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京都大学 / 新制・課程博士 / 博士(エネルギー科学) / 甲第24116号 / エネ博第449号 / 新制||エネ||84(附属図書館) / 京都大学大学院エネルギー科学研究科エネルギー応用科学専攻 / (主査)教授 大垣 英明, 教授 松田 一成, 教授 宮内 雄平 / 学位規則第4条第1項該当 / Doctor of Energy Science / Kyoto University / DFAM

Orientador: Luis Vicente de Andrade Scalvi / Resumo: A proposta deste trabalho é a investigação e compreensão de propriedades ópticas e eletrônicas da heteroestrutura formada pelo semicondutor III-V GaAs e o semicondutor óxido SnO2. A deposição de filmes finos de GaAs é feita por evaporação resistiva, e a de filmes finos de SnO2 dopados com o íon terra-rara Eu3+ pelo processo sol-gel-dip-coating, combinando um material semicondutor com alta mobilidade eletrônica e transição direta (GaAs), com semicondutor de bandgap largo (SnO2) e condutividade naturalmente do tipo-n, onde a emissão de Eu3+ é bastante eficiente. Amostras desses dois materiais foram investigadas preliminarmente de forma separada, como filmes finos, ou pós de SnO2:Eu prensados na forma de pastilhas. Fotoluminescência foi medida em heteroestruturas GaAs/SnO2:2%Eu com tratamentos térmicos em baixa temperatura (200 e 400°C), enquanto filmes de SnO2:2%Eu isolados apenas apresentaram picos de emissão do Eu3+ quando tratados com temperatura elevada (1000°C), porém com baixa intensidade. A hipótese para esse fenômeno foi associada com aglomerados de Eu3+ na superfície das amostras. Medidas de XAFS têm possibilitado o estudo da incorporação do dopante Eu na matriz SnO2, e na compreensão do mecanismo da luminescência encontrada. Análises de XANES mostraram que o átomo de európio permanece no estado de oxidação trivalente após a síntese da solução e tratamentos térmicos feitos, e que a heteroestrutura apresenta menos distorção na rede e estrutura mais ordenada quando compa... (Resumo completo, clicar acesso eletrônico abaixo) / Abstract: The purpose of this work is the investigation and comprehension of optical and electronic properties of the heterostructure, formed by the III-V semiconductor GaAs and the oxide semiconductor SnO2. The deposition of GaAs thin films is accomplished by the resistive evaporation technique, and thin films of SnO2, doped with the rare earth ion Eu3+, by the sol-gel-dip-coating process, combining a semiconductor material with high electronic mobility (GaAs), with a wide bandgap semiconductor (SnO2) which is naturally n-type, where Eu3+ emission is quite efficient. Samples of these two materials were initially investigated separately, as thin films, or SnO2:Eu powders pressed into pellets. Photoluminescence was measured in GaAs/SnO2:2%Eu heterostructures with thermal annealing at low temperature (200 and 400°C), while SnO2:2%Eu films showed Eu3+ emission peaks only when treated with higher temperature (1000°C), but with low intensity. The hypothesis for this phenomenon was associated with Eu3+ agglomerates on the sample surfaces. XAFS measurements have allowed the study of the incorporation of the Eu doping in the SnO2 matrix, and in the understanding of the mechanism of luminescence found. Analysis of XANES showed that the europium atom remains in the trivalent oxidation state after the synthesis of the solution and thermal annealing done, and that the GaAs/SnO2:2%Eu heterostructure presents less distortion in the lattice and more ordered structure when compared to films of SnO2:2%... (Complete abstract click electronic access below) / Doutor

This thesis explores the application of two-dimensional (2D) materials such as graphene and single layer hexagonal boron nitride (h-BN) which are produced by liquid phase exfoliation for use in printed electronics and energy composite applications. In Chapter 2 I give a broad overview of the electrical, mechanical and optical properties of 2D materials among other nanomaterials that were used in the thesis such as carbon nanotubes and conductive polymers. Additionally I review the techniques and theory behind the exfoliation and dispersion of functional layered materials. In Chapter 3 I present the coating and printing techniques which were used in this thesis along with the experimental techniques and methods which I use to characterise my inks, films and devices. Chapter 4 is the first experimental chapter of the thesis and demonstrates the printing of 2D material heterostructures to create fully printed dieletrically gated field effect transistors with 2D materials on textile and polymer substrates. In this chapter I also demonstrate reprogrammable volatile memory, p and n type inverters, complementary inverters, and logic gates which pave the way to fully printed integrated circuits, operational at room temperature and pressure with 2D materials processed in liquid. In Chapter 5, I review spray coating (a highly industrial scalable printing