In this work, a fully differential Operational Amplifier (OpAmp) with high Gain-Bandwidth (GBW), high linearity and Signal-to-Noise ratio (SNR) has been designed in 65nm CMOS technology with 1.1v supply voltage. The performance of the OpAmp is evaluated using Cadence and Matlab simulations and it satisfies the stringent requirements on the amplifier to be used in a 12-bit pipelined ADC. The open-loop DC-gain of the OpAmp is 72.35 dB with unity-frequency of 4.077 GHz. Phase-Margin (PM) of the amplifier is equal to 76 degree. Applying maximum input swing to the amplifier, it settles within 0.5 LSB error of its final value in less than 4.5 ns. SNR value of the OpAmp is calculated for different input frequencies and amplitudes and it stays above 100 dB for frequencies up to 320MHz. The main focus in this work is the OpAmp design to meet the requirements needed for the 12-bit pipelined ADC. The OpAmp provides enough closed-loop bandwidth to accommodate a high speed ADC (around 300MSPS) with very low gain error to match the accuracy of the 12-bit resolution ADC. The amplifier is placed in a pipelined ADC with 2.5 bit-per-stage (bps) architecture to check for its functionality. Considering only the errors introduced to the ADC by the OpAmp, the Effective Number of Bits (ENOB) stays higher than 11 bit and the SNR is verified to be higher than 72 dB for sampling frequencies up to 320 MHz.

In this thesis, the circuits are designing with TSMC.18£gm CMOS process and 1.8V of supply voltage. The speed and resolution of ADC are 150MS/s and 12-bits individually. In order to achieve a high speed, low power consumption pipelined ADC. The proposed pipelined stage is replaced Flash ADC by SAR ADC and add an extra comparator to determine one additional bit in sampling phase of pipelined stage. This technique reduces large number of pipelined stage and opamp which is energy-hungry in the pipelined ADC. Second, the SAR ADC provides inherent sample-and-hold mechanism so that the front-end sample-and-hold amplifier circuit is non-need. Third, the SAR ADC can achieve rail-to-rail input signal swing and improve the conversion accuracy rather than Flash ADC. The dynamic comparator is used for lower power consumption for whole circuit. Furthermore, this pipelined ADC implement under a supply voltage as low as 1.8V. The bootstrapped switch is used for controlling the sampling in the front-end. It can reduce the impacts of linearity for operating under low supply voltage. The operation amplifier implement by the partially switched-opamp technique to reduce more power consumption. Finally, the output codes are translated by digital correction circuit, it enhance the comparators input offset error tolerance.

No description available.

Amorphous Oxide semiconductors have gained large interest in the display industry owing to their high carrier mobilities and low fabrication costs. In this thesis, n-channel solution based zinc-tin oxide (ZTO) thin-film transistors (TFTs) are studied from a circuit design perspective. The study includes an iterative process of circuit design, layout and test procedure of the fabricated devices in the lab. The device models used in circuit simulations are refined following the data fed back from each of these iterations which has enabled more accurate design of complex circuits using ZTO devices. The requirement and development of a physical compact model for performing accurate and predictive circuit simulations has been presented. The use of ZTO devices in low cost, transparent and flexible electronic applications has been investigated through the study of basic circuit blocks such as amplifiers, ring oscillators, inverters and a four stage Operational Amplifier. / text

<p>QC 20140609</p>

This work analyzes tuning capabilities of different fully integrated active filter topologies. Work only deals with continuous time active filters. Topologies described in this work differ in type of active element and in method of frequency tuning. Techniques of tunning are proved on second order low pass filter. Filter topologies are compared from tunning capabilities and from point of total harmonic distortion. The main building block of all filters is integrator.

