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A near-field technique known as evanescent interferometric lithography allows for high resolution imaging. However its primary limitation is that the image exponentially decays within the photoresist due to physical limits. This thesis aims to overcome this limitation and presents a method to considerably enhance the depth of focus of images created using evanescent interferometric lithography by using a material underlay beneath the photoresist. A key enabler of this is the understanding that evanescent fields couple to surface states and operating within proximity of a resonance, the strength of the coupling allows for considerable energy extraction from the incident beam and redistribution of this energy in a photoresist cavity. This led to the analysis of the Fresnel equations, which suggested that such coupling was in fact the result of an enhanced reflectance that takes place at boundaries of carefully chosen materials. While it is known that metals and lossy dielectrics result in surface plasmon polaritons (SPP) and surface exciton polaritons (SEP) as conventional solutions to the Fresnel reflection equations for the TM polarization of light, there is no such naturally occurring surface state that allows evanescent wave enhancement with the TE polarization of light. Further investigation of the Fresnel reflection equations revealed both for TM and TE that in fact another solution exists that is but unconventional to enhance the reflectivity. This solution requires that one of the media have a negative loss. This is a new type of surface resonance that requires that one of the media be a gain medium; not one in the optical pumped sense but one that would naturally supply energy to a wave to make it grow. This new surface resonance is also a key result of this thesis. Clearly, however this is only a hypothetical solution as a real gain medium would violate the conservation of energy. However, as it is only the reflectance of this gain medium that is useful for evanescent wave enhancement, in fact a multilayered stack consisting of naturally occurring materials is one way to achieve the desired reflectivity. This would of course be only an emulation of the reflectivity aspect of the gain medium. This multilayered stack is then an effective gain medium for the reflectivity purposes when imaging is carried out at a particular NA at a particular wavelength. This proposal is also a key idea of this thesis. At λ = 193 nm, this method was used to propose a feasible design to image high resolution structures, NA = 1.85 at an aspect ratio of ~3.2. To experimentally demonstrate the enhancements, a new type of solid immersion test bed, the solid immersion Lloyd's mirror interference lithography test-bed was constructed. High quality line and space patterns with a half-pitch of 55.5 nm were created using λ = 405 nm, corresponding to a NA of 1.824, that is well in the evanescent regime of light. Image depths of 33-40 nm were seen. Next, the evanescent image was coupled to an effective gain medium made up of a thin layer of hafnium oxide (HfO) upon silicon dioxide (SiO2). This resulted in a considerable depth enhancement, and 105 nm tall structures were imaged. The work in this thesis details the construction of the solid immersion lithography test-bed, describes the implementation of the modeling tools, details the theory and analysis required to achieve the relevant solutions and understanding of the physical mechanism and finally experimentally demonstrates an enhancement that allows evanescent interferometric lithography beyond conventional limits.

Composite metamaterials are periodic metal-dielectric structures operating at wavelengths larger than the structure period. If properly designed these structures behave as homogeneous media described by effective permittivity and permeability parameters. These effective parameters can be designed to take values in domains that are not available in naturally occurring media; notably it is possible to design composite metamaterials with simultaneously negative permittivity and permeability, or, in other words, with a negative refractive index. However, in many experimental or numerical studies it is far from obvious that the use of a homogeneous model is justified for a given structure at a given wavelength. This issue is often glossed over in the literature. <br />In this work I take a detailed look at the fundamental assumptions on which effective medium models rely and put forward a method for determining frequency domains where a given structure may or may not be accurately described by homogeneous effective medium parameters. This work opens the door to a more detailed understanding of the transition between homogeneous and inhomogeneous behavior in composite metamaterials, in particular by introducing the novel notions of custom made effective medium model, and of meta-photonic crystal.

No description available.

