<p>The task of the project was to evaluate a differential phase shift keying demodulation technique by replacing a Mach-Zehnder interferometer receiver with an optical filter (Fiber Bragg Grating). Computer simulations were made with single optical transmission, multi channel systems and transmission with combined angle/intensity modulated optical signals. The simulations showed good results at both 10 and 40 Gbit/s. Laboratory experiments were made at 10 Gbit/s to verify the simulation results. It was found that the demodulation technique worked, but not with satisfactory experimental results. The work was performed at Eindhoven University of Technology, Holland, within the framework of the STOLAS project at the department of Electro-optical communication.</p>

The task of the project was to evaluate a differential phase shift keying demodulation technique by replacing a Mach-Zehnder interferometer receiver with an optical filter (Fiber Bragg Grating). Computer simulations were made with single optical transmission, multi channel systems and transmission with combined angle/intensity modulated optical signals. The simulations showed good results at both 10 and 40 Gbit/s. Laboratory experiments were made at 10 Gbit/s to verify the simulation results. It was found that the demodulation technique worked, but not with satisfactory experimental results. The work was performed at Eindhoven University of Technology, Holland, within the framework of the STOLAS project at the department of Electro-optical communication.

Ce travail porte sur la conception, la fabrication et la caractérisation de lentilles planaires nano-structurées dédiées aux capteurs d’images CMOS dans le proche-infrarouge. L’étude des applications et des systèmes d’imagerie optronique mis en jeu ont mis en évidence l’intérêt de l’utilisation des capteurs d’images CMOS dans la bande 800-1100 nm. Les inconvénients liés au silicium et à la structure du pixel justifient l’intégration de lentilles planaires nano-structurées compatibles avec le procédé de fabrication CMOS : une lentille plasmonique, une lentille diffractive métallique dite de Huygens, une lentille diélectrique dite de phase de Fresnel et une lentille à gradient d’indice effectif. Les simulationsélectromagnétiques 2D d’un pixel CMOS complet avec chaque lentille planaire ont démontré l’intérêt de la lentille métallique dans un pixel à faible facteur de remplissage et de la lentille de phase de Fresnel pour un pixel standard. Les simulations électromagnétiques 3D ont permis la conception de ces deux dernières lentilles pour leur fabrication tandis que la lentille à gradient d’indice effectif, susceptible d’approcher le profil de phase idéal, a montré son potentiel pour les pixels CMOS. La caractérisation électro-optique a mis en évidence la performance expérimentale de la lentille de phase de Fresnel fabriquée en "post-process" au LPN-CNRS et de la lentille de Huygens fabriquée "in-process" en fonderie CMOS. Les nombreuses perspectives de ce travail liés à la fabrication et à la marge de progression des lentilles ont été explorées. / This work deals with the design, fabrication and characterization of nanostructuredplanar lenses dedicated to near infrared detection for CMOS image sensors.Applications and optronic systems involved in near infrared imaging have been investigatedin order to highlight the strong interest of CMOS images sensors for the 800-1100 nmspectral band. Limitations of silicon and pixel structure explain the integration of nanostructuredplanar lenses compatible with CMOS fabrication process : a plasmonic lens, a dielectricphase-Fresnel lens, a metallic Huygens lens and a gradient-index lens. 2D electromagneticsimulations of a CMOS pixel with each planar lens have demonstrated the good performanceof the Huygens lens for low fill factor pixels and the phase-Fresnel lens for standard pixels.3D simulations of these lenses have been performed for their integration and fabrication inCMOS image sensors. The 3D design by numerical simulations of a gradient-index lens hasshown its potential interest for CMOS pixels. The experimental performance of a dielectriclens "post-process" integrated/fabricated at LPN-CNRS and a metallic lens "in-process" by aCMOS foundy have been evaluated by electro-optical characterization. Several perspectivesof this work about lens fabrication and potential for improvement have been explored.

