The radio frequency (RF) spectrum as a natural resource is severely under-utilized over time and space due to an inefficient licensing framework. As a result, in-creasing cellular and wireless network usage is placing significant demands on the licensed spectrum. This has led to the development of cognitive radios, software defined radios and mm-wave radios. Cognitive radios (CRs) enable more efficient spectrum usage over a wide range of frequencies and hence have emerged as an effective solution to handle huge network demands. They promise versatility, flex-ability and cognition which can revolutionize communications systems. However, they present greater challenges to the design of radio frequency (RF) front-ends. Instead of a narrow-band front-end optimized and tuned to the carrier frequency of interest, cognitive radios demand front-ends which are versatile, configurable, tun-able and capable of transmitting and receiving signals with different bandwidths and modulation schemes. The primary purpose of this thesis is to design a re-configurable, wide-band and low phase-noise fast settling frequency synthesizer for cognitive radio applications. Along with frequency generation, an area efficient multi-band low noise amplifier (LNA) with integrated built-in-self-test (BIST) and a strong immunity to interferers has also been proposed and implemented for these radios. This designed LNA relaxes the specification of harmonic content in the synthesizer output. Finally some preliminary work has also been done for mm-wave (V-band) frequency synthesis. The Key Contributions of this thesis are: A frequency synthesizer, based on a type-2, third-order Phase Locked Loop (PLL), covering a frequency range of 0.1-5.4 GHz, is implemented using a 0.13 µm CMOS technology. The PLL uses three voltage controlled oscillators (VCOs) to cover the whole range. It is capable of switching between any two frequencies in less than 3 µs and has phase noise values, compatible with most communication standards. The settling of the PLL in the desired state is achieved in dynamic multiple steps rather than traditional single step settling. This along with other circuit techniques like a DAC-based discriminator aided charge pump, fast acquisition pulse-clocked based PFD and timing synchro-negation is used to obtain a significantly reduced settling time A single voltage controlled LC-oscillator (LC-VCO) has been designed to cover a wide range of frequencies (2.0-4.1 GHz) using an area efficient and switch-able multi-tap inductor and a capacitor bank. The switching of the multi-tap inductor is done in the most optimal manner so as to get good phase-noise at the output. The multi-tap inductor provides a significant area advantage, and in spite of a degraded Q, provides an acceptable phase noise of -123 dBc/Hz and -113 dBc/Hz at an offset of 1 MHz at carrier frequencies of 2 and 4 GHz, respectively. Implemented in a 0.13 µm CMOS technology, the oscillator with ≈ 69 % tuning range, occupies an active area of only 0.095 mm2. An active inductor based noise-filter has been proposed to improve the phase-noise performance of the oscillator without much increase in the area. A variable gain multi-band low noise amplifier (LNA) is designed to operate over a wide range of frequencies (0.8 GHz to 2.4 GHz) using an area efficient switchable-π network. The LNA can be tuned to different gain and linearity combinations for different band settings. Depending upon the location of the interferers, a specific band can be selected to provide optimum gain and the best signal-to-intermodulation ratio. This is accomplished by the use of an on-chip Built-in-Self-Test (BIST) circuit. The maximum power gain of the amplifier is 19 dB with a return loss better than 10 dB for 7 mW of power consumption. The noise figure is 3.2 dB at 1 GHz and its third-order intercept point (I I P3) ranges from -15 dBm to 0 dBm. Implemented in a 0.13 µm CMOS technology, the LNA occupies an active area of about 0.29 mm2. Three different types of VCOs (stand-alone LC VCO, push-push VCO and a ring oscillator based VCO) for generating mm-wave frequencies have been implemented using 65-nm CMOS technology and their measured results have been analyzed

