This thesis focuses mainly on the techniques to achieve high-performance top-emitting OLEDs, regarding device efficiency and lifetime for both non-inverted and inverted structures. It is thus organized as follows: In Chapter 2, the basic physics of organic semiconductor materials are reviewed, including the electronic properties of organic semiconductor materials, molecular excitations and their electronic transitions etc., which are believed to be critical for understanding of the work. Then, the general device physics of OLEDs are reviewed in detail, which includes almost every important electrical and optical process involved in the device. Finally, techniques and methods used to improve the device performance are summarized, which includes electrical doping of charge carrier transport layers. In Chapter 3, all organic materials, experimental techniques, and characterization methods used in this study are briefly described. In the following Chapter 4, techniques that are used for device optimization of non-inverted top-emitting OLEDs are discussed. Also, the mechanism of light outcoupling enhancement by a capping layer is discussed there. In the last part of Chapter 4, the influence of the optical device structure on the intrinsic quantum yield of the emitters is studied. Chapter 5 is focused on inverted top-emitting OLEDs, which are believed to be better applicable with current mainstream n-type amorphous silicon thin film transistor (TFT) technology. In this Chapter, the organic/metal and metal/organic interfaces are investigated in detail and their influence on device performance is discussed. In Chapter 6, the degradation of top-emitting OLEDs is studied, with a focus on the influence of electrode material and electrode thickness on the lifetime of top-emitting devices.

III-Nitride semiconductor materials have garnered significant attention among researchers due to their diverse applications stemming from their remarkable electrical and optical properties. This present thesis encompasses theoretical investigations conducted on InAlN and AlGaN for the purpose of designing light-emitting diodes (LEDs), along with experimental characterization experiments on BGaN thin films. The primary objective of this research is to delve deeply into the optoelectronic applications of InAlN and analyze the current state of BGaN. Theoretical studies were carried out on InAlN-based deep-ultraviolet (DUV) LEDs, with a particular focus on elucidating the polarization properties exhibited by this material when combined with AlGaN. Additionally, an estimation of the band alignment of this system was included, taking into account the available reported data. The intention behind this work is to underscore the importance of designing novel optoelectronic devices that incorporate ternary-to-ternary heterointerfaces. However, it is crucial to carefully consider both the advantages and disadvantages of such interfaces in terms of carrier injection efficiency and radiative efficiency. The experimental section of this thesis entailed the fabrication and characterization of BGaN thin films. A comprehensive understanding and development of this material are essential, as boron-alloys have garnered attention due to their unique properties. Nevertheless, there have been reports of epitaxial complications and theoretical limits associated with these alloys. In this section, we present the characteristics of the first conductive memory-effect-obtained p-type BGaN, doped with magnesium. Although the characterization of the reported samples includes techniques such as HRXRD, AFM, SEM, Hall, CTLM, SIMS, and CL, it is important to note that a more profound fundamental study is still underway. The relevance of this work can be summarized into two key aspects: Firstly, it provides valuable insights and descriptions of novel heterojunctions for ultraviolet LEDs from a physics perspective. Secondly, it contributes to material advancements in the pursuit of developing new ternary-alloys, offering a material science perspective.

