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Development Of Point-Contact Surface Acoustic Wave Based Sensor SystemParmar, Biren Jagadish 06 1900 (has links)
Surface Acoustic Waves (SAW) fall under a special category of elastic waves that need a material medium to propagate. The energy of these waves is confined to a limited depth below the surface over which they propagate, and their amplitudes decay with increasing depth. As a consequence of their being a surface phenomenon, they are easily accessible for transduction. Due to this reason, a lot of research has been carried out in the area, which has resulted in two very popular applications of SAW - SAW devices and in Non-Destructive Testing and Evaluation.
A major restriction of SAW devices is that the SAW need a piezoelectric medium for generation, propagation and reception. This thesis reports the attempt made to overcome this restriction and utilize the SAW on non-piezoelectric substrates for sensing capabilities. The velocity of the SAW is known to be dependent purely on the material properties, specifically the elastic constants and material density. This dependence is the motivation for the sensor system developed in the present work.
Information on the survey of the methods suitable for the generation and reception of SAW on non-piezoelectric substrates has been included in the thesis. This is followed by the theoretical and practical details of the method chosen for the present work - the point source/point receiver method. Advantages of this method include a simple and inexpensive fabrication procedure, easy customizability and the absence of restrictions due to directivity of the SAW generated. The transducers consist of a conically shaped PZT element attached to a backing material. When the piezoelectric material on the transmitter side is electrically excited, they undergo mechanical oscillations. When coupled to the surface of a solid, the oscillations are transferred onto the solid, which then acts as a point source for SAW. At the receiver, placed at a distance from the source on the same side, the received mechanical oscillations are converted into an electrical signal as a consequence of the direct piezoelectric effect. The details of the fabrication and preliminary trials conducted on metallic as well as non-metallic samples are given.
Various applications have been envisaged for this relatively simple sensor system. One of them is in the field of pressure sensing. Experiments have been carried out to employ the acoustoelastic property of a flexible diaphragm made of silicone rubber sheet to measure pressure. The diaphragm, when exposed to a pressure on one side, experiences a varying strain field on the surface. The velocity of SAW generated on the stressed surface varies in accordance with the applied stress, and the consequent strain field generated. To verify the acoustoelastic phenomenon in silicone rubber, SAW velocities have been measured in longitudinal and transverse directions with respect to that of the applied tensile strain. Similar measurements are carried out with a pressure variant inducing the strain. The non-invasive nature of this setup lends it to be used for in situ measurement of pressure.
The second application is in the field of elastography. Traditional methods of diagnosis to detect the presence of sub-epidermal lesions, some tumors of the breast, liver and prostate, intensity of skin irritation etc have been mainly by palpation. The sensor system developed in this work enables to overcome the restrictive usage and occasional failure to detect minute abnormal symptoms. In vitro trials have been conducted on tissue phantoms made out of poly (vinyl alcohol) (PVA-C) samples of varying stiffnesses. The results obtained and a discussion on the same are presented.
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Studies On The Development Of Piezoelectric Thin Flm Based Impact SensorGokhale, Nikhil Suresh 12 1900 (has links)
Sensors is one of the major areas of current research. Thin film micro/nano sensors are gaining attention worldwide, as there is necessity of miniaturization. There are varieties of sensors available by utilizing different materials in bulk and thin film form for measuring parameters like temperature, pressure, flow, humidity etc. Apart from these, there are various sensors available to measure impact force.
Impact sensor offers potential application possibilities in robotics, aerospace, structural & mechanical engineering and related areas. Many physical principles have been explored for the realization of impact sensor. The present thesis reports the efforts made in developing impact sensor using piezoelectric thin film. The necessary brief background information on impact sensors is presented in Chapter 1. This includes the description of available literature on impact sensors and their probable applications. In Chapter 2, a review of the various techniques such as thin film deposition techniques, film thickness measurement techniques, thin film characterization techniques, used in our work are explained in detail. Chapter 3 explains the direct and indirect methods of characterization used for confirming the piezoelectric property of zinc oxide thin films. The detailed experimental work carried out in realizing the impact sensor using piezoelectric thin films is presented in chapter 4. This includes design of the sensor, calibration setup used & the procedure followed and results obtained.
Finally, we present the summary of the work carried out in the thesis, conclusions arrived at and the scope for carrying out further work in the direction of making the sensor more efficient.
