Thesis (Ph.D.)--McMaster University (Canada), 1987. / Source: Dissertation Abstracts International, Volume: 49-07, Section: B, page: 2799. Supervisors: D. A. Thompson; W. W. Smeltzer; J. A. Davies.

Thesis (Ph. D.)--University of Sydney, 2004. / Title from title screen (viewed 5 May 2008). Submitted in fulfilment of the requirements for the degree of Doctor of Philosophy to the School of Physics, Faculty of Science. Degree awarded 2004; thesis submitted 2003. Includes bibliographical references. Also available in print form.

Thesis--University of California, Berkeley, 1959. / "Chemistry-General" -t.p. Includes bibliographical references (p. 75-79).

La technique Storing Matter a pour objectif d’améliorer la sensibilité et la quantification des analyses par SIMS. Elle consiste à découpler la phase de pulvérisation de l’échantillon de la phase d’analyse. Pour cela, la matière pulvérisée par bombardement ionique est déposée en sous-monocouche sur un collecteur optimisé. Le dépôt est ensuite analysé par SIMS. La probabilité d’ionisation de la matière ne dépend plus de son environnement initial (“effet de matrice”), mais de la surface du collecteur. Le choix du collecteur permet un gain de sensibilité et la quantification des concentrations de l’échantillon initial. L’efficacité de la technique dépend du choix du collecteur et d’un facteur de collection ? caractérisant la phase de pulvérisation-dépôt. Dans ce travail, nous avons étudié la pulvérisation et l’émission de la matière sous bombardement ionique pour optimiser ce facteur ?. Nous avons mis au point un dispositif expérimental ainsi qu’un protocole d’analyse par SIMS qui nous a permis d’étudier la distribution angulaire sous un bombardement d’ions Cs+ avec une incidence oblique pour différents paramètres d’impact. L’étude menée sur quatre cibles (Si, Ge, InP et GaAs) a montré que la distribution angulaire est de forme cosn (?-?Max) pour une énergie et un angle d’impact de respectivement 2 à 10 keV et 30° à 60°. L’exposant n est ~2 tandis que la direction d’émission préférentielle ?Max varie de la normale à la surface (0°) jusqu’à un angle d’émission de 35° dans la direction spéculaire au faisceau en fonction de l’énergie d’impact et de l’angle d’incidence. Ces résultats appliqués à Storing Matter ont permis de déterminer la configuration optimum pour une collection maîtrisée en fonction du bombardement / The Storing Matter technique aims at optimising the sensitivity and quantitativeness of SIMS analysis. It consists in decoupling the sputtering of the specimen from the subsequent analysis step. The specimen is sputtered by means of an ion beam. The emitted particles are deposited at a sub-monolayer level on an optimised collector. The deposit is subsequently analysed in a SIMS instrument. The ionisation probability in SIMS does not depend anymore on the initial sample composition (“Matrix effect”), but on the collector surface chemistry. The collector is chosen in order to increase the sensitivity and to quantify the specimen. The efficiency of this new technique depends on the collector choice and on the collection factor ? characterising the sputter-deposition step. In this work, the sputtering and emission processes under ionic bombardment have been studied in order to optimise this factor ?. We developed an experimental set-up and an analysis protocol based on SIMS that allows us to study the angular distribution under Cs+ bombardment with an oblique incidence for different impact parameters. Four targets (Si, Ge, InP and GaAs) were studied. The results show that the angular distribution is shaped as a cosine function cosn (?-?Max) for impact energies between 2 and 10 keV and for incidence angles from 30 to 60°. Under these conditions, the exponent n is ~2 and the preferential direction of emission ?Max varies from the normal to the surface to 35° in the specular direction in function of the impact energy and the incidence angle. The results allowed to find the best settings for the Storing Matter technique to control the sputtered matter collection in function of the bombardment parameters

