Cette thèse est une contribution à la modélisation et à l'étude expérimentale de cavités à cristaux photoniques à fente développées en vue d’un intégration hybride de matériaux actifs sur silicium. Parmi les travaux de conception, nous avons d'abord utilisé la méthodes des ondes planes et la méthode des différences finies (FDTD) pour concevoir une série de cavités SOI à hétérostructures, mécaniquement robustes, infiltrées par des liquides d’indices (n environ 1,5), présentant des longueurs d'onde de résonance dans la gamme des télécommunications (1,3 μm - 1,6 μm), des facteurs de qualité de plusieurs dizaines de milliers, et des volumes modaux proches de 0,03 (lambda/n)3. Nous avons ensuite étudié analytiquement et numériquement le couplage entre une cavité à cristaux photoniques à fente et un guide d'onde à fente par la théorie des modes couplés, complétée par des simulations FDTD, qui ont permis de confirmer la possibilité d'exciter efficacement les modes de fente des cavités à partir d'un guide externe. Enfin, nous avons étudié numériquement et semi-analytiquement des géométries de molécules photoniques constituées de deux cavités à cristaux photoniques à fentes couplées, dont l’écart fréquentiel entre les supermodes a pu être ajusté en amplitude et en signe. Nous avons utilisé une méthode perturbative (« Tight binding ») pour estimer les distributions spatiales des modes des molécules photoniques et prédire leurs fréquences dans plusieurs configurations de cavités à cristaux photoniques à fentes couplées.Ce travail exploratoire a été complété par une partie expérimentale qui a porté sur l'étude d'une famille de cavités de hétérostructure à cristaux photoniques à fente. Les cavités à cœur creux fabriquées ont montré des facteurs de qualité (Q) de plusieurs dizaines de milliers, associés à des volumes modaux de l’ordre de V=0,03 (λ/n)^3 après infiltration de la fente et des trous des structures par des liquides d'indice de réfraction proches de 1,46. Des facteurs Q/V supérieurs à 600 000 et atteignant 1 000 000 dans le meilleur des cas (vers lambda=1,3µm) ont ainsi été observés. Cette phase expérimentale préliminaire a donné ensuite lieu à deux types de développements.Tout d'abord, les propriétés des cavités à cristaux photoniques à fentes ont été étudiées pour des applications en détection d'indice en volume, et testées en utilisant différents liquides d'indice de réfraction compris entre 1,345 à 1,545. Les résonateurs étudiés ont présenté des sensibilités de ~ 235 nm / RIU et des facteur de mérite de détection d'indice de l’ordre de 3700, à l’état de l’art pour des résonateurs silicium intégrés à cœur creux.Dans une autre direction, le potentiel des résonateurs diélectriques à fente a été exploré en vue d’une intégration des matériaux actifs sur silicium. Un polymère dopé aux nanotubes de carbone semiconducteurs a été déposé comme matériau de couverture en vue d’étudier le renforcement de la photoluminescence (PL) des nano-émetteurs sous pompage optique vertical à lambda=740nm. Les expériences conduites ont permis de corréler le renforcement de la PL des nanotubes avec les modes de résonance des cavités et de démontrer le couplage partiel de cette PL vers des guides SOI longs de plusieurs millimètres (collection par la tranche vers lambda=1.3µm), apportant une preuve de principe d’une possible intégration des nanotubes émetteurs en photonique sur silicium. / This Ph.D. work is a contribution to the modeling and the experimental study of slot photonic crystal cavities for hybrid on-silicon integration. Among the design works, we first have used plane the wave expansion and finite-difference time-domain methods to design a series of mechanically robust (non-free membrane) SOI slot photonic crystal heterostructure cavities with resonance wavelengths in the telecommunication range, i.e. from 1.3 µm – 1.6 µm, with Q-factors of around several tens of thousands and mode volumes around 0.03(lambda/n)^3 after being infiltrated by cladding materials with typical index values around 1.5. We have then analytically and numerically studied the coupling between a slot photonic crystal cavity and a slot photonic crystal waveguide by using the coupled mode theory and FDTD simulation. Then we confirmed the ability to excite the cavity slot modes from a waveguide by using FDTD simulation. Finally, as a preliminary step towards the use of several coupled slotted cavities for future hybrid integration schemes, we have numerically and semi-analytically investigated photonic molecules made of two coupled slot photonic crystal cavities providing two different supermodes (bonding and antibonding ones) with