For the new generation wireless communication systems, there is an increasing demand for devices that covers more than one frequency band. This results in a need for wide-band tunable front-ends. The main objective of this study is to use dual band filters in the design of a multi-band front-end. A wide-band low noise amplifier is also required. To accomplish this project, a fixed frequency bandstop filter, a tunable dual-band filter and a wide-band LNA are designed and implemented successfully. The predefined specifications of this front-end include gain, gain flatness, spurious signal rejection, frequency tuning range, noise figure and linearity. Total power dissipation and number of elements are also taken into consideration. Test results of the manufactured front-end are compared with the results of existing single band front-ends. In order to design a good tunable wide-band filter, just tuning its center frequency will not be enough. The noise figure of this dual-band filter will be proportional to its insertion loss if it will be used as a pre-selection filter in front of a LNA. Hence its insertion loss will affect the overall noise figure of the system. If it will be used after the LNA, its linearity will be more important. When a bandpass filter is tuned over wide range of frequencies, its bandwidth varies significantly which leads to a degradation in rejection of the spurious signals. Therefore, there must be a simultaneous control of center frequency, bandwidth and insertion loss while providing enough linearity. In order to accomplish this mission, a filter that has two passbands is designed and implemented. The first passband is tunable between 136MHz and 174MHz while the second one is tunable between 380MHz and 470MHz. Also, the low noise amplifier works properly between 136MHz and 470MHz. As a result, a front-end that covers two bands is obtained.

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The continuous advancement in wireless communications technology demands new approaches to improving the capacity of existing radio links. The high data throughput required can be achieved by the complete utilization of space, time and polarization diversities inherent in any propagation environment. Among the different propagation scenarios, the indoor channels represent a particularly challenging problem given the number and complexity of interactions between the transmitted signal and the environment. This dissertation explores the interrelation between propagation physics and space-time-polarization diversity based on a novel high resolution channel sounding and reconstruction technique. First, a method to reconstruct the indoor complex channel response based on a limited set of samples and the elimination of the interference using deconvolution techniques is presented. Then, the results for the joint angle-of-arrival, delay characterization and depolarization of electromagnetic waves are presented. Finally, a novel approach to using depolarized multipath signals to boost the receiver signal-to-noise performance is presented. The current study shows that full utilization of the diversities of channel novel wireless systems can be proposed with significant improvement in capacity.

The continuous advancement in wireless communications technology demands new approaches to improving the capacity of existing radio links. The high data throughput required can be achieved by the complete utilization of space, time and polarization diversities inherent in any propagation environment. Among the different propagation scenarios, the indoor channels represent a particularly challenging problem given the number and complexity of interactions between the transmitted signal and the environment. This dissertation explores the interrelation between propagation physics and space-time-polarization diversity based on a novel high resolution channel sounding and reconstruction technique. First, a method to reconstruct the indoor complex channel response based on a limited set of samples and the elimination of the interference using deconvolution techniques is presented. Then, the results for the joint angle-of-arrival, delay characterization and depolarization of electromagnetic waves are presented. Finally, a novel approach to using depolarized multipath signals to boost the receiver signal-to-noise performance is presented. The current study shows that full utilization of the diversities of channel novel wireless systems can be proposed with significant improvement in capacity.