Made available in DSpace on 2014-12-17T14:55:40Z (GMT). No. of bitstreams: 1 FranciscoAB.pdf: 846082 bytes, checksum: d9718796dd9ac807f8f053e7d371d2bb (MD5) Previous issue date: 2009-09-03 / Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico / This work presents an wideband ring VCO for cognitive radio five-port based receivers. A three-stage differential topology using transmission gate was adopted in order to maintain wide and linear tuning range and a low phase-noise. Monte-Carlo analysis were performed for phase-shift response of individual stages, which is an important figure of merit in five-port works. It was observed a fairly linear correlation between control voltage and oscillation frequency in the range between 200 MHz and 1800 MHz. The VCO was preliminarily designed for IBM 130nm CMOS technology / Este trabalho apresenta um VCO anel banda-larga para ser utilizado em receptores para R?dio Cognitivo baseados no correlator a cinco portas. Uma arquitetura diferencial de tr?s est?gios com porta de transmiss?o ? utilizada como forma de manter uma sintonia linear em larga faixa de frequ?ncias, bem como, um baixo ru?do de fase. An?lises de Monte-Carlo foram feita para avaliar as varia??es de fase em cada est?gio, o que constitui uma figura de m?rito importante em receptores baseados no correlator de cinco portas. Observou-se correspond?ncia razoavelmente linear entre tens?o de controle e freq??ncia de oscila??o na faixa compreendida entre 200 MHz e 1800 MHz. O VCO foi preliminarmente projetado para tecnologia CMOS IBM de 130 nan?metros

All DC/DC converter products include power electronic circuits for power conversion.It is important to find an efficient way for power conversion to reduce power losses and reduce the need for cooling and achieve environmentally friendly solutions.The use of semiconductor switches of wide band gap type is a solution to the problem.Therefore, the investigation of the SiC MOSFET in DC/DC converters is of crucial importance for the reduction of power losses.The thesis investigates the SiC MOSFET in three different tests.The efficiency test, the temperature test and the double pulse test.In the efficiency, the MOSFET STC3080KR and NTH4L022N120M3S are compared with their respective simulation made on PLECS.While in the temperature test the STC3080KR is investigated at different frequencies.In Double Pulse Test the MOSFET STC3080KR with 4-pin (TO-247 4L) package is compared with the MOSFET SCT3080KLHRC11 with 3-pin package (TO-247 N).The efficiency test shows that the MOSFET SCT3080KR in the practical test gives an efficiency in the range of 96,5-96,1% at 110kHz, 96-95,4% at 150kHz and 95,8-94,2% at 180kHz.While, the NTH4L022N120M3S gives an efficiency in the range of 98,1-97,1% at 110kHz, 96,3-96,2% at 150kHz and 96,1-95,5% at 180kHz.The efficiency given by the simulation is higher than the actual efficiency for both MOSFETs.However, the shape of the curves in the practical part matches the simulated one.The efficiency is not the same since the simulation do not consider all the losses present in the practical part.The temperature test shows that the temperature for the high side and low side increases when the frequency and the load current increases.However, some results show that when the load current increases at some point the low-side MOSFET will reach the temperature of the high-sided MOSFET and at the end it will exceed its value. This is due to the increment of the conduction losses since the low side MOSFET is basically the body diode incorporated in the MOSFET.Finally, the Double Pulse Test shows that the TO-247 N (3-pin) package switches with less source inductance compared to the TO-247 4L (4-pin) package.Therefore, the MOSFET SCT3080KLHRC11 (TO-247 N package) needs more time during the switching and which means that the switching power losses will be higher in comparison to the SCT3080KR as shown in Table 5.2 and Table 5.1. / Alla DC/DC-omvandlarprodukter inkluderar kraftelektroniska kretsar för effektomvandling. Detta gör att det är viktigt att hitta ett effektivt sätt för effektomvandlingen för att minska effektförlusterna och minska behovet av kylning och uppnå miljövänliga lösningar.Användningen av halvledaromkopplare med ett stort bandgap är en lösning på problemet.Därför är undersökningen av SiC MOSFET i DC/DC-omvandlare av avgörande betydelse för att minska effektförlusterna. Detta examensarbete undersöker SiC MOSFET i tre olika tester vilket är; Effektivitetstestet, temperaturen testet och double pulse testet.I effektivitets testet jämförs MOSFET STC3080KR och NTH4L022N120M3S med deras respektive simulering gjorda på PLECS.Medan i temperaturtestet undersöks STC3080KR vid olika frekvenser.I double pulse testet jämförs MOSFET STC3080KR med ett 4-stifts (TO-247 4L)-paket med MOSFET SCT3080KLHRC11 med ett 3-stiftspaket (TO-247 N).Effektivitetstestet visar att MOSFET SCT3080KR i det praktiska testet ger en verkningsgrad i intervallen 96,5-96,1% vid 110kHz, 96-95,4% vid 150kHz och 95,8-94,2% och vid 180kHz.Medan NTH4L022N120M3S visar en effektivitet i intervallet