Dans le domaine de l'intensification des procédés, la technologie des réacteurs-échangeurs occupe une place de choix. De tels équipements combinent opération en continu et efficacités en termes de transfert de chaleur, d'hydrodynamique, de mélange, de transfert de matière et de réaction. Ce travail porte sur l'étude du passage en continu d'une synthèse pharmaceutique dans un réacteur-échangeur innovant en carbure de silicium. La méthodologie suivie est fondée sur des méthodes expérimentales et théoriques, visant à caractériser à la fois l'équipement et l'application chimique. L'objectif a été d'aboutir à un procédé optimal permettant d'augmenter productivité et sélectivité tout en assurant des niveaux de sécurité élevés. Raman. / In the field of Process Intensification, manufacturers offer many technologies of heat exchanger reactors in terms of design, material and operating conditions range which make the choice of the optimal solution difficult to be performed. Such apparatuses combine a continuous operating with strongly coupled features of heat transfer, hydrodynamics, mixing, mass transfer and reaction. To assess the feasibility and potentialities of applications carried out in this kind of apparatus, a methodology has been developed and could be divided in three parts: the equipment characterisation, the considered application (physical properties of components, reaction kinetics, heat generated), the suitable intensified process (optimal design) and the associated operating conditions (optimal control). Related to this methodology, the present study aims to transpose to continuous and to intensify a Pierre Fabre’s pharmaceutical application. In fact, this application currently carried out in batch offers productivity limitations that could be get round using a continuous intensified reactor. In this way, a complete reaction characterisation based on calorimetric experiments has been performed and provided to the optimisation tool. The results highlight the need to control the pH level and the necessity to use an on-line analytic method, spectroscopy Raman. This technique leads to an easy transfer of the reaction in continuous in order to intensify it. Optimal conditions have been underlined in order to obtain a productivity of 100%.

Over the last decade, electronics operating at high temperatures have been increasingly demanded to support in situ sensing applications such as automotive, deep-well drilling and aerospace. However, few of these applications have requirements above 460 °C, as the surface temperature of Venus, which is a specific target for the seismic sensing application in this thesis. Due to its wide bandgap, Silicon Carbide (SiC) is a promising candidate to implement integrated circuits (ICs) operating in such extreme environments. In this thesis, various analog and mixed-signal ICs in 4H-SiC bipolar technology for high-temperature sensing applications are explored, in which the device performance variation over temperatures are considered. For this purpose, device modeling, circuit design, layout design, and device/circuit characterization are involved. In this thesis, the circuits are fabricated in two batches using similar technologies. In Batch 1, the first SiC sigma-delta modulator is demonstrated to operate up to 500 °C with a 30 dB peak SNDR. Its building blocks including a fully-differential amplifier, an integrator and a comparator are characterized individually to investigate the modulator performance variation over temperatures. In the succeeding Batch 2, a SiC electromechanical sigma-delta modulator is designed with a chosen Si capacitive sensor for seismic sensing on Venus. Its building blocks including a charge amplifier, a multiplier and an oscillator are designed. Compared to Batch 1, a smaller transistor and two metal-interconnects are used to implement higher integration ICs in Batch 2. Moreover, the first VBIC-based compact model featured with continuous-temperature scalability from 27 to 500 °C is developed based on the SiC transistor in Batch 1, in order to optimize the design of circuits in Batch 2. The demonstrated performance of ICs in Batch 1 show the feasibility to further develop the SiC readout ICs for seismic sensor system operating on Venus. / <p>QC 20170911</p>