The present work aims at enhancing the external quantum efficiencies of ultra-violet (UV) sensitive photodetectors (PDs) and light emitting diodes (LEDs)for any light polarization. Deep UV solid state devices are made out of AlGaN or MgZnO and their performances suffer from the high resistivity of their p-doped regions. They require transparent p-contacts; yet the most commonly used transparent contacts have low transmission in the UV: indium tin oxide (ITO) and nickel-gold (Ni/Au 5/5 nms) transmit less than 50% and 30% respectively at 300 nm. Here we investigate the use of surface plasmons (SPs) to design transparent p-contacts for AlGaN devices in the deep UV region of the spectrum. The appeal of using surface plasmon coupling arose from the local electromagnetic field enhancement near the metal surface as well as the increase in interaction time between the field and semiconductor if placed on top of a semiconductor. An in/out-coupling mechanism is achieved by using a grating consisting of two perpendicularly oriented sets of parallel aluminum lines with periods as low as 250 nm. The incident light is first coupled into SPs at the air/aluminum interface which then re-radiate at the aluminum/AlGaN interface and the photons energy is transferred to SP polaritons (SPPs) and back to photons. High transmission can be achieved not only at normal incidence but for a wider range of incident angles. iv A finite difference time domain (FDTD) package from R-Soft was used to simulate and design such aluminum gratings with transparency as high as 100% with tunable peak wavelength, bandwidth and angular acceptance. A rigorous coupled wave analysis (RCWA) was developed in Matlab to validate the FDTD results. The high UV transparency meshes were then fabricated using an e-beam assisted lithography lift-off process. Their electrical and optical properties were investigated. The electrical characterization was very encouraging; the sheet resistances of these meshes were lower than those of the conventionally used transparent contacts. The optical transmissions were lower than expected and the causes for the lower measurements have been investigated. The aluminum oxidation, the large metal grain size and the line edge roughness were identified as the main factors of inconsistency and solutions are proposed to improve these shortcomings. The effect of aluminum oxidation was calculated and the passivation of aluminum with SiO2 was evaluated as a solution. A cold deposition of aluminum reduced the aluminum grain size from 60 nm to 20 nm and the roughness from 5 nm to 0.5 nm. Furthermore, replacing the conventional lift-off process by a dry back-etch process led to much smoother metal line edges and much high optical transparency. The optical measurements were consistent with the simulations. Therefore, reduced roughness and smooth metal line edges were found to be especially critical considerations for deep UV application of the meshes.

The thesis is focused on the study of electric and dielectric properties of thin film organic materials that can be used as an active layer of photovoltaic cells. Primarily were studied the properties of the layers on the glass substrates, which consist of a thin active layer of phthalocyanines. On the samples were first measured current-voltage characteristics (in the dark and during the exposure) and the basic parameters of the photovoltaic conversion were determined. Finally were measured frequency dependencies (impedance spectra, in the dark and during the exposure) and the parameters of a model of the structure with organic semiconductor were determined. The obtained results will be used to optimize the properties of photovoltaic cells.

O uso crescente de dispositivos móveis e o advento da Internet das Coisas têm demandado esforços para prover alternativas de comunicação sem fio. A utilização de sistemas óticos para a transmissão de dados apresenta-se como uma tecnologia promissora e complementar à comunicação por radiofrequência, especialmente devido aos desenvolvimentos consideráveis na tecnologia de iluminação por estado sólido e sua adoção em vários domínios. Os diodos de emissão de luz podem ser utilizados na promoção de comunicação por luz visível em ambientes internos e externos. Nos ambientes externos há inúmeras oportunidades a serem exploradas no que concerne aos Sistemas Inteligentes de Transporte, visto que os diodos de emissão de luz têm sido utilizados em luminárias públicas, semáforos e veículos. Esta pesquisa propôs o desenvolvimento e a avaliação de um sistema de comunicação por luz visível entre elementos da infraestrutura urbana e veículos, mais especificamente, luminárias públicas baseadas em diodos de emissão de luz e o modal de transporte público representado pelos ônibus que circulam em faixas exclusivas. A metodologia foi composta por simulação computacional e pela construção de um protótipo para auxiliar na validação das soluções propostas. O sistema complementar de comunicação sem fio por meio da luz proposto fornece pode fornecer subsídios à determinação do posicionamento preciso dos ônibus, suprindo as deficiências do sistema GPS em locais menos favoráveis à recepção de seus sinais em uma cidade. Essas informações auxiliam os usuários e os gestores do transporte público, atendendo alguns domínios de serviço em Sistemas Inteligentes de Transporte, de acordo com a norma ISO 14813. Os resultados obtidos nos testes com o protótipo, bem como, aqueles observados na simulação, comprovaram a viabilidade do sistema proposto, com o estabelecimento da comunicação entre luminária e ônibus, inclusive quando trafegando a 60 km/h. / The increasing use of mobile devices and the advent of the Internet of Things have called for efforts to provide alternatives for wireless communication. The use of optical systems for data transmission is a promising and complementary technology to radiofrequency communication, especially due to the considerable developments in solidstate lighting technology and its adoption in various domains. Light-emitting diodes can be used to promote visible light communication in indoor and outdoor environments. In outdoor environments there are numerous opportunities to be explored with regard to Intelligent Transport Systems, since light-emitting diodes have been used in public luminaires, traffic lights and vehicles. This research proposed the development and evaluation of a visible light communication system between elements of the urban infrastructure and vehicles, more specifically, public luminaires based on light-emitting diodes and the mode of public transport represented by buses that circulate in exclusive lanes. The methodology was composed by computational simulation and the construction of a prototype, to assist in the validation of the proposed solutions. The proposed complementary wireless communication system through light provides subsidies to determine the precise positioning of buses, supplying deficiencies of the GPS system in places less favorable to the reception of their signals in a city. This information helps the users and the managers of the public transport, attending some service domains in Intelligent Transport Systems, according to the ISO 14813 standard. The results obtained in the tests with the prototype, as well as those observed in the simulation, proved the feasibility of the proposed system, with the establishment of communication between luminaire and bus, even when traveling at 60 km/h.

