abstract: Recently a new materials platform consisting of semiconductors grown on GaSb and InAs substrates with lattice constants close to 6.1 A was proposed by our group for various electronic and optoelectronic applications. This materials platform consists of both II-VI (MgZnCdHg)(SeTe) and III-V (InGaAl)(AsSb) compound semiconductors, which have direct bandgaps spanning the entire energy spectrum from far-IR (~0 eV) up to UV (~3.4 eV). The broad range of bandgaps and material properties make it very attractive for a wide range of applications in optoelectronics, such as solar cells, laser diodes, light emitting diodes, and photodetectors. Moreover, this novel materials system potentially offers unlimited degrees of freedom for integration of electronic and optoelectronic devices onto a single substrate while keeping the best possible materials quality with very low densities of misfit dislocations. This capability is not achievable with any other known lattice-matched semiconductors on any available substrate. In the 6.1-A materials system, the semiconductors ZnTe and GaSb are almost perfectly lattice-matched with a lattice mismatch of only 0.13%. Correspondingly, it is expected that high quality ZnTe/GaSb and GaSb/ZnTe heterostructures can be achieved with very few dislocations generated during growth. To fulfill the task, their MBE growth and material properties are carefully investigated. High quality ZnTe layers grown on various III-V substrates and GaSb grown on ZnTe are successfully achieved using MBE. It is also noticed that ZnTe and GaSb have a type-I band-edge alignment with large band offsets (delta_Ec=0.934 eV, delta_Ev=0.6 eV), which provides strong confinement for both electrons and holes. Furthermore, a large difference in refractive index is found between ZnTe and GaSb (2.7 and 3.9, respectively, at 0.7 eV), leading to excellent optical confinement of the guided optical modes in planar semiconductor lasers or distributed Bragg reflectors (DBR) for vertical-cavity surface-emitting lasers. Therefore, GaSb/ZnTe double-heterostructure and ZnTe/GaSb DBR structure are suitable for use in light emitting devices. In this thesis work, experimental demonstration of these structures with excellent structural and optical properties is reported. During the exploration on the properties of various ZnTe heterostructures, it is found that residual tensile strains exist in the thick ZnTe epilayers when they are grown on GaAs, InP, InAs and GaSb substrates. The presence of tensile strains is due to the difference in thermal expansion coefficients between the epilayers and the substrates. The defect densities in these ZnTe layers become lower as the ZnTe layer thickness increases. Growth of high quality GaSb on ZnTe can be achieved using a temperature ramp during growth. The influence of temperature ramps with different ramping rates in the optical properties of GaSb layer is studied, and the samples grown with a temperature ramp from 360 to 470 C at a rate of 33 C/min show the narrowest bound exciton emission peak with a full width at half maximum of 15 meV. ZnTe/GaSb DBR structures show excellent reflectivity properties in the mid-infrared range. A peak reflectance of 99% with a wide stopband of 480 nm centered at 2.5 um is measured from a ZnTe/GaSb DBR sample of only 7 quarter-wavelength pairs. / Dissertation/Thesis / Ph.D. Physics 2012

abstract: The quest to find efficient algorithms to numerically solve differential equations isubiquitous in all branches of computational science. A natural approach to address this problem is to try all possible algorithms to solve the differential equation and choose the one that is satisfactory to one's needs. However, the vast variety of algorithms in place makes this an extremely time consuming task. Additionally, even after choosing the algorithm to be used, the style of programming is not guaranteed to result in the most efficient algorithm. This thesis attempts to address the same problem but pertinent to the field of computational nanoelectronics, by using PETSc linear solver and SLEPc eigenvalue solver packages to efficiently solve Schrödinger and Poisson equations self-consistently. In this work, quasi 1D nanowire fabricated in the GaN material system is considered as a prototypical example. Special attention is placed on the proper description of the heterostructure device, the polarization charges and accurate treatment of the free surfaces. Simulation results are presented for the conduction band profiles, the electron density and the energy eigenvalues/eigenvectors of the occupied sub-bands for this quasi 1D nanowire. The simulation results suggest that the solver is very efficient and can be successfully used for the analysis of any device with two dimensional confinement. The tool is ported on www.nanoHUB.org and as such is freely available. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2020

