Cette thèse concerne l’étude des procédés de fabrication des grilles HKMG des technologies FDSOI 14 et 28 nm sur les performances électriques des transistors MOS. Elle a porté spécifiquement sur l'aspect fiabilité et la maîtrise du travail de sortie effectif (WFeff), au travers de la diffusion des additifs comme le lanthane (La) et l’aluminium (Al). Ce travail combine des techniques de caractérisation électriques et physico-chimiques et leur développement. L'effet de l'incorporation de ces additifs sur la fiabilité et la durée de vie du dispositif a été étudié. Le lanthane dégrade les performances de claquage TDDB et de dérives suite aux tests aux tensions négatives. L’introduction d’aluminium améliore le claquage TDDB, mais dégrade les dérives aux tensions positives. Ces comportements ont été reliés à des mécanismes physiques. Par ailleurs, la diffusion de ces additifs dans l’empilement de grille a été étudiée pour différents matériaux high-k en fonction de la température et de la durée de recuit de diffusion. Les doses d’additifs ont pu être ainsi mesurées, comparées et corrélées au décalage de travail de sortie effectif de grille. On a également étudié, les influences des paramètres du procédé de dépôt de grille TiN sur leur microstructure et les propriétés électriques du dispositif, identifiant certaines conditions à même de réduire la taille de grain ou la dispersion d’orientation cristalline. Toutefois, les modulations obtenues sur le travail de sortie effectif de grille dépendent plus du ratio Ti/N, suggérant un changement du dipôle à l'interface SiO2 / high-k. Enfin, une technique éprouvée de mesure de spectroscopie à rayon X sous tension a pu être mise en place grâce des dispositifs spécifiques et une méthodologie adaptée. Elle permet de mesurer les positions relatives des bandes d’énergie à l'intérieur de l’empilement de grille. Cette technique a démontré que le décalage du travail de sortie effectif induits par des additifs (La or Al) ou par des variations d'épaisseur de grille métallique TiN provient de modifications du dipôle à l'interface SiO2/ high-k. / This Ph.D. thesis is focused on the impact of the 14 and 28 nm FDSOI technologies HKMG stack processes on the electrical performance of MOS transistors. It concerns specifically the reliability aspect and the engineering of effective workfunction (WFeff ), through diffusion of lanthanum (La) and aluminum (Al) additives. This work combines electrical and physicochemical characterization techniques, and their development. The impact of La and Al incorporation, in the MOS gate stack, on reliability and device lifetime has been studied. La addition has a significant negative impact on device lifetime related to both NBTI and TDDB degradations. Addition of Al has a significant negative impact on lifetime related to PBTI, but on the contrary improves the lifetime for TDDB degradation. These impacts on device lifetime have been well correlated to the material changes inside the gate oxides. Moreover, diffusion of these additives into the HKMG stack with annealing temperature and time has been studied on different high-k materials. The diffused dose has been compared with the resulting shift in effective workfunction (WFeff), evidencing clear correlation. In addition, impact of TiN metal gate RF-PVD parameters on its crystal size and orientation, and device electrical properties has been studied. XRD technique has been used to obtain the crystal size and orientation information. These properties are significantly modulated by TiN process, with a low grain size and a unique crystal orientation obtained in some conditions. However, the WFeff modulations are rather correlated to the Ti/N ratio change, suggesting a change in the dipole at SiO2/high-k interface. Lastly, using specific test structures and a new test methodology, a robust and accurate XPS under bias technique has been developed to determine the relative band energy positions inside the HKMG stack of MOS devices. Using this technique, we demonstrated that WFeff shift induced by La and Al or by variations in gate thickness originates due to modifications of the dipole at SiO2/high-k interface.

