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L'intégration de composés semi-conducteurs III-V sur silicium devrait conduire au développement de nouveaux dispositifs micro- et optoélectroniques performants. Le composé InGaAs de haute mobilité électronique est un candidat prometteur pour le transistor métal-oxyde-semiconducteur à effet de champ à canal n au-delà du noeud technologique 10 nm. En outre les semi-conducteurs III-V sont aussi des matériaux appropriés pour la fabrication de composants optiques (lasers, diodes) et de dispositifs analogiques ultra-haute fréquence et leur intégration sur une plateforme Si ajoutera de nouvelles fonctionnalités pour le réseau de communications optiques. Cependant la miniaturisation des dispositifs et leur intégration dans les architectures 3D nécessitent le développement de méthodes de caractérisation avancées pour fournir des informations sur leur composition physico-chimique avec une résolution à l'échelle nanométrique.Dans cette thèse, les études physico-chimiques des hétérostructures III-V directement élaborées sur plaquettes de Si 300 mm par épitaxie en phase vapeur sont adressées. Les techniques de spectrométrie de masse d'ions secondaires sont utilisées et développées dans le but d'étudier la raideur des interfaces, la composition chimique et le dopage de couches III-V minces dans des architectures 2D et 3D avec une bonne résolution en profondeur. L'analyse quantitative précise sur un puits quantique InGaAs (PQ) pour des architectures 2D et 3D a été réalisée en utilisant les techniques SIMS magnétique et Auger. Pour obtenir le profil chimique des structures III-V étroites et répétitives, une méthode de moyenne des profils a été développée pour ces deux techniques. Egalement, la reconstruction 3D et le profil en profondeur de tranchées individuelles (moins de cent nanomètres de largeur) contenant un PQ d’InGaAs mince obtenu par croissance sélective dans des cavités de dioxyde de silicium en utilisant la méthode de piégeage des défauts par rapport d’aspect ont été obtenus avec succès en utilisant le SIMS à temps de vol ainsi que la sonde atomique tomographique. Enfin, les résultats ont été corrélés avec des mesures de photoluminescence. / The integration of III-V semiconductor compounds on silicon should lead to the development of new highly efficient micro- and opto-electronic devices. High mobility InGaAs material is a promising candidate for n-channel metal-oxide semiconductor field-effect transistor beyond the 10 nm technology node. Moreover III-V semiconductors are also suitable materials for fabrication of optical (lasers, diodes) and ultra-high frequency analog devices and their integration on a Si platform will add new functionalities for optical network and communication. However the miniaturization of devices and their integration into 3D architectures require the development of advanced characterization methods to provide information on their physico-chemical composition with nanometer scale resolution.In this thesis, the physico-chemical studies of III-As heterostructures directly grown on 300 mm Si wafers by metalorganic vapor phase epitaxy are addressed. Secondary ion mass spectrometry techniques are used and developed in order to study interfaces abruptness, chemical composition and doping of III-V thin layers in 2D and 3D architectures with high depth resolution. The accurate quantitative analysis on InGaAs quantum wells (QWs) in 2D and 3D architectures was performed using magnetic SIMS and Auger techniques. To obtain the chemical profiling of narrow and repetitive III-V structures the averaging profiling method was developed for both techniques. Additionally, 3D reconstruction and depth profiling of individual trenches (less than hundred nanometer in width) containing thin InGaAs QWs selectively grown in silicon dioxide cavities using the aspect ratio trapping method were successfully obtained using Time-of-flight SIMS and atom probe tomography. Finally, the results were correlated with photoluminescence measurements.

