Made available in DSpace on 2016-06-02T20:15:30Z (GMT). No. of bitstreams: 1 5738.pdf: 3104025 bytes, checksum: 27f8126e91dc4b23ddd37a2e733a23fa (MD5) Previous issue date: 2014-01-29 / Universidade Federal de Sao Carlos / In the present thesis, we realize a computational modeling of semiconductor structures based on multiple quantum wells with filter barriers and on quantum wells with semiconductor diluted magnetic layers. We numerically solve the time-dependent Schrödinger s equation within the effective mass approximation, using the Split Operator method. Through the time evolved wave functions we access the dynamics quantities as the light assisted couplings of the states, in which the light is described by the inclusion of an oscillating electric field in the Hamiltonian. Then we determine the probabilities of absorption, oscillator strengths of the intersubband transitions induced by the light. Moreover we analyze the transmission probabilities and, in special, the system s photocurrent. The eigenstates and the eigenfunctions of the stationary states are also obtained within the method by simply making an imaginary time evolution. In the first work, the photocurrent of a multiple quantum well structure with filter barriers modulating the continuum above the wells was analyzed as a function of the applied bias. We find out an interesting dependence of the photocurrent with the applied field, as a differential negative photoconductance controlled by the field. We attribute this negative conductance to the interaction between the localized and extended states in the continuum, expressed by anticrossings between these states and the enhancement of the photocurrent at the crossings by the Landau-Zener-Stückelberg-Majorama like transitions. In the second work, it was evaluated the spin polarized photocurrent arising from quantum well s structures of GaMnAs, under light, electric and magnetic fields of few teslas. The study shows the existence of spectral domains in the THz ranges for which the proposed structure is strongly spin selective. For such photon frequencies, the photocurrent is spin polarized and the application of the external electric field reverts the polarization s signal. This behavior suggests the possibility of conveniently simple switching mechanisms. The physics underlying these results is studied and understood in terms of the spin-dependent coupling strengths emerging from the particular potential profiles of the heterostructures. We present two additional works related to the main ones. In the first additional one, we evaluated the dark current of the multiple quantum well structure with and without filter barriers. For doing this, we add totally the transmission probability through the structure in the Levine s model for the dark current. We observe that dark current is considerably reduced for the structure with the filter barriers when compared to the structure without these barriers. In the second additional work, we calculate the photocurrent in a ZnMnSe structure. We observe the generation of a spin polarized photocurrent controlled by the external electric field, as in the case of the GaMnAs structures. / Na presente tese, realizamos a modelagem computacional de estruturas semicondutoras baseadas em poços quânticos múltiplos com barreiras de filtro e em poços quânticos com camadas de material semicondutor magnético diluído. Para tanto, resolvemos numericamente a equação de Schrödinger dependente do tempo na aproximação de massa efetiva, por meio da evolução temporal das funções de onda do sistema, utilizando o chamado método do Split- Operator. Com as funções de onda evoluídas no tempo temos acesso às variáveis dinâmicas do sistema, como os acoplamentos entre os estados pela presença de luz, descrita na forma de um campo elétrico oscilante. Determinamos assim as probabilidades de absorção, forças de oscilador das transições intersubbandas geradas por essa excitação com luz, as probabilidades de transmissão através da estrutura e, em especial, o espectro de fotocorrente proveniente desses sistemas semicondutores. As autofunções e as autoenergias dos estados estacionários dos sistemas são obtidas pelo mesmo método realizando a evolução em tempo imaginário. No primeiro trabalho, a fotocorrente da estrutura de poços quânticos múltiplos com barreiras de filtro foi analisada em função do campo elétrico aplicado à estrutura. Foi encontrada uma dependência da fotocorrente com o campo elétrico bastante interessante, na forma de uma fotocondutância negativa controlada pelo campo elétrico aplicado à heteroestrutura. Atribuímos essa condutância negativa à interação entre estados localizados e estendidos no continuo se manifestando na forma de anticrossings e o aumento da fotocorrente para os valores de campo elétrico nos quais ocorrem esses crossings foi associado a transições de dois níveis do tipo Landau-Zener-Stückelberg-Majorama. No segundo trabalho, foi calculada a fotocorrente polarizada em spin de estruturas de poços quânticos de GaMnAs, na presença de um campo elétrico varável e um campo magnético de poucos teslas. O estudo mostrou a existência de domínios espectrais na região de THz do espectro eletromagnético, para os quais as estruturas propostas são altamente seletivas em spin. Para tais frequências, encontramos que a fotocorrente é polarizada em spin e a aplicação do campo elétrico é capaz de reverter forma muito eficiente o sinal da polarização. O comportamento observado sugere a possibilidade de mecanismos simples de controle sobre a fotocorrente e a Física por trás de tais efeitos foi entendida em termos dos acoplamentos dependentes de spin dos estados da estrutura, emergentes do perfil de potencial particular das heteroestruturas. Apresentamos dois trabalhos adicionais diretamente relacionados aos trabalhos principais. No primeiro trabalho, calculamos a corrente de escuro proveniente da estrutura de poços quânticos múltiplos com e sem barreiras de filtro, adicionando de forma integral a probabilidade de transmissão através da estrutura no modelo de Levine que determina essa corrente. Observamos que a presença das barreiras de filtro diminui significativamente a corrente de escuro dessa estrutura no regime de altos valores de campo elétrico. No segundo trabalho adicional, foi calculada a fotocorrente de uma estrutura de PQ com camada DMS, composta por ZnMnSe. Observamos a possibilidade de controle da polarização de spin com o campo elétrico, assim como no caso da estrutura composta de GaMnAs.

