Ces travaux se sont consacrés à l’étude de l’intégration du silicium poreux au procédé de fabrication des TRIACs. Ce matériau a pour but d’optimiser les structures actuelles du point de vue de leur périphérie. Son utilisation en tant que terminaison de jonction pourrait ouvrir la voie à une diminution de la taille des puces et donc augmenter la quantité de puces par wafer. Le silicium poreux est intégré aux périphéries des TRIACs par gravure électrochimique dans du silicium faiblement dopé n (30−40 Ω.cm). Pour assurer le bon déroulement de la réaction et ce dans un cadre industriel, la technique d’injection de trous depuis une jonction p+/n est étudiée. L’influence des paramètres d’anodisation dans ces conditions est analysée. Une double couche composée de silicium macroporeux rempli de silicium mésoporeux et surmonté d’une couche de nucléation a été obtenue. Le silicium poreux est localisé dans la périphérie des TRIACs. Des mesures de tenue en tension d’une jonction p/n présentant cette terminaison à base de silicium poreux ont été évaluées et ont montrées des tenues en tension dix fois supérieures à la même structure sans silicium poreux. Toutefois, des perspectives d’amélioration sont proposées car ces résultats restent insuffisants. / The integration of porous silicon to TRIACs process is studied. The aim of this material is to optimize current structures dedicated to electrical insulation of those components namely the periphery. The use of porous silicon as junction termination could allow the increase of the number of die per wafer. Porous silicon is integrated to TRIAC peripheries by electrochemical etching in low doped n type silicon (30−40 Ω.cm). Hole injection from a p+/n junction is studied to determine the performance of the reaction as part of an industrial microelectronic process. The reaction parameters are studied in those conditions. A double layer consisting in a macroporous layer fully filled with mesoporous silicon and surmounted by a nucleation layer, is obtained. Porous silicon formation is limited to TRIAC peripheries. Voltage withstand of a p/n junction with porous silicon termination shows values ten times higher than the same structure without this insulator. Nevertheless, prospects of improvement are suggested because those results are insufficient.

Ce travail de thèse traite de la production d’hydrogène par le procédé de photoélectrocatalyse en utilisant une photoanode à base de nanotubes de TiO2 verticalement alignés. L’utilisation du TiO2 étant limité pour des applications solaires en raison de son large gap, il est nécessaire de le modifier. Deux approches sont proposées pour modifier les nanotubes de TiO2 et leur permettre d’absorber la lumière visible. La première est une modification chimique du TiO2 par co-dopage cationique-anionique (Ta-N) ou (Nb-N). Les cations sont insérés durant la croissance des nanotubes grâce à une approche inédite, et l’azote est inséré durant le traitement thermique. Ceci a pour effet la formation d’orbitales hybrides qui entraîne une réduction du gap et une activité sous lumière visible, tout en permettant une stabilité de la structure. La seconde approche consiste à déposer des nanoparticules d’Ag sur la surface des nanotubes de TiO2. Grâce au contrôle de la morphologie des nanoparticules d’Ag, leur résonnance plasmonique permet de stimuler l’absorption du TiO2 et ainsi d’augmenter son rendement à la fois sous lumière UV et sous lumière visible. / This work is about the production of hydrogen by photoelectrocatalysis using a vertically aligned TiO2 nanotubes based photoanode. Utilization of TiO2 for solar applications is limited due to its large band gap, it has to be modified. Two approaches are proposed for the modification of the TiO2 nanotubes to make them absorb visible light. The first one is the chemical modification of the TiO2 by (Ta-N) or (Nb-N) cationic-anionic co-doping. Cations are inserted during the growth of the nanotubes by a novel approach, and nitrogen is inserted during heat treatment. This leads to the formation of hybrid orbitals resulting in a band gap reduction and of activity under visible light. The second approach consists of the deposition of Ag nanoparticles on the surface of the TiO2 nanotubes. Thanks to the control of the morphology of the Ag nanoparticles, their plasmonic resonance can enhance the absorption of TiO2 and thus increase its activity both under UV and visible light.