Thesis (MScEng)--Stellenbosch University, 2013. / ENGLISH ABSTRACT: This thesis is about the design, simulation and measuring of ultra wide band antennas for use in the Square Kilometre Array (SKA). The SKA is a radio astronomy project with one of the aims of detecting hydrogen particles in deep space. Several thousand antennas over a wide band of frequencies are needed to receive the radiation from these particles. This motivates the need for a low-cost ultra wide band antenna with the focus on the low frequency part of the SKA. In this thesis we present two design strategies: The first design strategy is for a printed LPDA on a substrate and design curves are generated. A scale model was built and measurements did not correlate with simulation results. This is due to manufacturing tolerances and assembly of the pyramidal structure. The second design strategy is for a full scale zig-zag antenna and design curves were also generated. The aim here is to produce a low-cost prototype by using brazing rods for the wire structure and mount it on a wooden frame. A full scale model was built and measurements on the roof produced much interference for the radiation pattern, but the reflection coefficient was good. We suggest doing measurements in an interference free environment in order to achieve the needed results. To conclude we suggest using the zig-zag antenna for the SKA. Some issues do however need more attention as the transformer has some losses, the cross polarisation is probably not good enough and the beamwidth does not reach the specification. We demonstrated a low cost prototype and there is the possibility of low-cost large scale manufacturing but this needs to be addressed. This has however not been analysed as many factors for large scale manufacturing are very difficult to predict beforehand and lies outside the scope of this thesis. / AFRIKAANSE OPSOMMING: Hierdie tesis gaan oor die ontwerp, simulasie en opmeting van ultrawyebandantennas vir gebruik in die SKA ("Square Kilometre Array"). Die SKA is ’n radioastronomie projek met die doel om waterstof partikels op te spoor in die ruimte. Duisende antennas wat oor ’n wye band van frekwensies strek is nodig om die energie van die partikels op te vang. Hieruit is daar ’n aanvraag vir lae-koste ultrawyebandantennas met die fokus op die lae frekwensie deel van die SKA. In hierdie tesis word twee ontwerpstrategieë voorgestel: Die eerste ontwerpstrategie is vir ’n gedrukte logaritmies periodiese dipool reeks (LPDR) op ’n substraat tesame met ontwerpskurwes wat gegenereer word. ’n Skaal model is gebou en die gemete resultate stem nie ooreen met die simulasie nie. Dit kan toegeskryf word aan vervaardigingstoleransies en die aanmekaar sit van die piramide struktuur. Die tweede ontwerpstrategie is vir ’n vol skaal sigsag ("zig-zag") antenna met ontwerpskurwes wat ook gegenereer word. Die doel is om ’n lae-koste prototipe te bou deur sweissoldeerdraad te gebruik vir die draadstruktuur en dan op ’n hout raam te plaas. ’n Vol skaal model is gebou en metings op die dak het baie interferensie veroorsaak vir die stralingsveld, maar tog was die weerkaatskoëffisient goed. Ons stel voor om die metings te herhaal in ’n steuringvrye omgewing om sodoende die korrekte resultate te verkry. Om af te sluit stel ons voor om die sigsag antenna vir die SKA te gebruik. Sekere kwessies soos die transformator wat verlieserig is, die kruispolarisasie wat moontlik nie goed genoeg is nie en die bundelwydte wat nie die spesifikasie haal nie moet nog aandag geniet. Ons het ’n lae-koste prototipe gedemonstreer en daar is die moontlikheid om dit op grootskaalse vervaardiging ook goedkoop te doen, maar dit moet nog uigesorteer word. Dit was wel nie geanaliseer nie, siende dat vele faktore ’n rol speel by grootskaalse vervaardiging wat uiters moeilik is om voor die tyd te voorspel en buite die omvang van die tesis lê.

The recent application of semiconductor materials, such as GaN, to power electronics has led to the development of a new generation of devices, which promise lower losses, higher operating frequencies and reductions in equipment size. The aim of this research is to study the capabilities of emerging GaN power devices, to understand their advantages, drawbacks, the challenges of their implementation and their potential impact on the performance of power converters. The thesis starts by presenting the development of a simple model for the switching transients of a GaN cascode device under inductive load conditions. The model enables accurate predictions to be made of the switching losses and provides an understanding of the switching process and associated energy flows within the device. The model predictions are validated through experimental measurements. The model reveals the suitability of the cascode device to soft-switching converter topologies. Two GaN cascode transistors are characterised through experimental measurement of their switching parameters (switching speed and switching loss). The study confirms the limited effect of the driver voltage and gate resistance on the turn-off switching process of a cascode device. The performance of the GaN cascode devices is compared against state-of-the-art super junction Si transistors. The results confirm the feasibility of applying the GaN cascode devices in half and full-bridge circuits. Finally, GaN cascode transistors are used to implement a 270V - 28V, 1.5kW, 1 MHz phase-shifted full-bridge isolated converter demonstrating the use of the devices in soft-switching converters. Compared with a 100 kHz silicon counterpart, the magnetic component weight is reduced by 69% whilst achieving a similar efficiency of 91%.