technique), in terms of the optimisation of its parameters to achieve thin films of nanomaterials on three-dimensional (3D) surfaces. I then demonstrate that it is possible to create large area (∼750 cm2) transparent conducting films around curved surfaces with spray coating enabling a semi-transparent (around 360°) spherical touch sensor for interactive devices. Chapter 6 explores printed photonics for applications in terahertz (THz) frequencies. Here I demonstrate the feasibility of liquid phase exfoliated graphene to create THz saturable absorbers (SAs) which could enable many applications in THz frequencies such as tomography or time-resolved spectroscopy that require mode-locked (i.e. enabling a train of short pulses to be derived from continuous-wave operation) THz pulses. I also demonstrate that these SAs can be inkjet printed on demand providing unprecedented compactness in a quantum cascade laser system. Finally in Chapter 7, I look at the application of graphene in microbial fuel cells (MFC). I demonstrate that enhanced MFC output arises from the interplay of the improved surface area, enhanced conductivity, and catalytic surface groups of a graphene based electrode. As a final step graphene based anodes and cathodes which were entirely platinum free were combined to create an environmentally sustainable energy source.

This thesis presents several experiments, generally aiming at visualising the ballistic and topological transport on the high-mobility graphene/boron nitride heterostructure using the scanning gate microscope. For the first experiment, we use the scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and in a weak perpendicular magnetic field. We employ a magnetic focusing transport configuration to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local potential generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector. For the second experiment, we investigate the graphene van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride which exhibit a moiré superlattice that is expected to break sublattice symmetry. However, despite an energy gap of several tens of millielectronvolts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states are likely to play a role in this behaviour, their precise nature is still unclear in the community. We therefore perform a scanning gate microscopy study of graphene moiré superlattice devices with comparable activation energy but with different charge disorder levels. In the device with higher charge impurity ($\sim$ 10$^-$ cm$^{-2}$) and lower resistivity ($\sim$ 10 k$\Omega$) at the Dirac point we observe scanning gate response along the graphene edges. Combined with simulations, our measurements suggest that enhanced edge doping is responsible for this effect. In addition, a device with low charge impurity ($\sim$ 10$^{9}$ cm$^{-2}$) and higher resistivity ($\sim$ 100 k$\Omega$) shows subgap states in the bulk. Our measurements provide alternative model to the prevailing theory in the literature in which the topological bandstructures of the graphene moiré superlattices entail an edge currents shunting the insulating bulk. In the third experiment, we continue our study in the graphene moir$\acute e$ superlattices with the newly reported non-local Hall signals at the main Dirac point. It has been associated with the non-zero valley Berry curvature due to the gap opening and the nonlocal signal has been interpreted as the signature of the topological valley Hall effects. However, the nature of such signal is still disputed in the community, due to the vanishing density of states near the Dirac point and the possible topological edge transport in the system. Various artificial contribution without a topological origin of the measurement scheme has also been suggested. In connection to the second experiment, we use the scanning gate microscope to image the non-local Hall resistance as well as the local resistance in the current path. By analysing the features in the two sets of images, we find evidence for topological Hall current in the bulk despite a large artificial components which cannot be distinguished in global transport measurement. In the last experiment, we show the development of a radio-frequency scanning impedance microscopy compatible with the existing scanning gate microscopy and the dilution refrigerator. We detailed the design and the implementation of the radio-frequency reflectometry and the specialised tip holder for the integration of the tip and the transmission lines. We demonstrate the capability of imaging local impedance of the sample by detecting the mechanical oscillation of the tip, the device topography, and the Landau levels in the quantum Hall regime at liquid helium temperature and milli-Kelvin temperature.