A tendência mundial de se buscar a sustentabilidade econômica tem causado uma crescente demanda por novas técnicas e novos materiais que gerem: aumento da produtividade, maior velocidade de operação, aumento da vida útil de ferramentas e matrizes, e que reduzam o custo ambiental atual. Nesta busca a modificação de superfícies metálicas é um campo promissor e o bombardeamento com íons de Xe+ tem sido utilizada para texturizar a superfície do substrato, seja para o aumento da aderência de revestimentos com grande dureza ou para melhorar a difusão de N. Neste estudo são relatados os resultados obtidos de ensaios de dureza, desgaste, DRX (fases e tensão residual) e microscopias MEV, AFM e MET, efetuadas em amostras de aço 100Cr6 (globulizada) modificadas superficialmente por meio de bombardeamento com íons de Xe+ e revestimento duplex. Para esse fim, foram preparadas amostras combinando: bombardeamento com íons de Xe+ com energia de 400 e 1000 eV; implantação de N por feixe de íons e plasma pulsado; e deposição do revestimento de TiN por sputtering com diferentes temperaturas em um sistema reativo com N2-IBSD. Uma análise desses resultados permitiu constatar que o bombardeamento de íons de Xe+ gera refinamento de grãos, texturização, e aumenta a densidade de defeitos na estrutura cristalina na superfície tratada em função da energia utilizada. O bombardeamento de Xe+ com energia de 1000 eV melhorou o aprisionamento de nitrogênio e a difusão a 380°C (via feixe de íons) o que levou a formação dos nitretos γ\'-Fe4N e ε-Fe2-3N. Enquanto que com energia de 400 eV levou a formação apenas do nitreto γ\'-Fe4N. As propriedades adquiridas na combinação dos pré-tratamentos de bombardeamento de Xe+ com energia de 400 eV, nitretação a plasma pulsado (520°C) e a deposição do filme de TiN (500°C/240 min) levaram ao melhor desempenho no ensaio de desgaste. / The global trend of seeking economic sustainability has caused a growing demand for new materials that generate: increased productivity, higher operating speed, increased service life of tools and dies, and to reduce the current environmental cost. In this search, the modification of metallic surfaces is a promising field and bombardment Xe+ ions has been used to texture the surface of the substrate, is to increase the tack coatings with high hardness or to improve the N diffusion. In this study are reported the results obtained from testing the hardness, wear, XRD (phase and residual stress) and microscopy SEM, AFM and TEM, made in 100Cr6 steel samples (globulized) surface modified by bombardment with Xe+ and duplex coating. To this end, samples were prepared by combining: bombardment Xe+ ions with energy of 400 and 1000 eV; N implantation by ion beam and pulsed plasma; and deposition of the TiN coating by sputtering at different temperatures in a N2 reaction system-IBSD. An analysis of these results helped to confirm that the bombardment of Xe+ ions produces grain refinement, texturing, and increases the defect density in the crystalline structure of the surface treated according to the energy used. Bombardment of Xe+ ions with energy 1000 eV improved nitrogen trapping and diffusion to 380°C (via ion beam) which led to the formation of γ\'-Fe4N and ε-Fe2-3N nitrides. Whereas with energy 400 eV led to the formation of only γ\'-nitride Fe4N. The properties acquired in the combination of the pre-treatments of Xe+ ions bombardment at 400 eV, pulsed plasma nitriding (520°C) and the deposition of TiN coating (500°C/240 min) leads to a superior performance in wear test.

Neste trabalho foi investigada a eletrooxidação de etanol sobre eletrodos nanoparticulados binários Pt-M1 (M1 = Sn ou Re) e ternários Pt-M1-M2 (M1 e M2 = Sn e Re) suportados em carbono. Estes materiais foram preparados pelo método da redução por álcool e foram caracterizados por difração de raios-X e microscopia eletrônica de varredura associada a EDX. Os eletrodos foram montados utilizando-se a técnica de camada ultrafina. Os resultados eletroquímicos mostraram que a adição dos diferentes metais à platina aumentou a atividade catalítica tanto dos eletrodos binários quanto dos ternários. Os testes realizados na célula unitária mostraram que a presença de Sn nos catalisadores binário e de Sn e Re nos catalisadores ternários aumentou significativamente o desempenho da célula quando comparada ao ânodo de Pt pura suportada em carbono, preparado pela metodologia da redução do álcool ou ao comercial da E-TEK. O catalisador Pt70Sn10Re20/C foi o que apresentou a melhor densidade de corrente assim como a melhor densidade de potência com um valor máximo alcançado de aproximadamente 40 mW cm-2 durante a operação da célula a combustível a 90 oC. / In this work was investigated the electrooxidation of ethanol on nanostructured binary Pt-M1 (M1 = Sn or Re) and ternary Pt-M1-M2 (M1 and M2 = Re and Sn) electrodes supported on carbon. These materials were prepared by the alcohol reduction method and were characterized by X-ray diffraction and scanning electron microscopy associated to EDX. The ultra-thin layer technology was used to assemble the electrode. The electrochemical results showed that the addition of different metals to platinum increased the catalytic activity of the binary and ternary electrodes. Tests conducted in unitary fuel cell showed that the presence of Sn in the binary catalysts and Sn and Re in the ternary catalysts increased significantly the performance of the cell when compared to pure Pt anode supported on carbon, prepared by the alcohol methodology or the commercial E-TEK. The catalyst Pt70Sn10Re20/C presented the best current density as well the better power density with a maximum value of ca. 40 mW cm-2 reached during the operation of the fuel cell at 90 oC.

