This work presents a new low-temperature fabrication process of metal oxide nanostructures that allows high-aspect ratio zinc oxide (ZnO) and titanium dioxide (TiO2) nanowires and nanotubes to be readily integrated with microelectronic devices for sensor applications. This process relies on a new method of forming a close-packed array of self-assembled high-aspect-ratio nanopores in an anodized aluminum oxide (AAO) template in a thin (2.5 µm) aluminum film deposited on a silicon and lithium niobate substrate (LiNbO3). This technique is in sharp contrast to traditional free-standing thick film methods and the use of an integrated thin aluminum film greatly enhances the utility of such methods. We have demonstrated the method by integrating ZnO nanowires, TiO2 nanowires, and multiwall TiO2 nanotubes onto the metal gate of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), and the delay line of a surface acoustic wave (SAW) device to form an integrated ChemFET (Chemical Field-Effect Transistor) and a orthogonal frequency coded (OFC) SAW gas sensor. The resulting metal oxide nanostructures of 1-1.7 µm in height and 40-100 nm in diameter offer an increase of up to 220X the surface area over a standard flat metal oxide film for sensing applications. The metal oxide nanostructures were characterized by SEM, EDX, TEM and Hall measurements to verify stoichiometry, crystal structure and electrical properties. Additionally, the electrical response of ChemFETs and OFC SAW gas sensors with ZnO nanowires, TiO2 nanowires, and multiwall TiO2 nanotubes were measured using 5-200 ppm ammonia as a target gas at room temperature (24ºC) showing high sensitivity and reproducible testing results.

During the synthesis of well arrayed nano/micro structures through wet chemical methods, plenty of parameters are usually involved. Consequently, it is extremely time- and cost-consuming to find out the optimized synthesis conditions by using the conventional "changing one separate factor at a time" (COST) strategy. Instead, the "statistical experimental design" method has been proven in a few works to be an efficient method for experiments involving many parameters.  With this method, the responses could be optimized efficiently by using only a few experiments. Besides, several responses can be optimized simultaneously. Also, models could be built up and the changing tendency can be plotted to predict the required experimental settings for specific tasks. Two types of well arrayed structures including monolayer arrays of silica spheres and vertically aligned ZnO rod arrays were investigated in this work. Monolayer arrays of silica spheres were synthesized by using a dual-speed spin coating method. With assistance of statistical experimental design, the accelerating rate, the second rotation speed and time of the dual-speed spin coating system were found as non-significant parameters to the ordering degree of the obtained monolayer, and thus they can be fixed. This finding could remarkably increase the feasibility of optimizing the practical process. On the other hand, the relative humidity, the first rotation speed and the suspension concentration are identified as the significant parameters to the structures of the monolayer. Moreover, the optimal values for these three parameters were identified: 23% for the relative humidity, 1000 rpm for the first rotation speed and 30 wt.% for the suspension concentration. With these optimized parameters, the area of the obtained silica sphere monolayers reached over 1 cm2 and the defect-free domain size reached over 4000 μm2. These values are considerably higher compared to the previously reported values. Vertically aligned ZnO rod arrays were fabricated by chemical bath deposition. Parameters including precursor concentration, pH value, reaction temperature, reaction time and addition of capping agent were optimized by using statistical experimental design to improve and optimize the growth quality of ZnO rod arrays. Through several stages of optimization, the growth quality of the obtained structures was remarkably enhanced from sparse or clustered ZnO rods to upright and dense ZnO rods. The boundary conditions to achieve vertically aligned ZnO rods, such as a neutral solution and a precursor concentration over 0.02M, were determined. The changing tendency of the texture coefficient and aspect ratio with the factors was also plotted to predict the required experimental settings for specific requests. The points or regions to achieve the optimal properties were identified as well. For instance, the concentration should be as close as to 0.1 M, while the reaction temperature should be limited to 80-90 ◦C, to achieve the ideal preferential