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Estudo das propriedades estruturais e ópticas em materiais nanoestruturados a base de silício. / Study of structural and optical properties in nanostructured silicon based films.Márcia Ribeiro 11 May 2009 (has links)
Esta tese de doutorado tem por objetivo aprofundar as pesquisas realizadas no mestrado, a saber, da caracterização e estudo das propriedades estruturais e ópticas de filmes de oxinitreto de silício (SiOxNy:H) ricos em silício depositados pela técnica de deposição química a vapor assistida por plasma a baixa temperatura (PECVD). Os resultados obtidos no mestrado indicaram que os filmes de SiOxNy:H ricos em silício apresentam emissão luminescente na faixa do visível cuja intensidade e freqüência de emissão estão em correlação com o excesso de silício. Os resultados sugeriram que o excesso de silício na matriz do SiOxNy:H estava disposto na forma de aglomerados de silício de dimensões nanométricas responsáveis por efeitos de tamanho quântico bem como a estados radiativos na interface dos aglomerados com a matriz isolante. Neste trabalho a fim de avaliar o efeito da separação de fases, do tamanho quântico, e da interface, foram produzidos sistemas nanoestruturados a base de silício com total e parcial separação de fases para caracterizar e analisar suas propriedades ópticas e estruturais e compará-las com as dos filmes ricos em silício. Assim foram produzidas multicamadas de a-Si:H de poucos nanômetros de espessura com materiais dielétricos. Em algumas destas multicamadas foi promovida a mistura parcial das camadas por meio de bombardeamento iônico. O estudo nas estruturas de multicamadas permitiu caracterizar e analisar as propriedades estruturais e ópticas de materiais nanoestruturados com total e parcial separação de fases para posteriormente contrastá-los com as características dos filmes de oxinitreto de silício ricos em silício. A fim de analisar a influência da interface nas propriedades ópticas destes sistemas as multicamadas foram fabricadas com dois dielétricos diferentes: o óxido de silício e o ni treto de silício. A espessura das camadas dielétricas foi mantida fixa entanto que a das camadas de silício foi variada para avaliar efeitos de confinamento no silício. A caracterização foi feita utilizando técnicas de absorção óptica no UV-Vis, absorção no infravermelho (FTIR), espectroscopia Raman, fotoluminescência (PL), espectroscopia de absorção de raios X próximos 7 à borda do silício (XANES), e microscopia eletrônica de transmissão de alta resolução (HRTEM). Da análise dos resultados concluiu-se que o confinamento é fundamental para a existência da emissão luminescente embora o tipo de interface influencie a energia e a intensidade da emissão. A análise comparativa com as multicamadas permitiu verificar que os filmes de oxinitreto de silício ricos em silício apresentam, separação parcial de fases já como depositados, os tratamentos térmicos promovem a segregação do silício aumentando conseqüentemente a separação de fases. / The aim of this doctorate thesis is to enhance the knowledge in the research conducted along the Master degree based on the characterization and study of the structural and luminescent properties of silicon rich silicon oxynitride films (SiOxNy:H) deposited at low temperature by Plasma Enhanced Chemical Vapor Deposition (PECVD). The results of this study indicated that silicon rich SiOxNy:H films present luminescence in the visible spectra range with intensity and frequency in correlation with the silicon excess. The results suggested that the silicon excess in the SiOxNy:H matrix is confined in nanometric silicon clusters responsible for the to quantum size effects as well as for radiactive states at the interface of the silicon clusters with the insulating matrix. In the present work in order to evaluate the effect of phase separation, quantum size and interface effects si licon based nanostructured systems presenting total and partial phase separation were produced and their structural and optical properties were characterized in order to correlate them with the silicon rich films ones. In this way multilayers with few nanometers thick a-Si layers with dielectric materials were produced. The mixture of the layers was promoted by ion bombardment in some of these multilayers. The study of these structures permitted the characterization of structural and optical properties of materials with total and partial phase separation with the purpose of comparing them to the silicon-rich silicon oxynitride films characteristics. In order to analyze the interface influence in the optical properties, multilayers systems with two different dielectric materials, silicon oxide and silicon nitride, were fabricated. The dielectric layer thickness was kept constant while the silicon layer was varied in order to study the confinement effect. The characterization was done utilizing UV-Vis optical absorption, infrared absorption (FTIR), Raman spectroscopy, Photoluminescence (PL), X-ray absorption near edge spectroscopy (XANES) and high-resolution transmission electron microscopy (HRTEM) techniques. From the results analysis it was concluded that confinement is essent ial for the existence of luminescent 9 emission although the type of interface also influences the energy and intensity of the emission. The comparative analysis with the multilayers permitted to verify that the silicon-rich silicon oxynitride films present, as deposited, partial phase separation and that the thermal treatments promotes silicon aggregation thus increasing the phase separation.