Medidas eletroquímicas, incluindo voltametria cíclica com e sem rotação do eletrodo, cronoamperometria, deconvolução experimental, aplicação de procedimentos eletroquímicos de envelhecimento e programas de perturbação de potencial foram empregadas no estudo eletroquímico da interface estanho/solução de bicarbonato de sódio 0,5 mol L-1. Os estudos preliminares evidenciaram a natureza complexa dos processos que ocorrem no sistema e várias séries de ensaios foram propostos a partir desses resultados. Observou-se o deslocamento do principal pico catódico, devido à mudanças das configurações de energia do filme, que foram analisadas mediante a aplicação de procedimentos de envelhecimento potenciostático e potenciodinâmico. A ocorrência de reativação em condições de baixa velocidade de varredura e a razão entre as cargas anódica e catódica sempre superior à unidade foram atribuídas à dissolução. O emprego de eletrodo de disco rotativo permitiu acompanhar a presença de espécies solúveis de Sn(II) envolvidas nos primeiros estágios de formação de filme. Foi observado que há contribuição difusional no controle da cinética dos dois primeiros processos anódicos. A variação da corrente com a rotação deve-se à difusão de uma mesma espécie nos dois processos anódicos. A presença de óxidos formados em diferentes condições experimentais com características e propriedades elétricas diferentes, evidenciada nos ensaios preliminares, foi analisada sob uma abordagem modelística. A ocorrência de processos de nucleação na redução, sugerida pela presença de histerese de corrente e pela dependência da corrente do pico de redução com a velocidade de varredura, foi confirmada com o emprego de medidas cronoamperométricas. Programas de perturbação de potencial, com o objetivo de eletromodificar a superfície do estanho, foram aplicados. A influência das variáveis de interesse (velocidade da perturbação, tempo de duração, limites de potencial, catodização e número de catodizações) no aparecimento de mudanças no perfil padrão foi estudada. A cinética de desprendimento de oxigênio foi analisada mediante curvas de Tafel, para avaliar as mudanças das propriedades eletrocatalíticas das superfícies resultantes da aplicação dos programas de perturbação. / Electrochemical measurements including cyclic voltammetry with and without electrode rotation, chronoamperometry, experimental deconvolution, electrochemical ageing procedures, and perturbing potential programmes, were carried out in order to study the tin/0,5 mol L-1 sodium bicarbonate solution interface. Preliminary studies evidence the complex nature of the processes and enable the proposal of various series of experiments. The potential shift of the main cathodic current peak was assigned to changes in the energetic configuration of the species formed during the positive scan. That effect was studied by means of potenciostatic and potentiodynamic ageing procedures. Reactivation occurrence at low sweep rates and the anodic to cathodic charges ratio always higher than one, were attributed to dissolution. Rotating disc measurements evidence the presence of soluble species, probably Sn(II) species, involved in the first steps of film formation. It was observed that a diffusional contribution has to be taken into account into the global control that involves the first two anodic processes. The same current-rotation dependence observed suggests the diffusion of the same species for both the anodic processes. The films formed under different experimental conditions, which exhibit differences in nature and electric properties, were studied under a modelistic approach. Current hysteresis presence as well as the dependence of peak current with sweep rate observed at the preliminary studies, suggest cathodic nucleation processes. Nucleation was confirmed by means of chronoamperometric measurements. In order to electromodify tin surface, the electrode was subjected to perturbing potential programmes. The influence of experimental variables (as perturbation sweep rate, perturbation time, potential limits, cathodic polarization and number of cathodic polarization applied) on the cathodic profile was studied. Oxygen evolution reaction, in terms of Tafel plots, was used in order to evaluate changes in the electrocatalytic properties of the modified surfaces.