av 98,1-97,1% vid 110kHz, 96,3-96,2% vid 150kHz och 96,1-95,5% vid 180kHz.Verkningsgraden som ges av simuleringen är högre än den praktiska för båda MOSFET:erna.Formen på kurvorna i den praktiska delen matchar den simulerade.Verkningsgraden är inte densamma eftersom simuleringen inte tar hänsyn till alla förluster som finns i den praktiska delen.Temperaturtestet visar att temperaturen för den höga sidan och lågsidan ökar när frekvensen och belastningsströmmen ökar.Vissa resultat visar att när belastningsströmmen ökar lågsidans MOSFET når temperaturen hos den högsidiga MOSFET:en och i slutet kommer den att överstiga dess värde.Detta beror på ökningen av ledningsförlusterna eftersom MOSFET på lågsidan i grunden är kroppsdioden som ingår i MOSFET.Slutligen, visar double pulse testet att TO-247 N (3-stifts)-paketet växlar med mindre källinduktans jämfört med till TO-247 4L (4-stifts)-paketet.Därför behöver MOSFET SCT3080KLHRC11 (TO-247 N-paket) mer tid under växlingen och därför blir växlingseffektförlusterna högre jämfört med SCT3080KR, detta visas i Tabell 5.2 och Tabell 5.1.

This work presents a 6.5-kV 1-kA SiC bipolar diode module for megawatt-range medium voltage converters. The study comprises a review of SiC devices and bipolar diodes, a description of the die and module technology, device characterization and modelling and benchmark of the device at converter level. The effects of current change rate, temperature variation, and different insulated-gate bipolar transistor (IGBT) modules for the switching cell, as well as parasitic oscillations are discussed. A comparison of the results with a commercial Si diode (6.5 kV and 1.2 kA) is included. The benchmark consists of an estimation of maximum converter output power, maximum switching frequency, losses and efficiency in a three level (3L) neutral point clamped (NPC) voltage-source converter (VSC) operating with SiC and Si diodes. The use of a model predictive control (MPC) algorithm to achieve higher efficiency levels is also discussed. The analysed diode module exhibits a very good performance regarding switching loss reduction, which allows an increase of at least 10 % in the output power of a 6-MVA converter. Alternatively, the switching frequency can be increased by 41 %.

Dans cette thèse nous nous sommes principalement concentrés sur les transmissions impulsion radio Ultra Large Bande (UWB-IR) qui a plusieurs avantages grâce à la nature de sa bande très large (entre 3.1GHZ et 10.6GHz) qui permet un débit élevé et une très bonne résolution temporelle. Ainsi, la très courte durée des impulsions émises assure une transmission robuste dans un canal multi-trajets dense. Enfin la faible densité spectrale de puissance du signal permet au système UWB de coexister avec les applications existantes. En raison de toutes ces caractéristiques, la technologie UWB a été considérée comme une technologie prometteuse pour les applications WSN. Cependant, il existe plusieurs défis technologiques pour l'implémentation des systèmes UWB. A savoir, une distorsion différente de la forme d'onde du signal reçu pour chaque trajet, la conception d'antennes très larges bandes de petites dimensions et non coûteuses, la synchronisation d'un signal impulsionnel, l'utilisation de modulation d'onde d'ordre élevé pour améliorer le débit etc. Dans ce travail, Nous allons nous intéresser à l'étude et l'amélioration de la synchronisation temporelle dans les systèmes ULB. / The basic concept of Impulse-Radio UWB (IR-UWB) technology is to transmit and receive baseband impulse waveform streams of very low power density and ultra-short duration pulses (typically at nanosecond scale). These properties of UWB give rise to fine time-domain resolution, rich multipath diversity, low power and low cost on-chip implementation facility, high secure and safety, enhanced penetration capability, high user capacity, and potential spectrum compatibility with existing narrowband systems. Due to all these features, UWB technology has been considered as a feasible technology for WSN applications. While UWB has many reasons to make it a useful and exciting technology for wireless sensor networks and many other applications, it also has some challenges which must be overcome for it to become a popular approach, such as interference from other UWB users, accurate modelling of the UWB channel in various environments, wideband RF component (antennas, low noise amplifiers) designs, accurate synchronization, high sampling rate for digital implementations, and so on. In this thesis, we will focus only on one of the most critical issues in ultra wideband systems: Timing Synchronization.

