Dans les microcavités de semiconducteurs, un régime de couplage fort peut être obtenu entre le mode Fabry-Pérot de la cavité et l'exciton confiné dans le puits quantique. Il se traduit par l'apparition de nouveaux états propres, les polaritons de microcavité, états mixtes exciton-photon, dont la dispersion et la densité d'états sont très différentes de celles d'un exciton nu. Il en résulte une profonde modification des non-linéarités et des propriétés optiques du système. Cette thèse est consacrée à l'étude de la dynamique cohérente et non-linéaire des polaritons de microcavité au moyen d'expériences de mélange à quatre ondes. Par leur composante excitonique, les polaritons peuvent interagir par interaction coulombienne, mais sont aussi sensibles au remplissage de l'espace des phases (blocage de Pauli). Dans un premier temps nous déterminons la contribution de ces non-linéarités intrinsèques à la réponse cohérente du système en analysant nos mesures grâce à la résolution numérique des équations de Maxwell-Bloch. Dans un deuxième temps, afin d'étudier l'influence de la dispersion sur la dynamique des polaritons, nous avons effectué une expérience de mélange à quatre ondes résolue en angle. Nous mettons en évidence une inhibition de la perte de cohérence en centre de zone de Brillouin. Ces résultats sont en très bon accord avec un modèle d'élargissement collisionnel gouverné par la diffusion polariton-polariton, qui reste faible tant que le réservoir excitonique n'est pas accessible. D'autre part, en régime d'oscillation paramétrique, dans lequel la diffusion polariton-polariton peut être stimulée par l'occupation de l'état final, nous étudions la dynamique des polaritons de pompe. Nous trouvons alors une forte perte de cohérence sous excitation à « l'angle magique ».

La création d'un gaz de trous bidimensionnel dans un puits quantique (Cd,Mn)Te permet d'induire une interaction ferromagnétique entre les spins localisés du semiconducteur magnétique dilué. Une nouvelle méthode de dopage utilisant les pièges à la surface de l'échantillon a été mise au point ; elle a permis d'étendre la gamme des valeurs expérimentalement accessibles pour les densités de spins et de porteurs. Les propriétés magnétiques sont mesurées par spectroscopie magnéto-optique (photoluminescence). Nous mesurons une température critique plus élevée que la température de Curie-Weiss, ce qui suggère un effet du désordre. Des mesures locales de la photoluminescence permettent de tracer des cartes de l'aimantation spontanée, de la densité de porteurs et de la densité de spins localisés : les échantillons dopés par la surface présentent des fluctuations de densité de porteurs plus grandes que les échantillons dopés par impuretés azote, et ces fluctuations induisent directement des fluctuations de l'aimantation spontanée.

Title from PDF of title page. / Document formatted into pages; contains 78 pages. / Thesis (M.S.E.E.)--University of South Florida, 2003. / Includes bibliographical references. / Text (Electronic thesis) in PDF format. / ABSTRACT: With CdTe based photovoltaics developed by close spaced sublimation reaching efficiencies of over 16%, commercialization of this technology draws serious attention. Today large area industrial modules have not been able to produce the same performance of their laboratory counterparts. This work provides a means for understanding the various technical challenges in developing an effective deposition technology for large area processing. The submodule process investigated provides a model for continuous and sequential processing of subsequent films. The system has a unique design and constructed with the provision for a moving transport module for the substrate transport. The process was developed to deposit large area CdTe (3 x 3 sq. inch) and provides valuable insights for the development of a large area deposition system. Upon optimizing the system for reproducibility, proper deposition conditions were established. / ABSTRACT: Films deposited under various conditions were studied to improve our understanding of the influence of processing conditions on device performance. The key advantage of this technique over others is its high deposition rate, simplicity of operation and high conversion efficiency. Typical deposition times were two minutes and could be reduced to as low as 45 sec with little variation in performance. The four major parameters that influence the films prepared by close spaced sublimation, namely substrate temperature, source temperature, ambient pressure, and spacing were optimized for best device performance. The influence of each parameter on deposition rate and cell efficiency was also studied. The best cells produced by this technology had an efficiency of 13% with Voc=830 mV, FF= 74% and Jsc=21.1 mA/cm2. / System requirements: World Wide Web browser and PDF reader. / Mode of access: World Wide Web.