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A force and displacement self-sensing method for a mri compatible tweezer end effectorMcPherson, Timothy Steven 05 July 2012 (has links)
This work describes a self-sensing technique for a piezoelectrically driven MRI-compatible tweezer style end effector, suitable for robot assisted, MRI guided surgery. Nested strain amplification mechanisms are used to amplify the displacement of the piezo actuators to practical levels for robotics. By using a hysteretic piezoelectric model and a two port network model for the compliant nested strain amplifiers, it is shown that force and displacement at the tweezer tip can be estimated if the input voltage and charge are measured. One piezo unit is used simultaneously as a sensor and an actuator, preserving the full actuation capability of the device. Experimental validation shows an average of 12% error between the self-sensed and true values.
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Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitrideMuensit, Supasarote January 1999 (has links)
"1998"--T.p. / Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999. / Includes bibliographical references. / Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis. / The present work represents the first use of the interferometric technique for determining the magnitude and sign of the piezoelectric coefficients of III-V compound semiconductors, in particular gallium arsenide (GaAs), gallium nitride (GaN), and aluminium nitride (AIN). The interferometer arrangement used in the present work was a Michelson interferometer, with the capability of achieving a resolution of 10⁻¹³ m. -- The samples used were of two types. The first were commercial wafers, with single crystal orientation. Both GaAs and GaN were obtained in this form. The second type of sample was polycrystalline thin films, grown in the semiconductor research laboratories at Macquarie University. GaN and AIN samples of this type were obtained. -- The d₁₄ coefficient of GaAs was measured by first measuring the d₃₃ value of a [111] oriented sample. This was then transformed to give the d₁₄ coefficient of the usual [001] oriented crystal. The value obtained for d₁₄ was (-2.7 ± 0.1) pmV⁻¹. This compares well with the most recent reported measurements of -2.69 pmV⁻¹. The significance of the measurement is that this represents the first time this coefficient has been measured using the inverse piezoelectric effect. -- For AIN and GaN samples, the present work also represents the first time their piezoelectric coefficients have been measured by interferometry. For GaN, this work presents the first reported measurements of the piezoelectric coefficients, and some of these results have recently been published by the (Muensit and Guy, 1998). The d₃₃ and d₃₁ coefficients for GaN were found to be (3.4 ± 0.1) pmV⁻¹ and (-1.7 ± 0.1) pmV⁻¹ respectively. Since these values were measured on a single crystal wafer and have been corrected for substrate clamping, the values should be a good measure of the true piezoelectric coefficients for bulk GaN. -- For AIN, the d₃₃ and d₃₁ coefficients were found to be (5.1 ± 0.2) pmV⁻¹, and (-2.6 ± 0.1) pmV⁻¹ respectively. Since these figures are measured on a polycrystalline sample it is quite probable that the values for bulk AIN would be somewhat higher. / The piezoelectric measurements indicate that the positive c axis in the nitride films points away from the substrate. The piezoelectric measurements provide a simple means for identifying the positive c axis direction. -- The interferometric technique has also been used to measure the shear piezoelectric coefficient d₁₅ for AIN and GaN. This work represents the first application of this technique to measure this particular coefficient. The d₁₅ coefficients for AIN and GaN were found to be (-3.6 ± 0.1) pmV⁻¹ and (-3.1 ± 0.1) pmV⁻¹ respectively. The value for AIN agrees reasonably well with the only reported value available in the literature of -4.08 pmV⁻¹. The value of this coefficient for GaN has not been measured. -- Some initial investigations into the phenomenon of electrostriction in the compound semiconductors were also performed. It appears that these materials have both a piezoelectric response and a significant electrostrictive response. For the polycrystalline GaN and AIN, the values of the M₃₃ coefficients are of the order of 10⁻¹⁸ m²V⁻². The commercial single crystal GaN and GaAs wafers display an asymmetric response which cannot be explained. / Mode of access: World Wide Web. / Various pagings ill
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Concept, implementation and analysis of the piezoelectric resonant sensor / Actuator for measuring the aging process of human skin / Conception, réalisation et caractérisation d’un actionneur / capteur piézoélectrique résonant destiné à la mesure du vieillissement de la peau humaineSienkiewicz, Lukasz Krzysztof 07 June 2016 (has links)