O uso crescente de dispositivos móveis e o advento da Internet das Coisas têm demandado esforços para prover alternativas de comunicação sem fio. A utilização de sistemas óticos para a transmissão de dados apresenta-se como uma tecnologia promissora e complementar à comunicação por radiofrequência, especialmente devido aos desenvolvimentos consideráveis na tecnologia de iluminação por estado sólido e sua adoção em vários domínios. Os diodos de emissão de luz podem ser utilizados na promoção de comunicação por luz visível em ambientes internos e externos. Nos ambientes externos há inúmeras oportunidades a serem exploradas no que concerne aos Sistemas Inteligentes de Transporte, visto que os diodos de emissão de luz têm sido utilizados em luminárias públicas, semáforos e veículos. Esta pesquisa propôs o desenvolvimento e a avaliação de um sistema de comunicação por luz visível entre elementos da infraestrutura urbana e veículos, mais especificamente, luminárias públicas baseadas em diodos de emissão de luz e o modal de transporte público representado pelos ônibus que circulam em faixas exclusivas. A metodologia foi composta por simulação computacional e pela construção de um protótipo para auxiliar na validação das soluções propostas. O sistema complementar de comunicação sem fio por meio da luz proposto fornece pode fornecer subsídios à determinação do posicionamento preciso dos ônibus, suprindo as deficiências do sistema GPS em locais menos favoráveis à recepção de seus sinais em uma cidade. Essas informações auxiliam os usuários e os gestores do transporte público, atendendo alguns domínios de serviço em Sistemas Inteligentes de Transporte, de acordo com a norma ISO 14813. Os resultados obtidos nos testes com o protótipo, bem como, aqueles observados na simulação, comprovaram a viabilidade do sistema proposto, com o estabelecimento da comunicação entre luminária e ônibus, inclusive quando trafegando a 60 km/h. / The increasing use of mobile devices and the advent of the Internet of Things have called for efforts to provide alternatives for wireless communication. The use of optical systems for data transmission is a promising and complementary technology to radiofrequency communication, especially due to the considerable developments in solidstate lighting technology and its adoption in various domains. Light-emitting diodes can be used to promote visible light communication in indoor and outdoor environments. In outdoor environments there are numerous opportunities to be explored with regard to Intelligent Transport Systems, since light-emitting diodes have been used in public luminaires, traffic lights and vehicles. This research proposed the development and evaluation of a visible light communication system between elements of the urban infrastructure and vehicles, more specifically, public luminaires based on light-emitting diodes and the mode of public transport represented by buses that circulate in exclusive lanes. The methodology was composed by computational simulation and the construction of a prototype, to assist in the validation of the proposed solutions. The proposed complementary wireless communication system through light provides subsidies to determine the precise positioning of buses, supplying deficiencies of the GPS system in places less favorable to the reception of their signals in a city. This information helps the users and the managers of the public transport, attending some service domains in Intelligent Transport Systems, according to the ISO 14813 standard. The results obtained in the tests with the prototype, as well as those observed in the simulation, proved the feasibility of the proposed system, with the establishment of communication between luminaire and bus, even when traveling at 60 km/h.

