In recent years, two-dimensional (2D) van der Waals (vdW) materials have aroused much interest for their unique structural, thermal, optical, and electronic properties and have become a hot topic in condensed matter physics and material science. Many research methods, including scanning tunneling microscopy (STM), transmission electron microscopy (TEM), optical and transport measurements, have been used to investigate these unique properties. Among them, STM stands out as a powerful characterization tool with atomic resolution and is capable of simultaneously revealing both atomic structures and local electronic properties. This dissertation focuses on scanning tunneling microscopy and spectroscopy (STM/S) investigation of 2D metal chalcogenides and heterostructures. The first part of the dissertation focuses on the continuous interface in WS2/MoS2 heterostructures grown by the chemical vapor deposition (CVD) method. We observed a closed interface between the MoS2 monolayer and the heterobilayer with atomic resolution. Furthermore, our scanning tunneling spectroscopy (STS) results and density functional theory (DFT) calculations revealed band gaps of the heterobilayer and the MoS2 monolayer agree with previously reported values for MoS2 monolayer and MoS2/WS2 heterobilayer on SiO2 fabricated through the mechanical exfoliation method. The results could deepen our understanding of the growth mechanism, interlayer interactions and electronic structures of 2D transition metal dichalcogenides (TMD) heterostructures synthesized via CVD. The second part of the dissertation focuses on phase transformation in 2D In2Se3. We observed that 2D In2Se3 layers with thickness ranging from single to ~20 layers stabilized at the beta phase with a superstructure at room temperature. After cooling down to around 180 K, the beta phase converted to a more stable beta' phase that was distinct from previously reported phases in 2D In2Se3. The kinetics of the reversible thermally driven beta-to-beta' phase transformation was investigated by temperature dependent transmission electron microscopy and Raman spectroscopy, combined with the expected minimum-energy pathways obtained from our first-principles calculations. Furthermore, DFT calculations reveal in-plane ferroelectricity in the beta' phase. STS measurements show that the indirect bandgap of monolayer beta' In2Se3 is 2.50 eV, which is larger than that of the multilayer form with a measured value of 2.05 eV. Our results on the reversible thermally driven phase transformation in 2D In2Se3 will provide insights to tune the functionalities of 2D In2Se3 and other emerging 2D ferroelectric materials and shed light on their numerous potential applications like non-volatile memory devices. The third part of the dissertation focuses on domain boundaries in 2D ferroelectric In2Se3. The atomic structure of domain boundaries in two-dimensional (2D) ferroelectric beta' In2Se3 is visualized with scanning tunneling microscopy and spectroscopy (STM/S) combined with DFT calculations. A double-barrier energy potential across the 60° tail to tail domain boundaries in monolayer beta' In2Se3 is also revealed. The results will deepen our understanding of domain boundaries in 2D ferroelectric materials and stimulate innovative applications of these materials. / Doctor of Philosophy / Two-dimensional (2D) materials are materials consisting of a single layer or a few layers of atoms. They exhibit unique and interesting properties distinct from their bulk counterparts. Over the past decade, much effort has been devoted to a large family of 2D materials — 2D metal chalcogenides that exhibit fascinating structural and electronic properties. These 2D metal chalcogenides can also be stacked together to form various heterostructures. The scanning tunneling microscope (STM) is a powerful tool to study these materials with atomic resolution and is capable of simultaneously revealing both atomic structures and local electronic properties. It can also be used to manipulate nanometer-scale structures on the material surface. In this dissertation, we use scanning tunneling microscopy and spectroscopy (STM/S) to investigate 2D metal chalcogenides and heterostructures. The first part of the dissertation focuses on WS2/MoS2 heterostructures grown by the chemical vapor deposition (CVD) method. We observed a closed interface between the MoS2 monolayer and the heterobilayer with atomic resolution. Furthermore, our scanning tunneling spectroscopy (STS) results and density functional theory (DFT) calculations revealed band gaps of the heterobilayer and the MoS2 monolayer. The results could deepen our understanding of the growth mechanism, interlayer interactions and electronic structures of 2D transition metal dichalcogenides (TMD) heterostructures synthesized via CVD. The second part of the dissertation focuses on phase transformation in 2D In2Se3. We observed that 2D In2Se3 layers transform from beta phase to a more stable beta' phase when the sample is cooled down from room temperature to 77 K. This thermally driven beta-to-beta' phase transformation was found to be reversible by temperature dependent transmission electron microscopy and Raman spectroscopy, corroborated with the expected minimum-energy pathways obtained from our first-principles calculations. Furthermore, DFT calculations reveal in-plane ferroelectricity in the beta' phase. Our results on the reversible thermally driven phase transformation in 2D In2Se3 will provide insights to tune the functionalities of 2D In2Se3 and other emerging 2D ferroelectric materials. The third part of the dissertation focuses on domain boundaries in 2D ferroelectric In2Se3. The atomic structure of domain boundaries in 2D ferroelectric beta' In2Se3 is visualized by using STM/S combined with DFT calculations. A double-barrier energy potential across the 60° tail to tail domain boundaries in monolayer beta' In2Se3 is also revealed. The results will deepen our understanding of domain boundaries in 2D ferroelectric materials and stimulate innovative applications of these materials.

