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HIGH FREQUENCY TRANSFORMER LINKED CONVERTERS FOR PHOTOVOLTAIC APPLICATIONSLI, QUAN, q.li@cqu.edu.au January 2006 (has links)
This thesis examines converter topologies suitable for Module Integrated Converters
(MICs) in grid interactive photovoltaic (PV) systems, and makes a contribution to
the development of the MIC topologies based on the two-inductor boost converter,
which has received less research interest than other well known converters.
The thesis provides a detailed analysis of the resonant two-inductor boost converter
in the MIC implementations with intermediate constant DC links. Under variable
frequency control, this converter is able to operate with a variable DC gain while
maintaining the resonant condition. A similar study is also provided for the resonant
two-inductor boost converter with the voltage clamp, which aims to increase the
output voltage range while reducing the switch voltage stress. An operating point
with minimized power loss can be also established under the fixed load condition.
Both the hard-switched and the soft-switched current fed two-inductor boost
converters are developed for the MIC implementations with unfolding stages. Nondissipative
snubbers and a resonant transition gate drive circuit are respectively
employed in the two converters to minimize the power loss.
The simulation study of a frequency-changer-based two-inductor boost converter is
also provided. This converter features a small non-polarised capacitor in a second
phase output to provide the power balance in single phase inverter applications.
Four magnetic integration solutions for the two-inductor boost converter have also
been presented and they are promising in reducing the converter size and power loss.
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Peripheral Circuits Study for High Temperature Inverters Using SiC MOSFETsQi, Feng 12 September 2016 (has links)
No description available.
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Alimentation de circuit de commande rapprochée « Gate-drive » pour nouveaux convertisseurs de puissance haute tension / Gate-drive power supply for new high voltage power convertersGhossein, Layal 09 March 2018 (has links)
Le transport d’énergie par des lignes HVDC constitue le principal réseau de transmission d’énergie électrique du futur. Les convertisseurs de puissance (par exemple de type MMC) qui constitueront ce réseau devront être capables de gérer des tensions de l’ordre de centaines de kilovolts ce qui rend critique l’alimentation des dispositifs de contrôle (gate-drive) de ces convertisseurs. Il est nécessaire de concevoir des solutions qui garantissent l’alimentation de ces gate-drives avec une isolation.Pour ce faire, un circuit basé sur le principe du flyback et utilisant un JFET normalement passant a été développé. Il est placé en parallèle d’un condensateur typiquement connecté aux bornes d’un bras d’onduleur. Il permet d’alimenter le dispositif de puissance dès qu’une faible tension est appliquée à son entrée. Cette fonction est assurée grâce au caractère normalement passant du JFET. Pour le prototype développé, la tension du bras est de 2 kV. La tension de sortie est régulée à 24 V. De nos jours, des JFET normalement passants avec une tenue en tension supérieure à 2 kV n’existent pas sur le marché. Donc, pour supporter les tensions mises en jeu dans le circuit, une mise en série de JFET SiC normalement passants commandés par un MOSFET Si a été réalisée (montage « super-cascode »). Le circuit développé est capable de fournir 20 W pour alimenter des gate-drives à des potentiels flottants. Le rendement obtenu est proche de 60 %. Aussi, le problème d’isolation est résolu par cette solution d’auto-alimentation. / HVDC power transmission is the future of the electrical energy transmission network. The power converters (e.g. MMC) used in this network will be able to cope with voltages of hundreds of kV, making the power supply of the gate-drive devices in these converters challenging. It is then necessary to design solutions that guarantee the power supply of these gate-drives, while providing high voltage isolation. To do this, a circuit, based on the flyback principle, was developed. It is placed in parallel with a capacitor typically connected to a half-bridge circuit. It has an auto-start feature. This allows to supply the gate-drive as soon as a low voltage is applied to the input of the self-supply system. This is obtained by taking advantage of the normally-ON character of the JFET. In our prototype, the input voltage is 2 kV. High voltage JFETs of 2 kV and higher breakdown voltages are not yet available on the market. So, to achieve this high voltage capacity, a series of Normally-ON SiC JFETs controlled by a low voltage Si MOSFET (Super-cascode circuit) is used in the circuit. The developed circuit is able to supply 20 W at different floating potentials with output voltage regulated at 24 V and an efficiency close to 60%. The isolation problem is then solved using this solution.
