Les processus physico-chimiques se produisant au sein des nanoparticules que sont les boîtes quantiques semiconductrices (QDs) sont à l'origine d'une nouvelle classe de sondes fluorescentes trouvant des applications en catalyse, en reconnaissance moléculaire et en imagerie. Le confinement quantique des électrons aux sein de ces objets luminescents, qui donne lieu à leur structure excitonique si particulière, permet de tirer simultanément profit de leurs propriétés optiques d'absorption et d'émission dans la gamme spectrale visible, et ce, dans le but de faciliter la détection et l’identification des espèces chimiques situées dans leur environnement proche. Dans ce contexte, nous nous sommes intéressés à des QDs de 3 à 4 nm de diamètre, composées d’un alliage ternaire de cadmium, de tellure et de soufre, et fonctionnalisées par des ligands mercaptocarboxyliques. De manière à déterminer l’ensemble de leurs propriétés structurales, chimiques et optoélectroniques, nous les avons tout d’abord caractérisées à l’état de solutions colloïdales par diverses techniques expérimentales : microscopie électronique, zêta-métrie, analyse par diffusion dynamique de la lumière, spectroscopies de rayons X, d’absorption UV-visible et d’émission de fluorescence. Ceci nous a permis de déduire la composition chimique des nanocristaux, leur structure cristalline, leur taille, leur dispersion en taille, la composition chimique de leurs ligands, les énergies propres de leurs états électroniques, leur moments dipolaires de transition et leur section efficace d’absorption. Fort de ces connaissances, nous avons pu développer un modèle analytique pour calculer la susceptibilité diélectrique des QDs et extraire de cette manière leur fonction de réponse linéaire, véritable carte d’identité optoélectronique. Nous avons ensuite optimisé la conception par voie chimique d’interfaces composées de QDs et de différentes espèces moléculaires organiques, dépôts réalisés sous forme de monocouches ou de films épais sur des substrats solides plans de silicium, de verre et de fluorure de calcium fonctionnalisés par des organosilanes. Ces interfaces substrat/QDs/molécules ont alors été étudiées par spectroscopie linéaire d’absorption UV-visible et par spectroscopie optique non-linéaire de génération de fréquence-somme (SFG). La première nous a permis de déterminer la densité superficielle des QDs déposés et d’en caractériser la stabilité temporelle, et la seconde, qui combine deux lasers visible et infrarouge, d’identifier la signature vibrationnelle des ligands recouvrant les QDs. Grâce à ces échantillons, nous avons alors montré par spectroscopie SFG deux couleurs l’existence d’un couplage vibroélectronique entre les QDs et leur environnement moléculaire. En particulier, nous avons démontré que l’amplitude de vibration des modes moléculaires associés aux ligands des QDs et aux organosilanes greffés sur les substrats est maximale lorsque les QDs sont eux-mêmes stimulés par la lumière visible dans leur premier état excitonique. Cette démonstration expérimentale s’accompagne par ailleurs d’une démonstration théorique : en utilisant les diagrammes de Feynman dans l’espace des fréquences imaginaires de Matsubara, nous avons déterminé l’expression analytique de la susceptibilité non-linéaire d’ordre 2 du complexe QD/molécule. Nous avons alors vérifié que l’hypothèse d’un couplage dipolaire entre QDs et molécules menait à une modélisation de la réponse vibrationnelle SFG compatible avec les mesures expérimentales. De cette manière, l’existence d’un couplage vibroélectronique de nature dipolaire entre boîtes quantiques et molécules est attesté. / The different physico-chemical processes occurring within semiconductor quantum dots (QDs) give rise to a new class of fluorescent probes and a wide range of applications in catalysis, molecular recognition and imaging. Within these luminescent nanoparticles, the quantum confinement of electrons, which leads to their very special excitonic structure, allows us to benefit from both their absorption and emission optical properties, with the specific aim of fostering the detection and the identification of the chemical species located in their direct environment. Within this framework, we were interested in 3 to 4-nm-sized QDs composed of ternary alloys of cadmium, telluride and sulfur, and functionalized by mercaptocarboxylic ligands. In order to determine their structural, chemical and optoelectronic properties, we first characterized them thanks to several experimental techniques: electron microscopy, zeta potentiel measurements, dynamic light scattering analysis, X-ray, UV-visible and fluorescence spectroscopies. This enabled us to deduce the chemical composition of the nanocrystals, their crystal structure, size, size-dispersion, the chemical composition of their ligands, the eigenenergies of their electronic states, their transition dipole moments and absorption cross-sections. Given all those results, we succeeded in deriving an analytical model of the QD dielectric susceptibility and extracting in this way their linear response function. Then, we