L’objectif de cet projet est la conception, réalisation et caractérisation d’un actionneur / capteur piézoélectrique piézorésonant destiné à la mesure du vieillissement de la peau humaine. L’étude présentée est le fruit d’une collaboration entre le groupe de recherche de l'Electrodynamique du INP-ENSEEIHT (Toulouse), LAPLACE Laboratoire de Recherche et l'École Polytechnique de Gdask, Département Génie Electrique et Automatique. Un concept d’actionneur / capteur pour la caractérisation des propriétés mécaniques des tissus mous a été présenté. Un actionneur piézoélectrique résonant, appelé "unimorphe" a été choisi parmi les différentes structures piézoélectriques fondées sur le cahier des charges. L'innovation du projet réside dans l'intégration de la méthode d'indentation dynamique en utilisant un unimorphe comme dispositif d'indentation. Ceci permet l'utilisation d'un certain nombre de propriétés électromécaniques favorables des transducteurs piézo-électriques. Ce mémoire est divisé en 7 chapitres. Le chapitre 1 présente la thèse et ses objectifs. Le chapitre 2 présente le phénomène piézoélectrique et les applications piézoélectriques dans les domaines de la médecine et de la bio ingénierie. Le chapitre 3 décrit le cahier des charges pour le transducteur développé. Le choix du transducteur unimorphe est ainsi justifié. Le chapitre 4 présente une description analytique du transducteur unimorphe, y compris les calculs de déformations statiques, la description du circuit équivalent de Mason, et la description des conditions de contact entre la sonde d'indentation et les matériaux testés. Le chapitre 5 contient l'analyse numérique du transducteur unimorphe en utilisant le modèle virtuel MEF. Les résultats de simulations statiques et modales sont décrits par deux géométries considérées du transducteur. Le chapitre 6 décrit le processus de vérification expérimentale des modèles analytiques et numériques développés pour le transducteur unimorphe. Enfin, le dernier chapitre comprend des conclusions générales concernant les résultats de recherche obtenus, ainsi que les travaux futurs possibles. Afin de vérifier la thèse d'un cycle complet de recherche a été effectuée, qui a couvert: étude analytique, l'analyse numérique (simulations MEF), réalisation de prototype, et la vérification expérimentale des actionneurs / capteurs piézoélectriques considérés. / The main goal of the dissertation was following: preparation of a new concept, implementation and analysis of the piezoelectric resonant sensor/actuator for measuring the aging process of human skin. The research work has been carried out in the framework of cooperation between the INP-ENSEEIHT-LAPLACE, Toulouse, France, and at the Gdansk University of Technology, Faculty of Electrical and Control Engineering, Research Group of Power Electronics and Electrical Machines, Gdask, Poland. A concept of transducer for the characterization of mechanical properties of soft tissues was presented. The piezoelectric resonant, bending transducer, referred to as “unimorph transducer” was chosen from different topologies of piezoelectric benders based on the fulfillment of the stated requirements. The innovation of the project lies in the integration of the dynamic indentation method by using a unimorph as an indentation device. This allows the use of a number of attractive electromechanical properties of piezoelectric transducers. The thesis is divided into seven chapters. Chapter 1 states the thesis and goals of the dissertation. Chapter 2 presents piezoelectric phenomenon and piezoelectric applications in the fields of medicine and bioengineering. Chapter 3 describes the requirements for the developed transducer. The choice of unimorph transducer is justified. Chapter 4 presents an analytical description of the unimorph transducer, including the calculations of static deformations, equivalent circuit description, and description of the contact conditions between the transducer and the tested materials. Chapter 5 contains the numerical analysis of the unimorph transducer using FEM virtual model. Results of static and modal simulations are described for two considered geometries of the transducer. Chapter 6 describes the experimental verification process of analytic and numerical models developed for unimorph transducer. The final chapter includes general conclusions concerning obtained research results and achievements, as well as possible future works. In order to verify the proposition of the thesis a full research cycle was carried out, that covered: analytical study, numerical analysis (FEM simulations), prototype realization, and experimental verification of the considered (developed) piezoelectric sensor/actuator structures.
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Structural, Optical and Electrical Studies on Multi-Functional Organic Single CrystalsSaripalli, Ravi Kiran January 2017 (has links) (PDF)
In this thesis, the physical properties of certain multi-functional organic crystals were studied in detail. This study involves the growth of single crystals of Glucuronic acidγ-lactone (GAL), Imidazoliumtartarate (IMLT), (Bis)imidazoliumtartarate (BIMLT), and Diisopropylammonium iodide (DPI) and investigations of their optical, dielectric, piezoelectric, pyroelectric, and ferroelectric properties as a function of temperature and dependence on crystal structure in these organic crystals.