abstract: The research described in this dissertation has involved the use of transmission electron microcopy (TEM) to characterize the structural properties of II-VI and III-V compound semiconductor heterostructures and superlattices. The microstructure of thick ZnTe epilayers (~2.4 µm) grown by molecular beam epitaxy (MBE) under virtually identical conditions on GaSb, InAs, InP and GaAs (100) substrates were compared using TEM. High-resolution electron micrographs revealed a highly coherent interface for the ZnTe/GaSb sample, and showed extensive areas with well-separated interfacial misfit dislocations for the ZnTe/InAs sample. Lomer edge dislocations and 60o dislocations were commonly observed at the interfaces of the ZnTe/InP and ZnTe/GaAs samples. The amount of residual strain at the interfaces was estimated to be 0.01% for the ZnTe/InP sample and -0.09% for the ZnTe/GaAs sample. Strong PL spectra for all ZnTe samples were observed from 80 to 300 K. High quality GaSb grown by MBE on ZnTe/GaSb (001) virtual substrates with a temperature ramp at the beginning of the GaSb growth has been demonstrated. High-resolution X-ray diffraction (XRD) showed clear Pendellösung thickness fringes from both GaSb and ZnTe epilayers. Cross-section TEM images showed excellent crystallinity and smooth morphology for both ZnTe/GaSb and GaSb/ZnTe interfaces. Plan-view TEM image revealed the presence of Lomer dislocations at the interfaces and threading dislocations in the top GaSb layer. The defect density was estimated to be ~1 x107/cm2. The PL spectra showed improved optical properties when using the GaSb transition layer grown on ZnTe with a temperature ramp. The structural properties of strain-balanced InAs/InAs1-xSbx SLs grown on GaSb (001) substrates by metalorganic chemical vapor deposition (MOCVD) and MBE, have been studied using XRD and TEM. Excellent structural quality of the InAs/InAs1-xSbx SLs grown by MOCVD has been demonstrated. Well-defined ordered-alloy structures within individual InAs1-xSbx layers were observed for samples grown by modulated MBE. However, the ordering disappeared when defects propagating through the SL layers appeared during growth. For samples grown by conventional MBE, high-resolution images revealed that interfaces for InAs1-xSbx grown on InAs layers were sharper than for InAs grown on InAs1-xSbx layers, most likely due to a Sb surfactant segregation effect. / Dissertation/Thesis / Ph.D. Physics 2012

abstract: A dual chamber molecular beam epitaxy (MBE) system was rebuilt for the growth of 6.1 Angstrom II-VI and III-V compound semiconductor materials that are to be used in novel optoelectronic devices that take advantage of the nearly continuous bandgap availability between 0 eV and 3.4 eV. These devices include multijunction solar cells and multicolor detectors. The MBE system upgrade involved the conversion of a former III-V chamber for II-VI growth. This required intensive cleaning of the chamber and components to prevent contamination. Special features including valved II-VI sources and the addition of a cold trap allowed for the full system to be baked to 200 degrees Celsius to improve vacuum conditions and reduce background impurity concentrations in epilayers. After the conversion, the system was carefully calibrated and optimized for the growth of ZnSe and ZnTe on GaAs (001) substrates. Material quality was assessed using X-ray diffraction rocking curves. ZnSe layers displayed a trend of improving quality with decreasing growth temperature reaching a minimum full-width half-maximum (FWHM) of 113 arcsec at 278 degrees Celsius. ZnTe epilayer quality increased with growth temperature under Zn rich conditions attaining a FWHM of 84 arcsec at 440 degrees Celsius. RHEED oscillations were successfully observed and used to obtain growth rate in situ for varying flux and temperature levels. For a fixed flux ratio, growth rate decreased with growth temperature as the desorption rate increased. A directly proportional dependence of growth rate on Te flux was observed for Zn rich growth. Furthermore, a method for determining the flux ratio necessary for attaining the stoichiometric condition was demonstrated. / Dissertation/Thesis / M.S. Electrical Engineering 2012