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Green Chemical Synthesis of II-VI Semiconductor Quantum DotsShahid, Robina January 2012 (has links)
Nanotechnology is the science and technology of manipulating materials at atomic and molecular scale with properties different from bulk. Semiconductor QDs are important class of nanomaterials with unique physical and chemical properties owing to the quantum confinement effect. Size dependent optical properties make research on semiconductor QDs more attractive in the field of nanotechnology. Semiconductor QDs are usually composed of combination of elements from groups II–VI, III–V, or IV–VI of the periodic table. Group II-VI semiconductor QDs (ZnS, ZnSe, ZnO, CdSe, CdS) are most extensively studied systems, having bandgap which can be engineered through the variation of the material composition and size. Most common QDs are made of CdE (E=S, Se, Te) which are toxic. Recent environmental regulations restrict the use of toxic metals and therefore QDs containing nontoxic metals such as Zn are of great importance. The chemical synthesis of QDs involves different methods. Usually high temperature thermal decomposition of organometallic compounds in high boiling point organic solvents is used which needs long reaction time and involves complex synthesis procedures. New simpler and efficient synthetic routes with alternative solvents are required. Recently the synthesis of non-toxic QDs using green chemical routes is a promising approach receiving increasing attention. The aim of this Thesis is to develop novel routes for synthesis of semiconductor QDs employing green nanomaterial synthesis techniques. Therefore, in this work, we developed different green chemical routes mainly for the synthesis Zn-based QDs. Low temperature synthesis routes were developed for the synthesis of ZnS and ZnO QDs. Microwave irradiation was also used as efficient heating source which creates numerous nucleation sites in the solution, leading to the formation of homogeneous nanoparticles with small size and narrow size distribution. Different polar solvents with high MW absorption were used for synthesis of ZnS QDs. We also introduced ionic liquids as solvents in the synthesis of ZnS QDs using microwave heating. ILs are excellent reaction media for absorbing microwaves and are recognized as ‘green’ alternative to volatile and toxic organic solvents. For ZnS systems, the QDs produced by different methods were less than 5 nm in size as characterized by high-resolution transmission electron microscopy (HR-TEM). Selected area electron diffraction (SAED) patterns revealed that ZnS QDs synthesized by low temperature synthesis technique using conventional heating are of cubic crystalline phase while the QDs synthesized by using MW heating are of wurtzite phase. The optical properties were investigated by UV-Vis absorption spectrum and show a blue shift in absorption as compared to bulk due to quantum confinement effect. The photoluminescence (PL) spectra of ZnS QDs show different defect states related emission peaks and depend on different synthesis methods, high bandedge related emission is observed for ZnS QDs synthesized by using ionic liquids. ZnO QDs synthesized by low temperature route were found to be less than 4 nm in size and also show a blue shift in their absorption. The PL spectrum show bandedge related emission which is blue shifted compared with bulk with no emission originating from surface defect levels. The results show that QDs are of high crystalline quality with narrow size distribution. A comparative study of using conventional and MW heating in the synthesis of CdSe QDs was performed. The reactions involving microwave heating showed enhanced rates and higher yields. The developed methods involve all principles for green nanomaterials synthesis i.e. design of safer nanomaterials, reduced environmental impact, waste reduction, process safety, materials and energy efficiency. / <p>QC 20121115</p>
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étude d'agrégats d'oxydes de terres raresNicolas, David 14 June 2007 (has links) (PDF)
Ce travail concerne la synthèse et l'étude de nanoparticules d'oxydes de terres rares. Les agrégats sont synthétisés par LECBD (Low Energy Cluster Beam Deposition) puis déposés sur différents substrats pour analyse. La spectroscopie de photoélectrons X montre que les agrégats produits possèdent la stoechiométrie du matériau massif. Les dépôts sont imagés par microscopie électronique. Dans les conditions usuelles les agrégats déposés ont une taille faiblement dispersée autour d'une valeur moyenne de 3 nm. Les agrégats sont alors cristallisés et présentent une forme particulière, le dodécaèdre rhombique. La conservation de la structure cristalline ainsi que la stabilité particulière du dodécaèdre rhombique sont discutées en relation avec les propriétés de la liaison ionique. Les propriétés de luminescence de Gd2O3 dopé Eu3+ ont permis de mettre en évidence une transition de structure pour les agrégats de très petite taille. Cette transition peut être expliquée par la pression de Gibbs induite par la tension de surface. La simulation de la luminescence des agrégats montre l'influence importante de la surface dans l'élargissement inhomogène des spectres de luminescence des nanoparticules. Le confinement quantique dans Gd2O3 dopé Eu3+ est démontré. Le comportement observé présente des similitudes avec celui de matériaux moins ioniques. Une interprétation est proposée.