CVD (Chemical Vapour Deposition) is an advanced technique for depositing a coating on a substrate. CVD implies that a solid phase is deposited on a normally heated substrate surface using a reactive, gaseous mixture. The reaction gas mixture must be carefully chosen to prevent homogeneous nucleation in the gas phase. As the solid phase is formed, gaseous by-products are formed and they must be removed from the CVD system. The thermally activated CVD process requires a deposition system which can regulate the total pressure and mass flows of the separate gas components as well as maintain a sufficiently high temperature to initiate a chemical reaction on the substrate surface. In this thesis a new CVD system was constructed to meet these challenges. Initially it will be used to deposit hard, wear resistant coatings but by changing the gases, it is possible to explore other chemical systems. The CVD system functions well up to a deposition temperature of 1100 ºC as long as the CVD processes are thermally activated. Apart from manual operation, a LabView control interface was implemented that can automate process steps by reading recipe files as csv (comma-separated variables). In this way complex coating architectures can be deposited. The aim of this thesis is to give a detailed description of the hardware set-up and of the software developed for it. Provided in this work are also a few examples of W and WN (tungsten nitride) coatings, including a multi-layered structure to show the potential of complex structures. Since the system also contains a titanium precursor, a TiN (titanium nitride) coating is presented to conceptually show the flexibility of the equipment. / CVD är en avancerad teknik för att lägga en tunn film runt ett substrat. CVD innebär att en fast fas bildas på den normalt uppvärmda substratytan från en reaktiv gasblandning. Gasblandningen är väl vald att inte förorsaka homogen kärnbildning i gasfasen. När den fasta fasen bildas så bildas också gasformiga biprodukter som måste pumpas ut ur systemet. Den termiskt aktiverade CVD processen kräver ett system som kan styra total trycket och massflödet av de individuella gaskomponenterna samt hålla en tillräcklig temperatur för att initiera kemiska reaktioner på substratytan. I denna avhandling presenteras ett CVD-system byggt för att möta dessa utmaningar. Initialt kommer systemet att deponera hårda, slittåliga skikt men genom gasbyte byte av gas kan andra materialsystem utforskas. CVD-systemet kan deponera andra typer av filmer upp till en deponeringstemperatur på 1100°C så länge som CVD-processerna är termiskt aktiverade. Utöver manuell styrning har ett styrprogram i LabView implementerats för att medge automatisering av processtegen genom att läsa av receptfiler i csv-format. På det här sättet kan mer komplicerade skiktarkitekturer deponeras. Målet med detta arbete är att ge en detaljerad beskrivning av uppställningen samt mjukvaran som framställts. Ett antal exempel på W- (volfram) och WN-skikt (volframnitrid) presenteras tillsammans med en multiskiktslösning för att visa potentialen för komplicerade strukturer. Eftersom systemet även har tillgång till en titankälla presenteras ett TiN-skikt (titannitrid) för att konceptuellt demonstrera utrustningens flexibilitet.

O presente trabalho teve como objetivo principal avaliar o efeito dos recobrimentos TiN e TiAlN depositados por PVD a plasma na liga Ti-6Al-4V sob condições de fluência a 600 °C e corrosão em meios contendo cloreto a 25, 60 e 80 °C. O trabalho foi complementado com análises microestruturais e dos revestimentos superficiais utilizando-se as técnicas de difração de raios X, microscopias óptica, eletrônica de varredura e de transmissão, medidas de microdureza e oxidação isotérmica. Os resultados permitiram concluir que a liga Ti-6Al-4V constituída pela configuração de Widmanstätten apresentou dureza média de 343 HV para a condição como recebida. Após os tratamentos por PVD a plasma observou-se um recobrimento à base de TiN de espessura de 2,2 ?m e composição igual a Ti0,7N. O recobrimento a base de TiAlN/TiAlCrN apresentou espessura em torno de 6 ?m e composição igual a (Ti0,38Al0,62)N/(Ti0,31Al0,50Cr0,19)N. As medidas do potencial em circuito aberto e polarização mostraram que a liga Ti-6Al-4V apresentou comportamento ativo com transição ativo-passiva em solução HCl e comportamento passivo em solução NaCl a 25, 60 e 80 °C. As amostras recobertas por TiN e TiAlN/TiAlCrN apresentaram comportamento passivo nas duas soluções corrosivas e em todas as temperaturas estudadas. A amostra revestida por TiN depositado por PVD apresentou os menores valores de taxa secundária em fluência para tensões