Single self-assembled semiconductor quantum dots (QDs) are able to emit single-photons and entangled-photons pairs. They are therefore considered as potential candidate building blocks for quantum information processing (QIP) and communication. To exploit them fully, the ability to precisely control their optical properties is needed due to several reasons. For example, the stochastic nature of their growth ends up with only little probability of finding any two or more QDs emitting indistinguishable photons. These are required for two-photon quantum interference (partial Bell-state measurement), which lies at the heart of linear optics QIP. Also, most of the as-grown QDs do not fulfil the symmetries required for generation of entangled-photon pairs. Additionally, tuning is required to establish completely new systems, for example, 87Rb atomic-vapors based hybrid semiconductoratomic (HSA) interface or QDs with significant heavy-hole (HH)-light-hole (LH) mixings. The former paves a way towards quantum memories and the latter makes the optical control of hole spins much easier required for spin- based QIP. This work focuses on the optical properties of a new type of QDs optimized for HSA experiments and their broadband tuning using strain. It was created by integrating the membranes, containing QDs, onto relaxor-ferroelectric actuators and was quantified with a spatial resolution of ~1 µm by combining measurements of the µ-photoluminescence of the regions surrounding the QDs and dedicated modeling. The emission of a neutral exciton confined in a QD usually consists of two fine-structure-split lines which are linearly polarized along orthogonal directions. In our QDs we tune the emission energies as large as ~23meV and the fine-structure-splitting by more than 90 µeV. For the first time, we demonstrate that strain is able to tune the angle between the polarization direction of these two lines up to 40° due to increased strain-induced HH-LH mixings up to ~55%. Compared to other quantum emitters, QDs can be easily integrated into optoelectronic devices, which enable, for example, the generation of non-classical light under electrical injection. A novel method to create sub-micrometer sized current-channels to efficiently feed charge carriers into single QDs is presented in this thesis. It is based on focused-laserbeam assisted thermal diffusion of manganese interstitial ions from the top GaMnAs layer into the underlying layer of resonant tunneling diode structures. The combination of the two methods investigated in this thesis may lead to new QDbased devices, where direct laser writing is employed to preselect QDs by creating localized current-channels and strain is used to fine tune their optical properties to match the demanding requirements imposed by QIP concepts.

This work demonstrates an approach to develop low-cost, semi-transparent, long-term stable, and efficient organic photovoltaic (OPV) cells and organic light-emitting diodes (OLEDs) using various alternative electrodes such as conductive polymers, doped ZnO, and carbon nanotubes. Such electrodes are regarded as good candidates to replace the conventional indium tin oxide (ITO) electrode, which is expensive, brittle, and limiting the manufacturing of low-cost, flexible organic devices. First, we report long-term stable, efficient ITO-free OPV cells and transparent OLEDs based on poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) electrodes by using a solvent post-treatment or a structure optimization. In addition, a high performance internal light out-coupling system for white OLEDs based on PEDOT:PSS-coated metal oxide nanostructures is developed. Next, we demonstrate highly efficient ITO-free OPV cells and OLEDs with optimized ZnO electrodes doped with alternative non-metallic elements. The organic devices based on the optimized ZnO electrodes show significantly improved efficiencies compared to devices with standard ITO. Finally, we report semi-transparent OPV cells with free-standing carbon nanotube sheets as transparent top electrodes. The resulting OPV cells exhibit very low leakage currents with good long-term stability. In addition, the combination of various kinds of bottom and top electrodes for semi-transparent and ITO-free OPV cells is investigated. These results demonstrate that alternative electrodes-based OPV cells and OLEDs have a promising future for practical applications in efficient, low-cost, flexible and semi-transparent device manufacturing. / Die vorliegende Arbeit demonstriert einen Ansatz zur Verwirklichung von kostengünstigen, semi-transparenten, langzeitstabilen und effizienten Organischen Photovoltaik Zellen (OPV) und Organischen Leuchtdioden (OLEDs) durch die Nutzung innovativer Elektrodensysteme. Dazu werden leitfähige Polymere, dotiertes ZnO und Kohlenstoff-Nanoröhrchen eingesetzt. Diese alternativen Elektrodensysteme sind vielversprechende Kandidaten, um das konventionell genutzte Indium-Zinn-Oxid (ITO), welches aufgrund seines hohen Preises und spröden Materialverhaltens einen stark begrenz Faktor bei der Herstellung von kostengünstigen, flexiblen, organischen Bauelementen darstellt, zu ersetzten. Zunächst werden langzeitstabile, effiziente, ITO-freie Solarzellen und transparente OLEDs auf der Basis von Poly(3,4-ethylene-dioxythiophene):Poly(styrenesulfonate) (PEDOT:PSS) Elektroden beschrieben, welche mit Hilfe einer Lösungsmittel-Nachprozessierung und einer Optimierung der Bauelementstruktur hergestellt wurden. Zusätzlich wurde ein leistungsfähiges, internes Lichtauskopplungs-System für weiße OLEDs, basierend auf PEDOT:PSS-beschichteten Metalloxid-Nanostrukturen, entwickelt. Weiterhin werden hoch effiziente, ITO-freie OPV Zellen und OLEDs vorgestellt, bei denen mit verschiedenen nicht-metallischen Elementen dotierte ZnO Elektroden zur Anwendung kamen. Die optimierten ZnO Elektroden bieten im Vergleich zu unserem Laborstandard ITO eine signifikant verbesserte Effizienz. Abschließend werden semi-transparente OPV Zellen mit freistehenden Kohlenstoff-Nanoröhrchen als transparente Top-Elektrode vorgestellt. Die daraus resultierenden Zellen zeigen sehr niedrige Leckströme und eine zufriedenstellende Stabilität. In diesem Zusammenhang wurde auch verschiedene Kombinationen von Elektrodenmaterialen als Top- und Bottom-Elektrode für semi-transparente, ITO-freie OPV Zellen untersucht. Zusammengefasst bestätigen die Resultate, dass OPV und OLEDs basierend auf alternativen Elektroden vielversprechende Eigenschaften für die praktische Anwendung in der Herstellung von effizienten, kostengünstigen, flexiblen und semi-transparenten Bauelement besitzen.