The purpose of this research is to accurately match the calculation environment, i.e. the treatment planning system (TPS) with the measurement environment (using a 2-D diode array) for lung Stereotactic Body Radiation Therapy (SBRT) patient-specific quality assurance (QA). Furthermore, a new phantom was studied in which the 2-D array and heterogeneities were incorporated into the patient-specific QA process for lung SBRT. Dual source dual energy computerized tomography (DSCT) and single energy computerized tomography (SECT) were used to model phantoms incorporating a 2-D diode array into the TPS. A water-equivalent and a heterogeneous phantom (simulating the thoracic region of a patient) were studied. Monte Carlo and pencil beam dose distributions were compared to the measured distributions. Composite and individual fields were analyzed for normally incident and planned gantry angle deliveries. The distributions were compared using γ-analysis for criteria 3% 3mm, 2% 2mm, and 1% 1mm. The Monte Carlo calculations for the DSCT modeled phantoms (incorporating the array) showed an increase in the passing percentage magnitude for 46.4 % of the fields at 3% 3mm, 85.7% at 2% 2mm, and 92.9% at 1% 1mm. The Monte Carlo calculations gave no agreement for the same γ-analysis criteria using the SECT. Pencil beam calculations resulted in lower passing percentages when the diode array was incorporated in the TPS. The DSCT modeled phantoms (incorporating the array) exhibited decrease in the passing percentage magnitude for 85.7% of the fields at 3% 3mm, 82.1% at 2% 2mm, and 71.4% at 1% 1mm. In SECT modeled phantoms (incorporating the array), a decrease in passing percentage magnitude were found for 92.9% of the fields at 3% 3mm, 89.3% at 2% 2mm, and 82.1% at 1% 1mm. In conclusion, this study demonstrates that including the diode array in the TPS results in increased passing percentages when using a DSCT system with a Monte Carlo algorithm for patient-specific lung SBRT QA. Furthermore, as recommended by task groups (e.g. TG 65, TG 101, TG 244) of the American Association of Physicists in Medicine (AAPM), pencil beam algorithms should be avoided in the presence of heterogeneous materials, including a diode array. / Includes bibliography. / Dissertation (Ph.D.)--Florida Atlantic University, 2016. / FAU Electronic Theses and Dissertations Collection

Monte Carlo (MC) and Pencil Beam (PB) calculations are compared to their measured planar dose distributions using a 2-D diode array for lung Stereotactic Body Radiation Therapy (SBRT). The planar dose distributions were studied for two different phantom types: an in-house heterogeneous phantom and a homogeneous phantom. The motivation is to mimic the human anatomy during a lung SBRT treatment and incorporate heterogeneities into the pre-treatment Quality Assurance process, where measured and calculated planar dose distributions are compared before the radiation treatment. Individual and combined field dosimetry has been performed for both fixed gantry angle (anterior to posterior) and planned gantry angle delivery. A gamma analysis has been performed for all beam arrangements. The measurements were obtained using the 2-D diode array MapCHECK 2™. / Includes bibliography. / Thesis (M.S.)--Florida Atlantic University, 2015. / FAU Electronic Theses and Dissertations Collection