maiores que 222 MPa, contudo a amostra nitretada a plasma apresentou maiores valores de vida útil e níveis de ductilidade. A análise conjunta dos expoentes de tensão, energia de ativação e estrutura de discordâncias indicaram que o principal mecanismo de deformação por fluência foi controlado por escalagem de discordâncias. O cálculo do parâmetro de tolerância ao dano (W) contribuiu para indicar que os revestimentos TiN e TiAlN/TiAlCrN, apesar de protegerem a superfície da oxidação, diminuíram a capacidade de deformação plástica ao longo do estágio terciário e vida útil da liga Ti-6Al-4V, reduzindo a ductilidade. Finalmente, os tratamentos superficiais utilizados neste trabalho foram eficientes por seu efeito de proteção através da deposição de um elemento cerâmico mais estável na superfície e não por transformações causadas na microestrutura. / This study aimed to evaluate the effect of the plasma-assisted PVD TiN and TiAlN/TiAlCrN coatings in the Ti-6Al-4V alloy under creep conditions at 600 °C and under corrosion conditions in environments containing chloride at 25, 60 and 80 °C. The study was complemented by microstructural and surface coatings analysis using XRD, optical, scanning and transmission electron microscopy, microhardness and isothermal oxidation. The results showed that the Ti-6Al- 4V alloy with Widmanstätten morphology presented an average hardness of 343 HV for as received condition. After treatment by plasma PVD, it was observed a TiN based coating, with 2,2 ?m and composition of Ti0,7N. The TiAlN/TiAlCrN based coating presented 6 ?m of thickness and composition of (Ti0,38Al0,62)N/(Ti0,31Al0,50Cr0,19)N. Anodic polarization and open circuit potential showed that Ti-6Al-4V alloy had active behavior with active - passive transition in HCl solution and passive behavior in NaCl solution at 25, 60 and 80 °C. The TiN and TiAlN/TiAlCrN coated samples showed passive behavior in both corrosive solutions and at all studied temperatures. The TiN coated sample showed the lowest values of secondary creep rate for stresses greater than 222 MPa, however, the plasma nitrided sample showed higher levels of service life and ductility. The analysis of stress exponents, activation energy and dislocations structures indicated that the main mechanism of creep was controlled by climbing dislocations. The damage tolerance parameter (W) calculation contributed to indicate that TiN and TiAlN/TiAlCrN coatings, although protect the surface from oxidation, decreased plastic deformation ability throughout tertiary stage and service life of the Ti-6Al-4V alloy, decreasing ductility. Finally, the surface treatments, used in this study, were efficient for their protective effect by depositing a more stable ceramic compound on surface and not by transformations caused on microstructure.

Tam, Kin Lun. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2011. / Includes bibliographical references. / Abstracts in English and Chinese. / Chapter CHAPTER I: --- INTRODUCTION --- p.1 / Chapter ´Ø --- Evaluation of Previous Scholarship --- p.6 / Chapter ´Ø --- Methodology and Sources --- p.8 / Chapter ´Ø --- Selection of the Period of Study and Structure of the Research --- p.11 / Chapter ´Ø --- Town Planning in Hong Kong: A Brief History --- p.15 / Chapter ´Ø --- The Garden City Concept --- p.23 / Chapter ´Ø --- Practice of New Town Design in Britain --- p.28 / Chapter ´Ø --- British Influence in Hong Kong --- p.35 / Chapter ´Ø --- Summary --- p.40 / Chapter CHAPTER II: --- "GOVERNING COLONIAL HONG KONG, NEW TOWN DEVELOPMENT AND THE FOUNDATION OF TIN SHUI WAI BEFORE 1982" --- p.53 / Chapter ´Ø --- Political and Housing Pressure in the Immediate Postwar Era --- p.54 / Chapter ´Ø --- Steps towards a New Horizon: The Trend towards New Towns (1964-1972) --- p.59 / Chapter ´Ø --- Shift of Colonial Governance --- p.67 / Chapter ´Ø --- Beginning of Early Hong Kong's New Towns (1972-1982) --- p.72 / Chapter ´Ø --- Foundation of Tin Shui Wai --- p.80 / Chapter ´Ø --- Summary --- p.90 / Chapter CHAPTER III: --- "EARLY STAGE OF TIN SHUI WAI'S URBAN TRANSFORMATION, CIRCA 1979- 1997" --- p.115 / Chapter ´Ø --- Rise of the Tin Shui Wai Development Idea --- p.116 / Chapter ´Ø --- Fall of Mightycity's Heavenly Hopes --- p.120 / Chapter ´Ø --- The Defective 1982 Agreement --- p.130 / Chapter ´Ø --- Planning the Town: The 1983 Master Development Plan and Its Appraisal --- p.135 / Chapter ´Ø --- Implementation of the 1983 MDP and Tin Shui Wai Urban Development --- p.149 / Chapter ´Ø --- Summary --- p.161 / Chapter CHAPTER IV: --- "WATERSHED FOR THE GROWTH OF TIN SHUI WAI'S NEWTOWN, 1997-2009" --- p.180 / Chapter ´Ø --- Early Political Ambitions to