HfO2 is a popular replacement for SiO2 in modern CMOS technology. It is used as the gate dielectric layer isolating the transistor channel from the gate. For this application, certain material property demands need to be met, most importantly, a high static dielectric constant is desirable as this positively influences the effectiveness and reliability of the device. Previous theoretical calculations have found that this property varies with the crystal structure of HfO2; specifically, the tetragonal structure possesses the highest dielectric constant (~70 from theoretical calculations) out of all possible stable structures at atmospheric pressure, with the cubic phase a far second (~29, also calculated). Following the results from previous experimental work on the phase formation of sputtered HfO2, this study investigates the possibility of producing thin films of HfO2 with the cubic or tetragonal structure by the addition of nitrogen to a reactive sputtering process at various deposition temperatures. Also, a new physical vapor deposition method known as High Power Impulse Magnetron Sputtering (HiPIMS) is employed for its reported deposition stability in the transition zone of metal-oxide compounds and increased deposition rate. Structural characterization of the produced films shows that films deposited at room temperature with a low N content (~6 at%) are mainly composed of amorphous HfO2 with mixed crystallization into t-HfO2 and c-HfO2, while pure HfO2 is found to be composed of amorphous HfO2 with signs of crystallization into m-HfO2. At 400o C deposition temperature, the crystalline quality is enhanced and the structure of N incorporated HfO2 is found to be c-HfO2 only, due to further ordering of atoms in the crystal lattice. Optical and dielectric characterization revealed films with low N incorporation (< 6 at%) to be insulating while these became conductive for higher N contents. For the insulating films, a trend of increasing static dielectric constant with increasing N incorporation is found.

In this study, WO3 and NiO thin films were deposited on the ITO/Glass substrates by radio frequency (RF) magnetron sputtering, respectively. The physical and electrochromic properties of thin films were investigated. On the other hand, the lithium perchlorate (LiClO4) powder was dispersed in propylene carbonate (PC) solvent to complete 1 M electrolyte. Then, as the 4.5 wt.% of ethyl cellulose and 8 wt.% ethylene carbonate (EC) were added to this electrolyte under stirring, a gel polymer electrolyte (GPE) was formed. Finally, the WO3 and NiO thin films obtained with the optimal deposition parameters were combined with the GPE to set up a complementary electrochromic device (CECD). The effects of the various coloring voltages on the electrochromic properties of CECD are investigated. The memory effect, energy-saving efficient, response time and switch lifetime of CECD are also estimated and discussed. Experimental results reveal that the amorphous thin films can be obtained with the RF power of 100 W and oxygen concentration of 60% at room temperature (RT). The thicknesses of WO3 and NiO films were approximately 530 nm and 180 nm, respectively. The stoichiometric of thin films were 2.99 for O/W ratio and 1.01 for O/Ni ratio. The GPE [(1 M LiClO4+PC)+ethyl cellulose(4.5 wt.%)+EC(8 wt.%)] exhibits a viscosity coefficient of 100 mPa∙s, a maximum ion conductivity (£m) of 7.17 mS/cm, a minimum activation energy (Ea) of 0.033 eV and a average visible transmittance of 82% at RT. The optimal electrochromic CECD (Glass/ITO/WO3/GPE/NiO/ITO/Glass) biased with a coloring/bleaching voltage of ¡Ó2.2 V revealed a transmittance variation (£GT%) of 54.53%, an optical density change (£GOD) of 0.790, an intercalation charge (Q) of 6.28 mC/cm2 and a coloration efficiency (£b) of 125.21 cm2/C at a wavelength (£f) of 550 nm. The chromaticity coordinates of CECD were x=0.289 and y=0.365 under the colored state. In addition, the energy-saving efficient of CECD was 15.19 W/V-m2 over the wavelength range between 380 nm and 780 nm. Also, it presented an open-circuit memory effect that the colored transmittance (£f at 550 nm) was 18.9% in 24 h. The total response time of the CECD was about 4 s for coloring and bleaching steps. After the repeated switch of 1,000 times, the £GT% of CECD was 43.57%. In this study, WO3 and NiO thin films with good adhesion, amorphous, and nearly stoichiometric were successfully deposited by RF sputter. Furthermore, high £m and high transmittance of GPE can be prepared easily and inexpensively. Our results demonstrated that the CECD exhibited the advantages of low applied voltage, high £b, fast response time and long-term memory characteristics.

