With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approaching fast as predicted by the Moore’s Law, and the technological advancements as well as human needs in many ways pushing for faster devices, graphene has emerged as a powerful alternative solution. This is so because of its very special properties like high charge carrier mobility, highly linear dispersion relation, high current carrying capacity and so on. However, since we have a finite resistance at Dirac point, the on/off ratio in graphene devices is sufficiently low, making graphene devices not so suitable for logical applications. At the same time, the 1/f noise, which is understood till now to originate from surface disorders like those observed in a two-dimensional electron gas system like graphene and is a major unwanted outcome in mesoscopic regime devices, reduces very much at high frequencies, making these devices good candidates for high frequency analogue applications. Motivated by these observations, this work explores fabrication and characterization of graphene field effect transistors operating at microwave frequencies, and compares a double gated device performance to a mono-gated device having the same geometry, dielectric layer thickness and gate length. A simple electrostatic finite element simulation model has also been developed to support our experimental observations by fitting simulated gate coupling capacitance values to the measured data. The model helps us in understanding the level of interface trap charge densities introduced into the device channel during fabrication, and the effect of quantum capacitance on device performance, and is in line with the experimental observations. Our results show that a double gated graphene FET has superior performance compared to a mono-gated FET.

Sickle Cell Disease (SCD) is a hereditary monogenic disorder that affects millions of people worldwide and is associated with symptoms such as stroke, lethargy, chronic anemia, and increased mortality. SCD can be quickly detected and diagnosed using a simple blood test as an infant, but as of now, there is currently limited treatment to cure an individual of sickle cell disease. Recently, there have been several promising developments in CRISPR-Cas-associated gene-editing therapeutics; however, there have been limitations in gene-editing efficiency monitoring, which if improved, could be beneficial to advancing CRISPR-based therapy, especially in SCD. The CRISPR-Chip, a three-terminal graphene-based field effect transistor (gFET), was used to detect genomic samples of individuals with SCD, with and without amplification. With the dRNP-HTY3’ complex, CRISPR-Chip was able to specifically detect its target sequence with and without pre-amplification. With the dRNP-MUT3’ complex, CRISPR-Chip was only able to specifically detect one of its two target sequences. Facile detection, analysis, and editing of sickle cell disease using CRISPR-based editing and monitoring would be beneficial for simple diagnostic and gene-editing therapeutic treatment of other single nucleotide polymorphisms as well, such as beta-thalassemia and cystic fibrosis.

The thesis deals with preparation of graphene nanostructures and their applications in the measurement of transport properties of graphene. The contacts for measurement of resistance are fabricated by electron beam lithography on graphene exfoliated flakes, CVD graphene layers and grains. Graphene is also shaped using the same method. Resistivity of the layer, concentration and mobility of charge carriers are determined by different approaches. Hysteresis appearing in dependence of resistivity on the gate voltage is discussed as well. A significant part of the work is dedicated to monitoring the response of graphene resistance to relative humidity changes and potential use of graphene as a sensor of relative humidity.

After the experimental discovery of graphene at the beginning of the 21st century, many other interesting 2D materials have been discovered. However, the electrical and optical properties of these layers are greatly influenced by the composition and quality of the surrounding materials. In order to preserve the exceptional properties of thin films, attention has gradually been drawn to heterostructures from 2D composite materials. This thesis describes the preparation and characterization of heterostructures composed of graphene and hexagonal boron nitride. In addition, a specific focus will be placed on optimizing the production process of heterostructures by the dry thin film transfer process, prepared by micromechanical exfoliation. Characterization and quality of prepared layers are controlled by Raman spectroscopy, while morphology is examined by atomic force microscope (AFM). Furthermore, the electrical properties of the graphene-hBN device are discussed and the charge carrier of the graphene field-effect transistor is measured.

Like cell to the human body, transistors are the basic building blocks of any electronics circuits. Silicon has been the industries obvious choice for making transistors. Transistors with large size occupy large chip area, consume lots of power and the number of functionalities will be limited due to area constraints. Thus to make the devices smaller, smarter and faster, the transistors are aggressively scaled down in each generation. Moore's law states that the transistors count in any electronic circuits doubles every 18 months. Following this Moore's law, the transistor has already been scaled down to 14 nm. However there are limitations to how much further these transistors can be scaled down. Particularly below 10 nm, these silicon based transistors hit the fundamental limits like loss of gate control, high leakage and various other short channel effects. Thus it is not possible to favor the silicon transistors for future electronics applications. As a result, the research has shifted to new device concepts and device materials alternative to silicon. Carbon is the next abundant element found in the Earth and one of such carbon based nanomaterial is graphene. Graphene when extracted from Graphite, the same material used as the lid in pencil, have a tremendous potential to take future electronics devices to new heights in terms of size, cost and efficiency. Thus after its first experimental discovery of graphene in 2004, graphene has been the leading research area for both academics as well as industries. This dissertation is focused on the analysis and optimization of graphene based circuits for future electronics. The first part of this dissertation considers graphene based transistors for analog/radio frequency (RF) circuits. In this section, a dual gate Graphene Field Effect Transistor (GFET) is considered to build the case study circuits like voltage controlled oscillator (VCO) and low noise amplifier (LNA). The behavioral model of the transistor is modeled in different tools: well accepted EDA (electronic design automation) and a non-EDA based tool i.e. \simscape. This section of the dissertation addresses the application of non-EDA based concepts for the analysis of new device concepts, taking LC-VCO and LNA as a case study circuits. The non-EDA based approach is very handy for a new device material when the concept is not matured and the model files are not readily available from the fab. The results matches very well with that of the EDA tools. The second part of the section considers application of multiswarm optimization (MSO) in an EDA tool to explore the design space for the design of LC-VCO. The VCO provides an oscillation frequency at 2.85 GHz, with phase noise of less than -80 dBc/Hz and power dissipation less than 16 mW. The second part of this dissertation considers graphene nanotube field effect transistors (GNRFET) for the application of digital domain. As a case study, static random access memory (SRAM) hs been design and the results shows a very promising future for GNRFET based SRAM as compared to silicon based transistor SRAM. The power comparison between the two shows that GNRFET based SRAM are 93% more power efficient than the silicon transistor based SRAM at 45 nm. In summary, the dissertation is to expected to aid the state of the art in following ways: 1) A non-EDA based tool has been used to characterize the device and measure the circuit performance. The results well matches to that obtained from the EDA tools. This tool becomes very handy for new device concepts when the simulation needs to be fast and accuracy can be tradeoff with. 2)Since an analog domain lacks well-design design paradigm, as compared to digital domain, this dissertation considers case study circuits to design the circuits and apply optimization. 3) Performance comparison of GNRFET based SRAM to the conventional silicon based SRAM shows that with maturation of the fabrication technology, graphene can be very useful for digital circuits as well.