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Optimization and Up-Gradation of 3-Phase Half-Bridge Inverter BoardShah, Vatsal Sonikbhai January 2021 (has links)
Solar Bora AB is a Linköping based company that provides end to end solution for clean and reliable energy. System developed by them generates high power 230V AC to run electrical appliances. The system consist of string of batteries which are charged by rooftop solar cells and the energy stored in the batteries is converted to AC to provide a grid voltage like experience even though the system is not connected to a grid. Energy stored in the batteries need to be converted from DC to AC efficiently. Inverter used for conversion should be efficient enough to reduce losses. This master thesis deals with optimization and Up-gradation of Half-Bridge inverter board so that switching loss can be minimized to increase efficiency. Initial part of the thesis involves investigation of different parameters which contribute to losses in inverter. Based on that some improvements were suggested in existing design of half-bridge board. Another task involved in the thesis was complete re-design of half-bridge. More efficient and robust components were selected for complete re-design. Based on new components and its specifications a new circuit and PCB was designed in Altium Designer. Lab testing was performed to verify the functionality of new Half-bridge.
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Ruggedness of High-Voltage IGBTs and Protection Solutions / Robustheit von Hochspannungs-IGBTs und SchutzmöglichkeitenBasler, Thomas 13 August 2014 (has links) (PDF)
IGBTs are today’s most important power-semiconductor switches in the field of medium and high power ranges. The good controllability of this device with a voltage source is advantageous.
The following work investigates the IGBT at short-circuit and surge-current condition. A particular focus is put on the IGBT’s feedback on the gate-control circuit. Special modes during the short circuit are measured and explained. For example the self-turn-off mechanism during short circuit and the collector-emitter voltage-clamping capability during fast short-circuit turn-off. Measurements are done at high-voltage IGBT chips and press-pack devices. The complete IGBT output characteristic up to the breakdown point is measured. Additionally, the short circuit is investigated at the parallel and series connection of IGBTs. Supporting semiconductor simulations of a high-voltage IGBT model, that was specially constructed for this work, analyse the internal behaviour during the mentioned conditions. The impact of different IGBT designs on the short-circuit ruggedness and breakdown behaviour is shown. Solutions for protecting the device from destruction during overload condition are presented. Measurements and simulations explain the surge-current capability of an IGBT and demonstrate the benefit for the application. / IGBTs gehören zu den wichtigsten Halbleiter-Leistungsbauelementen im mittleren und oberen Leistungsbereich. Die einfache Ansteuerbarkeit durch eine Spannungsquelle ist dabei von großem Vorteil.
Nachfolgende Untersuchungen beschäftigen sich mit dem IGBT-Kurzschluss und -Stoßstrom. Ein besonderes Augenmerk wird auf die Rückwirkung des IGBTs auf den Ansteuerkreis gelegt. Spezielle IGBT Modi werden gemessen und erklärt. Hierzu zählen zum Beispiel der Self-Turn-Off Mechanismus während des Kurzschlusses und die selbständige Kollektor-Emitter Spannungsbegrenzung während schnellen Kurzschlussabschaltens. Hierfür werden Messungen an Hochspannungs-IGBT Chips und Press-Pack IGBTs durchgeführt. Des Weiteren wird das komplette Ausgangskennlinienfeld des IGBTs vermessen und das Kurzschlussverhalten in der Parallel- und Reihenschaltung untersucht. Halbleitersimulationen eines Hochspannungs-IGBT Modells zeigen das interne IGBT Verhalten und unterstützen die Analyse der Messungen. Der Einfluss unterschiedlicher IGBT Designs in Bezug auf die Kurzschluss-Robustheit und das Durchbruchverhalten wird aufgezeigt. Möglichkeiten zum Schutz des IGBTs vor Zerstörung werden erörtert. Messungen und Simulationen zeigen die gute Stoßstromfestigkeit von IGBTs bei erhöhter Gatespannung auf. Davon kann die komplette Anwendung profitieren.