Dans le contexte énergétique qui se profile, la production d’électricité par voie solaire thermodynamique s’avère une solution prometteuse, que ce soit pour des considérations économiques, d’échelle de production ou environnementales. Une voie d’amélioration du rendement des centrales solaires à tour consiste à utiliser des cycles thermodynamiques à haut rendement type cycles combinés. Cela nécessite de pouvoir fournir un fluide de travail pressurisé à très haute température (10bar et 1000°C minimum). Ce manuscrit présente les travaux menés afin de développer et de viabiliser un concept d’absorbeur solaire surfacique modulaire en céramique (carbure de silicium) capable de répondre à ces exigences. Le choix du carbure de silicium s’est imposé pour sa résistance aux hautes températures et aux problèmes d’oxydation. Cependant, l’utilisation d’une céramique comme matériau implique un risque de casse des modules. Les céramiques sont en effet fragiles lorsqu’elles sont soumises à des contraintes de traction. C’est la connaissance et la maitrise de ce risque qui fait l’objet de cette étude. L’approche adoptée combine le développement d’outils numériques et d’études expérimentales réalisées sur le site de la centrale solaire Thémis (Targassonne, 66, France). La méthodologie desimulation développée permet de prédire le comportement thermique et le comportement mécanique de l’absorbeur. Ceci permet de réduire les risques encourus par l’absorbeur et d’en connaitre les performances. Cette méthodologie a été éprouvée à l’aide des résultats expérimentaux. / For the future, using thermodynamical solar power plant seems to be a good solution to ensure electrical production. Solar tower plants are able to produce electricity in significant amount, are environmentally friendly and economically competitive. One way to increase the yield of these plants is using high efficiency thermodynamical cycles, like combined cycle. That requires to providing a working fluid at high temperature and high pressure (10bar and 1000°C at least). This PHD thesis presents the works performed to develop and enhance a concept of modular plate solar ceramic absorber that can ensure the required air production. We chose the silicon carbide as material due to its resistance to high temperatures and oxidation problems. The drawback is ceramic modules are weak to traction stresses. The study focuses on the knowledge and the control of this phenomenon. This work combines the developments of numerical tools and experimental studies performed at Thémis power plant (Targassonne, 66, FRANCE). The numerical method permits simulations to predict the thermal behavior and the mechanical behavior of a solar module absorber. It allows the reduction of the mechanical stresses undergone by solar receiver and the prediction of its performances. This methodology was tested using experimental results.

This thesis deals with lithiation of negative electrode li-ion batteries. In this thesis is used several electrode materials: carbon, FeCl3, lithiated carbon electrodes and silicon carbide. Reduction of irreversible capacity lithium-ion batteries leads to increased capacity and also we can use new materials as a positive electrode. Thesis deals with the differences in the properties of materials using lithiation and their use in practice

Dans la réalisation de nouveaux composants innovants de la spintronique, de grands espoirs sont placés sur les semi-conducteurs magnétiques dilués (DMS). L’enjeu technologique est de développer des matériaux ayant à la fois des propriétés semi-conductrices et ferromagnétiques. Le but de ce travail est de réaliser une étude nanostructurale et magnétique détaillée du système Fe :SiC candidat prometteur pour devenir un semi-conducteur magnétique dilué à température ambiante. Cependant les propriétés magnétiques du matériau (6H-SiC) implanté avec des métaux de transitions (MT) dépendent fortement de sa microstructure (concentration et nature du dopant, précipitation du dopant…). Afin d’appréhender l’ensemble des propriétés nanostructurales et magnétiques, nous avons étudié le système Fe :SiC à l’échelle de l’atome en utilisant la sonde atomique tomographique (SAT) couplée à la spectrométrie Mössbauer 57Fe. Des monocristaux 6H-SiC (0001) de type p et n (~10+18/cm3) ont été multi-implantés en 56Fe et 57Fe à différentes énergies et différentes fluences conduisant à une concentration atomique de (6% et 4%) de 20 à 120 nm de la surface. Dans le cadre de ce travail, nous avons pu suivre l’effet de la nanostructure du système Fe :SiC en fonction de la concentration de fer et des températures d’implantation et de recuit. Nous avons établi de nouveaux résultats : nature et dimension des nanoparticules, évaluation précise du nombre d’atomes de fer dilué dans la matrice SiC. Les différentes contributions ferromagnétiques et paramagnétiques sont identifiées et clairement expliquées grâce au couplage de techniques expérimentales comme la SAT, la spectrométrie Mössbauer, la magnétométrie SQUID (Superconducting Quantum Interference Device). Nous avons réussi à déterminer des conditions optimales pour l’obtention d’un DMS à température ambiante. En effet dans les échantillons implantés 4% Fe à 380°C, plus de 90% des atomes de Fe sont dilués. Ces atomes de Fe dilués contribuent majoritairement aux propriétés ferromagnétiques mesurées par SQUID et par spectrométrie Mössbauer à 300 K. Ces différents résultats expérimentaux mettent en lumière la possibilité de réalisation d’un nouveau (DMS) à température ambiante / Great hopes are placed on diluted magnetic semiconductors (DMS) for new components of spintronics. The challenge is to develop materials with both semiconducting and ferromagnetic properties. The aim of this work is to carry out a detailed nanostructural and magnetic study of the Fe: SiC candidate promising system to become a magnetic semiconductor diluted at room temperature. However, the magnetic properties observed in (6H-SiC) implanted with transition metals (TM) depend strongly on the material microstructure (content and nature of the dopant, precipitation of the dopant, etc.). In order to understand all the nanostructural and magnetic mechanisms, we studied the Fe: SiC system at the atomic scale using atom probe tomography (APT) and Mössbauer spectrometry. p and n single crystalline 6H-SiC near (0001)-oriented samples were submitted to multi-step implantations with 56Fe and 57Fe ions at different energies and fluences leading to an iron concentration (Cat =6 and 4%) at a depth between 20 nm and 120 nm from the sample surface. In this work, we were able to follow the effect of the nanostructure of the Fe: SiC system as a function of the iron concentration and the temperatures of implantations and annealing. We have established new results: nature and size of the nanoparticles, precise evaluation of the number of iron atoms diluted in the SiC matrix. The ferromagnetic and paramagnetic contributions are identified and clearly explained by the coupling of experimental techniques such as APT, Mössbauer spectrometry, SQUID (Superconducting Quantum Interference Device) magnetometry. We were able to put the material in optimal conditions for obtaining a DMS at room temperature. Indeed, the implanted samples (4% Fe) at 380°C more than 90% Fe atoms were distributed homogeneously. These Fe atoms are the main source of the ferromagnetic properties measured by SQUID and Mössbauer spectrometry at 300 K. These experimental results highlight the possibility of obtaining a new (DMS) at room temperature.

