Inspired by graphene, I investigate the properties of several different real and artificial Dirac materials. Firstly, I consider a two-dimensional honeycomb lattice of metallic nanoparticles, each supporting localised surface plasmons, and study the quantum properties of the collective plasmons resulting from the near field dipolar interaction between the nanoparticles. I analytically investigate the dispersion, the effective Hamiltonian and the eigenstates of the collective plasmons for an arbitrary orientation of the individual dipole moments. When the polarisation points close to normal to the plane the spectrum presents Dirac cones, similar to those present in the electronic band structure of graphene. I derive the effective Dirac Hamiltonian for the collective plasmons and show that the corresponding spinor eigenstates represent chiral Dirac-like massless bosonic excitations that present similar effects to those of electrons in graphene, such as a non-trivial Berry phase and the absence of backscattering from smooth inhomogeneities. I further discuss how one can manipulate the Dirac points in the Brillouin zone and open a gap in the collective plasmon dispersion by modifying the polarisation of the localized surface plasmons, paving the way for a fully tunable plasmonic analogue of graphene. I present a phase diagram of gapless and gapped phases in the collective plasmon dispersion depending on the dipole orientation. When the inversion symmetry of the honeycomb structure is broken, the collective plasmons become gapped chiral Dirac modes with an energy-dependent Berry phase. I show that this concept can be generalised to describe many real and artificial graphene-like systems, labeling them Dirac materials with a linear gapped spectrum. I also show that biased bilayer graphene is another Dirac material with an energy dependent Berry phase, but with a parabolic gapped spectrum. I analyse the relativistic phenomenon of Klein Tunneling in both types of system. The Klein paradox is one of the most counter-intuitive results from quantum electrodynamics but it has been seen experimentally to occur in both monolayer and bilayer graphene, due to the chiral nature of the Dirac quasiparticles in these materials. The non-trivial Berry phase of pi in monolayer graphene leads to remarkable effects in transmission through potential barriers, whereas there is always zero transmission at normal incidence in unbiased bilayer graphene in the npn regime. These, and many other 2D materials have attracted attention due to their possible usefulness for the next generation of nano-electronic devices, but some of their Klein tunneling results may be a hindrance to this application. I will highlight how breaking the inversion symmetry of the system allows for results that are not possible in these system's inversion symmetrical counterparts.

Die untersuchten Ferekristalle sind neuartige Verwachsungs-Schichtverbindungen aus m Monolagen von Niobdiselenid (NbSe2), die wiederholt mit n atomaren Bilagen von Bleiselenid (PbSe) oder Zinnselenid (SnSe) geschichtet sind. Niobdiselenid als Volumenmaterial besitzt eine Schichtstruktur und ist ein Supraleiter. Aufgrund ihrer gezielt einstellbaren atomar geschichteten Struktur können Ferekristalle als Modellsysteme für geschichtete Supraleiter dienen. In dieser Arbeit werden ihre strukturellen und elektrischen Eigenschaften untersucht. Mittels Transmissionselektronenmikroskopie wird ihre turbostratisch ungeordnete, nanokristalline Struktur nachgewiesen. Die atomare Struktur innerhalb der einzelnen Schichten ist ähnlich wie in den Volumenmaterialien NbSe2, PbSe und SnSe, wobei die kristallographischen c-Achsen parallel zur Stapelrichtung der Ferekristalle zeigen. Eine quantitative Analyse unter Verwendung eines Zwei-Schicht-Modells für den spezifischen Widerstand, Hall-Koeffizienten und Magnetwiderstand liefert ähnliche Ladungsträgersorten, -dichten und –beweglichkeiten in den NbSe2-Schichten, wie sie für isolierte Einzellagen von NbSe2 berichtet wurden. Diese unterscheiden sich von denen des Volumenmaterials NbSe2. Erstmals wurde ein Übergang der Ferekristalle in den supraleitenden Zustand nachgewiesen. Die Sprungtemperaturen sind dabei in etwa auf die Hälfte der Sprungtemperaturen der jeweiligen nicht turbostratisch ungeordneten Misfit-Schichtverbindungen reduziert. Diese Reduzierung kann der turbostratischen Unordnung der Ferekristalle zugeordnet werden. Das Verhältnis zwischen der schichtsenkrechten Ginzburg-Landau-Kohärenzlänge und dem Abstand zwischen den supraleitenden Schichten ist bei den Ferekristallen kleiner als bei den nicht ungeordneten Misfit-Schichtverbindungen, was Ferekristalle zu vielversprechenden Kandidaten