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Surface modification of group 14 nanocrystalsKelly, Joel Alexander Unknown Date
No description available.
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Fundamental Study on Si Nanowires for Advanced MOSFETs and Light-Emitting Devices / 先端MOSFETおよび発光デバイスを目指したSiナノワイヤの基礎研究Yoshioka, Hironori 23 July 2010 (has links)
Kyoto University (京都大学) / 0048 / 新制・課程博士 / 博士(工学) / 甲第15612号 / 工博第3301号 / 新制||工||1498(附属図書館) / 28139 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 木本 恒暢, 教授 藤田 静雄, 准教授 山田 啓文 / 学位規則第4条第1項該当
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Fundamental Study on Carrier Transport in Si Nanowire MOSFETs with Smooth Nanowire Surfaces / 表面平坦化処理を施したSiナノワイヤMOSFETにおけるキャリヤ輸送の基礎研究Morioka, Naoya 24 March 2014 (has links)
京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第18286号 / 工博第3878号 / 新制||工||1595(附属図書館) / 31144 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 木本 恒暢, 教授 白石 誠司, 准教授 浅野 卓 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM
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Study of Metal-Insulator-Metal Diodes for PhotodetectionLi, Li 29 May 2013 (has links)
No description available.
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Synthesis and AB-Initio Simulations of Colloidal PBS NanosheetsBhandari, Ghadendra B. 16 July 2014 (has links)
No description available.
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Electronic Transport Properties of Nanonstructured Semiconductors: Temperature Dependence and Size EffectsReynolds, Bryan 28 June 2016 (has links)
No description available.
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Electronic excited states in quasi- one- dimensional organic solids with strong coupling of Frenkel and charge-transfer excitons / Anregte elektronische Zustände in quasi-eindimensionalen organischen Festkörpern mit starker Kopplung zwischen Frenkel und Charge-Transfer ExzitonenSchmidt, Karin 26 February 2003 (has links) (PDF)
This work offers a concept to predict and comprehend the electronic excited states in regular aggregates formed of quasi-one-dimensional organic materials. The tight face-to-face stacking of the molecules justifies the idealization of the crystals and clusters as weakly interacting stacks with leading effects taking place within the columnar sub-structures. Thus, the concept of the small radius exciton theory in linear molecular chains was adopted to examine the excitonic states. The excited states are composed of molecular excitations and nearest neighbor charge transfer (CT) excitations. We analyzed the structure and properties of the excited states which result from the coupling of Frenkel and CT excitons of arbitrary strength in finite chains with idealized free ends. With the help of a partially analytical approach to determine the excitonic states of mixed Frenkel CT character by introducing a complex wave vector, two main types of states can be distinguished. The majority of states are bulk states with purely imaginary wavevector. The dispersion relation of these state matches exactly the dispersion relation known from the infinite chain. The internal structure of the excitons in infinite chains is directly transferred to the bulk states in finite chains. TAMM-like surface states belong to the second class of states. Owing to the damping mediated by a a non-vanishing real part of the wavevector, the wave function of the surface states is localized at the outermost molecules. The corresponding decay length is exclusively determined by the parameterization of the coupling and is independent of the system size. It can therefore be assigned as a characteristic quantum length which plays a vital role for the understanding of system-dependent behavior of the states. The number and type of surface states occurring is predicted for any arbitrary coupling situation. The different nature of bulk and surface states leads to distinct