Les dispositifs microélectroniques réalisés en technologie silicium possèdent des limitations intrinsèques liées à ce matériau et ses dérivés (Si, SiO2, SiGe…). Une des solutions pour proposer à l’avenir des performances accrues passe par l’introduction de nouveaux matériaux en technologie silicium. De bons candidats pour le remplacement du silicium en tant que canal de conduction sont les semi-conducteurs III-V à base d’arséniures (III-As) pour bénéficier de leurs propriétés de transport électronique exceptionnelles. Cependant, en préliminaire à la réalisation de tels dispositifs, il faut obtenir des couches de III-As de bonne qualité cristalline sur des substrats de silicium. Ces deux matériaux montrent en effet des différences de propriétés que l’on se propose de surmonter au cours de ces travaux par des stratégies de croissance cristalline.Ces travaux de thèse portent sur l’étude en détail des croissances de couches de matériaux GaAs et InGaAs, sur des substrats de silicium de 300 mm de diamètres et par épitaxie en phase vapeur aux organométalliques. Dans un premier temps, des efforts seront menés afin d’éliminer un des défauts cristallins les plus rédhibitoires pour l’utilisation de ces matériaux, à savoir les parois d’antiphase. Puis, la réalisation d’hétérostructures quantiques III-As permettra, via des analyses d’émissions optiques (photo- et cathodoluminescence), de rendre compte de la qualité globale ainsi que locale des couches ainsi épitaxiées. Enfin, des croissances localisées dans des motifs décananométriques préalablement réalisés sur les substrats de silicium seront conduites dans le but de comprendre les mécanismes de réduction des défauts pour ces géométries. / The microelectronic devices designed in the silicon technology field are intrinsically limited due to the nature of this material and its derivatives (Si, SiO2, SiGe…). One of the solutions to further reach enhanced performances lies in the introduction of new materials within silicon technology. Good candidates for silicon replacement as a conduction channel are the arsenide-based III-V semiconductors (III-As), in order to benefit from their outstanding electronic transfer properties. However, as a preliminary for the achievement of such devices, III-As films with good crystalline quality have to be obtained on silicon substrates. Indeed, those two materials display properties differences this work intends to overcome by following crystalline growth strategies.This PhD work deeply study the growth of GaAs and InGaAs films on 300 mm-diameter silicon substrates by metalorganic vapour phase epitaxy. In the first instance, efforts will be put on the elimination of one of the crystalline defects being the most prohibitive for the use of such materials: antiphase boundaries. Then, the achievement of III-As quantum heterostructures will enable, by optical emission analysis (photo- and cathodoluminescence), to reflect the global and local quality of the resultant epitaxial films. Finally, localised growth, in decananometric designs, preliminary performed on silicon substrates, will be carried out, with the aim of understanding the defects reduction mechanisms for those geometries.

[pt] Nas Forças Armadas do Brasil existe uma forte demanda pelo desenvolvimento de detectores de infravermelho nacionais para uso em diversas aplicações sujeitas a rígidas restrições de importação, como sistemas de imageamento infravermelho para visão noturna, guiamento de mísseis, sistemas de mira, etc. O objetivo deste trabalho foi desenvolver fotodetectores para o infravermelho distante em 10µm, baseados em estruturas semicondutoras de poços quânticos múltiplos de GaAs/AlGaAs utilizando transições intrabanda. Os materiais foram crescidos pela técnica de epitaxia de fase vapor de metalorgânicos (MOVPE). A calibração dos parâmetros de crescimento foi realizada por meio de medidas de difração de raios x, efeito Hall, e fotoluminescência. Devido à regra de seleção de que não é possível haver absorção intrabanda da luz sob incidência normal, foram aplicadas duas técnicas de acoplamento: geometria de guia de onda com incidência a 45º pela borda, e utilização de grades de difração metalizadas. Os detectores produzidos foram caracterizados quanto à corrente de escuro e quanto aos espectros de absorção óptica e de fotocorrente, ambos obtidos por espectroscopia FTIR. Ao final dos trabalhos, foi obtido um fotodetector de GaAs/AlGaAs do qual foi possível medir a fotocorrente através dos contatos elétricos do dispositivo, com pico em 9µm. Os resultados obtidos são promissores no sentido de que apontam para a possibilidade de se produzir detectores de infravermelho nacionais para diversas aplicações (defesa, medicina, astronomia, telecomunicações, etc). / [en] In the Brazilian Army there is a strong demand for the development of national infrared detectors for use in many applications subjected to severe trade restrictions, like infrared imaging systems for night vision, missile guidance, sight systems, etc. The aim of this work was to develop far- infrared photodetectors for 10µm, based on semiconductor structures of GaAs/AlGaAs multi-quantum wells using intraband transitions. The materials were grown by metalorganic vapor phase epitaxy (MOVPE). The calibration of the growing parameters was done by x ray diffraction, Hall effect, and photoluminescence measurements. Since intraband transition of light is not possible to normal incidence, due to selection rules, two coupling techniques were applied: waveguide geometry with 45o incidence on the edge, and metalized diffraction gratings. The produced detectors were characterized in terms of dark current, optical absorption and spectral response. Infrared measurements were made using FTIR spectroscopy. A GaAs/AlGaAs photodetector was obtained. The photocurrent through the electrical contacts of the device showed a peak at 9µm. The results are promising in the sense of revealing the possibility of producing national infrared photodetectors for many applications (defense, medicine, astronomy, telecommunications, etc).