Piezoelectric resonance was observed at certain frequencies when dielectric constant was monitored along the b-plate of GAL crystals. The electro-mechanical coupling coefficient estimated at the resonance near 1 MHz frequency revealed an exceptionally large value in GAL similar to that in inorganic lead titanate. The dependence of the piezoelectric resonance frequency on temperature was studied in detail. These crystals showed excellent second- and third-order nonlinear optical properties as well as high laser damage threshold. The high values of χ(2) andχ(3), laser damage threshold, and low UV cut-off makes GAL crystals an interesting prospect for NLO and laser applications. Towards this goal, GAL crystals were studied in detail with regard to determination of directions of dielectric axes, optic axes, and collinear phase-matching.
Single crystals of another promising NLO organic crystal, IMLT were also grown which showed interesting dielectric, piezoelectric, and NLO properties. The dielectric dispersion with temperature provided an insight to the polarization mechanisms. Like GAL, IMLT also exhibits piezoelectric resonance. The existence of only one easy axis of vibration in IMLT enabled the candidate to identify the first resonance peak as corresponding to the fundamental mode of oscillation in the sample. This also helped to determine many piezoelectric parameters. By angular phase matching, one direction of phase matching in IMLT was identified. The conversion efficiency of IMLT along this direction was determined which was high in comparison to that in a standard KDP crystal. At piezoelectric resonance frequencies, the electro-optic response due to photo-elastic contributions is enhanced. Single crystals of organic ferroelectric BIMLT were grown by mixing two moles of imidazole with one mole of l-tartaric acid. The controversy with regard to the phase transition temperature of BIMLT was clarified by the DSC and structural analysis in this work. Previously, studies on BIMLT were limited to polycrystalline samples and single crystals with inclusions primarily due to the difficulty in growing good quality single crystals from aqueous solution. However, by experimenting the growth process using different solvents, good quality single crystals were achieved without the trapping of mother solution. This remarkable find is a notable result in these crystals for ferroelectric applications. The mechanism of ferroelectricity in BIMLT is mainly attributed to the transfer of protons along N–H---O hydrogen bonds in the direction of b-axis.
Interestingly, the values of spontaneous polarization and Curie-temperature in the organic ferroelectric material DPI were significantly high and comparable to several popular inorganic ferroelectrics. The polarization obtained in this material is the highest among reported organic ferroelectrics. In addition to the high Curie temperature and spontaneous polarization, there were unique phase transitions that were revealed in DPI. The mechanism of ferroelectricity is quite complex, mainly being displacive type on account of the change in orientation of dipoles with electric field. Some contribution to ferroelectricity comes from the order-disorder nature of Nitrogen atom.
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Micro-actionneurs piézoélectriques / Piezoelectric micro-actuatorsCueff, Matthieu 17 November 2011 (has links)
Le Titano-Zirconate de Plomb, ou PZT est un matériau piézoélectrique présentant de très bonnes performances pour l'actionnement des microsystèmes. Dans ce travail de thèse, nous nous proposons de répondre à la problématique de l'intégration du PZT par dépôt sol-gel. Dans une première partie, nous présenterons l'état de l'art des MEMS piézoélectriques et du PZT. Dans une seconde partie, nous montrerons comment obtenir des couches minces de PZT orientées (100) et (1111) de façon homogène, pour une des épaisseurs de 100 nm à 2µm. Dans une troisième partie, nous comparerons les propriétés ferroélectriques et piézoélectriques des films, en fonction de l'orientation. Pour l'orientation (100), nous avons pu mesurer un coefficient d31 supérieur à -150 pm/V et un coefficient e31,f de -16 C/m2. Pour l'orientation (111), nous avons mesuré un d31 de -100 pm/V et un e31,f de -14 C/m2. Pour expliquer les différences observées, nous avons également abordé le problème du blocage des parois de domaines. Dans une quatrième partie, nous présentons la fabrication et la caractérisation d'un interrupteur MEMS radiofréquences packagé et stabilisé en température fonctionnant à basse tension. A l'état bloqué, il présente une isolation de -44 dB à 2 GHz. A l'état passant, il présente des pertes d'insertion de -0.74 dB à 2 GHz. Dans cette partie, nous présentons également l'intégration d'une jauge de contraintes dans un actionneur piézoélectrique. Dans la dernière partie, nous présentons l'intégration de nos procédés dans des membranes sans dégradation des performances. Une étude préliminaire de fiabilité est également menée. Le mécanisme conduisant à la dégradation de nos composants est lié au vieillissement du matériau, ce qui montre que notre procédé de dépôt est maitrisé de façon homogène sur des substrats 200 mm. / PZT is a piezoelectric material which exhibits very good performances for microsystems actuation. In this work, the problem of sol-gel deposited PZT integration is discussed. First, state of the art of piezoelectric MEMS and PZT is presented. Then, the fabrication of homogeneous (100) and (111) oriented PZT thin films is presented. Layers thicknesses are comprised between 100 nm and 2 µm. Thirdly, ferroelectric and piezoelectric properties of the two oriented thin films are compared. For (100) oriented films, the d31 piezoelectric coefficient was greater than -150 pm/V and the e31,f reaches -16 C/m2. For (111) oriented films, the d31 and e31,f reach -100 pm/V and -14 C/m2 respectively. To explain observed differences, domain walls pinning was studied. Next, fabrication and characterization of a low voltage, fully packaged and thermally stabilized RF MEMS piezoelectric switch is presented. At the off-state, the switch isolation is -44 dB at 2 GHz. At the on-state, insertion losses are -0.74 dB at 2 GHz. The integration of a metallic gauge in a piezoelectric cantilever is also presented. Finally, developed processes are integrated in membranes fabrication without any degradation. A preliminary reliability study is presented. The fail mechanism of our components is an aging mechanism. This shows that our sol-gel deposition process is well-controlled on 8 inches wafers.
