Bottom-up nanofabrication, although still in its early stages with formidable challenges, is considered a potential alternative method to address the limitations of traditional top-down techniques by offering benefits including process simplification, cost reduction, and environmental friendliness. DNA-templated nanofabrication, one of the most powerful bottom-up methods, presents an innovative way to create advanced nanoelectronics. In this approach, nanomaterials with specific electronic, photonic, or other functions are precisely and programmably positioned on DNA nanostructures from a disordered collection of smaller parts. These self-assembled structures offer significant potential for improving many fields such as biosensing, drug delivery and electronic device manufacturing. This dissertation reports the successful fabrication of semiconductor-metal Schottky contacts using a DNA origami scaffold. The scaffold, consisting of DNA strands organized into a specific bar-shaped architecture, facilitates the competitive arrangement of gold and cadmium sulfide nanorods, forming heterojunctions, and addressing previous limitations in semiconductor nanomaterial availability. Electrical characterization reveals nonlinear Schottky barrier properties, with electrical conductivity ranging from 1.1 to 3.7 — 104 S/m, marking a several million-fold increase over prior work. This research establishes the feasibility of using cadmium sulfide prepared as a n-type semiconductor material and an innovative self-assembly approach for making nanoscale Schottky contacts, paving the way for the future development of DNA-based nanoscale logic gate circuits.

The effect of electromagnetically induced transparency is observed, using nanocelland microcell. The EIT-resonance with good parameters (high contrast and small FWHM) is obtained in thick cells. The EIT-resonance splitting in magnetic field is observed for the cases of D1-line of 85Rb and 85Rb. The theoretical model, explaining the EIT-resonance components frequency shift dependence on magnetic field strength is presented. The theoretical and experimental results are compared and good agreement is shown. Also the EIT-resonance behavior in hyperfine Paschen-Back regime is presented and explained. For the first time the N-type resonance in microcell is observed. Good parameters of theN-type resonance in microcell are obtained. It allows us to observe the N-type resonance behavior in magnetic field. The N-resonance splitting in magnetic field is observed for the cases of 85Rb and 85Rb. The theoretical calculations of the N-resonance components frequency shift dependence on magnetic field is presented. The theoretical and experimental results are compared and good agreement is shown. Also the N-resonance behavior in hyperfine Paschen-Back regime is presented and explained. Simultaneous observation of N- and EIT-resonance is shown. Comparison of EIT- and N-resonance is made

>Magister Scientiae - MSc / Electron-mediated nuclear plasma interactions (NPIs), such as Nuclear Excitation by Electron Capture (NEEC) or Transition (NEET), can have a signi cant impact on nuclear cross sections in High Energy Density Plasmas (HEDPs). HEDP environments are found in nuclear weapons tests, National Ignition Facility (NIF) shots and in the cosmos where nucleosynthesis takes place. This thesis explores the impact of NPIs on highly excited nuclei. This impact is understood to be more intense in highly-excited nuclei states in the quasi-contiuum which is populated by nuclear reactions prior to their decay by spontaneous -ray emission. Attempts thus far have failed in measuring the NEEC process [1, 2], while NEET process has been observed experimentally [3, 4]. Direct observation of NPIs is hindered by the lack of a clear signature of their effect in HEDP environments. Hence this should test a new signature [5] for NPIs for highly-excited nuclei by investigating isomeric to ground state feeding from the isomeric state. An experiment was performed using the reactions 197Au(13C, 12C)198Au and 197Au(13C, 12C2n)196Au at Lawrence Berkeley National Laboratory in inverse kinematics with an 197Au beam of 8.5 MeV/u energy. Several measurements were performed with different target configurations. The activated foils were counted at the low-background counting facility of Lawrence Livermore National Laboratory. From these data, the double isomeric to ground state ratio (DIGS) were extracted with the assistance of the decay equations that were included in the experiment. As the NPIs effects are rather small the lines for analysis had to be chosen carefully so that the extracted ratios would not contain significant errors. The measured DIGS ratios were then compared with the result of the theoretical DIGS ratios. The results showed that the calculated DIGS ratios deviated substantially from unity although this was with large uncertainties. Because of the large errors obtained, the DIGS ratios were found to be inconclusive as a signature for detecting the effects of NPIs such as angular momentum distribution changes in HEDP environmen