It is well known that thermally evaporated a-As2S3 thin films are prone to oxidation when exposed to an ambient environment. These As2O3 crystals are a major source of scattering loss in sub-micron optical integrated circuits. Magnetron sputtering a-As2S3 not only produces films that have optical properties closer to their equilibrium state, the as-deposited films also show no signs of photo-decomposed As2O3. The TM propagation loss of the as-deposited As2S3-on-Ti:LiNbO3 waveguide is 0.20 plus/minus 0.05 dB/cm, and it is the first low loss hybrid waveguide demonstration. Using the recipe developed for sputtering As2S3, a hybrid Mach-Zehnder interferometer has been fabricated. This allows us to measure the group index of the integrated As2S3 waveguide and use it in the study of the group velocity dispersion in the sputtered film, as both material dispersion and waveguide dispersion may be present in the system. The average group index of the integrated As2S3 waveguide is 2.36 plus/minus 0.01. On-chip optical amplification was achieved through thermal diffusion of erbium into X-cut LiNbO3. The net gain measured for a transverse magnetic propagation mode in an 11 μm wide Er:Ti:LiNbO3 waveguide amplifier is 2.3 dB plus/minus 0.1 dB, and its on-chip gain is 1.2 plus/minus 0.1 dB/cm. The internal gain measured for a transverse electric propagation in an 7 μm wide Er:Ti:LiNbO3 waveguide amplifier is 1.8 dB plus/minus 0.1 dB and is among the highest reported in the literature. These gains were obtained with two 1488 nm lasers at a combined pump power of 182mW. In order to increase further the on-chip gain, we have to improve the mode overlap between the pump and the signal. This can be done by doping erbium into As2S3 film using multi-layer magnetron sputtering. The Rutherford backscattering spectroscopy shows that the doping of Er:As2S3 film with 16 layers of erbium is homogeneous, and Raman spectroscopy confirms no significant amount of Er-S clusters in the sputtered film. The deposition method was used to fabricate an Er:As2S3 waveguide, and the presence of active erbium ions in the waveguide is evident from the green luminescence it emitted when it was pumped by 1488 nm diode laser.

Applications of semiconductor nanocrystal in electronics are promising. Various techniques were developed to synthesize and analyze semiconductor nanocrystals for integrated circuit applications. In this study, silicon and germanium nanocrystals were synthesized in silicon dioxide matrix by magnetron sputtering deposition and following high temperature furnace annealing. Multilayer and single layer samples were prepared by co-sputtering depositions. Transmission electron microscopy measurements were carried out to analyze annealing effects on nanocrystal size distribution, change in shape, density and localization in silicon dioxide (SiO2). Ge-Ge Traverse Optical (TO) peak was monitored using Raman spectroscopy to investigate germanium nanocrystal formation and stress effects of silicon dioxide. Si-O-Si asymmetric stretching band is examined by Fourier transform infrared transmission spectroscopy to study silicon dioxide matrix recovery with germanium nanocrystal formation. Luminescence characteristics of silicon nanocrystals in visible and near infrared region (550nm-1050nm) with changing nanocrystal size and density were studied with photoluminescence spectroscopy.

In this study, silicon (Si) rich silicon dioxide (SiO2) films and terbium (Tb) embedded in three different Si containing films has been produced by e-beam evaporation and magnetron sputtering techniques. Post deposition annealing was done for different temperatures and durations to study its effect on both Si nanocrystal formation and Tb luminescence. It was verified by X-ray diffraction technique (XRD) that Si nanocrystals were formed in Si rich matrices. Energy dispersive X-ray (EDS) spectroscopy analysis was carried out to determine the relative concentrations of the atoms inside the produced films. X-ray photoelectron spectroscopy (XPS) gave the evidence of different bonding structures inside the Tb-Si-O containing films. Depth profile measurements were carried out to analyze changes in the relative concentration during sputtering of the layers after annealing of the Tb containing film. Luminescence characteristics of Si nanocrystals and Tb3+ ions were studied by photoluminescence (PL) spectroscopy. It was observed that Tb3+ luminescence enhanced by an energy transfer from Si nanocrystals and trap levels in a matrix. This result supplies valuable information about the excitation paths of Tb3+ ion the way of intense luminescence.

