The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency of oscillation greater than 800 GHz and have been used to realize an amplifier operating above 600 GHz . In comparison to silicon (Si) based devices, III-V HBTs have superior transport properties that enables a higher gain, higher speed, and noise performance, and much higher Johnson figure- of-merit . From this perspective, the InP HBT is one of the most promising candidates for high performance mixed signal electronic systems.

In recent years, there has been an explosion of advancements in artificial intelligence, especially in language models. These models have become essential in aiding and providing information for various tasks. This study explores five proprietary and open-source large language models (LLMs) and examines their reliability and accuracy in selecting parts and constructing connections of ten circuit design tasks from our benchmark. During our investigations, we assessed that the default textual outputs from these LLMs could lead to ambiguous responses that are either too general or open to multiple interpretations. To enhance clarity, we developed an artificial intelligence (AI)-based pipeline that translates responses from LLMs into netlists, eliminating the need for further training or fine-tuning. Our study aims to highlight the reliability and accuracy of the default responses, develop a solution that provides a more explicit netlist description, and compare default and netlist outputs.

Composants essentiels de tout ordinateur, les semi-conducteurs sont utilisés dans de nombreux secteurs. Les percées technologiques dans ce domaine imposent un rythme vertigineux aux industriels. Tous les deux ans environ, la capacité des puces est doublée et leur prix est divisé par deux. Le diamètre des plaquettes de silicium augmente et, regroupées en lots, les plaquettes sont plus lourdes à transporter. Les systèmes automatiques de transport (AMHS) se présentent comme une excellente alternative. Le prix très élevé des équipements de production fait que l’objectif est de saturer les capacités de production. Pour y parvenir, il est important que le système de transport et de stockage garantisse que les machines n’attendent pas des lots disponibles, et aussi que les lots n’attendent pas une machine disponible.Dans la littérature, la complexité du problème (jusqu’à 700 étapes de fabrication, flux réentrants, etc.) fait que les études de modélisation du transport se font avec de fortes hypothèses sur la production ou inversement. Pourtant, le transport est un service pour la production. Cette thèse propose une approche de modélisation permettant d'intégrer le plus fidèlement possible les contraintes de transport, production et stockage, afin d'améliorer les indicateurs clés de la production. Une analyse détaillée du système a permis de construire un modèle de simulation à événements discrets. Enfin, après une validation industrielle, l'étude complète du modèle a permis d'analyser les paramètres critiques de gestion du transport. Les résultats permettent une meilleure compréhension du système et mettent en exergue d'intéressantes perspectives de recherche. / Essential components of all computers, semiconductors are widely used in many sectors. Quick advances in these technologies force a challenging rhythm to manufacturers. Following the Moore’s Law, chip capacity doubles approximately every two years and prices are divided by two. Thus, the increase of the diameter of wafers to 300 mm makes them heavier to transport in lots. Automated Material Handling Systems (AMHS) are an excellent alternative to tackle this problem. Because of the high price of production equipment, the goal is to use production capacity as much as possible while avoiding to keep too much inventory. To reach this goal, it is important that the transportation and storage system ensures that machines do not wait for available lots, and also that lots do not wait for available machines. In the literature, due to the problem complexity (up to 700 steps, re-entrant flows, etc.), the modeling of transportation is made with strong assumptions on the production or vice-versa. However, transport is a service for production. This thesis aims at providing a modeling approach that allows the integration in details transport, production and storage constraints, in order to improve production key indicators. A detailed understanding of the system allows us to build of a discrete event simulation model which is, in our point of view, the best compromise between the necessary level of details and computational times. Finally, through industrial validations, the complete study of the model allows critical parameters of transport management to be analyzed. The results help to get a better understanding of the system and open interesting research perspectives.