Ce travail de thèse porte sur l’étude du carbure de silicium, dopé avec du fer dans le but de réaliser un semi-conducteur magnétique dilué à température ambiante pour des applications à la spintronique. Le dopage en fer a été réalisé par implantation ionique de type multi-énergie (30 - 160 keV) à différentes fluences, conduisant à une concentration atomique constante de 2 % de 20 à 100 nm. Il a été suivi d’un recuit à haute température dans le but d’homogénéiser la concentration en dopants. Les implantations se sont déroulées à une température de 550 °C. L’optimisation des propriétés magnétiques et électroniques du SiC–Fe, de même que la compréhension des mécanismes physiques à l’origine du magnétisme induit, ont nécessité une caractérisation poussée de la microstructure des matériaux implantés. Les objectifs de ce travail ont été d’une part, de réaliser une étude à l’échelle atomique de la nanostructure en fonction des conditions d’implantations (température, fluence) et des traitements thermiques post-implantation, et d’autre part, de déterminer les propriétés magnétiques des matériaux implantés. Dans ce travail, nous avons montré par Sonde Atomique Tomographique, la présence de nanoparticules dont la taille moyenne augmente avec la température de recuit. La cartographie chimique des nanoparticules a permis de révéler l’existence de phases riches en Fe pour les échantillons recuits. L’étude magnétique (spectrométrie Mössbauer et Squid) a montré que la contribution ferromagnétique est due principalement aux nanoparticules magnétiques et/ ou aux atomes de fer magnétiques dilués dans la matrice. La corrélation entre les propriétés structurale et magnétique a permis de montrer que les atomes de fer dilués dans la matrice et substitués sur sites de silicium contribuent au signal ferromagnétique en dessous de 300 K. Nous avons donc montré dans ce travail, que la taille et la nature des phases présentes dans les nanoparticules dépendent des conditions d’implantation et des températures de recuit et qu’il est nécessaire de recuire les échantillons à haute température pour faire apparaître un ordre ferromagnétique. / This PhD thesis focuses on the study of SiC, doped with Fe in order to elaborate a diluted magnetic semiconductor at room temperature for spintronic applications. The iron doping was carried out by ion implantation of multi-energy type (30-160 keV) at different fluences, leading to a 2% constant atomic concentration between 20 to 100 nm, followed by a high temperature annealing in the goal of homogenizing the dopant concentration. The implantation temperature during this process is 550 °C, in order to avoid amorphization. The optimization of the magnetic and electronic properties of SiC-Fe, as well as the understanding of the physical mechanisms at the origin of induced magnetism, require a thorough characterization of the microstructure of the implanted materials. The objectives of this work are, on the one hand, to carry out an atomic scale study of the nanostructure according to the implantation conditions (temperature, fluence) and the post-implantation annealing and the other hand, to characterize the magnetic properties of implanted materials. In this work, we have shown by atom probe tomographic, the existence of nanoparticles whose the average size increases with the annealing temperature. The chemical mapping of the nanoparticles shows the presence of the Fe-rich phases for the annealed samples. Magnetic study (Mössbauer spectrometry and Squid) shows the ferromagnetic contribution is due to the magnetic nanoparticles and/or the diluted Fe atoms in the matrix. The correlation between structural and magnetic properties allowed showing that diluted Fe atoms and substitute to Si sites contribute to the ferromagnetic contribution below 300 K. In coupling many characterization techniques in order to give a detailed description of the different studied samples, we have shown that the size and nature of the phase present in the nanoparticles depend on the implantation conditions and the annealing temperatures and consequently it is necessary to anneal our samples at high temperature to reveal ferromagnetic order.