Neste trabalho foram projetados, fabricados e caracterizados funcionalmente dispositivos eletroluminescentes empregando complexos de Terras Raras (TR) e de Metais de Transição (MT) tanto como em filmes finos termicamente evaporados quanto formados através da técnica de spin-coating. O estudo foi iniciado com os complexos de TRs (especificamente o complexo de Európio e de Térbio) com filmes termicamente evaporados, com vistas à análise da eficiência externa dos dispositivos em função do ligante principal (CL). Desta análise observou-se que a particular estrutura química do CL resulta em diferenças perceptíveis ao nível da caracterização eletro-óptica (de 0,73x10-3 [BTA] para 1,05x10-3 [DBM]). Dando seqüência à análise de dispositivo com camada emissiva termicamente evaporada, foi realizada a análise do complexo de Térbio com dois tipos de ligante neutro (NL). Com base nos resultados obtidos, neste foco do estudo, observou-se que a configuração estrutural do NL implica em diferenças na eficiência externa (de 0,8x10-3 [PHEN] para 4,1x10- 3 [BIPY]) e no comprimento de onda dominante emitido (de 542 nm [BIPY] para 563 [PHEN]). Ainda explorando os complexos de TRs, foram estudados dispositivos empregando estes dispersos em um polímero com função de matriz, neste caso o polivinilcarbazol (PVK), em filmes formados por spin-coating, os quais apresentaram maior eficiência (de 0,72x10-3 [evaporado] para 1,24x10-3 [spincoating]) externa em comparação aos termicamente evaporados. Ainda nesta linha de estudo foi explorada uma nova estrutura de dispositivo empregando filmes automontados, cujos resultados apresentaram uma melhor eficiência externa para três bicamadas de PAni/PEDOT:PSS. Na seqüência, foram empregados os complexos de MT, especificamente de Rutênio e de Rênio, em filmes finos formados por spincoating. Com o primeiro destes, foi avaliada a conseqüência da variação do seu ligante, seus processos de transporte de portadores de carga e os fenômenos relacionados com sua luminescência. Já com o segundo, que foi disperso em PVK em diversas concentrações, foi feita a análise da eficiência externa com a mesma idéia adotada com o complexo de Európio, cujo estudo revelou uma eficiente transferência de energia, descrita pelo mecanismo de Transferência de Carga Metal- Ligante (3MLCT). / This work presents the study of the Rare Earth (RE) and Transition Metals (TM) complexes, as emissive layers of Organic Light-Emitting Devices (OLEDs) designed, built and electro-optically characterized. The thin films were thermally evaporated or spin-coated. This research started with the study of Europium complex changing its central ligand (CL), which showed that its electrical response exhibits external efficiency differences (from 0.73x10-3 [BTA] to 1.05x10-3 [DBM]). It was observed that the particular chemical structure of the CL results in significant differences as seen in the electro-optical characterization. Giving continuity to the thermally evaporated device characterization, an analysis was done with the Terbium complexes with two different neutral ligands (NL). It was noticed, in this work, that an NL change in Terbium complex imply in changes in external efficiency (from 0.8x10-3 [PHEN] to 4.1x10-3 [BIPY]) and in the emitted dominant wavelength (from 542 nm [BIPY] to 563 nm [PHEN]). Following the study using RE complex, we used it as a dye dispersed in polyvinylcarbazole (PVK) matrix, in a spin-coated deposited thin-film, which results showed a better external efficiency in comparison with thermally evaporated thin-films (from 0.72x10-3 [thermal evaporation] to 1.24x10-3 [spin-coating]). Besides, it was studied a new structure of electroluminescent device with thin-film Self-Assembled deposition, which results showed a better external efficiency for three bilayers of PAni/PEDOT:PSS. In the sequence, TM complexes, namely Ruthenium and Rhenium, were studied using spincoated thin-films. With the first of them, the implications of different ligands (bipyridyne and phenanthroline) were evaluated aiming the charge carrier transport and the luminescence related phenomena. The Rhenium complex was dispersed as a dye in the PVK, using the same approach as that used to study the Europium complex showing a very efficient energy transfer process, described in literature as the Metal-Ligand Charge Transfer (3MLCT) mechanism.