growth. With the optimized parameters, the texture coefficient reached almost the perfect value 1, and the aspect ratio was elevated to 21. Moreover, to obtain a dense ZnO thin film, tri-sodium citrate was added to the reaction system. The diameter was systematically controlled through varying the parameters. When both the diameter and the texture coefficient reached the optimal values, the rods were merged together to form a dense ZnO thin film. Furthermore, comments on the statistical experimental method are proposed, and both the advantages and disadvantages are presented according to the present thesis work. This might help the researchers to avoid the disadvantages and thus to employ this method more efficiently in the future. / <p>QC 20150903</p>

Structural and optical properties of ZnO nanostructures synthesized by low energy ion implantation technique were examined. ZnO molecular ions were implanted into Si/SiO2 substrates at room temperature and then furnace annealed under different temperatures and environments. In all as-implanted samples only Zn nanostructures with varying diameters distributed into the Si/SiO2 matrices were observed. No trace of ZnO was found. The distributions of Zn nanostructures in Si/SiO2 closely matched results from Stopping and Range of Ions in Matter (SRIM) simulations. During annealing at 750 oC, Zn diffused both toward and away from the surface of the substrate and combine with oxygen to form ZnO nanostructures. At higher annealing temperatures ZnO bonding started to break down and transfer to zinc silicate (Zn2SiO4), and at 900 oC the ZnO was completely converted into Zn2SiO4. The average sizes of Zn/ZnO nanostructures depended on the ion fluence. If the fluence increased the average sizes of nanostructures also increased and vice versa. For room temperature photoluminescence (RT-PL), band-edge emission in the ultraviolet (UV) region was observed from all samples annealed at 700 oC/750 oC and were slightly blue shifted as compare to bulk ZnO. Donor-bound exciton (D,X) and acceptor-bound exciton (A,X) transitions were observed in low temperature photoluminescence (PL). The lifetime of both donor-bound excitonic emission (D, X) and acceptor-bound excitonic emission (A, X) were found to be in the picosecond (ps) range.

A wide variety of tunable physio-chemical properties make ZnO nanowires a promising candidate for functional device applications. Although bottom-up grown nanowires are producible in volume, their high-throughput device integration requires control over dimensions and, more importantly, of precise placement. Thus development of top-down fabrication routes with accurate device positioning is imperative and hence pursued in this thesis. ZnO thin film transistors (TFT) were fabricated using solution based precursor zinc neodecanoate. A range of ZnO thin films were prepared by varying process parameters, such as precursor concentrations and annealing temperatures, and then analysed for their optical and electrical characteristics. ZnO TFTs prepared from a 15 % precursor concentration and annealing at 700 $^\circ$C exhibited best device performance with a saturation mobility of 0.1 cm$^2$/V.s and an on/off ratio of 10$^7$. Trap limited conduction (TLC) transport was found to be dominant in these devices. A direct-write electron beam lithography (EBL) process was developed using zinc naphthenate and zinc neodecanoate precursors for the top-down synthesis of ZnO nanowires. Nanoscale ZnO patterns with a resolution of 50 nm and lengths up to 25 $\mu$m were fabricated. A linear mobility of 0.5 cm$^2$/V.s and an on/off ratio of $\sim$10$^5$ was achieved in the micro-FETs with 50 $\mu$m channel width. Interestingly, on scaling down the ZnO channel width down to 100 nm, almost two orders of magnitude enhancement in the linear mobility was observed, which reached $\sim$33.75 cm$^2$/V.s. Such increment in the device performance was attributed to the formation of larger grains and thus reduction in the grain-boundary scattering. Six volatile organic compounds (VOCs) were sensed at room temperature using the direct-write EBL fabricated ZnO devices under UV sensitisation. As the surface-to-volume ratio increases with the decreasing channel width (from 50 $\mu$m to 100 nm), sensing response of the ZnO devices becomes more significant. Ppm level detection of various VOCs was observed; with a 25 ppm level Anisole detection being the lowest concentration. Additionally, using 100 nm device, detection of 10 ppm NO$_2$ was achieved at room temperature. The sensing response towards NO$_2$ was found to be increased with UV illumination and sensor temperature. This led to exhibit $\sim$171 % sensing response for a 2.5 ppm level of NO$_2$.