quantum confinement effects. Two regimes are distinguished. The first regime, the case of weak confinement, is realized if the chain length is larger than the intrinsic length. Both kinds of states arrange with the system size according to their nature. Derived from the excitonic states of the infinite chain, the bulk states preserve their quasi-particle character in these large systems. Considered as a quasi-particle confined in box, they change their energy with the system size according to the particle-in-a-box picture. The surface states do not react to a change of the chain length at all, since effectively only the outermost molecules contribute to the wavefunction. The second regime holds if the states are strongly confined, i.e., the system is smaller than the intrinsic length. Both types of states give up their typical behavior and adopt similar properties. / Diese Arbeit unterbreitet ein Konzept, um elektronische Anregungszustände in Aggregaten quasi-eindimensionaler organischer Materialien vorherzusagen und zu verstehen. Die dichte Packung der Moleküle rechtfertigt die Idealisierung der Kristalle bzw. Cluster als schwach wechselwirkende Stapel, wobei die führenden Effekte innerhalb der Molekülstapel zu erwarten sind. Zur Beschreibung der exzitonischen Zustände wurde das Konzept der 'small radius'-Exzitonen in linearen Molekülketten angewandt. Die elektronischen Zustände sind dabei aus molekularen (Frenkel) und nächsten Nachbarn 'charge-transfer' (CT) Anregungen zusammengesetzt. Die Struktur und Eigenschaften der Zustände wurden für beliebige Kopplungsstärken zwischen Frenkel- und CT Anregungen in Ketten mit idealisierten freien Enden für beliebiger Längen analysiert. Der entwickelte, überwiegend analytische Zugang, welcher auf der Einführung eines komplexen Wellenvektors beruht, ermöglicht die Unterscheidung zweier grundsätzlicher Zustandstypen. Die Mehrheit der Zustände sind Volumenzustände mit rein imaginärem Wellenvektor. Die zugehörige Dispersionsrelation entspricht exakt der Dispersionsrelation der unendlichen Kette mit äquivalenten Kopplungsverhältnissen. Die interne Struktur der Exzitonen der unendlichen Kette wird auf die Volumenzustände der endlichen Kette direkt übertragen. Der zweite grundlegende Zustandstyp umfaßt Tamm-artige Oberflächenzustände. Aufgrund der durch einen nichtverschwindenden reellen Anteil des Wellenvektors hervorgerufenen Dämpfung sind die Wellenfunktionen der Oberflächenzustände an den Randmolekülen lokalisiert. Die entsprechende Dämpfungslänge ist ausschließlich durch die Parametrisierung der Kopplungen bestimmt und ist somit unabhängig von der Kettenlänge. Sie kann daher als intrinische Quantenlänge interpretiert werden, welche von essentieller Bedeutung für das Verständnis systemgrößenabhängigen Verhaltens ist. Sowohl die Anzahl als auch die Art der Oberflächenzustände kann für jede Kopplungssituation vorhergesagt werden. Die unterschiedliche Natur der Volumen- und Oberflächenzustände führt auf ausgeprägte 'Quantum confinement' Effekte. Zwei Regime sind zu unterscheiden. Im Falle des ersten Regimes, dem schwachen 'Confinement', ist die Kettenlänge größer als die intrinsische Länge. Beide Zustandarten reagieren auf eine Veränderung der Kettenlänge gemäß ihrer Natur. Aufgrund ihrer Verwandschaft mit den Bandzuständen der unendlichen Kette bewahren die Volumenzustände ihren Quasiteilchen-Charakter. Aufgefaßt als Quasiteilchen, erfahren sie in endlichen Systemen eine energetische Verschiebung gemäß dem Potentialtopf-Modell. Oberflächenzustände zeigen keine Reaktion auf veränderte Kettenlängen, da effektiv nur die Randmoleküle zur Wellenfunktion beitragen. Es findet ein Übergang zum zweiten Regime (starkes 'Confinement') statt, sobald die Kettenlänge kleiner als intrinsische Quantenlänge wird. Beide Zustandsarten geben ihr typisches Verhalten auf und werden mit abnehmender Kettenlänge zunehmend ähnlicher.
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