[pt] Este trabalho descreve o desenvolvimento completo de um Amplificador de Potência de RF para Transceptores Multibanda. Em sua etapa inicial mostra um apanhado geral da teoria de todos os parâmetros relevantes para a medida de desempenho desses dispositivos, como potência, ganho e parâmetros de não linearidades. Em seguida são expostas as teorias básicas para o entendimento dos mecanismos para extração da máxima potência de um transistor, focando nos transistores de efeito de campo FET, incluindo a caracterização para regimes de alta potência. São apresentados os modos de operação de um amplificador de potência, focando nos chamados modos clássicos, dado que esses modos são convenientes para operação em banda larga. Para a correta operação de qualquer dispositivo que apresente ganho, a análise de estabilidade é apresentada com o procedimento de estabilização de transistores. A partir de todo o apanhado teórico, é desenvolvida uma metodologia de projeto de amplificadores de potência utilizando a ferramenta de simulação computacional Advanced Design System. Então, após toda a modelagem do amplificador, a construção e medidas são realizadas e boa concordância com a simulação foi obtida. / [en] This work describes the full development of a RF Power Amplifier for Multiband Transceivers. In its initial stage shows an overview of the theory of all relevant parameters to measure the performance of these devices, like power, gain and nonlinearity parameters. Then it exposes the basic theories for the understanding of the mechanisms for extracting the maximum power of a transistor, focusing on field effect transistors FET, including characterization for regimes of high power. It presents the modes of operation of a power amplifier, focusing on so-called classical modes, since these modes are suitable for broadband operation. For proper operation of any device that presents gain, the stability analysis is presented with the stabilization procedure of transistors. From all theoretical basis, is developed a design methodology of power amplifiers using the computational simulation tool Advanced Design System. So after all the amp modeling, construction and measurements are performed and good agreement was obtained with the simulation.