optimized the chemical synthesis of nanostructured interfaces made of QDs and various molecular species through the use of flat solid substrates of silicon, glass and calcium fluoride functionalized with organosilanes. These substrate/QDs/molecules interfaces were studied by linear UV-visible absorption spectroscopy and by sum-frequency generation non-linear optical spectroscopy (SFG). The former allowed us to determine the surface density of the deposited QDs and to characterize their stability over time, while the later, which combines two visible and infrared lasers, enabled us to identify the vibrational signature of the QD ligands. Thanks to those samples probed by two-colour SFG spectroscopy, we therefore shew the existence of a vibroelectronic coupling between QDs and their molecular surroundings. Especially, we demonstrated that the vibration amplitudes associated to the molecular modes of the QD ligands and the organosilanes grafted on the substrates are maximum when the QDs are excited by visible light into their first excitonic state. This experimental demonstration is further supported by theoretical considerations: Feynman diagrams in Matsubara imaginary-time representation were used to determine the analytical expression of the second-order nonlinear susceptibility of the QD/molecule bipartite system. We thus verified that the hypothesis of a dipolar coupling between QDs and molecules resulted in a modeling of the vibrational SFG response which proved to be in complete agreement with the experimental measurements. Thus, we evidenced the existence of a dipolar vibroelectronic coupling between quantum dots and molecules.

<p dir="ltr">In the realm of two-dimensional (2D) materials, monolayer (ML) transition metal dichalcogenides (TMDCs) have gained significant interest due to their direct bandgap transition, high carrier mobility, strong light-matter interaction, and robust spin and valley degrees of freedom, starkly contrasting their bulk counterparts. Owing to their large surface-to-volume ratio, the integration of ML TMDCs with other various 2D semiconductors and microcavities offers opportunities to study fundamental photo-physics processes at the heterointerfaces, paving the way for implementation of next-generation devices.</p><p dir="ltr">Chapter 1 provides a concise introduction to 2D materials, particularly TMDCs, and their fascinating optical and electronic properties. It examines the role of excitons in 2D materials, and the impact of energy transfer (ET) and charge transfer (CT) on exciton’s properties in TMDC through the construction of 2D van der Waals (vdW) heterostructures and coupling with optical microcavities. This chapter also delves into the potential enhancement of TMDCs’ optical properties by integrating 2D hybrid lead halide perovskites and ultra-thin three-dimensional (3D) halide perovskites with TMDCs. Furthermore, it sets the general context for light-matter interaction, another form of ET, considering both weak and strong coupling regimes.</p><p dir="ltr">Chapter 2 outlines the optical techniques employed to gather data for this work. A focus is placed on ultrafast optical techniques like transient absorption spectroscopy, which allow for direct probing and analysis of ET and CT dynamics at the heterointerface.</p><p dir="ltr">Photoinduced interfacial CT plays a critical role in the field of energy conversion involving vdW heterostructures constructed by inorganic nanostructures and organic materials. However, the control of atomic-scale stacking configurations to modulate charge separation at interfaces remains challenging. Chapter 3 aims to illustrate tunability of interfacial charge separation in a Type-II heterojunction between ML-WS₂ and an organic semiconducting molecule by rational design of relative stacking configurations using 2D perovskites as scaffoldings. This chapter investigates how different molecular stacking, face-to-face versus face-to-edge, affects CT at the heterointerface. Our findings reveal that the CT process heavily depends on the relative stacking configurations at the organic-TMDCs heterointerface, with charge separation being notably slowed down for face-to-edge configuration compared to face-to-face configuration. These investigations open new opportunities for designing efficient charge separation processes in energy conversion applications by judiciously engineering interfaces between organic and inorganic semiconductors, using 2D perovskites as scaffolds.