<p dir="ltr">High-power microwave (HPM) devices are generally vacuum-based devices that transform electron beam energy into microwaves with peak powers above 100 MW from 1-300 GHz. Solid-state HPM devices provide more compactness and greater reliability while consuming less power. Nonlinear transmission lines (NLTLs) provide a solid-state alternative to HPM generation by sharpening the input pulses from a pulse forming network to create output oscillations.</p><p dir="ltr">The first section of this dissertation evaluates and explores the feasibility of using nonlinear composites containing ferroelectric (e.g., Ba_2/3Sr_1/3TiO₃, BST) and/or ferromagnetic (e.g., Ni_1/2Zn_1/2Fe₂O₄, NZF) inclusions in a linear polymer host (polydimethylsiloxane, PDMS) to tune NLTL properties for HPM applications. Appropriately modelling and designing NLTLs using nonlinear composites require accurately characterizing their linear and nonlinear electromagnetic properties. We first studied the electromagnetic properties of the composites using theoretical, numerical, and experimental approaches. Incorporating these composite models and characterizations into NLTL simulations will be discussed.</p><p dir="ltr">Vacuum-based HPM devices, such as magnetrons and crossed-field amplifiers, generally operate in the space-charge-limited region, which corresponds to the maximum current possible for insertion into the device. This motivated studying the space-charge-limited current and electron flow in a two-dimensional (2D) planar diode with various crossed-magnetic fields using particle-in-cell (PIC) simulations. For non-magnetically insulated diodes (electrons emitted from the cathode can reach the anode), analytical and/or semi-empirical solutions are derived for electrons with nonzero monoenergetic initial velocity that agree well with PIC simulations. For magnetically insulated conditions, we developed new metrics using simulations and analytic theories to assess electron cycloidal and Brillouin flow to understand the implications of increasing injection current for 2D diodes. These analyses provide details on the operation of these devices at high currents, particularly virtual cathode operation, that may elucidate behavior near their limits of operation.</p>

Le contexte de cette thèse couvre les dispositifs photoniques hybrides III-V sur silicium. L’étude porte sur l’intégration par collage de matériau à base d'InP sur le silicium, puis la conception d’un guide optique comportant une nanostructuration qui permettra la sélection en longueur d’onde dans un laser DFB hybride. Enfin, on étudie les étapes technologiques de fabrication d’un laser hybride injecté électriquement fonctionnant dans le domaine spectral 1.55µm, et on caractérise les dispositifs. Pour associer les matériaux III-V sur Si, nous avons développé le collage sans couche intermédiaire que l’on nomme collage hétéroépitaxial ou oxide-free. Ce collage est reporté dans la littérature comme présentant une meilleure qualité électrique. Nous avons établi les conditions de préparation permettant d’obtenir des surfaces parfaitement désoxydées, et les conditions de recuit conduisant à une interface hybride sans oxyde et sans dislocation. Mais ce recuit est réalisé à température assez élevée (~450-500°C). Nous avons alors développé le collage avec une fine couche intermédiaire d’oxyde réalisé à plus faible température -300°C- qui présente l'avantage d'être compatible avec la technologie CMOS. Nous avons étudié différentes approches pour élaborer et activer une couche d’oxyde très fine (~3nm), de façon à obtenir une surface collée sans zones localement non collées. Le collage est dans les deux cas réalisé sous vide dans un équipement de type Bonder Suss SB6e. La qualité structurale de l’interface a été observée par STEM et la qualité mécanique du joint de collage a été caractérisée par indentation. Une méthode originale de mesure quantitative et locale de l’énergie du joint de collage a été développée. La qualité optique des couches collées a été étudiée par la mesure de la photoluminescence de puits quantiques placés proches du joint d’interface. En conséquence du collage sans couche intermédiaire ou avec une couche très fine, le design du mode optique est de type double-cœur, qui ne nécessite pas de taper. Le guide optique Si est de type shallow ridge, le confinement latéral étant assuré par un matériau nanostructuré à une période sub-longueur d’onde. Ce matériau fonctionne comme un matériau effectif uniaxe pour lequel on a calculé les indices optiques ordinaire et extraordinaire selon la géométrie de la nanostructuration. On peut rajouter sur cette nanostructuration une super-périodicité qui conduit à un fonctionnement sélectif en longueur d’onde. Le comportement modal du guide est simulé à l'aide du logiciel COMSOL Multiphysics, le comportement spectral est simulé par FTDT 3D. Nous avons validé la pertinence de ce design en mesurant la transmission de guides hybrides. Ce design sera inclus dans un laser et permettra