In dieser Arbeit werden verschiedene Aspekte des Designs und der Funktionsweise von in Flüssigkeit betriebenen Graphen-basierten Sensoren untersucht, wodurch neue Einblicke in grundlegende Prozesse an der Graphen-Flüssigkeits-Grenzfläche gewonnen werden. Zunächst wird die Wirkung redoxaktiver Moleküle in der Elektrolytlösung in elektrochemisch gesteuerten Graphen-FETs untersucht. Während des Betriebs kann ein heterogener Elektronentransfer stattfinden, der zu Faradayschen Strömen am Graphenkanal führt. Diese führen zu Verschiebungen der Transferkurve von Graphen, da die Graphen-Flüssigkeits-Grenzfläche eine nur teilweise polarisierbare Elektrode darstellt. Dies wird als „Faradayscher Effekt“ bezeichnet. Er unterscheidet sich grundlegend von typischen Transduktionsmechanismen. Parameter, die den Faradayschen Effekts beeinflussen, werden detailliert untersucht. So sind die Verschiebungen z.B. abhängig von der Graphenkanalfläche. Der zweite Abschnitt konzentriert sich auf die Kante von Graphen, die einen nanoskopischen eindimensionalen Defekt des zweidimensionalen Materials darstellt. In dieser Arbeit wird ein neuer Graphen-FET vorgestellt, der auf der Steuerung von Graphen nur über die elektrochemische Doppelschicht an der Kante basiert. Um dies zu erreichen, wird der basale Teil des Graphens durch eine Passivierung vollständig von der Elektrolytlösung abgeschirmt. Des Weiteren wird gezeigt, dass die Kante des Graphens durch elektrochemische Modifizierung kovalent funktionalisiert werden kann, wodurch die Ladungsdichte an der Graphenkanten-Flüssigkeits-Grenzfläche effektiv verändert wird. Dabei bleiben die vorteilhaften Eigenschaften der Devices erhalten. Schließlich wird ein neuartiger Ansatz zu Untersuchungen an der Graphenkante in Form von mit hexagonalem Bornitrid-verkapseltem Graphen-Elektroden verfolgt. Die elektroanalytische Detektion von Ferrocenmethanol und Dopamin an der Graphenkante mittels zyklischer Voltammetrie wird an diesen Elektroden gezeigt. / Several aspects of the design and function of sensors based on graphene operated in liquid have been investigated in this thesis, providing new insight into fundamental processes at the graphene-liquid-interface. First, the effect of the presence of redox active molecules in the analyte solution of electrochemically gated graphene FETs is explored. During operation, heterogeneous electron transfer may occur at relevant potentials leading to Faradaic currents at the graphene channel. These lead to doping-like shifts of the transfer curve of graphene, as the graphene-liquid-interface represents a partially polarizable electrode. Due to the origin of the shifts, this observation is termed “Faradaic effect”. It is fundamentally different from typically discussed transduction mechanisms. Parameters influencing the direction and magnitude of the Faradaic effect are discussed in detail, e.g. the shifts are the stronger, the larger the area of the graphene channel. The second part focuses on the edge of graphene, which represents a nanoscopic one-dimensional defect of the two-dimensional material. Here, a new type of graphene FET is introduced based on electrochemical gating of graphene exclusively via the electrical double layer at its edge. To achieve edge-gating, the basal part of graphene is passivated by a photoresist and shielded entirely from interaction with the solution. It is demonstrated that the edge of graphene can be functionalized covalently via electrografting. This changes the charge density at the graphene edge-liquid-interface effectively, while maintaining the favorable transfer characteristics of the devices. Finally, a novel approach towards graphene edge devices was pursued in the form of hexagonal boron nitride encapsulated graphene. The electrochemical detection of ferrocene methanol and dopamine was demonstrated in standard and fastscan cyclic voltammetry at the edge of graphene in these devices.