A crescente urbanização e modernização leva a população a passar cada vez mais tempo em ambientes fechados e com climatização artificial. Estes ambientes são propícios para o desenvolvimento de contaminantes, como compostos orgânicos voláteis e microrganismos, os quais estão diretamente relacionados a problemas de saúde. Neste trabalho, propõe-se o uso de fotocatálise heterogênea para remoção de poluentes orgânicos presentes no ar. O semicondutor escolhido como fotocatalisador para este trabalho foi o óxido de zinco, que possui uma grande capacidade de absorção de luz UV. Inicialmente um estudo sistemático das condições de síntese de microestruturas de ZnO imobilizadas sobre diferentes substratos foi realizado com base em um planejamento de experimentos composto central circunscrito. Foram avaliadas as razões molares dos reagentes NaOH e D-frutose em relação à quantidade de Zn2+ presente no meio reacional, o tempo e a temperatura de síntese. A variável de resposta do sistema foi a porcentagem de degradação de rodamina B sob irradiação de luz ultravioleta por uma hora. Este corante é comumente usado como molécula alvo em ensaios de degradação fotocatalítica servindo de padrão para avaliação da eficiência do catalisador. Os materiais utilizados como substratos para o crescimento das microestruturas foram vidro, cobre e zinco. Os testes realizados permitiram concluir que, dentre os materiais estudados, substrato de zinco é o mais promissor, apresentando uma porcentagem de degradação máxima de 80%. Em relação às condições de síntese, os gráficos de contorno permitem identificar uma região de máxima resposta para o substrato zinco. As variáveis mais significativas do modelo estudado foram a quantidade de NaOH e a temperatura de síntese. Para a segunda etapa desta pesquisa, dois compostos facilmente encontrados em ambientes fechados – limoneno e acetona – foram utilizados como moléculas alvo de compostos orgânicos voláteis. Foram utilizados três reatores com configurações diferentes e três fotocatalisadores para o estudo de degradação fotocatalítica – TiO2 P25, ZnO Merck e nanobastões de ZnO sintetizados em laboratório. Os resultados indicam que o TiO2 apresenta uma maior facilidade de degradação de limoneno do que ZnO, totalizando uma remoção de 70% e 45%, respectivamente. O oposto acontece para acetona, onde ZnO apresentou uma degradação total de 61% e TiO2 48%. Nanobastões de ZnO foram responsáveis pela remoção de menos de 10% de limoneno. Estes resultados indicam a relação da atividade fotocatalítica com a interação entre estrutura do fotocatalisador/molécula alvo. / The increasing urbanization and modernization have led people to spend more and more time indoors and with artificial air conditioning. Such environments are conducive to the development of contaminants, such as volatile organic compounds and microorganisms, which are directly related to health issues. In this work, we propose the use of heterogeneous photocatalysis for organic pollutants removal in air. The semiconductor chosen as photocatalyst for this study was zinc oxide, a material with great UV light absorption capacity. Initially a systematic study of the ZnO microstructures synthesis conditions immobilized on different substrates was performed. In order to do so, a circumscribed central composite design of experiments was developed for each substrate. The reactants molar ratio – NaOH/Zn and Zn/Fructose –, time and temperature of synthesis were evaluated. The response variable was rhodamine B (RhB) degradation percentage using UV light for one hour. This dye is commonly used as a target molecule, been referred as standard test to evaluate the photocatalyst efficiency. The materials used as substrates for microstructures growth were glass, copper and zinc. The experiments shoed that, among the studied materials, zinc substrate is the most promising, with a maximum (RhB) degradation of 80%. Regarding the synthesis condition, the contour plots allow the identification of a maximum response region for the zinc substrate. The most significant variables from the studied model were the molar ratio NaOH/Zn and synthesis temperature. For the following step in this work, two compounds easily found indoors – limonene and acetone – were used as target molecules of volatile organic compounds (VOCs). Three reactors with different configurations, and three photocatalysts – TiO2 P25, ZnO Merck and synthesized ZnO nanorods – were used for the study of photocatalytic degradation. The results indicate that TiO2 has a greater ease of limonene degradation than ZnO, with a total removal of 70% e 45%, respectively. The opposite happens to acetone, where ZnO showed an overall degradation of 61 e 48%, respectively. ZnO nanorods were responsible for less than 10% of limonene removal. This results indicate a relation between photocatalytic activity and photocatalyst structure/target molecule.