abstract: There has been recent interest in demonstrating solar cells which approach the detailed-balance or thermodynamic efficiency limit in order to establish a model system for which mass-produced solar cells can be designed. Polycrystalline CdS/CdTe heterostructures are currently one of many competing solar cell material systems. Despite being polycrystalline, efficiencies up to 21 % have been demonstrated by the company First Solar. However, this efficiency is still far from the detailed-balance limit of 32.1 % for CdTe. This work explores the use of monocrystalline CdTe/MgCdTe and ZnTe/CdTe/MgCdTe double heterostructures (DHs) grown on (001) InSb substrates by molecular beam epitaxy (MBE) for photovoltaic applications. Undoped CdTe/MgCdTe DHs are first grown in order to determine the material quality of the CdTe epilayer and to optimize the growth conditions. DH samples show strong photoluminescence with over double the intensity as that of a GaAs/AlGaAs DH with an identical layer structure. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a carrier lifetime of up to 179 ns for a 2 µm thick CdTe layer, which is more than one order of magnitude longer than that of polycrystalline CdTe films. MgCdTe barrier layers are found to be effective at confining photogenerated carriers and have a relatively low interface recombination velocity of 461 cm/s. The optimal growth temperature and Cd/Te flux ratio is determined to be 265 °C and 1.5, respectively. Monocrystalline ZnTe/CdTe/MgCdTe P-n-N DH solar cells are designed, grown, processed into solar cell devices, and characterized. A maximum efficiency of 6.11 % is demonstrated for samples without an anti-reflection coating. The low efficiency is mainly due to the low open-circuit voltage (V_oc), which is attributed to high dark current caused by interface recombination at the ZnTe/CdTe interface. Low-temperature measurements show a linear increase in V_oc with decreasing temperature down to 77 K, which suggests that the room-temperature operation is limited by non-radiative recombination. An open-circuit voltage of 1.22 V and an efficiency of 8.46 % is demonstrated at 77 K. It is expected that a coherently strained MgCdTe/CdTe/MgCdTe DH solar cell design will produce higher efficiency and V_oc compared to the ZnTe/CdTe/MgCdTe design with relaxed ZnTe layer. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2014

abstract: Recently a new materials platform consisting of semiconductors grown on GaSb and InAs substrates with lattice constants close to 6.1 A was proposed by our group for various electronic and optoelectronic applications. This materials platform consists of both II-VI (MgZnCdHg)(SeTe) and III-V (InGaAl)(AsSb) compound semiconductors, which have direct bandgaps spanning the entire energy spectrum from far-IR (~0 eV) up to UV (~3.4 eV). The broad range of bandgaps and material properties make it very attractive for a wide range of applications in optoelectronics, such as solar cells, laser diodes, light emitting diodes, and photodetectors. Moreover, this novel materials system potentially offers unlimited degrees of freedom for integration of electronic and optoelectronic devices onto a single substrate while keeping the best possible materials quality with very low densities of misfit dislocations. This capability is not achievable with any other known lattice-matched semiconductors on any available substrate. In the 6.1-A materials system, the semiconductors ZnTe and GaSb are almost perfectly lattice-matched with a lattice mismatch of only 0.13%. Correspondingly, it is expected that high quality ZnTe/GaSb and GaSb/ZnTe heterostructures can be achieved with very few dislocations generated during growth. To fulfill the task, their MBE growth and material properties are carefully investigated. High quality ZnTe layers grown on various III-V substrates and GaSb grown on ZnTe are successfully achieved using MBE. It is also noticed that ZnTe and GaSb have a type-I band-edge alignment with large band offsets (delta_Ec=0.934 eV, delta_Ev=0.6 eV), which provides strong confinement for both electrons and holes. Furthermore, a large difference in refractive index is found between ZnTe and GaSb (2.7 and 3.9, respectively, at 0.7 eV), leading to excellent optical confinement of the guided optical modes in planar semiconductor lasers or distributed Bragg reflectors (DBR) for vertical-cavity surface-emitting lasers. Therefore, GaSb/ZnTe double-heterostructure and ZnTe/GaSb DBR structure are suitable for use in light emitting devices. In this thesis work, experimental demonstration of these structures with excellent structural and optical properties is reported. During the exploration on the properties of various ZnTe heterostructures, it is found that residual tensile strains exist in the thick ZnTe epilayers when they are grown on GaAs, InP, InAs and GaSb substrates. The presence of tensile strains is due to the difference in thermal expansion coefficients between the epilayers and the substrates. The defect densities in these ZnTe layers become lower as the ZnTe layer thickness increases. Growth of high quality GaSb on ZnTe can be achieved using a temperature ramp during growth. The influence of temperature ramps with different ramping rates in the optical properties of GaSb layer is studied, and the samples grown with a temperature ramp from 360 to 470 C at a rate of 33 C/min show the narrowest bound exciton emission peak with a full width at half maximum of 15 meV. ZnTe/GaSb DBR structures show excellent reflectivity properties in the mid-infrared range. A peak reflectance of 99% with a wide stopband of 480 nm centered at 2.5 um is measured from a ZnTe/GaSb DBR sample of only 7 quarter-wavelength pairs. / Dissertation/Thesis / Ph.D. Physics 2012