Submitted by ARMANDO ARQUIMEDES PEZO LOPEZ (armandopezo333@gmail.com) on 2017-09-15T18:49:05Z No. of bitstreams: 1 pezo_a_ms_ift.pdf: 7486652 bytes, checksum: 7101195a7ca026fe9e98885ba89961f1 (MD5) / Approved for entry into archive by Monique Sasaki (sayumi_sasaki@hotmail.com) on 2017-09-19T17:23:53Z (GMT) No. of bitstreams: 1 pezolopez_aa_me_ift.pdf: 7486652 bytes, checksum: 7101195a7ca026fe9e98885ba89961f1 (MD5) / Made available in DSpace on 2017-09-19T17:23:53Z (GMT). No. of bitstreams: 1 pezolopez_aa_me_ift.pdf: 7486652 bytes, checksum: 7101195a7ca026fe9e98885ba89961f1 (MD5) Previous issue date: 2016-08-02 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / A realização experimental do grafeno em 2004 abriu as portas para os estudos de uma nova geração de materiais, estes chamados materiais bidimensionais são a expressão final do que poderíamos pensar em material plano (monocamada) que, eventualmente, podem ser empilhados para formar o bulk. O grafeno oferece uma grande variedade de propriedades físicas, em grande parte, como o resultado da dimensionalidade de sua estrutura, e pelas mesmas razões, materiais como Fosforeno (P), Siliceno (S), Nitreto de Boro hexagonal (hBN), dicalcogenos de metais de transição (TMDC), etc. São muito interessantes para fins teóricos, como para futuras aplicações tecnológicas que podem-se desenvolver a partir deles, como dispositivos de spintrônica e armazenamento. Neste trabalho o estudo desenvolvido são as propriedades eletrônicas dos materiais apresentados acima (grafeno, fosforeno e MoTe 2 ), e além disso, ja que o acoplamento spin-órbita aumenta à medida que o número atômico tambem aumenta, espera-se que este parâmetro desempenhe um papel na estrutura eletrônica, particularmente para os TMDC’s. Começamos descrevendo genéricamente esses três sistemas, isto é, para o grafeno, podemos usar uma abordagem tipo tight binding, a fim de encontrar a dispersão de energia para as quase-particulas perto do nível de Fermi (Equação de Dirac). Usando cálculos DFT estudou-se de forma geral as propriedades desses sistemas com a inclusão do espin órbita. Abordou-se cálculos para descrever os efeitos do acoplo spin órbita sobre os materiais isolados, tambem nas heterostruturas (duas camadas formadas por eles). Finalmente, tambem estudou-se a possibilidade de defeitos e sua possível influência sobre a estrutura eletrônica das heterostruturas. / The experimental realization of graphene in 2004 opened the gates to the studies of a new generation of materials, these so-called 2 dimensional materials are the final expression of what we could think of a plane material (monolayer) that eventually can be stacked to form a bulk. Graphene, the wonder material, offers a large variety of physical properties, in great part, as the result of the dimensionality of its structure, and for the same reasons, materials like phosphorene(P), silicene(S), hexagonal Boron Nitride (hBN), transition metal dichalcogenides(TMDC), etc. are very interesting for theoretical purposes, as for the future technological applications that we can develope from them, such as Spintronics and Storage devices. In this dissertation we theoretically study the electronic properties of the materials presented above (graphene, Phosphorene and MoTe2), and besides that, since the spin-orbit coupling strength increases as the atomic number does, we expect that this paremeter plays a role in the electronic structure, particularly for the TMDC. We start describing generically those three systems using density functional theory including the effect of spin orbit. We address calculations to describe the effects of spin orbit on the isolated materials as well as the heterostructures. Finally we also include the possibility of defects in graphene and their possible influence on the electronic structure of heterostructures.

