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The Global ETD Search service is a free service for researchers
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Showing 21 to 24 of 24 (0.088 seconds)Spelling suggestions: "subject:"hauptphasenumwandlung"" "subject:"gesellschaftsumwandlung""
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From cuprates to manganites: spin and orbital liquidsKilian, Rolf 05 July 1999 (has links) (PDF)
Both cuprates and manganites belong to the transition metal oxides. The physics of these compounds is characterized by a dualism of local electron interaction and itinerant charge motion. In the present work, several key issues of metallic cuprates and manganites are addressed on a theoretical level, while close connection to recent experimental work is kept. The work is based on the notion of spin and orbital liquids, representing elegant tools to handle the strongly correlated nature of the metallic state in an efficient and transparent manner. A concise introduction to the physics of cuprates and manganites as well as to the methods employed is presented at the beginning of the work. In a subsequent part, we show that the peculiar magnetic response of metallic cuprates upon impurity doping can be successfully explained within a spin-liquid picture. The remainder of the work is devoted to the metallic state of manganites. Elaborating on the notion of an orbital liquid, the interplay of electron correlations, orbital degeneracy, and double exchange is studied. Thereby, the unconventionally large incoherent optical spectrum of metallic manganites and the pronounced softening of the magnon spectrum observed in experiment can be explained. Finally, a theory of the metal-insulator transition of manganites is presented which is based upon the newly introduced notion of orbital polarons. In general, we believe the close agreement of our results with experiment to strongly support the validity of our approach, giving new insight into the spectacular and sometimes as-tonishing physics of transition metal oxides.
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From cuprates to manganites: spin and orbital liquidsKilian, Rolf 26 July 1999 (has links)
Both cuprates and manganites belong to the transition metal oxides. The physics of these compounds is characterized by a dualism of local electron interaction and itinerant charge motion. In the present work, several key issues of metallic cuprates and manganites are addressed on a theoretical level, while close connection to recent experimental work is kept. The work is based on the notion of spin and orbital liquids, representing elegant tools to handle the strongly correlated nature of the metallic state in an efficient and transparent manner. A concise introduction to the physics of cuprates and manganites as well as to the methods employed is presented at the beginning of the work. In a subsequent part, we show that the peculiar magnetic response of metallic cuprates upon impurity doping can be successfully explained within a spin-liquid picture. The remainder of the work is devoted to the metallic state of manganites. Elaborating on the notion of an orbital liquid, the interplay of electron correlations, orbital degeneracy, and double exchange is studied. Thereby, the unconventionally large incoherent optical spectrum of metallic manganites and the pronounced softening of the magnon spectrum observed in experiment can be explained. Finally, a theory of the metal-insulator transition of manganites is presented which is based upon the newly introduced notion of orbital polarons. In general, we believe the close agreement of our results with experiment to strongly support the validity of our approach, giving new insight into the spectacular and sometimes as-tonishing physics of transition metal oxides.
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Supraleitung in Gallium-implantiertem Silizium / Superconductivity in gallium-implanted siliconSkrotzki, Richard 21 July 2016 (has links) (PDF)
Die vorliegende Arbeit beschäftigt sich mit der elektrischen Charakterisierung 10 nm dünner Schichten bestehend aus amorphen Ga-Nanoclustern eingebettet in Ga-dotiertes polykristallines Si. Die Herstellung der Schichten geschieht via Ionen-Implantation in Si-Wafer samt anschließender thermischer Ausheilung. Elektrische Transportmessungen in Magnetfeldern von bis zu 50 T zeigen, dass die Schichten durch Variation der Ausheilparameter zwei strukturelle Supraleiter-Isolator-Übergänge durchlaufen. TEM-gestützte Strukturanalysen decken auf, dass den Übergängen eine Gefügetransformation zugrunde liegt, die das Wechselspiel zwischen supraleitender Cluster-Kopplung und kapazitiver Ladungsenergie sowie dem Ausmaß von thermischen und Quantenfluktuationen beeinflusst. Im supraleitenden