für (quasi-)zweidimensionale Supraleiter macht. / The investigated ferecrystals are novel layered intergrowth compounds consisting of m monolayers of niobium diselenide (NbSe2) stacked repeatedly with n atomic bilayers of lead selenide (PbSe) or tin selenide (SnSe). Bulk NbSe2 is a layered compound showing superconductivity. Due to their artificially atomic-scale layered structure, which is tunable on the atomic scale, ferecrystals can serve as model systems for layered superconductors. In this study, their structural and electrical properties are investigated. Using transmission electron microscopy their turbostratically disordered, nanocrystalline structure is revealed. The atomic structure within the individual layers is similar as for bulk NbSe2, PbSe and SnSe, with the crystallographic c-axes parallel to the stacking direction in the ferecrystals. A quantitative analysis using a two-layer model fit for the electrical resistivity, Hall coefficient and magnetoresistance yields a similar carrier type, density and mobility in the NbSe2 layers as reported for isolated NbSe2 monolayers. These values differ from those of bulk NbSe2. For the first time, a normal-to-superconducting transition has been detected in ferecrystals. The transition temperatures of the ferecrystals are reduced to about a half of those of analogous non-disordered misfit layer compounds. This reduction in transition temperature can be correlated to the turbostratic disorder in ferecrystals. The ratio between the cross-plane Ginzburg-Landau coherence length and the cross-plane distance between the NbSe2 layers for the ferecrystals is lower than for non-disordered misfit layer compounds, making ferecrystals promising candidates for (quasi-)two-dimensional superconductors.

Submitted by ARMANDO ARQUIMEDES PEZO LOPEZ (armandopezo333@gmail.com) on 2017-09-15T18:49:05Z No. of bitstreams: 1 pezo_a_ms_ift.pdf: 7486652 bytes, checksum: 7101195a7ca026fe9e98885ba89961f1 (MD5) / Approved for entry into archive by Monique Sasaki (sayumi_sasaki@hotmail.com) on 2017-09-19T17:23:53Z (GMT) No. of bitstreams: 1 pezolopez_aa_me_ift.pdf: 7486652 bytes, checksum: 7101195a7ca026fe9e98885ba89961f1 (MD5) / Made available in DSpace on 2017-09-19T17:23:53Z (GMT). No. of bitstreams: 1 pezolopez_aa_me_ift.pdf: 7486652 bytes, checksum: 7101195a7ca026fe9e98885ba89961f1 (MD5) Previous issue date: 2016-08-02 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / A realização experimental do grafeno em 2004 abriu as portas para os estudos de uma nova geração de materiais, estes chamados materiais bidimensionais são a expressão final do que poderíamos pensar em material plano (monocamada) que, eventualmente, podem ser empilhados para formar o bulk. O grafeno oferece uma grande variedade de propriedades físicas, em grande parte, como o resultado da dimensionalidade de sua estrutura, e pelas mesmas razões, materiais como Fosforeno (P), Siliceno (S), Nitreto de Boro hexagonal (hBN), dicalcogenos de metais de transição (TMDC), etc. São muito interessantes para fins teóricos, como para futuras aplicações tecnológicas que podem-se desenvolver a partir deles, como dispositivos de spintrônica e armazenamento. Neste trabalho o estudo desenvolvido são as propriedades eletrônicas dos materiais apresentados acima (grafeno, fosforeno e MoTe 2 ), e além disso, ja que o acoplamento spin-órbita aumenta à medida que o número atômico tambem aumenta, espera-se que este parâmetro desempenhe um papel na estrutura eletrônica, particularmente para os TMDC’s. Começamos descrevendo genéricamente esses três sistemas, isto é, para o grafeno, podemos usar uma abordagem tipo tight binding, a fim de encontrar a dispersão de energia para as quase-particulas perto do nível de Fermi (Equação de Dirac). Usando cálculos DFT estudou-se de forma geral as propriedades desses sistemas com a inclusão do espin órbita. Abordou-se cálculos para descrever os efeitos do acoplo spin órbita sobre os materiais isolados, tambem nas heterostruturas (duas camadas formadas por eles). Finalmente, tambem estudou-se a possibilidade de defeitos e sua possível influência sobre a estrutura eletrônica das heterostruturas. / The experimental realization of graphene in 2004 opened the gates to the studies of a new generation of materials, these so-called 2 dimensional materials are the final expression of what we could think of a plane material (monolayer) that eventually can be stacked to form a bulk. Graphene, the wonder material, offers a large variety of physical properties, in great part, as the result of the dimensionality of its structure, and for the same reasons, materials like phosphorene(P), silicene(S), hexagonal Boron Nitride (hBN), transition metal