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Commande de composants grand gap dans un convertisseur de puisance synchrone sans diodes / A gate driver for diode-less wide band gap devices-based synchronous convertersGrézaud, Romain 06 November 2014 (has links)
Les composants de puissance grand gap présentent d'ores et déjà des caractéristiques statiques et dynamiques supérieures à leurs homologues en silicium. Mais ces composants d'un nouvel ordre s'accompagnent de différences susceptibles de modifier le fonctionnement de la cellule de commutation. Les travaux qui furent menés au cours de cette thèse se sont intéressés aux composants grand gap et à leur commande au sein d'un convertisseur de puissance synchrone robuste, haut rendement et haute densité de puissance. En particulier deux points critiques ont été identifiés et étudiés. Le premier est la grande sensibilité des composants grand gap aux composants parasites. Le second est l'absence de diode parasite interne entre le drain et la source de nombreux transistors grand gap. Pour répondre aux exigences de ces nouveaux composants et en tirer le meilleur profit, nous proposons des solutions innovantes, robustes, efficaces et directement intégrables aux circuits de commande. Des circuits de commande entièrement intégrés ont ainsi été conçus spécifiquement pour les composants grand gap. Ceux-ci permettent entre autres le contrôle précis des formes de commutation par l'adaptation de l'impédance de grille, et l'amélioration de l'efficacité énergétique et de la robustesse d'un convertisseur de puissance à base de composants grand sans diodes par une gestion dynamique et locale de temps morts très courts. / Wide band gap devices already demonstrate static and dynamic performances better than silicon transistors. Compared to conventional silicon devices these new wide band gap transistors have some different characteristics that may affect power converter operations. The work presented in this PhD manuscript deals with a specific gate drive circuit for a robust, high power density and high efficiency wide band gap devices-based power converter. Two critical points have been especially studied. The first point is the higher sensitivity of wide band gap transistors to parasitic components. The second point is the lack of parasitic body diode between drain and source of HEMT GaN and JFET SiC. In order to drive these new power devices in the best way we propose innovative, robust and efficient solutions. Fully integrated gate drive circuits have been specifically developed for wide band gap devices. An adaptive output impedance gate driver provides an accurate control of wide band gap device switching waveforms directly on its gate side. Another gate drive circuit improves efficiency and reliability of diode-less wide band gap devices-based power converters thanks to an auto-adaptive and local dead-time management.
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Ruggedness of High-Voltage IGBTs and Protection SolutionsBasler, Thomas 28 February 2014 (has links)
IGBTs are today’s most important power-semiconductor switches in the field of medium and high power ranges. The good controllability of this device with a voltage source is advantageous.
The following work investigates the IGBT at short-circuit and surge-current condition. A particular focus is put on the IGBT’s feedback on the gate-control circuit. Special modes during the short circuit are measured and explained. For example the self-turn-off mechanism during short circuit and the collector-emitter voltage-clamping capability during fast short-circuit turn-off. Measurements are done at high-voltage IGBT chips and press-pack devices. The complete IGBT output characteristic up to the breakdown point is measured. Additionally, the short circuit is investigated at the parallel and series connection of IGBTs. Supporting semiconductor simulations of a high-voltage IGBT model, that was specially constructed for this work, analyse the internal behaviour during the mentioned conditions. The impact of different IGBT designs on the short-circuit ruggedness and breakdown behaviour is shown. Solutions for protecting the device from destruction during overload condition are presented. Measurements and simulations explain the surge-current capability of an IGBT and demonstrate the benefit for the application. / IGBTs gehören zu den wichtigsten Halbleiter-Leistungsbauelementen im mittleren und oberen Leistungsbereich. Die einfache Ansteuerbarkeit durch eine Spannungsquelle ist dabei von großem Vorteil.