Expand the Tin Shui Wai Development --- p.181 / Chapter ´Ø --- Planning the Tin Shui Wai Reserve Zone --- p.185 / Chapter ´Ø --- An Assessment of the 1995 Town Plan --- p.193 / Chapter ´Ø --- Second Phrase of the Tin Shui Wai Urban Development --- p.195 / Chapter ´Ø --- Criticisms of the New Town --- p.206 / Chapter ´Ø --- Summary --- p.214 / Chapter CHAPTER V: N --- EW TOWN GROWTH VERSUS METROPOLITAN PLANNING: CIRCUMSTANCES AFFECTING THE TIN SHUI WAI URBAN DEVELOPMENT --- p.232 / Chapter ´Ø --- Ways Towards a New Strategy --- p.233 / Chapter ´Ø --- Regional Decentralization to Metropolitan Concentration (c. 1980-1997) --- p.240 / Chapter ´Ø --- The Rose Garden Project --- p.246 / Chapter ´Ø --- Pursuit to be Asia's World City --- p.253 / Chapter ´Ø --- Hong Kong's City Planning and the TSW Controversies --- p.261 / Chapter ´Ø --- Summary --- p.267 / Chapter CHAPTER VI: --- CONCLUSION --- p.275 / Chapter ´Ø --- "A ""Secret"" of the Tin Shui Wai Project" --- p.275 / Chapter ´Ø --- Employment in Hong Kong's New Towns --- p.277 / Chapter ´Ø --- An Evaluation --- p.281 / Chapter ´Ø --- Further Studies --- p.287 / BIBLIOGRAPHY --- p.290

A aplicação de filmes finos em diferentes setores da indústria tem aumentado consideravelmente nos últimos anos. Dentre os diversos tipos de revestimentos, filmes finos cerâmicos tem se destacado por melhorarem as propriedades mecânicas, tribológicas e superficiais dos componentes industriais. Dentre os mais variados filmes finos cerâmicos, o Nitreto de Titânio (TiN) é um dos mais conhecidos e aplicados. Caracteriza-se principalmente por possuir alta dureza, resistência à corrosão, estabilidade química e resistência ao desgaste. Essas e outras características são extremamente sensíveis ao processo e, principalmente, aos parâmetros de deposição. Entender a influência da variação dos parâmetros de deposição em busca de melhorar as propriedades é um dos desafios da Ciência e Engenharia de Superfícies. O objetivo deste trabalho é obter, caracterizar e avaliar as propriedades mecânicas e adesivas de filmes finos de TiN obtidos via deposição física a vapor (PVD, Physical Vapour Deposition). Os filmes foram depositados em substratos de alumínio AA 1000, utilizando a técnica Triodo Magnetron Sputtering. Variou-se o fluxo de N2 durante a deposição e comparou-se com a condição de fluxo de N2 constante, sendo verificada a viabilidade de produção de filmes funcionalmente gradados. Os filmes obtidos foram caracterizados por Nanoindentação instrumentada, Difração de Raios-X por ângulo rasante, Teste de riscamento (scratch test), TEM (Transmission Electron Microscopy), Microscopia de Varredura de Alta Emission Gun) e Ensaio de tração em escala reduzida. Como resultado, os filmes depositados com fluxo de N2 variável possuíram melhor comportamento mecânico/adesivo e quando comparados com os filmes depositados sob fluxo de N2 constante. Portanto, a obtenção de filmes finos de TiN gradados funcionalmente com propriedades superiores aos filmes finos de TiN obtidos de modo convencional é possível, e sua aplicação em diferentes áreas da indústria tendem a ser melhor exploradas. / The application of thin films in different industry sectors has increased considerably in recent years. Among the various types of coatings, thin ceramic films have been distinguished by improving the mechanical, tribological and surface properties of industrial components. Among the ceramic thin films, titanium nitride (TiN) is one of the most known and applied. It is characterized by its high hardness, corrosion resistance, chemical stability and wear resistance. These characteristics are extremely sensitive to the deposition process.Understanding the influence of the variation of deposition parameters to improve properties is one of the challenges of Surface Science and Engineering. The films were deposited on AA 1000 aluminum substrates by Triode Magnetron Sputtering. N2 flow was varied during deposition and compared to the constant N2 flow condition and the viability of production of functionally graded films was tested. The obtained films were characterized by instrumented Nanoindentation, Grazing Incidence X-Ray Diffraction (GIXRD), scratch test, TEM (Transmission Electron Microscopy), Field Emission Gun (FEG) and Tensile Test on a reduced scale. As a result, films deposited with variable N2 flow had better mechanical / adhesive behavior when compared to films deposited under constant N2 flow. Therefore, obtaining thin films of functionally graded TiN with properties superior to the TiN thin films obtained in conventional manner is possible, and their application in different areas of industry tend to be better explored.