Les cellules photovoltaïques à base de silicium cristallin représentent plus de 90% du marché photovoltaïque mondial. Des architectures de cellules à haut rendement de conversion sont actuellement développées. Pour atteindre leurs performances maximales, ces architectures nécessitent néanmoins une amélioration des propriétés électriques des substrats de silicium cristallin. Les objectifs de cette thèse sont d’identifier les défauts limitant les propriétés électriques de ces substrats, de comprendre les mécanismes menant à leur formation et de proposer des moyens permettant leur neutralisation. Les matériaux étudiés sont des plaquettes de silicium Czochralski de type n, généralement utilisé pour les applications à haut rendement. Le four de tirage Czochralski a d’abord été modélisé afin de comprendre comment le passé thermique subi par le lingot de silicium lors de la cristallisation affecte la génération des défauts. Ces travaux ont été confirmés via des confrontations avec des données expérimentales, en utilisant une méthode originale développée dans le cadre de ce travail. Nous avons ensuite étudié l’influence du budget thermique lié aux procédés de fabrication des cellules sur la population de défauts. Nous avons ainsi pu montrer que la nature des défauts limitant les propriétés électriques du silicium était grandement modifiée selon le procédé de fabrication de cellules utilisé. Nous avons en outre mis en évidence une dégradation inattendue des propriétés électriques du silicium Czochralski de type n sous illumination, liée à la formation d’un défaut volumique inconnu. Les conditions de formation et de suppression de ce défaut ont été étudiées en profondeur. Enfin, les principaux défauts limitant les propriétés électriques du silicium ayant été identifiés et les mécanismes menant à leur formation compris, nous proposons dans un dernier chapitre des nouvelles techniques de caractérisation permettant de détecter les plaquettes défectueuses en début de ligne de production de cellules photovoltaïques, et ce à une cadence industrielle. / Photovoltaic solar cells based on crystalline silicon represent more than 90% of the worldwide photovoltaic market. High efficiency solar cell architectures are currently being developed. In order to allow their maximal performances to be reached, the electronic properties of their crystalline silicon substrate must however be enhanced. The goals of the present work are to identify the defects limiting the electronic properties of the substrate, to understand the mechanisms leading to their formation and to propose routes for their neutralization. The studied materials are n-type Czochralski silicon wafers, usually used as substrates for high efficiency photovoltaic applications. The Czochralski puller was first modeled in order to understand how the thermal history experienced by the silicon ingot during crystallization affects the defects generation. This study were validated through the comparison with experimental data using an original method developed in the frame of this work. We then studied the influence of the thermal budget associated to solar cell fabrication processes on the defects population. We thus showed that the nature of lifetime-limiting defects was completely changed depending on the solar cell fabrication process. Besides, we evidenced an unexpected degradation of the electronic properties of n-type Czochralski silicon under illumination, related to the formation of an unknown bulk defect. The formation and deactivation features of this defect were extensively studied. Finally, the main limiting defects being identified and the mechanisms resulting in their formation understood, we propose in a last chapter new characterization techniques for the detection of defective wafers at the beginning of production lines at an industrial throughput.