</p><p dir="ltr">Though TMDCs’ large surface-to-volume ratios make them excellent platforms for studying interfacial properties, the presence of bulky ligands on the surface of 2D perovskite poses a challenge, impeding direct interfacial coupling in their heterostructures. Chapter 4 details the fabrication of ML-WS₂ and ultra-thin CH₃NH₃PbX₃ (MAPbX₃, X=Br, I) heterostructures with tunable energy levels, to study the dynamics of CT and ET at these hybrid interfaces. Notably, heterojunctions of WS₂ with pure MAPbBr₃ and MAPbI₃ were elucidated as Type-I and Type-II respectively, using photoluminescence (PL) and time-resolved photoluminescence (TR-PL) measurements. Transit absorption (TA) spectroscopy investigations unambiguously revealed a rapid ET facilitated by CT in the WS₂/MAPbBr₃ heterostructure, with a time constant of ~20 ps, and a predominantly CT in the WS₂/MAPbI₃ heterostructure with a time constant of ~50 femtosecond (fs). The successful interfacing of low-dimensional perovskites with an extensive array of traditional 2D materials such as TMDCs opens up possibilities for novel optoelectronic properties and applications within the field of 2D material systems. Furthermore, the ultrafast and efficient ET and CT processes hold promise for the creation of advanced energy conversion devices.</p><p dir="ltr">In the last chapter, we successfully fabricated a ML-WS₂ in conjunction with a silver (Ag) nanoparticle (NP) array. Our findings affirmed a weak light-matter coupling between ML-WS₂ and the Ag NP array, as evidenced by angle-resolved photoluminescence spectroscopy. Furthermore, an enhancement in the bright exciton emission from ML-WS₂ was observed at reduced temperatures. The analysis of PL enhancement factor at varying temperatures suggested that an upper bound of the enhancement factor for the bright exciton could reach ~51 or even higher at 7 K, given the imperfect uniformity of the electric filed generated around the NPs. This discovery carries significant implications for the manipulation of excitons in TMDCs and expands their potential applications in the field of optoelectronics.</p>

Die vorliegende Arbeit ist eine umfassende Studie über das Wachstum mittels Molekularstrahlepitaxie (MBE) und die gemessenen Seebeck Koeffizienten und Lochtransport Eigenschaften von p‑Typ Oxiden, eine Materialklasse welche die optische Transparenz und die einstellbare Leitfähigkeit verbindet. Insbesondere, Nickeloxid (NiO) und Zinnmonoxid (SnO) wurden mittels plasmaunterstützter MBE unter Einsatz von einer Metall‑Effusionszelle und einem Sauerstoffplasma gewachsen. Für das NiO Wachstum wurden vor allem die Wachstumsgrenzen bei hohen Temperaturen festgelegt, welche von der Substratstabilität im Falle von Magnesiumoxid und Galliumnitrid abhängen. Es wird die Möglichkeit der Qualitätsbewertung mittels Ramanspektroskopie für Natriumchlorid-Strukturen gezeigt. Untersuchung der NiO Dotierung durch Oberflächen-Akzeptoren und der damit verbundenen Oberflächen‑Loch‑Anreicherungsschicht offenbart eine neue Dotierungsmöglichkeit für p‑leitende Oxide im Allgemeinen. Die metastabile Phase des SnO wird mittels PAMBE unter Verwendung bekannter Wachstumskinetik von Zinndioxid und verschiedener in‑situ Methoden stabilisiert, die anwendungsrelevante thermische Stabilität wird untersucht. Anschließende ex‑situ Charakterisierungen durch XRD und Ramanspektroskopie identifizieren das kleine Wachstumsfenster für das epitaktische Wachstum von SnO. Elektrische Messungen bestätigen die p‑Typ Ladungsträger mit vielversprechenden Löcherbeweglichkeiten welche auch für Hall Messungen zugänglich sind. Temperaturabhängige Hall Messungen zeigen einen bandähnlichen Transport welcher auf eine hohe Qualität der gewachsenen Schichten hindeutet. Die Funktionalität der gewachsenen Schichten wird durch verschiedene Anwendungen nachgewiesen. Zum Beispiel werden pn‑Heteroübergänge wurden durch das heteroepitaktische Wachstum der SnO Schichten auf einem Galliumoxid-Substrat erlangt. Die ersten bisher berichteten SnO-basierten pn‑Übergänge mit einem Idealitätsfaktor unter zwei wurden erreicht. / This thesis presents a comprehensive study on the growth by molecular beam epitaxy (MBE) and the measured Seebeck coefficients and hole transport properties of p‑type oxides, a material class which combines transparency and tunable conductivity. Specifically, Nickel oxide (NiO) and tin monoxide (SnO) were grown by plasma‑assisted MBE using a metal effusion cell and an oxygen plasma. For NiO growth, the focus lies on high temperature growth limits which were determined by the substrate stability of magnesium oxide and gallium nitride. Quality evaluation by Raman spectroscopy for rock‑salt crystal structures is demonstrated. Investigations of NiO doping by surface acceptors and the related surface hole accumulation layer reveal a new doping possibility for p‑type oxides in general. The meta‑stable SnO is stabilized by PAMBE utilizing known growth kinetics of tin dioxide and various in‑situ methods, its application-relevant thermal stability is investigated. Following ex‑situ characterizations by XRD and Raman spectroscopy identify secondary phases and a small growth window for the epitaxial growth of SnO. Electrical measurements confirm the p‑type carriers with promising hole mobilities accessible to Hall measurements. Temperature dependent Hall measurements show band‑like transport indicating a high quality of the grown layers. The functionality of the grown layers is proven by various applications. For example, pn‑heterojunctions were achieved by heteroepitaxial growth of the SnO layers on gallium oxide substrates. The first reported SnO based pn‑junction with an ideality factor below two is accomplished.