Thesis (PhD)--Stellenbosch University, 2013. / ENGLISH ABSTRACT: In this thesis the structural dynamics, upon photo-excitation, of the charge-densitywave (CDW) material 4Hb-TaSe2 is investigated on the time-scale of atomic motion and simultaneously on the spatial-scale of atomic dimensions. CDW materials have been of interest since their discovery in the 1970’s because of their remarkable non-linear and anisotropic electrical properties, gigantic dielectric constants, unusual elastic properties and rich dynamical behaviour. Some of these exotic properties were extensively investigated in thermal equilibrium soon after their discovery but only recently have ultrafast techniques like femtosecond spectroscopy become available to study their out-of-equilibrium behaviour on the time-scale of atomic motion. By studying their behaviour on this time-scale a more in-depth understanding of their macroscopic properties can be gained. However, to do investigations on the atomic time-scale and simultaneously directly observe the evolution of the atomic arrangements is another challenge. One approach is through the previously mentioned technique of femtosecond pump-probe spectroscopy but converting the usual ultrashort optical probing source to an ultrashort electron or x-ray source that can diffract off the sample and reveal structural detail on the atomic level. Here, the femto-to-picosecond out-of-equilibrium behaviour upon photo-excitation in 4Hb-TaSe2 is investigated using an ultrashort electron probe source. Two variations of using an electron probe source are used: conventional scanning Femtosecond Electron Diffraction (FED) and a new approach namely Femtosecond Streaked Electron Diffraction (FSED). The more established FED technique, based on femtosecond pumpprobe spectroscopy, is used as the major investigating tool while the FSED technique, based on ultrafast streak camera technology, is an attempt at broadening the scope of available techniques to study structural dynamics in crystalline material on the subpicosecond time-scale. With these two techniques, the structural dynamics during the phase transition from the commensurate- to incommensurate-CDW phase in 4Hb-TaSe2 is observed through diffraction patterns with a temporal resolution of under 500 fs. The study reveals strong coupling between the electronic and lattice systems of the material and several time-constants of under and above a picosecond are extracted from the data. Using these time-constants, the structural evolution during the phase transition is better understood and with the newly gained knowledge, a model of all the processes involved after photo-excitation is proposed. / AFRIKAANSE OPSOMMING: In hierdie tesis word die strukturele dinamika van die lading-digtheid-golf (LDG) materiaal 4Hb-TaSe2 ondersoek op die tydskaal van atomiese bewegings en gelyktydig op die ruimtelikeskaal van atomiese dimensies. LDG materie is al van belang sedert hul ontdekking in die 1970’s as gevolg van hul merkwaardige nie-lineêre en anisotrope elektriese eienskappe, reuse diëlektriese konstantes, ongewone elastiese eienskappe en ryk dinamiese gedrag. Sommige van hierdie eksotiese eienskappe is omvattend ondersoek in termiese ewewig kort na hul ontdekking, maar eers onlangs is dit moontlik deur middle van ultravinnige tegnieke soos femtosekonde spektroskopie om hulle uit-ewewigs gedrag te bestudeer op die tydskaal van atomiese beweging. Deur die gedrag op hierdie tydskaal te bestudeer kan ’n meer insiggewende begrip van hul makroskopiese eienskappe verkry word. Om ondersoeke in te