Fundação de Amparo a Pesquisa do Estado de Minas Gerais / The recent progress in the manufacturing of semiconductor quantum dots (QD) systems has made possible the coherent control of quantum states in QDs using optical or electrical techniques. Laser pulses have been recently used to coherently coponto quânticontrol the exciton population in QDs. The coherent manipulation of quantum states is a high priority task to the development of quantum information and quantum computation. One particular signature of coherency in quantum systems is the Rabi oscillations, which were recently observed in a few experimental works. Here we theoretically study a system composed of a semiconductor QD, tunnel coupled to electron reservoirs. In the presence of a laser field an electron-hole pair is created in the QD. An external source-drain (bias) voltage allows electrons and holes to tunnel to the reservoirs. The study was developed via the non-equilibrium Green s function technique. We solve numerically a set of coupled differential equations to the retarded and lesser Green functions. This gives the occupation probabilities of the two levels of the QD and the laserinduced photocurrent as a function of time. We focus our attention on the effects of temperature on the Rabi oscillations. Our main findings encompass a thermal activated Pauli blockade of the Rabi oscillations that can be controlled via the reservoirs temperature. We also discussed the effects of this thermal activation of Pauli blockade on the photocurrent. These results suggest that ability to measure temperatures via quantum coherent signals, thus suggesting the possibility of a new quantum-dot based thermometer. / O recente progresso na fabricação de sistemas de pontos quânticos semicondutores (PQ) tem tornado possível o controle coerente de estados quânticos em PQs utilizando técnicas ópticas ou elétricas. Pulsos de laser têm sido recentemente utilizados para controlar coerentemente a população de éxcitons em PQs. A manipulação coerente de estados quânticos é uma tarefa de alta prioridade para o desenvolvimento da informação e computação quântica. Uma assinatura particular de coerência em estados quânticos são as oscilações de Rabi, as quais foram recentemente observadas em trabalhos experimentais. Neste trabalho estudamos, teoricamente, um sistema composto por um PQ semicondutor, túnel-acoplado a reservatórios de elétrons. Na presença de um campo de laser um par elétron-buraco é criado no PQ. Uma tensão fonte-dreno (bias) permite que elétrons e buracos tunelem para os reservatórios. O estudo foi desenvolvido através da técnica de funções de Green de não-equilíbrio. Resolvemos numericamente um conjunto de equações diferenciais acopladas para as funções de Green retardada e menor. Estas fornecem a probabilidade de ocupação dos dois níveis no PQ e a fotocorrente induzida por laser. Concentramos nossa atenção nos efeitos da temperatura sobre as oscilações de Rabi. Nossos principais resultados incluem um bloqueio de Pauli termicamente ativado na fotocorrente. Estes resultados sugerem a habilidade de medir temperatura via sinais quânticos coerentes, sugerindo, assim, a possibilidade de um novo termômetro baseado em pontos quânticos. / Mestre em Física

Ce travail porte sur l’analyse et l’étude du comportement de circuits intégrés en technologie CMOS soumis à un impact laser. Une méthodologie d’implémentation d’un impact laser a été développée et améliorée. Ainsi, elle est applicable à n’importe quelle description électrique d’un circuit CMOS, qu’il soit digital ou analogique. Ce procédé est conçu pour permettre aux concepteurs de circuits intégrés pouvant être soumis à des attaques laser, de tester leur circuit en simulation avant leur fabrication et de démontrer leur robustesse.Notre étude s’est focalisée sur le développement d’un outil de simulation intégrant un modèle électrique de l’impact laser sur les transistors MOS afin de reproduire de façon qualitative le comportement du circuit face à un impact laser (attaque semi-invasive en