No description available.

Cette thèse présente une étude des propriétés électroniques de systèmes de basse dimension à base de métaux et de semiconducteurs. La première partie de l'étude traite le confinement de l'état de Shockley dans des nanostructures tridimensionnelles d'Ag(111), par des mesures STM/STS à très basse température (5 K). Nous avons d'abord analysé en détail la structure en énergie et la distribution spatiale des modes confinés. Nous avons ensuite mis à profit la nature discrète du spectre en énergie pour étudier le temps de vie des quasiparticules. Un comportement typique de liquide de Fermi est mis en évidence, et nous montrons que le mécanisme de diffusion dominant est associé au couplage électron-phonon. La contribution extrinsèque provenant du confinement partiel de l'onde électronique a également été obtenue. Une loi d'échelle est observée avec la taille des nanostructures, ce qui permet d'extraire un coefficient de réflexion plus important que dans de simples ilôts monoatomiques. La seconde partie de l'étude est consacrée aux couches ultra-minces semiconductrices obtenues par dépôts d'alcalins (K, Rb, Cs) sur la surface Si(111):B-[racine]3. Ce travail résout la controverse concernant la nature de l'état fondamental de ce système, et notamment l'origine de la reconstruction 2[racine]3 obtenue à la saturation du taux de couverture. La compréhension en amont de la structure cristallographique permet d'élucider les propriétés électroniques. Nous montrons qu'une approche à un électron, conduisant à un isolant de bandes, décrit le système de manière convaincante, malgré l'indication de forts effets polaroniques. Ce résultat est le fruit d'une étude approfondie combinant des techniques diverses et complémentaires (LEED, ARPES, XPS, STM/STS et calcul DFT) / This thesis is devoted to the electronic properties of low-dimensional systems based on metal and semiconducting materials. The first part deals with the Shockley state confinement in Ag(111) nanostructures, by means of very-low temperature (5 K) STM/STS measurements. We study the electronic structure and spatial distribution of the confined modes. Then the discrete nature of the electronic spectrum allows one to yield the quasiparticule lifetime. A Fermi-liquid behaviour is evidenced and we show that the dominant decay mechanism is attributed to the electron-phonon coupling. The extrinsic contribution arising from the partial confinement of the electronic wave is obtained as well. A scaling law with the nanostructure width is demonstrated, from which we deduce a higher reflection amplitude than in monoatomic islands. In the second part of the thesis, we study semiconducting ultra-thin films produced by alkali (K, Rb, Cs) deposition on the Si(111):B-[root of]3 surface. This work solves the controversy concerning the ground state of this system, and especially the nature of the 2[root of]3 surface recontruction obtained at saturation coverage. Prior understanding of the crystallographic structure allows to elucidate the electronic properties. We show that a one-electron picture, leading to a band insulator scenario, gives a good description of the system, in spite of strong polaronic effects. This conclusion results from an in-depth, combined study of complementary techniques (LEED, ARPES, XPS, STM/STS and DFT calculations).