Les convertisseurs à base de Si atteignent leurs limites. Face à ces besoins, le GaN, avec sa vitesse de saturation des électrons et le champ électrique de claquage élevés est candidat idéal pour réaliser des redresseurs, surtout s’il est épitaxié sur substrat à bas cout. Ce travail est dédié au développement des diodes Schottky sur AlGaN/GaN. Une couche de SiNx en faible traction a été obtenue. Un contact ohmique de Ti/Al avec une gravure partiel a donné une Rc de 2.8 Ω.mm avec une résistance Rsh de 480 Ω/□. Des diodes Schottky avec les étapes issues de ces études ont été fabriqué. La diode recuite à 400 °C avec 30 nm de profondeur de gravure a montré une hauteur de barrière de 0,82 eV et un facteur d'idéalité de 1,49. La diode a présenté une très faible densité de courant de fuite de 8.45x10-8 A.mm-1 à -400 V avec une tension de claquage entre 480 V et 750 V. / Si-based devices for power conversion applications are reaching their limits. Wide band gap GaN is particularly interesting due to the high electron saturation velocity and high breakdown electric field, especially when epitaxied on low cost substrates such as Si. This work was dedicated to the development and fabrication of the Schottky diode on AlGaN/GaN on Si. SiNx passivation in very low tensile strain is used. Ti (70 nm)/Al (180 nm) partially recessed ohmic contacts annealed at 800 ºC exhibited a 2.8 Ω.mm Rc with a sheet resistance of 480 Ω/sq. Schottky diodes with the previously cited passivation and ohmic contact were fabricated with a fully recessed Schottky contact annealed at 400 ºC. A Schottky barrier height of 0.82 eV and an ideality factor of 1.49 were obtained. These diodes also exhibited a very low leakage current density (up to -400 V) of 8.45x10-8 A.mm-1. The breakdown voltage varied between 480 V and 750 V.

Le nitrure de gallium (GaN) et ses alliages ternaires et quaternaires suscitent de plus en plus d’intérêt dans les communautés scientifiques et industrielles pour leur potentiel d’utilisation dans des dispositifs électroniques haute fréquence, dans les transistors à forte mobilité électroniques, dans la photo-détection UV et les cellules solaires de nouvelles générations. L’aboutissement de ces nouveaux composants reste entravé à l’heure actuelle, entre autre, par la non maîtrise des techniques d’établissement de contacts électriques. C’est dans ce cadre général que s’inscrivent les travaux de cette thèse. Même si l’objectif principal de cette thèse concerne l’étude des défauts électriquement actifs dans les alliages de semiconducteurs à grand gap B(AlGa)N et de leur rôle dans les propriétés de transport, la réalisation des contacts ohmiques et des contacts Schottky constitue une étape essentielle dans la réalisation des dispositifs à étudier. Pour les contacts ohmiques, nous avons déposé des couches de type Ti/Al/Ti/Au (15/200/15/200) par évaporation thermique. Des résistances spécifiques des contacts de l’ordre de 3x10-4Wcm2 ont été déterminées par les méthodes des TLM linéaires et confirmées par les TLM circulaires. Une modélisation théorique a été entreprise dans ce sens pour analyser les mesures expérimentales. Ensuite on a réalisé des diodes Schottky en déposant des contacts métalliques de Platine (Pt) d’épaisseur 150 nm. Des facteurs d’idéalité de 1.3 et une hauteur de barrière de 0.76 eV ont été obtenus et d’une manière reproductible. Une fois ces dispositifs réalisés, une étude des mécanismes de transport a été entreprise et nous a permis de mettre en évidence l’existence des effets tunnel direct et assisté par le champ, en plus de l’effet thermoïonique classique. Ceci a été mis en évidence par des mesures de courant et de capacité en fonction de la température. Pour les photodétecteurs, nous avons réalisés les mêmes mesures de courant et de capacité à l’obscurité et sous illumination à des longueurs d’ondes adaptées. Ces mesures nous ont permis de comprendre les phénomènes de gain qu’on a observés sur ces échantillons et aussi de mettre en évidence des mécanismes thermiquement actifs, dont les énergies d’activation ont été déterminées par la technique de l’Arrhenius. L’étude