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Développement de nanocomposites à propriétés piézoélectriques et optiques non-linéaires / Development of piezoelectric and nonlinear optical nanocomposite materialsHouf, Latifa 28 October 2011 (has links)
Le développement de nouveaux capteurs, transducteurs et de dispositifs intégrés optoélectroniques et piézo-électriques nécessite l'élaboration de nouveaux matériaux avec des propriétés mécaniques, optiques et électriques couplées. Dans cette perspective, les nanocomposites à base de nanocristaux inorganiques non centrosymétriques dispersés dans une matrice polymère peuvent donner à la fois des propriétés piézoélectriques et optiques non-linéaires. Cependant, la dispersion et l’orientation des nanocristaux dans la matrice sont primordiales si on souhaite un comportement collectif des nanocristaux individuels et des propriétés résultantes significatives. Dans ce travail, nous avons utilisé des cristaux d’iodate de fer (Fe(IO3)3) comme nano-charges inorganiques et le PMMA/ PTMPTA comme matrice polymère. La réponse optique non-linéaire du Fe(IO3)3 est comparable à celle des cristaux les plus efficaces tels que BaB2O4 et LiNbO3. Le comportement piézoélectrique du matériau massif n’étant pas référencé, sa structure cristalline laisse toutefois envisager des propriétés piézoélectriques intéressantes. Par ailleurs, la matrice polymère a été choisie pour sa simplicité d'utilisation et de production, son coût relativement faible, sa versatilité et sa facilité de mise en forme. Les nanocomposites peuvent être élaborés par deux voix différentes : la première consiste à disperser mécaniquement des nanocristaux fonctionnalisés dans un polymère ou dans un solvant de polymère approprié et la deuxième concerne la polymérisation in-situ de microémulsions composées du monomère liquide. Les synthèses en microémulsions inverses ont été privilégiées pour d’une part élaborer des nanocristaux d’iodate de fer de taille et de forme contrôlées puis, d’autre part, photo-polymériser des couches minces déposées à la tournette. Un aspect très original de ce travail consiste en l’utilisation de la Diffusion Hyper-Rayleigh pour étudier in-situ les cinétiques de cristallisation des particules d’iodate de fer en fonction des conditions expérimentales de synthèse à savoir, la température et la composition des microémulsions. Cette technique qui consiste à détecter les réponses optiques non-linéaires des suspensions de nanoparticules en microémulsions a été combinée avec d’autres méthodes expérimentales plus classiques comme la diffraction des rayons X, la diffusion dynamique de la lumière et la microscopie électronique en transmission. Cela a permis d’élucider les mécanismes de croissance des nanocristaux d’iodate de fer en microémulsions inverses. Par la suite, des couches minces nanocomposites ont été préparées après orientation sous champs électriques des nanocristaux polaires dispersés dans le MMA. Les caractérisations mécaniques, optiques non linaires et piézoélectriques de ces couches sont encourageantes. / The development of new sensors, transducers and integrated optoelectronic and piezoelectric devices requires the preparation of new materials that link mechanical, optical and electrical properties. In this perspective, it is expected that nanocomposite materials with inclusions of acentric inorganic nanocrystals in a polymer matrix will give rise to both piezoelectric and nonlinear optical (NLO) properties. Dispersion and orientation of nanocrystals in the polymer matrix are however crucial to obtain a collective response of individual nanocrystals and significant resultant properties. In this work, iron iodate (Fe(IO3)3) nanocrystals were used as nanofillers of a PMMA / PTMPTA polymer matrix. The nonlinear optical response of Fe(IO3)3 is comparable to the most effective NLO crystals such as LiNbO3 and BaB2O4. Good piezoelectric properties are also expected due to the material crystalline structure. Moreover, the polymer matrix was chosen for its ease of use and production, its relatively low cost, versatility and ease in shaping. Elaboration of nanocomposites is usually based on two different experimental procedures: mechanical dispersion of functionalized nanocrystals in a suitable polymer or polymer solvent is a first route whereas in-situ polymerization of reverse microemulsions for which a liquid monomer is the oil phase is the second one. Water-in-Oil (W/O) microemulsions were preferred in order to control the size and shape of as-obtained iron iodate nanocrystals and then to polymerize spin-coated thin films. A very original aspect of this work is the implementation of the Hyper-Rayleigh Scattering technique to probe in-situ the crystallization kinetics of iron iodate nanoparticles according to the experimental conditions (synthesis temperature and microemulsions composition). Detection of the second-harmonic scattered light combined with more conventional experimental techniques such as X-ray diffraction, dynamic light scattering and Transmission Electron Microscopy allowed us to understand the growth mechanisms of iron iodate naocrystals in W/O microemulsions. Nanocomposite thin films were then spin-coated after electric fields orientation of dispersed polar nanocrystals in MMA.