This thesis investigated the use of carbon nanotubes as active components in solution processible organic semiconductor devices. We investigated the use of functionalized carbon nanotubes in carbon nanotubes network transistors (CNNFET) and in photoactive composites with conjugated polymers. For CNNFETs, the objective was to obtain detailed understanding of the dependence of transistor characteristics on nanotubes bundle sizes, device geometry and processing. Single walled carbon nanotubes were functionalized by grafting octadecylamine chains onto the tubes, which rendered them dispersible in organic solvents for solution processing. To investigate the dependence of electronic properties of carbon nanotubes networks on bundle size, we developed a centrifugal fractionation protocol that enabled us to obtain nanotube bundles of different diameters. The electronic properties of networks of nanotube bundles deposited from solution were investigated within a CNNFET device configuration. By comparing devices with different degree of bundling we elucidated the dependence of key device parameters (field effect mobility and on/off ratio) on bundle sizes. We further found that, in contrast to traditional inorganic transistors, the electronic properties of the CNNFETs were dominated by the channel rather than contact resistance. Specifically, the apparent mobility of our devices increased with decreasing channel length, suggesting that the charge transport properties of CNNFETs are bulk rather than contacts dominated. This meant that charge traps in the channel of the device had a significant effect on transport properties. We found that charge traps in the channel region introduced by adsorbed oxygen and silanol groups on the SiO2 surface were responsible for the dominant p-type conductance in as-fabricated devices. Based on this understanding, we demonstrated the p-type to n-type conversion of the transistor characteristics of CNNFETs by depositing nanotubes on electron-trapfree dielectric surfaces. Finally, by combining annealing and surface treatment, we fabricated CNNFETs with high n-type mobility of 6cm2/V.s. For polymer composites, the objective was to obtain detailed understanding of the interactions between carbon nanotubes and the conjugated polymer; a prerequisite for using these composites in organic electronic devices. We fabricated well dispersed nanotube/polymer composites by using functionalized carbon nanotubes and studied the effect of nanotubes addition on the photophysical properties of the technologically important conjugated polymer poly(3-hexylthiophene) (P3HT). Measurement of the photoluminescence efficiency of nanotubes/polymer composites showed that addition of 10wt% carbon nanotubes effectively quenched the polymer emission indicating close electronic interactions. This indicated that nanotubes/polymer composites have potential in organic photovoltaic or light-sensing devices. Further analysis of the steady-state photoluminescence spectra revealed that nanotube addition resulted in increased structural disorder in the polymer. The incorporation of structural disorder into the polymer with the addition of even a small amount of carbon nanotubes may be detrimental to charge transport. UV-vis adsorption studies revealed that one-dimensional templating of P3HT chains by nanotubes resulted in a red-shifted feature in the solutionstate optical adsorption spectra of P3HT. This suggested that presence of nanotube surface templates the polymer self-organisation to produce highly ordered coating of P3HT chains around the nanotube. In order to elucidate the nanoscale origin of this phenomenon, we performed detailed STM studies on individual nanotubes adsorbed with P3HT chains. Since carbon nanotubes can be considered as rolled up sheets of graphite, we also performed STM on P3HT chains assembly on graphite for comparison. For P3HT assembly on HOPG, we found that while 2D crystals were observed when P3HT was cast onto HOPG from dilute solution, a thicker and more disordered film resulted when cast from concentrated solutions and subsequent layers were more likely to align normal to an underlying monolayer of P3HT on the HOPG surface. STM studies of nanotube/polymer mixtures revealed that the P3HT chains are adsorbed on nanotubes surface in such a way that the thiophene and hexyl moieties of the polymer associated with the nanotube surface in identical manner to P3HT monolayer depositions on graphite. This resulted in the increased order as inferred from adsorption UV-Vis spectroscopy, where the polymer chains, which are otherwise prone to chain kinks and twists in solution, adopt a planar configuration when adsorbed onto the nanotube surface.