Orientador: Gustavo Martini Dalpian / Tese (doutorado) - Universidade Federal do ABC, Programa de Pós-Graduação em Nanociências e Materiais Avançados, 2011

Nas últimas décadas, o interesse na eletrônica flexível tem aumentado. Sistemas que apresentam benefícios, tais como: baixo custo, melhor desempenho, transparência, confiabilidade e melhores credenciais ecológicas, estão sendo extensivamente pesquisados por vários grupos. Os transistores de filmes-finos possuem potencial para alcançarem essas características. Dispositivos baseados em óxido de zinco (ZnO) tem atraído pesquisadores devido as suas propriedades elétricas, sensoriais e ópticas. Neste trabalho, nanopartículas de ZnO foram utilizadas como semicondutor ativo e cross-linked PVP (polivinilfenol) e PECVD-SiO2 (plasma enhanced chemical vapor deposition silicon dioxide) como dielétricos de porta para integrar transistores de filmes-finos. Este processo de integração tem por objetivo os pré-requisitos de baixo custo e baixa temperatura (<200°C). Por esta razão, a utilização de técnicas de integração simples, como o spin-coating ou a técnica de sidewall-etchback, foram utilizadas. Infelizmente, existem problemas relacionados à confiabilidade em dispositivos baseados em ZnO, entre eles a degradação no tempo ou a histerese. Após uma investigação experimental da histerese na característica de transferência, um modelo qualitativo para o comportamento observado é proposto. Observou-se que a direção da histerese é afetada pela variação da temperatura quando o dielétrico polimérico é usado. Baseando-se na caracterização dos transistores, a polarização do PVP, as armadilhas na superfície das nanopartículas e na interface com o dielétrico, bem como a liberação de moléculas de oxigênio da superfície das nanopartículas foram atribuídas como as principais causas da histerese. Além disso, uma flutuação discreta da corrente é observada em testes de estresse devido à captura e liberação de portadores em determinados caminhos de corrente no transistor, semelhante a random telegraph signal (RTS), relatado em MOSFET nanométricos. Este resultado suporta o hipotético mecanismo de transporte de elétrons (caminhos de percolação) em filmes compostos por ZnO nanoparticulado. / During the last decades, the interest in flexible electronics has arisen. Systems that present benefits such as low cost, improved performance, transparency, reliability and better environmental credential are being extensively researched by several groups. Thin-film transistors (TFT) have good potential concerning these technologies. Therefore, zinc oxide (ZnO) based devices have been attracting researchers for its electrical, sensory and optical properties. In this work, ZnO nanoparticles were used to integrate thin-film transistors, in which cross-linked PVP (Poly(4-vinylphenol)) and PECVD-SiO2 (plasma enhanced chemical vapor deposition silicon dioxide) were used as gate dielectric layer. The complete integration process targets low cost and low temperature requirements (< 200°C). For this reason, simple process techniques as spin-coating or sidewall-etchback were used. Unfortunately, there are different reliability concerns in ZnO devices, among them aging or hysteresis. An experimental investigation of the hysteresis in the transfer characteristic is performed, and a qualitative model for the observed behavior is proposed. It was observed that the hysteresis direction is affected by temperature variation when the polymeric dielectric is used. The PVP bulk polarization, the traps in nanoparticles and at the polymeric dielectric interface, as well as the desorption of oxygen molecules in the surface of the nanoparticles, were attributed as the main cause of the hysteretic behavior. Moreover, capture and release of charge carriers by traps at determined current paths in the transistor lead to discrete current fluctuations in stress tests, similar to random telegraph signal (RTS) reported in nanoscale MOSFET. This result supports the hypothesis of charge transport mechanism (percolation paths) in nanoparticulate ZnO.