Ces travaux de thèse ont pour objectif de proposer une nouvelle technique de caractérisation électro-optique de barrettes de diodes Laser de puissance (DLPs), au niveau émetteur individuel à partir d'un banc dédié, utilisées pour le pompage optique à 808nm de système LIDAR en environnement spatial et en régime QCW. Après une étude métrologique fine, ils décrivent une méthodologie de sélection d'un indicateur précoce de défaillance potentielle et sa capacité à estimer la fiabilité de DLPs en conditions opérationnelles (> 109 impulsions à 100Hz/200µs). L’analyse de la dégradation des DLPs se base sur l'identification de signatures paramétriques de défaillance mises en lumière après une série de tests accélérés ciblés et relatives à l'évolution de la puissance optique, du spectre optique (λmax) et du degré de polarisation (DOP) de chaque émetteur de la barrette. Nous montrons également la forte complémentarité entre la mesure du DOP par électroluminescence et par photoluminescence et nous proposons une méthodologie de sélection précoce des émetteurs en considérant leur localisation dans le plan (λmax, DOP). Ces études expérimentales, confortées par des simulations thermiques et mécaniques par éléments finis en introduisant un grand nombre de paramètres technologiques, ont permis de quantifier les niveaux de contraintes résiduelles dans les DLPs en fonction de différentes configurations d'assemblage et d'établir un lien avec leur fiabilité intrinsèque. / This thesis work aimed to propose a new methodology for electro-optical characterization ofQCW laser diodes array (LDA) at emitter level by using a dedicated test bench. After detailedmetrological study, a methodology for selecting an early failure indicator and its ability to assess theLDA reliability in operational conditions (> 109 Shots at 100Hz/200μs) has been described. The LDAdegradation analysis were based on identification of parametric failure signatures highlighted after aset of accelerated tests and have been focused on the evolution of optical power, optical spectrum(λmax) and the degree of polarization (DOP) of each emitter on the LDA. We also explain the strongcomplementarity between the measured DOP of photoluminescence and the DOP ofelectroluminescence and a methodology for early selection of emitters have been proposed by takinginto account their location in the plane (λmax, DOP). These experimental studies were comforted bythermal and mechanical finite element simulations, by introducing several technological parameters inorder to quantify levels of induced mechanical stresses in LDA under different assemblyconfigurations and to establish the link with their intrinsic reliability.

Le développement de systèmes IRM à plus haut champ magnétique statique s'est accompagné d'une interrogation légitime concernant l'effet des champs électromagnétiques RF sur les patients. L'effet peut être renforcé par l'introduction d'éléments conducteurs à l'intérieur de la bobine RF comme c'est le cas pour les capteurs endoluminaux utilisés pour l'analyse des parois digestives. Ces capteurs entraînent des risques d'échauffements locaux élevés pour le patient en raison du TAS local induit par le champ électrique RF en présence d'un fil conducteur. Ces capteurs ayant le potentiel de présenter un bénéfice pour le patient, il est nécessaire de s'affranchir de ces limitations. Le premier objectif de la thèse est le développement d'un capteur endoluminal à liaisons optiques. Un dispositif de découplage actif optique a été développé et caractérisé. Les images RMN in vitro montrent une distribution du RSB comparable au découplage classique, validant ainsi l'efficacité du découplage optique. Concernant la transmission optique du signal RMN, des travaux ont été réalisés afin de s'affranchir des contraintes liées à l'utilisation d'un guide d'onde pour la conversion électro-optique par effet Pockels. Le capteur a été rendu plus compact. En revanche, l'importance de contrôler le TAS local dans des conditions expérimentales données demeure un besoin ne s'arrêtant pas à ceux des capteurs endoluminaux. Le second objectif est donc la validation expérimentale d'une sonde électro-optique pour la mesure du champ électrique RF durant un examen IRM. Cette sonde a permis d'effectuer des mesures du champ électrique dans l'air et dans différents milieux biologiques à 3 T et 4,7 T et estimer le TAS local / The recent advancement in MRI systems and the increase of the static magnetic field strength were accompanied by a strong concern about the effect of RF electromagnetic fields on patients. The effect can be increased by the use of conductive elements inside the volume coil as in the case of endoluminal coils used to analyze digestive walls. These coils lead to an increase of the local SAR which is induced by RF electric field in the presence of the coaxial cable connecting the coil to the MR system, resulting in strong local heating. Giving that these coils have the potential to present a real benefit to the patient, it worth to overcome these limitations. Accordingly, the first objective of the thesis is the development of a fully optical endoluminal receiver coil. An optical active detuning system has been developed and characterized. The NMR images show a signal-to-noise ratio distribution similar to that obtained with conventional detuning techniques, thus validating the efficiency of the optical detuning. Concerning the electro-optical conversion and the optical transmission of the NMR signal, experiments were performed to overcome constraints related to the use of waveguide for electro-optical conversion by Pockels effect. Moreover, the importance of monitoring global and local SAR during MRI exams remains a need which is not limited only to the endoluminal coils. The second objective of the thesis is then the experimental validation of an electro-optical probe for real-time measurements of RF electric field. This probe can measure the RF electric field in air and in biological media at 3 T and 4.7 T MRI systems and allows the estimation of the local SAR

