high quality single crystal silicon carbide wafers. The 3-dimensional structures demonstrated cannot be formed by any single or combination of traditional silicon carbide machining techniques. This thesis outlines the development of the optical, electrical, and diagnostic components required to achieve two-photon photoelectrochemical etching in silicon carbide. The diagnostic sub-assemblies --a single pixel confocal detector assembly and an in-situ optical microscope assembly-- and their design is also discussed. Several etched structures using the two-photon photoelectrochemical etching technique are presented.

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An environmentally friendly, and contamination free process for etching and cleaning semiconductors is critical to future of the IC industry. Under the right conditions, water has the ability to meet these requirements. Water becomes more reactive as a function of temperature in part because the number of hydronium and hydroxyl ions increase. As water approaches its boiling point, the concentration of these species increases over seven times their concentrations at room temperature. At 150 °C, when the liquid state is maintained, these concentrations increase 15 times over room temperature. Due to its enhanced reactivity, high temperature water (HTW) has been studied as an etch and clean of thermally grown SiO2, Si3N4, and low-k films. High temperature deuterium oxide (HT-D2O) behaves similarly to HTW; however, it dissociates an order of magnitude less than HTW resulting in an equivalent reduction in reactive species. This allowed for the effects of reactive specie concentration on etch rate to be studied, providing valuable insight into how HTW compares to other high temperature wet etching processes such as hot phosphoric acid (HPA). Characterization was conducted using Fourier transform infrared spectroscopy (FTIR) to determine chemical changes due to etching, spectroscopic ellipsometry to determine film thickness, profilometry to measure thickness change across the samples, scanning electron microscopy (SEM), contact angle to measure changes in wetting behavior, and UV-Vis spectroscopy to measure dissolved silica in post etch water. HTW has demonstrated the ability to effective etch both SiO2 and Si3N4, HT-D2O also showed similar etch rates of Si3N4 indicating that a threshold reactive specie concentration is needed to maximize etch rate at a given temperature and additional reactive species do not further increase the etch rate. Because HTW has no hazardous byproducts, high temperature water could become a more environmentally friendly etchant of SiO2 and Si3N4 thin films.

Reactive ion etching has been used to obtain anisotropic silicon trenches with small sidewall angles. This work demonstrates that the sidewall angle can be controlled by the wafer temperature and there exists an Arrhenius-type relationship among isotropic polymer deposition rate, thickness of polymer, and sidewall angle.

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Thin films of alumina were deposited on ferrite (NiₓZn₍₁₋ₓ₎Fe₂O₄), glass, single crystal silicon and graphite substrates by RF sputtering. Though standard, amorphous Al₂O₃ films are readily soluble in hot phosphoric acid, these sputtered films exhibited only reluctant etchability by the acid. Experiments were initially performed to understand the parameters in the sputtering process which were influential in the formation of unetchable films. The results showed that a high concentration of water vapor or oxygen molecules in the sputtering chamber during deposition was the most significant variable controlling the growth of unetchable films. The films were categorized according to their degree of solubility in H₃PO₄ and were examined using various microanalytical characterization techniques. TEM analysis directly showed the existence of crystalline γ-Al₂O₃ in the film at the film-substrate interface. The γ-Al₂O₃ phase grew with a preferred orientation coincident with the substrate orientation--as in heteroepitaxial growth. The occurrence of this film phase was related to the oxygen partial pressure, the substrate material, and the substrate temperature and was believed to be the cause of the film's incomplete etching behavior.

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