Two identified setbacks for CIGS based devices in order to obtain higher efficiency are parasitic absorption in the window layer structure and losses in open-circuit voltage due to bad interfaces. This study investigated how the performance of the solar cell is affected by depositing intrinsic ZnO (i-ZnO) and ZnMgO with atomic layer deposition (ALD) instead of the conventional sputtering. No significant improvement in fill factor was obtained by the use of ALD compared to sputtering, leading to the conclusion that pinholes in the sputtered film are not a detrimental factor for the cell. As the thickness of the i-layer increased, an increase in FF was observed for the ALD-deposited i-layer, whereas a decrease was observed for the sputtered i-layer. The open-circuit voltage was considered constant between the two series with only small fluctuations, indicating that the defect chemistry of the i-ZnO/CdS interface was not improved with the use of ALD. In this study it is shown that a gain in short-circuit current can be obtained for CIGS solar cells in the high energy region of the spectrum by reducing the thickness of the i-ZnO, as well as alloying the ZnO with Mg. When compared with a baseline layer sample with a sputtered i-layer thickness of around 90 nm, the estimated gain in short-circuit current density without a loss in fill factor was 0.14 and 0.20 mA/cm2 for ALD and sputtering, respectively. For the series with a ZnMgO i-layer, the highest estimated gain was 0.17 mA/cm2. This was observed for the sample with a 4:1 (Zn:Mg) pulse ratio, whereas higher Mg contents yielded a too high band gap that resulted in an electron blocking barrier.

A piezoelectric microspeaker device that could be used in a variety of acoustic applications was designed and fabricated using a thin film ZnO layer that was reactively DC sputtered onto a single crystalline n-type silicon substrate. When tested the microspeaker did not produce sound due to complications in the etching process, the thickness of the diaphragms, and clamping effects. Instead, a characterization approach was taken and the structural, optical, electrical, and piezoelectric properties of the ZnO were investigated. Scanning electron microscopy, x-ray diffraction, and atomic force microscopy were utilized to discover the ZnO’s structural properties. Using the XRD and SEM, the as-sputtered ZnO films were found to have highly c-axis oriented columnar crystals. Optical properties were determined from the reflectance spectrums obtained from a Filmetrics F20 reflectometer and were used to determine the film thickness, the optical constants, and the optical band gap of the ZnO thin films. Using a four-point probe, the as-sputtered ZnO films were found to be highly resistive and insulative, mainly due to voided growth boundaries between the crystals. To improve electrical conductivity and piezoelectric response, ZnO samples were annealed at varying temperatures in a nitrogen environment. The annealing process successfully increased the electrical conductivity and piezoelectric properties of the films. The local piezoelectric properties of the ZnO were discovered with an Asylum MFP-3D and a piezoresponse force microscopy (PFM) technique called DART-PFM. The ZnO films that were sputtered with 70 watts and an argon to oxygen gas ratio of 2:1 were found to have the highest d33 piezoelectric coefficients. The ZnO sample that was annealed at 600°C for 30 minutes had the highest overall d33 value of 4.0 pm/V, which means that the 600°C annealed ZnO films would have the best chance of making a functional microspeaker.