Ce travail de thèse s’articule autour de la problématique du respect des gabarits spectraux d’émission imposés par les règlementations et les normes dans le domaine des émetteurs radio impulsionnels ultra-large bande. Le choix a été fait de réaliser un capteur in-situ venant extraire les informations nécessaires à une estimation sur puce de la densité spectrale de puissance. Un algorithme d’estimation embarqué peut alors permettre de détecter les gabarits violés et pouvoir rétroagir sur le dispositif. La grande diversité constatée parmi les règlementations et les normes en vigueur ainsi que dans les différentes architectures de générateurs d'impulsions a alors motivé la réalisation d'un système de calibration universel à tous les émetteurs par prise d'informations en sortie. Le manuscrit s'est alors employé à représenter une impulsion à partir de son enveloppe instantanée et de sa fréquence instantanée, ces deux grandeurs temporelles pouvant être extraites pour tout type d'impulsions. Il a été également proposé dans le chapitre une première technique de calibration basée sur la modification de l'enveloppe à des instants précis qui permet de faire rentrer le spectre dans le gabarit tout en maximisant l'occupation de celui-ci. Enfin, l'extraction de l'enveloppe instantanée et de la fréquence instantanée a été abordée en proposant une technique d'extraction par transposition de l'information en bande de base. La conception des dispositifs électroniques nécessaires a été présentée et ceux-ci ont été implémentés sur la même puce qu'un générateur d'impulsions dans le but de réaliser un démonstrateur qui a validé l'utilisation du système étudié. / This thesis focusses on the power emission constraints defined by regulations and standards for every kinds of ultra-wide band impulse radio transmitters. In fact, these power emission constraints have to be respected all along the device life. Also, an integrated sensor able to extract the essential information for an on-chip estimation of the power spectral density has been realized. Then, an embedded algorithm is added to the system and detects if a power limit is broken. If necessary, it acts on the transmitter to solve the problem. In the first chapter, a large variety of power constraints shapes and several architectures of impulse generators have been observed and studied. Therefore, the aim of this thesis is to realise a calibration system which would be universal to all impulse radio transmitters. After its extraction at the output of the transmitter, information have to be downconverted in order to reduce the constraints on conversion stage but without using a local oscillator and a mixer. A model for the impulse signal based on the instantaneous envelop and on the instantaneous frequency has been proposed in the second chapter. A new calibration method based on these two signals is also presented. The last chapter concentrates on detailing the extraction of the instantaneous envelop and the instantaneous frequency. The design of the electronic devices essential to this extraction is presented and a chip has been realised and the viability of the solution shown.

De nos jours, les énergies renouvelables remplacent les énergies fossiles. Pour assurer une l’interconnexion entre toutes ces installations électriques, l’électronique de puissance est nécessaire. Les principales spécifications de la prochaine génération de convertisseur de puissances sont un rendement et une densité de puissance élevés, fiabilité et faibles coûts. L’intégration PCB des composants actifs et/ou passifs est perçue comme une approche prometteuse, peu onéreuse et efficace. Les délais ainsi que les coûts de fabrication des convertisseurs de puissance peuvent considérablement réduits. L’intégration permet également d’améliorer les performances des convertisseurs. Dans ce but, un concept original d’inductance 3D pliable utilisant la technologie PCB est présenté. Il permet un coût faible pour une production en série, ainsi qu’une excellente reproductibilité. Un usinage partiel de la carte PCB est utilisé, permettant le pliage et la conception des enroulements de l’inductance. Différents prototypes sont développés par le biais d’une procédure d’optimisation. Des tests électriques et thermiques sont réalisés pour valider l’applicabilité du concept au sein de convertisseurs de puissance.Le développement d’une procédure d’optimisation appliqué aux convertisseurs hautement intégrés utilisant l’enterrement PCB est présenté. Tous les choix importants, facilitant l’intégration PCB, e.g. réduction des composants passifs, sont présentés. Cela inclut la sélection de la topologie adéquate avec la modulation associée. La procédure de design et les modèles analytiques sont introduits. Il en résulte un convertisseur comprenant quatre pont-complet entrelacés avec des bras fonctionnant à basse (50 Hz) et haute (180 kHz) fréquences. Cette configuration autorise une variation de courant importante dans les inductances, assurant ainsi la commutation des semi-conducteurs à zéro de tension (ZVS), et ceux sur une période complète du réseau. L’impact de la forte variation de courant sur le filtre CEM est compensé par l’entrelacement. Deux prototypes d’un convertisseur AC/DC bidirectionnel de 3.3 kW sont présentés, les résultats théorique et pratique sont analysés.Pour augmenter la densité de puissance du system, un filtre actif de type “Buck” est étudié. La procédure d’optimisation est adaptée à partir de la procédure implémentée pour le convertisseur AC/DC. L’approche utilisée, mène à un convertisseur opérant également en ZVS durant une période compète du réseau, et ce, à fréquence de commutation fixe. Les technologies sélectionnées, condensateur céramique et inductance compatible avec la technologie PCB sont favorable à l’intégration et sont implémenté sur le prototype. / Nowadays, the green energy sources are replacing fossil energies. To assure proper interconnections between all