Nachfolgende Untersuchungen beschäftigen sich mit dem IGBT-Kurzschluss und -Stoßstrom. Ein besonderes Augenmerk wird auf die Rückwirkung des IGBTs auf den Ansteuerkreis gelegt. Spezielle IGBT Modi werden gemessen und erklärt. Hierzu zählen zum Beispiel der Self-Turn-Off Mechanismus während des Kurzschlusses und die selbständige Kollektor-Emitter Spannungsbegrenzung während schnellen Kurzschlussabschaltens. Hierfür werden Messungen an Hochspannungs-IGBT Chips und Press-Pack IGBTs durchgeführt. Des Weiteren wird das komplette Ausgangskennlinienfeld des IGBTs vermessen und das Kurzschlussverhalten in der Parallel- und Reihenschaltung untersucht. Halbleitersimulationen eines Hochspannungs-IGBT Modells zeigen das interne IGBT Verhalten und unterstützen die Analyse der Messungen. Der Einfluss unterschiedlicher IGBT Designs in Bezug auf die Kurzschluss-Robustheit und das Durchbruchverhalten wird aufgezeigt. Möglichkeiten zum Schutz des IGBTs vor Zerstörung werden erörtert. Messungen und Simulationen zeigen die gute Stoßstromfestigkeit von IGBTs bei erhöhter Gatespannung auf. Davon kann die komplette Anwendung profitieren.
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On Reliability of SiC Power Devices in Power ElectronicsSadik, Diane-Perle January 2017 (has links)
Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1.7kV voltage range, power devices in SiC are foreseen to replace Si Insulatedgatebipolar transistors (IGBTs) for applications targeting high efficiency,high operation temperatures and/or volume reductions. In particular, theSiC Metal-oxide semiconductor field-effect transistor (MOSFET) – which isvoltage controlled and normally-OFF – is the device of choice due to the easeof its implementation in designs using Si IGBTs.In this work the reliability of SiC devices, in particular that of the SiCMOSFET, has been investigated. First, the possibility of paralleling two discreteSiC MOSFETs is investigated and validated through static and dynamictests. Parallel-connection was found to be unproblematic. Secondly, drifts ofthe threshold voltage and forward voltage of the body diode of the SiC MOSFETare investigated through long-term tests. Also these reliability aspectswere found to be unproblematic. Thirdly, the impact of the package on thechip reliability is discussed through a modeling of the parasitic inductancesof a standard module and the impact of those inductances on the gate oxide.The model shows imbalances in stray inductances and parasitic elementsthat are problematic for high-speed switching. A long-term test on the impactof humidity on junction terminations of SiC MOSFETs dies and SiCSchottky dies encapsulated in the same standard package reveals early degradationfor some modules situated outdoors. Then, the short-circuit behaviorof three different types (bipolar junction transistor, junction field-effect transistor,and MOSFET) of 1.2 kV SiC switching devices is investigated throughexperiments and simulations. The necessity to turn OFF the device quicklyduring a fault is supported with a detailed electro-thermal analysis for eachdevice. Design guidelines towards a rugged and fast short-circuit protectionare derived. For each device, a short-circuit protection driver was designed,built and validated experimentally. The possibility of designing diode-lessconverters with SiC MOSFETs is investigated with focus on surge currenttests through the body diode. The discovered fault mechanism is the triggeringof the npn parasitic bipolar transistor. Finally, a life-cycle cost analysis(LCCA) has been performed revealing that the introduction of SiC MOSFETsin already existing IGBT designs is economically interesting. In fact,the initial investment is saved later on due to a higher efficiency. Moreover,the reliability is improved, which is beneficial from a risk-management pointof-view. The total investment over 20 years is approximately 30 % lower fora converter with SiC MOSFETs