Using bandgap engineering, silicon-germanium (SiGe) BiCMOS technology effectively combines III-V transistor performance with the cost and integration advantages associated with CMOS manufacturing. The suitability of SiGe technology for cryogenic and radiation-intense environments is well known, yet SiGe has been generally overlooked for applications involving extreme high temperature operation. This work is an investigation into the potential capabilities of SiGe technology for operation up to 300°C, including the development of packaging and testing procedures to enable the necessary measurements. At the device level, SiGe heterojunction bipolar transistors (HBTs), field-effect transistors (FETs), and resistors are verified to maintain acceptable functionality across the temperature range, laying the foundation for high temperature circuit design. This work also includes the characterization of existing bandgap references circuits, redesign for high temperature operation, validation, and further optimization recommendations. In addition, the performance of temperature sensor, operational amplifier, and output buffer circuits under extreme high temperature conditions is presented. To the author's knowledge, this work represents the first demonstration of functional circuits from a SiGe technology platform in ambient temperatures up to 300°C; furthermore, the optimized bandgap reference presented in this work is believed to show the best performance recorded across a 500°C range in a bulk-silicon technology platform.

Over the last decade, electronics operating at high temperatures have been increasingly demanded to support in situ sensing applications such as automotive, deep-well drilling and aerospace. However, few of these applications have requirements above 460 °C, as the surface temperature of Venus, which is a specific target for the seismic sensing application in this thesis. Due to its wide bandgap, Silicon Carbide (SiC) is a promising candidate to implement integrated circuits (ICs) operating in such extreme environments. In this thesis, various analog and mixed-signal ICs in 4H-SiC bipolar technology for high-temperature sensing applications are explored, in which the device performance variation over temperatures are considered. For this purpose, device modeling, circuit design, layout design, and device/circuit characterization are involved. In this thesis, the circuits are fabricated in two batches using similar technologies. In Batch 1, the first SiC sigma-delta modulator is demonstrated to operate up to 500 °C with a 30 dB peak SNDR. Its building blocks including a fully-differential amplifier, an integrator and a comparator are characterized individually to investigate the modulator performance variation over temperatures. In the succeeding Batch 2, a SiC electromechanical sigma-delta modulator is designed with a chosen Si capacitive sensor for seismic sensing on Venus. Its building blocks including a charge amplifier, a multiplier and an oscillator are designed. Compared to Batch 1, a smaller transistor and two metal-interconnects are used to implement higher integration ICs in Batch 2. Moreover, the first VBIC-based compact model featured with continuous-temperature scalability from 27 to 500 °C is developed based on the SiC transistor in Batch 1, in order to optimize the design of circuits in Batch 2. The demonstrated performance of ICs in Batch 1 show the feasibility to further develop the SiC readout ICs for seismic sensor system operating on Venus. / <p>QC 20170911</p>