<p>Predviđena istraživanja u ovoj doktorskoj disertaciji su usmerena u<br />pravcu iznalaženja novih, efikasnijih i bržih mikrotalasno-stimulisanih<br />metoda hemijskih transformacija koje ne uključuju prisustvo<br />katalizatora i/ili organskih rastvarača. Primenom specijalnih silicijum-karbidnih reakcionih sudova, brzina i preciznost izvođenja<br />mikrotalasno-stimulisanih transformacija prikazana&nbsp; je kroz stresne<br />studije aktivnih farmaceutskih ingredijenata u SiC&nbsp; ploči, odnosno<br />HPLC/GC vialima kao reakcionim sudovima. Ispitano je postojanje<br />netermičkih mikrotalasnih efekata i njihov značaj za precizno tumačenje<br />rezultata mikrotalasne sinteze.<br />U drugom delu ove doktorske disertacije izvr&scaron;ena jemikrotalasno-stimulisana sinteza potencijalno biolo&scaron;ki aktivnih&nbsp; supstanci iz prirodnih<br />lako dostupnih materijala kao &scaron;to su naftenske kiseline. Sintetizovani su<br />amidi i estri individualnih i prirodnih naftenskih kiselina Velebit.<br />U radu je takođe ispitana biolo&scaron;ka aktivnost sintetizovanih derivata.<br />Proučavan je uticaj prirodnih naftnih kiselina Velebit injenih derivata<br />na rast pet sojeva&nbsp; Pseudomonassp., kao i uticaj odabranih sintetisanih<br />jedinjenja na proliferaciju pet&nbsp; ćelijskih linija humanih tumora pri&nbsp; čemu<br />je kao kontrola služila jedna zdrava humana ćelijska linija.</p> / <p>Scientific research predicted in this PhD thesis isdirected to ascertainment new, efficient and faster microwave-assisted methods of chemical transformations in the absence of catalysts and/or organic solvents. Applaying special silicon-carbide&nbsp; reaction vessels, speed and accuracy of microwave-assisted transformations are ilustrated within stress testing of active pharmaceutical ingredients in HPLC/GC vials placed in SiC plate. Existence of nonthermal microwave effects and their influence on &nbsp;accurate interpretation of microwave synthesis results are also investigated.&nbsp;<br />In the second part of this thesis microwave-assisted synthesis of potentionally biologically active compounds from readily available natural materials, such as &nbsp;naphthenic acid is accomplished. Amides and esters of individual and natural naphthenic acids Velebitare synthetised. The thesis also examined the biological activity ofthe synthesized products. The effect of natural petroleum acids&nbsp; Velebitand its derivatives are examined on the growth of five strains of Pseudomonas&nbsp;sp., and the impact of selected synthesized compounds on the proliferation of five human tumor cell lines in which a healthy human cell line is tused as the control.</p>