Research in future generation computing is focused on reducing energy dissipation while maintaining the switching speed in a binary operation to continue the current trend of increasing transistor-density according to Moore’s law. Unlike charge-based CMOS technology, spin-based nanomagnetic technology, based on switching bistable magnetization of single domain shape-anisotropic nanomagnets, has the potential to achieve ultralow energy dissipation due to the fact that no charge motion is directly involved in switching. However, switching of magnetization has not been any less dissipative than switching transistors because most magnet switching schemes involve generating a current to produce a magnetic field, or spin transfer torque or domain wall motion to switch magnetization. Current-induced switching invariably dissipates an exorbitant amount of energy in the switching circuit that nullifies any energy advantage that a magnet may have over a transistor. Magnetoelastic switching (switching the magnetization of a magnetostrictive magnet with voltage generated stress) is an unusual switching paradigm where the dissipation turns out to be merely few hundred kT per switching event – several orders of magnitude less than that encountered in current-based switching. A fundamental obstacle, though, is to deterministically switch the magnetization of a nanomagnet between two stable states that are mutually anti-parallel with stress alone. In this work, I have investigated ways to mitigate this problem. One popular approach to flip the magnetizations of a nanomagnet is to pass a spin polarized current through it that transfers spin angular moment from the current to the electrons in the magnet, thereby switching their spins and ultimately the magnet’s magnetization. This approach – known as spin transfer torque (STT) – is very dissipative because of the enormous current densities needed to switch magnets, We, therefore, devised a mixed mode technique to switch magnetization with a combination of STT and stress to gain both energy efficiency from stress and deterministic 180o switching from STT. This approach reduces the total energy dissipation by roughly one order of magnitude. We then extended this idea to find a way to deterministically flip magnetization with stress alone. Sequentially applying stresses along two skewed axes, a complete 180o switching can be achieved. These results have been verified with stochastic Landau-Lifshitz-Gilbert simulation in the presence of thermal noise. The 180o switching makes it possible to develop a genre of magneto-elastic memory where bits are written entirely with voltage generated stress with no current flow. They are extremely energy-efficient. In addition to memory devices, a universal NAND logic device has been proposed which satisfies all the essential characteristics of a Boolean logic gate. It is non-volatile unlike transistor based logic gates in the sense that that gate can process binary inputs and store the output (result) in the magnetization states of magnets, thereby doubling as both logic and memory. Such dual role elements can spawn non-traditional non-von-Neumann architectures without the processor and memory partition that reduces energy efficiency and introduces additional errors. A bit comparator is also designed, which happens to be all straintronic, yet reconfigurable. Moreover, a straintronic spin neuron is designed for neural computing architecture that dissipates orders of magnitude less energy than its CMOS based counterparts. Finally, an experiment has been performed to demonstrate a complete 180o switching of magnetization in a shape anisotropic magnetostrictive Co nanomagnet using voltage generated stress. The device is synthesized with nano-fabrication techniques namely electron beam lithography, electron beam evaporation, and lift off. The experimental results vindicate our proposal of applying sequential stress along two skewed axes to reverse magnetization with stress and therefore, provide a firm footing to magneto-elastic memory technology.

Solar energy as the most abundant source of energy is clean, non-pollutant, and completely renewable, which provides energy security, independence, and reliability. Organic-inorganic hybrid perovskite solar cells (PSCs) revolutionized the photovoltaics field not only by showing high efficiency of above 22% in just a few years but also by providing cheap and facile fabrication methods. In this dissertation, fabrication of PSCs in both ambient air conditions and environmentally controlled N2-filled glove-box are studied. Several characterization methods such as SEM, XRD, EDS, Profilometry, four-point probe measurement, EQE, and current-voltage measurements were employed to examine the quality of thin films and the performance of the PSCs. A few issues with the use of equipment for the fabrication of thin films are addressed, and the solutions are provided. It is suggested to fabricate PSCs in ambient air conditions entirely, to reduce the production cost. So, in this part, the preparation of the solutions, the fabrication of thin films, and the storage of materials were performed in ambient air conditions regardless of their humidity sensitivity. Thus, for the first part, the fabrication of PSCs in ambient air conditions with relative humidity above ~36% with and without moisture sensitive material, i.e., Li-TFSI are provided. Perovskite materials including MAPbI3 and mixed cation MAyFA(1-y)PbIxBr(1-x) compositions are investigated. Many solution-process parameters such as the spin-coating speed for deposition of the hole transporting layer (HTL), preparation of the HTL solution, impact of air and light on the HTL conductivity, and the effect of repetitive measurement of PSCs are investigated. The results show that the higher spin speed of PbI2 is critical for high-quality PbI2 film formation. The author also found that exposure of samples to air and light are both crucial for fabrication of solar cells with larger current density and better fill factor. The aging characteristics of the PSCs in air and vacuum environments are also investigated. Each performance parameter of air-stored samples shows a drastic change compared with that of the vacuum-stored samples, and both moisture and oxygen in air are found to influence the PSCs performances. These results are essential towards the fabrication of low-cost, high-efficiency PSCs in ambient air conditions. In the second part, the research is focused on the fabrication of high-efficiency PSCs using the glove-box. Both single-step and two-step spin-coating methods with perovskite precursors such as MAyFA(1-y)PbIxBr(1-x) and Cesium-doped mixed cation perovskite with a final formula of Cs0.07MA0.1581FA0.7719Pb1I2.49Br0.51 were considered. The effect of several materials and process parameters on the performance of PSCs are investigated. A new solution which consists of titanium dioxide (TiO2), hydrochloric acid (HCl), and anhydrous ethanol is introduced and optimized for fabrication of quick, pinhole-free, and efficient hole-blocking layer using the spin-coating method. Highly reproducible PSCs with an average power conversion efficiency (PCE) of 15.4% are fabricated using this solution by spin-coating method compared to the conventional solution utilizing both spin-coating with an average PCE of 10.6% and spray pyrolysis with an average PCE of 13.78%. Moreover, a thin layer of silver is introduced as an interlayer between the HTL and the back contact. Interestingly, it improved the current density and, finally the PCEs of devices by improving the adhesion of the back electrode onto the organic HTL and increasing the light reflection in the PSC. Finally, a highly reproducible fabrication procedure for cesium-doped PSCs using the anti-solvent method with an average PCE of 16.5%, and a maximum PCE of ~17.5% is provided.