dichalcogenides(TMDC), etc. are very interesting for theoretical purposes, as for the future technological applications that we can develope from them, such as Spintronics and Storage devices. In this dissertation we theoretically study the electronic properties of the materials presented above (graphene, Phosphorene and MoTe2), and besides that, since the spin-orbit coupling strength increases as the atomic number does, we expect that this paremeter plays a role in the electronic structure, particularly for the TMDC. We start describing generically those three systems using density functional theory including the effect of spin orbit. We address calculations to describe the effects of spin orbit on the isolated materials as well as the heterostructures. Finally we also include the possibility of defects in graphene and their possible influence on the electronic structure of heterostructures.

Discovery of grapheme has paved way for experimental realization of many physical phenomena such as massless Dirac fermions, quantum hall effect and zero-field conductivity. Search for other two dimensional (2D) materials led to the discovery of boron nitride, transition metal dichalcogenides(TMDs),transition metal oxides(MO2)and silicene. All of these materials exhibit different electronic and transport properties and are very promising for nanodevices such as nano-electromechanical-systems(NEMS), field effect transistors(FETs),sensors, hydrogen storage, nano photonics and many more. For practical utility of these materials in electronic and photonic applications, varying the band gap is very essential. Tuning of band gap has been achieved by doping, functionalization, lateral confinement, formation of hybrid structures and application of electric field. However, most of these techniques have limitations in practical applications. While, there is a lack of effective method of doping or functionalization in a controlled fashion, growth of specific sized nanostructures (e.g., nanoribbons and quantum dots),freestanding or embedded is yet to be achieved experimentally. The requirement of high electric field as well as the need for an extra electrode is another disadvantage in electric field induced tuning of band gap in low dimensional materials. Development of simpler yet effective methods is thus necessary to achieve this goal experimentally for potential application of these materials in various nano-devices. In this thesis, novel methods for tuning band gap of few 2D materials, based on strain and stacking, have been proposed theoretically using first principles based density functional theory(DFT) calculations. Electronic properties of few layered nanomaterials are studied subjected to mechanical and chemical strain of various kinds along with the effect of stacking pattern. These methods offer promising ways for controlled tuning of band gap in low dimensional materials. Detailed methodology of these proposed methods and their effect on electronic, structural or vibrational properties have also been studied. The thesis has been organized as follows: Chapter1 provides a general introduction to the low dimensional materials: their importance and potential application. An overview of the systems studied here is also given along with the traditional methods followed in the literature to tune their electronic properties. The motivation of the current research work has also been highlighted in this chapter. Chapter 2 describes the theoretical methodology adopted in this work. It gives brief understanding of first principles based Density Functional Theory(DFT) and various exchange and correlation energy functionals used here to obtain electronic, structural, vibrational and magnetic properties of the concerned materials. Chapter 3 deals with finding the origin of a novel experimental phenomenon, where electromechanical oscillations were observed on an array of buckled multiwalled carbon nanotubes (MWCNTs)subjected to axial compression. The effect of structural changes in CNTs in terms of buckling on electronic properties was studied. Contribution from intra-as well as inter-wall interactions was investigated separately by using single-and double-walled CNTs. Chapter 4 presents a method to manipulate electronic and transport properties of graphene bilayer by sliding one of the layers. Sliding caused breaking of symmetry in the graphene bilayer, which resulted in change in dispersion in the low energy bands. A transition from linear dispersion in AA stacking to parabolic dispersion in AB stacking is discussed in details. This shows a possibility to use these slid bilayers to tailor graphene based devices. Chapter 5 develops a method to tune band gap of bilayers of semiconducting