controllable wavelength splitting. We successfully employed the tight-binding (TB) approach, which relies on the overlap of the two tightly confined cavity electric fields, to predict the supermodes frequencies and spatial distributions in several coupled slot photonic crystal cavity configurations.This exploratory work was supplemented by an experimental part, which focused on the investigation of a family of slot photonic crystal heterostructure cavities. The fabricated silicon on insulator hollow core cavities showed quality factors of several tens of thousands, i.e. from 18,000 to 31,000 and mode volume V of ~0.03(λ/n)3 after being infiltrated with liquids of ~1.46 refractive index, yielding Q/V ratio larger than 600,000, and reaching 1,000,000 in the best case (at λ ≈ 1.3 μm).This preliminary experimental stage gave rise to two types of additional developments.Firstly, the properties of the studied slot photonic crystal cavities have been investigated for index sensing applications by using different liquids with refractive index values ranging from 1.345 to 1.545. The considered photonic crystal resonators have demonstrated quality factors of several tens of thousands with sensitivities of ~235 nm/RIU and index sensing FOMs around 3,700, i.e. at the state of the art considering hollow core silicon integrated resonators.Secondly, in the view of the integration of active materials on silicon, the potential of these hollow core nanoresonators has been considered to enhance the photo-luminescence (PL) of semiconductor single-walled carbon nanotubes (SWNTs) integrated in thin films deposited on top of silicon. We have brought the first experimental demonstration of SWNTs PL collection (around lambda=1.28 µm) under vertical pumping at short wavelength (lambda=740 nm) from a slotted resonator into millimeter long integrated silicon waveguides, providing a first proof-of-concept step towards nanotube/Si-PhC integration as an active photonic platform. The reported works demonstrate the feasibility of integrating telecommunication wavelength nanotube emitters in silicon photonics as well as emphasize the role of slot photonic crystal cavities for on-chip hybrid integration.

[ES] Esta tesis aborda la caracterización de circuitos fotónicos integrados (PIC) usando interferometría óptica en el domino de las frecuencias (OFDI). OFDI tiene una implementación razonablemente simple e interroga al dispositivo bajo test (DUT) proporcionando su respuesta en el dominio del tiempo, en la que los distintos caminos ópticos seguidos por la luz se manifiestan en contribuciones que contienen información de posición, amplitud y fase. Junto con un "setup" OFDI construido en nuestros laboratorios y estructuras de test integradas que involucran anillos resonantes, interferómetros, etc., proponemos e implementamos técnicas para obtener parámetros ópticos cruciales tales como el índice de grupo, dispersión cromática, rotación de polarización y pérdidas de propagación en guías de onda. También para caracterizar acopladores ópticos. Se realizan evaluaciones directas de fase óptica en diferentes experimentos para, entre otras aplicaciones, caracterizar efectos de calor en chips. En la culminación de la tesis, se aborda la integración conjunta de los interferómetros de OFDI junto con el DUT, concibiéndolo como una estructura de caracterización integrada. El uso de guías de onda integradas proporciona una alta estabilidad y adaptación al DUT, además de un mecanismo inherente de compensación de la dispersión. Se realiza un análisis y prueba de concepto experimental caracterizando un "arrayed waveguide grating" en tecnología de nitruro de silicio. Seguidamente, se da un paso adelante proponiendo una arquitectura interferométrica de tres brazos novedosa que permite reducir la complejidad de la medida. Se lleva a cabo una validación experimental amplia usando distintos equipos de laboratorio, acoplamiento horizontal y vertical al chip, y diferentes DUTs en tecnologías de nitruro de silicio y "silicon-on-insulator". / [CAT] Aquesta tesi aborda la caracterització de circuits fotònics integrats (PIC) usant interferometria òptica al domini de les freqüències (OFDI). OFDI té una implementació raonablement simple i interroga el dispositiu sota test (DUT) proporcionant la seva resposta en el domini del temps, en què els diferents camins òptics seguits per la llum es manifesten en contribucions que contenen informació de posició, amplitud i fase. Juntament amb un "setup" OFDI construït als nostres laboratoris i estructures de test integrades que involucren anells ressonants, interferòmetres, etc., proposem i implementem tècniques