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Motor ultra-sônico linear com geometria tubular / Linear ultrasonic motor with tubular geometryPippi, Rafael Silva 07 May 2008 (has links)
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / This work presents the study on a linear ultrasonic motor with tubular geometry for linear displacements. Similar topologies, reported elsewhere, are conceived for producing rotary motions. Due to some particular characteristics of this geometry, not explored yet, a new study on interaction between resonance modes in a hollow cylinder for linear movement generation is proposed.
In order to experimentally investigate the resonance modes in tubular stators, a proof of concept prototype was built and tested. The prototype consisted of a internally toothed phosphore bronze tube, excited by two PZT rings. Several types of mobile axes, with one or more solid cylinders of aluminum or stainless steel, were employed. The methodology of test consisted of changing
geometric parameters, properties of materials, sweeping driving conditions, and observing the respective movement on the shaft. Tests showed the production of linear and/or angular movements, with maximum speeds of 0,07m/s, but with little uniformity and repeatability. The lack of conclusive hypothesis on the stability issue, based only on experimental set of results, has led to a reassessment of the methodology of investigation, including additional analysis tools for the characterization of the device. So, a simple analytical modeling of the stator was formulated to set up a project methodology. Despite its simplicity and limitations, the analytical model allows a first order approximation for resonance modes, and relates them to the constructive parameters of the stator. In order to take the influence of the factors neglected in the analytical
modeling into account, the analysis was complemented with finite element method (FEM) simulations. The deformation profiles of the stator to the 21st resonance mode were analyzed using FEM. With the results, it is possible to predict the behavior of the resonance frequencies, and the corresponding deformations they produce on the teeth, for each stator configuration. The most important result of this analysis is to show the relationship between aspect ratio of ellipsoidal trajectory on the stator teeth
and the geometry of the stator. This allows a conclusive diagnosis on the inefficiency of the built prototype: The small amplitude of the longitudinal component of traveling deformation wave. An analysis of simulations results has lead to a design methodology for this new type of motor.
The results showed that if the stator is redesigned according to the proposed methodology, it would be
able to produce longitudinal deformations of 2.6 μm, with ceramics driven at 35.3 V. If Compared to simulations of the prototyped stator the new project exhibits an increase of 90% for radial deformation components of, and 3600% for the longitudinal components, indicating that if the new design was implemented, it could achieve much higher efficiency in movement production. / Este trabalho apresenta o estudo de um motor ultra-sônico com geometria tubular para movimentos lineares. Outros motores com geometria tubular, encontrados na bibliografia, são concebidos para a produção de movimentos rotativos. Devido a diversas características ainda não exploradas desta geometria, um novo estudo sobre a interação dos modos naturais de vibração de um cilindro vazado para a geração de movimento linear é proposto. Com o objetivo de investigar experimentalmente os modos de ressonância em estatores
tubulares, um protótipo para prova de conceito foi construído e ensaiado. O protótipo consiste de um tubo vazado, dentado internamente, excitado por dois anéis de PZT. Foram utilizados diversos tipos de eixos móveis, com um ou mais cilindros maciços de alumínio ou aço inoxidável. A metodologia de ensaio consistiu da variação dos parâmetros geométricos, propriedades de materiais e condições de acionamento, e da respectiva observação e medição dos movimentos do eixo. Os testes evidenciam a produção de movimentos lineares e/ou angulares com velocidades máximas de aproximadamente
0,07m/s, mas com pouca uniformidade e repetibilidade.