transition metal dichalcogenides(TMDs) by the application of normal compressive strain. A reversible semiconductor to metal(S-M) transition was reported in this chapter for bilayers of TMDs. Chapter 6 shows the evolution of S-M transition from few layers to the bulk MoS2 under various in-plane and out of plane strains. S-M transition as a function of layer number has been studied for different strain types. A comparison between the in-plan and normal strain on modifying electronic properties is also presented. Chapter 7 discusses the electronic phase transition of bulk MoS2 under hydrostatic pressure. A hydrostatic pressure includes a combined effect of both in-plane and normal strain on the structure. The origin of metallic transition under pressure has been studied here in terms of electronic structure, density of states and charge analysis. Chapter 8 studies the chemical strain present in boron nitride nanoribbons and its effect on structural, electronic and magnetic properties of these ribbons. Properties of two achiral (armchair and zig-zag) edges have been analyzed in terms of edge energy and edge stress to predict stability of the edges. Chapter9 summarizes and concludes the work presented in this thesis.

This work is focused on the study of luminescence of atomic thin layers of transition metal chalkogenides (eg. MoS2). In the experimental part, the work deals with the preparation of atomic thin layers of semiconducting chalcogenides and the subsequent manufacturing of plasmonic interference structures around these layers. The illumination of the interference structure will create a standing plasmonic wave that will excite the photoluminescence of the semiconductor. Photoluminescence was studied both by far-field spectroscopy and near-field optical microscopy.

<div> <div> <div> <p> </p><div> <div> <div> <div> <div> <div> <p> </p><div> <div> <div> <p>Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) and transition metal carbides/nitrides (MXenes), have been recently receiving attention for gas sensing applications due to their high specific area and rich surface functionalities. However, using pristine 2D materials for gas-sensing applications presents some drawbacks, including high operation temperatures, low gas response, and poor selectivity, limiting their practical sensing applications. Moreover, one of the long-standing challenges of MXenes is their poor stability against hydration and oxidation in a humid environment, which negatively influences their long- term storage and applications. Many studies have reported that the sensitivity and selectivity of 2D materials can be improved by surface functionalization and hybridization with other materials.</p><p>In this work, the effects of surface functionalization and/or hybridization of these two materials classes (TMDCs and MXenes) on their gas sensing performance have been investigated. In one of the lines of research, 2D MoS2 nanoflakes were functionalized with Au nanoparticles as a sensing material, providing a performance enhancement towards sensing of volatile organic compounds (VOCs) at room temperature. Next, a nanocomposite film composed of exfoliated MoS2, single-walled carbon nanotubes, and Cu(I)−tris(mercaptoimidazolyl)borate complexes was the sensing material used for the design of a chemiresistive sensor for the selective detection of ethylene (C2H4). Moreover, the hybridization of MXene (Ti3C2Tx) and TMDC (WSe2) as gas-sensing materials was also proposed. The Ti3C2Tx/WSe2 hybrid sensor reveals high sensitivity, good selectivity, low noise level, and ultrafast response/recovery times for the detection of various VOCs. Lastly, we demonstrated a surface functionalization strategy for Ti3C2Tx with fluoroalkylsilane (FOTS) molecules, providing a superhydrophobic surface, mechanical/environmental stability, and excellent sensing performance. The strategies presented here can be an effective solution for not only improving materials' stability, but also enhancing sensor performance, shedding light on the development of next-generation field-deployable sensors.</p> </div> </div> </div><div><div><div><div><div><div> </div> </div> </div> </div> </div> </div></div></div></div> </div> </div> </div></div></div></div><div><div><div> </div> </div> </div>

The thesis deals with study of thin layers of transition metal dichalcogenides, especially of molybdenum disulfide. Nanostructures were fabricated on two-dimensional crystals of MoS2 and WSe2. Within followed analysis attention was paid to the photoluminescence properties. In the thesis transition metal dichalcogenides are reviewed and description of the modified process of preparation by micromechanical exfoliation is given.