Since Shuji Nakamura, Hiroshi Amano, and Isamu Akasaki won the 2014 Nobel prize in Physics owing to theircontributions on the invention of efficient blue GaN light emitting diodes, GaN became an even more appealingmaterial system in the research field of optoelectronics. On the other hand, quantum structures or low-dimensionalstructures with properties derived from quantum physics demonstrate superior and unique electrical and opticalproperties, providing a significant potential on novel optoelectronic applications based on the employment of quantumconfinement.   In 2012, our research team at Linköping University utilized pyramid templates, which is an established approach toform quantum structures, to successfully grow GaN pyramids with InGaN hybrid quantum structures, includingquantum wells, quantum wires, and quantum dots. This growth enabled site-controlled pyramids based on selectivearea growth (SAG). After numerous studies on the photoluminescence properties, the mature and controlled growthtechnique was proposed to be adapted for fabrication of AlGaN pyramids on which GaN hybrid quantum structurescan be hosted.   This thesis is dedicated to the subsequent problems of the growth of AlGaN pyramids. It was found that there wasan undesired deposition of a considerable thickness on top the desired AlGaN pyramid with GaN multiple quantumwells. In this thesis, two different directions are explored to find the key solution with a potential of furtheroptimization. On one hand, the growth parameters such as precursors cut-off, carrier gas during cooling, temperatureholding, cooling pressure, III/V ratio, and the possible effect of GaN surfaces are investigated. However, due to theactual inherent properties of the metal-organic chemical vapor deposition reactor used, no promising parameter tuningcan been identified. On the other hand, from post-growth point of view, a KOH aqueous etching solution exhibits apositive result toward removing the undesired deposition. This etching process is suggested to be further optimized toachieve the final goal of eliminating the undesired deposition.

Les nanofils de ZnO à puits quantiques et le dopage p par implantation ionique d'azote sont étudiés pour la fabrication de LED ultra-violettes. Des pyramides de polarité O et des nanofils de polarité Zn sur substrats de saphir et ZnO sont élaborés. La croissance organisée de nanofils sur ZnO de polarité Zn est démontrée. De même, des pyramides ou des nanofils de GaN sont obtenus sur GaN de polarité Ga ou N. Sur saphir, l'élimination des dislocations dans les pyramides sous-jacentes aux nanofils est analysée. Les nanofils sans défauts structuraux permettent l'élaboration de puits quantiques coeur-coquille ZnO/Zn(1-x)MgxO. La relaxation plastique dans les nanofils est étudiée, puis la composition en Mg est optimisée pour l'éviter et atteindre un rendement quantique interne de 54%. Concernant l'implantation, les défauts sont identifiés avant et après recuit. Ils disparaissent en surface, d'où une guérison facilitée des nanofils. Un matériau guéri avec des accepteurs activés n'est pas obtenu. / Quantum well ZnO nanowires and p-type doping by nitrogen ion implantation are studied to make ultraviolet light-emitting diodes. O-polar pyramids and Zn-polar nanowires on sapphire and ZnO substrates are grown. Organized growth of nanowires on a masked Zn-polar ZnO is demonstrated. Similarly, GaN pyramids and nanowires are grown on Ga and N-polar GaN respectively. On sapphire, the dislocation elimination in the underlying pyramids is analyzed. Nanowires with no structural defects allow the growth of ZnO / Zn (1-x) Mg x O core-shell quantum wells. Plastic relaxation is studied, and the Mg composition is optimized to avoid it and attain an internal quantum efficiency as high as 54%. Concerning ion implantation, the defects are identified before and after annealing. They disappear in the near-surface, which lead to an easier recovery of nanowires compared to bulk ZnO. However, a recovered material with activated acceptors is not obtained.