With the explosive development of wireless communication systems the specifications of the supporting hardware platforms have become more and more demanding. According to the long term goals of the industry, future communications systems should integrate a wide variety of standards. This leads to the idea of software defined radio, implemented on fully reconfigurable hardware.Among other reconfigurable hardware blocks, suitable for the software radio concept, an outstanding importance belongs to the reconfigurable filters that are responsible for the selectivity of the system. The problematic of filtering is strictly connected to the architecture chosen for a multi-mode receiver realization. According to the chosen architecture, the filters can exhibit low pass or band pass frequency responses.The idea of reconfigurable frequency parameters has been introduced since the beginning of modern filtering applications due to the required precision of the frequency response. However, the reconfiguration of the parameters was usually done in a limited range around ideal values. The purpose of the presented research is to transform the classical filter structures with simple self-correction into fully reconfigurable filters over a wide range of frequencies. The ideal variation of the frequency parameters is continuous and consequently difficult to implement in real circuits. Therefore, it is usually sufficient to use a discrete programming template with reasonably small steps.There are several methods to implement variable frequency parameters. The most often used programming templates employ resistor and capacitor arrays, switched according to a given code. The low pass filter implementation proposed in this work uses a special switching template, optimized for a quasi-linear frequency variation over logarithmic axes. The template also includes the possibility to compensate errors caused by component tolerances and temperature. Another important topic concerns the implementation of programmable band pass filters, suitable for IF sampling receivers. The discussion is centered on the feasibility and the flexibility of different band pass filter architectures. Due to the high frequency requirements, the emphasis lays on filters that employ transconductance amplifiers and capacitors. / Die rasch fortschreitende Entwicklung drahtloser Kommunikationssysteme führt zu immer anspruchsvolleren Spezifikationen der diese Systeme unterstützenden Hardwareplattformen. Zukünftige Kommunikationssysteme sollen übereinstimmend mit den längerfristigen Zielen der Industrie verschiedene Standards integrieren. Dies führt zu der Idee von vollständig rekonfigurierbarer Hardware, welche mittels Software gesteuert wird.Inmitten anderer rekonfigurierbarer Hardwareblöcke, die für das Software Radio Konzept geeignet sind, besitzen die steuerbaren Filter, welche wesentlichen Einfluss auf die Selektivität des Systems haben, eine enorme Bedeutung. Die Filterproblematik ist eng mit der gewählten Architektur der standardübergreifenden Empfängerrealisierung verknüpft. Die Filter können entsprechend der ausgesuchten Architektur Tiefpass- oder Bandpasscharakter annehmen.Die Idee rekonfigurierbarer Frequenzparameter wurde bereits mit Beginn moderner Filteranwendungen auf Grund geforderter Frequenzganggenauigkeit umgesetzt. Jedoch wurde die Parameterrekonfiguration üblicherweise nur in einem begrenzten Bereich um die Idealwerte herum vorgenommen. Das Ziel der vorgestellten Forschungsarbeit ist es, diese klassischen Filterstrukturen mit einfacher Selbstkorrektur in über große Frequenzbereiche voll rekonfigurierbare Filter zu transformieren. Idealerweise werden die Frequenzparameter kontinuierlich variiert weswegen sich die Implementierung in reellen Schaltkreisen als schwierig erweist. Deshalb ist es üblicherweise ausreichend, ein diskretes Steuerschema mit kleinen Schrittweiten zu verwenden.Es gibt verschiedene Methoden, variable Frequenzparameter zu implementieren. Die meisten Schemata verwenden Widerstands- und Kondensatorfelder, die entsprechend eines Kodes geschaltet werden. Die in dieser Arbeit vorgestellte Implementierung eines Tiefpassfilters nutzt ein spezielles Umschaltschema, welches für die quasi-lineare Frequenzvariation bei Darstellung über logarithmischen Axen optimiert wurde. Es beinhaltet weiterhin die Möglichkeit, Fehler zu kompensieren, die durch Bauelementtoleranzen und Temperaturschwankungen hervorgerufen werden.Ein weiteres interessantes Thema betrifft die Implementierung steuerbarer Bandpassfilter, die für Empfänger mit Zwischenfrequenzabtastung geeignet sind. Die Betrachtung beschränkt sich hierbei auf die Durchführbarkeit und Flexibilität verschiedener Bandpassfilterarchitekturen. Auf Grund hoher Frequenzanforderungen liegt der Schwerpunkt auf Filtern, die auf Transkonduktanzverstärkern und Kondensatoren basieren.