per obtenir paràmetres òptics crucials com ara l'índex de grup, dispersió cromàtica, rotació de polarització i pèrdues de propagació en guies d'ona. També per caracteritzar acobladors òptics. Es fan avaluacions directes de fase òptica en diferents experiments per, entre altres aplicacions, caracteritzar efectes de calor en xips. A la culminació de la tesi, s'aborda la integració conjunta dels interferòmetres d'OFDI juntament amb el DUT, concebent-ho com una estructura de caracterització integrada. L'ús de guies d'ona integrades proporciona una alta estabilitat i adaptació al DUT, a més d'un mecanisme inherent de compensació de la dispersió. Es realitza una anàlisi i prova de concepte experimental caracteritzant un "arrayed waveguide grating" en tecnologia de nitrur de silici. Seguidament, es fa un pas avant proposant una arquitectura interferomètrica de tres braços nova que permet reduir la complexitat de la mesura. Es du a terme una validació experimental àmplia usant diferents equips de laboratori, acoblament horitzontal i vertical al xip, i diferents DUTs en tecnologies de nitrur de silici i "silicon-on-insulator". / [EN] This PhD thesis covers the characterization of complex photonic integrated circuits (PIC) by using Optical Frequency Domain Interferometry (OFDI). OFDI has a fairly simple implementation and interrogates the device under test (DUT) providing its time domain response, in which the different optical paths followed by light manifest in contributions with position, amplitude and phase information. Together with a working OFDI setup built in our laboratory and integrated test structures involving devices such as ring resonators, interferometers, etc., we propose and implement techniques to get crucial optical parameters such as waveguide group refractive index, chromatic dispersion, polarization rotation, and propagation loss. Also, to characterize optical couplers. Direct optical phase assessment is made in different experiments permitting, amongst others, the characterization of on-chip heat effects. In the culmination of the thesis, the co-integration of the OFDI interferometers with the DUT is addressed, conceiving it as an integrated characterization structure. The use of integrated waveguides provide high stability and adaptation to the DUT, as well as an inherent dispersion de-embedding mechanism. It is provided analysis and experimental proof of concept with an arrayed waveguide grating as DUT in a silicon nitride platform. A considerable leap forward is then taken by proposing a novel three-way interferometer architecture, reducing the measurement complexity. Wide experimental validation is carried out using different laboratory equipment, horizontal and vertical chip coupling, and different DUTs in silicon nitride and silicon-on-insulator. / Bru Orgiles, LA. (2022). Optical Frequency Domain Interferometry for the Characterization and Development of Complex and Tunable Photonic Integrated Circuits [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/181635 / TESIS

According to the 2018 Ethernet Roadmap projections, the requirements for high speed links keep increasing every year, always keeping an eye on the energy per bit consumption of the communication system. The Ethernet requirements are estimated to reach 1Tbps by 2022-2025. Optical links are one of the most concrete solutions to satisfy bandwidth requirements at low energy consumption. An optical link is a communication system that consists of a single end-to-end optical circuit. In contrast with vertical-cavity surface-emitting laser (VCSEL) technology, which is based on a direct laser modulation, silicon photonics technology (SPT) is based on indirect modulation. In order to perform the modulation, electro-optical modulators are needed in the optical link system for electrically modulating the optical power.This master thesis, developed at imec, will present the modeling of two different technologies of optical modulators: Silicon Ring Modulator and the Franz-Keldysh ElectroAbsorption Modulator. The work was initiated, since there were no available models of these devices in the actual framework for link analysis. First a preliminary study of the physical principles of the two devices was performed, in order to build the Matlab models. Then, these models were fitted with measurements, in order to adjust them to real-life behavior. After having obtained two working models of the two modulators, an alreadyexisting framework was used, to compare the energy consumption per bit in the optical link. However, the results obtained with the simulation didn’t highlight a technology to be preferred to the