des défauts électriquement actifs a été menée par la technique transitoire de capacité de niveaux profonds, la (DLTS). Cette technique a été récemment mise en oeuvre au laboratoire et nous a permis d’effectuer des mesures sous différentes conditions incluant diverses polarisations de repos, différentes fréquences, et différentes hauteurs et largeurs d’impulsion de polarisation. Un des résultats importants est la possibilité de caractérisation à la fois des pièges à majoritaires et des pièges à minoritaire en changeant simplement les conditions de polarisation et contrairement aux procédures habituelles où une excitation optique supplémentaire est souvent nécessaire pour augmenter la concentration des porteurs minoritaires. Il a ainsi été mis en évidence, en accord avec la plupart des résultats de la littérature, l’existence de 6 pièges à électrons, tous situés en dessous de 0.9 eV de la bande de conduction, de trois pièges à trous dans l’intervalle 0.6 - 0 .7 eV au dessus de la bande de valence et un piège à trous distribué à l’interface. Une procédure rigoureuse de fit a été mise au point et a permis de confirmer nos résultats obtenus par la procédure classique de l’Arrhenius / Gallium nitride (GaN) and its ternary and quaternary alloys are attracting more and more interest in the scientific and industrial communities for their potential for use in high frequency electronic devices, for transistors with high electronic mobility, for UV photo-detection and new-generation solar cells. The outcome of these new components is still be seen to be limited in many areas, mainly due to the lack of control of electrical contacts implementation techniques. It is in this context that this thesis takes place.Although the main objective of this thesis deals with the study of the electrically active defects in high band gap B(AlGa)N semiconductor alloys and their role in the transport properties, the production of ohmic and Schottky contacts is an essential step in the realization of the devices under study. For the Ohmic contacts, we have deposited Ti/Al/Ti/Au (15/200/15/200) layers by thermal evaporation. Using the Transfer Length Method (TLM), we obtained specific contact resistances in the order of 3x10-4Wcm2. The Circular TLM has also confirmed this result. Besides, a theoretical modelling has been carried out to analyse the experimental measurements. Schottky diodes were then produced by depositing 150 nm platinum (Pt) metal contacts. An ideality factor of 1.3 and a barrier height of 0.76 eV were obtained. On the other hand, a study of transport mechanisms has been performed. It allowed us to demonstrate the existence of the direct tunnelling and the Thermionic Field Emission, in addition to the conventional thermionic effect. This result was underpinned by current and capacity measurements as a function of temperature. For photo detectors, we performed the same measurements of current and capacity in darkness and under illumination at suitable wavelengths. These measurements allowed understanding the internal gain that was observed on the samples. Furthermore, they show the effect of the thermally active mechanisms whose activation energies were determined by the Arrhenius technique. Using the Deep-Level Transient Spectroscopy (DLTS) technique followed up the study of the electrically active defects. This technique has recently been implemented in the laboratory. It allowed us to perform measurements under different conditions including various reverse bias, different frequencies, and different voltage pulse amplitudes and durations. One of the important results is the possibility of characterizing both majority and minority traps by simply changing the polarization conditions, as opposed to the usual procedures where an additional optical excitation is often necessary to increase the concentration of the minority carriers. In accordance with most of the encountered literature results, we found 6 electron traps all located below 0.9 eV of the conduction band, 3 hole traps in the 0.6-0.7 eV range above the valence band and one hole trap distributed at the interface. A rigorous procedure was developed and confirmed our results obtained by the standard Arrhenius technique