these different electrical facilities, power electronics is mandatory. The main requirements of next generation converters are high efficiency, high power density, high reliability and low-cost. The Printed Circuit Board (PCB) integration of dies and/or passives is foreseen as a promising, low-cost and efficient approach. The manufacturing time and cost of power converters can be drastically reduced. Moreover, integration allows the converter performances to be improved. For this purpose, an original 3D folded power inductor concept using PCB technology is introduced. It is low cost for mass production and presents good reproducibility. A partial milling of the PCB is used to allow bending and building the inductor winding. Prototypes are designed through an optimisation procedure. Electrical and thermal tests are performed to validate the applicability in power converters. The development of an optimisation procedure for highly integrated converters, using PCB embedding, is presented. All important choices, facilitating the PCB integration, e.g. reduction of passive components, are presented. It includes the selection of the suitable converter topology with the associated modulation. The design procedure and implemented analytical models are introduced. It results in four interleaved full-bridges operating with low (50 Hz) and high (180 kHz) frequency legs. The configuration allows high current ripple in the input inductors inducing zero voltage switching (ZVS) for all the semiconductors, and for a complete grid period. The impact of high current ripple on the EMI filter is compensated by the interleaving. Two prototypes of a 3.3 kW bidirectional AC/DC converters are presented, theoretical and practical results are discussed. To further increase the power density of the overall system, a Buck power pulsating buffer is investigated. The optimisation procedure is derived from the procedure implemented for the AC/DC converter. The result favours an original approach, where the converter also operates with ZVS along the entire main period at a fixed switching frequency. The selected technologies for prototyping are integration friendly as ceramic capacitors and PCB based inductors are implemented in the final prototype.

Les travaux présentés dans ce manuscrit sont dédiés à l'étude des composants passifs pour l'électronique de puissance à haute température. Des condensateurs et des matériaux magnétiques sont sélectionnés et caractérisés jusqu'à environ 250°C. Les caractéristiques électriques et électromagnétiques montrent, pour certains de ces composants et matériaux, des dépendances significatives en fonction de la température, mais également des non-linéarités et des phénomènes d'hystérésis. Les caractérisations sont ensuite exploitées pour la conception d'un filtre CEM d'entrée d'un onduleur de tension de 2kW. Une démarche et des considérations liées au dimensionnement d'un filtre sont détaillées. Un démonstrateur de filtre CEM est testé en charge et à haute température (200°C). Les résultats montrent une dépendance relativement faible des perturbations conduites entre 150kHz et 30MHz en fonction de la température (environ +6dBµA entre 25°C et 200°C selon la norme DO-160F). Le fonctionnement à haute température de composants passifs au sein d'un filtre CEM pour l'électronique de puissance a été démontré. En complément du filtre à composant discret et pour répondre aux besoins d'atténuation à haute fréquence qui seront accrus pour les convertisseurs à base de semi-conducteurs à grand gap (SiC et GaN) qui commutent plus rapidement que des interrupteurs de type IGBT en Si, nous avons proposé l'intégration de condensateurs de mode commun au sein d'un module de puissance. Les résultats simulés et expérimentaux ont montré une réduction des perturbations conduites grâce à l'intégration de ces condensateurs. Cette solution, compatible avec un fonctionnement à haute température, est positionnée comme une solution alternative à un filtre d'entrée complexe (multi-niveaux) et s'inscrit dans la tendance actuelle des IPEM (Intelligent/Integrated Power Electronics Module) qui recherche l'intégration de fonctions dans le module de puissance. L'ensemble de ces travaux souligne par ailleurs l'importance du packaging pour l'électronique de puissance à haute température. / The study, which is described in this dissertation, is dedicated to passive components in order to be integrated into high temperature power electronic converters. Capacitors and magnetic materials are selected and characterized up to 250°C. Electrical and electromagnetic characteristics are measured. Some components show a significant temperature deviation, but also a non-linear behavior with a hysteresis phenomenon. Based on these characteristics, a high temperature EMI filter for a 2kW voltage inverter is designed. The design procedure and some practical considerations are discussed. Then, the experimental results from the prototype at 200°C under full load conditions are given. The variation of the conducted emissions, from 150kHz and 30MHz, with the temperature is low (about +6dBµA between 25°C and 200°C into a DO-160F setup). The feasibility of a working EMI filter for high temperature power electronics is demonstrated. To meet the high frequency EMI requirements, with wide-band gap semi-conductors devices which are faster than Si IGBT, a solution based on integrated common mode capacitors into the power module is proposed. With this solution, operation at high temperature is also doable. Experimental results show a reduction of the conducted emissions thanks to these integrated capacitors. We consider this solution as an alternative against an increased complexity of the EMI input filter. It follows the present trends toward the integration of functions into a power module, close to the power switches. Moreover, packaging issues are highlighted and remains as a major limitation for high temperature power electronics.