other. / Enligt prognoserna från Ethernet Roadmap 2018 fortsätter kraven på höghastighetslänkar att öka varje år och håller alltid ett öga på kommunikationssystemets energi konsumtion per bit. Ethernet-kraven beräknas nå 1Tbps 2022-2025.Optiska länkar är en av de mest konkreta lösningarna för att tillgodose bandbreddskrav vid låg energiförbrukning. En optisk länk är ett kommunikationssystem som utgör en punkt till punkt förbunden optisk krets. I motsats till teknik som utnyttjar den vertikala kavitetsytemitterande lasern (VCSEL), som bygger på en direkt lasermodulering, baseras kisel fotonikteknik (SPT) på indirekt modulering. För att utföra en modulering behövs elektrooptiska modulatorer i det optiska länksystemet för att elektriskt modulera den optiska effekten.Denna masteruppsats, utvecklad vid imec, kommer att presentera modelleringen av två olika teknologier av optiska modulatorer: Silicon Ring Modulatorn och Franz-Keldysh Electro Absorption Modulator. Arbetet, genomfördes eftersom det inte fanns några tillgängliga modeller av dessa enheter i själva ramverket för länkanalys. För det första genomfördes en preliminär studie av de två enheternas fysikaliska principer för att bygga Matlab-modellerna. Sedan jämfördes dessa modeller med mätningar för att anpassa dem till verkligt beteende. Efter att ha fått två arbetsmodeller av de två modulatorerna användes ett redan existerande ramverk för att jämföra energikonsumtionen per bit i den optiska länken. De resultat som erhölls med simuleringen indikerade emellertid inte någon teknik som skulle föredras framför den andra.

No description available.

<p>A new electron cyclotron plasma enhanced chemical vapour deposition (ECR-PECVD) reactor has been installed and tested at McMaster University. The focus of this project was the installation of the reactor and the growth of silicon oxide, silicon oxynitride, cerium doped silicon oxynitride and aluminium doped silicon oxide films to test the capabilities of the reactor. Silicon oxide films were prepared with near-stoichiometric compositions and silicon rich compositions. Good repeatability of the growths was seen. An increase in deposition temperature showed stable refractive index and a decrease in the growth rates. Silicon oxynitride films of varying compositions were prepared, and showed a non-uniformity of ~1% and growth rates of ~3.5 nm/min. Films prepared with a low oxygen flow were seen to be nitrogen rich. Although the depositions using Ce(TMHD)4 showed significant cerium incorporation, there was also high carbon contamination. One likely cause of this is the high sublimator temperature used during depositions or a thermal shock to the precursor during initial system calibration. A definitive cause of the carbon contamination has not been established. The cerium films showed strong blue luminescence after post-deposition annealing in N2 above 900° C. A drop in the luminescence was observed at 1100° C and a return of the luminescence at 1200° C. Generally, high cerium incorporation was associated with higher total luminescence. Al(THMD)3 was evaluated as an aluminium precursor for Al-doped silicon oxide films. The films showed aluminium content up to 6% demonstrating the viability of using Al(THMD)3 as a Al doping precursor.</p> / Master of Applied Science (MASc)

A compact device model along with simulations and an experimental analysis of a forward-biasedPNjunction-based silicon Mach-Zehndermodulator (MZM) with a phase-shifter length of 0.5 mm is presented. By placing the PN junction to a certain off-center such that72%of thewaveguide is p-doped, the refractive index swing at a given drive voltage swing is increased by 2% compared to the symmetric layout. The effects of the phase shifters’ length mismatch and asymmetric splitting on the modulation efficiency and extinction ratio of the modulator are simulated and compared with experimental results.Without any pre-emphasis or post-processing, a high-speed operation up to 15 Gb/s using a nonreturn-to-zero modulation format is demonstrated. A modulation efficiency (V πL) as low as 0.07 V × cm is verified and power consumption of 0.88 mW/Gb/s is recorded while a high extinction ratio of 33 dB is experimentally demonstrated. Compared to previously reported forward-biased silicon integrated modulators, without active tuning of the power splitting ratio between the arms, the extinction ratio is 10 dB higher. This MZM along with its compact structure is also sufficiently energy-efficient due to its low power consumption. Thus, it can be suitable for applications like analog signal processing and high-order amplitude modulation transmissions.