As far as we know, we only have one planet to live on, with a delicate atmospheric system providing us safety and life. Global CO2 emissions continue to plague the environment of Earth, primarily due to the processing of fossil fuels, deforestation, and industrialization. There are several avenues of pursuing CO2 reutilization, each having their own benefits and limitations. Direct and indirect thermochemical approaches of CO2 conversion boast of efficient CO2 conversion rates but have limitations associated with the use of renewable hydrogen and high temperatures of operation. The work in this dissertation investigates low temperature photocatalytic CO2 conversion, a simple principle, which provides opportunity for fuel production while harvesting solar energy. Large scale implementation of this process has been plagued by limitations such as fast electron/hole recombination rates, poor quantum efficiency, product selectivity, catalyst stability, and the band gap energy (Eg) being too large to harvest solar light. Our long term goals and applications look to utilize sustainable fuel generation in-situ on Mars for human exploration. We must use available Mars resources to generate fuel to save launch and resource costs from Earth, utilizing the Sun, Mars atmospheric CO2 (95%), and H2O that can be harvested from subsurface ice. Visible light activated catalysts are needed for applications of CO2 conversion on Earth and Mars due to the intensity and abundance of visible light available in the solar spectrums. The dissertation presents the development of photocatalysts for CO2 reduction in the presence of H2O under visible light irradiation. Detailed chemical analysis and characterization were performed on the photocatalysts for improved understanding of material design, including optical and elemental properties, charge transport, stability, catalytic function and scalability. Induced defects and impurities were implemented to understand Eg tunability. Introducing defects through impurities reduced the electron confinement effects in some cases, increasing the photocatalytic activity. Three material regimes were synthesized, tuned, and tested for catalytic function. The first was a series of (ZnO)1-x(AlN)x, materials that had not been synthesized previously, nor ever demonstrated in CO2 and H2O under solar irradiation. The Zn:Al materials were derived from layered double hydroxides. The second material set was (ZnO)1-x(GaN)x, also derived from layered double hydroxides. To the best of our knowledge, these Zn:Ga materials were demonstrated for the first time in CO2 reduction to CO under visible light without the use of any noble metal co-catalysts or dopants. The third set of materials were MoS2 nanoflowers synthesized via chemical vapor deposition that, to our pleasant surprise, produced thinly stacked sheets in the form of nanoflowers that contained large edge-site exposure, which was vastly different from the morphology of commercially purchased MoS2. The preliminary results from this work have demonstrated that tunable band gap energy is achievable. The (ZnO)1-x(AlN)x Eg ranged from 2.84 to 3.25 eV. The Zn:Al solid solution materials were tuned by increasing nitridation time, and varying the cationic ratio. Increasing the cationic ratio in this study more than tripled CO production under solar light irradiation compared to lower cationic ratios. The (ZnO)1-x(GaN)x, materials had a Eg range from 2.33 eV to 2.59 eV. The Eg was also easily tunable from varying nitriding time and cationic ratio. The highest CO production rate was the Zn:Ga cationic ratio of 3:1 at 20 min of nitriding time at 100 °C, which produced 1.06 µmol-g-1-h-1. This production was higher than both of our controlled TiO2 experiments, and other reported pure TiO2 solar photoreaction experiments. The results indicate a delicate balance of nitridation and Zn:M3+ ratio should be selected, along with precursor material cation ratios in order to obtain the desired final product and crystal structure. The controlled introduction of imperfections or crystal defects through MoS2 synthesis variations also revealed the tuning ability of flake edge morphology, nanoflower diameter, stacked-sheet thickness, optical Eg and catalytic activity. The nanoflower Eg ranged from 1.38 to 1.83 eV, and the production rates of CO nearly doubled when post treating the nanoflowers in a reduction step. These developments support tunable gas phase photocatalytic activity and can be enhanced further for further photocatalytic reactions, optoelectronics and field emitter applications. The photoreactor studies indicated that careful tuning of the parent material is imperative to understand before adding a co-catalyst or doping process, as the edge site morphology, crystal phase stability, and strain-induced defects impact the photocatalytic performance.