Ce mémoire résume des efforts dans la conception électronique, la croissance épitaxiale et la caractérisation des puits quantiques GaN/Al(Ga)N qui constituent la région active des composants inter-sous-bande (ISB) à base de semi-conducteurs nitrures pour l'optoélectronique dans l'infrarouge proche, moyen et lointain. Le dessin des puits quantiques GaN/Al(Ga)N pour ajuster la longueur d'onde d'absorption dans le spectre infrarouge a été réalisé en utilisant la méthode k.p à 8 bandes du logiciel Nextnano3 pour la résolution des équations de Schrödinger-Poisson. Les structures ont été synthétisées par épitaxie par jets moléculaires assistée par plasma (PAMBE). Les problèmes de gestion de la contrainte qui apparaissent liés au désaccord de maille pendant la croissance épitaxiale des hétérostructures GaN/Al(Ga)N ont été investigués par combinaison de techniques in-situ et ex-situ. La couche tampon optimale, la teneur en aluminium et les mécanismes de relaxation pendant la croissance par PAMBE ont été déterminés. Pour obtenir une absorption ISB efficace, on a besoin de niveaux élevés de dopage au silicium dans le puits quantiques, situation dans laquelle les théories à une particule conduisent à des déviations significatives par rapport aux résultats expérimentaux. Donc une étude du dopage au silicium des super-réseaux GaN/Al(Ga)N pour les régions spectrales infrarouges proche et moyen est présentée. Ce travail contient aussi une contribution à la compréhension de la technologie de photodétection à cascade quantique. Des résultats importants tels que l'obtention de photodétecteurs cascade fonctionnant à 1.5 µm et dans la plage spectrale de 3-5 µm sont démontrés. Finalement, on décrit la première observation de l'absorption ISB dans l'infrarouge lointain (4.2 THz) utilisant des nanostructures à base de semi-conducteurs nitrures. / This work reports on electronic design, epitaxial growth and characterization of GaN/Al(Ga)N quantum wells which constitute the active region of intersubband (ISB) devices for near-, mid- and far-infrared. The design of the GaN/Al(Ga)N quantum wells to tune the ISB transitions in the infrared spectrum was performed using the 8-band k.p Schrödinger-Poisson Nextnano3 solver. The investigated structures were synthesized using plasma-assisted molecular beam epitaxy (PAMBE). The strain issues arising due to the lattice mismatch during the epitaxial growth of GaN/Al(Ga)N heterostructures are investigated by combination of in-situ and ex-situ techniques. The optimal buffer layer, Al content and relaxation mechanisms during the PAMBE growth are determined. Achieving efficient ISB absorption at longer wavelengths requires heavy silicon doping of the quantum wells, so that the single-particle theory leads to a large discrepancy with the experimental results. Therefore, a study of silicon doping of GaN/Al(Ga)N superlattices for near- and mid-infrared spectral region are presented. This work also contributes to a better understanding of the infrared quantum cascade detector technology. Relevant achievements of room-temperature detection at 1.5 µm and 3-5 µm spectral range are demonstrated. Finally, the first observation of far-infrared (4.2 THz) ISB absorption in III-nitrides is reported.