Pain signaling involves transmission of nociceptive stimuli in the spinal cord where a critical balance between excitatory and inhibitory inputs determines the response to noxious stimuli. The neuropeptide, substance P (SP), mediates transmission of pain in part by binding to the tachykinin receptor (NK-1R) in the dorsal horn (DH) of the spinal cord. One of SP’s downstream effects is to modulate N-type Ca2+(N-) channels. While phospholipid breakdown is a part of the inflammatory process that accompanies tissue damage, the role of this metabolic pathway has not been completely described with respect to N-channel modulation during pain signaling. Despite the incomplete understanding of this modulation, pharmacological antagonists of both NK-1R and N-channels have been used to treat pain. In Chapter II, using whole-cell patch clamp recording techniques, the SP signaling cascade that mediates inhibition of recombinant N-channel activity was characterized. By adopting a pharmacological approach, I show that this pathway resembles the slow pathway that was earlier described for modulation of N-current by the M1 muscarinic receptor (M1R). M1R couples to Gq to stimulate phospholipid breakdown. Together with previous observations, the data presented in this chapter provide evidence for involvement of the extracellular receptor kinase (ERK1/2), phospholipase A2 and release of phospholipid metabolites in the modulation of N-current by SP. Overall, this chapter shows that phospholipid metabolism involved in modulation of N-currents is not specific to M1Rs but that other Gq-coupled receptors may also modulate N-currents via the same signal transduction pathway. In Chapter III, enhancement of N-current by SP was studied as part of a collaborative project to understand current enhancement that occurs when a palmitoylated accessory CaVβ2a subunit is co-expressed with the pore-forming subunit CaV2.2 and the accessory subunit α2δ-1. When CaVβ3 is present, SP inhibits N-current as described in Chapter II. However, when palmitoylated CaVβ2a is co-expressed with CaV2.2 (and α2δ-1), current enhancement is observed at negative test potentials, demonstrating that both M1Rs and NK-1Rs exhibit the same profile of N-current modulation. This change in modulation by muscarinic agonists is not observed in the presence of a depalmitoylated CaVβ2a. However a chimeric CaVβ2aβ1b subunit that contains the palmitoylated N-terminus from CaVβ2a confers enhancement. Normally expression of the β1b subunit resulted in current inhibition. These findings indicated that the palmitoylated CaVβ2a participates in enhancement of current. Our data support a model where inhibition dominates over enhancement; when inhibition is blocked, enhancement may be observed. Lastly, we show that N-current inhibition by SP is minimized when exogenous palmitic acid is applied to cells co-expressing CaVβ3 subunits with N-channels. These results indicate that the presence of palmitic acid can prevent N-current inhibition when SP is applied most likely by interacting with CaV2.2. We propose a model where palmitic acid occupies the inhibitory site and serves to antagonize inhibition by a lipid metabolite, which is most likely arachidonic acid. The CaVβ2a protein seems to have a role in positioning the palmitoyl groups near CaV2.2. This chapter provides a new role for protein palmitoylation where the palmitoyl groups of CaVβ2a are both necessary and sufficient to block inhibition of another protein: CaV2.2. In Chapter IV, I probe the role of the relative orientation of CaVβ2a and the pore-forming subunit of the N-channel in N-current modulation. Evidence is presented that shows that not just the presence of a palmitoylated CaVβ2a is necessary, but the relative orientation of CaVβ2a to CaV2.2 is critical for blocking inhibition. Using N-channel mutants that cause a change in the orientation of CaVβ2a relative to CaV2.2, I show that the block of inhibition is disrupted; inhibition by the slow pathway is rescued. These findings further support my model that the palmitoyl groups of CaVβ2a normally reside in a specific location that overlaps with the slow pathway inhibitory site on CaV2.2. Lastly I present data showing that the enhancement of N-current, observed when palmitoylated CaVβ2a is present, occurs via the slow pathway. In Chapter V the effect of CaVβ’s orientation on N-channel modulation by the dopamine D2 receptor is tested. In this form of modulation, inhibition is rapid and voltage-dependent. The signaling pathway is membrane-delimited since Gβγ, released after receptor stimulation, directly interacts with the N-channel at a site that overlaps with a high affinity binding site for CaVβs. While N-currents are modulated by this pathway, the deletion mutants show aberrant membrane-delimited modulation. The findings in this chapter further underscore the importance of proper positioning of CaVβ to CaV2.2 for eliciting proper N-current modulation after GPCR stimulation. Overall, the data presented in this dissertation provides a mechanistic approach into examining modulation of N-current by different GPCRs via two different signaling pathways as well as the role CaVβ subunits serve in each modulatory pathway.