Elektronentomographie erlaubt die dreidimensionale (3D) Charakterisierung von Kristalldefekten auf der Nanometerskala. Die Anwendung in der Forschung an epitaktischen Halbleiterheterostrukturen ist bisher nicht durchgesetzt worden, obwohl kleiner werdende Bauteile mit zunehmend dreidimensionaler Struktur entsprechende Untersuchungen verlangen, um die Beziehung von Struktur und physikalischen Eigenschaften in entsprechenden Materialsystemen zu verstehen. Die vorliegende Arbeit demonstriert die konsequente Anwendung der Elektronentomographie auf eine III-Sb basierte Laser- und eine 3D (In,Ga)N/GaN Nanosäulenheterostruktur. Die unerlässliche Zielpräparation von Proben mittels FIB-SEM-Zweistrahlmikroskops wird herausgestellt. Die kontrollierte Orientierung der Probe während der Präparation und die sorfältige Auswahl eines Abbildungsverfahrens im STEM werden detailliert beschrieben. Die umfassende räumliche Mikrostrukturanalyse einer antimonidbasierten Schichtstruktur folgt der Dimensionalität von Kristalldefekten. Die Facettierung und Lage einer Pore (3D Defekt), deren Auftreten in der MBE gewachsenen GaSb-Schicht untypisch ist, werden bestimmt. Das Zusammenspiel von anfänglich abgeschiedenen AlSb-Inseln auf dem Si-Substrat, der Ausbildung eines Fehlversetzungsnetzwerkes an der Grenzfläche der Heterostruktur (2D Defekt) und dem Auftreten von Durchstoßversetzungen wird mit Hilfe der Kombination tomographischer und komplementärer TEM-/STEM-Ergebnisse untersucht. Die räumliche Anordnung von Versetzungen (1D Defekte), die das ganze Schichtsystem durchziehen, wird mit Elektronentomographie offenbart. Die Wechselwirkung dieser Versetzungen mit Antiphasengrenzen und anderen Liniendefekten sind ein einzigartiges Ergebnis der Elektronentomographie. Abschließend sind Unterschiede im Indiumgehalt und in der Schichtdicke von (In,Ga)N-Einschlüssen auf verschiedenen Facetten schief aufgewachsener GaN-Nanosäulen einmalig per Elektronentomographie herausgearbeitet worden. / Electron tomography exhibits a very poor spread in the research field of epitaxial semiconductor heterostructures in spite of the ongoing miniaturization and increasing three-dimensional (3D) character of nano-structured devices. This necessitates a tomographic approach at the nanometre scale in order to characterize and understand the relation between structure and physical properties of respective material systems. The present work demonstrates the rigorous application of electron tomography to an III-Sb based laser and to an (In,Ga)N/GaN nanocolumn heterostructure. A specific target preparation using a versatile FIB-SEM dual-beam microscope is emphasized as indispensable. The purposeful orientation of the specimen during preparation and the careful selection of an imaging mode in the scanning-/transmission electron microscope (S/TEM) are regarded in great detail. The comprehensive spatial microstructure characterization of the antimonide based heterostructure follows the dimensionality of crystal defects. The facetting and position of a pore (3D defect) which is unexpected in the MBE grown GaSb layer, is determined. The interplay of the initially grown AlSb islands on Si, the formation of a misfit dislocation network at the heterostructure interface (2D defect) and the presence of threading dislocations is investigated by the correlation of tomographic and complementary S/TEM results. The spatial arrangement of dislocations (1D defects) penetrating the whole stack of antimonide layers is revealed by electron tomography. The interaction of these line defects with anti-phase boundaries and with other dislocations is exclusively observed in the 3D result. The insertion of (In,Ga)N into oblique GaN nanocolumns is uniquely accessed by electron tomography. The amount of incorporated indium and the (In,Ga)N layer thickness is shown to vary on the different facets of the GaN core.

No description available.