face arrière du circuit), et ce quelques soient ses propriétés physiques.Une première partie d’état de l’art est consacrée à la synthèse des différentes attaques sur circuits sécurisées que l’on peut rencontrer dans le domaine de la microélectronique, telles que les attaques semi-invasives, non invasives ou invasives par exemple. Une seconde partie théorique dédiée à l’interaction laser-silicium au niveau physique nous permet d’étudier les différents acteurs mis en jeu (propriétés physiques du laser – puissance, diamètre et profil du faisceau), avant de les importer comme paramètres dans le domaine électrique.Cette étude se poursuit alors par l’élaboration d’un modèle électrique et d’une méthodologie de simulation dont le but est de permettre de reproduire le comportement de n’importe quel circuit impacté par un laser. Le flot de modélisation passe ainsi en revue l’ensemble des paramètres contrôlables en entrée, qu’il s’agisse des propriétés physiques du laser, traduites dans le domaine électrique, ou encore de la réalité géométrique du circuit impacté, quel que soit sa complexité. Par ailleurs, la flexibilité de cette approche permet de s’adapter à toute évolution du modèle de l’impact laser en lui-même. Il est ainsi possible de simuler un impact intégrant ou non tout ou partie des phénomènes parasites déclenchés par le photocourant. Enfin, il couvre aussi bien des analyses de comportement dans le domaine statique, que dans celui temporel, où la durée d’impulsion du laser prend toute son importance.Afin de démontrer la cohérence de cette méthodologie face à nos attentes théoriques, le comportement de transistors NMOS, PMOS et un inverseur CMOS ont été étudiés au niveau simulation. Cette étude préliminaire nous a permis de calibrer et de valider notre modèle et sa méthodologie d’utilisation avec la théorie attendue: création d’un photocourant proportionnel au potentiel appliqué sur la jonction de drain et couplé au potentiel photoélectrique ainsi qu’à la surface impactée, déclenchement des bipolaires parasites latéraux, etc…. L’analyse sur un inverseur CMOS bufférisé ou non nous donne encore plus d’informations quant aux analyses dynamiques ou statiques : un impact sur un état statique (0 ou 1) ne peut entraîner que des fautes fonctionnelles, alors qu’un impact sur une transition ralentit ou accélère le signal en sortie, au risque de générer une faute fonctionnelle.Enfin, l’étude de différents circuits complexes sur silicium face à plusieurs types de faisceau laser nous a permis de confronter notre méthodologie à la mesure. Une chaîne d’inverseurs, une bascule de type D, et un circuit de verrouillage ont ainsi été impactés. Les résultats observés en simulation sont cohérents avec la mesure, notamment du point de vue comportemental et fonctionnel. / This present work deals with the analysis and study of the integrated circuits behavior in CMOS technology under laser injection. An implementation methodology of a laser impact has been developed and optimized. The study has been focused on the development of a simulation tool integrating an electrical model of a laser impact on MOS transistor. This allows to reproduce in a qualitative way the behavior of a circuit under laser impact (semi-invasive attack on rear face of the circuit), whatever the physical properties of the laser.A preliminary study allowed us to calibrate a new electrical model and its use methodology based on the expected theory: photocurrent creation proportional to the applied potential on the drain junction and linked to the photoelectrical potential with the impacted area; triggering of the lateral parasitic bipolar transistors.The analysis of different complex circuits on silicon under different kind of laser beam allowed us also to validate the developed tool and its implementation methodology: it will help designers to prevent or predict such behavior of their circuits under laser attack, allowing them to find solutions of countermeasures and thus making their integrated circuits more robust in critical applications.