No description available.

L’oxyde de zinc ZnO, est un semiconducteur II-VI très prometteur pour les applications en opto-électronique dans le domaine UV, notamment pour la réalisation de dispositifs électroluminescents (LED). Les potentialités majeures du ZnO pour ces applications résident notamment dans sa forte liaison excitonique (60 meV), sa large bande interdite directe (3.4 eV), la disponibilité de substrats massifs de grand diamètre ainsi que la possibilité de réaliser des croissances épitaxiales de très bonne qualité en couches minces ou nano structurées (nanofils). Néanmoins, le développement de ces applications est entravé par la difficulté de doper le matériau de type p. L'impureté permettant d'obtenir une conductivité électrique associée à des porteurs de charges positifs (trous), et donc la réalisation de jonctions pn à base de ZnO, n'a pas encore été réellement identifiée. C'est pourquoi une des étapes préliminaires et nécessaires à l'obtention d'un dopage de type p fiable et efficace, réside dans la compréhension du dopage résiduel de type n, ainsi que des phénomènes de compensation et de passivation qui sont mis en jeu au sein du matériau. La maîtrise de la nature des contacts (ohmique ou Schottky) sur différentes surfaces d'échantillons de ZnO nous a permis dans ce but de mettre en œuvre à la fois des mesures de transport (résistivité et effet Hall) et des mesures capacitives (capacité-tension C(V), Deep Level Transient Spectroscopy (DLTS) et Spectroscopie d'admittance).Dans un premier temps, nous avons donc cherché à comprendre de manière approfondie les propriétés électriques du ZnO massif. Nous avons ainsi étudié le rôle des défauts profonds et peu profonds sur la conductivité des échantillons, aux travers de différents échantillons massifs obtenus par synthèse hydrothermale ou par croissance chimique en phase vapeur. Nous avons également étudié l'impact de la température de recuits post-croissance, sur les propriétés de transport des échantillons. A la lumière des résultats obtenus sur le dopage résiduel de type n des échantillons de ZnO massifs, nous avons ensuite procédé à différents essais de dopage de type p du ZnO par implantation ionique d'azote et par diffusion en ampoule scellée d’arsenic. L'impureté azote a été choisie dans le cadre d'une substitution simple de l'oxygène qui devrait permettre de créer des niveaux accepteurs dans la bande interdite du ZnO. Nous avons également étudié l'impureté arsenic, qui selon un modèle théorique peut former un complexe qui permet d'obtenir un niveau accepteur plus proche de la bande de valence que le niveau. Outres les études réalisées sur les échantillons de ZnO massif et les essais de dopage de type p, nous avons également étudié les propriétés électriques d'échantillons de ZnO monocristallins sous forme de couches minces obtenues par croissance en phase vapeur d’organométalliques, dopées intentionnellement ou non. Les corrélations entres les mesures SIMS et C(V) nous ont permis notamment de mettre en évidence une diffusion et un rôle très importante de l'aluminium sur les propriétés électriques des couches minces de ZnO épitaxiées sur substrat saphir.Dans le cadre de cette thèse nous avons réussi à clarifier les mécanismes du dopage de type n, intentionnel ou non intentionnel, dans le ZnO monocristallin. Nous avons également identifié les impuretés et les paramètres de croissance importants permettant d'obtenir un dopage résiduel de type n le plus faible possible dans les couches épitaxiées. Cette maitrise