Since a decade, spintronics and related physics have attracted considerable attention due to the massive research conducted in these areas. The main reason for growing interest in these fields is the expectation to use the electrons spin instead of or in addition to the charge for the applications in spin-based electronics, quantum information, and quantum computation. A prime concern for these spins to be possible candidates for carrying information is the ability to coherently control them on the time scales much faster than the decoherence times. This thesis reports on the spin dynamics in two-dimensional electron gases hosted in artificially grown III-V semiconductor quantum wells. Here we present a series of experiments utilizing the techniques to optically control the spin polarization triggered by either optical or electrical methods i.e. well known pump-probe technique and current-induced spin polarization. We investigated the spin coherence in high mobility dense two-dimensional electron gas confined in GaAs/AlGaAs double and triple quantum wells, and, it\'s dephasing on the experimental parameters like applied magnetic field, optical power, pump-probe delay and excitation wavelength. We have also studied the large spin relaxation anisotropy and the influence of sample temperature on the long-lived spin coherence in triple quantum well structure. The anisotropy was studied as a function sample temperature, pump-probe delay time, and excitation power, where, the coherent spin dynamics was measured in a broad range of temperature from 5 K up to 250 K using time-resolved Kerr rotation and resonant spin amplification. Additionally, the influence of Al concentration on the spin dynamics of AlGaAs/AlAs QWs was studied. Where, the composition engineering in the studied structures allows tuning of the spin dephasing time and electron g-factor. Finally, we studied the macroscopic transverse drift of long current-induced spin coherence using non-local Kerr rotation measurements, based on the optical resonant amplification of the electrically-induced polarization. Significant spatial variation of the electron g-factor and the coherence times in the nanosecond scale transported away half-millimeter distances in a direction transverse to the applied electric field was observed. / Há uma década, a spintrônica e outras áreas relacionadas vêm atraindo considerável atenção, devido a enorme quantidade de pesquisa conduzidas por elas. A principal razão para o crescente interesse neste campo é a expectativa da aplicação do controle do spin do elétron no lugar ou em adição à carga, em dispositivos eletrônicos e informação e computação quânticas. A possibilidade destes spins carregarem informação depende, primeiramente, da habilidade de controlá-los coerentemente, em uma escala de tempo muito mais rápida do que o tempo de decoerência. Esta tese trata da dinâmica de spins em gases de elétrons bidimensionais, em poços quânticos de semicondutores III-V, crescidos artificialmente. Nós apresentamos uma série de experimentos, utilizando técnicas para o controle ótico da polarização de spin, desencadeadas por métodos óticos ou eletrônicos, ou seja, técnicas conhecidas de bombeio e prova e polarização de spin induzida por corrente. Nós investigamos a coerência de spin em gases bidimensionais, confinados em poços quânticos duplos e triplos de GaAs/AlGaAs e a dependência da defasagem com parâmetros experimentais, como campo magnético externo, potência ótica, tempo entre os pulsos de bombeio e prova e comprimento de onda da excitação. Também estudamos a grande anisotropia de relaxação de spin como função da temperatura da amostra, potência de excitação e defasagem entre bombeio e prova, medidos para uma vasta gama de temperatura, entre 5K e 250K, usando Rotação de Kerr com Resolução Temporal (TRKR) e Amplificação Ressonante de Spin (RSA). Além disso estudamos a influência da concentração de Al na dinâmica dos poços de AlGaAs/AlAs, para o qual a engenharia da composição da estrutura permite sintonizar o tempo de defasagem de spin e o fator $ g $ do elétron. Por fim, estudamos a deriva transversal macroscópica da longa coerência de spin induzida por corrente, através de medidas de Rotação de Kerr não-locais, baseadas na amplificação ressonante ótica da polarização eletricamente induzida. Observamos uma variação espacial significante do fator $ g $ e do tempo de vida da coerência, na escala de nanosegundos, deslocada distâncias de meio milímetro na direção transversa ao campo magnético aplicado.