A impossibilidade de uma análise conclusiva sobre a instabilidade do motor com base apenas nos resultados experimentais de bancada motivou uma reavaliação da metodologia de estudo e a busca de ferramentas adicionais para a caracterização do dispositivo. Uma modelagem analítica do estator foi formulada para que um roteiro de análise e cálculos dimensionais pudessem ser estabelecidos. Embora simples e com diversas limitações, o modelo obtido permite aproximações de primeira ordem para os modos de ressonância em função dos parâmetros construtivos do estator. Para que a influência das não-linearidades não incluídas na modelagem possa ser avaliada, a análise
foi complementada com simulações pelo método dos elementos finitos (FEM). Os perfis das deformações do estator até o 21o modo de ressonância foram analisados utilizando FEM. Com os resultados obtidos, é possível prever o comportamento das freqüências naturais e das deformações
nos dentes em função das características do estator. O resultado mais importante desta análise é mostrar a relação de aspecto da trajetória elipsoidal dos dentes do estator, com a geometria do estator, permitindo um diagnóstico conclusivo sobre a ineficiência do protótipo construído: A baixa
amplitude da componente de deformação longitudinal da onda viajante no tubo. O estudo dos resultados das simulações permitiu o estabelecimento de um roteiro de análise
e cálculos dimensionais para este novo tipo de motor. Simulações realizadas mostraram que um estator projetado com o roteiro proposto, é capaz de produzir deformações longitudinais de 2,6μm e radiais de 3,8μm, quando as cerâmicas piezelétricas são acionadas a 35,3 V. Comparando-se os resultados das simulações do estator prototipado com o novo projeto, observa-se um acréscimo teórico de 90% nas componentes de deformação radial e 3600% nas componentes longitudinais, indicando que um novo protótipo construído de acordo com o projeto pode atingir uma eficiência
muito superior na produção de movimento.
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Direct molecular dynamics simulation of piezoelectric and piezothermal couplings in crystals / Simulation directe par dynamique moléculaire des couplages piézoélectrique et piézothermique dans les cristauxKassem, Wassim 14 September 2015 (has links)
La thèse est axée sur l'examen de l'effet de la contrainte sur la conductivité thermique des matériaux piézoélectriques. Les matériaux piézoélectriques sont des cristaux qui présentent une déformation mécanique lors de l'application d'un champ électrique. Des exemples de tels systèmes sont ZnO, AlN, et SiO2. En utilisant des simulations de dynamique moléculaire, nous avons calculé la conductivité thermique de cristaux de ZnO et AlN sous contrainte. Nous avons aussi calculé la résistance thermique des interfaces SiO/C et ZnO/C soumis à un champ électrique.Nous commençons par le calcul des propriétés piézoélectriques et élastiques de ZnO. Celles-ci serviront à valider les potentiels interatomiques utilisés, et à montrer l'ampleur de la contrainte qu’il est possible d'appliquer. En utilisant la dynamique moléculaire d'équilibre, nous avons estimé le coefficient élastique c33 de ZnO, qui se trouve être en accord avec les valeurs expérimentales. Il a aussi été déterminé que la limite élastique d'un cristal de ZnO est de 6 GPa, ce qui correspond à une déformation de 6%. Nous avons ensuite établi les coefficients piézoélectriques de ZnO en utilisant la dynamique moléculaire de non-équilibre, et il a été constaté que les coefficients piézoélectriques dij sont en accord avec les valeurs de la littérature.Deuxièmement, nous avons examiné l'effet de la pression sur la conductivité thermique intrinsèque de ZnO et d’AlN. La dynamique moléculaire de non-équilibre inverse a été mise en œuvre pour calculer la conductivité parce que les coûts de calcul sont nettement inférieurs à ceux de la méthode d'équilibre, d’autant plus pour ZnO dont le potentiel inter-atomique contient les interactions Coulombiennes. L'effet de taille sur la conductivité thermique de ZnO et AlN a ensuite été étudié. Nous avons montré que la formule de Schelling peut en effet être mise en œuvre pour les deux cristaux pour différentes valeurs de la contrainte. La conductivité thermique pour un cristal de ZnO de taille infinie est extraite de la formule de Schelling, et elle se révèle être de 410 W/mK. La conductivité thermique de cristaux de ZnO sous contrainte a ensuite été analysée. Nous avons montré que, après correction de l'effet de taille, la conductivité thermique suit une dépendance en loi de puissance à la contrainte uniaxiale. De plus, la