Regime (Tc = 7 K) wird ein doppelt reentrantes Phänomen beobachtet, bei dem Magnetfelder von mehreren Tesla in anisotroper Form die Supraleitung begünstigen. Eine qualitative Erklärung gelingt via selbstentwickeltem theoretischen Modell basierend auf Phaseslip-Ereignissen für Josephson-Kontakt-Netzwerke. Für Anwendungen im Bereich der Sensor-Technologie und Quanten-Logik werden die Schichten erfolgreich via Fotolithographie und FIB (focused ion beam) mikro- und nanostrukturiert. Dadurch gelingt die erstmalige Beobachtung des Little-Parks-Effektes in einer Nanostruktur aus amorphem Ga. / The following thesis is devoted to the electrical characterization of 10 nm thin layers consisting of amorphous Ga nanoclusters embedded in Ga-doped polycrystalline Si. The preparation of the layers is realized via ion implantation in Si wafers plus subsequent thermal annealing. Electrical-transport measurements in magnetic fields of up to 50 T show that the layers undergo two structural superconductor-insulator transitions upon variation of the annealing parameters. Structural analyzes based on TEM investigations reveal an underlying transformation of the size and distance of the clusters. This influences the interplay of the superconducting cluster coupling and capacitive charging energy as well as the extent of thermal and quantum fluctuations. In the superconducting regime (Tc = 7 K) a double-reentrant phenomenon is observed. Here, magnetic fields of several Tesla facilitate superconductivity in an anisotropic way. A qualitative explanation is given via a self-developed theoretical model based on phase-slip events for Josephson-junction arrays. With respect to applications regarding sensor technology and quantum logic circuits the layers are successfully micro- and nanostructured via photolithography and FIB. This allows for the first observation of the Little-Parks effect in a nanostructure of amorphous Ga.
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Supraleitung in Gallium-implantiertem SiliziumSkrotzki, Richard 12 July 2016 (has links)
Die vorliegende Arbeit beschäftigt sich mit der elektrischen Charakterisierung 10 nm dünner Schichten bestehend aus amorphen Ga-Nanoclustern eingebettet in Ga-dotiertes polykristallines Si. Die Herstellung der Schichten geschieht via Ionen-Implantation in Si-Wafer samt anschließender thermischer Ausheilung. Elektrische Transportmessungen in Magnetfeldern von bis zu 50 T zeigen, dass die Schichten durch Variation der Ausheilparameter zwei strukturelle Supraleiter-Isolator-Übergänge durchlaufen. TEM-gestützte Strukturanalysen decken auf, dass den Übergängen eine Gefügetransformation zugrunde liegt, die das Wechselspiel zwischen supraleitender Cluster-Kopplung und kapazitiver Ladungsenergie sowie dem Ausmaß von thermischen und Quantenfluktuationen beeinflusst. Im supraleitenden Regime (Tc = 7 K) wird ein doppelt reentrantes Phänomen beobachtet, bei dem Magnetfelder von mehreren Tesla in anisotroper Form die Supraleitung begünstigen. Eine qualitative Erklärung gelingt via selbstentwickeltem theoretischen Modell basierend auf Phaseslip-Ereignissen für Josephson-Kontakt-Netzwerke. Für Anwendungen im Bereich der Sensor-Technologie und Quanten-Logik werden die Schichten erfolgreich via Fotolithographie und FIB (focused ion beam) mikro- und nanostrukturiert. Dadurch gelingt die erstmalige Beobachtung des Little-Parks-Effektes in einer Nanostruktur aus amorphem Ga. / The following thesis is devoted to the electrical characterization of 10 nm thin layers consisting of amorphous Ga nanoclusters embedded in Ga-doped polycrystalline Si. The preparation of the layers is realized via ion implantation in Si wafers plus subsequent thermal annealing. Electrical-transport measurements in magnetic fields of up to 50 T show that the layers undergo two structural superconductor-insulator transitions upon variation of the annealing parameters. Structural analyzes based on TEM investigations reveal an underlying transformation of the size and distance of the clusters. This influences the interplay of the superconducting cluster coupling and capacitive charging energy as well as the extent of thermal and quantum fluctuations. In the superconducting regime (Tc = 7 K) a double-reentrant phenomenon is observed. Here, magnetic fields of several Tesla facilitate superconductivity in an anisotropic way. A qualitative explanation is given via a self-developed theoretical model based on phase-slip events for Josephson-junction arrays. With respect to applications regarding sensor technology and quantum logic circuits the layers are successfully micro- and nanostructured via photolithography and FIB. This allows for the first observation of the Little-Parks effect in a nanostructure of amorphous Ga.
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