Submitted by Mery Piedad Zamudio Igami (mery@ipen.br) on 2017-03-10T14:37:28Z No. of bitstreams: 1 22056.pdf: 6258956 bytes, checksum: 5b6bd2c4bc8c6f66cd739d2ef10fe810 (MD5) / Made available in DSpace on 2017-03-10T14:37:28Z (GMT). No. of bitstreams: 1 22056.pdf: 6258956 bytes, checksum: 5b6bd2c4bc8c6f66cd739d2ef10fe810 (MD5) / A soldagem por fricção (Friction Stir Welding - FSW) é um processo eficiente de unir ligas de alumínio de alta resistência evitando defeitos que são usualmente criados quando técnicas convencionais de soldagem são utilizadas. A indústria aeronáutica tem mostrado grande interesse neste método de soldagem, tanto para a união de ligas similares como dissimilares. Entretanto, este processo causa modificações microestruturais dependentes das condições de tratamento térmico ou termomecânico. Contato elétrico entre zonas de microestruturas diferentes, por sua vez, pode resultar em acoplamento galvânico. No presente estudo, a soldagem por FSW foi usada para unir duas ligas de alumínio dissimilares, AA2024-T3 e AA7475-T651 e o efeito desta soldagem na resistência à corrosão das juntas soldadas e na microestrutura das ligas foi avaliada. Na investigação da resistência à corrosão foram utilizados ensaios eletroquímicos, especificamente, medidas de potencial de circuito aberto (OCP) em função do tempo de exposição ao meio corrosivo, ensaios de polarização e de espectroscopia de impedância eletroquímica, global (EIS) ou local (LEIS), em duas soluções, seja 0,1 M Na2SO4 ou 0,1 M Na2SO4 + 1 mM NaCl. Os ensaios eletroquímicos evidenciaram efeito de acoplamento galvânico nas juntas soldadas. A caracterização microestrutural foi realizada por microscopia ótica, microscopia eletrônica de varredura, microscopia eletrônica de transmissão e por calorimetria diferencial. As zonas afetadas pela solda tiveram importantes modificações na microestrutura indicadas pela precipitação e dissolução de precipitados que afetam a resistência à corrosão localizada. A resistência à corrosão intergranular e a resistência à esfoliação das juntas soldadas também foram avaliadas e comparadas com as das ligas AA2024-T3 e AA7475-T651 não soldadas. Os resultados mostraram aumento da suscetibilidade das juntas soldadas a estas formas de corrosão em comparação com as ligas não soldadas sendo observado ataque mais severo na liga AA7475-T651. A identificação das áreas anódicas e catódicas resultantes do acoplamento galvânico nas juntas soldadas foi realizada por teste que consistiu na deposição de camada de gel (ágar-ágar) com indicador universal na superfície das ligas soldadas. A liga AA2024-T3 atuou como cátodo, enquanto a AA7475-T651, como ânodo no par galvânico. Além disso, evolução de hidrogênio foi observada na região de interface entre a zona termomecanicamente afetada e a termicamente afetada da liga AA7475-T651 mostrando que reações catódicas também ocorreram localmente nesta última liga. Resultados de LEIS obtidos nas diferentes zonas das duas ligas soldadas por FSW mostraram acoplamento galvânico na interface entre elas para tempos curtos de ensaio e deslocamento da região mais ativa com o tempo de ensaio para a liga AA7475-T651, mais precisamente para a interface entre a zona termomecanicamente afetada e a térmicamente afetada desta liga. / Tese (Doutorado em Tecnologia Nuclear ) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

<div>Self-assembled templates allow the creation of many complex arrays of nanostructures, which would be extremely difficult and expensive, if not impossible, to realize using any of the other available fabrication techniques. The complexity of these advanced nanostructures, synthesized using the various template assisted electrodeposition techniques, can be controlled to nanometer scale range by tuning the structural properties of the template, which is achieved by adjusting its various growth parameters during the self-assembly process.</div><div>Electrodeposition allows the creation of arrays of various metallic and semiconducting nanostructures. Monitoring the electrodeposition conditions permit the creation of single crystalline nanostructures of a particular material, or the formation of heterostructures using multiple electrodeposition steps. This work demonstrates the template assisted electrodeposition of vertically aligned nanowire arrays, both straight and branched, of metals, and a direct bandgap, III-V semiconductor, indium antimonide (InSb), which has one of the smallest known bandgap of any material. The template assisted electrodeposition of metallic, and InSb inverse opal (IO) structures is also shown, and the fabrication of a novel zipper shaped nanostructure by laser photomodification of a Ni IO structure is reported.</div><div>The optical characterization of the various nanostructures realized in this work have been examined. The results from this work confirm the ability to tune the optical spectra of nanostructures of the same material with similar volume fill fractions by structural modulation, where the different optical responses can be attributed to the structural differences of the actual structure as opposed to the material properties of the solid.</div>