Electron Beam Induced Deposition (EBID) is a direct write fabrication process with applications in circuit edit and debug, mask repair, and rapid prototyping. However, it suffers from significant drawbacks, most notably low purity. Work over the last several years has demonstrated that deposition from bulk liquid precursors, rather than organometallic gaseous precursors, results in high purity deposits of low resistivity (LPEBID). In this work, it is shown that the deposits resulting from LP-EBID are only highly conductive when deposited at line doses below 25μC/cm. When the dose exceeds this value, the resulting structure is highly porous providing a poor conductive pathway. It is also shown that beam current has no significant effect on the resistivity of the deposits. Nanowires with resistivity significantly lower than the previous best result of 67μΩ•cm were achieved, with the lowest resistivity being only 6.6μΩ•cm, only a factor of 4 higher than that bulk copper of 1.7μΩ•cm.

Currently organic-inorganic hybrid perovskite solar cells (PSCs) is one kind of promising photovoltaic technology due to low production cost, easy fabrication method and high power conversion efficiency. Charge transport layers are found to be critical for device performance and stability. A traditional electron transport layer (ETL), such as TiO2 (Titanium dioxide), is not very efficient for charge extraction at the interface. Compared with TiO2, SnO2 (Tin (IV) Oxide) possesses several advantages such as higher mobility and better energy level alignment. In addition, PSCs with planar structure can be processed at lower temperature compared to PSCs with other structures. In this thesis, planar-structure perovskite solar cells with SnO2 as the electron transport layer are fabricated. The one-step spin-coating method is employed for the fabrication. Several issues are studied such as annealing the samples in ambient air or glovebox, different concentration of solution used for the samples, the impact of using filter for solutions on samples. Finally, a reproducible fabrication procedure for planer-structure perovskite solar cells with an average power conversion efficiency of 16.8%, and a maximum power conversion efficiency of 18.1% is provided.

This thesis presents a new modular structure of the axial flux Switched Reluctance Motor (SRM). The design consists of four stator disks with each adjacent disk rotated 30 degrees apart and four rotor disks connected to a common shaft. The proposed design aims to reduce the unwanted radial force, mitigate the torque ripple, and improve the efficiency. The modular structure distributes the radial force and torque strokes along the axial length of the motor, potentially damping the torque pulsation. In addition, the modular structure would deliver the rating power at a lower current level, reducing the overall ohmic loss. Moreover, if a fault occurs on a motor disk or its control unit, the motor would still operate through other disks, increasing the reliability of the system. To verify the effectiveness of the proposed design, the magneto-static and transient performance of the motor are compared with the conventional single layer structure using 3-D Finite-Element (FE) software tool to see that the proposed motor performs better with lower torque ripple and lower radial force than a conventional single layer structure.

The demand for higher frequency applications is largely driven by bandwidth. The evolution of circuits in the microwave and millimeter frequency ranges always demands higher performance and lower cost as the technology and specification requirements evolve. Thus the development of new processes addressing higher frequencies and bandwidth requirements is essential to the growth of any semiconductor company participating in these markets. There exist processes which can perform in the higher frequency design space from a technical perspective. However, a cost effective solution must complement the technical merits for deployment. Thus a new 0.15 um optical lithography pHEMT process was developed at TriQuint Semiconductor to address this market segment. A 40 GHz power amplifier has been designed to quantify and showcase the capabilities of this new process by leveraging the existing processing knowledge and the implementation of high frequency scalable models. The three stage power amplifier was designed using the TOM4 scalable depletion mode FET model. The TriQuint TQP15 Design Kit also implements microstrip transmission line models that can be used for evaluating the interconnect lines and matching networks. The process also features substrate vias and the thin film resistor and MIM capacitor models which utilize the capabilities of the BCB process flow. During the design stage we extensively used Agilent ADS program for circuit and EM simulation in order to optimize the final design. Special attention was paid to proper sizing of devices, developing matching circuits, optimizing transmission lines and power combining. The final design exhibits good performance in the 40 GHz range using the new TQP15 process. The measured results show a gain of greater than 13 dB under 3 volt drain voltage and a linear output power of greater than 28 dBm at 40 GHz. The 40 GHz power amplifier demonstrates that the new process has successfully leveraged an existing manufacturing infrastructure and has achieved repeatability, high volume manufacturing, and low cost in the millimeter frequency range.

Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge1-xSnx alloy quantum-dots (QDs) are explored for potential visible to near-IR optoelectronic applications. While bulk Ge is an indirect gap material, QD confinement allows enhanced direct transitions, and alloying with Sn improves transition oscillator strengths. Temperature dependent steady-state and time-resolved photoluminescence reveal relaxation pathways involving bright/dark excitons and surface states in Ge1-xSnx QDs, showing their great potential for future use.