Cette thèse est consacrée à l’étude des propriétés optiques et optoélectroniques autour de la bande interdite directe des structures à puits quantiques Ge/SiGe pour la modulation, la photodétection et l’émission de lumière sur la plateforme silicium. Les principaux composants réalisés sont : un modulateur optique en guide d’onde, rapide et à faible puissance électrique, basé sur l’Effet Stark Confiné Quantiquement, les premières photodiodes Ge/SiGe dont le comportement fréquentiel est compatible avec les transmissions de données à 40 Gbit/s, et la première diode à électroluminescence à puits quantiques Ge/SiGe, base sur la transition directe de ces structures et fonctionnant à température ambiante. Les caractérisations statiques et fréquentielles ont été réalisées sur l’ensemble des composants, qui ont tous été fabriqués avec la même structure épitaxiée et les mêmes procédés de fabrication. Des modèles théoriques simples ont ensuite été utilisés pour décrire analyser les comportements observés. Finalement les études menées permettent de conclure que les structures à puits quantiques Ge/SiGe sont un candidat de choix pour la réalisation d’une nouvelle plateforme photonique à haut débit, totalement compatible avec les technologies silicium. / This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform. It reports the first development of high speed, low energy Ge/SiGe electro-absorption modulator in a waveguide configuration based on the quantum-confined Stark effect (QCSE), demonstrates the first Ge/SiGe photodiode with high speed performance compatible with 40 Gb/s data transmission, and realizes the first Ge/SiGe light emitting diode based on Ge direct gap transition at room temperature. Extensive DC and RF measurements were performed on each tested prototype, which was realized using the same epitaxial growth and fabrication process. Simple theoretical models were employed to describe experimental properties of the Ge/SiGe MQWs. The studies show that Ge/SiGe MQWs could potentially be employed as a new photonics platform for the development of a high speed optical link fully compatible with silicon technology.