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第18291号 / 工博第3883号 / 新制||工||1596(附属図書館) / 31149 / 京都大学大学院工学研究科高分子化学専攻 / (主査)教授 伊藤 紳三郎, 教授 木村 俊作, 教授 辻井 敬亘 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DGAM

CdTe and ZnTe are common semiconductors, currently used in a wide variety of applications. Heterostructures, composed of two or more layered materials, create further potential for the use of these semiconductors in the development of new technologies. In this thesis, the epitaxial growth of CdTe/ZnTe thin films and heterostructures are studied with the intention of better understanding the mechanisms by which they grow and how their overall structure and properties may be modified. Single-layer, bilayer, and multilayer structures were grown by pulsed laser deposition on sapphire substrates. The resulting crystal structure, interface, and optical properties were characterized using X-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and electron microscopy and spectroscopy techniques. It was found that the growth conditions have a direct impact on the crystal quality of these materials, that can be understood in terms of the growth dynamics and film-substrate interactions. Domain formation was also found to vary between CdTe and ZnTe depositions, revealing important information about their growth. This work presents methods of consistently producing high quality CdTe and ZnTe thin films and bilayers, and insight into how this may be applied to the growth of multilayer films. / Thesis / Master of Science (MSc)

No description available.

In this dissertation, we utilized a wide range of complementary synchrotron-based X-ray spectroscopic and scattering techniques, notably X-ray absorption spectroscopy (XAS), hard X-ray photoelectron spectroscopy (HAXPES), standing-wave X-ray photoelectron spectroscopy (SW-XPS), and X-ray resonant magnetic reflectometry (XRMR), to understand and control the phenomenon of emergent interfacial ferromagnetism in strongly-correlated oxide heterostructures. This field holds great promise for the development of next-generation spintronic devices. In the heterostructures we investigated, neither of the parent oxide layers exhibits inherent ferromagnetism. Yet, when these layers are combined in an epitaxial film stack, charge-transfer phenomena give rise to an emergent ferromagnetic state at the interface. Throughout my graduate studies, I focused on studying such charge-transfer phenomena as the driving force for stabilizing interfacial ferromagnetism. This dissertation is structured around two main projects. The first project delves into the intriguing possibility of tuning the emergent interfacial ferromagnetism. More specifically, we investigated the mechanisms for suppressing interfacial charge transfer to gain control over and manipulate this magnetic phenomenon. In our second project, we explored a different facet of interfacial ferromagnetism, focusing on the origins of the imbalance in the magnitudes of the magnetic moment between the top and bottom interfaces in the same layer. Our investigation aimed to uncover the possible causes of this imbalance, ultimately leading us to scrutinize the role of defect states in this magnetic asymmetry. In the first part of this dissertation, we investigated the thickness-dependent metal-insulator transition within LaNiO3 and how it impacts the electronic and magnetic states at the interface between LaNiO3 and CaMnO3. We present a direct observation of a reduced effective valence state in the interfacial Mn cations. This reduction is most pronounced in the metallic LaNiO3/CaMnO3 superlattice, where the above-critical LaNiO3 thickness of 6-unit cells triggers this phenomenon, facilitated by the charge transfer of the itinerant Ni 3d eg electrons into the interfacial CaMnO3 layer. In contrast, when we examine the insulating superlattice with a LaNiO3 thickness below the critical value (2-unit cells), we observe a homogeneous effective valence state of Mn throughout the CaMnO3 layers. This homogeneity is attributed to the suppression of charge transfer across the interface. The second part of this dissertation delves deeply into the complexities of interfacial magnetism within the CaMnO3/CaRuO3 superlattices. Our experimental investigation unveiled an unexpected asymmetry in the strength of magnetism at these interfaces. Our findings suggest that within the superlattice CaMnO3/CaRuO3, the lower interface (CaRuO3/CaMnO3) exhibits a weaker magnetic moment when compared to the upper interface (CaMnO3/CaRuO3). This observation, supported by XRMR and XAS experimental data, was further clarified by first-principles density functional theory (DFT) calculations. Our calculations suggest that the observed magnetic asymmetry may be linked to the presence of oxygen vacancies at the interfaces. Our study significantly contributes to our understanding of interfacial ferromagnetism, potentially paving the way for controlling and manipulating this emergent property. This may be achieved by utilizing engineered defect states, offering exciting prospects for applications in the field of spintronics devices. / Physics

No description available.

