Cílem této práce je popsat současný stav v oblasti mikrovlnných komponent na bázi textilu a poté také autorův příspěvek k výzkumu. V tomto studijním oboru je třeba řešit mnoho problémů, a proto jsou stanoveny velmi konkrétní cíle, které by měly tvořit kompletní komunikační systém, který by byl snadno integrovatelný do čalounění uvnitř letadla nebo jiného vozidla. První kapitola je zaměřena na použití relativně nízkofrekvenčních obvodů v pásmu UHF a vysokofrekvenční sklízení energie. Po simulacích následují praktická měření. Další kapitola charakterizuje nové 3D pletené textilie a jejich vysokofrekveční vlastnosti a modelování na velmi vysokých frekvencích, které jsou žádoucí pro užití jako komunikační kanály. S prakticky ověřeným a numericky popsaným textilním substrátem pro použití v pásmu SHF je představena nový vlnovod integrovaný do textilu na bázi tisknutelného umělého magnetického vodiče s praktickou metodikou návrhu. Po ověření byl vlnovod použit pro základní dělič výkonu, dvě různé antény a dva typy senzorů. Všechny návrhy byly vyrobeny a testovány s uspokojivými výsledky.

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This thesis concerns the study, development and analysis of innovative artificial intelligence (AI)-driven optimization techniques within the System-by-Design (SbD) framework aimed at efficiently addressing the computational complexity inherent in advanced electromagnetic (EM) problems. By leveraging the available a-priori information as well as the proper integration of machine learning (ML) techniques with intelligent exploration strategies, the SbD paradigm enables the effective and reliable solution of the EM problem at hand, with user-defined performance and in a reasonable amount of time. The flexibility of the AI-driven SbD framework is demonstrated in practice with the implementation of two solution strategies to address the fully non-linear inverse scattering problem (ISP) for the detection and imaging of buried objects in ground penetrating radar (GPR)-based applications, and to address the design and optimization of mm-wave automotive radars that comply multiple challenging and contrasting requirements. A comprehensive set of numerical experiments is reported to demonstrate the efficacy and computational efficiency of the SbD-based optimization techniques in solving complex EM problems.

[ES] Esta tesis aborda temas de especial interés en el diseño de antenas en la banda de milimétricas. Hui en dia, implementar components passius per a operar en la banda de mil·limètriques i assegurar el contacte i l'alineament metàl·lic apropiat entre peces, resulta un desafiament complex. Habitualment les línies de transmissió i les guies d'ones metàl·liques són les solucions adoptades, però en el primer cas es presenten pèrdues al ser solucions impreses i en el segon cas un mal contacte metàl·lic comporta fugues de camp. Per tant, s'estan explorant nous conceptes que solucionen estos problemes. La tecnología Gap Waveguide (GW) resulta adecuada ya que no requiere de contactos metálicos. En los últimos años han surgido las agrupaciones de antenas basadas en la tecnología Gap Waveguide y son un candidato prometedor para satisfacer algunas de las necesidades mencionadas. La tecnología GW ha demostrado ser atractiva para dispositivos de milimétricas porque permite redes de distribución completamente metálicas de una manera más simple que las guías de onda convencionales. Por tanto, estas redes tienen muy bajas pérdidas pero además son simples de fabricar. Esto es posible gracias a la capacidad de las GW de confinar de forma segura la propagación de ondas electromagnéticas por medio de una estructura que no requiere de contacto. Durante la última década, se han hecho avances importantes en la tecnología GW y en la literatura se pueden encontrar un buen número de antenas basadas en GW. Esta tesis va un paso más allá en la contribución de este tipo de antenas. Aquí, no solo se presentan antenas con polarización lineal, como suelen ser las desarrolladas hasta ahora, sino también con polarización dual, circular y duales en banda. Estas aportaciones son especialmente atractivas dentro del campo de las comunicaciones por satélite en movimiento (SATCOM on-the-move). Además, se han explorado nuevas redes de distribución que permiten antenas planas más compactas, más ligeras. / [CA] Esta tesi aborda temes d'especial interés en el disseny d'antenes en la banda de mil.limètriques. Hui en dia, implementar components passius per a operar en longituds d'onda tan xicotetes (de l'orde de mil.límetres) i assegurar el contacte i l'alineament metàl-lic apropiat entre peces, resulta un desafiament complex. Habitualment les línies de transmissió i les guia d'ones metàl.liques són les solucions adoptades, però en el primer cas es presenten pèrdues al ser solucions impreses i en el segon cas un mal contacte metàl.lic comporta fugues de camp. Per tant, s'estan explorant nous conceptes que solucionen estos problemes. La tecnologia Gap Waveguide (GW) resulta adequada ja que no requerix de contactes metàl.lics. En els últims anys han sorgit les agrupacions d'antena basades en la tecnologia Gap Waveguide i són un candidat prometedor per a satisfer algunes de les necessitats mencionades. La tecnologia GW ha demostrat ser atractiva per a dispositius de banda d'ones mil-limètriques perquè permet xarxes de distribució completament metàl-liques d'una manera més simple que les guies d'onda convencionals. Per tant estes xarxes tenen baixes pèrdues peró, a més, són simples de fabricar. Açò és possible gràcies a la capacitat de les GW de confinar de forma segura la propagació d'ones electromagnètiques per mitjà d'una estructura que no requerix de contacte. Durant l'última dècada, s'han fet avanços importants en la tecnologia GW i en la literatura es poden trobar un bon nombre d'antenes basades en GW. Esta tesi va un pas més enllà en la contribució d'este tipus d'antenes. Ací, no sols es presenten antenes amb polarització lineal com solen ser les desenrotllades fins ara, sinó també antenes amb polarització dual, circular i inclús antenes duals en banda. Estes aportacions són especialment atractives dins del camp de les comunicacions per satèl.lit en moviment (SATCOM on-the-move). A més també s'han explorat noves xarxes de distribució que permeten obtindre antenes planes més compactes, més lleugeres. / [EN] This thesis deals with topics of special interest regarding the design of antennas at the mm-wave band. Today, implementing passive components that operate in the mm-wave band and to ensure the appropriate metallic contact is challenging. Commonly, conventional planar transmission lines and hollow metallic waveguides are the usual solutions but they present high losses or they do not ensure a good metallic contact. So, new concepts must be explored. Gap Waveguides (GWs), result suitably since they do not require metallic contact for shielding. Antenna arrays in Gap Waveguide Technology (GW) emerges as one promising candidate to naturally meet some of the mentioned needs. GW technology has demonstrated to be effective for mm-wave band devices because it enables full-metal distribution networks in a much simpler way than conventional waveguides. Very low distribution losses can be achieved preserving at the same time the assembly simplicity of multilayer microstrip feeding networks. This unique feature is a consequence of gap waveguides ability to safely confine the electromagnetic wave propagation through a contactless structure. During the last decade, there have been important advances in GW technology and a good number of gap waveguide-based arrays can be found in the literature. This thesis goes a step further in the contribution to mm-wave gap waveguide antennas. Here, antennas with linear polarization as well as circular or dual polarization are proposed. Dual band antennas has also been explored. These contributions have been carried out with a focus on satellite communications on-the-move. In addition, new distribution networks have also been explored to obtain more compact, low-profile and lighter antennas. / Ferrando Rocher, M. (2018). Gap Waveguide Array Antennas and Corporate-Feed Networks for mm-Wave band Applications [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/115933