Indirekte Halbleiter, wie beispielsweise Silizium, zählen bei technischen Anwendungen zu den wichtigsten halbleitenden Materialien. Die indirekte Bandstruktur führt jedoch dazu, dass diese Materialien schlechte Lichtemitter sind. Die theoretische Beschreibung der optischen Eigenschaften dieser Materialien wurde in früheren Betrachtungen über phänomenologische Ansätze verfolgt. In dieser Arbeit wird eine mikroskopische Theorie, basierend auf den Heisenberg-Bewegungsgleichungen, entwickelt, um die Prozesse im Bereich der indirekten Energielücke zu beschreiben. Nach Herleitung der relevanten Gleichungen wird im ersten Anwendungskapitel die Absorption und optische Verstärkung im thermischen Gleichgewicht diskutiert. Bei der Diskussion wird insbesondere auf den Unterschied zu direkten Halbleitern eingegangen. Es zeigt sich, dass sich die optische Verstärkung in indirekten Halbleitern fundamental von denen in direkten unterscheidet. Im Gegensatz zum direkten Halbleiter kann die maximale optische Verstärkung eines indirekten Übergangs die maximale Absorption um Größenordnungen übertreffen. Im zweiten Anwendungsteil werden Nichtgleichgewichtsphänomene diskutiert. Durch starke optische Anregung kann eine hohe Elektronenkonzentration am Gamma-Punkt erzeugt werden. Da das globale Bandstrukturminimum aber am Rand der Brillouinzone liegt, verweilen die Elektronen nicht lange dort, sondern streuen in das Leitungsbandminimum. Dieser Prozess der sogenannten Intervalley-Streuung wird im Hinblick auf Gedächtniseffekte diskutiert. Nach dem Streuprozess der Elektronen besitzt das System eine Überschussenergie, die sich in einem Aufheizen der Ladungsträger zeigt. Das zweite Nichtgleichgewichtsphänomen ist das Abkühlen des Lochsystems, welches aufgrund der Trennung der Elektronen und Löcher in indirekten Halbleiter auch im Experiment getrennt untersucht werden kann. Mithilfe eines Experiment-Theorie-Vergleichs wird ein schneller Elektron-Loch-Streuprozess nachgewiesen, der dazu führt, dass in indirekten Halbleitern das Thermalisieren und Equilibrieren der Elektronen und Löcher auf der gleichen Zeitskala stattfindet.

Indirekte Halbleiter, wie beispielsweise Silizium, zählen bei technischen Anwendungen zu den wichtigsten halbleitenden Materialien. Die indirekte Bandstruktur führt jedoch dazu, dass diese Materialien schlechte Lichtemitter sind. Die theoretische Beschreibung der optischen Eigenschaften dieser Materialien wurde in früheren Betrachtungen über phänomenologische Ansätze verfolgt. In dieser Arbeit wird eine mikroskopische Theorie, basierend auf den Heisenberg-Bewegungsgleichungen, entwickelt, um die Prozesse im Bereich der indirekten Energielücke zu beschreiben. Nach Herleitung der relevanten Gleichungen wird im ersten Anwendungskapitel die Absorption und optische Verstärkung im thermischen Gleichgewicht diskutiert. Bei der Diskussion wird insbesondere auf den Unterschied zu direkten Halbleitern eingegangen. Es zeigt sich, dass sich die optische Verstärkung in indirekten Halbleitern fundamental von denen in direkten unterscheidet. Im Gegensatz zum direkten Halbleiter kann die maximale optische Verstärkung eines indirekten Übergangs die maximale Absorption um Größenordnungen übertreffen. Im zweiten Anwendungsteil werden Nichtgleichgewichtsphänomene diskutiert. Durch starke optische Anregung kann eine hohe Elektronenkonzentration am Gamma-Punkt erzeugt werden. Da das globale Bandstrukturminimum aber am Rand der Brillouinzone liegt, verweilen die Elektronen nicht lange dort, sondern streuen in das Leitungsbandminimum. Dieser Prozess der sogenannten Intervalley-Streuung wird im Hinblick auf Gedächtniseffekte diskutiert. Nach dem Streuprozess der Elektronen besitzt das System eine Überschussenergie, die sich in einem Aufheizen der Ladungsträger zeigt. Das zweite Nichtgleichgewichtsphänomen ist das Abkühlen des Lochsystems, welches aufgrund der Trennung der Elektronen und Löcher in indirekten Halbleiter auch im Experiment getrennt untersucht werden kann. Mithilfe eines Experiment-Theorie-Vergleichs wird ein schneller Elektron-Loch-Streuprozess nachgewiesen, der dazu führt, dass in indirekten Halbleitern das Thermalisieren und Equilibrieren der Elektronen und Löcher auf der gleichen Zeitskala stattfindet.