Les travaux présentés dans cette thèse sont une contribution à l’étude des systèmes d’imagerie active en bande millimétrique et plus spécifiquement sur les parties antennaires et le traitement de signal. Ces travaux ont été menés dans le cadre d’une collaboration entre Canon Research Center France et l’ETR. Une première étude a porté sur les antennes focalisantes et plus spécifiquement sur la lentille de Fresnel avec un procédé de fabrication de matériau à gradient d’indice qui a permis d’améliorer l’efficacité (59%) et la largeur bande de fréquence (75-110 GHz). Cette antenne a été utilisée sur un système rotatif pour imager une scène réelle extérieure. L’étude s’est ensuite focalisée sur la conception d’une configuration Multiple-Input Multiple-Output ou MIMO (entrées multiples, sorties multiples) grâce notamment à l’utilisation d’un dispositif compressif passif 4×1 permettant de réduire, par compression, le nombre de chaînes RF. Ces chaînes sont décompressées par post-traitement. Le dispositif, placé à l’émission, a été associé avec un scanner qui permet de synthétiser un réseau d’antennes à la réception. Cette configuration a permis de générer virtuellement un réseau de plus grande taille, permettant d’améliorer la résolution azimutale du système tout en limitant le nombre de chaînes RF. Cette configuration est utilisée pour imager une scène en chambre anéchoique afin de valider le concept. Pour améliorer encore plus la résolution du système avec un nombre limité de chaînes RF, l’étude d’algorithmes de haute-résolution, ou méthodes d’estimation spectrales, sont utilisés dans des configurations à large bande de fréquences pour imager des cibles en champs proche. L’association de la configuration MIMO, du dispositif compressif passif et des méthodes d’estimation spectrales permet d’améliorer la résolution du système tout en limitant le nombre de chaînes RF nécessaire. / The broad topic of the presented Ph.D. thesis consists in the contribution to the study of Radar imaging systems at millimeter-wave and more specifically to the antennas and signal processing. These works have been carried out during a partnership between Canon Research Center France and IETR. A first study on focusing antennas, particularly on Fresnel lens antennas, thanks to a technological process to manufacture inhomogeneous materials, has allowed to improve the efficiency and the frequency bandwidth. The antenna has been mounted on a rotary system to image a real outdoor scene. Then, the study has been focused on the realization of a Multiple-Input Multiple-Output (MIMO) configuration notably using a 4 × 1 passive compressive device allowing to reduce, by compression, the number of radiofrequency (RF) chains. The chains are decompressed by post-processing. The device, used at the transmitting part, is associated with a scanner that synthetizes a receiving array of antennas. This configuration allows to generate a large virtual array, to improve the azimutal resolution of the system while maintaining acceptable the number of RF chains. This configuration has been used to image a scene in an anechoid chamber to validate the concept. To further improve the spatial resolution of the system for a given number of RF chains, the study of high resolution algorithms, or spectral estimation methods, are used to image scenes in near field and wide-band configurations. The combination of MIMO configurations, the passive compressive device and the spectral estimation methods have allowed to drastically improve the spatial resolution of the radar imaging system while limiting the number of RF chains.