although the initial converter cost is 30 %higher. / Kiselkarbid (SiC) är ett bredbandgapsmaterial (WBG) som har flera fördelar,såsom högre maximal elektrisk fältstyrka, lägre ON-state resitans, högreswitch-hastighet och högre maximalt tillåten arbetstemperatur jämförtmed kisel (Si). I spänningsområdet 1,2-1,7 kV förutses att effekthalvledarkomponenteri SiC kommer att ersätta Si Insulated-gate bipolar transistorer(IGBT:er) i tillämpningar där hög verkningsgrad, hög arbetstemperatur ellervolymreduktioner eftersträvas. Förstahandsvalet är en SiC Metal-oxidesemiconductor field-effect transistor (MOSFET) som är spänningsstyrd ochnormally-OFF, egenskaper som möjliggör enkel implementering i konstruktionersom använder Si IGBTer.I detta arbete undersöks tillförlitligheten av SiC komponenter, specielltSiC MOSFET:en. Först undersöks möjligheten att parallellkoppla tvådiskretaSiC MOSFET:ar genom statiska och dynamiska prov. Parallellkopplingbefanns vara oproblematisk. Sedan undersöks drift av tröskelspänning ochbody-diodens framspänning genom långtidsprov. Ocksådessa tillförlitlighetsaspekterbefanns vara oproblematiska. Därefter undersöks kapslingens inverkanpåchip:et genom modellering av parasitiska induktanser hos en standardmoduloch inverkan av dessa induktanser pågate-oxiden. Modellen påvisaren obalans mellan de parasitiska induktanserna, något som kan varaproblematiskt för snabb switchning. Ett långtidstest av inverkan från fuktpåkant-termineringar för SiC-MOSFET:ar och SiC-Schottky-dioder i sammastandardmodul avslöjar tidiga tecken pådegradering för vissa moduler somvarit utomhus. Därefter undersöks kortslutningsbeteende för tre typer (bipolärtransistor,junction-field-effect transistor och MOSFET) av 1.2 kV effekthalvledarswitchargenom experiment och simuleringar. Behovet att stänga avkomponenten snabbt stöds av detaljerade elektrotermiska simuleringar för allatre komponenter. Konstruktionsriktlinjer för ett robust och snabbt kortslutningsskyddtas fram. För var och en av komponenterna byggs en drivkrets medkortslutningsskydd som valideras experimentellt. Möjligheten att konstrueradiodlösa omvandlare med SiC MOSFET:ar undersöks med fokus påstötströmmargenom body-dioden. Den upptäckta felmekanismen är ett oönskat tillslagav den parasitiska npn-transistorn. Slutligen utförs en livscykelanalys(LCCA) som avslöjar att introduktionen av SiC MOSFET:ar i existerandeIGBT-konstruktioner är ekonomiskt intressant. Den initiala investeringensparas in senare pågrund av en högre verkningsgrad. Dessutom förbättrastillförlitligheten, vilket är fördelaktigt ur ett riskhanteringsperspektiv. Dentotala investeringen över 20 år är ungefär 30 % lägre för en omvandlare medSiC MOSFET:ar även om initialkostnaden är 30 % högre. / <p>QC 20170524</p>
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Užití programovatelných hradlových polí v systémech průmyslové automatizace / Field Programmable Gate Arrays Usage in Industrial Automation SystemsNouman, Ziad January 2016 (has links)
Tato disertační práce se zabývá využitím programovatelných hradlových polí (FPGA) v diagnostice měničů, využívajících spínaných IGBT tranzistorů. Je zaměřena na budiče těchto výkonových tranzistorů a jejich struktury. Přechodné jevy veličin, jako jsou IG, VGE, VCE během procesu přepínání (zapnutí, vypnutí), mohou poukazovat na degradaci IGBT. Pro měření a monitorování těchto veličin byla navržena nová architektura budiče IGBT. Rychlé měření a monitorování během přepínacího děje vyžaduje vysokou vzorkovací frekvenci. Proto jsou navrhovány paralelní vysokorychlostní AD převodníky (> 50 MSPS). Práce je zaměřena převážně na návrh zařízení s FPGA včetně hardware a software. Byla navržena nová deska plošných spojů s FPGA, která plní požadované funkce, jako je řízení IGBT pomocí vícenásobných paralelních koncových stupňů, monitorování a diagnostiku, a propojení s řídicí jednotkou měniče.
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