The L10 FePt phase belongs to the most promising hard ferromagnetic materials for high density recording media. The main challenges for thin FePt films are: (i) to lower the process temperature for the transition from the soft magnetic A1 to the hard magnetic L10 phase, (ii) to realize c-axes preferential oriented layers independently from the substrate nature and (iii) to control layer morphology supporting the formation of FePt - L10 self-organized isolated nanoislands towards an increase of the signal-to-noise ratio. In this study, dc magnetron sputtered FePt thin films on amorphous substrates were inve-stigated. The work is focalized on the correlation between structural and magnetic properties with respect to the influence of deposition parameters like growth mode (co-sputtering vs. layer – by - layer) and the variation of the deposition gas (Ar, Xe) or pressure (0.3 - 3 Pa). In low-pressure Ar discharges, high energetic particle impacts support vacancies formation during layer growth lowering the phase transition temperature to (320 +/- 20)°C. By reducing the particle kinetic energy in Xe discharges, highly (001) preferential oriented L10 - FePt films were obtained on a-SiO2 after vacuum annealing. L10 - FePt nano-island formation was supported by the introduction of an Ag matrix, or by random ballistic aggregation and atomic self shadowing realized by FePt depositions at very high pressure (3 Pa). The high coercivity (1.5 T) of granular, magnetic isotropic FePt layers, deposited in Ar discharges, was measured with SQUID magnetometer hysteresis loops. For non-granular films with (001) preferential orientation the coercivity decreased (0.6 T) together with an enhancement of the out-of- plane anisotropy. Nanoislands show a coercive field close to the values obtained for granular layers but exhibit an in-plane easy axis due to shape anisotropy effects. An extensive study with different synchrotron X-ray scattering techniques, mainly performed at the ESRF, BM-20 (ROBL-Beamline), pointed out the importance of in-situ investigations to clearly understand the kinetic mechanism of the A1 to L10 transition and ordering and to control FePt nanoclusters evolution.

Mittels reaktivem Magnetron-Sputtern hergestellte Indium-Zinn-Oxid-Dünnschichten wurden mit den Methoden der Röntgendiffraktometrie und Röntgenreflektometrie charakterisiert. Es konnte gezeigt werden, dass die Wahl des Arbeitspunktes bei der Schichtabscheidung erheblichen Einfluss auf Kristallitorientierung, Gitterkonstante und Größe der Schichtspannung hat. Zusätzlich wurden mittels des Langford-Verfahrens Korngröße und Mikrospannungen bestimmt. Im Rahmen der röntgenografischen Spannungsmessung zeigten sich nichtlineare Verläufe der Dehnung über sin²Ψ, die mit dem Kornwechselwirkungsmodell nach Vook und Witt erklärt werden.

In der vorliegenden Arbeit wird der reaktive ITO-Abscheidprozess unter Verwendung metallischer In:Sn-Targets eingehend untersucht. Die Schichtabscheidung erfolgt am symmetrisch bipolar gepulstem Dual-Magnetron sowohl auf ruhende als auch bewegte Substrate. Die Arbeit umfasst zwei Teilgebiete. Einerseits wurde der dynamische ITO-Abscheideprozess an einer industrienahen Versuchsanlage umfassend charakterisiert und anhand seiner physikalischen Parameter erfolgreich an eine industrielle Beschichtungsanlage überführt. Andererseits fanden statische Beschichtungen statt. Diese ermöglichen die Analyse der lateralen Verteilung der funktionellen Schichteigenschaften. Dadurch konnte eine Korrelation zu den lateralen Verteilungen der gemessenen Plasmaparameter herausgearbeitet werden.