du dopage résiduel de type n est une étape préliminaire indispensable aux études de dopage de type p car elle permet de minimiser la compensation des accepteurs introduits intentionnellement. Cette approche du dopage sur des couches minces de ZnO dont le dopage résiduel de type n est très faible apparait comme une voie très prometteuse pour surmonter les problèmes d'obtention du dopage de type p. / Zinc oxide (ZnO) is a II-VI semiconductor which appears as a very promising material for UV opto-electronic applications, in particular for the production of light emitting devices (LED). For these applications, ZnO presents strong advantages as a high exciton binding energy (60 meV ), a wide direct band gap (3.4 eV), the availability of large diameter bulk substrates for homoepitaxial growth of high quality thin films or nanostructures. However, the development of these applications is hampered by the difficulty to dope ZnO p-type. The impurity leading to an electrical conductivity associated with positive charge carriers (holes), and therefore the production of ZnO pn junctions have not yet been really identified.In this thesis we have studied the physical mechanisms that govern the electrical properties of ZnO single crystal and epilayers. The control of contacts (ohmic or Schottky) on different ZnO surfaces allowed us to carry out both transport measurements (resistivity and Hall effect) and capacitance measurements (C(V), Deep Level Transient Spectroscopy (DLTS) and admittance spectroscopy).At first, we have studied the role of deep and shallow defects on the n-type conductivity of bulk ZnO samples obtained by Hydrothermal synthesis (HT) or by Chemical Vapor Transport (CVT). We also investigated the impact of post-growth annealing at high temperature under oxygen atmospheres on the transport properties of samples. Thanks to the previous results on the residual n-type doping, we have reported on several attempts to obtain p-type ZnO. We have discussed the potential of different candidates for the achievement of p-type doping and present our tentative experiments to try and demonstrate the reality, the ability and the stability of p-type doping by nitrogen implantation and arsenic diffusion. The nitrogen impurity has been chosen for oxygen substitution, which should allow the creation of acceptor levels in the ZnO band gap. We also studied arsenic as a potential p-type dopant, according to a model whereby arsenic substitutes for oxygen and, if associated with two zinc vacancies, forms a complex with a shallower ionization energy than in the case of direct oxygen substitution.In addition to the studies on bulk ZnO samples and attempts on p-type doping, we have also studied the electrical properties of thin film ZnO samples obtained by Metal Organic Vapor Phase Epitaxy, either intentionally or unintentionally doped. Correlations between SIMS and C(V) measurements allowed us to highlight especially the importance of aluminum as a residual impurity in epitaxial layers grown on sapphire substrates.In this thesis we have clarified intentional or unintentional n-type doping mechanisms in ZnO single crystal samples. We have also identified impurities and growth parameters responsible for the residual n-type doping. This understanding is a crucial and preliminary step for understanding the doping mechanisms at stake in this material and is also necessary to achieve stable p-type conductivity, which is still the main challenge for the realization of optoelectronic devices based on ZnO.