Ce travail de recherche a été principalement motivé par les avantages importants apportés par la technologie UTBB FDSOI aux applications analogiques et RF de faible puissance. L'objectif principal est d'étudier le comportement dynamique du transistor MOSFET du type UTBB FDSOI et de proposer des modèles prédictifs et des recommandations pour la conception de circuits intégrés RF, en mettant un accent particulier sur le régime d'inversion modérée. Après une brève analyse des progrès réalisés au niveau des architectures du transistor MOSFET, un état de l’art de la modélisation du transistor MOSFET UTBB FDSOI est établi. Les principaux effets physiques impliqués dans le transistor à double grille avec une épaisseur du film de 7 nm sont passés en revue, en particulier l’impact de la grille arrière, à l’aide de mesures et de simulations TCAD. La caractéristique gm/ID en basse fréquence et la caractéristique ym/ID proposée pour la haute fréquence sont étudiées et utilisées dans une conception analogique efficace. Enfin, le modèle NQS haute fréquence proposé reproduit les mesures dans toutes les conditions de polarisation y compris l’inversion modérée jusqu’à 110 GHz. / This research work has been motivated primarily by the significant advantages brought about by the UTBB FDSOI technology to the Low power Analog and RF applications. The main goal is to study the dynamic behavior of the UTBB FDSOI MOSFET in light of the recent technology advances and to propose predictive models and useful recommendations for RF IC design with particular emphasis on Moderate Inversion regime. After a brief review of progress in MOSFET architectures introduced in the semiconductor industry, a state-of-the-art UTBB FDSOI MOSFET modeling status is compiled. The main physical effects involved in the double gate transistor with a 7 nm thick film are reviewed, particularly the back gate impact, using measurements and TCAD. For better insight into the Weak Inversion and Moderate Inversion operations, both the low frequency gm/ID FoM and the proposed high frequency ym/ID FoM are studied and also used in an efficient first-cut analog design. Finally, a high frequency NQS model is developed and compared to DC and S-parameters measurements. The results show excellent agreement across all modes of operation including very low bias conditions and up to 110 GHz.