stel op die atomiese tydskaal en gelyktydig direk die evolusie van die atoom posisie te waarneem is egter ’n moeilike taak. Een benadering is deur middle van femtosekonde “pump-probe” spektroskopie maar dan die gewone optiese “probe” puls om te skakel na ’n electron of x-straal puls wat van die materiaal kan diffrak en dus strukturele inligting op die atomiese vlak kan onthul. Hier word die femto-tot-pico sekonde uit-ewewig gedrag in 4Hb-TaSe2 ondersoek met behulp van elektron pulse. Twee variasies van die gebruik van ’n elektron bron word gebruik: konvensionele “Femtosecond Electron Diffraction” (FED) en ’n nuwe benadering, naamlik, “Femtosecond Streaked Electron Diffraction” (FSED). Die meer gevestigde FED tegniek, wat gebaseer is op femtosekonde “pump-probe” spektroskopie, word gebruik as die hoof ondersoek metode terwyl die FSED tegniek, wat gebaseer is op die ultra vinnige “streak camera” tegnologie, ’n poging is om beskikbare tegnieke uit te brei wat gebruik kan word om strukturele dinamika in materie te bestudeer op die sub-picosekonde tydskaal. Met behulp van hierdie twee tegnieke, word die strukturele dinamika tydens die fase oorgang van die ooreenkomstige tot nie-ooreenkomstige LDG fase in 4Hb-TaSe2 deur diffraksie patrone met ’n tydresolusie van minder as 500 fs waargeneem. Die studie toon ’n sterk korrelasie tussen die elektroniese sisteem en kristalrooster. Verskeie tydkonstantes van onder en bo ’n picosekonde kon ook uit die data onttrek word en gebruik word om die strukturele veranderinge beter te verstaan. Hierdie nuwe kennis het ons in staat gestel om ’n model van al die betrokke prosesse voor te stel.

abstract: Early detection and treatment of disease is paramount for improving human health and wellness. Micro-scale devices promote new opportunities for the rapid, cost-effective, and accurate identification of altered biological states indicative of disease early-onset; these devices function at a scale more sensitive to numerous biological processes. The application of Micro-Electro-Mechanical Systems (MEMS) in biomedical settings has recently emerged and flourished over course of the last two decades, requiring a deep understanding of material biocompatibility, biosensing sensitively/selectively, biological constraints for artificial tissue/organ replacement, and the regulations in place to ensure device safety. Capitalizing on the inherent physical differences between cancerous and healthy cells, our ultra-thin silicone membrane enables earlier identification of bladder cancer—with a 70% recurrence rate. Building on this breakthrough, we have devised an array to multiplex this sample-analysis in real-time as well as expanding beyond bladder cancer. The introduction of new materials—with novel properties—to augment current and create innovative medical implants requires the careful analysis of material impact on cellular toxicity, mutagenicity, reactivity, and stability. Finally, the achievement of replacing defective biological systems with implanted artificial equivalents that must function within the same biological constraints, have consistent reliability, and ultimately show the promise of improving human health as demonstrated by our hydrogel check valve. The ongoing proliferation, expanding prevalence, and persistent improvement in MEMS devices through greater sensitivity, specificity, and integration with biological processes will undoubtedly bolster medical science with novel MEMS-based diagnostics and therapeutics. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2018

No description available.