Ausgangspunkt dieser Arbeit war die Frage, inwieweit die zur Herstellung von Compositmaterialien aus leitfähigen Polymerfilmen (Polythiophen, Polypyrrol) und Metalloxidschichten (anodisch oxidiertes Titan, chemisch oxidiertes Silicium bzw. Aluminium) entwickelte Präparationsmethode auf die Herstellung hybrider Core - Shell - Partikel (Core: Metalloxidpartikel; Shell: leitfähiges Polymer) übertragbar ist. Die erfolgreiche Beschichtung dispergierter Oxidpartikel mit leitfähigen Poly- meren zeigte, dass nicht nur eine analoge Verfahrensweise (Adsorption des Monomers auf der Substratoberfläche und anschließende Zugabe des Oxidationsmittels) verwendet werden konnte, sondern dass bei der Pulverbeschichtung infolge der großen spezifischen Oberfläche der Materialien auch ohne Einsatz spezieller Haftvermittler, hervorragende Schichtqualitäten (hohe Haftfestigkeit, hoher Be- deckungsgrad) erreicht wurden, und die auf diesem Wege hergestellten Verbundmaterialien in Pulverform in beliebiger Menge, Partikelgröße und Zusam-mensetzung verfügbar waren. Der durch die Verkapselung der Oxidteilchen mit intrinsich leitfähigen Polymeren bewirkte enge Kontakt zwischen Polymer- und Oxidphase und die auf diesem Wege realisierte Oberflächenmodifizierung führte zu einem im Vergleich zu den reinen Komponenten wesentlich veränderten Eigenschaftsspektrum. Durch die Herstellung von Compositen waren die leitfähigen Polymere leichter dispergierbar, und konnten kathaphoretisch in guter Qualität, auch auf großen Substratflächen abgeschieden werden. / Starting with the question about the possibility of producing composites based on conducting polymer films (polythiophene, polypyrrole) and metal oxide layers (anodically oxidized titanium, chemical oxidized silicon or aluminium) it was the goal of this work to transfer and modify this method for the preparation of hybrid core - shell - particles (core: metal oxide particle; shell: conducting polymer). By the successfully covering of dispersed oxide particles it was shown, that not only an analogous procedure (adsorption of the monomer on the substrate surface and the following addition of an oxidant) can be used, but that in the case of powder covering because of the high specific surface area of the oxide powders, outstanding layer qualities without using adhesion promotors can be produced. Following this way, powder-like compound materials can be ordered and designed in any quantity, particle size and composition. Through the encapsulation of the oxide particles with intrinsic conducting polymers a narrow contact between the polymer and the oxide phase and a surface modification were made by a very simple way. By this surface modification a totally different behaviour of the composites, compared to their components was realized. The producing of composites allowes a better dispersibility of conducting polymers and their cathaphoretically deposition with a good quality, also on larger substrate surfaces.

Conducting polymer nanocomposites composed of metal oxides and polythiophene was synthesized by chemical polymerization in colloidal suspensions. The electrochemical and photoelectrochemical properties of such nanocomposites have been studied. For these investigations films of nanocomposites were prepared by an electrophoretic deposition process. The deposition process was studied in greater detail and kinetic details were determined. The high voltage electrophoretic deposition process was combined with a quartz crystal microbalance (QCM). Then the films were characterized by cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and photocurrent spectroscopy.

No description available.

FAPEMIG - Fundação de Amparo a Pesquisa do Estado de Minas Gerais / O conhecimento teórico e experimental acumulado nas últimas décadas sobre pontos quânticos semicondutores (PQs) impulsiona o surgimento de um grande número de propostas atuais de utilizá-los em sistemas híbridos. A habilidade de controlar suas propriedades optoeletrônicas, bem como o domínio de sofisticadas técnicas de fabricação, tornaram-os candidatos ideais para formar junções com supercondutores (SCs), cujas características individuais são também notáveis. Essas junções podem ser simples, com um único PQ acoplado a um SC, ou múltiplas: a conexão de dois terminais SCs através de um PQ (junção tipo Josephson) e a junção de dois PQs através de um SC. Esta última forma um separador de pares de Cooper, dispositivo sugerido como fonte de partículas emaranhadas, que depende fundamentalmente da ocorrência de reflexão de Andreev cruzada (CAR) nas interfaces da junção. Junções de PQs com SCs e com supercondutores topológicos também tem sido propostas em sistemas de dois níveis formando qubits para a computação quântica trivial e topológica. Embora o estudo das junções PQ-SC esteja em evidência atualmente, a revisão da literatura mostra que a análise do regime transiente foi pouco explorada. Por isso, abordamos neste trabalho o transporte de cargas em uma junção PQ-SC-PQ com resolução temporal. Utilizando técnicas de função de Green de