Inexhaustible solar energy, which provides a clean, economic and green energy, seems to be an alternative solution, for current and future energy demands. Harvesting solar energy presents a challenge in using eco-friendly, earth abundant and inexpensive materials. Although present CdTe and Cu (In, Ga)Se2 (CIGS) technologies, provide light-to-electricity comparable to silicon technology, toxicity of Cd and scarcity of In limits the widespread utilization. Future tera-watt level module capacity would then be feasible by the low-cost technologies. The chalcogenide thin film technology would therefore provide the exceptional utilization in the large-area module monolithic integrations benefitting from the low material consumption owing to the direct band gap. The current thesis presents the results obtained from the quest of other thin film materials and their utilization to an unconventional Cd-free buffer layer. The films suitability for the future applications was assessed through photovoltaics device studies in a comparative manner. Chapter-1 deals with the motivation for the solar energy and the importance of thin film photovoltaics. Alternative materials which are abundantly available would help to reach the future tera watt level production, where the conventional silicon technology alone cannot satisfy the global energy demand. The utilization of non-conventional thin film based solar cells and their working principles were elucidated. The histories of the copper based alternative materials were introduced. Chapter-2 deals with the versatile thin film growth technique that has been designed fabricated and installed further which can handle the growth of the absorber and the top TCO layers with insitu sulphurisation. The methodology of the absorber deposition was discussed in detail. The experimental details for the co-sputtering of CuInAl alloy were presented. A novel selenization method, assisted by the combination of inert gases was developed for the annealing of CuInAl alloyed precursor films. Chapter-3 deals with the presentation of the results obtained on buffer and window layers. Chemical Bath deposition technique was employed for the growth and optimization of the conventional CdS and non-toxic buffer ZnS buffer layers. A) Cadmium sulphide thin films suitable for the utilization of high efficiency solar cells were optimized. Optimization of the buffer involved the effects of cadmium precursors, ammonia concentration and buffer capsule effect. A green route was presented so as to consume the precursors to the maximum extent possible. B) The alternative non-toxic buffer Zinc Sulphide (ZnS) thin films were successfully grown using the above optimized conditions. Moreover the window layer was also optimized for better device partner. Zinc Oxide was used as a n-type partner for the p-type CIS films. The ZnO films were grown by the RF-sputtering from the single cathode exhibited good crystallinity with Zincite structure (hexagonal ZnS, a= 3.249A0 and c= 5.205A0). All the grown films showed high resistivity. Al: ZnO thin films were optimized in two methods 1) by dc co-sputtering from the elemental cathodes, Zinc and Aluminum, 2) dc-sputtering from the single 2% Al-doped ZnO cathode. Low resistivity Al:ZnO thin films were deposited in both the cases. Effect of Aluminum doping into ZnO crystal lattice upon the optical and electrical properties were discussed. Chapter-4 deals with the synthesis of various absorber materials, characterizations and some properties. Briefly the A) Optimization of the CuIn1-xAlxSe2 phase with better adhesion and better crystallinity. Aluminum doping into the crystal lattice of CuInSe2 aided the wide band gap tuning of CIAS thin films. Morphological investigations were carried out for the different set of thin films before and after selenization. Effects of copper and Aluminum concentrations on the lattice parameter of the selenized thin films were addressed. The present chapter deals with the A) electrical properties of CIAS films and its heterojunction partners. Resistivity measurements and effects of Cu/In ratio and the effect of Al doping were described in detail. The CIAS/ZnO heterostructure, CIAS/Al:ZnO heterostructure junction properties as a function of different sun illuminations were discussed. B) The alternative earth abundant, eco-friendly, non-toxic elements Cu2ZnSnS4, absorber thin films synthesis and characterizations. Photo conductive photo measurements showed CZTS a potential candidate for near infra-red photodectection. C) Cu2CoSnS4 (CCTS) nanostructures and quantum dots were synthesized via simple chemical routes. CCTS quantum dots were tuned to exhibit the red edge effect and cold white phosphors. D) Cu3BiS3 nano rods were synthesized and characterized structurally and optically. The transport properties of Cu3BiS3 nanorods were tailored for showing the metallic to semiconducting transitions. Chapter-5 Discusses the A) Efforts made in understanding the CIAS based solar cells through interfaces such as CIAS/ZnO, Mo/CIAS, CIAS/CdS/i-ZnO/Al:ZnO and improving the open circuit voltage VOC upon a rotating substrate, involving the inline and in situ processes, for fabricating the cell/ module were discussed. The device statistics for various set of cells were analyzed. B) Solar cells of CTS absorber with the non-toxic buffer ZnS were fabricated and device properties were analyzed. C) CCTS quantum dots embedded in the polymer matrix were utilized for making the inverted hybrid solar devices in combination of ITO/AZnO bilayered contact replacing the acidic PEDOT: PSS. D) The solar cells made of CCTS hollow spheres by spin coating the absorber in the configuration SLG/Mo/CCTS/CdS/ iZno-AZnO/Ni-Al-Al showed a lower efficiency of 0.02%. Chapter-6 concludes with the summary of present investigations and the scope for future work.