Abstract: Micro­Raman Spectroscopy Investigation of Hard Coatings Diamond, silicon carbide, and boron nitride have attracted great interest in the last years, due to their excellent material properties. Especially the extreme hardness and the high thermal con­ ductivity of these materials favour them as protective layers. The very large hardness gave these materials, deposited as films on various substrates, their name: hard coatings. In contrast to di­ amond, silicon carbide and boron nitride can be n­ as well as p­doped, making them promising candidates for high speed and high temperature electronic applications. Contrarily to the materials mentioned above, carbon nitride was obtained in crystalline form just very recently. Up to now the deposited films mainly consist of amorphous or nanocrystalline, carbon­rich material. For all these material systems inelastic light scattering (Raman spectroscopy) has been already applied for the material properties investigation. However, these investigations usually were restricted to only one of the various Raman spectroscopy tools, described in this work: Incident laser light energy varia­ tion, temperature variation, utilizing the selection rules, measurements at varying sample positions, two­dimensional mappings and one­dimensional scans in the conventional plane­view and the addi­ tional cross­sectional sample geometry. In contrast to this, this work demonstrates the improvement of the information about the investigated material and/or the sample heterostructure obtained by using the combination of all the above mentioned techniques. In the case of the diamond material system, films deposited on silicon substrates were investigated and an interfacial graphitic layer of 2nm thickness was found by scanning across the interface, which was obscured in the conven­ tional plane­view sample geometry. Similar to this an ultra­thin top layer and buried intermixed regions were identified in the silicon carbide material system utilizing the cross­sectional sample geometry. In addition to this, the temperature and the incident laser light energy dependences for 5 SiC polytypes (3C, 4H, 6H, 15R, and 21R) were measured. A resonance enhancement for the 3C and the 21R polytype was found corresponding to their fundamental bandgaps at 2.46eV and ß2.8eV, respectively. For the other polytypes no resonance enhancement was found, due to their larger fundamental bandgap. In the boron nitride material system the spatial correlation model for Raman lineshape analysis was applied for the first time and the values of the asymmetric broad­ ening and the frequency downshift for decreasing crystal sizes were evaluated. This was measured for single crystals of different size and for films deposited on silicon substrates. The correlation lengths in the ten nanometer region found for the deposited films corroborate the nanocrystalline nature of these films. Additionally incident laser light energy was measured, revealing the 488.0nm (Ar + ) and 482.5nm (Kr + ) laser lines as the optimum laser lines for the boron nitride investigation. Furthermore the dependence of the phonon feature parameters was investigated depending on the incident laser light power. A maximum power of 5­10mW for the micro­Raman spectroscopy setup was found to avoid any laser light induced heating of the investigated material. Two­dimensional mappings of the deposited boron nitride films were performed to improve the information about the material system. In the case of carbon nitride for the first time distinct phonon features were measured in a wide spectral range contrarily to most of the other investigations, which usually show only broad bands.

A tutorial review on cellular as well as nanoporous carbides covering their structure, synthesis and potential applications. Especially new carbide materials with a hierarchical pore structure are in focus. As a central theme silicon carbide based materials are picked out, but also titanium, tungsten and boron carbides, as well as carbide-derived carbons, are part of this review. / Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.

This work presents a 6.5-kV 1-kA SiC bipolar diode module for megawatt-range medium voltage converters. The study comprises a review of SiC devices and bipolar diodes, a description of the die and module technology, device characterization and modelling and benchmark of the device at converter level. The effects of current change rate, temperature variation, and different insulated-gate bipolar transistor (IGBT) modules for the switching cell, as well as parasitic oscillations are discussed. A comparison of the results with a commercial Si diode (6.5 kV and 1.2 kA) is included. The benchmark consists of an estimation of maximum converter output power, maximum switching frequency, losses and efficiency in a three level (3L) neutral point clamped (NPC) voltage-source converter (VSC) operating with SiC and Si diodes. The use of a model predictive control (MPC) algorithm to achieve higher efficiency levels is also discussed. The analysed diode module exhibits a very good performance regarding switching loss reduction, which allows an increase of at least 10 % in the output power of a 6-MVA converter. Alternatively, the switching frequency can be increased by 41 %.:1 Introduction 2 State of the art of SiC devices and medium-voltage diodes 2.1 Silicon carbide diodes and medium-voltage modules 2.2 Medium-voltage power diodes 3 Characterization of the SiC PiN diode module 37 3.1 Introduction 3.2 Experimental setup 3.3 Experimental results: static behaviour 3.4 Experimental results: switching behaviour 3.5 Comparison with 6.5-kV silicon diode 3.6 Oscillations in the SiC diode 3.7 Summary 4 Comparison at converter level 4.1 Introduction 4.2 Power device modelling 4.3 Determination of maximum converter power rating 4.4 Analysis 4.5 Increased efficiency through model predictive control 4.6 Summary 5 Conclusion