The 2-dimensional semiconductor family of materials called transition metal dichalcogenides (2d-TMDs) offers many technological advantages: low power consumption, atomically-precise interfaces, lack of nuclear spins and ease of functional integration with other 2d materials are just a few. In this work we harness the potential of these materials as a platform for quantum devices: develop a method by which we can deterministically create single-photon emitting sites in 2d-TMDs, in large-scale arrays. These we call quantum dots (QDs): quantum confinement potentials within semiconductor materials which can trap single-excitons. The single excitons recombine radiatively to emit single-photons. Single-photon sources are a crucial requirement for many quantum information technology (QIT) applications such as quantum cryptography and quantum communication. The QDs are formed by placing the flakes over substrates nano-patterned with protru- sions which induce local strain and provoke the quantum confinement of excitons at low temperatures. This method has been successfully tested in several TMD materials, hence achieving quantum light at different wavelengths. We present one of the very few systems where quantum confinement sites have been shown to be deterministically engineered in a scalable way. Moreover, we have demonstrated how the 2d-based QDs can be embedded within 2d- heterostructures to form functional quantum devices: we have used TMD monolayers along with other 2d-materials - graphene and hexagonal boron nitride - to create quan- tum light-emitting diodes that produce electrically-driven single-photons. Again, very few single-photon sources can be triggered electrically, and this provides a great ad- vantage when considering on-chip quantum technologies. Finally, we present experimental steps towards using our architecture as quantum bits: capturing single-spins inside the QDs, using field-effect type 2d-heterostructures. We are able to controllably charge the QDs with single-electrons and single-holes – a key breakthrough towards the use of spin and valley pseudospin of confined carriers in 2d-materials as a new kind of optically addressable matter qubit. This work presents the successful marriage of 2d-semiconductor technology with QIT, paving the way for 2-dimensional materials as platforms for scalable, on-chip quantum photonics.

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No. of bitstreams: 1 TeseOFL.pdf: 5276658 bytes, checksum: fa1530974731a8e33b62043b4c524afb (MD5) Previous issue date: 2016-08-29 / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Semiconductors employed as photocatalysts that can be activated by visible irradiation have attracted intense scientific interest due to their applications in heterogeneous photocatalysis. BiVO4 is a semiconductor with band gap value of 2.4 eV; however, this material exhibits poor photocatalytic activity mainly due to the rapid recombination of electron/hole pair. An efficient strategy to overcome this challenge is through the formation of type-II heterostructures. Based on this overview, this work aimed at: (i) developing methods to obtain heterostructures composed of BiVO4 and different bismuth compounds (t-BiVO4, Bi2O3 e Bi2O2CO3), (ii) to evaluate the effect of heterojunction formation on photocatalytic properties, and (iii) to study the mechanisms of charge transfer and organic pollutants degradation. Initially, this work investigated the synthesis of BiVO4 by oxidant peroxide method, and it was observed that the main reason for the poor photoactivity of BiVO4 is its inability to reduce O2 to O2 •-. In order to overcome this challenge, we attempted to obtain heterostructures between monoclinic BiVO4 and tetragonal BiVO4 phases (m-BiVO4/t-BiVO4) by oxidant peroxide method. It was verified that m-BiVO4/t-BiVO4 heterostructures exhibited better photocatalytic performance in the degradation of methylene blue (MB) dye than their isolated phases, under visible irradiation. HRTEM images revealed that the heterostructured sample was composed of nanoparticles with average size of 10 nm, the m-BiVO4/t-BiVO4 interface was also evidenced. The mechanisms of charge transfer between the phases and organic pollutant oxidation were proposed in agreement with the obtained results by XPS, mass spectroscopy and TOC analysis. Holes (h+), superoxide anion (O2 -•) and hydroxyl radicals (•OH) were the primary active species responsible for MB photodegradation. The increase of m-BiVO4/t-BiVO4 heterostructure photoactivity occurred due to the formation of a suitable heterojunction, promoting the effective