não-equilíbrio, particularmente, o formalismo de Kadanoff-Baym, escrevemos um conjunto de equações diferenciais acopladas, solucionado numericamente. Analisando as oscilações de Rabi que surgem na evolução temporal da corrente elétrica e das ocupações dos PQs, fomos capazes de identificar assinaturas de mecanismos de espalhamento através da junção, isto é, o tunelamento direto e a CAR. Adicionalmente, propusemos a expansão deste sistema pela sua inserção na estrutura de um fotodiodo, aplicando luz laser sobre um dos PQs. Os resultados mostram que ocorre a separação dos níveis opticamente excitados em dubletos de Autler-Townes, para acoplamentos fracos entre os PQs. Consequentemente, é observada a ocorrência de CAR, mediada pelo laser aplicado, através dos níveis que compõe o dubleto. Os resultados tem dependência também com a tensão fonte-dreno aplicada ao dispositivo, que pode estar no limite de bias alta (HB) ou zero (ZB). Este é o primeiro trabalho a analisar a separação de pares de Cooper assistida por fótons em uma junção PQ-SC-PQ, em regime de não-equilíbrio. Embora os resultados experimentais ainda sejam escassos, a inclusão de um SC em um fotodiodo de PQs híbrido permite novos mecanismos de formação de fotocorrente, abrindo novas possibilidades de aplicações desse sistema. / The theoretical and experimental knowledge accumulated in the last decades on semiconductors quantum dots (QDs) impulses the emergence of many current proposals for using them in hybrid systems. The ability to control their optoelectronic properties, as well as the control of fabrication techniques, made them the perfect candidates to compose junctions with superconductors (SCs), whose individual characteristics are also remarkable. These junctions can be simple, with a single QD coupled to a SC, or multiple: a connection of two superconducting terminals through a QD (a Josephson-like junction) and the junction of two QDs through a SC. The latter is known as a Cooper-pairs splitter, a device suggested as a source of entangled particles, for which is required the occurrence of crossed Andreev reflection (CAR) on the interfaces of the junction. Junctions of QDs with SCs and with topological SCs have also been proposed in two-level systems as qubits for both trivial and topological quantum computation. Despite the study of QD-SC junctions being currently in evidence, the literature review shows that the analysis of transient regime was little explored. Therefore, we address in this work the topic of time-dependent charge transport in a QD-SC-QD junction. By using non-equilibrium Green functions techniques, particularly, the Kadanoff-Baym formalism, we write down a set of coupled differential equations, which is numerically solved. Examining the Rabi oscillations that appears on the time evolution of electric current and QDs occupations, we were able to identify signatures of the scattering mechanisms through out the junction, i. e., direct tunnelling and CAR. Additionally, we propose to use this system as a photodiode, with the aid of a laser beam over one of the QDs. The results show the splitting of the optically excited states in Autler- Townes doublets, for a weak coupling between the QDs. Hence, CAR mediated by the applied laser was observed through the energy levels that compose the doublet. The results depend also with the source-drain potential applied to the device, which can be high bias (HB) or zero bias (ZB). The present work is the first to analyse the splitting of Cooper pairs assisted by photons in a QD-SC-QD junction, in nonequilibrium regime. Although the experimental results are still sparse, the inclusion of a SC in a QD hybrid photodiode allows new mechanisms of photocurrent formation, creating possibilities in future applications. / Tese (Doutorado)

Solution-processed lead sulfide quantum dots (PbS QDs) are an excellent candidate for photodetector applications because they exhibit broadband absorption, a wide range of tuneable bandgaps, high stability in air, and mechanical flexibility. However, a crucial criterion for the fabrication of high-performance photodetectors is the selection of the ligands, which can facilitate charge carrier transport between the PbS QDs and passivate the surface defects. In this work, the authors have studied the effect of traps on the performance of PbS QD photodetectors that are fabricated using different types of ligands, using intensity-dependent photoresponse dynamics. The best devices with lead halide ligands show a dark current density of 5 × 10−9 A cm−2 at −0.2 V, which is one of the lowest values reported thus far for solution-processed PbS QD-based photodetectors. Moreover, these devices show a high linear dynamic range (≈90 dB) and high detectivity (>1013 Jones), in addition to an f-3 dB of greater than 100 kHz without the application of an external voltage bias at a wavelength of 784 nm. These results suggest that with an appropriate selection of ligands, solution-processed photodetectors with a lower density of traps and a better device performance can be fabricated.