Recently, there has been a growing interest in semiconductor and semiconducting oxide nanowires for applications in electronics, energy conversion, energy storage and optoelectronic devices such as field effect transistors, solar cells, Li- ion batteries, gas sensors, light emitting diodes, field emission displays etc. Semiconductor and semiconducting oxide nanowires have been synthesized widely by different vapor transport methods. However, conditions like high growth temperature, low vacuum, carrier gases for the growth of nanowires, limit the applicability of the processes for the growth of nanowires on a large scale for different applications. In this thesis work, studies have been made on the growth of semiconductor and semiconducting oxide nanowires at a relatively lower substrate temperature (< 500 °C), in a high vacuum (1× 10-5 mbar), without employing any carrier gas, by electron beam and resistive thermal evaporation processes. The morphology, microstructure, and composition of the nanowires have been investigated using analytical techniques such as SEM, EDX, XRD, XPS, and TEM. The optical properties of the films such as reflectance, transmittance in the UV-visible and near IR region were studied using a spectrophotometer. Germanium nanowires were grown at a relatively lower substrate temperature of 380-450 °C on Si substrates by electron beam evaporation (EBE) process using a Au-assisted Vapor-Liquid-Solid mechanism. High purity Ge was evaporated in a high vacuum of 1× 10-5 mbar, and gold catalyst coated substrates maintained at a temperature of 380-450 °C resulted in the growth of germanium nanowires via Au-catalyzed VLS growth. The influence of deposition parameters such as the growth temperature, Ge evaporation rate, growth duration, and gold catalyst layer thickness has been investigated. The structural, morphological and compositional studies have shown that the grown nanowires were single-crystalline in nature and free from impurities. The growth mechanism of Germanium nanowires by EBE has been discussed. Studies were also made on Silicon nanowire growth with Indium and Bismuth as catalysts by electron beam evaporation. For the first time, silicon nanowires were grown with alternative catalysts by the e-beam evaporation method. The use of alternative catalysts such as Indium and Bismuth results in the decrease of nanowire growth temperature compared to Au catalyzed Si nanowire growth. The doping of the silicon nanowires is possible with an alternative catalyst. The second part of the thesis concerns the growth of oxide semiconductors such as SnO2, Sn doped Indium oxide (ITO) nanowires by the electron beam evaporation method. For the first time, SnO2 nanowires were grown with a Au-assisted VLS mechanism by the electron beam evaporation method at a low substrate temperature of 450 °C. SEM, XRD, XPS, TEM, EDS studies on the grown nanowires showed that they were single crystalline in nature and free of impurities. The influence of deposition parameters such as the growth temperature, oxygen partial pressure, evaporation rate of Sn, and the growth duration has been investigated. Studies were also done on the application of SnO2 nanowire films for UV light detection. ITO nanowires were grown via a self-catalytic VLS growth mechanism by electron beam evaporation without the use of any catalyst at a low substrate temperature of 250-400 °C. The influence of deposition parameters such as the growth temperature, oxygen partial pressure, evaporation rate of ITO, and growth duration has been investigated. Preliminary studies have been done on the application of ITO nanowire films for transparent conducting coatings as well as for antireflection coatings. The final part of the work is on the Au-assisted and self catalytic growth of SnO2 and In2O3 nanowires on Si substrates by resistive thermal evaporation. For the first time, SnO2 nanowires were grown with a Au-assisted VLS mechanism by the resistive thermal evaporation method at a low substrate temperature of 450 °C. SEM, XRD, XPS, TEM, and EDS studies on the grown nanowires showed that they were single crystalline in nature and free of impurities. Studies were also made on the application of SnO2 nanowire films for methanol sensing. The self-catalytic growth of SnO2 and In2O3 nanowires were deposited in high vacuum (5×10-5 mbar) by thermal evaporation using a modified evaporation source and a substrate arrangement. With this arrangement, branched SnO2 and In2O3 nanowires were grown on a Si substrate. The influence of deposition parameters such as the applied current to the evaporation boat, and oxygen partial pressure has been investigated. The growth mechanism behind the formation of the branched nanowires as well as nanowires has been explained on the basis of