In this dissertation, we used a combination of synchrotron-based x-ray spectroscopic techniques such as angle-resolved photoelectron spectroscopy (ARPES), soft x-ray ARPES, hard x-ray photoelectron spectroscopy (HAXPES), and soft x-ray absorption spectroscopy (XAS) to investigate momentum-resolved and angle-integrated electronic structure of advanced three- and two-dimensional materials and interfaces. The results from the experiments were compared to several types of state-of-the-art first-principles theoretical calculations. In the first part of this dissertation we investigated the effects of spin excitons on the surface states of samarium hexaboride (SmB6), which has gained a lot of interest since it was proposed to be a candidate topological Kondo insulator. Here, we utilized high-resolution (overall resolution of approximately 3 meV) angle-resolved and angle-integrated valence-band photoemission measurements at cryogenic temperatures (1.2 K and 20 K) to show evidence for a V-shap / Physics

Semiconductor nanocrystals are interesting candidates as new light-absorbing materials for photovoltaic (PV) devices. They can be dispersed in solvents and cheaply deposited at low-temperature on various substrates. Also, the nanocrystals have unique optical properties depending on their size due to the quantum size effect and moreover it is easy to uniformly control their stoichiometry. CdTe/CdSe/CdTe heterostructure nanorods and I-III-VI₂ nanocrystals were selected to synthesize and investigate in order to utilize the benefits of colloidal nanocrystals described above. Colloidal nanorods with linear CdTe/CdSe/CdTe heterojunctions were synthesized by sequential reactant injection. After CdTe deposition at the ends of initially formed CdSe nanorods, continued heating in solution leads to Se-Te interdiffusion across the heterojunctions and coalescence to decreased aspect ratio. The Se-Te interdiffusion rates were measured by mapping the composition profile using nanobeam energy dispersive X-ray spectroscopy (EDS). The rate of nanorod coalescence was also measured and compared to model predictions using a continuum viscous flow model. The synthetic method of monodisperse chalcopyrite (tetragonal) CuInSe₂ nanocrystals was also developed. The nanocrystals have trigonal pyramidal shape with one polar and three non-polar surface facets. When drop-cast onto carbon substrates, the nanocrystals self-assemble into close-packed monolayers with triangular (honeycomb) lattice structure. Moreover, the effect of excess Cu precursor (CuCl) was studied for the formation of monodisperse trigonal pyramidal CuInSe₂ nanocrystals. The formation mechanism of monodisperse trigonal pyramidal CuInSe₂ nanocrystals was suggested with regard to excess amount of CuCl precursor, based on the nucleationgrowth model of colloidal nanocrystal formation. A new wurtzite phase of CuInS₂, CuInSe₂, and Cu(InxGa1-x)Se₂ (CIGS) was observed in nanocrystals synthesized by heating metal precursors and Se-(or S-)urea in alkylamine. X-ray diffraction (XRD) showed the predominant phase to be wurtzite (hexagonal) instead of chalcopyrite (tetragonal). High resolution transmission electron microscopy (TEM), however, revealed polytypism in the nanocrystals, with the wurtzite phase interfaced with significant chalcopyrite domains. / text