Объект исследования – анодированный диоксид циркония. Цель работы – электрохимический синтез нанотубулярных структур диоксида циркония и исследование их люминесцентных и абсорбционных свойств. Методы исследования – растровая электронная микроскопия, рентгенофазовый анализ, абсорбционная и фотолюминесцентная спектроскопия. Новизна работы – исследована фотолюминесценция анодированного диоксида циркония в диапазоне температур 6.2-700 К. Показано, что интенсивность свечения в области 375 – 600 нм возрастает с уменьшением температуры до 30 К. Спектры свечения описываются двумя пиками гауссовой формы с максимумами Emax = 2.28 и 2.75 эВ и полуширинами ω = 0.77 и 0.67 эВ, соответственно. Измерены спектры диффузного отражения образцов до и после отжига. Посредством построения Тауца рассчитана энергия края оптического поглощения нанотубулярного диоксида циркония Eg = 5.4 ± 0.1 эВ. Возможная область применения анодированного диоксида циркония – матрицы солнечных батарей и фотокатализаторы. / The object of investigation is anodized zirconia. The aim of the work is the electrochemical synthesis of nanotubular zirconia structures and the study of their luminescence and absorption properties. The methods of investigation are scanning electron microscopy, X-ray phase analysis, absorption and photoluminescence spectroscopy. The novelty of the work is the photoluminescence of anodized zirconia in the temperature range of 6.2-700 K. It is shown that the luminescence intensity increases with decreasing temperature to 30 K. The emission spectra are described by two peaks of a Gaussian shape with maxima Emax = 2.28 and 2.75 eV and halfwidths ω = 0.77 and 0.67 eV, respectively. A possible field of application of anodized zirconia is the matrix of solar cells and photocatalysts. Spectra of diffuse reflection of samples before and after annealing were measured. By means of the Tauc plot, the energy of the edge of the optical absorption of nanotubular zirconium dioxide Eg = 5.4 ± 0.1 eV is calculated. A possible field of application of anodized zirconia is the matrix of solar cells and photocatalysts.

Синтезированы мемристорные сэндвич-структуры Zr/ZrO2-nt/Au диаметром 140 мкм на основе нанотубулярного слоя диоксида циркония толщиной 1.7 мкм и внутренним диаметром нанотрубок 55 нм. Проведена аттестация образцов методами сканирующей электронной и конфокальной микроскопии. Исследованы вольт-амперные характеристики полученных устройств в статическом и импульсном режимах резистивного переключения. Определены параметры резистивного переключения. Установлены механизмы проводимости, доминирующие в различных состояниях структуры. Продемонстрирована возможность формирования квантовых филаментов, состоящих из кислородных вакансий, в оксидном слое. Показана перспективность применения данных структур в качестве мемристорных элементов памяти. / Memristor Zr/ZrO2-nt/Au structure based on the zirconium oxide nanotubular layer with the thickness of 1.7 μm and the nanotubes inner diameter of 55 nm was synthesized. Attestation of the samples was performed with the methods of scanning electron and confocal microscopy. Current-voltage curves of the fabricated devices in static and pulsed modes of resistance switching were studied. Conduction mechanisms that dominate in different structure states were established. The formation of quantum filaments which consist of oxygen vacancies was shown to be possible in the oxide layer. The perspective of using these structures as memristor memory elements was shown.

Diploma thesis deals of nanostructured surfaces, nanoparticles and electrochemical characterization methods such as cyclic voltammetry, differential pulse voltammetry and electrochemical impedance spectroscopy. The aim of this thesis is a theoretical research issues of production and characterization nanostructured modified electrodes. The practical part is the production of biomodified nanostructured electrodes by anodi- zation W/Al layers with galvanic deposition of gold or deposition of mercury, a modifi- cation of the electrodes by 11-mercaptoundecanoic acid and by bovine serum albumin (BSA). The thesis includes SEM images of nanostructured electrodes contact angle mea- surements of these electrodes and form an electrical circuit with subsequent simulation waveforms.

