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Design, characterisation and reliability of ohmic contacts for HBT applicationsAmin, Farid Ahmed January 2002 (has links)
No description available.
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Monolithic-Microwave Integrated-Circuit Design of Hetero-Junction Bipolar Transistor Power Amplifier for Wireless CommunicationsLi, Jian-Yu 01 July 2000 (has links)
Using GaAs HBT provided by AWSC to construct Gummel
Poon static model.then using the GaAs HBT processing
of GCS to design MMIC power amplifier for the 1.9~2.0
GHz PCS system. This power amplifier exhibits an output
power of 27dBm and a power added efficiency as high as
32% at an operation voltage of 3.4V.
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Systematic characterization and modeling of small and large signal performance of 50 - 200 GHz SiGe HBTsPan, Jun, Niu, Guofu. January 2005 (has links) (PDF)
Dissertation (Ph.D.)--Auburn University, 2005. / Abstract. Vita. Includes bibliographic references.
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SIMULATION STUDY OF PARASITIC BARRIER FORMATION IN Si/SiGe HETEROSTRUCTURESBREED, ANIKET AJITKUMAR 27 September 2002 (has links)
No description available.
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DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORSBALARAMAN, PRADEEP ARUGUNAM January 2003 (has links)
No description available.
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Design and evaluation of a g <inf>m</inf>-RC bandpass filter using a 42 GHz linear OTA incorporating heterojunction bipolar transistorsSun, Shao-Chi January 1994 (has links)
No description available.
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Monolithic-Microwave Integrated-Circuit Design of Quadrature Modulator for Wireless CommunicationsWu, Jian-Ming 15 July 2000 (has links)
This thesis researchs the design of quadrature modulator consists of 120MHz quadrature modulator that is fabricated using hybrid elements and print circuit board (PCB) technology for digital signal generator and quadrature modulator monolithic-microwave integrated-circuit (MMIC) that is fabricated using GaAs heterojunction bipolar transistor (HBT) technology for Personal Communication Service (PCS) applications. The 120MHz quadrature modulator incorporates power divider/combiner, phase shifter and doubly balanced mixer; the design architecture, principle and measurement results of division are presented in this thesis. A quadrature modulator is implemented by combining every division and measures specifications accurately, comparing with that of Agilent ESG-D series digital signal generator with the same carrier frequency and digital modulation. The quadrature modulator MMIC for PCS applications incorporates phase shifter, Gilbert cell mixer, differential to single-ended converter and RF amplifier
at output; the design architecture, principle and simulation results of division are presented in this thesis. A quadrature modulator is integrated by combining every division and simulates parameters strictly.For troublesome specification measurement of quadrature modulator, this thesis also presents measurement method and instrument setup detailedly.
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Analysis and Optimization of Inductively Degenerated Common-Emitter Low-Noise Amplifier Utilizing Miller EffectLin, Chi-min 03 September 2009 (has links)
This thesis proposes a modified inductively degenerated common-emitter low-noise amplifier. To add a series-shunt feedback capacitance in series to the base of the cascode transistor for increasing the load impedance of the common-emitter transistor and enhancing the Miller effect, it is applied to improve the circuit¡¦s performance. By thoroughly studying the Miller effect for the input matching, noise, and linearity analysis and derivation of the modified structure, the theoretical analysis and experiments demonstrate the improved linearity and well noise performance. In addition, the proposed method is presented with the good figure of merit.
The proposed method is presented in a hybrid circuit with the NEC 2S5010 NPN transistor for 900 MHz applications. It demonstrates that this method improves the linearity and the figure of merit has been increased by 50 to 70 percent. Moreover, the novel low noise amplifier is designed with a 0.35£gm SiGe BiCMOS process supported by the TSMC for 5.7 GHz WLAN band applications. It is found that the circuit has the characteristic of IM3 nonlinearity cancellation because the cascode transistor eliminates the third-order intermodulation genaerated by the common-emitter transistor. This thesis establishes a realizable method for high-linearity low-noise amplifier.
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Low temperature modeling of I-V characteristics and RF small signal parameters of SiGe HBTsXu, Ziyan, Niu, Guofu. January 2009 (has links)
Thesis--Auburn University, 2009. / Abstract. Vita. Includes bibliographic references (p.64-66).
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Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors / AlGaN/SiCヘテロ接合界面制御および高電流増幅率SiC系バイポーラトランジスタの実現Miyake, Hiroki 26 March 2012 (has links)
Kyoto University (京都大学) / 0048 / 新制・課程博士 / 博士(工学) / 甲第16862号 / 工博第3583号 / 新制||工||1541(附属図書館) / 29537 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 木本 恒暢, 教授 藤田 静雄, 准教授 浅野 卓 / 学位規則第4条第1項該当
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