Submitted by Edisangela Bastos (edisangela@ufpa.br) on 2015-02-24T19:50:10Z No. of bitstreams: 2 license_rdf: 22974 bytes, checksum: 99c771d9f0b9c46790009b9874d49253 (MD5) Tese_SinteseCaracterizacaoMateriais.pdf: 2210675 bytes, checksum: 6fc11a282f06cb1e1f03af4bcfe80df6 (MD5) / Approved for entry into archive by Albirene Aires (albireneufpa@gmail.com) on 2015-02-25T11:56:05Z (GMT) No. of bitstreams: 2 license_rdf: 22974 bytes, checksum: 99c771d9f0b9c46790009b9874d49253 (MD5) Tese_SinteseCaracterizacaoMateriais.pdf: 2210675 bytes, checksum: 6fc11a282f06cb1e1f03af4bcfe80df6 (MD5) / Made available in DSpace on 2015-02-25T11:56:05Z (GMT). No. of bitstreams: 2 license_rdf: 22974 bytes, checksum: 99c771d9f0b9c46790009b9874d49253 (MD5) Tese_SinteseCaracterizacaoMateriais.pdf: 2210675 bytes, checksum: 6fc11a282f06cb1e1f03af4bcfe80df6 (MD5) Previous issue date: 2013 / CNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico / Este estudo avalia o uso de argila do Estado do Acre de natureza esmectítica (argila original) como precursora na síntese de PCHs (Porous Clay Heterostructure) e na organofuncionalização com mercaptopropiltrimetoxisilano (MPTS-Arg) e aplicabilidade desses materiais como adsorventes de fenol, benzeno e tolueno em fase líquida. A síntese de PCHs envolve as seguintes etapas: preparação de organoargila com hexadeciltrimetilamônio (HDTMA-Argila); aumento do espaçamento basal (d001) da organoargila usando o cosurfactante octilamina e adição concomitante de uma fonte de Si, como o tetraetilortosilicato (TEOS); lavagens com etanol em HCl, secagem a 60 o C (PCH-60 A e B); calcinação a 500 o C e 700 º C (PCH 500 A/B e PCH 700), com a remoção do surfatante/co-surfactante e consequente substituição destas substâncias orgânicas por prótons que permanecem nas paredes das galerias de pilares de SiO2 até novo tratamento porventura realizado no PCH. O material MPTS-Arg foi obtido a partir da intercalação de mercaptopropiltrimetoxisilano na argila original sob agitação durante 1 h (Arg-MPTS 1) e na argila original previamente tratada com HCl 1 mol L-1 e sob agitação durante 2 h (Arg-MPOS 2). Os materiais (argila original, HDTMA-Argila, PCH-60, PCH-500/700 e MPTS-Arg) foram caracterizados por difração de raios-X (DRX), microscopia eletrônica de varredura acoplado a espectroscopia de raios X por dispersão de energia (MEV/ EDS), espectroscopia de absorção molecular IV com transformada de Fourier (FTIR), técnicas de análises térmicas (DTA_TG) e análises texturais, como as medidas de área superficial específica (ASEBET, ASELangmuir), volume total de poros (VTP) e diâmetro médio de poros (DMP). Caracterização complementar por ressonância nuclear magnética no estado sólido acoplada a espectrometria de massa (RMN-M AS) foi realizada para o PCH-500 A. Nos experimentos de adsorção de fenol, benzeno e tolueno foram utilizadas suspensões aquosas dos adsorventes contendo separadamente os adsorvatos. As concentrações de equilíbrio de fenol, tolueno e benzeno foram medidas por espectroscopia de absorção molecular na região ultravioleta, conforme método aceito e aplicado em outros estudos de adsorção. Foram obtidos os seguintes resultados: identificação do argilomineral esmectita na argila natural com espaçamento basal de 1,25nm; intercalação do HDTMA e do MPTS com expansão do d(001) para 1,95nm (HDTMA-Arg 5) e 2,1nm (MPTS-Argila 1h). Após a modificação observou-se através da análise de EDS um decréscimo das concentrações dos elementos Na, Si e Al (%) nas posições interlamelares e aumento na concentração de C. O espectro 29Si MAS NMR do PCH-500 A apresentou sinais químicos dos centro Q3 Si(OSi)3OH e Q4 Si(OSi)4 que indicam a formação de sílica em sua estrutura. Os PCHs (60 e 500 A) foram classificados como mesoporosos, apresentando ASEBET entre 417 a 446 m2 g-1 e volume total de poros (cm3 g-1) = 0,367 - 0,369. O aumento da temperatura de calcinação do PCH 500 para 700 o C (PCH 700) propiciou decréscimos em SBET (305 m2 g-1) e diâmetro médio de poros (0.976 nm). Foi verificado a partir da avaliação das medidas dos diâmetro de poros em PCH 700 que 46% das medidas correspondem a microporos. No estudo do equilíbrio de adsorção foram obtidos os valores de KL (L mg-1), KF (L mg-1) e qMax (mg g-1) nos seguintes processos: (i) adsorção de fenol (1.40; 2.26 e 3.80) e tolueno (145, 7.18 e 135) em PCH-500 A; (ii) adsorção de benzeno (0.33, 41.49 e 69.81) em PCH 500 B; (iii) na adsorção de tolueno em argila-MPOS 