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Class C power amplifiers offer higher efficiency than class B power amplifiers, but suffer from poor linearity. A feedback based biasing system to improve the linearity of a class C power amplifier is designed. A class B amplifier with a gain of 20 dB and 20 MHz bandwidth at 900 MHz acts as the launching point for the design. The biasing and output network of the class B power amplifier is modified to produce a class C amplifier at conduction angles of 180°, 162°, 126°, 90°, and 54°. A feedback based biasing system, which uses two matched and scaled down transistors, compares the DC current of a class B and a class C biased transistor. This comparison is used to control the biasing voltage of the amplifier. The performance for each class C amplifier is simulated with the proposed constant conduction angle biasing (CCAB) system. The conduction angle, transducer gain, operational gain, VSWR, and drain efficiency are measured from simulation for each of the 5 normally biased and 5 CCAB amplifiers. Dynamic ranges of over 8 dB are demonstrated for the CCAB amplifiers. The effects of loop gain, temperature, and operating frequency for the 126° amplifier are simulated. The 3rd order intermodulation products of a 10 MHz AM modulated 900 MHz signal are compared for the 126° normally biased and CCAB biased amplifier as well as the class B amplifier. The difference between the fundamental and the 3rd order intermodulation products is shown to improve from 9.9 dB for the normal class C to 28.7 dB for the CCAB amplifier.

Yes / A characteristic loop locus of dc power versus RF output power was observed as the frequency was varied around the optimum point of an operational active antenna. A new technique was introduced into the simulation, plotting the dependence of parameters such as supply current, efficiency or output power on internal impedance as seen by the naked transistor. It is now clear that the loop was formed as a consequence of the interaction of the transistor packaging elements with the patch impedances.

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Yes / This work develops a novel dynamic load modulation Power Amplifier (PA) circuity that can provide an optimum compromise between linearity and efficiency while covering multiple cellular frequency bands. Exploiting monolithic microwave integrated circuits (MMIC) technology, a fully integrated 1W Doherty PA architecture is proposed based on 0.1 µm AlGaAs/InGaAs Depletion- Mode (D-Mode) technology provided by the WIN Semiconductors foundry. The proposed wideband DPA incorporates the harmonic tuning Class-J mode of operation, which aims to engineer the voltage waveform via second harmonic capacitive load termination. Moreover, the applied post-matching technique not only reduces the impedance transformation ratio of the conventional DPA, but also restores its proper load modulation. The simulation results indicate that the monolithic drive load modulation PA at 4 V operation voltage delivers 44% PAE at the maximum output power of 30 dBm at the 1 dB compression point, and 34% power-added efficiency (PAE) at 6 dB power back-off (PBO). A power gain flatness of around 14 ± 0.5 dB was achieved over the frequency band of 23 GHz to 27 GHz. The compact MMIC load modulation technique developed for the 5G mobile handset occupies the die area of 3.2. / This research was funded by the European Regional Development Fund (FEDER), through COMPETE 2020, POR ALGARVE 2020, Fundação para a Ciência e a Tecnologia (FCT) under i-Five Project (POCI-01-0145-FEDER-030500). This work is also part of the POSITION-II project funded by the ECSEL joint Undertaking under grant number Ecsel-345 7831132-Postitio-II-2017-IA. This work is supported by FCT/MCTES through national funds and when applicable co-funded EU funds under the project UIDB/50008/2020-UIDP/50008/2020. The authors would like to thank the WIN Semiconductors foundry for providing the MMIC GaAs pHEMT PDKs and technical support. This work is supported by the Project TEC2017-88242-C3-2-R- Spanish Ministerio de Ciencia, Innovación e Universidades and EU-FEDER funding.

yes / This paper describes the characterization and design of energy efficient user terminal transceiver power amplifier. To reduce the design of bulky external circuitry, the load modulation technique is employed. The design core is based on the combination of Class B and Class C that includes quarter wavelength transformer at the output to perform the load modulation. The handset transceiver for this power amplifier is designed to operate over the frequency range of 3.4GHz to 3.6GHz mobile WiMAX band. The performances of the load modulation amplifier are compared with conventional Class B amplifier. The results of 30dBm output power and 53% power added efficiency are achieved.

Yes / The biggest challenge for future 4G systems is the need to limit the energy consumptions of battery-powered and base station devices, with the aim to prolong their operational time and avoid active cooling in the base station. The green wireless communications requires research in areas such as energy efficient RF front end, MAC protocol, networking, deployment, operation, and also the integration of base station with renewable power supply. In this paper, the design concept of energy efficient RF front end is considered in terms of RF power amplifiers at which it represents the workhorse of modern wireless communication systems and inherently nonlinear. The approach of output power back off is to amplify the signal at the linear region to avoid distortion, but this approach suffers from significant reduction in efficiency and power output. To boost the efficiency at wide range of output power and keep the same margin for signal with high crest factor, the load modulation technique with new offset line are employed to operate over the frequency range of 3.4GHz to 3.6GHz band. The performances of load modulation power amplifier are compared with balanced amplifier. The results of 42dBm output power and 62% power added efficiency are achieved.