d’obtenir une émission monofréquence de type DFB. Nous avons développé les étapes technologiques nécessaires à la fabrication d’un laser hybride à base d'InP sur Silicium fonctionnant en injection électrique. Nous avons mis en oeuvre de nombreuses techniques, et développé plusieurs procédés spécifiques, en particulier, des procédés de gravure sèche de type Inductive Coupled Plasma Reactive Ion Etching ICP-RIE pour la gravure de la nanostructuration dans le silicium, et pour la gravure du mésa du laser. La présence des 2 matériaux III-V et Si dans le dispositif hybride rend ces étapes complexes. Les premiers résultats peuvent être améliorés en optimisant la technologie des contacts. Un design permettant de s’affranchir de la pénalité thermique présenté par tous les dispositifs ayant les 2 contacts électriques du coté du matériau III-V a été proposé, exploitant le passage du courant à l’interface hybride III-V / Si, ce qui est possible dans le cas du collage oxide-free. Cette approche ouvre des perspectives d’intégration au-delà de la photonique. / This work contributes to the general context of III-V materials on Silicon hybrid devices for optical integrated functions, mainly emission/amplification at 1.55µm. Devices are considered for operation under electrical injection, reaching performances relevant for data transfer application. The main three contributions of this work concern: (i) bonding InP-based materials on Si, (ii) nanostructuration of the Si guiding layer for spatial and spectral control of the guided mode and (iii) technology of an hybrid electrically injected laser, with a special attention to the thermal budget. Bonding has been investigated following two approaches. The first one we call heterohepitaxial or oxide-free bonding, is performed without any intermediate layer at a temperature ~450°C. This approach has the great advantage allowing electrical transport across the interface, as reported in the literature. We have developed oxide-free surface preparation for both materials, mainly InP-based layers, and established bonding parameter processing. An in-depth STEM and RX structural characterization has demonstrated an oxide-free reconstructed interface without any dislocation except on one or two atomic layers which accommodate the large lattice mismatch (8.1%) between InP and Si. Photoluminescence of quantum wells intentionally grown close to the interface has shown no degradation. We have also developed an oxide-based bonding process operated at 300°C in order to be compatible with CMOS processing. The original ozone activation of the very thin (~5nm) oxide layer we have proposed demonstrates a bonding surface without any unbonded area due to degassing under annealing. We have developed an original method based on nanoindentation characterization in order to obtain a quantitative and local value of the surface bonding energy. Related to the absence or to the very thin intermediate layer between the two materials, our modal design is based on a double core structure, where most of the optical mode is confined in the Si guiding layer, and no taper is required. The Si waveguide on top of the SOI stack is a shallow ridge. A nanostructured material on both sides of the waveguide core ensures the lateral confinement, the nanostructuration geometry being at a sub-wavelength period in order to operate this material well below its photonic gap. It behaves as an uniaxial material with ordinary and extraordinary indices calculated according to the structuration geometry. Such a structuration allows modal and spectral control of the guided mode. 3D modal and spectral simulation have been performed. We have demonstrated, on a double-period structuration, a wavelength selective operation of hybrid optical waveguides. Such a double-period geometry could be included in a laser design for DFB operation. This nanostructuration has larger potential application such as coupled waveguides arrays or selective resonators. We have developed all the technological processing steps for an electrically injected hybrid laser fabrication. Main developments concern dry etching, performed with the Inductive Coupled Plasma Reactive Ion Etching ICP-RIE technique of both the nanostructuration of the Silicon material, and the mesa of the hybrid laser. Efficient electrical contacts fabrication is also a complex step. First lasers operating performances could be improved. We have investigated a specific design in order to overcome the thermal penalty encountered by all the hybrid devices. This penalty is due to the thick buried oxide layer of the SOI stack that prevents heating related to the current flow to be dissipated. Taking advantage of the electrical transport we have shown at the oxide-free interface, we propose a design where the n-contact is defined on the guiding Si layer, suppressing thermal heating under electrical operation. Such an approach is very promising for densely packed hybrid devices integrated with associated electronic driving elements on Si.