a self-catalytic vapor-liquid-solid growth mechanism. The highlight of this thesis work is employing e-beam evaporation and resistive thermal evaporation methods for nanowire growth at low substrate temperatures of ~ 300-500 °C. The grown nanowires were tested for applications such as gas sensing, transparent conducting coatings, UV light detection and antireflection coating etc. The thesis is divided into nine chapters and each of its content is briefly described below. Chapter 1 In this chapter, a brief introduction is given on nanomaterials and their applications. This chapter also gives an overview of the different techniques and different growth mechanisms used for nanowires growth. A brief overview of the applications of semiconductors and semiconductor oxide nanowires synthesized is also presented. Chapter 2 Different experimental techniques employed for the growth of Si, Ge, SnO2, In2O3, ITO nanowires have been described in detail in this chapter. Further, the details of the different techniques employed for the characterization of the grown nanowires were also presented. Chapter 3 In this chapter, studies on the growth of Germanium nanowires by electron beam evaporation (EBE) are given. The influence of deposition parameters such as growth temperature, evaporation rate of germanium, growth duration, and catalyst layer thickness was investigated. The morphology, structure, and composition of the nanowires were investigated by XRD, SEM, and TEM. The VLS growth mechanism has been discussed for the formation of the germanium nanowires by EBE using Au as a catalyst. Chapter 4 This chapter discusses the growth of Si nanowires with Indium and Bismuth as an alternate to Au-catalyst by electron beam evaporation. The influence of deposition parameters such as growth temperature, Si evaporation rate, growth duration, and catalyst layer thickness has been investigated. The grown nanowires were characterized using XRD, SEM, TEM and HRTEM. The Silicon nanowires growth mechanism has been discussed. Chapter 5 This chapter discusses the Au-catalyzed VLS growth of SnO2 nanowires by the electron beam evaporation method as well as Antimony doped SnO2 nanowires by co-evaporation method at a low substrate temperature of 450 °C. The grown nanowires were characterized using XRD, SEM, TEM, STEM, Elemental mapping, HRTEM, and XPS. The effect of deposition parameters such as oxygen partial pressure, growth temperature, catalyst layer thickness, evaporation rate of Sn, and the growth duration of nanowires were investigated. The SnO2 nanowires growth mechanism has been explained. Preliminary studies were made on the possible use of pure SnO2 and doped SnO2 nanowire films for UV light detection. SnO2 nanowire growth on different substrates such as stainless steel foil (SS), carbon nanosheets films, and graphene oxide films were studied. SnO2 nanowire growth on different substrates, especially SS foil will be useful for Li-ion battery applications. Chapter 6 This chapter discusses the self catalyzed VLS growth of Sn doped Indium oxide (ITO) nanowires by the electron beam evaporation method at a low temperature of 250-400 °C. The grown nanowires were characterized using XRD, SEM, TEM, STEM, HRTEM, and XPS. The effect of deposition parameters such as oxygen partial pressure, growth temperature, evaporation rate of ITO, and the growth duration of the nanowires were investigated. Preliminary studies were also made on the possible use of self-catalyzed ITO nanowire films for transparent conducting oxides and antireflection coatings. ITO nanowire growth on different and large area substrates such as stainless steel foil (SS), and Glass was done successfully. ITO nanowire growth on different substrates, especially large area glass substrates will be useful for optoelectronic devices. Chapter 7 In this chapter, studies on the growth of SnO2 nanowires by a cost-effective resistive thermal evaporation method at a relatively lower substrate temperature of 450 °C are presented. The grown nanowires were characterized using XRD, SEM, TEM, HRTEM, and XPS. Preliminary studies were done on the possible use of SnO2 nanowire films for methanol sensing. Chapter 8 This chapter discusses the self-catalytic growth of SnO2 and In2O3 nanowires by resistive thermal evaporation. The nanowires of SnO2 and In2O3 were grown at low temperatures by resistive thermal evaporation using a modified source and substrate arrangement. In this arrangement, branched SnO2 nanowires, and In2O3 nanowires growth was observed. The grown nanowires were characterized using XRD, SEM, TEM, HRTEM, and XPS. The possible growth mechanism for branched nanowires growth has been explained. Chapter 9 The significant results obtained in the present thesis work have been summarized in this chapter.