<p>Tuning the structural and electronic properties of layered materials is critical for the development of thin, flexible semiconductors that are capable of overcoming Moore’s law. Intercalation of transition metals (TMs) into the interlayer gaps of a two-dimensional host material is one of the most promising methods toward modifying the electronic properties without disrupting the chemical bonds within the layers. Previous studies have shown that the intercalation of TMs into Bi2Se3, SnS2, TaS2, and NbS2 altered the electronic, optical, and magnetic properties of the material due to orbital hybridization between the d-orbitals of the intercalant and the bands of the host material. However, the synthesis of intercalated 2D materials using compositionally-limited because the process is driven by a charge transfer reaction from the intercalant to the conduction band of the host material, which is difficult to achieve on group VI TMDs (MoS2, WS2) with high energy conduction bands. As a result, only metal atoms that are highly reducing, like alkali metals, can be effectively intercalated into WS2. Meanwhile, alkali metal-intercalated WS2 materials are unstable under ambient conditions, which significantly limits further device application. In this dissertation, we developed a solution-phase synthetic method to successfully intercalate a broad range of redox-active TM cations into WS2 and access a variety of intercalation morphologies. With these different intercalated structures, the electronic properties of WS2 can be systematically adjusted.</p> <p>First, we synthesized vanadium-intercalated WS2, and structural characterization reveals that solvated vanadium cations are uniformly intercalated in WS2, which significantly increases the interlayer spacing from 6.2 Å to 14.2 Å. Raman and X-ray absorption spectroscopy (XAS) experiments indicate a strong interaction between the vanadium intercalants and the WS2 basal plane. Electronic transport measurements show that the vanadium-intercalated WS2 is an n-type semiconductor with room-temperature conductivity of 12 S/cm, 2 orders of magnitude higher than pristine WS2. The electronic properties can be further tuned by varying the concentration of V intercalants.</p> <p>We further synthesized TM-intercalated WS2 using 17 different metal precursors, varying the identity, reduction potential, charge density, and ionic radius in order to determine the key properties that influence intercalation. With detailed structural characterization, we determined that both charge density and reduction potential of the precursor are critical toward achieving selective intercalation over secondary nucleation. The strength of the host-guest interaction is also dependent on the transition metal identity. With the strongest interaction between the TM intercalants and WS2 basal plane, FeCl3-WS2 has the lowest work function of 4.97 eV and the highest conductivity of 110 S/cm.</p>

The scanning tunneling microscope (STM) is one of the most advanced surface science tools capable of atomic resolution imaging and atomic manipulation. Unfortunately, STM has many time-consuming bottlenecks, like probe conditioning, tip instability, and noise artificing, which causes the technique to have low experimental throughput. This dissertation describes my efforts to address these challenges through automation and machine learning. It consists of two main sections each describing four projects for a total of eight studies. The first section details two studies on nanoscale sample fabrication and two studies on STM tip preparation. The first two studies describe the fabrication of graphene-based Josephson Junction devices and the factorial optimization of patterned carbon nanotube forest synthesis. The second two studies focus on the factorial optimization of electrochemical STM tip etching and automated STM tip functionalization via in-situ silicon nanocolumn growth. The second section details four studies on the use of neural networks for STM image and spectroscopy analysis. The third two studies are on the effectiveness of convolutional neural networks for identifying images of conditioned STM tips on the Au(111) surface and on the detection and metrology of atomic scale defects in single crystal tungsten diselenide, a transition metal dichalcogenide. The fourth two studies are on the use of variational autoencoders to autonomously classify scanning tunneling spectra of various materials, molecules, and surface structures and to identify bismuth and nickel atoms from cross sectional STM images of doped gallium arsenide.

The interplay between different self-organized electronically ordered states and their relation to unconventional electronic properties like superconductivity constitutes one of the most exciting challenges of modern condensed matter physics. In the present thesis this issue is thoroughly investigated for the prototypical layered material 1T-TaS2 both experimentally and theoretically. At first the static charge density wave order in 1T-TaS2 is investigated as a function of pressure and temperature by means of X-ray diffraction. These data indeed reveal that the superconductivity in this material coexists with an inhomogeneous charge density wave on a macroscopic scale in real space. This result is fundamentally different from a previously proposed separation of superconducting and insulating regions in real space. Furthermore, the X-ray diffraction data uncover the important role of interlayer correlations in 1T-TaS2. Based on the detailed insights into the charge density wave structure obtained by the X-ray diffraction experiments, density functional theory models are deduced in order to describe the electronic structure of 1T-TaS2 in the second part of this thesis. As opposed to most previous studies, these calculations take the three-dimensional character of the charge density wave into account. Indeed the electronic structure calculations uncover complex orbital textures, which are interwoven with the charge density wave order and cause dramatic differences in the electronic structure depending on the alignment of the orbitals between neighboring layers. Furthermore, it is demonstrated that these orbital-mediated effects provide a route to drive semiconductor-to-metal transitions with technologically pertinent gaps and on ultrafast timescales. These results are particularly relevant for the ongoing development of novel, miniaturized and ultrafast devices based on layered transition metal dichalcogenides. The discovery of orbital textures also helps to explain a number of long-standing puzzles concerning the electronic self-organization in 1T-TaS2 : the ultrafast response to optical excitations, the high sensitivity to pressure as well as a mysterious commensurate phase that is commonly thought to be a special phase a so-called “Mott phase” and that is not found in any other isostructural modification.