Submitted by FELIPE AUGUSTO DARRIBA BATTAGLIN null (darriba@bol.com.br) on 2016-08-17T23:44:40Z No. of bitstreams: 1 DIS_MEST2016_BATTAGLIN FELIPE.pdf: 6951544 bytes, checksum: 2d13cd64aaec5226e6031c18795aaca7 (MD5) / Approved for entry into archive by Ana Paula Grisoto (grisotoana@reitoria.unesp.br) on 2016-08-19T18:47:28Z (GMT) No. of bitstreams: 1 battaglin_fad_me_soro.pdf: 6951544 bytes, checksum: 2d13cd64aaec5226e6031c18795aaca7 (MD5) / Made available in DSpace on 2016-08-19T18:47:28Z (GMT). No. of bitstreams: 1 battaglin_fad_me_soro.pdf: 6951544 bytes, checksum: 2d13cd64aaec5226e6031c18795aaca7 (MD5) Previous issue date: 2016-07-06 / Filmes de alumina foram depositados a partir de uma nova metodologia de deposição a plasma, utilizando o pó de acetilacetonato de alumínio (AAA) como precursor. Em trabalho prévio do grupo, foi demonstrada a viabilidade do sputtering do AAA em plasmas de argônio para deposição de filmes finos. Os bons resultados obtidos estimularam o desenvolvimento do presente trabalho, visando o aperfeiçoamento da metodologia de deposição. Para isso, primeiramente foram investigados os efeitos da alteração da composição química da atmosfera do plasma, por meio da incorporação de diferentes proporções de oxigênio (O2%) ao argônio, tornando o processo um sputtering reativo. As deposições foram realizadas espalhando-se o pó do AAA no eletrodo inferior de um sistema de plasma acoplado capacitivamente. Argônio, oxigênio ou a mistura de ambos foram admitidos até a pressão de 11,0 Pa. O plasma foi gerado pela aplicação de sinal de radiofrequência (13,56 MHz, 150 W) ao eletrodo contendo o pó, mantendo-se o eletrodo superior, também utilizado como porta-amostras, aterrado. O tempo de deposição foi de 90 minutos. Investigou-se o efeito da O2%, variada de 0 a 100%, nas propriedades dos filmes. Na etapa subsequente, filmes foram depositados por sputtering reativo utilizando-se a condição considerada ótima na última etapa do trabalho (O2% = 25%) e mantendo-se as condições de pressão, potência e tempo de tratamento constantes. Todavia, ao invés de aterrar o porta-amostras, pulsos retangulares negativos (600 V, 2 kHz, 1-100% de ciclo de trabalho) foram aplicados, promovendo bombardeamento iônico durante a deposição por sputtering reativo. O efeito do ciclo de trabalho dos pulsos nas propriedades dos filmes foi avaliado. Na última etapa do trabalho, filmes foram depositados pelo sputtering reativo a partir de atmosferas contendo 25% de O2 e 75% de Ar e em condições mais energéticas que as utilizadas nos ciclos anteriores. Para tal um primeiro conjunto de amostras foi preparado mediante aquecimento resistivo do porta-amostras (410ºC) em plasma de menor pressão (4,0 Pa) que a anteriormente utilizada. O tempo de deposição foi de 28 minutos. Um segundo conjunto de amostras foi preparado associando-se bombardeamento iônico de mais alta energia, pela aplicação de pulsos de 1200 V (20% ciclo de trabalho) ao porta-amostras e também reduzindo a pressão da atmosfera de deposição para 4,0 Pa. Nesta condição, o tempo de deposição foi de 60 minutos. Comparou-se os resultados obtidos nestes experimentos aos equivalentes obtidos anteriormente. A espessura da camada foi obtida por meio de um perfilômetro e a taxa de deposição pela razão entre espessura e tempo de deposição. A composição elementar e a estrutura molecular dos filmes foram investigadas através das técnicas de espectroscopia de retroespalhamento Rutherford e de absorção no infravermelho, respectivamente. Difração de raios X foi utilizada para investigar a microestrutura dos filmes. Inspeções na morfologia e composição química das superfícies foram conduzidas associando microscopia eletrônica de varredura e espectroscopia de energia dispersiva. A rugosidade foi derivada de perfis topográficos adquiridos por perfilometria e microscopia de força atômica, enquanto a molhabilidade da superfície foi determinada através da técnica de gota séssil. De forma geral, os filmes depositados apresentaram contribuições de grupos orgânicos e de inorgânicos relacionados à alumina amorfa. O aumento da O2% afetou a cinética do plasma, proporcionando alterações na taxa de deposição (1 a 25 nm/min), rugosidade (1 a 13 nm) e redução na concentração de carbono proveniente do precursor, de 43% (O2% = 0%) para 6% (O2% = 100%). Com o aumento na O2% também foram encontradas variações na densidade dos filmes, dentro da faixa de 0,7 a 1,9 g/cm³, e tendência de queda no ângulo de contato de 53 para 17°. Por sua vez, quando o bombardeamento iônico é associado ao processo de deposição, altera-se a taxa de crescimento dos filmes (3 a 29 nm/min) e a morfologia da superfície, por meio do alívio de tensões internas e aumento da estabilidade física da estrutura resultante. A composição química não sofreu alterações, devido as condições do sputtering reativo permanecerem inalteradas nas deposições. Já a rugosidade e a molhabilidade da superfície apresentaram comportamentos condizentes com os resultados da morfologia e topografia. Quando condições mais energéticas de deposição foram empregadas, filmes óxidos com contaminações orgânicas foram obtidos para