The Bethe-Weizsäcker cycle consists of a set of nuclear reactions that convert hydrogen into helium and release energy in the stars. It determines the luminosity of low-metal stars at their turn-off from the main-sequence in the Hertzsprung-Russel diagram, so its rate enters the calculation of the globular clusters’ age, an independent lower limit on the age of the universe. The cycle contributes less than 1% to our Sun’s luminosity, but it produces neutrinos that can in principle be measured on Earth in underground experiments and bring direct information of the physical conditions in the solar core, provided that the nuclear reaction rate is known with sufficient precision. The 14N(p,γ)15O reaction is the slowest reaction of the Bethe-Weizs¨acker cycle and establishes its rate. Its cross section is the sum of the contributions by capture to different excited levels and to the ground state in 15O. Recent experiments studied the region of the resonance at Ep = 278 keV. Only one modern data set from an experiment performed in 1987 is available for the high-energy domain. Both energy ranges are needed to constrain the fit of the excitation function in the R-matrix framework and to obtain a reliable extrapolated S-factor at the very low astrophysical energies. The present research work studied the 14N(p,γ)15O reaction in the LUNA (Laboratory for Underground Nuclear Astrophysics) underground facility at three proton energies 0.36, 0.38, 0.40MeV, and in Dresden in the energy range Ep = 0.6 - 2MeV. In both cases, an intense proton beam was sent on solid titanium nitride sputtered targets, and the prompt photons emitted from the reaction were detected with germanium detectors. At LUNA, a composite germanium detector was used. This enabled a measurement with dramatically reduced summing corrections with respect to previous studies. The cross sections for capture to the ground state and to the excited states at 5181, 6172, and 6792 keV in 15O have been determined. An R-matrix fit was performed for capture to the ground state, that resolved the literature discrepancy of a factor two on the extrapolated S-factor. New precise branching ratios for the decay of the Ep = 278 keV resonance were measured. In Dresden, the strength of the Ep = 1058 keV resonance was measured relative to the well-known resonance at Ep = 278 keV, after checking the angular distribution. Its uncertainty is now half of the error quoted in literature. The branching ratios were also measured, showing that their recommended values should be updated. Preliminary data for the two most intense transitions off resonance are provided. The presence in the targets of the other stable nitrogen isotope 15N with its well- known isotopic abundance, allowed to measure the strength of two resonances at Ep = 430 and 897 keV of the 15N(p,αγ)12 C reaction, improving the precision for hydrogen depth profiling.

Mit zunehmender Miniaturisierung mikroelektronischer Bauelemente steigen die Anforderungen an reproduzierbare qualitätskonforme Schichten. Um die zur Herstellung notwendigen ALD/PVD/CVD-Schichtabscheideanlagen in einen zuverlässigen Zustand zu versetzen, ist eine regelmäßige Kammerreinigung notwendig. Während des Abscheideprozesses werden nicht nur das Substrat, sondern auch die umliegenden Kammerteile beschichtet. Diese Schichten wachsen mit jedem Beschichtungszyklus weiter an. Der Stress zwischen Schicht und Kammerwand steigt beständig, und es besteht das Risiko das Teile abplatzen und auf die Waferoberfläche fallen und damit die Struktur unbrauchbar machen. Um das zu verhindern, muss die Kammerwand in einen regelmäßigen Zustand versetzt werden, in dem sichergestellt ist, daß keine Schichtreste abplatzen können. In der vorliegenden Arbeit wird ein neues Verfahren zur Trockenreinigung von ALD-Titannitrid Kammern vorgestellt. Dazu wurden TiN-Stücke (hergestellt im ALD, CVD, PVD-Verfahren) auf einem temperaturgeregelten Probenhalter platziert. Eine Argon/NF3 Gasmischung wurde in einer externen Plasmaquelle (RPS) zerlegt und in die Reaktionskammer geschleust. Die Ätzung wurde mit in-situ Reflexionsmessung beobachtet. Experimente mit Chlorzugabe wurden unternommen und ein starker Einfluss auf den Ätzmechanismus beobachtet. Die Ätzraten des TiN sind exponentiell abhängig von der Temperatur und proportional abhängig von der Verfügbarkeit atomaren Fluors. Dieses wird bei der Zerlegung von NF3 frei gesetzt und steht der Reaktion zur Verfügung. Die NF3-Zerlegung in Fluor und