The interplay between different self-organized electronically ordered states and their relation to unconventional electronic properties like superconductivity constitutes one of the most exciting challenges of modern condensed matter physics. In the present thesis this issue is thoroughly investigated for the prototypical layered material 1T-TaS2 both experimentally and theoretically. At first the static charge density wave order in 1T-TaS2 is investigated as a function of pressure and temperature by means of X-ray diffraction. These data indeed reveal that the superconductivity in this material coexists with an inhomogeneous charge density wave on a macroscopic scale in real space. This result is fundamentally different from a previously proposed separation of superconducting and insulating regions in real space. Furthermore, the X-ray diffraction data uncover the important role of interlayer correlations in 1T-TaS2. Based on the detailed insights into the charge density wave structure obtained by the X-ray diffraction experiments, density functional theory models are deduced in order to describe the electronic structure of 1T-TaS2 in the second part of this thesis. As opposed to most previous studies, these calculations take the three-dimensional character of the charge density wave into account. Indeed the electronic structure calculations uncover complex orbital textures, which are interwoven with the charge density wave order and cause dramatic differences in the electronic structure depending on the alignment of the orbitals between neighboring layers. Furthermore, it is demonstrated that these orbital-mediated effects provide a route to drive semiconductor-to-metal transitions with technologically pertinent gaps and on ultrafast timescales. These results are particularly relevant for the ongoing development of novel, miniaturized and ultrafast devices based on layered transition metal dichalcogenides. The discovery of orbital textures also helps to explain a number of long-standing puzzles concerning the electronic self-organization in 1T-TaS2 : the ultrafast response to optical excitations, the high sensitivity to pressure as well as a mysterious commensurate phase that is commonly thought to be a special phase a so-called “Mott phase” and that is not found in any other isostructural modification.

Die vorliegende Arbeit befasst sich mit Elektronenenergieverlustspektroskopie an unterdotierten Kupratsupraleitern und Übergangsmetalldichalcogeniden. Nach einem kurzen Abriss über die der experimentellen Methode zugrundeliegenden theoretischen Tatsachen folgen zwei experimentelle Kapitel. Für das prototypische Kupratsystem Ca2-xNaxCuO2Cl2 wird für verschiedene Dotierungskonzentrationen zunächst die Entwicklung der Ladungstransferanregungen untersucht. Man findet eine substanzielle Umverteilung des spektralen Gewichtes, verbunden mit einem starken Einbruch der Dispersion dieser Anregungen. Beides wird im Rahmen der Wechselwirkung mit Spinfreiheitsgraden innerhalb der Kupfer-Sauerstoff-Ebene diskutiert. Anschliessend erfolgt die Diskussion einer ausschließlich für zehnprozentige Dotierung auftretenden Symmetriebrechung der optischen Antwortfunktion, für die verschiedene mögliche Szenarien vorgeschlagen werden. Im Kapitel über die Dichalcogenide liegt der Fokus auf dem Verhalten des Ladungsträgerplasmons, das für alle Substanzen dieser Gruppe mit Ladungsordnung eine negative Dispersion aufweist. Dieses Verhalten läßt sich durch in-situ Interkalation zusätzlicher Ladungstraeger umkehren, so dass man eine dotierungsabhängige Plasmonendispersion erhält. Es werden verschiedene Szenarien für dieses Verhalten diskutiert. / The present thesis describes electron energy-loss spectroscopy on underdoped cuprate superconductors and transition-metal dichalcogenides. After a brief introduction into the experimental method there are two experimental chapters. For the prototype cuprate system Ca2-xNaxCuO2Cl2 the behavior of the charge-transfer excitations is investigated as a function of doping. The observed substantial redistribution of spectral weight and the accompanying breakdown of their dispersion is discussed in terms of a coupling to the spin degrees of freedom within the copper-oxygen plane. For x=0.1 there is a pronounced symmetry breaking in the optical response function which is discussed in terms of different possible scenarios. The chapter on the dichalcogenides focuses on the properties of the charge-carrier plasmon which shows a negative dispersion for all representatives of this family exhibiting a charge-density wave instability. This behavior can be influenced by in-situ intercalation of additional charges, the result being a doping dependent plasmon dispersion. Several approaches to reconcile these findings are considered.