The Complementary Metal-Oxide-Semiconductor (CMOS) industry has seen tremendous developments over the past several decades and state-of-the-art fabrication technology has likewise been developed. This fabrication technology develops Photonic Integrate Circuits (PIC) which can guide, split, and modulate photonic waves within a small chip scale. On-chip optical phased arrayed waveguides that operate at high power overcome the current limitations of some conventional applications. This paper discusses two applications of on-chip optical waveguide systems: optical phased array (OPA)-based Light Detection and Range (LiDAR) and waveguide array Dielectric Laser Accelerator (DLA). Both the LiDAR and DLA structures require similar properties to achieve optimized performance. These properties are as follows: capability to handle high power, the ability to split the high power evenly through several waveguide branches and distribute the same degree of optical phase on each branch at specific spatial locations, efficient designs of active phase-tuning structures, and the ability to re-combine several waveguide branches into the sub-wavelength pitch spacing array without crosstalk. Additionally, both structures must resolve specific fabrication challenges on each waveguide component. To address these issues, this paper discusses the theoretical reviews of OPA, the Laser-Induced Damage Threshold (LIDT) of optical waveguide materials, and techniques to reduce crosstalk in sub-wavelength pitch size arrays, such as extreme skin-depth (e-skid) waveguides and propagation constant mismatched waveguides. We propose optimized designs for both OPA-based LiDAR and waveguide array DLA with passive and active devices, respectively, and explain the optimized parameters and its simulation results for each component from the full layout of devices. Furthermore, we discuss the fabrication process of the devices and show the resolutions of fabrication challenges, such as trapping void gaps in an e-skid array structure, writing errors of electron beam lithography of large dense patterns, and silicon nitride to silicon hybrid waveguide pattern alignments. Next, we show the experimental setups and the measurement results from the fabricated OPA devices and analyze the results. Finally, this paper concludes the research of the proposed devices and proposes more designs for both OPA-based LiDAR and waveguide arrayed DLA structures that can further increase increase its performance.<br>

This paper presents a brief study of the two most commonly used topologies - segmented and traveling-wave - for realizing monolithically integrated electro-optical transmitters consisting of Si-photonics Mach-Zehnder modulators and their electrical drivers. To this end, two new transmitters employing high swing breakdown voltage doubler drivers were designed in the aforementioned topologies and compared with regard to their extinction ratio and DC power consumption at the data rate of 30 Gb/s. It is shown that for the targeted data rate and extinction ratio, a considerably lower power consumption can be achieved with the traveling-wave topology than with its segmented counterpart. The transmitters were realized in a 250 nm SiGe BiCMOS electronic-photonic integrated technology.

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