Stickstoff wurde mit Hilfe der Massenspektrometrie (QMS) untersucht, Zerlegungsgrade größer 96% wurden erreicht. Mit Hilfe dieser Messung kann der Einfluss der Kammerreinigung auf den Treibhausgasausstoß (GWP) bestimmt werden. Mit dem Ar/NF3-Verfahren können die GWP-Emissionen um 90% im Vergleich zur RIE-Ätzung mit SF6 reduziert werden. Mit Argon/Chlor-Plasmen konnte kein Titannitrid geätzt werden, da die physikalische Sputterkomponente fehlte. Durch Hinzufügen von Chlor zu einer Ar/NF3-Gasmischung konnte die Ätzrate um bis zu 270% im Bereich niedrige Temperaturen/niedriger Druck gesteigert werden. Bei höheren Temperaturen/höherem Druck fielen die Ar/NF3/Chlor Ätzraten allerdings deutlich hinter die des Ar/NF3 zurück. Die dazu führenden Effekte werden untersucht und ausgeführt. Die Nutzung von externen Plasmaquellen bietet eine vielversprechende Alternative um Abscheideanlagen von TiN-Rückständen reinigen zu können. Bei hohen Temperaturen werden deutlich höhere Ätzraten als bei anderen Schichten (SiN, SiO2, W) erreicht. Für Anwendungen im niedrigen Temperaturbereich erlaubt die Zugabe von Chlor interessante Anwendungsmöglichkeiten. / Demands on state of the art deposition technologies for semiconductor production focus on uniformity, repeatability and low defectivity. The chamber condition is a key parameter to achieve these high demands in chemical vapour deposition (CVD) processes and are even more critical to the atomic layer deposition processes (ALD). During the deposition process not only the wafer surface but other chamber parts as well are covered with a thin film. This film accumulates during the deposition cycles and is prone to fall off the walls and pollute the wafer surface. The chamber parts that are exposed to the deposition must be set back to a steady state so that no deposits fall off the walls. The chamber condition also changes uncontrolled with varying film condition on the wall. A new approach for cleaning of ALD-titanium nitride (TiN) deposition chambers was investigated. To determine etch rates TiN-samples (created by ALD, CVD and PVD) were placed on a temperature controlled sample holder. An argon/NF3 mixture was excited in an upstream remote plasma source (RPS) and then routed through the reaction chamber. No further plasma activation inside the reaction chamber was done. The etching was monitored by in-situ reflectometry and etch rates were calculated. The effect of chlorine addition was also studied and strong influence on etch rates was found. The etch rate of TiN is dependent exponentially on temperature and very low etch rates were achieved below 70◦C at a chamber pressure ranging from 20-300 Pa. It was found that this correlates very well with the vapour pressure of the reaction product TiF4. At temperatures of 300◦C etch rates up to 800 nm/min were achieved. The optimum pressure for etching was found at 100 Pa while the pressure effect was small. The etch rate was mainly dependent on the availability of activated fluorine to create TiF4 by the reaction 2 NF3 → N2 + 6 F* 2 TiN + 8 F* → 2 TiF4 + N2 The NF3 decomposition to nitrogen and fluorine was monitored by quadrupole mass spectrometry (QMS) and was found to be greater than 96%. This figure allows an estimation of the amount of Global warm potential (GWP) gas emmited by the process for environmental considerations. Using argon/NF3 or argon/fluorine mixtures in RPS devices reduces the GWP emissions by more than 90% compared to RIE plasma cleaning with SF6. No etching occurred by using argon/chlorine only mixtures as no physical etch component was involved in RPS etch. However adding chlorine to the argon/NF3 mixture accelerated the etching process. Chlorine addition to the argon/NF3 mixture increased the etch rates up to 270% in the low pressure/low temperature regime. At higher temperatures or higher pressures the etch rates dropped below the etch rates achieved solely with fluorine chemistry. It must be emphasized that there is no physical acceleration of the ionized molecules toward the etched sample in this remote plasma setup. The usage of a remote plasma offers an alternative way to remove residues from chambers running TiN deposition processes. At high temperatures the Ar/NF3 offers remarkably high etching rates for TiN compared to other films (silicon nitride, -oxide, tungsten) usually cleaned by remote plasma. For low temperature applications the chlorine enhancement offers an interesting alternative to accelerate the etch process.