Process variability is a major challenge for the design of nano scale MOSFETs due to fundamental physical limits as well as process control limitations. As the size of the devices is scales down to improve performance, the circuit becomes more sensitive to the process variations. Thus, it is necessary to have a device model that can predict the variations of device characteristics. Statistical modeling method is a potential solution for this problem. The novelty of the work is that we connect BSIM parameters directly to the underlying process parameters. This is very useful for fabs to optimize and control the specific processes to achieve certain circuit metric. This methodology and framework is extendable to any future technologies, because we used a device independent, but process depended frame work In the first part of this thesis, presents the design of nominal MOS devices with 28 nm physical gate length. The device is optimized to meet the specification of low standby power technology specification of International Technology Roadmap for Semiconductors ITRS(2012). Design of experiments are conducted and the following parameters gate length, oxide thickness, halo concentration, anneal temperature and title angle of halo doping are identified as the critical process parameters. The device performance factors saturation current, sub threshold current, output impendence and transconductance are examined under process variabilty. In the subsequent sections of the thesis, BSIM parameter extraction of MOS devices using the software ICCAP is presented. The variability of the spice parameters due to process variation is extracted. Using the extracted data a new BSIM interpolated model for a variability aware circuit design is proposed assume a single process parameter is varying. The model validation is done and error in ICCAP extraction method for process variability is less than 10% for all process variation condition in 3σ range. In the next section, proposes LUT model and interpolated method for a variability aware circuit design for single parameter variation. The error in LUT method for process variability reports less than 3% for all process variation condition in 3σ range. The error in perdition of drain current and intrinsic gain for LUT model files are very close to the result of device simulation. The focus of the work was to established effective method to interlink process and SPICE parameters under variability. This required generating a large number of BSIM parameter ducks. Since there could be some inaccuracy in large set of BSIM parameters, we used LUT as a golden standard. We used LUT modeling as a benchmark for validation of our BSIM3 model In the final section of thesis, impact of multi parameter variation of the processes in device performance is modelled using RSM method; the model is verified using ANOVA method. Models are found to be sufficient and stable. The reported error is less than 1% in all cases. Monte Carlo simulation confirms stability and repeatability of the model. The model for random variabilty of process parameters are formulated using BSIM and compared with the LUT model. The model was tested using a benchmark circuit. The maximum error in Monte Carlo simulation is found to be less than 3% for output current and less than 8% for output impedance.

L’effet de la transparence induite électromagnétiquement est observée à l’aidede cellules nanométriques et de cellules micrométriques. La résonance EIT avec de bons paramètres (fort contraste et faible largeur du signal à mi-hauteur) est obtenue dans des cellules étroites. L' éclatement de la résonance EIT dans un champ magnétique est observé pour les raies D1 du 85Rb et 87Rb. Nous présentons un modèle théorique qui explique la dépendance du déplacement en fréquence des composantes de la résonance EIT en fonction de l’intensité du champ magnétique. Les résultats théoriques et expérimentaux sont comparés et démontrent un bon accord.Pour la première fois une résonance de type N est obtenue dans une micro-cellule. Nous obtenons de bons paramètres (fort contraste et faible largeur du signal à mi-hauteur) dela résonance N à l’aide d’une micro-cellule. Cela nous permet d’observer le comportement d’une résonance N dans un champ magnétique. L’éclatement de la résonance N dans unchamp magnétique est observé pour les raies D1 du 85Rb et 87Rb. Nous présentons les calculs théoriques qui expliquent la dépendance du déplacement en fréquence des composantes dela résonance N en fonction de l’intensité du champ magnétique. Les résultats théoriques et expérimentaux sont comparés et démontrent un bon accord. Le comportement de la résonance N en régime hyperfin Paschen-Back est présenté et expliqué. Enfin une comparaison des résonances EIT et N est faite / The effect of electromagnetically induced transparency is observed, using nanocelland microcell. The EIT-resonance with good parameters (high contrast and small FWHM) is obtained in thick cells. The EIT-resonance splitting in magnetic field is observed for the cases of D1-line of 85Rb and 85Rb. The theoretical model, explaining the EIT-resonance components frequency shift dependence on magnetic field strength is presented. The theoretical and experimental results are compared and good agreement is shown. Also the EIT-resonance behavior in hyperfine Paschen-Back regime is presented and explained. For the first time the N-type resonance in microcell is observed. Good parameters of theN-type resonance in microcell are obtained. It allows us to observe the N-type resonance behavior in magnetic field. The N-resonance splitting in magnetic field is observed for the cases of 85Rb and 85Rb. The theoretical calculations of the N-resonance components frequency shift dependence on magnetic field is presented. The theoretical and experimental results are compared and good agreement is shown. Also the N-resonance behavior in hyperfine Paschen-Back regime is presented and explained. Simultaneous observation of N- and EIT-resonance is shown. Comparison of EIT- and N-resonance is made