The ability to convert photons into mechanical motion is of significant importance for many energy conversion and reconfigurable technologies. Establishing an optical-mechanical interface has been attempted since 1881; nevertheless, only few materials exist that can convert photons of different wavelengths into mechanical motion that is large enough for practical import. Recently, various nanomaterials including nanoparticles, nanowires, carbon nanotubes, and graphene have been used as photo-thermal agents in different polymer systems and triggered using near infrared (NIR) light for photo-thermal actuation. In general, most photomechanical actuators based on sp bonded carbon namely nanotube and graphene are triggered mainly using near infra-red light and they do not exhibit wavelength selectivity. Layered transition metal dichalcogenides (TMDs) provide intriguing opportunities to develop low cost, light and wavelength tunable stimuli responsive systems that are not possible with their conventional macroscopic counterparts. Compared to graphene, which is just a layer of carbon atoms and has no bandgap, TMDs are stacks of triple layers with transition metal layer between two chalcogen layers and they also possess an intrinsic bandgap. While the atoms within the layers are chemically bonded using covalent bonds, the triple layers can be mechanically/chemically exfoliated due to weak van der Waals bonding between the layers. Due to the large optical absorption in these materials, they are already being exploited for photocatalytic, photoluminescence, photo-transistors, and solar cell applications. The large breaking strength together with large band gap and strong light- matter interaction in these materials have resulted in plethora of investigation on electronic, optical and magnetic properties of such layered ultra-thin semiconductors. This dissertation will go in depth in the synthesis, characterization, development, and application of two- dimensional (2D) nanomaterials, with an emphasis on TMDs and molybdenum disulfide (MoS2), when used as photo-thermal agents in photoactuation technologies. It will present a new class of photo-thermal actuators based on TMDs and hyperelastic elastomers with large opto-mechanical energy conversion, and investigate the layer-dependent optoelectronics and light-matter interaction in these nanomaterials and nanocomposites. Different attributes of semiconductive nanoparticles will be studied through different applications, and the possibility of globally/locally engineering the bandgap of such nanomaterials, along with its consequent effect on optomechanical properties of photo thermal actuators will be investigated. Using liquid phase exfoliation in deionized water, inks based on 2D- materials will be developed, and inkjet printing of 2D materials will be utilized as an efficient method for fast fabrication of functional devices based on nanomaterials, such as paper-graphene-based photo actuators. The scalability, simplicity, biocompatibility, and fast fabrication characteristics of the inkjet printing of 2D materials along with its applicability to a variety of substrates such as plastics and papers can potentially be implemented to fabricate high-performance devices with countless applications in soft robotics, wearable technologies, flexible electronics and optoelectronics, bio- sensing, photovoltaics, artificial skins/muscles, transparent displays and photo-detectors.