The widespread adoption of photonic circuits requires the economics of volume manufacturing offered by integration technology. A Complementary Metal-Oxide Semiconductor compatible silicon material platform is particularly attractive because it leverages the huge investment that has been made in silicon electronics and its high index contrast enables tight confinement of light which decreases component footprint and energy consumption. Nevertheless, there remain challenges to the development of photonic integrated circuits. Although the density of integration is advancing steady and the integration of the principal components – waveguides, optical sources and amplifiers, modulators, and photodetectors – have all been demonstrated, the integration density is low and the device library far from complete. The integration density is low primarily because of the difficulty of confining light in structures small compared to the wavelength which measured in micrometers. The device library is incomplete because of the immaturity of hybridisation on silicon of other materials required by active devices such as III-V semiconductor alloys and ferroelectric oxides and the difficulty of controlling the coupling of light between disparate material platforms. Metamaterials are nanocomposite materials which have optical properties not readily found in Nature that are defined as much by their geometry as their constituent materials. This offers the prospect of the engineering of materials to achieve integrated components with enhanced functionality. Metamaterials are a class of photonic crystals includes subwavelength grating waveguides, which have already provided breakthroughs in component performance yet require a simpler fabrication process compatible with current minimum feature size limitations. The research reported in this PhD thesis advances our understanding of the structure-property relations of key planar light circuit components and the metamaterial engineering of these properties. The analysis and simulation of components featuring structures that are only just subwavelength is complicated and consumes large computer resources especially when a three dimensional analysis of components structured over a scale larger than the wavelength is desired. This obstructs the iterative design-simulate cycle. An abstraction is required that summarises the properties of the metamaterial pertinent to the larger scale while neglecting the microscopic detail. That abstraction is known as homogenisation. It is possible to extend homogenisation from the long-wavelength limit up to the Bragg resonance (band edge). It is found that a metamaterial waveguide is accurately modeled as a continuous medium waveguide provided proper account is taken of the emergent properties of the homogenised metamaterial. A homogenised subwavelength grating waveguide structure behaves as a strongly anisotropic and spatially dispersive material with a c-axis normal to the layers of a one dimensional multi-layer structure (Kronig-Penney) or along the axis of uniformity for a two dimensional photonic crystal in three dimensional structure. Issues with boundary effects in the near Bragg resonance subwavelength are avoided either by ensuring the averaging is over an extensive path parallel to boundary or the sharp boundary is removed by graded structures. A procedure is described that enables the local homogenised index of a graded structure to be determined. These finding are confirmed by simulations and experiments on test circuits composed of Mach-Zehnder interferometers and individual components composed of regular nanostructured waveguide segments with different lengths and widths; and graded adiabatic waveguide tapers. The test chip included Lüneburg micro-lenses, which have application to Fourier optics on a chip. The measured loss of each lens is 0.72 dB. Photonic integrated circuits featuring a network of waveguides, modulators and couplers are important to applications in RF photonics, optical communications and quantum optics. Modal phase error is one of the significant limitations to the scaling of multimode interference coupler port dimension. Multimode interference couplers rely on the Talbot effect and offer the best in-class performance. Anisotropy helps reduce the Talbot length but temporal and spatial dispersion is necessary to control the modal phase error and wavelength dependence of the Talbot length. The Talbot effect in a Kronig-Penny metamaterial is analysed. It is shown that the metamaterial may be engineered to provide a close approximation to the parabolic dispersion relation required by the Talbot effect for perfect imaging. These findings are then applied to the multimode region and access waveguide tapers of a multi-slotted waveguide multimode interference coupler with slots either in the transverse direction or longitudinal direction. A novel polarisation beam splitter exploiting the anisotropy provided by a longitudinally slotted structure is demonstrated by simulation. The thesis describes the design, verification by simulation and layout of a photonic integrated circuit containing metamaterial waveguide test structures. The test and measurement of the fabricated chip and the analysis of the data is described in detail. The experimental results show good agreement with the theory, with the expected errors due to fabrication process limitations. From the Scanning Electron Microscope images and the measurements, it is clear that at the boundary of the minimum feature size limit, the error increases but still the devices can function.