a deposição que empregou aquecimento resistivo do porta-amostras. Nesta condição, devido a redução na pressão total, mesmo com o aquecimento resistivo a taxa de deposição foi maior (~ 6 vezes) que aquela obtida sem aquecimento. Para a situação em que bombardeamento iônico de alta energia foi utilizado, estrutura e composição química similares ao do composto precursor foram obtidas. Os resultados são interpretados em termos dos processos predominantes em cada uma das metodologias empregadas. / Alumina films were deposited by a new plasma deposition method using aluminum acetylacetonate (AAA) powder as precursor. In a previous study by our group, the feasibility of AAA sputtering in argon plasmas for thin films deposition was demonstrated. The good results obtained stimulated the development of this work, aiming at the improvement of the deposition methodology. For this, the effects of modifications in the chemical composition of the plasma atmosphere were first investigated, through the use of different oxygen to argon proportions (O2%), making the process a reactive sputtering. The depositions were performed by spreading the AAA powder on the lower electrode of a capacitively coupled plasma system. Argon, oxygen or a mixture of both were admitted up to a pressure of 11.0 Pa. Application of radiofrequency power (13.56 MHz, 150 W) to the powder covered electrode generated the plasma, keeping the upper electrode, also used as a sample holder, grounded. Deposition times of 90 minutes were used. The effects of varying the oxygen proportion from 0 to 100%, on the film properties were studied. In the subsequent stage, films were deposited by reactive sputtering using the condition considered best in the last stage of the work (O2% = 25%) and keeping the pressures, power and treatment time constant. Instead of grounding the sample holder, however, negative rectangular pulses (600 V, 2 kHz, 1-100% duty cycle) were applied, promoting ion bombardment during the deposition by reactive sputtering. The influence of the pulse duty cycle on the properties of the films was evaluated. In the last study stage, films were deposited by reactive sputtering from atmospheres containing 25% O2 and 75% Ar and with more energetic conditions than those used in previous cycles. For such, a first samples set was prepared by resistive heating of the sample holder (410ºC) in a lower plasma pressure (4.0 Pa) than that previously used. The deposition time was 28 minutes. A second samples set was carried out associating ion bombardment of the highest energy, by the application of the 1200 V pulses (20% duty cycle) to the sample holder and also reducing the pressure of the deposition atmosphere to 4.0 Pa. In this condition, the deposition time was 60 minutes. The results obtained in these experiments were compared to the equivalent obtained previously. Film thickness was obtained by profilometry and the deposition rate calculated as the ratio between the thickness and deposition time. Elemental composition and molecular structure of the films were investigated using Rutherford backscattering and infrared absorption spectroscopy, respectively. X-ray diffraction was used to investigate the microstructure of the films. Surface morphology and chemical composition were studied using scanning electron microscopy and energy dispersive spectroscopy. Roughness was derived from topographic profiles acquired by profilometry and atomic force microscopy, whereas the surface wettability was determined using the sessile drop technique. In general, the deposited films showed contributions from organic and inorganic groups related to amorphous alumina. Increasing in O2% affected the plasma kinetics, providing changes in deposition rate (1 to 25 nm/min), roughness (1 to 13 nm) and reduction in the carbon concentration coming from the precursor, 43% (O2% = 0%) to 6% (O2% = 100%). With the increase in O2% it was also found variations in the films density, within the range from 0.7 to 1.9 g/cm³, and a downward trend in the contact angle of 53 to 17°. In turn, when the ion bombardment is associated with the deposition process, changes are found in the deposition rate (3 to 29 nm/min) and the surface morphology, through the internal strains relief and increased in the physical stability of resulting structure. The chemical composition did not suffer changes because the conditions of the reactive sputtering remain unchanged in the depositions. The roughness and surface wettability showed behavior consistent with the morphology and topography results. When more energetic conditions were employed, oxide films with organic contaminations were obtained for the deposition which applied the sample holder resistive heating. In this condition, due to the reduction in the total pressure, even with the resistive heating the deposition rate was higher (~ 6 times) than that obtained without heating. For the situation which high-energy ion bombardment was used, the structure and chemical composition similar to the precursor were obtained. The results are interpreted in terms of the prevailing processes in each of the methodologies applied.