1 (1.06, 118.9 e 146) e argila-MPOS 2 (2.1, 92 e 97); (iv) na adsorção de fenol (0.07, 0.48 e 4.44) e benzeno (0.11, 4.95 e 35.8) em HDTA-Arg 5, respectivamente. Os dados obtidos sobre a caracterização dos materiais indicaram que a formação dos PCHs propiciou grande aumento nas concentrações de Si e decréscimo nas concentrações de Al, Fe e outros elementos, devido à delaminação- exfoliação da esmectita original. Foi verificado que os materiais são mais adequados para adsorção de tolueno e benzeno do que fenol. / This study evaluates the use of smectite from Acre/Brazil as a precursor in the synthesis of Porous Clay heterostructure and organofunctionalization with mercaptopropyltrimethoxysilane (MPTS-Arg) and applicability of these materials as adsorbents for phenol, benzene and toluene in the liquid phase. The synthesis of PCH involves the following steps: preparation of organoclay with hexadecyltrimethylammonium (HDTMA-clay); it increases the basal spacing (d001) of organoclay using the co-surfactant octylamine and concomitant addition of a source of Si, such as tetraethylorthosilicate (TEOS) , washing with HCl in ethanol and drying at 60 º C (PCH-60 A and B); calcination at 500 ° C and 700 ° C (PCH 500 A /B and PCH 700) by removing the surfactant / co-surfactant and subsequent replacement of these organic substances by protons that remain on the walls of galleries SiO pillars to new treatment perhaps held at PCH. The material MPTS-Arg was obtained from the intercalation of the original clay with mercaptopropiltrimetoxisilano stirring for 1 h (MPTS Arg-1) and the original clay pre-treated with HCl 1 mol L-1 and stirred for 2 h (Arg-MPOS 2).The materials (clay original HDTMA-Clay, PCH-60, Arg-PCH-500/700 and MPTS) were characterized by X-ray diffraction (XRD), scanning electron microscopy coupled to X-ray spectroscopy and energy dispersive (SEM / EDS), molecular absorption spectroscopy with Fourier transform IR (FTIR), thermal analysis techniques (DTA_TG) and textural analyzes, such as specific surface area measurements (ASE BET, ASELangmuir), total pore volume (TPV) and average pore diameter (APD). Additional characterization by nuclear magnetic resonance in solid coupled to mass spectrometry (NMR-MAS) was conducted for the PCH-500 A. In the experiments adsorption of phenol, benzene and toluene were used aqueous suspensions containing adsorbents of the separately adsorbates. The equilibrium concentrations of phenol, toluene and benzene were measured by molecular absorption spectroscopy in the ultraviolet region, as accepted method is applied in other adsorption studies. We obtained the following results: identification of smectite clay minerals in natural clay with basal spacing of 1.25 nm; intercalation of HDTMA and MPTS with expansion of d (001) to 1.95 nm (HDTMA-Arg 5) and 2.1 nm (MPTS Clay-1h). After modification was observed by EDS analysis a decrease of the concentrations of elements Na, Si and Al (%) and the increase in interlayer positions concentration C. The 29Si MAS NMR spectrum of the PCH A-500 showed signs of chemical center Q3 Si (OSi)3OH and Q4 Si(OSi)4 indicate that the formation of silica in its structure. The PCHs (60 and 500 A) were classified as mesoporous, with ASE BET between 417-446 m2 g-1 and total pore volume (cm-3 g-1) = 0.367 to 0.369. Increasing calcination temperature of 500 to 700º C PCH (PCH 700) provided decrease in SBET (305 m2 g-1) and average pore diameter (0976 nm). It was found from the evaluation of the measures of pore diameter at 700 PCH that 46 % of the measurements correspond to micropores. The adsorption process obtained values for KL (mg L-1) , KF (mg L-1) and qmax (mg g-1) in the following cases : (i) adsorption of phenol (1.40, 2.26 and 3.80) and toluene (145, 18.7 and 135) in the PCH- 500 , (ii) adsorption of benzene (0.33 , 41.49 and 69.81) in PCH 500 B (iii) in toluene adsorption MPTS-Argila 1h (1.06 , 118.9 and 146) and MPTSArgila 2h (2.1 , 92 and 97) , (iv) adsorption of phenol (0.07, 4.44 and 12.48 ) and benzene (12.11, 4.95 and 35.8) in HDTMA-Arg 5, respectively. The data on the characterization of the materials indicated that the formation of PCH caused a large increase in the concentrations of Si and decrease in the concentrations of Al, Fe and other elements due to delamination - exfoliation of smectite original. It was verified that the materials are most suitable for the adsorption of toluene and benzene to phenol.