Les liquides ioniques sont des fluides non volatiles, constitués de cations et d’anions, qui sont conducteurs ioniques, isolants électriques, et peuvent avoir des valeurs de capacité très élevées. Ces liquides sont susceptibles non seulement de remplacer les électrolytes solides, mais également de susciter des champs électriques intenses (>SI{10}{megavoltpercentimetre}) au sein d’une couche dite double couche électronique (electric double layer, EDL) à l’interface entre le liquide et le matériau sur lequel il est déposé. Ceci conduit à une injection de porteurs de charge bidimensionelle avec des densités allant jusqu’à SI{e15}{cm^{-2}}. Cet effet de grille remarquablement fort des liquides ioniques est réduit en présence d’états piégés ou de rugosité de surface. À cet égard, les dicalchogénures de métaux de transitions, de très haute qualité cristalline et atomiquement plats, font partis des semi-conducteurs les plus adaptés aux grilles EDL.Nous avons réalisé des transistors à effet de champ avec des EDL dans des nanotubes multi-couches de ce{WS2}, avec des performances comparables à celles de transistors EDL sur des ilots de ce{WS2}, et meilleurs que celles de nanotubes de ce{WS2} avec une grille solide. Nous avons obtenu des mobilités allant jusqu’à SI{80}{squarecentimetrepervoltpersecond} pour les porteurs n et p, et des ratios de courants on/off dépassant SI{e5}{} pour les deux polarités. Pour de forts dopages de type électron, les nanotubes ont un comportement métallique jusqu’à basse température. De plus, utiliser un liquide ionique permet de créer une jonction pn de manière purement électrostatique. En prenant avantage de cet effet, nous avons pu réaliser un transistor photoluminescent dans un nanotube.La possibilité de susciter de très forte densités de charges donne la possibilité d’induire des phases métalliques ou supraconductrices dans des semi-conducteurs a large bande interdite. Nous avons ainsi réussi à induire par effet de champ une phase métallique à basse température dans du diamant intrinsèque avec une surface hydrogénée, et nous avons obtenu un effet de champ dans du silicone dopé métallique.Les liquides ioniques offrent beaucoup d’avantages, mais leur champ d’application est encore réduit par l’instabilité du liquide, ainsi que par les courants de fuites et l’absorption graduelle d’impuretés. Un moyen efficace de s’affranchir de ces inconvénients, tout en conservant la possibilité d’induire de très fortes densités de porteurs, est de gélifier le liquide ionique. Nous sommes allés plus loin en fabriquant des gels ioniques modifiés, avec les cations fixés sur une seule surface et les anions libres de se mouvoir au sein du gel. Cet outil nous a permis de réaliser une nouvelle diode à effet de champ de faible puissance. / Ionic liquids are non-volatile fluids, consisting of cations and anions, which are ionically conducting and electrically insulating and hold very high capacitances. These liquids have the ability to not only to replace solid electrolytes, but to create strongly increased electric fields (>SI{10}{megavoltpercentimetre}) in the so-called electric double layer (EDL) on the electrolyte/channel interface, which leads to the injection of 2D charge carrier densities up to SI{e15}{cm^{-2}}. The remarkably strong gate effect of ionic liquids is diminished in the presence of trapped states and roughness-induced surface disorder, which points out that atomically flat transition metal dichalcogenides of high crystal quality are some of the semiconductors best suited for EDL-gating.We realised EDL-gated field-effect transistors based on multi-walled ce{WS2} nanotubes with operation performance comparable to that of EDL-gated thin flakes of the same material and superior to the performance of backgated ce{WS2} nanotubes. For instance, we observed mobilities of up to SI{80}{squarecentimetrepervoltpersecond} for both p- and n-type charge carriers and our current on-off ratios exceed SI{e5}{} for both polarities. At high electron doping levels, the nanotubes show metallic behaviour down to low temperatures. The use of an electrolyte as topgate dielectric allows the purely electrostatic formation of a pn-junction. We successfully fabricated a light-emitting transistor taking advantage of this utility.The ability of high charge carrier doping suggests an electrostatically induced metal phase or superconductivity in large gap semiconductors. We successfully induced low temperature metallic conduction into intrinsic diamond with hydrogen-terminated surface via field-effect and we observed a gate effect in doped, metallic silicon.Ionic liquids have many advantageous properties, but their applicability suffers from the instability of their liquid body, gate leakage currents and absorption of impurities. An effective way to bypass most of these problems, while keeping the ability of ultra-high charge carrier injection, is the gelation of ionic liquids. We even went one step further and fabricated modified ion gel films with the cations fixed on one surface and the anions able to move freely through the film. With this tool, we realised a novel low-power field-effect diode.