No description available.

Dünne Schichten aus hydrogenisiertem amorphem Silizium a-Si:H spielen für die Photovoltaik eine wichtige Rolle. Einerseits kommt für die Dünnschicht-Photovoltaik unterschiedlich dotiertes a-Si:H in den Schichten einer p-i-n-Solarzelle zur Anwendung, andererseits stellen Heterokontakt-Solarzellen aus amorphem und kristallinem Silizium (a-Si:H/c-Si) wegen ihres hohen Wirkungsgrades derzeit ein sehr aktuelles Forschungsthema dar. Die Abscheidung der a-Si:H-Schichten im Rahmen dieser Arbeit erfolgt mit der Methode des Magnetronsputterns (Kathodenzerstäubung). Dieses für die in-line-Beschichtung etablierte Verfahren wird speziell für die Photovoltaik noch nicht in industriellem Maßstab eingesetzt (lediglich für transparente leitfähige Oxide TCO). Insbesondere existiert nur eine geringe Zahl von Veröffentlichungen zu Heterokontakten, welche mittels Magnetronsputtern hergestellt wurden. Ein Schwerpunkt der vorliegenden Arbeit ist daher die Herstellung sowie Charakterisierung solcher Heterokontakte unter dem Aspekt variierter Abscheide- und Prozessparameter (Substrattemperatur, Wasserstoffflussrate, Ionenbeschuss). Das für das Sputtern erforderliche Plasma wird mit einer im Mittelfrequenzbereich gepulsten Gleichspannung angeregt. Ein dadurch mehr oder weniger ausgeprägter Ionenbeschuss der wachsenden Schichten in Abhängigkeit der Pulsparameter wird hier analysiert. Die Charakterisierung der Heterokontakte erfolgt hauptsächlich anhand deren Strom-Spannung-Kennlinien, welche auch bei variierter Temperatur gemessen werden. Erzielte Gleichrichtungsverhältnisse um 10000:1 sowie Diodenidealitätsfaktoren η ≈ 1,3 kennzeichnen (p)a-Si:H/(n)c-Si-Heterokontakte mit den besten halbleiterphysikalischen Eigenschaften. Bei zu schwacher Schichthydrogenisierung wurde ein Ladungstransportmechanismus nachgewiesen, welcher in der Literatur als multi-tunneling capture-emission MTCE bekannt ist. Eine erhöhte Hydrogenisierung unterdrückt diesen Mechanismus nahezu vollständig. Durch Abscheidung unterschiedlich stark bordotierter a-Si:H-Schichten wird außerdem die Dotiereffizienz beurteilt. Hohe Werte sind bei amorphen Halbleitern im Allgemeinen schwer zu erreichen. Die mit stärkerer Dotierung erhöhte Gleichrichterwirkung lieferte hier ein Indiz für eine nachweisbare Dotiereffizienz.

Poptávka ze strany vesmírného výzkumu, zdravotnictví a bezpečnostního průmyslu způsobila v posledních letech zvýšený zájem o vývoj materiálů pro detekci a zobrazování vysokoenergetického záření. CdTe a jeho slitina CdZnTe. jsou polovodiče umožnují detekci záření o energiích v rozsahu 10 keV až 500 keV. Šířka zakázaného pásma u CdTe / CdZnTe je 1.46 -1.6 eV, což umožňuje produkci krystalů o vysoké rezistivitě (10^10-10^11 cm), která je dostačující pro použití CdTe / CdZnTe při pokojové teplotě. V mé práci byly zkoumány detektory CdTe/CdZnTe v různých stádiích jejich poruchovosti. Byly použity velmi kvalitní spektroskopické detektory, materiál s nižší rezistivitou a výraznou polarizací, detektory s asymetrií elektrických parametrů kontaktů a teplotně degenerované vzorky. Z výsledků analýzy nízkofrekvenčního šumu je patrný obecný závěr, že zvýšená koncentrace defektů způsobí změnu povahy původně monotónního spektra typu 1/f na spektrum s výrazným vlivem generačně-rekombinačních procesů. Další výrazná vlastnost degenerovaných detektorů a detektorů nižší kvality je nárůst spektrální hustoty šumu typu 1/f se vzrůstajícím napájecím napětí se směrnicí výrazně vyšší než 2. Strukturální a chemické analýzy poukázaly, že teplotní generace detektorů způsobuje difuzi kovu použitého při kontaktování a stopových prvků hlouběji do objemu krystalu. Část mé práce je věnována modifikaci povrchu svazkem argonových iontů a jejímu vlivu na chemické složení a morfologii povrchu.