Orientador: Maria José Santos Pompeu Brasil / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física "Gleb Wataghin" / Made available in DSpace on 2018-08-17T05:37:13Z (GMT). No. of bitstreams: 1 GonzalezBalanta_MiguelAngel_M.pdf: 3522641 bytes, checksum: 4f38baba120bb574a54a03d7c1ebc335 (MD5) Previous issue date: 2010 / Resumo: Nesta dissertação investigamos os efeitos dos íons de Mn na dinâmica do spin de elétron em poços quânticos de InGaAs/GaAs. Os poços têm um gás de buracos gerado por dopagens em suas barreiras, sendo uma dopagem tipo delta de Mn numa das barreiras e uma dopagem tipo delta de C, na outra. A densidade de buracos foi determinada mediante medidas de transporte e são consistentes com as densidades obtidas das energias de Stokeshift. Utilizamos diversas técnicas ópticas, como a fotoluminescência no modo contínuo (PL-CW) e resolvida no tempo (PL-RT), a fotoluminescência de excitação (PLE-CW), e o efeito Hanle óptico, sempre usando luz circularmente polarizada para excitação e analisando a polarização circular da luz emitida. Comparamos os tempos de vida ( ? ) e de relaxação do spin ( ? s) dos elétrons obtidos através destas técnicas e discutimos as diferenças intrínsecas destes métodos e o significado físico dos parâmetros fornecidos por eles. Analisamos também o efeito da presença dos íons de Mn, que são íons magnéticos, sobre os tempos vida e de spin dos elétrons em uma série de amostras com diferentes quantidades de Mn incluindo a amostra de referencia sem Mn. Os resultados encontrados revelam um limite para a concentração de Mn, para a qual ambos, ? e ? s, apresentam uma queda abruta. Surpreendentemente, esta queda não afeita o grau de polarização CW, pois a razão ?/? s que determina este parâmetro permanece basicamente constante para todas as amostras / Abstract: We have studied the effect of Mn ions on the spin-relaxation of electrons in a InGaAs/GaAs quantum well (QW). The QW has a two-dimensional hole-gas generated by doping the barriers, whereas one of the barriers has a Mn-planar layer and the other one, a C planarlayer. The hole densities were determined by Shubnikov-de-Haas oscillations and are consistent with the Stokes-shift energies obtained by optical measurements. We have performed continuouswave photoluminescence measurements (CW-PL), excitation photoluminescence (CW-PLE), timeresolved (TR-PL), and Hanle effect with circularly polarized excitation and detection. We compare the lifetime ( ? ) and the spin relaxation time ( ? s) obtained using those techniques and we discuss the differences between the various techniques and the physical meaning of those parameters. We also analyze the effect of Mn ions on ? s and ? for the series of samples with different Mn concentrations, including a reference sample with no Mn doping. The results revealed a threshold of Mn concentration at which both, and ? s, show a strong and abrupt fall. Surprisingly, this fall does not affect the CW effective polarization degree, since the ratio s that determines this parameter remains basically constant for all samples / Mestrado / Física da Matéria Condensada / Mestre em Física

Orientador: Maria José Santos Pompeu Brasil / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-25T21:17:06Z (GMT). No. of bitstreams: 1 GonzalezBalanta_MiguelAngel_D.pdf: 5068966 bytes, checksum: c4aafc0a3e660efae9cc987f6dd987e5 (MD5) Previous issue date: 2014 / Resumo: Neste trabalho investigamos a interação entre portadores confinados em poços quânticos de InGaAs/GaAs e íons de Mn de uma dopagem tipo delta na barreira do poço. Utilizamos como base para este estudo dois tipos de estruturas. O primeiro tipo tem apenas a dopagem tipo delta de Mn e o segundo tipo, inclui duas camadas de dopagem tipo delta nas duas barreiras do poço, sendo uma dopagem de C e a outra de Mn. Observamos que a assimetria das estruturas devido às dopagens se reflete na interação dos portadores confinados com os íons de Mn. Os resultados indicam que esta interação se torna relativamente mais forte no conjunto de amostras com dopagem assimétrica apenas de Mn. Em nossa investigação, utilizamos diversas técnicas ópticas como fotoluminescência, fotoluminescência de excitação e fotoluminescência resolvida no tempo, incluindo análises da polarização da luz emitida e efeitos de campo magnético. Apesar da separação espacial entre os íons de Mn e os portadores confinados no poço, observamos vários efeitos que associamos a interação entre estas entidades. Observamos uma significativa amplificação da intensidade da força de oscilador de transições proibidas do poço em estruturas dopadas apenas com Mn. Este efeito foi interpretado como uma possível indicação da formação de polarons magnéticos ligados. Nas medidas com campo magnético, vimos que o grau de polarização dos portadores apresenta uma componente associada à presença dos íons de Mn. Esta componente, dominante apenas a baixos campos magnéticos, segue uma função tipo Brillouin associada a sistemas ferromagnéticos. Dependendo do perfil