Cette thèse s’inscrit dans le domaine de la modélisation des circuits analogiques et mixtes.Le travail part d’une problématique industrielle concernant les circuits électroniques utilisés dansles systèmes de forage pétrolier pour des besoins d’instrumentation et mesures. Ce travail de recherche concerne les circuits du front-end analogique que nous trouvons dans cette application industrielle. Nous examinons et nous essayons de trouver des modèles pour décrire l’effet des hautes températures sur les circuits électroniques dans un forage pétrolier. Ces circuits font partie des circuits industriels conventionnels. Ils ont généralement une température maximale de fonctionnement qui ne dépasse pas 125°C. Même si la température modifie le comportement de ces circuits, il existe des techniques d’adaptation qui permettent de compenser l’effet de la température sur ces circuits. Cependant, pour bien réussir la phase de la conception, il faut d’abord bien caractériser le comportement des différents circuits industriels utilisés en haute température. Il faut également trouver des modèles exacts qui décrivent le comportement de ces circuits en haute température. Or nous savons que la majorité des circuits industriels analogiques et mixtes sont décrits par des modèles de type SPICE. Par un choix de l’entreprise Schlumberger, notre partenaire industriel qui a financé ce travail, nous nous sommes intéressés dans notre étude à un composantspécifique présent dans la majorité des circuits analogiques et mixtes d’instrumentation :l’amplificateur opérationnel (l’AOP).Le travail commence par une étude des spécifications du circuit ainsi que le modèle SPICE.Une étude de la structure de ce modèle et sa simulation ont montré la non-précision du modèle audelàde 125°C. L’étude de validité du modèle a concerné le paramètre de la tension de décalage etle paramètre taux de rejection du mode commun. Nous avons interprété la différence des résultatsentre les mesures et la simulation de la tension de décalage. Nous avons constaté la limitation quereprésente l’approche structurelle par modélisation SPICE. Pour cette raison, nous avonssélectionné l’approche de modélisation comportementale pour les différents avantages qu’elleprésente. Ces avantages répondent à nos besoins et conviennent les mesures qui ont été effectuées.Nous avons sélectionné le langage VHDL-AMS et l’environnement Cadence ADVanceMS. Pourdéveloppé les modèles, nous avons alors énuméré les différents paramètres de performance d’unAOP. Nous avons validé la représentation de chaque paramètre par un circuit de test approprié.Dans un deuxième temps, nous avons approximé la variation de ces paramètres en température pardes équations polynomiales et exponentielles pour développer le modèle précis en HT. Le modèlea été validé par un circuit de test similaire au circuit expérimental. De bons résultats ont ététrouvés. L’erreur moyenne entre simulation VHDL-AMS et mesures n’a pas dépassé 3,11%. Dansle denier chapitre, nous avons simulé des circuits d’une chaine d’instrumentation. Nous avonssimulé l’effet de la température sur un capteur piézo-résistif (pont de Wheatstone). Trois architectures d’un amplificateur d’instrumentation ont été également modélisées e en se basant surle modèle VHD-AMS de l’AOP. / This work is dealing with the modelling of analogue and mixed signal circuits. Moreprecisely, we focus on modelling the circuits of an analogue front-end which is used in down-holedrilling industry for instrumentation and measurement purposes. This research had as a goal tomodel the temperature increasing effect in the behaviour of each circuit of the considered frontend.The studied circuits belong to the family of “conventional” circuits. Most of these circuitsoperate in a temperature which does not exceed 125°C. Even if the behaviour of the circuit changesdue to an increasing of the temperature, there are some well-know techniques that enable thecompensation of such effects. However, in order to obtain a precise simulation in the design phase,it is very important to have accurate models that describe the temperature increasing effect. Asmost of the commercial circuits models are written in SPICE, it is necessary first to review theaccuracy of SPICE models in high temperature (HT). This work focus on a specific circuit: theoperational amplifier (opamp). This device is present in many instrumentation circuits. Obtainingan accurate op-amp model in HT will help us develop accurate models of these circuits byconsidering their architectural description which is based on the opamp model.The work starts with the study of the structure of the SPICE model of the considered opamp.This study enables us to confirm the non-validity of the SPICE model in HT. The validity studyconsists in comparing the SPCE simulation results of two parameters (the voltage offset and thecommon mode rejection ratio) to measurement results. Moreover, we present an interpretation tothe difference that was observed in this comparison. After comparing different modellingapproaches, we select the behavioural modelling one. The VHDL-AMS was used to develop thenew precise opamp model in HT. The simulation is performance in Cadence/ADVanceMSenvironment. The representation of each opamp parameter is validated by a specific circuit. Thismodel is developed in two steps. In the first step, we develop an opamp model in which there is noconsideration of the temperature effect. In the second step, dependence of each parameter to thetemperature is described by a polynomial or exponential function. This function is the result of thefitting process of the measurement results. These equations are inserted in the VHDL-AMS model.All parameters are again validated in each temperature. The test-circuit is the same circuit used inthe experimental test of the opamp parameters. The average error between measurement andsimulation does not exceed 3.11%. In the last chapter, we simulate some circuits of the theanalogue front-end of an acquisition system. We simulate for example the effect of the temperatureeffect on the accuracy of a Wheatstone bridge. Three architecture of an instrumentation amplifierwere also modelled and simulated in different temperature of [20°C, 220°C] in the basis of thedeveloped opamp model.