conductivité thermique de ZnO est affectée par un champ statique externe en raison de la contrainte induite. La conductivité thermique d'AlN est estimée à 3000 W/mK, l'effet de la contrainte ne modifie pas cette valeur du fait du potentiel inter-atomique utlisé. Par conséquent, AlN n’est pas un matériau pertinent pour faire office de switch thermique.Troisièmement, nous avons exploré l'effet d’un déplacement piézoélectrique sur la conductance thermique d’interface de Si2O/graphène et ZnO/graphène. Utilisant la dynamique moléculaire d’équilibre, la conductivité thermique d'un super-réseau dont la période est composée de silice et de graphène polyfeuillet. Le super-réseau a été évalué pour différentes valeurs du champ électrique externe. Nous avons constaté que l'application d'un champ électrique de 20 MV/m positif parallèle à la direction hors-plan du super-réseau conduit à la réduction de la conductivité thermique d'un facteur deux. D'autre part, aucun changement dans la conductance thermique n’est noté pour le super-réseau ZnO/graphène. Cette différence est due aux différences de déformations induites au niveau des interfaces dans le super-réseau. L'effet est recréé dans un super-réseau Si/Ge en appliquant une déformation pour former les interfaces. Cette approche crée une déformation non uniforme qui est susceptible de diffuser les phonons. / The thesis is focused on investigating the effect of strain on the thermal conductivity of piezoelectric materials. Piezoelectric materials are crystals which display a mechanical deformation upon application of an electric field. Examples of such material are ZnO, AlN, and SiO2. Using Molecular Dynamics simulations, we calculate the thermal conductivity of unstrained and strained ZnO and AlN crystals. We also calculate the thermal resistance of SiO/graphene interfaces under strain.We calculate the piezoelectric and elastic properties of ZnO. These will serve as confirmation of the correctness of the inter-atomic potential used, and will serve to show the magnitude of strain that is possible to apply. Using non-equilibrium molecular dynamics, we determine the elastic coefficient of ZnO c33, and we see that it agrees with experimental values. We also determine that the elastic limit of a perfect ZnO crystal is 6 GPa which corresponds to a 6% strain. We also determine the piezoelectric coefficient of ZnO using NEMD, and we find that the piezoelectric coefficient d33 also agrees with literature values.Second, we look at the effect of strain on the intrinsic thermal conductivity of ZnO and AlN. We use reverse non-equilibrium molecular dynamics to calculate the conductivity because the computational costs are significantly lower than those for the equilibrium method; especially for ZnO whose inter-atomic potential contains Coulomb interaction. We also study the size-effect on the thermal conductivity of ZnO and AlN. We show that the Schelling formula can indeed be implemented to both crystals for different values of strain. The infinite length thermal conductivity for ZnO is extracted from the formula, and it is found to be 410 W/mK. We then calculate the thermal conductivity of strained ZnO crystals. We show that after correcting for the size effect the thermal conductivity follows power-law dependence to uniaxial strain. Also, we demonstrate that the thermal conductivity of ZnO can be affected by a static external field due to the induced strain. The infinite length thermal conductivity of AlN is found to be 3000 W/mK. We show that for the case of AlN the effect of strain does not affect the thermal conductivity due to the different inter-atomic bonding. Hence, AlN might not be a useful material for piezothermal application.Third, we explore the effect of piezoelectric strain on the thermal conductance of SiO2/graphene and ZnO/graphene superlattices. Using EMD we calculate the thermal conductivity of a superlattice composed of silica and graphene monolayers. The thermal conductance of the superlattice was evaluated under different values of external electric field. We find that applying a positive electric field parallel to the Z-direction leads to reduction of the thermal conductance by a factor of 2 for an electric field of 20 MV/m. On the other hand, no change in the thermal conductance is noted for ZnO/graphene superlattice. The effect is due to the non-uniform strain induced at the superlattice junctions. The effect is recreated in Si/Ge superlattice by mechanically applying a non-uniform strain at the interface. This approach might be responsible for the scattering of phonons.
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