Barium Strontium Titanate (BST) based ferroelectric thin film devices have been popular over the last decade due to their versatile applications in tunable microwave devices such as delay lines, resonators, phase shifters, and varactors. BST thin films are promising candidates due to their high dielectric constant, tunability and low dielectric loss. Dielectric-tunable properties of BST films deposited by different deposition techniques have been reported which study the effects of factors, such as oxygen vacancies, film thickness, grain size, Ba/Sr ratio, etc. Researchers have also studied doping concentrations, high temperature annealing and multilayer structures to attain higher tunability and lower loss. The aim of this investigation was to study material properties of Barium Strontium Titanate from a comprehensive point of view to establish relations between various growth techniques and the film physical and electrical properties. The primary goal of this investigation was to synthesize and characterize RF magnetron sputtered Barium Strontium Titanate (Ba1-xSrxTiO3), thin film structures and compare their properties with BST thin films deposited by sol-gel method with the aim of determining relationships between the oxide deposition parameters, the film structure, and the electric field dependence. In order to achieve higher thickness and ease of fabrication, and faster turn around time, a `stacked' deposition process was adopted, wherein a thin film (around 200nm) of BST was first deposited by RF magnetron sputtering process followed by a sol-gel deposition process to achieve higher thickness. The investigation intends to bridge the knowledge gap associated with the dependence of thickness variation with respect to the tunability of the films. The film structures obtained using the three different deposition methods were also compared with respect to their analytical and electrical properties. The interfacial effect on these `stacked' films that enhance the properties, before and after annealing these structures was also studied. There has been significant attention given to Graphene-based supercapacitors in the last few years. Even though, supercapacitors are known to have excellent energy storage capability, they suffer from limitations pertaining to both cost and performance. Carbon (CNTs), graphene (G) and carbon-based nanocomposites, conducting polymers (polyaniline (PANI), polypyrrole (PPy), etc.) have been the fore-runners for the manufacture of supercapacitor electrodes. In an attempt to better understand the leakage behavior of Graphene Polyaniline (GPANI) electrodes, BST and BST thin films were incorporated as constituents in the process of making supercapacitor electrodes resulting in improved leakage behavior of the electrochemical cells. A detailed physical, chemical and electrochemical study of these electrochemical cells was performed. The BST thin films deposited were structurally characterized using Veeco Dektek thickness profilometer, X-ray diffraction (XRD), Scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. The interfacial structural characterization was carried out using high-resolution transmission electron microscopy (HRTEM). This investigation, also presents noncontact electrical characterization of BST films using Corona Kelvin metrology (C-KM). The `stacked' BST thin films and devices, which were electrically tested using Corona Kelvin metrology, showed marked improvement in their leakage characteristics over both, the sputtered and the sol-gel deposited counterparts. The `stacked' BST thin film samples were able to withstand voltages up to 30V positive and negative whereas, the sol-gel and sputtered samples could hold only up to a few volts without charge leaking to reduce the overall potential. High frequency, 1GHz, studies carried out on BST thin film interdigitated capacitors yielded tunability near 43%. Leakage barrier studies demonstrated improvement in the charging discharging response of the GPANI electrochemical electrodes by 40% due to the addition of BST layer.

Nous étudions les mécanismes d'endommagement dus à l'érosion pluie sur des matériaux massifs et sur des matériaux revêtus. Pour cela, un banc d'essais spécifique a permis de mener des recherches en laboratoire. Le principe de l'essai repose sur l'émission de jets à haute vitesse et à haute fréquence.L'étude des matériaux massifs met en évidence un mécanisme de propagation de fissures par fatigue qui aboutit à des pertes de matière. Ces mêmes endommagements ont été observés sur des échantillons usés en service. Il a été confirmé que la dureté augmente la résistance à l'érosion pluie des matériaux métalliques.L'étude des revêtements s'est focalisée sur 2 technologies, à savoir la pulvérisation cathodique magnétron, qui est un procédé de déposition phase vapeur, et la projection thermique sous flamme supersonique. Les revêtements obtenus par projection thermique (dont l'épaisseur était supérieure à 200 μm), se sont révélés moins résistants à cause d'un manque d'adhérence ou de la présence de défauts au sein du matériau. Les revêtements obtenus par PVD (dont l'épaisseur était inférieure à 30 μm) ont permis d'obtenir des gains de résistance significatifs. Dans tous les cas, quel que soit la technologie utilisée, l'adhérence du revêtement s'est révélé être un paramètre critique en ce qui concerne la résistance de la surface à l'érosion pluie. Enfin, une simulation numérique en dynamique a permis d'étudier les champs de contraintes dans des feuillets métalliques, et ce, en faisant varier leurs épaisseurs, les matériaux qui les composent, et la vitesse d'impact. Les résultats de la simulation tendent à prouver que la propagation des ondes de contraintes dans le matériau peut entrainer des phénomènes de sur-contraintes dans les feuillets les plus fins à cause de la réflexion des ondes sur la face antérieure de la plaque.