Made available in DSpace on 2014-12-17T14:55:43Z (GMT). No. of bitstreams: 1 BrunaALS_DISSERT.pdf: 4847936 bytes, checksum: ecc365df0d6ba32afff7d15a2ae1d14a (MD5) Previous issue date: 2010-06-14 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior / The microstrip antennas are largely used in wireless communication systems due to their low cost, weight, less complex construction and manufacturing, in addition to its versatility. UWB systems have emerged as an alternative to wireless communications over short distances because they offer of higher capacity and lower multipath distortion than other systems with the same purpose. Combining the advantages of microstrip antennas to the characteristics of UWB, it is possible to develop more and more smaller devices, with diverse geometries to operate satisfactorily in these systems. This paper aims to propose alternatives to microstrip antennas for UWB systems operate in the range between 3.1 and 10.6 GHz, with a patch on circular ring. Some techniques are analyzed and employed to increase the bandwidth of proposed antenna: the insertion of a parasitic elements and a rectangular slit in the displaced ground plane. For this, key issues are presented as the basic principles of UWB systems, the fundamental theory of antennas and microstrip antennas. The simulations and experimental characterization of constructed antennas are presented, as well as analysis of parameters such as bandwidth and radiation pattern / As antenas de microfita s?o amplamente utilizadas nos sistemas de comunica??o sem fio devido ?s suas caracter?sticas de baixo custo, peso, menor complexidade de constru??o e fabrica??o, al?m de sua versatilidade. Os sistemas UWB surgiram como uma alternativa ?s comunica??es sem fio de curtas dist?ncias por oferecerem maior capacidade e menor distor??o por multipercurso que outros sistemas com a mesma finalidade. Aliando as vantagens das antenas de microfita ?s caracter?sticas do UWB ? poss?vel desenvolver dispositivos cada vez menores e com geometrias diversificadas para operar satisfatoriamente nesses sistemas. Este trabalho tem como objetivo propor alternativas de antenas de microfita para operar em sistemas UWB, na faixa entre 3,1 e 10,6 GHz, com patch em anel circular. S?o empregadas e analisadas algumas t?cnicas para aumentar a largura de banda das antenas propostas: a inser??o de elementos parasitas e de uma fenda retangular no plano terra deslocado. Para isto, s?o apresentados temas fundamentais como os princ?pios b?sicos dos sistemas UWB, a teoria fundamental de antenas e antenas de microfita. S?o apresentadas as simula??es e caracteriza??es experimentais das antenas constru?das, bem como uma an?lise de par?metros como a largura de banda e o diagrama de radia??o

The purpose of this thesis was to investigate the feasibility of a wireless architectural approach for intra-vehicle communications. The current wired architecture was compared to a wireless approach based on three prominent wireless protocols, namely Bluetooth Low-Energy, Ultra Wide-Band, and 60 GHz Millimeter wave technology. The evaluation was focused on their potential use within the intra-vehicle domain, and judged by characterizing properties such as frequency, bandwidth utilization, and power efficiency. A theoretical study targeting the propagating behavior of electromagnetic waves was also involved. In particular, wireless behavior has been investigated both in general aspects as well as specifically aimed towards the intra-vehicle application. The theoretical study was then concluded and presented with a course of action regarding wireless connectivity. Beneficial design considerations, potentials and challenges were highlighted together with a discussion on the feasibility of a wireless architectural approach. Suggestions for future work and research have been given, which include further expansion of targeted protocols, alleviating the restricted security aspects, and extend the physical aspects onto more software based approaches.