separation of photogenerated charges. However, this method presented difficulties in the control of heterostructure morphology and composition, because it is based on a simultaneous two-phase crystallization process. Therefore, we developed a novel strategy for heterostructure tailoring driven by solubility difference of two semiconductors that possess at least one metal in common. For this, the formation of heterojunctions by BiVO4 growth on Bi2O3 or Bi2O2CO3 self-sacrificial surface was evaluated. For the Bi2O3/BiVO4 heterostructures, the amount of xiv heterojunctions formed between Bi2O3 and BiVO4 was tuned by synthesis process variables (temperature and V concentration) and the particle size of preformed Bi2O3 (i.e. solubility difference). The heterojunctions were evidenced by HRTEM images, where the growth of BiVO4 nanoparticles on Bi2O3 or Bi2O2CO3 surface was observed. Time resolved photoluminescence and XPS results confirmed that the formation of type-II heterostructure led to increase of charge carriers lifetime. The proposed synthesis strategy showed efficiency in obtaining Bi2O3/BiVO4 and Bi2O2CO3/BiVO4 heterostructures with controlled morphology and composition that improved photoactivity when compared to their isolated phases. / Semicondutores que podem ser ativados sob radiação visível são de grande interesse para processos fotocatalíticos. O BiVO4 é um semicondutor com valor de band-gap de 2,4 eV, no entanto, este apresenta uma baixa atividade fotocatalítica, devido principalmente à rápida recombinação do par elétron/buraco. Uma estratégia eficiente para superar este desafio é pela formação de heteroestruturas do tipo-II. Diante deste panorama, este trabalho teve por objetivo: (i) desenvolver métodos para obter heteroestruturas de BiVO4 com diferentes compostos de bismuto (t-BiVO4, Bi2O3 e Bi2O2CO3), (ii) avaliar o efeito das heterojunções nas propriedades fotocatalíticas, e (iii) estudar os mecanismos de transferência de carga e de degradação de poluentes orgânicos. Inicialmente, este trabalho lidou com a síntese do BiVO4 pelo método de oxidação por peróxido e observou-se que a principal razão para baixa atividade fotocatalítica do BiVO4 é sua incapacidade de reduzir o O2 em O2 •-. Com o objetivo de superar este desafio, buscou-se a obtenção de heterostruturas de BiVO4 nas fases monoclínica e tetragonal (m- BiVO4/t-BiVO4), pelo método de oxidação por peróxido. Foi verificado que a heteroestrutura m-BiVO4/t-BiVO4 exibiu uma melhor performance fotocatalítica na degradação do corante azul de metileno (AM) do que as suas fases isoladas, sob radiação visível. As imagens de microscopia eletrônica de transmissão de alta resolução (HRTEM) revelaram que a amostra heteroestruturada é composta de nanopartículas com tamanho médio de 10 nm, a interface m-BiVO4/t-BiVO4 também foi evidenciada. Foram propostos mecanismos de transferência de cargas entre as fases e de oxidação do poluente orgânico de acordo com os resultado obtidos pelas técnicas de XPS, espectrometria de massas e análise de TOC. Os buracos (h+), radicais superóxidos (O2 -•) e hidroxila (•OH) foram as principais espécies ativas responsáveis na fotodegradação do AM. O aumento da fotoatividade da heteroestrutura m-BiVO4/t-BiVO4 ocorreu devido a formação de uma heterojunção adequada, que promove a separação efetiva das cargas foto-geradas. No entanto, este método apresentou dificuldade no controle morfológico e da composição da heteroestruturas por ser um processo de cristalização simultânea das fases, portanto, foi desenvolvido uma nova estratégia para a produção de heteroestruturas dirigido pela diferença de solubilidade entre dois semicondutores que possuem ao menos um metal em comum. Para tal, a formação de heterojunções pelo crescimento do BiVO4 na superfície xii de sacrifício do Bi2O3 ou Bi2O2CO3 pré-formados foi avaliada. Para a heteroestrutura Bi2O3/BiVO4 foi observado que a quantidade de junções formadas foi dependente da solubilidade do precursor que foi variado pelo tamanho de partícula do Bi2O3. As heterojunções foram evidenciadas por imagens de HRTEM, onde foi observado a formação de nanopartículas do BiVO4 na superfície das fases de Bi2O3 e Bi2O2CO3. Os espectros de fotoluminescência e de XPS confirmaram que a formação da heteroestrutura do tipo-II conduziu ao aumento do tempo de vida dos portadores de carga. Esta estratégia de síntese proposta mostrou-se eficiente, já que foi possível obter heteroestruturas de Bi2O3/BiVO4 e Bi2O2CO3/BiVO4 com controle de morfologia e composição, que resultou no aumento da fotoatividade quando comparado as fases isoladas. / FAPESP: 13/13888-0