"2009" / Thesis (MSc (Hons))--Macquarie University, Faculty of Science, Dept. of Physics and Engineering, 2010. / Bibliography: p. 163-166. / Introduction -- Design theory and process technology -- 15GHz oscillator implementations -- 24GHz oscillator implementation -- Frequency prescaler implementation -- MMIC fabrication and measurement -- Conclusion. / Advances in Silicon Germanium (SiGe) Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) technology has caused a recent revolution in low-cost Monolithic Microwave Integrated Circuit (MMIC) design. -- This thesis presents the design, fabrication and measurement of four MMICs for frequency synthesis, manufactured in a commercially available IBM 0.18μm SiGe BiCMOS technology with ft = 60GHz. The high speed and low-cost features of SiGe Heterojunction Bipolar Transistors (HBTs) were exploited to successfully develop two single-ended injection-lockable 15GHz Voltage Controlled Oscillators (VCOs) for application in an active Ka-Band antenna beam-forming network, and a 24GHz differential cross-coupled VCO and 1/6 synchronous static frequency prescaler for emerging Ultra Wideband (UWB) automotive Short Range Radar (SRR) applications. -- On-wafer measurement techniques were used to precisely characterise the performance of each circuit and compare against expected simulation results and state-of-the-art performance reported in the literature. -- The original contributions of this thesis include the application of negative resistance theory to single-ended and differential SiGe VCO design at 15-24GHz, consideration of manufacturing process variation on 24GHz VCO and prescaler performance, implementation of a fully static multi-stage synchronous divider topology at 24GHz and the use of differential on-wafer measurement techniques. -- Finally, this thesis has llustrated the excellent practicability of SiGe BiCMOS technology in the engineering of high performance, low-cost MMICs for frequency synthesis in millimeterwave (mm-wave) devices. / Mode of access: World Wide Web. / xxii, 166 p. : ill (some col.)

A 5 GHz continuous unlicensed bandwidth is available at millimeter-wave (mm-wave) frequencies around 60 GHz and offers the prospect for multi gigabit wireless applications. The inherent atmospheric attenuation at 60 GHz due to oxygen absorption makes the frequency range ideal for short distance communication networks. For these mm-wave wireless networks, the low noise amplifier (LNA) is a critical subsystem determining the receiver performance i.e., the noise figure (NF) and receiver sensitivity. It however proves challenging to realise high performance mm-wave LNAs in a silicon (Si) complementary metal-oxide semiconductor (CMOS) technology. The mm-wave passive devices, specifically on-chip inductors, experience high propagation loss due to the conductivity of the Si substrate at mm-wave frequencies, degrading the performance of the LNA and subsequently the performance of the receiver architecture. The research is aimed at realising a high performance mm-wave LNA in a Si BiCMOS technology. The focal points are firstly, the fundamental understanding of the various forms of losses passive inductors experience and the techniques to address these issues, and secondly, whether the performance of mm-wave passive inductors can be improved by means of geometry optimising. An associated hypothesis is formulated, where the research outcome results in a preferred passive inductor and formulates an optimised passive inductor for mm-wave applications. The performance of the mm-wave inductor is evaluated using the quality factor (Q-factor) as a figure of merit. An increased inductor Q-factor translates to improved LNA input and output matching performance and contributes to the lowering of the LNA NF. The passive inductors are designed and simulated in a 2.5D electromagnetic (EM) simulator. The electrical characteristics of the passive structures are exported to a SPICE netlist which is included in a circuit simulator to evaluate and investigate the LNA performance. Two LNAs are designed and prototyped using the 13μ-m SiGe BiCMOS process from IBM as part of the experimental process to validate the hypothesis. One LNA implements the preferred inductor structures as a benchmark, while the second LNA, identical to the first, replaces one inductor with the optimised inductor. Experimental verification allows complete characterization of the passive inductors and the performance of the LNAs to prove the hypothesis. According to the author's knowledge, the slow-wave coplanar waveguide (S-CPW) achieves a higher Q-factor than microstrip and coplanar waveguide (CPW) transmission lines at mm-wave frequencies implemented for the 130 nm SiGe BiCMOS technology node. In literature, specific S-CPW transmission line geometry parameters have previously been investigated, but this work optimises the signal-to-ground spacing of the S-CPW transmission lines without changing the characteristic impedance of the lines. Optimising the S-CPW transmission line for 60 GHz increases the Q-factor from 38 to 50 in simulation, a 32 % improvement, and from 8 to 10 in measurements. Furthermore, replacing only one inductor in the output matching network of the LNA with the higher Q-factor inductor, improves the input and output matching performance of the LNA, resulting in a 5 dB input and output reflection coefficient improvement. Although a 5 dB improvement in matching performance is obtained, the resultant noise and gain performance show no significant improvement. The single stage LNAs achieve a simulated gain and NF of 13 dB and 5.3 dB respectively, and dissipate 6 mW from the 1.5 V supply. The LNA focused to attain high gain and a low NF, trading off linearity and as a result obtained poor 1 dB compression of -21.7 dBm. The LNA results are not state of the art but are comparable to SiGe BiCMOS LNAs presented in literature, achieving similar gain, NF and power dissipation figures. / Dissertation (MEng)--University of Pretoria, 2012. / Electrical, Electronic and Computer Engineering / unrestricted