Le transport de charges dans une série de copolymères à faible bande interdite basés sur l'alternance de motifs riches en électrons (thiophène, thiénothiophène) et d‘unités déficients en électrons (benzothiadiazole) et dans leurs mélanges avec un dérivé du fullerène (PCBM-C60) a été étudié. Les polymères sont différenciés par la structure moléculaire de leur coeur conjugué et par la nature, la position et la densité de leurs chaines latérales. Dans les polymères purs, la mobilité a été étudiée en fonction de la densité de charges par le biais de l’analyses de caractéristiques électriques de transistors à effet de champ et de dispositifs à un seul type de porteurs dont le courant est limité par la charge d’espace. En utilisant le modèle de transport de charges développé par Vissenberg et al., nous avons pu estimer le degré de désordre dans le film organique et corréler le transport de charge avec le degré d’ordre structural mesuré par la diffraction des Rayons-X. Ces polymères ont été conçus pour être utilisés dans la couche active des cellules solaires organiques. Grâce à l’étude du transport de charges dans les mélanges à différents ratios massiques polymères:fullerène, nous avons mis en évidence l’effet considérable de la structure moléculaire sur le ratio optimal polymère:fullerène. Aussi, nous avons pu montrer que la nature des chaînes latérales joue un rôle important dans l’obtention d’un chemin de percolation optimal à la conduction des électrons. / The charge transport in a series of low band-gap copolymers based on the alternation of electron-rich units (thiophene, thienothiophene) and electron-deficient units (benzothiadiazole) and in their blends with a fullerene derivative (PCBM-C60) is investigated. The polymers are differentiated by the molecular structure of the conjugated backbone and by the nature, position and density of alkyl side chains. In pristine polymer films, the hole mobility has been investigated as a function of charge carrier density by analyzing the electrical response of field-effect transistors and single carrier spacecharge- limited current devices. By using the charge transport model developed by Vissenberg et al., we could quantify the structural disorder for the different polymers and correlate their degree of anisotropy with structural data obtained by Grazing Incidence Wide Angle X-ray diffraction. These polymers have been used in the active layer of organic solar cells. The ambipolar chargetransport was investigated in the corresponding polymer:fullerene blends. The results show that the side chains play a major role on the polymer: fullerene interactions and controls the optimal weight ratio. Also, we have shown that the nature of the side chains has a strong impact in the optimal electron conducting pathways.

Diese Arbeit präsentiert eine umfassende in-situ Studie zur thermischen Ausdehnung von β-Ga2O3 im Temperaturbereich von Raumtemperatur (RT) bis 1200 K sowie zum Wachstum dünner Ga2O3 Schichten durch plasmaunterstützte Molekularstrahlepitaxie (MBE). Hierfür kamen synchrotron-basierte hochauflösende Röntgenbeugung (HRXRD) sowie die Beugung hochenergetischer Elektronen bei Reflexion (RHEED) zum Einsatz. Die dadurch erhaltenen Resultate gestatten detaillierte quantitative Aussagen zu den Ausdehnungskoeffizienten (CTE) von β-Ga2O3 und ein tieferes Verständnis des Wachstumsprozesses von Ga2O3 sowohl im Rahmen der Homo- als auch der Heteroepitaxie. / This thesis presents a comprehensive in-situ study on the thermal expansion of beta-Ga2O3 from room temperature (RT) to 1200 K, and the thin film growth of Ga2O3 as carried out by oxygen plasma assisted molecular beam epitaxy (MBE) using synchrotron-based high-resolution x-ray diffraction (HRXRD) and reflection high-energy electron diffraction (RHEED). The obtained results provide a quantitative analysis on the coefficients of thermal expansion (CTE) of beta-Ga2O3, and a deeper understanding in the growth process of Ga2O3 in both homoepitaxy and heteroepitaxy.