Photo-induced charge transfer which occurs between molecules or different parts of a large molecule is the pivotal process related to performances of organic electronics. In particular, injection of charge carriers into conjugated polymers and dissociation of photo-generated excitons at the heterojunction between a donor and acceptor system are of great importance in determining the luminescence efficiency of organic light emitting diodes (OLEDs) and solar energy conversion efficiency of organic solar cells, respectively. However, the complex nature of organic semiconductors as well as complicated primary processes involved in the functioning of these devices have prevented us from understanding unique characteristics of these processes and thereby engineering better materials for higher performances. In this dissertation, two different types of photo-induced (or -related) charge transfer processes occurring in organic semiconductors were investigated by using single molecule spectroscopy (SMS) techniques to unravel the complexities of these processes. The carefully designed functioning capacitor-like model devices similar to OLEDs and photovoltaic cells were fabricated where isolated single nanoparticles were introduced as an active medium to mitigate the complexities of these materials. We observed that injection of positively charged carriers (holes) into poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) single nanoparticles from the carbazole hole transport layer does not occur in the absence of light. We denoted the observed hole injection in aid of light as the light-induced hole transfer mechanism (LIHT). It was revealed that the charging dynamics are highly consistent with a cooperative charging effect. In addition, the LIHT was proposed as the possible source for the formation of deep trapped hole in organic devices. Local exciton dissociation yields across a nanostructured domain between poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) single nanoparticles and either poly(9,9- dioctylfluorene - co - bis-N,N- (4 -butylphenyl)-bis-N,N-phenyl-1,4-phenylene diamine) (PFB) or poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) (TFB) film in model photovoltaic devices was also investigated. A wide distribution of exciton dissociation yields was observed from each nanodomain due to the device geometry. The observed hysteresis in fluorescence voltage curve was ascribed to accumulated charges following charge separations. The dynamics of charge separation under the applied electric field was described in more detail. / text

Maleimide based highly luminescent material Cbz-MI with donor acceptor donor (D-A-D) backbone has been synthesized and characterized. An organic light emitting diode fabricated using this material as emitting layer exhibited EQE of 2.5% in the yellow region of visible spectrum. Due to the small energy gap of materials emitting in this region of spectrum, EQE of OLED is usually limited by various non-radiative decays and high EQE of OLED using this material proves that most of the nonradiative decay pathways have been avoided by the careful design of molecule and device structure. Although Cbz-MI did not show TADF properties, but if tailored with right electron donor along with maleimide as an acceptor, such derivatives may exhibit TADF properties