da estrutura, esta componente pode ter seu sinal invertido, levando a uma dependência da polarização com o campo magnético anômala. Finalmente, realizamos um estudo detalhado da dinâmica de polarização dos portadores com medidas de fotoluminescência resolvida no tempo. Desenvolvemos uma técnica especial envolvendo dois feixes de laser pulsados com controle tanto da separação temporal entre seus pulsos, quanto das suas polarizações circulares, que podiam ser iguais ou invertidas. Observamos que o grau de polarização gerado por um pulso é alterado se logo antes dele (centenas de pico-segundos), a amostra é excitada com pulso com polarização invertida. Associamos este efeito a um tipo de memória de polarização relacionada com a magnetização óptica dos íons de Mn. Assim, a excitação com luz circularmente polarizada gera portadores com spin preferencial, que atuam sobre os íons magnéticos, e que por sua vez afetam a polarização dos próprios portadores, agindo como um reservatório de polarização devido aos tempos de spin relativamente mais longos dos íons de Mn. Notamos que os efeitos mencionados acima são consideravelmente mais fortes no conjunto de amostras apenas com dopagens de Mn que devem apresentar um perfil de potencial mais assimétrico. Também obtivemos resultados consistentes que demonstram que estes efeitos tendem a diminuir quando a quantidade de Mn na camada delta é reduzida, quando a separação entre a camada delta de Mn e o poço quântico é aumentada, e quando aumentamos a temperatura do sistema. Em especial, os efeitos tendem a desaparecer para temperaturas em torno de 60 K, consistente com os valores da temperatura de Curie obtida para amostras similares / Abstract: In this work we investigated the interaction between confined carriers in of InGaAs/GaAs quantum wells (QWs) and Mn ions from a Mn delta-doping at the barrier of the QW. We have used two types of structures in this study. Samples of the first type have only a Mn delta-doping at the QW barrier, while samples from the second type include an additional C delta-doping layer at the other barrier. We found that the asymmetry of the structures due to doping is reflected in the interaction of carriers confined in the well and the Mn ions. The results indicate that this interaction becomes relatively stronger in the set of samples with asymmetrical doping of Mn solely. In our research, we have performed continuous-wave photoluminescence (CW-PL), excitation photoluminescence (CW-PLE), time-resolved photoluminescence (TR-PL), including analysis of the polarization of the emitted light and effects of a magnetic field. Despite the spatial separation between the Mn ions and the carriers confined in the QW, we observed various effects attributed to the interaction between these entities. We observed a significant enhancement of the intensity of the oscillator strength from transitions that are prohibited for symmetric QWs for the Mn doped structures. This effect was interpreted as a possible indication of the formation of bound magnetic polarons (BMP). In the measurements under a magnetic field, we observed that the degree of polarization of the carrier has a component associated with the presence of Mn ions. This component dominates the polarization under small magnetic fields and follows a like-Brillouin function associated to ferromagnetic systems. Depending on the profile of the structure, this component may have its sign reversed, leading to an anomalous polarization dependency with magnetic field. Finally, we performed a detailed study of the dynamics of the polarization of the carriers with time-resolved photoluminescence. We have developed a special technique involving two pulsed beams with a variable time-delay and individually-controlled circular-polarizations, which could be equal or reversed. We observed that the degree of polarization generated by a pulse is changed if just before it (hundreds of pico seconds) the sample was excited with a pulse with reversed polarization. We associated this effect to a kind of polarization memory related to the optical magnetization of Mn ions. Therefore, the excitation with circularly-polarized light generates carriers with a preferential spin that might act on the magnetic ions. In turn, the polarized Mn ions must affect the spin-polarization of the carriers, acting as a reservoir of the polarization, due to the relatively longer spin times of the Mn ions. We noticed that all these effects are considerably stronger for the set of samples doped only with Mn, that should present a more asymmetric potential profile. We also obtained consistent results revealing that all these effects tend to decrease when the amount of Mn in the delta-layer is reduced, when the separation between the Mn layer and the QW is increased, and when we increase the temperature of the sample. In particular, the effects tend to disappear at temperatures around 60 K, in accordance with the Curie temperature found for similar samples / Doutorado / Física / Doutor em Ciências