Des nanocristaux (NC) de CdSe et CdS ont été élaborés par grossissement thermique à partir de précurseurs organométalliques, de type thiophénolates de cadmium, synthétisés préalablement par voie sol-gel. Le protocole de synthèse des précurseurs a été validé par le contrôle de leurs compositions et de leur stabilité par spectrométrie de masse (SM) ESI-FTICR. La mise en place d'un protocole original avec croissance thermique par paliers à des T° de réaction plus basses que celles habituellement employées a permis d'obtenir des NC de tailles inférieures à celles couramment obtenues (< 2nm) durant un temps de réaction n'excédant pas 200 min. Les NC ont été caractérisés conjointement par plusieurs techniques physiques et physico-chimiques. Leur forme sphérique, leurs diamètres moyens (~ 2-3,5 nm) et leurs distributions de taille (8-19 %) ont été déterminés par TEM. Leur nature cristalline de type würtzite a été vérifiée par DRX. Une estimation supplémentaire des tailles moyennes, en accord avec les résultats de TEM, a été obtenue par DRX et SM MALDI-TOF. La spectrométrie optique à T° ambiante a mis en évidence l'évolution des propriétés d'absorption et de photoluminescence des NC en fonction de la T° de prélèvement, en particulier le glissement de l'énergie de transition fondamentale sous l'effet du confinement quantique. L'ensemble des résultats s'inscrit dans la correspondance empirique énergie excitonique-taille du NC communément admise et valide le protocole d'élaboration des NC adopté. L'analyse théorique des spectres optiques en approximation de la fonction enveloppe a montré les limites de validité de cette approche aux très petites tailles de NC / CdSe and CdS nanocrystals (NC) were produced by thermally growing cadmium thiophenolates organometallic precursors. These precursors were previously synthesized by a sol-gel reaction. The synthesis protocol has been validated by the study of their composition and stability by ESI-FTICR mass spectrometry. An innovative thermal growth method has been used by applying a temperature ramp with extraction of NC at fixed values. This approach is different of usual methods described in the literature as the NC sampling is done at lower temperatures ensuring the elaboration of smaller particles (< 2 nm) during shorter reaction time (< 200 min). The NC were characterized by combined physical and physical-chemical techniques. Spherical shape, average size (~2-3,5 nm) and size distribution (8-19 %) were determined by TEM. DRX confirmed the würtzite structure of the synthesized NC. Additional data of average size were obtained by DRX and MALDI-TOF mass spectrometry confirming those obtained by TEM. Room temperature optical spectrometry has demonstrated the evolution of the absorption and the photoluminescence as a function of the extraction temperature, more particularly, the fundamental transition of energy shifts due to the quantum confinement effect. These results are consistent with the empirical correspondence 'excitonic energy/NC size' universally recognized. Finally, the theoretical study of the different optical spectra shows the limit of the envelope-function approximation for very small size particles

Nonpolar ZnO/ZnMgO-based optical microcavities have been grown on (10-10) m-plane ZnO substrates by plasma-assisted molecular beam epitaxy. Reflectivity measurements indicate an exponential increase of the cavity quality factor with the number of layers in the distributed Bragg reflectors. Most importantly, microreflectivity spectra recorded with a spot size in the order of 2 lm show a negligible photonic disorder (well below 1 meV), leading to local quality factors equivalent to those obtained by macroreflectivity. The anisotropic character of the nonpolar heterostructures manifests itself both in the surface features, elongated parallel to the in-plane c direction, and in the optical spectra, with two cavity modes being observed at different energies for orthogonal polarizations.

We conclusively explain the different lasing mode energies in ZnO nano- and microcavities observed by us and reported in literature. The limited penetration depth of usually used excitation lasers results in an inhomogeneous spatial gain region depending on the structure size and geometry. Hence, weakly or even nonexcited areas remain present after excitation, where modes are instantaneously suppressed by excitonic absorption. We compare the effects for ZnO microwires, nanowires, and tetrapod-like structures at room temperature and demonstrate that the corresponding mode selective effect is most pronounced for whispering-gallery modes in microwires with a hexagonal cross section. Furthermore, the absorptive lasing mode suppression will be demonstrated by correlating the spot size of the excitation laser and the lasing mode characteristic of a single ZnO nanowire.