Au vu des limitations rencontrées par la miniaturisation des circuits microélectroniques, l’augmentation de performances des systèmes repose largement aujourd’hui sur la fabrication d’empilements de couches minces complexes et innovants pour offrir davantage de compacité et de flexibilité. L’intérêt grandissant pour la réalisation de structures innovantes temporaires, i.e. permettant de réaliser des circuits sur les deux faces d’un même film, nous a mené à évaluer les potentialités d’une technologie combinant le transfert de films minces monocristallins, i.e. la technologie Smart Cut™, et un procédé de de porosification partielle du silicium afin de mettre au point une technologie de double report de film monocristallin. En ce sens, des substrats de silicium monocristallin ont été partiellement porosifiés par anodisation électrochimique. La mise en œuvre de traitements de substrats partiellement poreux a nécessité l’emploi de techniques de caractérisation variées pour dresser une fiche d’identité des couches minces poreuses après anodisation et évaluer l’évolution des propriétés de ces couches en fonction des différents traitements appliqués. Les propriétés chimiques, structurales et mécaniques des couches de Si poreux ont ainsi été étudiées via l’utilisation de différentes techniques de caractérisation (XPS-SIMS, AFM-MEB-XRD, nanoindentation, technique d’insertion de lame, etc.). Ces études ont permis d’appréhender et de décrire les mécanismes physiques mis au jeu au cours des différents traitements et de déterminer les caractéristiques {porosité, épaisseur} optimales des couches poreuses compatibles avec les séquences de la technologie proposée. La technologie Smart Cut™ a ainsi été appliquée à des substrats partiellement porosifiés menant à la fabrication réussie d’une structure temporaire de type Silicium-sur-Isolant avec une couche de silicium poreux enterrée. Ces structures temporaires ont été « démontées » dans un second temps par collage polymère ou collage direct et insertion de lame menant au second report de film mince monocristallin par rupture au sein de la couche porosifiée et donc fragile. Les structures fabriquées ont été caractérisées pour vérifier leur intégrité et leurs stabilités chimique et mécanique. Les propriétés cristallines du film mince de Si monocristallin, reporté en deux temps, ont été vérifiées confirmant ainsi la compatibilité des structures fabriquées avec des applications microélectroniques telles que les applications de type « Back-Side Imager » nécessitant une implémentation de composants sur les deux faces du film. Ainsi une technologie prometteuse et performante a pu être élaborée permettant le double report de films minces monocristallins et à fort potentiel pour des applications variées comme les imageurs visibles ou le photovoltaïque. / As scaling of microelectronic devices is confronted from now to fundamental limits, improving microelectronic systems performances is largely based nowadays on complex and innovative stack realization to offer more compaction and flexibility to structures. Growing interest in the fabrication of innovative temporary structures, allowing for example double sided layer processing, lead us to investigate the capability to combine one technology of thin single crystalline layer transfer, i.e. the Smart Cut™ technology, and partial porosification of silicon substrate in order to develop an original double layer transfer technology of thin single crystalline silicon film. To this purpose, single crystalline silicon substrates were first partially porosified by electrochemical anodization. Application of suitable treatments of porous silicon layer has required the use of several characterization methods to identify intrinsic porous silicon properties after anodization and to verify their evolution as function of different applied treatments. Chemical, structural and mechanical properties of porous silicon layers were studied by using different characterization techniques (XPS-SIMS, AFM-MEB-XRD, nanoindentation, razor blade insertion, etc.). Such studies allowed comprehending and describing physical mechanisms occurring during each applied technological steps and well determining appropriated {porosity, thickness} parameters of porous silicon layer with the developed technological process flow. The Smart Cut™ technology was successfully applied to partially porosified silicon substrates leading to the fabrication of temporary SOI-like structures with a weak embedded porous Si layer. Such structures were then “dismantled” thanks to a second polymer or direct bonding and razor blade insertion to produce a mechanical rupture through the fragile embedded porous silicon layer and to get the second thin silicon film transfer. Each fabricated structure was characterized step by step to check its integrity and its chemical and mechanical stabilities. Crystalline properties of the double transferred silicon layer were verified demonstrating the compatibility of such structures with microelectronic applications such as “Back-Side Imagers” needing double-sided layer processing. Eventually, a promising and efficient technology has been developed to allow the double transfer of thin single crystalline silicon layer which presents a high potential for various applications such as visible imagers or photovoltaic systems.