This thesis describes the fabrication and characterization of two-dimensional transition dichalcogenides (2D TMDs) nanolayers for various applications in electronic and opto-electronic devices applications. In Chapter 1, crystal and optical structure of TMDs materials are introduced. Many TMDs materials reveal three structure polytypes (1T, 2H, and 3R). The important electronic properties are determined by the crystal structure of TMDs; thus, the information of crystal structure is explained. In addition, the detailed information of photon vibration and optical band gap structure from single-layer to bulk TMDs materials are introduced in this chapter. In Chapter 2, detailed information of physical properties and synthesis techniques for molybdenum disulfide (MoS2), tungsten disulfide (WS2), and molybdenum ditelluride (MoTe2) nanolayers are explained. The three representative crystal structures are trigonal prismatic (hexagonal, H), octahedral (tetragonal, T), and distorted structure (Tʹ). At room temperature, the stable structure of MoS2 and WS2 is semiconducting 2H phase, and MoTe2 can reveal both 2H (semiconducting phase) and 1Tʹ (semi-metallic phase) phases determined by the existence of strains. In addition, the pros and cons of the synthesis techniques for nanolayers are discussed. In Chapter 3, the topic of synthesized large-scale MoS2, WS2, and MoTe2 films is considered. For MoS2 and WS2 films, the layer thickness is modulated from single-layer to multi-layers. The few-layer MoTe2 film is synthesized with two different phases (2H or 1Tʹ). The all TMDs films are fabricated using two-step chemical vapor deposition (CVD) method. The analyses of atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL), and Raman spectroscopy confirm that the synthesis of high crystalline MoS2, WS2, and MoTe2 films are successful. The electronic properties of both MoS2 and WS2 exhibit a p-type conduction with relatively high field effect mobility and current on/off ratio. In Chapter 4, vertically-stacked few-layer MoS2/WS2 heterostructures on SiO2/Si and flexible polyethylene terephthalate (PET) substrates is presented. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) show the structural integrity of two distinct 2D TMD layers with atomically sharp van der Waals (vdW) heterointerfaces. Electrical transport measurements of the MoS2/WS2 heterostructure reveal diode-like behavior with current on/off ratio of ~ 104. In Chapter 5, optically uniform and scalable single-layer Mo1-xWxS2 alloys are synthesized by a two-step CVD method followed by a laser thinning. Post laser treatment is presented for etching of few-layer Mo1-xWxS2 alloys down to single-layer alloys. The optical band gap is controlled from 1.871 to 1.971 eV with the variation in the tungsten (W) content, x = 0 to 1. PL and Raman mapping analyses confirm that the laser-thinning of the Mo1-xWxS2 alloys is a self-limiting process caused via heat dissipation to SiO2/Si substrate, resulting in fabrication of spatially uniform single-layer Mo1-xWxS2 alloy films.